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CN106601634A - Chip package technology and chip package structure - Google Patents

Chip package technology and chip package structure Download PDF

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Publication number
CN106601634A
CN106601634A CN201610723159.5A CN201610723159A CN106601634A CN 106601634 A CN106601634 A CN 106601634A CN 201610723159 A CN201610723159 A CN 201610723159A CN 106601634 A CN106601634 A CN 106601634A
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chip
layer
electrode pad
position data
chip package
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CN106601634B (en
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谭小春
陆培良
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HEFEI ZUAN INVESTMENT PARTNERSHIP ENTERPRISE
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Hefei Zuan Investment Partnership Enterprise
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    • H10W74/014
    • H10W70/60
    • H10W72/013
    • H10W72/30
    • H10W72/50
    • H10W74/012
    • H10W74/15
    • H10W70/09
    • H10W70/099
    • H10W72/073
    • H10W72/874
    • H10W72/9413
    • H10W74/019
    • H10W90/726
    • H10W90/734

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  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本发明提供了一种芯片封装工艺以及芯片封装结构,在本发明提供的芯片封装工艺中,在芯片贴装到封装载体后,先获取芯片上的电极焊盘的位置数据,然后利用所获得电极焊盘的位置数据在包封所述芯片的包封体上形成重布线层,以重新排布所述芯片的电极,因此,形成的所述重布线层与芯片直接的对准度更高,且所述封装工艺简单,通过所述工艺形成的封装结构制造成本低,可靠性和集成度均高。

The present invention provides a chip packaging process and a chip packaging structure. In the chip packaging process provided by the present invention, after the chip is attached to the packaging carrier, the position data of the electrode pad on the chip is obtained first, and then the obtained electrode pad is used to The position data of the pad forms a rewiring layer on the encapsulation body encapsulating the chip, so as to rearrange the electrodes of the chip. Therefore, the formed rewiring layer has a higher degree of direct alignment with the chip, Moreover, the packaging process is simple, and the packaging structure formed by the process has low manufacturing cost and high reliability and integration.

Description

芯片封装工艺以及芯片封装结构Chip packaging process and chip packaging structure

技术领域technical field

本发明涉及芯片封装技术领域,尤其涉及一种芯片封装工艺以及芯片封装结构。The invention relates to the technical field of chip packaging, in particular to a chip packaging process and a chip packaging structure.

背景技术Background technique

在制造集成电路时,芯片通常在与其它电子装配件的集成之前被封装。早期应用较广泛的芯片封装工艺为引线键合封装工艺,即通过将芯片上的电极端子通过金属引线键合到引线框架上,然后塑封的封装方式。然而通过引线键合封装工艺形成的封装结构的面积较大,且封装性能收到金属引线电阻和寄生电容的影响而不能有效的提高。因此,随后倒装封装工艺应运而生,通过倒装封装工艺形成的倒装封装结构由于封装尺寸小,封装性能高而备受关注。In the manufacture of integrated circuits, chips are typically packaged prior to integration with other electronic assemblies. The chip packaging process that was widely used in the early days was the wire bonding packaging process, that is, the electrode terminals on the chip are bonded to the lead frame through metal wires, and then the packaging method is plastic-encapsulated. However, the area of the packaging structure formed by the wire bonding packaging process is relatively large, and the packaging performance cannot be effectively improved due to the influence of metal lead resistance and parasitic capacitance. Therefore, the flip-chip packaging process emerged as the times require, and the flip-chip packaging structure formed by the flip-chip packaging process has attracted much attention due to its small package size and high packaging performance.

