CN106684011B - Method for testing sheet resistance of ohmic contact area - Google Patents
Method for testing sheet resistance of ohmic contact area Download PDFInfo
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- CN106684011B CN106684011B CN201611241030.7A CN201611241030A CN106684011B CN 106684011 B CN106684011 B CN 106684011B CN 201611241030 A CN201611241030 A CN 201611241030A CN 106684011 B CN106684011 B CN 106684011B
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- 238000000034 method Methods 0.000 title claims description 20
- 238000012360 testing method Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 claims description 3
- 239000013590 bulk material Substances 0.000 claims description 2
- 239000008188 pellet Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010998 test method Methods 0.000 abstract description 4
- 238000003491 array Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of test methods of ohmic contact regions square resistance.Its implementation is: preparing the resolution chart for the Ohmic contact square resistance that two arrays of electrodes width is W, every kind of resolution chart includes three Ohmic electrodes, the first electrodes of two groups of resolution charts and the size of third electrode, first electrode is at a distance from second electrode and second electrode is all the same at a distance from third electrode, and the second electrode length of second group of resolution chart is α times of first group of resolution chart second electrode length；The resistance value in two groups of resolution charts between first electrode and third electrode is tested respectively；It is poor that the resistance value that the resistance value and resolution chart one surveyed to resolution chart two are surveyed is made, by result multiplied by W/ ((α -1) L12) item, obtain the square resistance of ohmic contact regions in every group of resolution chart.Resolution chart of the present invention is simply easy to manufacture, and test method is easy, as a result accurately and reliably, can be used for the production of high electron mobility heterojunction transistor.
Description
Technical field
The invention belongs to microelectronic field, the test method for the ohmic contact regions square resistance being related specifically to can be used for
The preparation of high electron mobility heterojunction transistor.
Background technique
Compared to the first generation semiconductor material using Si as representative and the second generation semiconductor material by representative of GaAs,
GaN material have forbidden bandwidth is big, breakdown electric field is high, high temperature resistant, erosion-resisting advantage, become the allusion quotation of third generation semiconductor material
Type represents.The heterostructure transistors especially formed with materials such as AlGaN, there are high concentrations, high electricity at heterojunction boundary
The two-dimensional electron gas of transport factor, thus have the advantages that operating current is big, operating rate is fast, have in high frequency, high power field
There are big advantage and broad application prospect.In recent years, related device has become international and domestic research hotspot, and part is
Through realizing commercial applications.
Ohmic electrode is usually the important component of device as the input/output terminal of semiconductor devices.Ohmic electrode
Quality directly affect the characteristics such as the frequency response of semiconductor devices, energy dissipation, junction temperature, output electric current, efficiency, gain, because
And become the emphasis of concern.By taking gallium nitride transistor as an example, the multiple layer metals such as Ti/Al/Ni/Au usually are deposited in ohmic area,
Then Ohmic contact is formed using the method for high-temperature thermal annealing.The temperature and time of annealing can seriously affect the good of Ohmic contact
It is bad.Ohmic contact resistance rate is to judge the important indicator of Ohmic contact quality.Therefore, select suitable method to Ohmic contact electricity
It is most important for the development and assessment of device that resistance rate carries out accurately characterization.
Currently, the measurement most common method of Ohmic contact square resistance is transmission-line modeling method TLM.This method is to pass through
The active area for designing one group of difference spacing extracts the resistance between the adjacent Ohmic electrode of different spacing, and then determines Ohmic contact
Square resistance.During extracting Ohmic contact square resistance, is calculated to simplify, often approximatively think Ohmic contact
The square resistance R in areashcWith the square resistance R of active areashIt is equal.In fact, the square resistance of active area be mainly derived from it is heterogeneous
Two-dimensional electron gas at knot, and ohmic contact regions square resistance is then that Metal deposition, high temperature are implemented on the basis of active area
The complicated technique such as annealing, therefore the square resistance of the two and unequal.Obviously, this approximate method can make Ohmic contact
The accuracy rate of square resistance is low, influences the performance of high electron mobility heterojunction transistor.
With the further development of semiconductor power device, the accurate characterization of ohmic contact regions square resistance opens technique
Hair, the raising of device performance and the assessment of reliability influence increasing.Therefore, ohmic contact regions square resistance is accurately characterized
It becomes more and more important.
