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CN106803744A - Micro-evaporator, oscillator integrated micro-evaporator structure and its frequency correction method - Google Patents

Micro-evaporator, oscillator integrated micro-evaporator structure and its frequency correction method Download PDF

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Publication number
CN106803744A
CN106803744A CN201510833446.7A CN201510833446A CN106803744A CN 106803744 A CN106803744 A CN 106803744A CN 201510833446 A CN201510833446 A CN 201510833446A CN 106803744 A CN106803744 A CN 106803744A
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China
Prior art keywords
micro
evaporator
evaporation
oscillator
anchor point
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Inventor
杨恒
游卫龙
张磊
王小飞
李昕欣
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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Application filed by Shanghai Institute of Microsystem and Information Technology of CAS filed Critical Shanghai Institute of Microsystem and Information Technology of CAS
Priority to CN201510833446.7A priority Critical patent/CN106803744A/en
Priority to US15/774,590 priority patent/US20180347029A1/en
Priority to PCT/CN2016/070284 priority patent/WO2017088288A1/en
Publication of CN106803744A publication Critical patent/CN106803744A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H03B1/02—Structural details of power oscillators, e.g. for heating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
    • H03H9/02401—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor by annealing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H10P14/2921—
    • H10P14/3238—
    • H10P14/3241—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • H10P14/22—
    • H10P14/3411—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Micromachines (AREA)

Abstract

The invention provides a micro-evaporator, an oscillator integrated micro-evaporator structure and a frequency correction method thereof, wherein the micro-evaporator comprises the following steps: the micro-evaporation platform, the anchor point, the supporting beam and the metal electrode; one surface of the micro-evaporation table is an evaporation surface; the anchor points are positioned on two sides of the micro-evaporation table and are separated from the micro-evaporation table by a certain distance; the supporting beam is positioned between the micro-evaporation table and the anchor point, one end of the supporting beam is connected with the micro-evaporation table, and the other end of the supporting beam is connected with the anchor point; the size of the supporting beam satisfies the following relational expression; the metal electrode is located on the first surface of the anchor point. The micro-evaporation table is connected with the anchor point of the metal electrode formed on the surface through the supporting beam, the size of the supporting beam is set through adjustment, so that the supporting beam has the characteristics of small heat capacity and less heat dissipation, the sizes of the micro-evaporation table and the supporting beam are small, the micro-evaporation table can reach the required evaporation temperature only by applying small power on the surface of the metal electrode, and meanwhile, due to the heat insulation effect of the supporting beam, the temperature rise of the anchor point is small, and the stability of a device cannot be influenced.

Description

Micro-evaporator, oscillator integrated micro-evaporator structure and frequency correction method thereof
Technical Field
The invention belongs to the technical field of sensing, and particularly relates to a micro-evaporator, an oscillator integrated micro-evaporator structure and a frequency correction method thereof.
Background
Oscillators are fundamental components in digital electronic systems that provide clock frequencies, which are used in almost all electronic systems. In modern communication systems, due to limited frequency resources and numerous users, a high requirement is placed on the accuracy of the oscillator frequency. GSM handsets require the frequency accuracy of the oscillator to be within ± 2.5ppm, while mobile base stations require the stability of the oscillator to be within ± 0.05 ppm.
Quartz crystal resonators have long been the primary component in electronic systems that provide clock frequency signals, and have stable performance and good temperature characteristics. However, the quartz oscillator is difficult to integrate, is limited by machining means, is difficult to manufacture a high-frequency oscillator, has poor anti-seismic performance, and is difficult to meet the requirements of future mobile intelligent equipment.
The silicon-based oscillator is a new-generation oscillator manufactured by adopting a Micro Electro Mechanical System (MEMS) technology, has excellent resonance characteristics, is convenient to integrate with an integrated circuit, can realize GHz-level oscillation frequency output, and can endure a high-impact environment.
One of the main problems that the oscillator must solve is that the dispersion of the MEMS process is significantly larger than the conventional mechanical processing technique, resulting in a large dispersion of the MEMS oscillator frequency. The processing precision of the traditional millimeter-scale quartz crystal oscillator can reach the micron-scale, the quartz crystal oscillator can work under the atmosphere, and the frequency is calibrated through processes such as testing, evaporation correction and the like after the processing is finished, so that the extremely high frequency accuracy can be realized. And the oscillator is manufactured by adopting a wafer level processing technology. The wafer level manufacturing process means that hundreds, thousands or even tens of thousands of chip units are arranged on a silicon wafer, each chip unit is an independent component, and all the chip units on the wafer are processed simultaneously. Any manufacturing process has process discreteness on a wafer, the discreteness of processes such as oxidation, diffusion and the like is small, and the discreteness of processes such as sputtering and the like is connectedNearly 5%, and the etch dispersion is greater. The characteristic size of the MEMS oscillator is in micron level, the process dispersion is generally in submicron level, and the frequency dispersion of the manufactured oscillator is obviously larger than that of the quartz crystal oscillator manufactured by the traditional process. By designing the resonant unit for manufacturability, the frequency dispersion of the oscillator can be reduced to the order of 102ppm, but there is still a great gap compared with the frequency dispersion of the quartz oscillator in the order of ppm. Target resonant frequency of the oscillator is f0F, wherein f0To meet the fixed frequency value required by the application, f is the frequency deviation allowed by the application. Allowed f/f in general applications0At 10-5～10-6Magnitude; the resonance frequency f of the silicon MEMS oscillator obtained by actual manufacturing has great discretenessiAnd f0The deviation of (d) is generally much larger than f.
