CN106816540B - 一种有机发光显示面板及装置 - Google Patents
一种有机发光显示面板及装置 Download PDFInfo
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- CN106816540B CN106816540B CN201611236780.5A CN201611236780A CN106816540B CN 106816540 B CN106816540 B CN 106816540B CN 201611236780 A CN201611236780 A CN 201611236780A CN 106816540 B CN106816540 B CN 106816540B
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- Prior art keywords
- display panel
- emitting display
- organic light
- light emitting
- electrode
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- 238000002347 injection Methods 0.000 claims abstract description 72
- 239000007924 injection Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000011368 organic material Substances 0.000 claims abstract description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 48
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 claims description 24
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 7
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 125000004093 cyano group Chemical group *C#N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N triphenylene Chemical compound C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 21
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 150000002910 rare earth metals Chemical class 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- SKEDXQSRJSUMRP-UHFFFAOYSA-N lithium;quinolin-8-ol Chemical compound [Li].C1=CN=C2C(O)=CC=CC2=C1 SKEDXQSRJSUMRP-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- KDOKHBNNNHBVNJ-UHFFFAOYSA-N C1=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12.N1C=CC=CC=C1 Chemical class C1=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12.N1C=CC=CC=C1 KDOKHBNNNHBVNJ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611236780.5A CN106816540B (zh) | 2016-12-28 | 2016-12-28 | 一种有机发光显示面板及装置 |
| US15/616,941 US10497879B2 (en) | 2016-12-28 | 2017-06-08 | Organic light-emitting display panel device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611236780.5A CN106816540B (zh) | 2016-12-28 | 2016-12-28 | 一种有机发光显示面板及装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106816540A CN106816540A (zh) | 2017-06-09 |
| CN106816540B true CN106816540B (zh) | 2019-04-23 |
Family
ID=59110297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611236780.5A Active CN106816540B (zh) | 2016-12-28 | 2016-12-28 | 一种有机发光显示面板及装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10497879B2 (zh) |
| CN (1) | CN106816540B (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109427845B (zh) * | 2017-08-25 | 2021-02-09 | 京东方科技集团股份有限公司 | 显示面板及其制作方法、电致发光器件、显示装置 |
| KR102027523B1 (ko) * | 2017-12-22 | 2019-10-01 | 엘지디스플레이 주식회사 | 유기발광다이오드 및 이를 포함하는 유기발광 표시장치 |
| US11430969B2 (en) * | 2019-08-28 | 2022-08-30 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Electroluminescent component having metal layer disposed between two of optical coupling layers and display device having the same |
| KR102820733B1 (ko) * | 2020-08-21 | 2025-06-16 | 삼성디스플레이 주식회사 | 유기발광 다이오드 및 그 제조방법 |
| KR20220090667A (ko) * | 2020-12-22 | 2022-06-30 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함한 전자 장치 |
| CN113054124A (zh) * | 2021-02-20 | 2021-06-29 | 京东方科技集团股份有限公司 | 一种有机发光器件、显示装置、制作方法以及存储介质 |
| US20230200198A1 (en) * | 2021-12-20 | 2023-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and method for manufacturing the light-emitting element |
| JP2023179001A (ja) * | 2022-06-07 | 2023-12-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Citations (5)
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| CN1874024A (zh) * | 2005-05-31 | 2006-12-06 | 友达光电股份有限公司 | 有机发光二极管 |
| TW200803606A (en) * | 2006-06-13 | 2008-01-01 | Itc Inc Ltd | The fabrication of full color OLED panel using micro-cavity structure |
| KR20130134983A (ko) * | 2012-05-31 | 2013-12-10 | 주식회사 엘지화학 | 유기발광소자 및 이의 제조 방법 |
| CN105118924A (zh) * | 2015-07-29 | 2015-12-02 | 苏州大学 | 一种防短路的顶发射oled器件及其制备方法 |
| CN105514291A (zh) * | 2015-12-31 | 2016-04-20 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
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| WO2004013372A1 (ja) * | 2002-08-02 | 2004-02-12 | Idemitsu Kosan Co.,Ltd. | スパッタリングターゲット及び焼結体及びそれらを利用して製造した導電膜、並びに有機el素子及びそれに用いる基板 |
| KR100673744B1 (ko) * | 2004-10-28 | 2007-01-24 | 삼성에스디아이 주식회사 | 다층 구조 애노드 |
| KR100813850B1 (ko) * | 2007-03-29 | 2008-03-17 | 삼성에스디아이 주식회사 | 발광 장치 |
| KR100922759B1 (ko) * | 2008-02-26 | 2009-10-21 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 |
| KR20250018429A (ko) * | 2011-03-23 | 2025-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
| KR20250034194A (ko) * | 2011-04-07 | 2025-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
| US9299945B2 (en) * | 2011-12-14 | 2016-03-29 | Nitto Denko Corporation | Top-emitting white organic light-emitting diodes having improved efficiency and stability |
| TWI679790B (zh) * | 2012-08-03 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 發光元件 |
| US9966538B2 (en) * | 2012-11-07 | 2018-05-08 | Lms Co., Ltd. | Compound, light-emitting element and electronic device comprising same |
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| KR101620092B1 (ko) * | 2014-11-06 | 2016-05-13 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 그 제조방법 |
| CN104892578B (zh) * | 2015-05-19 | 2018-01-05 | 苏州大学 | 芴螺三苯胺衍生物及其用途 |
-
2016
- 2016-12-28 CN CN201611236780.5A patent/CN106816540B/zh active Active
-
2017
- 2017-06-08 US US15/616,941 patent/US10497879B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874024A (zh) * | 2005-05-31 | 2006-12-06 | 友达光电股份有限公司 | 有机发光二极管 |
| TW200803606A (en) * | 2006-06-13 | 2008-01-01 | Itc Inc Ltd | The fabrication of full color OLED panel using micro-cavity structure |
| KR20130134983A (ko) * | 2012-05-31 | 2013-12-10 | 주식회사 엘지화학 | 유기발광소자 및 이의 제조 방법 |
| CN105118924A (zh) * | 2015-07-29 | 2015-12-02 | 苏州大学 | 一种防短路的顶发射oled器件及其制备方法 |
| CN105514291A (zh) * | 2015-12-31 | 2016-04-20 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106816540A (zh) | 2017-06-09 |
| US10497879B2 (en) | 2019-12-03 |
| US20170309833A1 (en) | 2017-10-26 |
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