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CN106646000A - Device and method for measuring charge injection rate of analog switch - Google Patents

Device and method for measuring charge injection rate of analog switch Download PDF

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Publication number
CN106646000A
CN106646000A CN201611180036.8A CN201611180036A CN106646000A CN 106646000 A CN106646000 A CN 106646000A CN 201611180036 A CN201611180036 A CN 201611180036A CN 106646000 A CN106646000 A CN 106646000A
Authority
CN
China
Prior art keywords
analog switch
measured
charge injection
injection rate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611180036.8A
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Chinese (zh)
Inventor
张冰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Microelectronics Technology Institute
Original Assignee
Xian Microelectronics Technology Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Microelectronics Technology Institute filed Critical Xian Microelectronics Technology Institute
Priority to CN201611180036.8A priority Critical patent/CN106646000A/en
Publication of CN106646000A publication Critical patent/CN106646000A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24Arrangements for measuring quantities of charge
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

The invention discloses a device and a method for measuring a charge injection rate of an analog switch. The device comprises an analog voltage generation module, the analog voltage generation module is connected with a voltage detecting module, the voltage detecting module is connected with an input end of the analog switch to be measured, an output end of the analog switch to be measured is connected with a dual trace oscilloscope and a capacitor parallelly, the analog switch to be measured is also connected with a power supply, and the dual trace oscilloscope is connected with a measuring board module. The device and the method have the advantages that the charge injection rate of an analog switch circuit can be measured, and testing requirements of the existing analog switch in high-precision application ranges are satisfied.