In the traditional quartz oscillator, a thin metal layer is manufactured on the surface of a quartz resonant unit by using an evaporation or sputtering process, so that the mass of the resonant unit is changed to realize frequency adjustment. Because the oscillator generally needs to work in vacuum, the manufactured oscillator generally realizes vacuum packaging through a wafer level packaging process, and the traditional method is difficult to carry out structure fine adjustment on a resonant unit packaged in a vacuum cavity, so that the frequency calibration of the oscillator cannot be realized by adopting the traditional technology.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a micro-evaporator, an oscillator integrated micro-evaporator structure and a frequency correction method thereof, which are used for solving the problems that the frequency discreteness of an oscillator is high in the prior art, and the frequency calibration of the oscillator cannot be realized because the oscillator realizes vacuum packaging through a wafer level packaging process, and the structure fine adjustment of a resonant unit packaged in a vacuum cavity is difficult to realize.
To achieve the above and other related objects, the present invention provides a micro evaporator, comprising: the micro-evaporation platform, the anchor point, the supporting beam and the metal electrode; wherein,
one surface of the micro-evaporation table is an evaporation surface;
the anchor points are positioned on two sides of the micro-evaporation table and are separated from the micro-evaporation table by a certain distance;
the supporting beam is positioned between the micro-evaporation table and the anchor point, one end of the supporting beam is connected with the micro-evaporation table, and the other end of the supporting beam is connected with the anchor point; the dimension of the support beam satisfies the following relational expression:
b, h and L are respectively the width, thickness and length of the supporting beam, T is the evaporation temperature required by the micro-evaporation table during working, P is the power required to be applied to the metal electrode during working, k is the thermal conductivity of the supporting beam, and Ta is the temperature at the anchor point;
the metal electrode is located on the first surface of the anchor point.
As a preferable mode of the micro-evaporator of the present invention, the material of the micro-evaporation stage has a saturated vapor pressure of more than 10 below its melting point-6And (5) torr.
In a preferred embodiment of the micro-evaporator of the present invention, the materials of the micro-evaporation stage, the anchor point and the support beam are all homogeneous silicon or germanium.
As a preferable mode of the micro-evaporator of the present invention, the micro-evaporator further includes an evaporation material, and the evaporation material is located on an evaporation surface of the micro-evaporation stage.
As a preferred embodiment of the micro-evaporator of the present invention, the evaporation material has a saturated vapor pressure of more than 10-6The temperature of the torr is below the melting point of the micro-evaporation stage.
As a preferable mode of the micro-evaporator of the present invention, the evaporation material is aluminum, germanium, gold or a semiconductor material.
As a preferable mode of the micro evaporator of the present invention, the micro evaporator further includes a barrier layer, and the barrier layer is located between the evaporation material and the evaporation surface of the micro evaporation stage.
In a preferred embodiment of the micro-evaporator of the present invention, the material of the barrier layer is low-stress silicon nitride, silicon oxide or TiW/W composite metal.
As a preferable scheme of the micro-evaporator of the present invention, the micro-evaporator further includes an insulating layer and a substrate, the insulating layer is located on the second surface of the anchor point, and the anchor point is fixedly connected to the surface of the substrate through the insulating layer.
The invention also provides an oscillator integrated micro-evaporator structure, which comprises the micro-evaporator and the oscillator in any scheme;
the micro-evaporator and the oscillator are sealed in the same vacuum cavity together, the micro-evaporator and the oscillator are arranged in a vertically corresponding mode, and the evaporation surface of a micro-evaporation table in the micro-evaporator faces the oscillator.
As a preferable aspect of the oscillator-integrated micro-evaporator structure of the present invention, the evaporation surface of the micro-evaporator is spaced apart from the surface of the oscillator by a certain distance.
As a preferable aspect of the oscillator-integrated micro-evaporator structure of the present invention, the evaporation surface of the micro-evaporator is spaced from the surface of the oscillator by a distance of 2 μm to 50 μm.
As a preferable scheme of the oscillator integrated micro-evaporator structure, the micro-evaporator and the oscillator are integrated and sealed in the same vacuum cavity through a surface micro-machining process, a wafer level bonding process, a chip-to-wafer bonding process or a chip level bonding process.
The invention also provides a frequency correction method of the oscillator integrated micro-evaporator structure, which comprises the following steps:
1) measuring the resonance frequency of the oscillator, and comparing the measured resonance frequency with a target resonance frequency;
2) obtaining the evaporation quality required by the micro-evaporator according to the measured comparison result of the resonance frequency and the target resonance frequency;
3) applying voltage or current to the first metal electrodes at two ends of the micro-evaporator to evaporate the evaporation quality required by the micro-evaporator;
4) and removing the voltage or current applied to the first metal electrode, measuring the resonance frequency of the oscillator again, and comparing the measured resonance frequency with a target resonance frequency.
As a preferable embodiment of the method for correcting the frequency of the oscillator integrated micro-evaporator structure according to the present invention, after the step 4), the method further includes the step of repeating the steps 2) to 4) until the measured resonant frequency is the same as the target resonant frequency.
The micro-evaporator, oscillator integrated micro-evaporator structure and the frequency correction method thereof have the following beneficial effects: the micro-evaporation table is connected with an anchor point with a metal electrode formed on the surface through a support beam, the size of the support beam is adjusted and set, so that the support beam has the characteristics of small heat capacity and less heat dissipation, the sizes of the micro-evaporation table and the support beam are small, the micro-evaporation table can reach the required evaporation temperature only by applying small power on the surface of the metal electrode, and meanwhile, due to the heat insulation effect of the support beam, the temperature rise at the anchor point is small, and the stability of a device cannot be influenced; the oscillator and the micro-evaporator are integrated in the same vacuum cavity, so that the frequency of the oscillator is adjusted and corrected, the accuracy of the frequency of the oscillator can be improved, and the application requirement is met.