Summary of the invention
It is an object of the invention in view of the above shortcomings of the prior art, propose a kind of test ohmic contact regions square resistance
Method, with improve measurement accuracy rate, and then improve electron mobility heterojunction transistor performance.
To achieve the above object, technical solution of the present invention includes the following steps:
(1) Ohmic contact resolution chart is prepared:
It first deposits metal electrode on semiconductor bulk material, then prepares two groups of width using the method for high annealing and be
The Ohmic contact square resistance resolution chart of W, every kind of resolution chart include three Ohmic electrodes；
Three Ohmic electrode length in first group of resolution chart are respectively L11、L12、L13, distance point between Ohmic electrode
It Wei not L1a, L1b；Three Ohmic electrode length in second group of resolution chart are respectively L21、L22、L23, between Ohmic electrode away from
From respectively L2a, L2b, wherein L21=L11, L22=α L12, L23=L13, L2a=L1a, L2b=L1b, α > 0, and α ≠ 1；
(2) measurement of square resistance:
(2a) applies bias voltage between the first electrode and third electrode of first group of resolution chart, and goes here and there in the loop
Join ammeter, reads the value of ammeter, the resistance value R between first electrode and third electrode is calculated using I-V relationshipL1:
RL1=V1/I1；
Wherein RL1For the resistance value in first group of resolution chart between first electrode and third electrode, V1For first group of test
First electrode and voltage added on third electrode, I in figure1For in first group of resolution chart by first electrode, second electrode,
The current value in circuit that third electrode and active area are constituted；
(2b) applies bias voltage between the first electrode and third electrode of second group of resolution chart, and goes here and there in the loop
Join ammeter, reads the value of ammeter, the resistance value R between first electrode and third electrode is calculated using I-V relationshipL2:
RL2=V2/I2；
Wherein RL2For the resistance value in second group of resolution chart between first electrode and third electrode, V2For second group of test
First electrode and voltage added on third electrode, I in figure2For in second group of resolution chart by first electrode, second electrode,
The current value in circuit that third electrode and active area are constituted；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, construct every group of resolution chart ohm and connect
Touch the square resistance calculation formula in area: Rshc=((RL2-RL1)W)/((α-1)L12)。
The invention has the following advantages over the prior art:
1) resolution chart production method is easy
Present invention only requires the resolution charts of two groups of different Ohmic contact square resistances of preparation, and resolution chart is simple, survey
Method for testing is quick and convenient.
2) square resistance test method is simple
The present invention only needs to carry out electrical measurement to two groups of different resolution charts, is passed through using measured resistance value simple
Mathematical computations, can be obtained the square resistance of ohmic contact regions.
3) accurate measurement can be realized to ohmic contact regions square resistance
Conventional transmission line model is when measuring ohmic contact regions square resistance, it is believed that ohmic contact regions square resistance RshcWith
Active area square resistance RshIt is approximately equal, that is, pass through RshObtain RshcValue, therefore there is very big error in measured value.This hair
The bright method by solving equation is eliminated containing RshItem, thus solve RshcDuring be not related to Rsh, can direct solution go out Rshc's
Value, improves the precision of measurement, high reliablity has great role to the performance and reliability of accurate evaluation gallium nitride device.
Detailed description of the invention
Fig. 1 is implementation flow chart of the invention；
Fig. 2 is existing resolution chart the schematic diagram of the section structure；
Fig. 3 is the top view structural schematic diagram for first group of resolution chart that the present invention constructs；
Fig. 4 is the top view structural schematic diagram for second group of resolution chart that the present invention constructs；
Fig. 5 is the circuit diagram of test resistance value in the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Embodiment
For illustrating the present invention, but it is not intended to limit the scope of the invention.
Referring to Fig.1, steps are as follows for realization of the invention:
Step 1, ohmic contact regions square resistance resolution chart is prepared.
