CN106647166A - Crystal direction alignment device and alignment method of nanometer impressing template - Google Patents
Crystal direction alignment device and alignment method of nanometer impressing template Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
本发明涉及一种纳米压印模版晶向对准装置,它的晶圆台顶面开设有开口向上的晶圆安装凹槽,模版吸附夹具的底面开设有开口向下的压印模版凹槽,第二电极图形板安装在晶圆台顶面,第一电极图形板安装在模版吸附夹具的底面,第一电极图形板与第二电极图形板内的电极图形为互补电极图形,第一电极图形板的正负极与电阻计对应的正负极相连,模版吸附夹具安装在微调台上,微调台用于对模版吸附夹具的位置进行调整,吸附控制系统用于控制模版吸附夹具的吸附端对压印模版的吸附,所述晶圆的晶向与第二电极图形板平行,压印模版中的模版图形方向与第一电极图形板平行。本发明结构简单,精度高。
The invention relates to a device for aligning the crystal direction of a nano-imprint template. The top surface of the wafer table is provided with a wafer mounting groove with an upward opening, and the bottom surface of the template adsorption fixture is provided with an imprint template groove with an opening downward. The two-electrode pattern board is installed on the top surface of the wafer table, the first electrode pattern plate is installed on the bottom surface of the template adsorption fixture, the electrode patterns in the first electrode pattern plate and the second electrode pattern plate are complementary electrode patterns, and the first electrode pattern plate The positive and negative poles are connected to the corresponding positive and negative poles of the resistance meter. The template adsorption fixture is installed on the fine-tuning table, which is used to adjust the position of the template adsorption fixture. The adsorption control system is used to control the adsorption end of the template adsorption fixture to the imprint For the adsorption of the template, the crystal direction of the wafer is parallel to the second electrode pattern plate, and the direction of the template pattern in the embossed template is parallel to the first electrode pattern plate. The invention has simple structure and high precision.
Description
技术领域technical field
本发明涉及微细加工、半导体工艺设备技术领域,具体涉及一种纳米压印模版晶向对准装置及对准方法。The invention relates to the technical fields of microfabrication and semiconductor process equipment, in particular to a nanoimprint template crystal orientation alignment device and alignment method.
背景技术Background technique
纳米压印技术的工艺精度和工艺面积只与模版的图形定义有关,具有成本低,产量高的优点。在制作某些半导体器件时,如半导体激光器的光栅时,需要压印的图形与半导体晶圆的晶向对准。传统的纳米压印设备或者没有该设备,或者需要非常昂贵的微调设备,不适合大规模生产,需要开发一种低成本的纳米压印模版晶向对准方法,提高对准速度。The process accuracy and process area of nanoimprint technology are only related to the graphic definition of the template, and have the advantages of low cost and high output. When making some semiconductor devices, such as gratings of semiconductor lasers, it is necessary to align the embossed pattern with the crystal direction of the semiconductor wafer. Traditional nanoimprint equipment either does not have this equipment, or requires very expensive fine-tuning equipment, which is not suitable for mass production. It is necessary to develop a low-cost nanoimprint template crystal orientation alignment method to increase the alignment speed.
发明内容Contents of the invention
本发明的目的在于提供一种结构简单,精度高的纳米压印模版晶向对准装置及对准方法。The object of the present invention is to provide a nanoimprint template crystal orientation alignment device and alignment method with simple structure and high precision.
为解决上述技术问题,本发明公开的一种纳米压印模版晶向对准装置,其特征在于:它包括晶圆台、模版吸附夹具、微调台、电阻计、吸附控制系统、第一电极图形板、晶圆、与第一电极图形板对应的第二电极图形板、与晶圆匹配的压印模版,所述晶圆台顶面开设有开口向上的晶圆安装凹槽,模版吸附夹具的底面开设有开口向下的压印模版凹槽,模版吸附夹具的吸附端位于压印模版凹槽槽底,所述压印模版凹槽位于晶圆安装凹槽的上方,所述第二电极图形板安装在晶圆台顶面,第一电极图形板安装在模版吸附夹具的底面,所述第一电极图形板位于第二电极图形板的上方,所述第一电极图形板与第二电极图形板内的电极图形为互补电极图形,所述第一电极图形板的正负极与电阻计对应的正负极相连,所述模版吸附夹具安装在微调台上,微调台用于对模版吸附夹具的位置进行调整,所述吸附控制系统的控制端连接模版吸附夹具的吸附控制端,吸附控制系统用于控制模版吸附夹具的吸附端对压印模版的吸附,所述晶圆的晶向与第二电极图形板平行,所述压印模版中的模版图形方向与第一电极图形板平行。In order to solve the above-mentioned technical problems, the present invention discloses a nanoimprint template crystal orientation alignment device, which is characterized in that it includes a wafer table, a template adsorption fixture, a fine-tuning table, a resistance meter, an adsorption control system, and a first electrode graphic board , a wafer, a second electrode pattern plate corresponding to the first electrode pattern plate, and an embossing template matching the wafer, the top surface of the wafer table is provided with a wafer mounting groove with an opening upward, and the bottom surface of the template adsorption fixture is provided with There is an embossing template groove with an opening downward, the adsorption end of the template adsorption jig is located at the bottom of the embossing template groove, the embossing template groove is located above the wafer installation groove, and the second electrode graphic board is installed On the top surface of the wafer table, the first electrode pattern plate is installed on the bottom surface of the template adsorption fixture, the first electrode pattern plate is located above the second electrode pattern plate, and the first electrode pattern plate and the second electrode pattern plate The electrode pattern is a complementary electrode pattern, the positive and negative poles of the first electrode pattern plate are connected to the positive and negative poles corresponding to the resistance meter, the template adsorption fixture is installed on the fine-tuning table, and the fine-tuning table is used to adjust the position of the template adsorption fixture. Adjustment, the control end of the adsorption control system is connected to the adsorption control end of the template adsorption fixture, the adsorption control system is used to control the adsorption of the imprint template by the adsorption end of the template adsorption fixture, the crystal orientation of the wafer and the second electrode pattern The plates are parallel, and the direction of the template pattern in the embossed template is parallel to the first electrode pattern plate.