Drawings
Fig. 1 is a schematic perspective view illustrating a micro-evaporator according to an embodiment of the present invention.
Fig. 2 to 3 are schematic perspective views illustrating a micro-evaporator according to a second embodiment of the present invention.
Fig. 4 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a third embodiment of the present invention.
Fig. 5 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a fourth embodiment of the present invention.
Fig. 6 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a fifth embodiment of the present invention.
Fig. 7 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a sixth embodiment of the present invention.
Fig. 8 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a seventh embodiment of the present invention.
Fig. 9 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to an eighth embodiment of the present invention.
Fig. 10 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a ninth embodiment of the present invention.
Fig. 11 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to a tenth embodiment of the present invention.
Fig. 12 is a schematic cross-sectional view illustrating a structure of an oscillator integrated micro-evaporator according to a tenth embodiment of the present invention.
Fig. 13 is a schematic perspective view illustrating a structure of an oscillator integrated micro-evaporator according to an eleventh embodiment of the present invention.
Fig. 14 is a flowchart illustrating a frequency correction method for an oscillator integrated micro-evaporator structure according to a twelfth embodiment of the present invention.
Description of the element reference numerals
11 micro-evaporation table
12 first anchor point
121 first sub-anchor
122 second sub-anchor point
13 first support beam
14 first metal electrode
15 barrier layer
16 evaporation material
17 first insulating layer
21 resonant cell
211 first vibration beam
212 second vibration beam
22 second support beam
23 second anchor point
24 second metal electrode
25 second insulating layer
3 first substrate
41 third insulating layer
42 second substrate
51 first seal structure
511 first material layer
512 fourth insulating layer
52 second seal structure
521 second material layer
522 fifth insulating layer
53 first solder layer
54 second solder layer
61 connecting support
611 third solder layer
612 sixth insulating layer
62 third solder layer
63 fourth solder layer
64 rewiring layer
65 solder ball
66 first metal plug
67 second metal plug
7 seventh insulating layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 14. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the type, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1, the present invention provides a micro evaporator, which includes: the micro-evaporation table 11, the anchor points, the support beams and the metal electrodes; for the sake of easy distinction from other structures, the anchor point, the support beam and the metal electrode are defined as a first anchor point 12, a first support beam 13 and a first metal electrode 14, respectively;
one surface of the micro-evaporation table 11 is an evaporation surface; the first anchor points 12 are located on two sides of the micro-evaporation table 11 and are spaced from the micro-evaporation table 11 by a certain distance; the first supporting beam 13 is positioned between the micro-evaporation table 11 and the first anchor point 12, one end of the first supporting beam is connected with the micro-evaporation table 11, and the other end of the first supporting beam is connected with the first anchor point 12; the dimensions (i.e. length, width, height) of the first support beam 13 satisfy the following relation:b, h and L are respectively the width, thickness and length of the supporting beam, T is the evaporation temperature required by the micro-evaporation table during working, P is the power required to be applied to the metal electrode during working, k is the thermal conductivity of the supporting beam, and Ta is the temperature at the anchor point; the first metal electrode 14 is located on a first surface of the first anchor point 12.
The power of the micro evaporator in operation can be designed by designing the length, width and thickness of the first support beam 13. It should be noted that the dimensions of the first support beam 13 satisfy the relational expressionThe premise is as follows: the first support beam 13 is two uniform rectangular cross-section beams with equal length, width and thickness, assuming that the vacuum radiation heat dissipation is negligible and assuming that the temperature of the micro-evaporation table 11 is uniform. The exact power versus temperature relationship can be determined experimentally. The first support beam 13 is a core structure of the micro-evaporator, and mainly functions to heat by energization and reduce heat conduction. When first supporting beam 13 went up the electric current, because in actual design, width b, thickness h and length L of first supporting beam 13 are all smaller, the heat capacity of first supporting beam 13 is little and the heat dissipation is few, first supporting beam 13 is close to the temperature of little evaporation stage 11 one end can rise rapidly, makes the temperature of little evaporation stage 11 risees rapidly thereupon, and scatters and disappears the heat of first anchor point 12 department is few, first supporting beam 13 is close to the intensification of first anchor point 12 one end is few, can not cause the influence to the stability of device.
As an example, as shown in FIG. 1, the micro-evaporator is a self-evaporating micro-evaporator, and the material of the micro-evaporation stage 11 has a saturated vapor pressure of more than 10 below its melting point-6And (5) torr. The materials of the micro-evaporation table 11, the first anchor points 12 and the first support beams 13 may all be conductive materials, and the conductive materials may be semiconductor materials such as monocrystalline silicon, polycrystalline silicon or germanium, and may also be metal materials such as copper, which are commonly used in the packaging process; preferably, the materials of the micro-evaporation stage 11, the first anchor points 12 and the first support beams 13 are all monocrystalline silicon or polycrystalline silicon; more preferably, in this embodiment, the materials of the micro-evaporation stage 11, the first anchor point 12 and the first support beam 13 are heavily doped monocrystalline silicon, and the doping type may be P-type or N-type. Higher saturation vapor pressures can be achieved for silicon at temperatures below the melting point, e.g., 1410 ℃ for silicon and 10 for silicon-6The torr temperature was 1447 ℃ and the saturated vapor pressure was 10-4The temperature at torr was 1337 ℃. Silicon is used as the material of the micro-evaporation stage 11, and when in operation, a voltage or a current is applied to the first metal electrode 14, and the current passes through the first support beam 13 and the micro-evaporation stage 11The first support beam 13 and the micro-evaporation stage 11 are heated, and the micro-evaporation stage 11 is heated by controlling the heating current power so that the temperature of the micro-evaporation stage 11 reaches the temperature of the required saturated vapor pressure, thereby evaporating the micro-evaporation stage 11 itself.