图1为通过倒装封装工艺形成的倒装封装结构示意图,芯片02通过位于其有源面上的导电凸块021电连接到引线框架01上,塑封料03包封芯片02并裸露出引线框架01的底部以作为与外部电路电连接的引脚。形成这种倒装封装结构的倒装封装工艺步骤包括芯片的粘贴、倒扣和塑封。如图2所示,将多块芯片02粘贴到封装载体00上的预定位置处,其中每一块芯片02的有源面的电子端子上设置导电凸块021,然后,将封装载体00上的芯片倒扣至如图3所示的已设定好的引线框架01上,从而使得导电凸块021与引线框架01上的的焊盘对应电连接,最后进行塑封形成塑封体03。然而,如图2所示,部分芯片02不能非常精准的粘贴到封装基板00上的预定位置处(虚线处),这种粘贴时不可避免的偏差会使得芯片02倒扣至引线框架01上时,如图4所示,导电凸块021不能与引线框架上对应的焊盘电连接,从而可能引起封装结构的短路或断路的现象,影响了封装的可靠性。Figure 1 is a schematic diagram of the structure of a flip-chip package formed by a flip-chip packaging process. The chip 02 is electrically connected to the lead frame 01 through the conductive bump 021 on its active surface, and the plastic compound 03 encapsulates the chip 02 and exposes the lead frame. 01 as a pin for electrical connection with an external circuit. The flip-chip packaging process steps for forming this flip-chip packaging structure include chip bonding, flipping and plastic packaging. As shown in FIG. 2 , a plurality of chips 02 are pasted at predetermined positions on the package carrier 00 , wherein conductive bumps 021 are arranged on the electronic terminals on the active surface of each chip 02 , and then the chips on the package carrier 00 are It is buckled upside down onto the pre-set lead frame 01 as shown in FIG. 3 , so that the conductive bump 021 is electrically connected to the pad on the lead frame 01 , and finally plastic-encapsulated to form a plastic package 03 . However, as shown in FIG. 2 , some chips 02 cannot be pasted to the predetermined position on the package substrate 00 (the dotted line) very precisely. This inevitable deviation during pasting will cause the chip 02 to be buckled upside down on the lead frame 01. , as shown in FIG. 4 , the conductive bump 021 cannot be electrically connected to the corresponding pad on the lead frame, which may cause short circuit or open circuit of the package structure, which affects the reliability of the package.

此外,在现有技术中,当需要采用重布线层重新排布芯片02上的电极时,会采用预设的图形在芯片02之上形成重布线层,而然,芯片02在被贴装在封装载体的过程中,会偏离预设的位置,使的芯片02上的电极焊盘的位置也会相应的偏离预设的位置,使得所形成的重布线层与芯片02之间无法精确的对准,从而会影响芯片封装的可靠性。In addition, in the prior art, when the electrodes on the chip 02 need to be rearranged by using the redistribution layer, the redistribution layer will be formed on the chip 02 with a preset pattern. However, the chip 02 is mounted on the In the process of packaging the carrier, it will deviate from the preset position, so that the position of the electrode pad on the chip 02 will also deviate from the preset position accordingly, so that the formed redistribution layer and the chip 02 cannot be accurately aligned. Accuracy, which will affect the reliability of the chip package.

发明内容Contents of the invention

有鉴于此,本发明提供了一种芯片封装工艺以及芯片封装结构,以简化工艺复杂度、降低封装的成本、提高芯片封装的可靠性以及加大封装芯片的集成度。In view of this, the present invention provides a chip packaging process and a chip packaging structure to simplify the process complexity, reduce packaging costs, improve the reliability of chip packaging, and increase the integration of packaged chips.

一种芯片封装工艺,其特征在于,包括:A chip packaging process, characterized in that, comprising:

将至少一块芯片以有源面朝上的方式贴装于封装载体上,所述芯片的有源面上设置有电极焊盘;Mounting at least one chip on the packaging carrier with the active surface facing up, the active surface of the chip is provided with electrode pads;

获取所述电极焊盘的位置数据,并存储所述位置数据:Obtain the position data of the electrode pad, and store the position data:

根据所述位置数据,在用于包封所述芯片的包封体之上至少形成一层重布线层,以重新排布所述芯片的电极位置。According to the position data, at least one redistribution layer is formed on the encapsulation body for encapsulating the chip, so as to rearrange the positions of the electrodes of the chip.

优选地,在所述包封体之上形成第一层所述重布线层的步骤包括:Preferably, the step of forming a first layer of the redistribution layer on the encapsulation body includes:

在所述包封体上形成一层金属层,所述金属层至少包括一层金属,A metal layer is formed on the encapsulation body, the metal layer includes at least one layer of metal,

在所述金属层表面形成一层光刻胶,forming a layer of photoresist on the surface of the metal layer,

根据所述位置数据对待曝光图形进行修正,使得修正后的曝光图形与所述电极焊盘的位置相匹配,并根据修正后的曝光图形对所述光刻胶进行曝光,以获得图案化的光刻胶层,Correct the pattern to be exposed according to the position data so that the corrected exposure pattern matches the position of the electrode pad, and expose the photoresist according to the corrected exposure pattern to obtain patterned light Resist layer,

以所述图案化的光刻胶层为掩模,对所述金属层进行蚀刻后去除所述光刻胶层,以形成所述第一层从布线层。Using the patterned photoresist layer as a mask, the metal layer is etched and then the photoresist layer is removed to form the first secondary wiring layer.