一种利用上述装置进行纳米压印模版晶向对准的方法,它包括如下步骤:A method for aligning the crystal direction of a nanoimprint template using the above-mentioned device, comprising the steps of:
步骤1:控制吸附控制系统使模版吸附夹具的吸附端对压印模版进行吸附;Step 1: Control the adsorption control system to make the adsorption end of the template adsorption fixture adsorb the imprint template;
步骤2:使用微调台调整模版吸附夹具的位置,同时观察第一电极图形板和第二电极图形板的位置,使第二电极图形板的左边缘和右边缘分别与第一电极图形板的左侧正方形电极图形的左侧边缘及右侧正方形电极图形的右侧边缘对齐贴合;Step 2: Use the fine-tuning table to adjust the position of the stencil adsorption fixture, and observe the positions of the first electrode graphic board and the second electrode graphic board at the same time, so that the left edge and right edge of the second electrode graphic board are respectively in line with the left edge of the first electrode graphic board. The left edge of the side square electrode pattern and the right edge of the right square electrode pattern are aligned and pasted;
步骤3:继续通过微调台调整模版吸附夹具的位置,当电阻计得到最低的测量电阻时,关闭吸附控制系统,使压印模版紧贴在晶圆上,完成对准工作。Step 3: Continue to adjust the position of the stencil adsorption fixture through the fine-tuning table. When the resistance meter obtains the lowest measured resistance, turn off the adsorption control system, so that the imprint template is closely attached to the wafer, and the alignment work is completed.
本发明利用电极图形作为晶圆和压印模版相对角度的参考,通过测试电极接触的电阻判断晶向的对准程度,不需要视觉识别系统,具有结构简单,操作方便,纳米压印模版晶向对准的精度高的效果。The invention uses the electrode pattern as a reference for the relative angle between the wafer and the embossing template, and judges the alignment degree of the crystal direction by testing the resistance of the electrode contact, without the need for a visual recognition system, and has simple structure, convenient operation, and nano-imprinting template crystal orientation The effect of high precision alignment.
附图说明Description of drawings
图1为本发明的结构示意图;Fig. 1 is a structural representation of the present invention;
图2为将晶圆放置在晶圆台中的俯视结构示意图;FIG. 2 is a schematic diagram of a top view structure of placing a wafer in a wafer table;
图3为将压印模版吸附在模版吸附夹具中的俯视结构示意图;Fig. 3 is a top view structural diagram of adsorbing the imprint template in the template adsorption fixture;
图4为第一电极图形板与第二电极图形板对齐时的位置示意图。FIG. 4 is a schematic diagram of the positions of the first electrode pattern board and the second electrode pattern plate when they are aligned.
其中,1—晶圆台、1.1—晶圆安装凹槽、2—模版吸附夹具、2.1—吸附端、2.2—压印模版凹槽、3—微调台、4—电阻计、5—吸附控制系统、6—观察系统、7—第一电极图形板、8—第二电极图形板、9—晶圆、10—压印模版、11—晶向、12—模版图形。Among them, 1—wafer table, 1.1—wafer installation groove, 2—stencil adsorption fixture, 2.1—adsorption end, 2.2—imprint template groove, 3—fine-tuning table, 4—resistance meter, 5—adsorption control system, 6—observation system, 7—first electrode pattern plate, 8—second electrode pattern plate, 9—wafer, 10—imprint template, 11—crystal orientation, 12—template pattern.