Referring to Fig. 2, this step prepares the survey of ohmic contact regions square resistance according to the cross-section structure of existing resolution chart
Attempt shape, its step are as follows:
The structure of resolution chart 1a) is arranged: it is followed successively by substrate layer, nitride buffer layer and aluminum gallium nitride potential barrier from bottom to top
Layer；
1b) metal electrode is first deposited on aluminum gallium nitride barrier layer body material；
Identical technique 1c) is used on a piece of gallium nitride heteroepitaxial structure body material using the method for high annealing
The Ohmic contact resolution chart that two arrays of electrodes width is W is prepared respectively, in which:
First group of resolution chart is as shown in figure 3, its three Ohmic electrode length are respectively L11、L12、L13；Ohmic electrode
The distance between be respectively L1a、L1b；
Second group of resolution chart is as shown in figure 4, its three Ohmic electrode length are respectively L21、L22、L23；Ohmic electrode
The distance between be respectively L2a、L2b。
Wherein L22=α L12, α > 0 and α ≠ 1, L21=L11, L23=L13, L2a=L1a, L2b=L1b。
Step 2, the resistance value between the first electrode and third electrode of two kinds of figures is tested.
Referring to the resistance test schematic diagram of Fig. 5, this step is between the first electrode and third electrode of two kinds of resolution charts
Resistance value testing procedure it is as follows:
2a) apply bias voltage between the first electrode and third electrode of first group of resolution chart, and goes here and there in the loop
Join ammeter, reads the value of ammeter, the resistance value R between first electrode and third electrode is calculated using I-V relationshipL1:
RL1=V1/I1；
Wherein RL1For the resistance value between first group of resolution chart first electrode and third electrode, V1For first group of test chart
First electrode and voltage added on third electrode, I in shape1For in first group of resolution chart by first electrode, second electrode,
The current value in circuit that three electrodes and active area are constituted.
2b) apply bias voltage between the first electrode and third electrode of second group of resolution chart, and goes here and there in the loop
Join ammeter, reads the value of ammeter, the resistance value R between first electrode and third electrode is calculated using I-V relationshipL2:
RL2=V2/I2；
Wherein RL2For the resistance value between second group of resolution chart first electrode and third electrode, V2For second group of test chart
First electrode and voltage added on third electrode, I in shape2For in second group of resolution chart by first electrode, second electrode,
The current value in circuit that three electrodes and active area are constituted.
Step 3, every kind of resolution chart ohmic contact regions square resistance is calculated.
3a) according to Fig. 3, the resistance value in first group of resolution chart between first electrode and third electrode is indicated are as follows:
RL1=RA1+RA12+RA2+RA23+RA3,
Wherein, RA1For the resistance value of first electrode in first group of resolution chart, RA12For the first electricity in first group of resolution chart
The resistance value of active area, R between pole and second electrodeA2For the resistance value below second electrode in first group of resolution chart, RA23For
In first group of resolution chart between second electrode and third electrode active area resistance value, RA3For third in first group of resolution chart
The resistance value of electrode；
3b) according to Fig. 4, the resistance value in second group of resolution chart between first electrode and third electrode is indicated are as follows:
RL2=RB1+RB12+RB2+RB23+RB3,
Wherein, RB1For the resistance value of first electrode in second group of resolution chart, RB12For the first electricity in second group of resolution chart
The resistance value of active area, R between pole and second electrodeB2For the resistance value below second electrode in second group of resolution chart, RB23For
In second group of resolution chart between second electrode and third electrode active area resistance value, RB3For third in second group of resolution chart
The resistance value of electrode；
3c) calculate each section resistance value in two kinds of resolution charts:
3c1) determine the corresponding resistance of two kinds of resolution charts
Since two groups of resolution charts use identical preparation process on same pellet material, and in the first resolution chart
First electrode it is identical as the first electrode size in second of resolution chart, the third electrode in the first resolution chart and
Third electrode size in two kinds of resolution charts is identical, between the first electrode and second electrode in the first resolution chart away from
The second electricity from the distance between the first electrode and second electrode being equal in second of resolution chart, in the first resolution chart