As shown in fig. 1, the first support beam 13 is a double-end clamped beam, but the invention is not limited thereto, and the first support beam 13 may be in various forms such as a folded beam.
As an example, the material of the first electrode 14 may be, but is not limited to, aluminum.
As an example, the micro-evaporator further includes an insulating layer and a substrate, the insulating layer is located on the second surface of the first anchor point 12, and the first anchor point 12 is fixedly connected to the surface of the substrate through the insulating layer. For the sake of easy distinction from other structures to follow, the insulating layer and the substrate are defined herein as the first insulating layer 17 and the first substrate 3, respectively.
The first supporting beam 13 and the micro-evaporation stage 11 have small size and small heat capacity, and the micro-evaporator is packaged in vacuum, and the micro-evaporation stage 11 and one end of the first supporting beam 13 close to the micro-evaporation stage 11 can be heated to near 1000 ℃ or even above 1000 ℃ with only small power. Meanwhile, due to the heat insulation effect of the first support beam 13, the temperature rise of the first anchor point 12 is small and is significantly lower than the stable working temperature of the first metal electrode 14, and the stability of the device cannot be affected.
Example two
Referring to fig. 2 to 3, the present invention further provides a micro evaporator, the structure of which is substantially the same as that of the micro evaporator described in the first embodiment, and the micro evaporator in the first embodiment is different from the micro evaporator described in the first embodiment in that:
the micro-evaporator also comprises an evaporation material 16, and the evaporation material 16 is positioned on the evaporation surface of the micro-evaporation table 11.
As an example, the evaporation material 16 has a vapor pressure greater than 10 at saturation-6The temperature of the torr is lower than the melting point of the micro-evaporation stage 11, and the evaporation material 16 may be selected from a metal, a semiconductor or an insulating material, such as aluminum, germanium, gold, or a semiconductor material such as silicon, germanium, etc. When the micro-evaporator is used with an oscillator to modify the resonant frequency of the oscillator, the conditions to be met by the selection of the evaporation material 16 are as follows: 1) after evaporation, the coating can be deposited on the surface of the oscillator, and the bonding strength of the coating meets the application requirement; 2) the frequency of the oscillator is stable in a normal working environment, and the influence of the frequency on the long-term and short-term stability, the aging rate and the like of the oscillator meets the application requirement; 3) the evaporation temperature is in the temperature range where the first support beam 13 and the micro-evaporation stage 11 can stably work, and the saturated vapor pressure of the evaporation material 16 is far greater than that of the micro-evaporation stage 11 and the first support beam 13; 4) the evaporation rate meets the frequency correction requirement. For example, aluminum metal can be deposited on silicon material and can be stably operated for a long time, and the saturated vapor pressure reaches 10 when the temperature is 821 DEG C-6Torr, saturated vapor pressure reached 10 at 1010 deg.C-4And (5) torr. Due to the small size of the oscillator, 10 in some designs-6The saturated vapor pressure at torr is sufficient for frequency correction. The semiconductor germanium can also be deposited on silicon material, and the saturated vapor pressure reaches 10 when the temperature is 957 DEG C-6At torr, the saturated vapor pressure reaches 10 when the temperature is 1167 DEG C-4And (5) torr.
As an example, the micro-evaporator further comprises a barrier layer 15, the barrier layer 15 is located between the evaporation material 16 and the evaporation surface of the micro-evaporation table 11, that is, the barrier layer 15 is located on the evaporation surface of the micro-evaporation table 11, and the evaporation material 16 is located on the surface of the barrier layer 15. The barrier layer 15 serves to prevent the evaporation material 16 from interdiffusing or chemically reacting with the micro-evaporation stage 11 at the evaporation temperature, and also serves as an adhesion layer for the evaporation material 16.
For example, the barrier layer 15 may be made of an insulating material such as low-stress silicon nitride or silicon oxide, or may be made of a composite metal material such as TiW/W.
It should be noted that the barrier layer 15 may be omitted if the evaporation material 16 and the micro-evaporation stage 11 do not interdiffuse or chemically react at the evaporation temperature.
As an example, the evaporation material 16 may be located on the upper surface of the micro-evaporation stage 11 as shown in fig. 2, or may be located on the lower surface of the micro-evaporation stage 11 as shown in fig. 3.
EXAMPLE III
Referring to fig. 4, the present invention provides an oscillator integrated micro-evaporator structure, which includes the micro-evaporator and the oscillator according to the first embodiment;
the micro-evaporator and the oscillator are sealed in the same vacuum cavity together, the micro-evaporator and the oscillator are arranged in a vertically corresponding mode, and the evaporation surface of a micro-evaporation table 11 in the micro-evaporator faces the oscillator.
As an example, the oscillator may be a quartz oscillator, a silicon-based MEMS oscillator, or another oscillator, and the type and structure of the oscillator are not limited herein, that is, the oscillator may be any existing oscillator.
In this embodiment, taking a bending mode oscillator as an example, the oscillator includes a resonance unit 21, a second support beam 22, a second anchor point 23, and a second metal electrode 24; the resonance unit 21 is a mass block; the number of the second anchor points 23 is two, the second anchor points are respectively located at two sides of the resonance unit 21, and a certain distance is formed between the second anchor points and the resonance unit 21; the second support beam 22 is located between the resonance unit 21 and the second anchor point 23, one end of the second support beam is connected with the resonance unit 21, the other end of the second support beam is connected with the second anchor point 23, and the resonance unit 21 and the second support beam 22 jointly form a resonance structure; the second metal electrode 24 is located on a first surface of the second anchor point 23.