具体实施方式detailed description
以下结合附图和具体实施例对本发明作进一步的详细说明:Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
本发明所设计的纳米压印模版晶向对准装置,如图1~4所示,它包括晶圆台1、模版吸附夹具2、微调台3、电阻计4、吸附控制系统5、第一电极图形板7、晶圆9、与第一电极图形板7对应的第二电极图形板8、与晶圆9匹配的压印模版10,所述晶圆台1顶面开设有开口向上的晶圆安装凹槽1.1,模版吸附夹具2的底面开设有开口向下的压印模版凹槽2.2,模版吸附夹具2的吸附端2.1位于压印模版凹槽2.2槽底,所述压印模版凹槽2.2位于晶圆安装凹槽1.1的上方,所述第二电极图形板8安装在晶圆台1顶面,第一电极图形板7安装在模版吸附夹具2的底面,所述第一电极图形板7位于第二电极图形板8的上方,所述第一电极图形板7与第二电极图形板8内的电极图形为互补电极图形,所述第一电极图形板7的正负极与电阻计4对应的正负极相连,所述模版吸附夹具2安装在微调台3上,微调台3用于对模版吸附夹具2的位置进行调整,所述吸附控制系统5的控制端连接模版吸附夹具2的吸附控制端,吸附控制系统5用于控制模版吸附夹具2的吸附端2.1对压印模版10的吸附,所述晶圆9的晶向11与第二电极图形板8平行,所述压印模版10中的模版图形12方向与第一电极图形板7平行。The nanoimprint template crystal direction alignment device designed by the present invention, as shown in Figures 1 to 4, includes a wafer table 1, a template adsorption fixture 2, a fine-tuning table 3, a resistance meter 4, an adsorption control system 5, and a first electrode Graphics board 7, wafer 9, second electrode graphics board 8 corresponding to the first electrode graphics board 7, embossing template 10 matching the wafer 9, the top surface of the wafer table 1 is provided with an opening upward wafer installation Groove 1.1, the bottom surface of the template adsorption fixture 2 is provided with an embossed template groove 2.2 with an opening downward, the adsorption end 2.1 of the template adsorption fixture 2 is located at the bottom of the embossed template groove 2.2, and the imprinted template groove 2.2 is located Above the wafer installation groove 1.1, the second electrode pattern plate 8 is installed on the top surface of the wafer table 1, the first electrode pattern plate 7 is installed on the bottom surface of the template adsorption fixture 2, and the first electrode pattern plate 7 is located on the second Above the two electrode graphics boards 8, the electrode graphics in the first electrode graphics board 7 and the second electrode graphics board 8 are complementary electrode graphics, and the positive and negative poles of the first electrode graphics board 7 are corresponding to the resistance meter 4. The positive and negative poles are connected, the template adsorption fixture 2 is installed on the fine-tuning table 3, the fine-tuning table 3 is used to adjust the position of the template adsorption fixture 2, and the control end of the adsorption control system 5 is connected to the adsorption control of the template adsorption fixture 2 end, the adsorption control system 5 is used to control the adsorption of the adsorption end 2.1 of the template adsorption fixture 2 to the imprint template 10, the crystal direction 11 of the wafer 9 is parallel to the second electrode pattern plate 8, and the imprint template 10 The direction of the stencil pattern 12 is parallel to the first electrode pattern plate 7.
上述技术方案中,微调台3为四维调整台(可调整模版吸附夹具与晶圆平行平面的两个方向,旋转角度和垂直于晶圆平台的距离),调整微调台3控制模版吸附夹具2的相对位置和接近距离。In the above technical solution, the fine-tuning table 3 is a four-dimensional adjustment table (the two directions of the template adsorption fixture and the parallel plane of the wafer can be adjusted, the rotation angle and the distance perpendicular to the wafer platform), and the adjustment fine-tuning table 3 controls the position of the template adsorption fixture 2 relative position and proximity.
上述技术方案中,纳米压印模版晶向对准装置还包括用于观察压印模版10与晶圆9是否对齐的观察系统6(放大设备)。In the above technical solution, the device for aligning the crystal orientation of the nanoimprint template further includes an observation system 6 (magnification device) for observing whether the imprint template 10 is aligned with the wafer 9 .
上述技术方案中,所述第一电极图形板7与模版吸附夹具2绝缘安装,所述第二电极图形板8与晶圆台1绝缘安装。In the above technical solution, the first electrode pattern plate 7 is insulated from the stencil adsorption jig 2 , and the second electrode pattern plate 8 is insulated from the wafer stage 1 .
上述技术方案中,所述第二电极图形板8的电极图形为与晶向11平行的矩形电极图形,矩形图形的长边与晶向平行。In the above technical solution, the electrode pattern of the second electrode pattern plate 8 is a rectangular electrode pattern parallel to the crystal direction 11, and the long side of the rectangular pattern is parallel to the crystal direction.