Description

A kind of device and method of measure analog switch-charge injection rate
Technical field
The invention belongs to ic test technique field, is related to a kind of device of measure analog switch-charge injection rate, A kind of especially caused level signal saltus step because of analog switch parasitic capacitance Charge injection effect in high-precision applications field The test device of amount;The invention further relates to a kind of method of measure analog switch-charge injection rate.
Background technology
Analog switch is a kind of widely used universal circuit, can be realized using techniques such as CMOS, BICMOS, JFET single The functions such as road, multichannel, the selection of two-way and data, apply in signal conversion selection field, such as audio-video monitoring, Industry Control mostly Deng.As front end environment perception, middle-end data throughput, back end signal disposal ability are substantially improved, carried out using analog switch During system design, designer increasingly pays close attention to the index for being related to switching accuracy and speed in analog switch.Existing 92 editions GBs institute The test item covered and method of testing can only meet the test request of old technology condition and early stage analog switch product type, with Product technology alternates so that carry out the parameter of Test extraction using existing GB, it is impossible to answer at a high speed, in high precision suitable for main flow With.
The content of the invention
It is an object of the invention to provide a kind of device of measure analog switch-charge injection rate;Simulation can be measured to open The electric charge injection rate on powered-down road, meets testing requirement of the present analog switch in high-precision applications field.
The present invention also aims to provide a kind of method of measure analog switch-charge injection rate, open for characterizing simulation Close the output signal variable quantity that noise causes;The method of testing will lift application of the analog switch in high accuracy correlative technology field And development, it is that the universal circuit is preferably served modern high-new electronic industry development and carries out support.
The purpose of the present invention is achieved through the following technical solutions:
The device of this measure analog switch-charge injection rate, including analog voltage generation module, analog voltage produces mould Block is connected with voltage detection module, and voltage detection module is connected with the input of analog switch to be measured, analog switch to be measured it is defeated Go out end and be parallel with dual trace oscilloscope and capacitor, analog switch to be measured is also connected with power supply, dual trace oscilloscope also with test template die Block connects.
Further, of the invention the characteristics of, also resides in:
Isolation resistance is connected between analog switch wherein to be measured and voltage detection module.
Analog switch wherein to be measured enables the switching of control signal, follows the trail of the voltage change of output end load capacitance.
Another technical scheme of the present invention is that a kind of method of measure analog switch-charge injection rate is comprised the following steps: Step 1, opens test plate module, analog switch output signal voltage V to be measured during getting enable control signalOUT1;Step 2, test plate module is closed, get analog switch output signal voltage V to be measured during enable control signal disconnectsOUT2;Step 3, according to formula QINJ=CL×|VOUT1-VOUT2| calculate electric charge injection rate Q of the analog switch to be measuredINJ, wherein CLFor to be measured Analoging switch output end load capacitance value.
Further, of the invention the characteristics of, also resides in:
Wherein V in step 1OUT1To obtain the enabling pulse for enabling control signal by closed mode to highest signal voltage Between put the analog switch output signal voltage to be measured at 50% moment.
Wherein V in step 2OUT2For enable control signal enabling pulse by highest signal voltage to closed mode intermediate point The analog switch output signal voltage to be measured at 50% moment.
The invention has the beneficial effects as follows:The switching of control signal is enabled by analog switch to be measured, and follows the trail of output end The voltage change of load capacitance, the test device that this employing universal standardization test equipment builds, disclosure satisfy that to mould to be measured Intend the measurement of switch-charge injection rate, while can cover other testabilities to national regulations testing, the device can Farthest reduce the development cost of exploitation Special testing device.
Beneficial effects of the present invention are also resided in:Using the method analog switch to be measured is obtained in the difference for enabling control signal Output signal voltage under state, the method parameter extraction mode is simple, directly perceived, the required precision and signal chains to test device The integrity demands on road are low, it is easy to accomplish;Simultaneously the method compared to conventional simulation switch tell, high accuracy class index test System, reduces development cost and the cycle of test system, and is independent of the high-precision control and matching of test signal link, Performance of the analog switch in high-precision applications field can farthest be excavated.
Description of the drawings
Fig. 1 is the structural representation of the present invention;
Fig. 2 is the schematic diagram of test waveform figure of the present invention and parameter interval of definition.
Wherein:1 is analog voltage generation module;2 is voltage detection module;3 are test plate module;4 open for simulation to be measured Close;5 is power supply;6 is dual trace oscilloscope.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings:
A kind of device of measure analog switch-charge injection rate of the present invention, as shown in figure 1, including analog voltage generation module 1, analog voltage generation module 1 is connected with voltage detection module 2, and voltage detection module 2 is opened by isolation resistance with simulation to be measured Close 4 input connection;Analog switch to be measured 4 accesses power supply 5, and power supply 5 is powered to this device, enables the normal work of this device Make;Analog voltage generation module 1 sets analog input voltage signal according to the parameter request of analog switch to be measured 4, and using electricity The pressure detectable voltage signals of detection means 2;Resistance is that 0 isolation resistance is prevented from the clock logical effect of bursting of analog switch to be measured and draws The Partial charge amount re-injection analog switch input sent out, it is ensured that the precision of test result.
The output end of analog switch 4 wherein to be measured is connected with the B ports of dual trace oscilloscope 6, the output of analog switch to be measured 4 Load capacitance C that end is connected to the groundLConnection, A ports and the conducting of test plate module 3 of dual trace oscilloscope 6 enable signal end Connection;Test plate module 3 can produce enable control signal and access in analog switch to be measured 4, and enabling control signal can Make the switching between conducting is enabled and disconnected of analog switch to be measured 4.
Said apparatus can be applied in test of the operating frequency of analog switch to be measured 4 less than 6GHz.
Present invention also offers a kind of method of measure analog switch-charge injection rate, its detailed process is:Step 1, beats Test plate module is opened, analog switch output signal voltage V to be measured during getting enable control signalOUT1, wherein VOUT1It is to make The enabling pulse of energy control signal is exported by the analog switch to be measured of closed mode to the moment of highest signal voltage intermediate point 50% Signal voltage;Step 2, closes test plate module, gets analog switch output signal to be measured during enable control signal disconnects Voltage VOUT2, wherein VOUT2Be enable control signal enabling pulse by highest signal voltage to closed mode intermediate point 50% The analog switch output signal voltage to be measured at moment;Step 3, according to formula QINJ=CL×|VOUT1-VOUT2| calculate this to be measured Electric charge injection rate Q of analog switchINJ, wherein CLFor analoging switch output end load capacitance value to be measured.
The present invention specific embodiment be:Analog switch model to be measured is the ADG506 of ADI companies of the U.S., and this is a kind of single Path type analog switch device.First the supply port of analog switch to be measured is respectively connected into 5V power supplys and ground, and sets simulation Voltage generating module produces 2V constant voltages and accesses the signal input part of analog switch to be measured, voltage detection module and mould to be measured Intend the input connection of switch, monitor input signal situation;By the input of analog switch to be measured and analog voltage generation module Between concatenate isolation resistance RS, RSResistance be 0;By the output end of analog switch to be measured and load capacitance CL(CL=1nF) one End is connected after being connected with the B ports of dual trace oscilloscope, load capacitance CLThe other end is grounded;Test plate module is produced and enables control letter Number, and be connected with analog switch to be measured so as to generation allows analog switch to be measured by the enable control letter being not turned on to conducting state Number, the A ports of dual trace oscilloscope are connected with the control signal wire of test plate module.
Aforesaid operations process is completed, then according to the waveform output control signal described in Fig. 2, observes dual trace oscilloscope, note Analog switch output signal voltage V during record control signal enableOUT1(sampling instant is defined as control signal enabling pulse by closing When disconnected state is to highest signal voltage intermediate point 50%), control signal turn off during analog switch output signal voltage VOUT2(adopt The sample moment is defined as control signal by highest signal voltage to the moment point for turning off intermediate point 50%), it is determined that analog switch is defeated Output load capacitance CLUnder the conditions of, by formula QINJ=CL×|VOUT1-VOUT2| obtain electric charge injection rate QINJ