As an example, the material of the second electrode 24 may be, but is not limited to, aluminum.
As an example, the oscillator integrated micro-evaporator structure further includes a second insulating layer 25; the second insulating layer 25 is located on a second surface of the second anchor point 23, and the second anchor point 23 is fixedly connected to the front surface of the first substrate 3 through the second insulating layer 25. It should be noted that the first surface and the second surface of the second anchor point 23 are two opposite surfaces; the lower surfaces of the resonant unit 21 and the second support beam 22 are spaced from the upper surface of the first substrate 3 by a certain distance, which is the thickness of the first insulating layer 17.
As an example, the materials of the resonant unit 21, the second support beam 22, the second anchor point 23, the first anchor point 12, the first support beam 13, and the micro-evaporation stage 11 may be the same, and the same material layer may be etched by a surface micromachining process to be integrally formed.
As an example, the second support beam 22 is located below the first support beam 13, and they are perpendicular to each other; the micro-evaporation stage 11 is located right above the resonance unit 21 and is spaced from the resonance unit 21 by a certain distance, preferably, in this embodiment, the distance between the two is 2 μm to 50 μm.
As an example, the number of the micro-evaporation stations 11 (i.e., the number of the micro-evaporators) is the same as the number of the resonance units 21 (i.e., the number of the oscillators), and fig. 4 exemplifies that the number of the micro-evaporation stations 11 and the number of the resonance units 21 are both one.
As an example, in order to increase the degree of vacuum in the vacuum chamber, a getter may be fabricated in the vacuum chamber.
By integrating the oscillator and the micro-evaporator in the same vacuum chamber face to faceThe micro-evaporator is used for evaporating metal or semiconductor materials to be deposited on the surface of the resonant unit 21, the equivalent mass of the resonant unit 21 can be permanently changed, the adjustment and the correction of the frequency of the oscillator are realized, and the resonant frequency of the oscillator can be permanently corrected to the error range (10) allowed by the target resonant frequency-5～10-6Magnitude), the accuracy of the frequency of the oscillator can be improved, and the application requirement is met.
Example four
Referring to fig. 5, the present invention further provides an oscillator integrated micro-evaporator structure, which is substantially the same as the oscillator integrated micro-evaporator structure described in the third embodiment, and the difference between the structure and the structure is as follows: the micro-evaporator in the third embodiment is the self-evaporation micro-evaporator described in the first embodiment, while in this embodiment, the micro-evaporator is the micro-evaporator described in the second embodiment, that is, the evaporation surface of the micro-evaporation stage 11 of the micro-evaporator is provided with the barrier layer 15 and the evaporation material 16, and fig. 5 illustrates that the evaporation material 16 is located on the lower surface of the micro-evaporation stage 11, that is, the evaporation surface of the micro-evaporation stage 11 is the lower surface.
EXAMPLE five
Referring to fig. 6, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the third embodiment, and the difference between the structure of the oscillator integrated micro-evaporator structure and the structure of the oscillator integrated micro-evaporator structure is as follows: 1) in the third embodiment, the oscillator is a bending mode oscillator, and the resonant unit 21 is a mass block, whereas in the present embodiment, the oscillator is a stretching mode oscillator, the resonant unit 21 is a plate-shaped structure, and a side of the resonant unit 21 is vertically connected to the second support beam 22; 2) in the third embodiment, the second supporting beam 22 is perpendicular to the first supporting beam 13, and in the present embodiment, the second supporting beam 22 is parallel to the first supporting beam 13; 3) in the third embodiment, the number of the micro-evaporation tables 11 is the same as that of the resonance units 21, and each of the resonance units 21 is one, and in the present embodiment, the number of the resonance units 21 is one, the number of the micro-evaporation tables 11 is two, and the two micro-evaporation tables 11 are respectively located at two ends of the resonance units 21.
EXAMPLE six
Referring to fig. 7, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the fifth embodiment, and the difference between the structure of the oscillator integrated micro-evaporator structure and the structure of the oscillator integrated micro-evaporator structure is as follows: the micro-evaporator in the fifth embodiment is the self-evaporation micro-evaporator described in the first embodiment, while in this embodiment, the micro-evaporator is the micro-evaporator described in the second embodiment, that is, the evaporation surface of the micro-evaporation stage 11 of the micro-evaporator is provided with the barrier layer 15 and the evaporation material 16, and fig. 7 illustrates that the evaporation material 16 is located on the lower surface of the micro-evaporation stage 11, that is, the evaporation surface of the micro-evaporation stage 11 is the lower surface.
EXAMPLE seven
Referring to fig. 8, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the fifth embodiment, and the difference between the structure of the oscillator integrated micro-evaporator structure and the structure of the oscillator integrated micro-evaporator structure is as follows: in the fifth embodiment, the oscillator is an extension mode oscillator, the resonance unit 21 is a plate-shaped structure, and in this embodiment, the oscillator is an extension mode oscillator, the resonance unit 21 includes a first vibration beam 211 and a second vibration beam 212, the first vibration beam 211 is connected to the second support beam 22, the second vibration beam 212 is located at two ends of the first vibration beam 211, and the micro-evaporation stages 11 in the micro-evaporator are in one-to-one up-and-down correspondence with the second vibration beam 212.
