CN106785254B - Molybdenum disulfide thin film strip structure tunable terahertz wave filter - Google Patents
Molybdenum disulfide thin film strip structure tunable terahertz wave filter Download PDFInfo
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- CN106785254B CN106785254B CN201611206659.8A CN201611206659A CN106785254B CN 106785254 B CN106785254 B CN 106785254B CN 201611206659 A CN201611206659 A CN 201611206659A CN 106785254 B CN106785254 B CN 106785254B
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- molybdenum disulfide
- circular slot
- film
- rounded groove
- disulfide film
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 104
- 239000010409 thin film Substances 0.000 title claims 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000005864 Sulphur Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a kind of adjustable THz wave filters of molybdenum disulfide film ribbon structure.It includes basal layer, silicon dioxide layer, right end rectangle molybdenum disulfide film, strip molybdenum disulfide film, left end rectangle molybdenum disulfide film, first rounded groove, second rounded groove, third rounded groove, 4th rounded groove, 5th semicircle fluting, 6th semicircle fluting, 7th rounded groove, 8th rounded groove, 9th rounded groove, tenth rounded groove, signal input part, signal output end, by adjusting the bias direct current voltage being applied between molybdenum disulfide film layer and basal layer, adjust the effective dielectric constant of molybdenum disulfide film, realize the adjustable filter function of terahertz signal.The advantages that present invention has structure simple, and size is small, and response is fast, and control method is flexibly easily realized.
Description
Technical field
The present invention relates to THz wave filter more particularly to a kind of adjustable THz waves of molybdenum disulfide film ribbon structure
Filter.
Background technique
Terahertz (THz) wave refers to electromagnetic wave of the frequency between 0.1~10THz (30~3mm of wavelength), is located at electromagnetism
Between microwave and visible light wave in wave spectrum.Past, people were to this wave since the generation and detection of THz wave are more difficult
The characteristic of section is known little about it.In recent years, as gradually maturation, the Terahertz Technology of THz source and Detection Techniques achieve quickly
Development, show huge application value in fields such as communication, imaging, medicine, biology, chemistry.It is as Terahertz application
Important component in system, the function elements such as Terahertz modulator, isolator, Polarization Controller, sensor are essential.If
Meter processability is excellent, and Terahertz function element easy to use is a big hot spot of current Terahertz research field.
If Terahertz is used for communication aspects, we can get very high transmission rate, especially lead in satellite communication
Domain.This allows for Terahertz communication being capable of the high secrecy satellite communication of very wide bandwidth progress.Although due to efficient Terahertz
The shortage of emission source be commercialized it can't in the communications field must, but the realization of novel emitter and emission source will
Break this limitation.Terahertz filter is one of the critical function component of Terahertz communication and imaging system, Terahertz filtering
Deeply grinding for device ingeniously has far reaching significance to the application of Terahertz Science and Technology.The continuous depth studied with terahertz filter
Enter, the specific implementation structure of the terahertz filter based on molybdenum disulfide film proposed successively in recent years largely promotees
Into the research of the filter applied to terahertz wave band.
Summary of the invention
The present invention provides the molybdenum disulfide film that a kind of structure is simple, filtering performance is high to overcome the shortage of prior art
Ribbon structure is adjustable THz wave filter.