Claims (6)

1. a kind of device of measure analog switch-charge injection rate, it is characterised in that including analog voltage generation module (1), mould Intend voltage generating module (1) to be connected with voltage detection module (2), the input of voltage detection module (2) and analog switch to be measured (4) End connection, the output end of analog switch (4) to be measured is parallel with dual trace oscilloscope (6) and capacitor, analog switch (4) to be measured also with Power supply (5) connects, and dual trace oscilloscope (6) is also connected with test plate module (3).
2. the device of measure analog switch-charge injection rate according to claim 1, it is characterised in that the simulation to be measured Isolation resistance is connected between switch (4) and voltage detection module (2).
3. the device of measure analog switch-charge injection rate according to claim 1, it is characterised in that the simulation to be measured Switch (4) enables the switching of control signal, follows the trail of the voltage change of output end load capacitance.
4. a kind of method of measure analog switch-charge injection rate, it is characterised in that comprise the following steps:
Step 1, opens test plate module, analog switch output signal voltage V to be measured during getting enable control signalOUT1
Step 2, closes test plate module, gets analog switch output signal voltage to be measured during enable control signal disconnects VOUT2
Step 3, according to formula QINJ=CL×|VOUT1-VOUT2| calculate electric charge injection rate Q of the analog switch to be measuredINJ, wherein CLFor analoging switch output end load capacitance value to be measured.
5. the method for measure analog switch-charge injection rate according to claim 4, it is characterised in that in the step 1 VOUT1To obtain the enabling pulse for enabling control signal by the to be measured of closed mode to the moment of highest signal voltage intermediate point 50% Analog switch output signal voltage.
6. the method for measure analog switch-charge injection rate according to claim 4, it is characterised in that in the step 2 VOUT2To enable the to be measured simulation of the enabling pulse by highest signal voltage to the moment of closed mode intermediate point 50% of control signal Switch output signal voltage.
CN201611180036.8A 2016-12-19 2016-12-19 Device and method for measuring charge injection rate of analog switch Pending CN106646000A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611180036.8A CN106646000A (en) 2016-12-19 2016-12-19 Device and method for measuring charge injection rate of analog switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611180036.8A CN106646000A (en) 2016-12-19 2016-12-19 Device and method for measuring charge injection rate of analog switch

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Publication Number Publication Date
CN106646000A true CN106646000A (en) 2017-05-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109444781A (en) * 2018-09-11 2019-03-08 国网浙江省电力有限公司电力科学研究院 A kind of GIS partial discharge superfrequency sensitivity check method based on signal propagation characteristics

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1376332A (en) * 1999-08-23 2002-10-23 英特尔公司 Method and apparatus for matching common mode output voltage at a switched-capacitor to continuous-time interface
US20030020530A1 (en) * 2001-07-27 2003-01-30 Lee Wing Foon Method for nulling charge injection in switched networks
US7272521B1 (en) * 2005-02-15 2007-09-18 Lockheed Martin Corporation Measurement of phase nonlinearity of non-linear devices
WO2010006220A1 (en) * 2008-07-09 2010-01-14 Analog Devices, Inc. Instrumentation input systems
CN104716939A (en) * 2013-12-17 2015-06-17 亚德诺半导体集团 Analog switches and methods for controlling analog switches

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1376332A (en) * 1999-08-23 2002-10-23 英特尔公司 Method and apparatus for matching common mode output voltage at a switched-capacitor to continuous-time interface
US20030020530A1 (en) * 2001-07-27 2003-01-30 Lee Wing Foon Method for nulling charge injection in switched networks
US7272521B1 (en) * 2005-02-15 2007-09-18 Lockheed Martin Corporation Measurement of phase nonlinearity of non-linear devices
WO2010006220A1 (en) * 2008-07-09 2010-01-14 Analog Devices, Inc. Instrumentation input systems
CN104716939A (en) * 2013-12-17 2015-06-17 亚德诺半导体集团 Analog switches and methods for controlling analog switches

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
佚名: "半导体集成电路模拟开关测试方法(征求意见稿)", 《HTTPS://MAX.BOOK118.COM/HTML/2016/0419/40803344.SHTM》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109444781A (en) * 2018-09-11 2019-03-08 国网浙江省电力有限公司电力科学研究院 A kind of GIS partial discharge superfrequency sensitivity check method based on signal propagation characteristics

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Application publication date: 20170510

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