As an example, the number of the first vibration beams 211 is two, and the two first vibration beams 211 are arranged in parallel; the second vibration beams 212 are positioned at two ends of the first vibration beam 211 and are vertically connected with the first vibration beam 211; one end of the second support beam 22 is vertically connected to the middle of the first vibration beam 211.
Example eight
Referring to fig. 9, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the seventh embodiment, and the difference between the structure of the oscillator integrated micro-evaporator structure and the structure of the oscillator integrated micro-evaporator structure is as follows: the micro-evaporator in the seventh embodiment is the self-evaporation micro-evaporator described in the first embodiment, while in this embodiment, the micro-evaporator is the micro-evaporator described in the second embodiment, that is, the evaporation surface of the micro-evaporation stage 11 of the micro-evaporator is provided with the barrier layer 15 and the evaporation material 16, and fig. 9 illustrates that the evaporation material 16 is located on the lower surface of the micro-evaporation stage 11, that is, the evaporation surface of the micro-evaporation stage 11 is the lower surface.
Example nine
Referring to fig. 10, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the seventh embodiment, and the difference between the structure and the structure is as follows: the first anchor point 12 in the seventh embodiment is a single structure, and the first anchor point 12 in this embodiment includes a first sub-anchor point 121 and a second sub-anchor point 122, the first metal electrode 14 and the second sub-anchor point 122 are located on a first surface of the first sub-anchor point 121, and a second surface of the first sub-anchor point 121 is a second surface of the first anchor point 12; the first support beam 13 is connected to the second sub-anchor point 122.
Example ten
Referring to fig. 11 and 12, the present invention further provides an oscillator integrated micro-evaporator structure, the structure of which is substantially the same as that of the oscillator integrated micro-evaporator structure described in the eighth embodiment, and the difference between the structure of which is: 1) in the eighth embodiment, only the first substrate 3 is included, and the oscillator and the micro-evaporator are integrated on the surface of the first substrate 3, and in this embodiment, the oscillator integrated micro-evaporator structure further includes a third insulating layer 41 and a second substrate 42; the third insulating layer 41 is located on a second surface of the second anchor point 23, and the second anchor point 23 is fixedly connected to the surface of the second substrate 42 through the third insulating layer 41; 2) in the eighth embodiment, the evaporation surface of the micro-evaporation stage 11 is the lower surface thereof, that is, the evaporation material 16 is located on the lower surface of the micro-evaporation stage 11, while in the present embodiment, the evaporation surface of the micro-evaporation stage 11 is the upper surface thereof, that is, the surface facing away from the first substrate 3, that is, the evaporation material 16 is located on the upper surface of the micro-evaporation stage 11, as shown in fig. 11 and 12. Compared with the fourth embodiment, the present embodiment further includes:
the oscillator integrated micro-evaporator structure further comprises a first sealing structure 51, a second sealing structure 52, a first solder layer 53 and a second solder layer 54; the first sealing structure 51 is positioned on the front side of the first substrate 3 and is positioned at the periphery of the micro evaporator; the second sealing structure 52 is located on the surface of the second substrate 42, is located at the periphery of the oscillator, and corresponds to the first sealing structure 51 up and down; the first solder layer 53 is located on the surface of the first sealing structure 51, the second solder layer 54 is located on the surface of the second sealing structure 52, and the first substrate 3 and the second substrate 42 are soldered together by the first solder layer 53 and the second solder layer 54 to form the vacuum cavity between the first substrate 3 and the second substrate 42.
The first sealing structure 51 includes a first material layer 511 and a fourth insulating layer 512; the first material layer 511 is fixedly connected to the front surface of the first substrate 3 through the fourth insulating layer 512, and the first solder layer 53 is located on the surface of the first material layer 511; the second sealing structure 52 includes a second material layer 521 and a fifth insulating layer 522; the second material layer 521 is fixedly connected to the surface of the second substrate 42 through the fifth insulating layer 522, and the second solder layer 54 is located on the surface of the second material layer 521.
The oscillator integrated micro-evaporator structure further includes a connection post 61, a third solder layer 62, a fourth solder layer 63, a re-wiring layer 64, a solder ball 65, a first metal plug 66, and a second metal plug 67; the connecting pillars 61 are located on the front surface of the first substrate 3 and correspond to the second metal electrodes 24 one by one up and down; the third solder layer 62 is located on the surface of the connecting support post 61, the fourth solder layer 63 is located on the surface of the second metal electrode 24, and the third solder layer 62 and the fourth solder layer 63 are soldered together; the re-wiring layer 64 is located on the back side of the first substrate; the solder balls 65 are located on the surface of the re-wiring layer 64; the first metal plug 66 penetrates the first substrate 3 and the connection pillar 61, and has one end connected to the third solder layer 62 and the other end connected to the redistribution layer 64; the second metal plug 67 penetrates through the first substrate 3, the first insulating layer 17 and the first anchor 12, one end of the second metal plug is connected to the first metal electrode 14, and the other end of the second metal plug is connected to the rewiring layer 64; that is, the second metal electrode 24 of the oscillator is electrically led out through the fourth solder layer 63, the third solder layer 62, the first metal plug 66, the redistribution layer 64 and the solder ball 65, and the first metal electrode 14 of the micro-evaporator is electrically led out through the second metal plug 67, the redistribution layer 64 and the solder ball 65. The first metal plug 66 and the second metal plug 67 may be formed together by the same process step, and both may be made of the same material, but not limited to, copper or aluminum.
The connection pillar 61 includes a third material layer 611 and a sixth insulating layer 612; the third material layer 611 is fixedly connected to the front surface of the first substrate 3 through the sixth insulating layer 612, and the third solder layer 62 is located on the surface of the third material layer 611.