上述技术方案中,所述第二电极图形板8的长度大于晶圆9的半径小于晶圆9的直径,第二电极图形板8的宽度范围为10~50微米。上述范围可保证电阻最小时,模板图形和晶圆晶向角度的偏差可忽略。In the above technical solution, the length of the second electrode pattern plate 8 is greater than the radius of the wafer 9 and smaller than the diameter of the wafer 9, and the width of the second electrode pattern plate 8 ranges from 10 to 50 microns. The above range can ensure that when the resistance is minimum, the deviation of the template pattern and the orientation angle of the wafer is negligible.
上述技术方案中,所述第一电极图形板7的电极图形为两个正方形电极图形,左侧的正方形电极图形的左侧边缘与右侧的正方形电极图形的右侧边缘之间的距离等于第二电极图形板8的长度,每个正方形电极图形的边长均等于第二电极图形板8的宽度。在这个范围可保证电阻最小时,模板图形和晶圆晶向角度的偏差最小。In the above technical solution, the electrode pattern of the first electrode pattern plate 7 is two square electrode patterns, and the distance between the left edge of the left square electrode pattern and the right edge of the right square electrode pattern is equal to the first The length of the second electrode pattern plate 8 and the side length of each square electrode pattern are equal to the width of the second electrode pattern plate 8 . In this range, the minimum resistance can be guaranteed, and the deviation between the template pattern and the orientation angle of the wafer is the minimum.
上述技术方案中,所述晶圆安装凹槽1.1与压印模版凹槽2.2的深度相等,且深度范围均为1~1.5mm。这个范围可保证凹槽大于晶圆和压印模版的高度。In the above technical solution, the wafer mounting groove 1.1 and the embossing template groove 2.2 have the same depth, and both have a depth range of 1-1.5 mm. This range ensures that the grooves are larger than the height of the wafer and imprint stencil.
一种利用上述装置进行纳米压印模版晶向对准的方法,它包括如下步骤:A method for aligning the crystal direction of a nanoimprint template using the above-mentioned device, comprising the steps of:
步骤1:控制吸附控制系统5使模版吸附夹具2的吸附端2.1对压印模版10进行吸附;Step 1: Control the adsorption control system 5 to make the adsorption end 2.1 of the template adsorption fixture 2 adsorb the imprint template 10;
步骤2:使用微调台3调整模版吸附夹具2的位置,同时观察第一电极图形板7和第二电极图形板8的位置,使第二电极图形板8的左边缘和右边缘分别与第一电极图形板7的左侧正方形电极图形的左侧边缘及右侧正方形电极图形的右侧边缘对齐贴合;Step 2: Use the fine-tuning table 3 to adjust the position of the template adsorption fixture 2, and observe the positions of the first electrode pattern plate 7 and the second electrode pattern plate 8 at the same time, so that the left edge and the right edge of the second electrode pattern plate 8 are respectively in line with the first electrode pattern plate. The left edge of the left square electrode pattern of the electrode pattern plate 7 and the right edge of the right square electrode pattern are aligned and pasted;
步骤3:继续通过微调台3调整模版吸附夹具2的位置,当电阻计4得到最低的测量电阻时(此时第一电极图形板7和第二电极图形板8完全对齐),关闭吸附控制系统5,使压印模版10紧贴在晶圆9上,完成对准工作。Step 3: Continue to adjust the position of the stencil adsorption fixture 2 through the fine-tuning station 3, and when the resistance meter 4 obtains the lowest measured resistance (at this time, the first electrode pattern plate 7 and the second electrode pattern plate 8 are completely aligned), close the adsorption control system 5. Make the imprint template 10 close to the wafer 9 to complete the alignment work.
本说明书未作详细描述的内容属于本领域专业技术人员公知的现有技术。The content not described in detail in this specification belongs to the prior art known to those skilled in the art.
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| US20080003818A1 (en) * | 2006-06-30 | 2008-01-03 | Robert Seidel | Nano imprint technique with increased flexibility with respect to alignment and feature shaping |
| KR20080054804A (en) * | 2006-12-13 | 2008-06-19 | 삼성전자주식회사 | Stamp alignment method and device for nanoimprint lithography using resistance |
| CN101131537A (en) * | 2007-09-13 | 2008-02-27 | 苏州苏大维格数码光学有限公司 | A method for precise digital micro-nano imprinting |
| CN202257025U (en) * | 2011-08-26 | 2012-05-30 | 华中科技大学 | UV nanoimprint soft template fixation and alignment components |
| CN103631086A (en) * | 2012-08-21 | 2014-03-12 | 华中科技大学 | Manufacturing method for micro-nano graphs used for integrated optoelectronic device |
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Application publication date: 20170510 |