The distance between pole and third electrode are equal to the distance between second electrode and third electrode in second of resolution chart, therefore
The corresponding resistance value of two kinds of resolution charts has following relationship:
RA1=RB1, RA3=RB3,
RA12=RB12, RA23=RB23,
3c2) define the resistance-type R calculated in first group of resolution chart below second electrodeA2In second group of resolution chart
Second electrode below resistance-type RB2:
RA2=(RshcL12)/W,
RB2=(RshcαL12)/W,
Wherein, RshcIt is the square resistance of ohmic contact regions in resolution chart, W is the electrode width in every group of resolution chart,
α is known constant, α > 0 and α ≠ 1, L12For the length of second electrode in first group of resolution chart；
3d) by the R in step 3c2)A2Substitute into step 3a) in resistance expression formula, obtain first in first group of resolution chart
Resistance value expression R between electrode and third electrodeL1:
RL1=RA1+RA12+(RshcL12)/W+RA23+RA3,
3e) by the R in step 3c2)B2Substitute into step 3b) in resistance expression formula, obtain first in second group of resolution chart
Resistance value expression R between electrode and third electrodeL2:
RL2=RB1+RB12+(RshcαL12)/W+RB23+RB3,
Work 3f) with step 3e) and step 3d) expression formula is poor, obtains equation: RL2-RL1=(Rshc(α-1)L12)/W,
3g) by the equation of step 3f), export calculates the formula of the ohmic contact regions square resistance in every group of resolution chart
Are as follows:
Rshc=((RL2-RL1)W)/((α-1)L12),
3h) by the R in step 2a)L1Measured value and step 2b) in RL2Measured value substitute into step 3g) in calculating
R is obtained in formulashcValue are as follows:
Rshc=((V2/I2-V1/I1)W)/((α-1)L12)。
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is clear that for this field
Professional for, after understanding the contents of the present invention and principle, can modify within the spirit and principles in the present invention,
Equivalent replacement and improvement etc., for example, resolution chart of the present invention can also be different using GaAs etc. based on GaN material
Ohmic contact square resistance resolution chart in the semi-conducting material manufacturing present invention.Made modifications, equivalent substitutions and improvements are equal
It should be included within protection scope of the present invention.
Claims (2)
1. a kind of method for testing ohmic contact regions square resistance, includes the following steps:
(1) Ohmic contact resolution chart is prepared:
Metal electrode is first deposited on semiconductor bulk material, then it is W's that the method for using high annealing, which prepares two groups of width,
Ohmic contact square resistance resolution chart, every kind of resolution chart include three Ohmic electrodes；
Three Ohmic electrode length in first group of resolution chart are respectively L11、L12、L13, distance is respectively between Ohmic electrode
L1a, L1b；Three Ohmic electrode length in second group of resolution chart are respectively L21、L22、L23, the distance between Ohmic electrode point
It Wei not L2a, L2b, wherein L21=L11, L22=α L12, L23=L13, L2a=L1a, L2b=L1b, α > 0, and α ≠ 1；
(2) measurement of square resistance:
(2a) applies bias voltage between the first electrode and third electrode of first group of resolution chart, and series electrical in the loop
Flow table reads the value of ammeter, and the resistance value R between first electrode and third electrode is calculated using I-V relationshipL1:
RL1=V1/I1；
Wherein RL1For the resistance value in first group of resolution chart between first electrode and third electrode, V1For first group of resolution chart
Added voltage, I in middle first electrode and third electrode1For in first group of resolution chart by first electrode, second electrode, third
The current value in circuit that electrode and active area are constituted；
(2b) applies bias voltage between the first electrode and third electrode of second group of resolution chart, and series electrical in the loop
Flow table reads the value of ammeter, and the resistance value R between first electrode and third electrode is calculated using I-V relationshipL2:
RL2=V2/I2；
Wherein RL2For the resistance value in second group of resolution chart between first electrode and third electrode, V2For second group of resolution chart
Added voltage, I in middle first electrode and third electrode2For in second group of resolution chart by first electrode, second electrode, third
The current value in circuit that electrode and active area are constituted；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, construct every group of resolution chart ohmic contact regions
Square resistance calculation formula: Rshc=((RL2-RL1)W)/((α-1)L12)。
2. according to the method described in claim 1, wherein constructing the square of every group of resolution chart ohmic contact regions in step (2c)
Resistance calculations formula carries out as follows:
(2c1) indicates the resistance value in first group of resolution chart between first electrode and third electrode are as follows:
RL1=RA1+RA12+RA2+RA23+RA3,
Wherein, RA1For the resistance value of first electrode in first group of resolution chart, RA12For first electrode in first group of resolution chart with
The resistance value of active area, R between second electrodeA2For the resistance value of second electrode in first group of resolution chart, RA23For first group of survey
Attempt the resistance value of active area between second electrode and third electrode in shape, RA3For the electricity of third electrode in first group of resolution chart
Resistance value,
(2c2) indicates the resistance value in second group of resolution chart between first electrode and third electrode are as follows:
RL2=RB1+RB12+RB2+RB23+RB3,
Wherein, RB1For the resistance value of first electrode in second group of resolution chart, RB12For first electrode in second group of resolution chart with
Active area resistance value between second electrode, RB2For the resistance value of second electrode in second group of resolution chart, RB23For second group of test
In figure between second electrode and third electrode active area resistance, RB3For the resistance of third electrode in second group of resolution chart
Value；
(2c3) uses identical preparation process and two kinds of resolution charts first according to two groups of resolution charts on same pellet material
Electrode is identical as third electrode size and the first electrode of two groups of resolution charts is identical as the distance between second electrode, second
Electrode is identical as the distance between third electrode, obtains the following relationship of each section resistance value in two kinds of resolution charts:
RA1=RB1, RA12=RB12, RA23=RB23, RA3=RB3,
(2c4) defines the resistance-type R calculated below first group of resolution chart second electrodeA2With second group of resolution chart second electrode
The resistance-type R of lower sectionB2:
RA2=(RshcL12)/W,
RB2=(RshcαL12)/ W,
Wherein, RshcIt is the square resistance of ohmic contact regions in resolution chart, W is the electrode width in every group of resolution chart, and α is
Known constant, α > 0 and α ≠ 1, L12For the length of second electrode in first group of resolution chart；
(2c5) is by RA2The resistance expression formula in step (2c1) is substituted into, first electrode and third electricity in first group of resolution chart are obtained
Resistance value expression R between poleL1:
RL1=RA1+RA12+(RshcL12)/W+RA23+RA3,
(2c6) is by RB2The resistance expression formula in step (2c2) is substituted into, first electrode and third electricity in second group of resolution chart are obtained
Resistance value expression R between poleL2:
RL2=RB1+RB12+(RshcαL12)/W+RB23+RB3,
(2c7) is poor with the work of step (2c6) and step (2c5) expression formula, obtains equation: RL2-RL1=(Rshc(α-1)L12)/W,
(2c8) exports the ohmic contact regions square resistance calculated in every group of resolution chart by the equation of step (2c7):
Rshc=((RL2-RL1)W)/((α-1)L12)。
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| CN107248496B (en) * | 2017-06-07 | 2019-11-15 | 西安电子科技大学 | Correction method of sheet resistance in ohmic contact area |
| CN107871792B (en) * | 2017-12-12 | 2023-11-17 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic cell and corresponding method for measuring screen printing plate, sheet resistance and/or contact resistivity |
| CN108170910B (en) * | 2017-12-15 | 2023-07-11 | 大连理工大学 | A Method for Extracting Ohmic Contact Resistance Parameters of Semiconductor Electrodes |
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| JP2000068340A (en) * | 1998-08-24 | 2000-03-03 | Mitsubishi Electric Corp | Test pattern |
| KR20100013938A (en) * | 2008-08-01 | 2010-02-10 | 주식회사 하이닉스반도체 | A test pattern of a semiconductor device and a method for testing the same |
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| US7719005B2 (en) * | 2007-02-07 | 2010-05-18 | International Buriness Machines Corporation | Structure and method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process |
| JP5321805B2 (en) * | 2008-02-14 | 2013-10-23 | セイコーエプソン株式会社 | Method for manufacturing actuator device, method for manufacturing liquid jet head, liquid jet head, and liquid jet device |
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|---|---|---|---|---|
| JP2000068340A (en) * | 1998-08-24 | 2000-03-03 | Mitsubishi Electric Corp | Test pattern |
| KR20100013938A (en) * | 2008-08-01 | 2010-02-10 | 주식회사 하이닉스반도체 | A test pattern of a semiconductor device and a method for testing the same |
| CN102200552A (en) * | 2010-11-17 | 2011-09-28 | 浙江正泰太阳能科技有限公司 | Method and equipment for testing square resistor of silicon sheet |
| CN103137603A (en) * | 2011-11-23 | 2013-06-05 | 上海华虹Nec电子有限公司 | Test structure and method for monitoring light dope injection stability under side walls of polycrystalline silicon |
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