As an example, the material of the first solder layer 53, the second solder layer 54, the third solder layer 62 and the fourth solder layer 63 may be, but is not limited to, aluminum germanium alloy.
The oscillator integrated micro-evaporator structure further includes a seventh insulating layer 7, the seventh insulating layer 7 being located between the first metal plug 66 and the first substrate 3 and the connection post 61, between the second metal plug 67 and the first substrate 3, the first insulating layer 17 and the first anchor 12, between the first substrate 3 and the rewiring layer 64, and on a surface of the rewiring layer 64 where the solder ball 65 is not formed.
As an example, the oscillator integrated micro-evaporator structure in this embodiment is processed by using two pieces of SOI silicon wafers, where the SOI silicon wafers sequentially include, from bottom to top, a silicon substrate, a buried oxide layer, and a top layer silicon; wherein the first substrate 3 and the second substrate 42 are both silicon substrates; the first insulating layer 17, the third insulating layer 41, the fourth insulating layer 512, the fifth insulating layer 522, and the sixth insulating layer 612 are all formed by processing the oxygen buried layer; the resonance unit 21, the second support beam 22, the second anchor point 23, the second material layer 521, the micro-evaporation stage 11, the first support beam 13, the first anchor point 12, the first material layer 511, and the third material layer 611 are all formed by processing the top silicon.
EXAMPLE eleven
Referring to fig. 13, the present invention further provides an oscillator integrated micro-evaporator structure, which has a structure substantially the same as that of the oscillator integrated micro-evaporator structure described in the tenth embodiment, and the difference between the structure and the structure is as follows: the micro-evaporator in example ten is the micro-evaporator described in example two, while in this example the micro-evaporator is a self-evaporating micro-evaporator described in example one.
Example twelve
Referring to fig. 14, the present invention further provides a frequency correction method of the oscillator integrated micro-evaporator structure according to any one of the above embodiments, the frequency correction method of the oscillator integrated micro-evaporator structure includes the following steps:
1) measuring the resonance frequency of the oscillator, and comparing the measured resonance frequency with a target resonance frequency;
2) obtaining the evaporation quality required by the micro-evaporator according to the measured comparison result of the resonance frequency and the target resonance frequency;
3) applying voltage or current to the first metal electrodes at two ends of the micro-evaporator to evaporate the evaporation quality required by the micro-evaporator;
4) and removing the voltage or current applied to the first metal electrode, measuring the resonance frequency of the oscillator again, and comparing the measured resonance frequency with a target resonance frequency.
Referring to step S1 in fig. 14, the resonant frequency of the oscillator is measured, and the measured resonant frequency is compared with a target resonant frequency.
As an example, the resonant frequency of the trace MEMS oscillator may be measured using existing metrology methods. In the above embodiments, the resonant units are generally complex elastomers, and include infinite resonant modes, but for any resonant mode i, the resonant characteristics approximately satisfy the equation
In the formula mieffIs the i modal equivalent mass, cieffIs the i-mode equivalent damping coefficient, kieffIs the i-mode equivalent coefficient of stiffness, and x is the amplitude of the resonant unit. The equivalent mass and the equivalent stiffness coefficient can be obtained by a mechanical calculation method such as a Rayleigh-Ritz method. The resonant frequency of the i-mode being
When equivalent mass mieffWhen increased, the resonant frequency f of the resonant celliWill drop. In order to ensure that the integrated micro-evaporator can effectively correct the resonance frequency of the resonance unit to reach the target value, the design should ensure that the resonance frequency of the resonance unit is slightly higher than the target value, and the resonance frequency of the resonance unit is corrected to the target value through the integrated micro-evaporator in the test stage after the integrated micro-evaporator is manufactured.
When the mass block described in the second embodiment is used as the resonance unit and the transverse first-order bending mode is used as the working mode of the resonance unit, the equivalent mass is approximately equal to the mass of the mass block, mieffThe equivalent coefficient of stiffness is approximately equal to the coefficient of stiffness of the two double-end fixed beams,wherein E is Young's modulus, h is beam thickness, b is beam width, and L is beam length.
The oscillator described in the third embodiment is an extended mode oscillator, and the mode equivalent mass isAn equivalent coefficient of stiffness ofρ is density, E is Young's modulus, and h is structure thickness.
Referring to step S2 in fig. 14, the evaporation quality required by the micro-evaporator is obtained according to the comparison result between the measured resonance frequency and the target resonance frequency.
As an example, the formula for calculating the evaporation mass required for correction is:
wherein m isieffIs the i-modal equivalent mass, fiIs the resonant frequency of the resonant cell, f0A fixed frequency value to meet the application requirements.
Referring to step S3 in fig. 14, a voltage or a current is applied to the first metal electrodes at both ends of the micro-evaporator to evaporate the evaporation quality required by the micro-evaporator.
As an example, a voltage is applied to two ends of the micro-evaporator, so that the temperature of the silicon material micro-evaporation table or the evaporation material on the surface of the micro-evaporation table of the micro-evaporator is raised to reach a set evaporation temperature, and at this time, the silicon material micro-evaporation table or the evaporation material is evaporated and deposited on the surface of the oscillator. Since the micro-evaporation stage is opposite to the resonance unit and the gap is in the order of micrometers, silicon atoms or evaporation materials are mainly deposited on the surface of the resonance unit.
Referring to step S4 in fig. 14, the voltage or current applied to the first metal electrode is removed, the resonant frequency of the oscillator is measured again, and the measured resonant frequency is compared with the target resonant frequency.