In order to achieve the above object, technical scheme is as follows:
Molybdenum disulfide film ribbon structure is adjustable, and THz wave filter includes basal layer, silicon dioxide layer, right end rectangle
Molybdenum disulfide film, strip molybdenum disulfide film, left end rectangle molybdenum disulfide film, the first rounded groove, the second rounded groove,
Third rounded groove, the 4th rounded groove, the 5th semicircle fluting, the 6th semicircle fluting, the 7th rounded groove, the 8th circle
Fluting, the 9th rounded groove, the tenth rounded groove, signal input part, signal output end；The upper layer of basal layer is silica
Layer, the upper layer of silicon dioxide layer is covered with right end rectangle molybdenum disulfide film, strip molybdenum disulfide film, left end rectangle molybdenum disulfide
Film, bar shaped molybdenum disulfide film are equipped with the first rounded groove, the second rounded groove, third rounded groove, the 4th circle and open
Slot, the 5th semicircle fluting, the 6th semicircle fluting, the 7th rounded groove, the 8th rounded groove, the 9th rounded groove, the tenth
Rounded groove, the first rounded groove, the second rounded groove, third rounded groove, the 4th rounded groove, the 5th semicircle fluting,
6th semicircle fluting, the 7th rounded groove, the 8th rounded groove, the 9th rounded groove, the tenth rounded groove are in two sulphur of bar shaped
Change sequence arrangement from left to right, the left end of right end rectangle molybdenum disulfide film and the right side of bar shaped molybdenum disulfide film in the middle part of molybdenum film
End is connected, and the left end of bar shaped molybdenum disulfide film is connected with the right end of left end rectangle molybdenum disulfide film, right end rectangle curing
The right end of molybdenum film is connected with the right end of silicon dioxide layer, the left end of left end rectangle molybdenum disulfide film and a left side for silicon dioxide layer
End is connected, and the left end of left end rectangle molybdenum disulfide film is equipped with signal input part, and the right end of right end rectangle molybdenum disulfide film is set
There is signal output end；Terahertz signal is inputted from signal input part, is exported from signal output end.Molybdenum disulfide film layer and substrate
The two poles of the earth of bias direct current voltage source are separately connected, the voltage for adjusting applied bias DC voltage source can change molybdenum disulfide film
Effective dielectric constant realizes tunable filter effect so as to control the transmission of THz wave.
The material of the basal layer is P-type silicon material, and length is 28~30 μm, and width is 10~12 μm, with a thickness of 2~
4μm.The length of the silicon dioxide layer is 28~30 μm, and width is 10~12 μm, with a thickness of 2~4 μm.The right end square
Shape molybdenum disulfide film is identical with the shape size of left end rectangle molybdenum disulfide film, and length is 8~10 μm, and width is 3~5
μm.The length of the bar shaped molybdenum disulfide film is 22~28 μm, and width is 4~6 μm.First rounded groove and the
The size of ten rounded grooves is identical, and radius is 3~4 μm.The size phase of second rounded groove and the 9th rounded groove
Together, radius is 2.5~3.5 μm.The third rounded groove is identical as the size of the 8th rounded groove, and radius is 2~3
μm.4th rounded groove is identical as the size of the 7th rounded groove, and radius is 1.5~2.5 μm.Described the 5th half
Rounded groove is identical as the size of the 6th semicircle fluting, and radius is 1~2 μm.
Detailed description of the invention:
Fig. 1 is the adjustable THz wave filter three dimensional structure diagram of molybdenum disulfide film ribbon structure；
Fig. 2 is the adjustable THz wave filter top view of molybdenum disulfide film ribbon structure；
Fig. 3 is the signal output end power output figure of the adjustable THz wave filter of molybdenum disulfide film ribbon structure.
Specific embodiment
As shown in Figures 1 to 3, the adjustable THz wave filter of molybdenum disulfide film ribbon structure includes basal layer 1, titanium dioxide
Silicon layer 2, right end rectangle molybdenum disulfide film 3, strip molybdenum disulfide film 4, left end rectangle molybdenum disulfide film 5, first are round
The 6, second rounded groove 7 of fluting, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th are opened
Slot 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15, signal input part
16, signal output end 17；The upper layer of basal layer 1 is silicon dioxide layer 2, and the upper layer of silicon dioxide layer 2 is covered with two sulphur of right end rectangle
Change molybdenum film 3, strip molybdenum disulfide film 4, left end rectangle molybdenum disulfide film 5, bar shaped molybdenum disulfide film 4 is equipped with first
Rounded groove 6, the second rounded groove 7, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th
Shape fluting the 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15, first is round
The 6, second rounded groove 7 of fluting, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th are opened
Slot 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15 are in bar shaped curing
Sequence arranges from left to right at molybdenum film 4 middle part, left end and the bar shaped molybdenum disulfide film 4 of right end rectangle molybdenum disulfide film 3
Right end is connected, and the left end of bar shaped molybdenum disulfide film 4 is connected with the right end of left end rectangle molybdenum disulfide film 5, right end rectangle two
The right end of vulcanization molybdenum film 3 is connected with the right end of silicon dioxide layer 2, the left end of left end rectangle molybdenum disulfide film 5 and titanium dioxide
The left end of silicon layer 2 is connected, and the left end of left end rectangle molybdenum disulfide film 5 is equipped with signal input part 16, right end rectangle molybdenum disulfide
The right end of film 3 is equipped with signal output end 17, and terahertz signal is inputted from signal input part 16, exports from signal output end 17,
It is equipped with one bias direct current voltage source between molybdenum disulfide film layer and substrate, adjusts the voltage of applied bias DC voltage source
The effective dielectric constant of molybdenum disulfide film can be changed, so as to control the transmission of THz wave, realize tunable filter effect
Fruit.