As an example, if the resonance frequency measured in step 4) is the same as the target resonance frequency, the correction is ended; if the resonance frequency measured in the step 4) is still deviated from the target resonance frequency, repeating the steps 2) to 4) until the measured resonance frequency is the same as the target resonance frequency.
In summary, the present invention provides a micro-evaporator, an oscillator integrated micro-evaporator structure and a frequency correction method thereof, wherein the micro-evaporator includes: one surface of the micro-evaporation table is an evaporation surface; the anchor points are positioned on two sides of the micro-evaporation table and are separated from the micro-evaporation table by a certain distance; the supporting beam is positioned between the micro-evaporation table and the anchor point, one end of the supporting beam is connected with the micro-evaporation table, and the other end of the supporting beam is connected with the anchor point; a metal electrode located on the first surface of the anchor point. The micro-evaporation table is connected with an anchor point with a metal electrode formed on the surface through a support beam, the size of the support beam is adjusted and set, so that the support beam has the characteristics of small heat capacity and less heat dissipation, the sizes of the micro-evaporation table and the support beam are small, the micro-evaporation table can reach the required evaporation temperature only by applying small power on the surface of the metal electrode, and meanwhile, due to the heat insulation effect of the support beam, the temperature rise at the anchor point is small, and the stability of a device cannot be influenced; the oscillator and the micro-evaporator are integrated in the same vacuum cavity, so that the frequency of the oscillator is adjusted and corrected, the accuracy of the frequency of the oscillator can be improved, and the application requirement is met.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (15)

1. A micro evaporator, comprising: the micro-evaporation platform, the anchor point, the supporting beam and the metal electrode;
wherein,
one surface of the micro-evaporation table is an evaporation surface;
the anchor points are positioned on two sides of the micro-evaporation table and are separated from the micro-evaporation table by a certain distance;
the supporting beam is positioned between the micro-evaporation table and the anchor point, one end of the supporting beam is connected with the micro-evaporation table, and the other end of the supporting beam is connected with the anchor point; the dimension of the support beam satisfies the following relational expression:
T = P L 2 k b h + T a
b, h and L are the width, thickness and length of the supporting beam respectively, T is the evaporation temperature required by the micro-evaporation table during working, P is the power required to be applied to the metal electrode during working, k is the thermal conductivity of the supporting beam, and T is the temperature of the metal electrode during workingaIs the temperature at the anchor point;
the metal electrode is located on the first surface of the anchor point.
2. The micro-evaporator of claim 1, wherein: the material of the micro-evaporation table has a saturated vapor pressure of more than 10 when the material is lower than the melting point of the material-6And (5) torr.
3. The micro-evaporator of claim 2, wherein: the materials of the micro-evaporation table, the anchor points and the support beams are all homogeneous silicon or germanium.
4. The micro-evaporator of claim 1, wherein: the micro-evaporator also comprises an evaporation material, and the evaporation material is positioned on the evaporation surface of the micro-evaporation table.
5. The micro evaporator of claim 4, wherein: the evaporation material has a saturated vapor pressure of more than 10-6The temperature of the torr is below the melting point of the micro-evaporation stage.
6. The micro-evaporator of claim 5, wherein: the evaporation material is aluminum, germanium, gold or a semiconductor material.
7. The micro-evaporator of claim 5, wherein: the micro-evaporator also comprises a barrier layer, and the barrier layer is positioned between the evaporation material and the evaporation surface of the micro-evaporation table.
8. The micro-evaporator of claim 7, wherein: the barrier layer is made of low-stress silicon nitride, silicon oxide or TiW/W composite metal.
9. The micro-evaporator of any one of claims 1 to 8, wherein: the micro-evaporator further comprises an insulating layer and a substrate, wherein the insulating layer is located on the second surface of the anchor point, and the anchor point is fixedly connected to the surface of the substrate through the insulating layer.
10. An oscillator integrated micro evaporator structure, characterized in that the oscillator integrated micro evaporator structure comprises a micro evaporator and an oscillator according to any one of claims 1 to 9;
the micro-evaporator and the oscillator are sealed in the same vacuum cavity together, the micro-evaporator and the oscillator are arranged in a vertically corresponding mode, and the evaporation surface of a micro-evaporation table in the micro-evaporator faces the oscillator.
11. The oscillator integrated micro evaporator structure of claim 10, wherein: the evaporation surface of the micro-evaporator is spaced from the surface of the oscillator by a certain distance.
12. The oscillator integrated micro evaporator structure of claim 11, wherein: the distance between the evaporation surface of the micro-evaporator and the surface of the oscillator is 2-50 μm.
13. The oscillator integrated micro evaporator structure of claim 10, wherein: the micro-evaporator and the oscillator are integrated and sealed in the same vacuum cavity through a surface micro-machining process, a wafer level bonding process, a chip-wafer bonding process or a chip level bonding process.
14. A frequency correction method for an oscillator integrated micro-evaporator structure according to any one of claims 10 to 13, comprising the steps of:
1) measuring the resonance frequency of the oscillator, and comparing the measured resonance frequency with a target resonance frequency;
2) obtaining the evaporation quality required by the micro-evaporator according to the measured comparison result of the resonance frequency and the target resonance frequency;
3) applying voltage or current to the first metal electrodes at two ends of the micro-evaporator to evaporate the evaporation quality required by the micro-evaporator;
4) and removing the voltage or current applied to the first metal electrode, measuring the resonance frequency of the oscillator again, and comparing the measured resonance frequency with a target resonance frequency.
15. The method for frequency correction of an oscillator integrated micro-evaporator structure of claim 14, wherein: after the step 4), repeating the steps 2) to 4) until the measured resonance frequency is the same as the target resonance frequency.
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