The material of the basal layer 1 is P-type silicon material, and length is 28~30 μm, and width is 10~12 μm, with a thickness of 2
~4 μm.The length of the silicon dioxide layer 2 is 28~30 μm, and width is 10~12 μm, with a thickness of 2~4 μm.The right side
End moment shape molybdenum disulfide film 3 is identical with the shape size of left end rectangle molybdenum disulfide film 5, and length is 8~10 μm, width
It is 3~5 μm.The length of the bar shaped molybdenum disulfide film 4 is 22~28 μm, and width is 4~6 μm.Described first is round
Fluting 6 is identical as the size of the tenth rounded groove 15, and radius is 3~4 μm.Second rounded groove 7 and the 9th is round
The size of fluting 14 is identical, and radius is 2.5~3.5 μm.The size of the third rounded groove 8 and the 8th rounded groove 13
Identical, radius is 2~3 μm.4th rounded groove 9 is identical as the size of the 7th rounded groove 12, and radius is 1.5
~2.5 μm.The semicircle fluting 10 of described the 5th is identical as the size of the 6th semicircle fluting 11, and radius is 1~2 μm.
Embodiment 1
Molybdenum disulfide film ribbon structure is adjustable THz wave filter:
As shown in Fig. 1~2, molybdenum disulfide film ribbon structure is adjustable, and THz wave filter includes basal layer 1, titanium dioxide
Silicon layer 2, right end rectangle molybdenum disulfide film 3, strip molybdenum disulfide film 4, left end rectangle molybdenum disulfide film 5, first are round
The 6, second rounded groove 7 of fluting, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th are opened
Slot 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15, signal input part
16, signal output end 17；The upper layer of basal layer 1 is silicon dioxide layer 2, and the upper layer of silicon dioxide layer 2 is covered with two sulphur of right end rectangle
Change molybdenum film 3, strip molybdenum disulfide film 4, left end rectangle molybdenum disulfide film 5, bar shaped molybdenum disulfide film 4 is equipped with first
Rounded groove 6, the second rounded groove 7, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th
Shape fluting the 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15, first is round
The 6, second rounded groove 7 of fluting, third rounded groove 8, the 10, the 6th semicircle of semicircle fluting of the 4th rounded groove the 9, the 5th are opened
Slot 11, the 7th rounded groove 12, the 8th rounded groove 13, the 9th rounded groove 14, the tenth rounded groove 15 are in bar shaped curing
Sequence arranges from left to right at molybdenum film 4 middle part, left end and the bar shaped molybdenum disulfide film 4 of right end rectangle molybdenum disulfide film 3
Right end is connected, and the left end of bar shaped molybdenum disulfide film 4 is connected with the right end of left end rectangle molybdenum disulfide film 5, right end rectangle two
The right end of vulcanization molybdenum film 3 is connected with the right end of silicon dioxide layer 2, the left end of left end rectangle molybdenum disulfide film 5 and titanium dioxide
The left end of silicon layer 2 is connected, and the left end of left end rectangle molybdenum disulfide film 5 is equipped with signal input part 16, right end rectangle molybdenum disulfide
The right end of film 3 is equipped with signal output end 17；Terahertz signal is inputted from signal input part 16, is exported from signal output end 17,
It is equipped with one bias direct current voltage source between molybdenum disulfide film layer and basal layer 1, adjusts applied bias DC voltage source
Voltage can change the effective dielectric constant of molybdenum disulfide film, so as to control the transmission of THz wave, realize adjustable filtering
Device effect.
The material of basal layer is P-type silicon material, and length is 28 μm, and width is 10 μm, with a thickness of 2 μm.Silicon dioxide layer
Length is 28 μm, and width is 10 μm, with a thickness of 2 μm.Right end rectangle molybdenum disulfide film and left end rectangle molybdenum disulfide film
Shape size is identical, and length is 8 μm, and width is 3 μm.The length of bar shaped molybdenum disulfide film is 22 μm, and maximum width is 4 μ
M is tightened with two sides left end rectangle molybdenum disulfide film and right end rectangle molybdenum disulfide film junction in gradual change.First is round
It slots identical as the size of the tenth rounded groove, radius is 3 μm.The size phase of second rounded groove and the 9th rounded groove
Together, radius is 2.5 μm.Third rounded groove is identical as the size of the 8th rounded groove, and radius is 2 μm.4th circle is opened
Slot is identical as the size of the 7th rounded groove, and radius is 1.5 μm.The size of 5th semicircle fluting and the 6th semicircle fluting
Identical, radius is 1 μm.The performance indexes of molybdenum disulfide film ribbon structure is adjustable THz wave filter uses
COMSOL Multiphysics software is tested, by adjust bias voltage, obtain it is as shown in Figure 3 for molybdenum disulfide it is thin
THz wave filter signal output end power output figure that film ribbon structure is adjustable, as seen from the figure, when applied voltage be 0.2eV,
When input THz wave is f=1.95THz, output power 90.5%；When applied voltage is 0.4eV, input THz wave is f
When=2.01THz, output power 91.8%；It is defeated when applied voltage is 0.6eV, and input THz wave is f=2.13THz
Power is 92.5% out.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611206659.8A CN106785254B (en) | 2016-12-23 | 2016-12-23 | Molybdenum disulfide thin film strip structure tunable terahertz wave filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611206659.8A CN106785254B (en) | 2016-12-23 | 2016-12-23 | Molybdenum disulfide thin film strip structure tunable terahertz wave filter |
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| Publication Number | Publication Date |
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| CN106785254A CN106785254A (en) | 2017-05-31 |
| CN106785254B true CN106785254B (en) | 2019-02-19 |
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| CN202034455U (en) * | 2011-03-22 | 2011-11-09 | 中国计量学院 | Silicon photon crystal terahertz wave filter with periodic cinquefoil hollowed-out structure |
| CN102903986B (en) * | 2012-10-09 | 2014-11-12 | 中国计量学院 | Trapezoidal tooth shaped terahertz wave filter |
| CN102931457B (en) * | 2012-11-12 | 2014-09-17 | 中国计量学院 | Round-hole straight-line TeraHertz wave filter |
| US9428985B2 (en) * | 2013-12-24 | 2016-08-30 | Baker Hughes Incorporated | Swellable downhole structures including carbon nitride materials, and methods of forming such structures |
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Address after: 313300 comprehensive building of Anji County Science and technology entrepreneurship Park, Sunshine Industrial Park, Dipu Town, Anji County, Huzhou City, Zhejiang Province Patentee after: China Jiliang University Address before: 310018, No. 258, Yuen Xue street, Jianggan Economic Development Zone, Zhejiang, Hangzhou Patentee before: China Jiliang University |
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Application publication date: 20170531 Assignee: Xinchang China Metrology University Enterprise Innovation Research Institute Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2021330000071 Denomination of invention: Tunable terahertz wave filter with molybdenum disulfide thin film strip structure Granted publication date: 20190219 License type: Common License Record date: 20210816 |
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