优选地,在所述包封体之上形成第一层所述重布线层的步骤包括:Preferably, the step of forming a first layer of the redistribution layer on the encapsulation body includes:

在所述包封体上形成金属层,forming a metal layer on the encapsulation,

在所述金属层表面形成一层光刻胶,forming a layer of photoresist on the surface of the metal layer,

根据所述位置数据对待曝光图形进行修正,使得修正后的曝光图形与所述电极焊盘的位置相匹配,并根据修正后的曝光图形对所述光刻胶进行曝光,以获得图案化的光刻胶层,Correct the pattern to be exposed according to the position data so that the corrected exposure pattern matches the position of the electrode pad, and expose the photoresist according to the corrected exposure pattern to obtain patterned light Resist layer,

以所述图案化的光刻胶层为掩模,所述金属层之上进行电镀,以形成图案化的电镀层,然后去除所述光刻胶层,Using the patterned photoresist layer as a mask, performing electroplating on the metal layer to form a patterned electroplating layer, and then removing the photoresist layer,

蚀刻掉被所述电镀层裸露部分的所述金属层,以形成所述第一层重布线层。Etching away the metal layer exposed by the electroplating layer to form the first redistribution layer.

优选地,所述待曝光图形为激光直接成像机中的待曝光图形,所述激光直接成像机根据所述位置数据对所述待曝光图形进行所修正后,并将修正后的曝光图形直接扫描成像在所述光刻胶上,以获得所述图案化的光刻胶层。Preferably, the pattern to be exposed is a pattern to be exposed in a laser direct imaging machine, and the laser direct imaging machine corrects the pattern to be exposed according to the position data, and directly scans the corrected exposure pattern imaging on the photoresist to obtain the patterned photoresist layer.

优选地,所述的芯片封装工艺还包括,在最顶层重布线层的表面形成焊接层,所述芯片通过所述焊接层与外部相连。Preferably, the chip packaging process further includes forming a soldering layer on the surface of the topmost redistribution layer, and the chip is connected to the outside through the soldering layer.

优选地,所述的芯片封装工艺还包括:形成所述Preferably, the chip packaging process further includes: forming the

包封体,且在形成所述重布线层之前使所述包封体裸露出所述电极焊盘。an encapsulation body, and exposing the electrode pads from the encapsulation body before forming the rewiring layer.

优选地,在获取所述位置数据之前,且在将所述芯片贴装在所述封装载体之后形成所述包封体,且透过所述包封体可视所述电极焊盘。Preferably, the encapsulation is formed before the position data is acquired and after the chip is mounted on the packaging carrier, and the electrode pads are visible through the encapsulation.

优选地,用透明的绝缘材料包封所述芯片,以形成所述包封体。Preferably, the chip is encapsulated with a transparent insulating material to form the encapsulation body.

优选地,在获取所述位置数据之后形成所述包封体。Preferably, said enclosure is formed after acquiring said position data.

优选地,在形成所述重布线层之前根据所述位置数据对所述包封体进行开口处理,以裸露出所述电极焊盘。Preferably, before forming the redistribution layer, the encapsulation body is opened according to the position data, so as to expose the electrode pad.

优选地,所述封装载体上设置有定位标记。Preferably, positioning marks are provided on the packaging carrier.

所述位置数据表征所述电极焊盘相对所述定位标记的相对位置。The position data characterizes the relative position of the electrode pad relative to the positioning mark.

优选地,所述封装载体包括封装基板和位于所述封装基板上的绝缘层,在形成所述焊接层之后,去除所述封装基板,并沿着预设定的切割道切割所述包封体和绝缘层,以形成至少一颗被绝缘材料包覆的芯片封装结构。Preferably, the package carrier includes a package substrate and an insulating layer on the package substrate, after the solder layer is formed, the package substrate is removed, and the package is cut along a preset cutting line and an insulating layer to form at least one chip package structure covered by an insulating material.

优选地,通过光学扫描定位的方法获取所述位置数据。Preferably, the position data is acquired by means of optical scanning and positioning.

优选地,通过光学扫描定位的方法获取所述位置数据的步骤包括:Preferably, the step of obtaining the position data by means of optical scanning and positioning includes:

使所有所述芯片的轮廓上的颜色或形状突显,然后获取所述芯片的轮廓图像,最后对所述轮廓图像进行图像处理以获得所述位置数据;highlighting the colors or shapes on the contours of all the chips, then acquiring contour images of the chips, and finally performing image processing on the contour images to obtain the position data;

或者,使所有所述电极焊盘中心点上的颜色或形状突显,然后获取所有所述电极焊盘的中心点构成的中心点图像,最后对所述中心点图像进行图像处理以获得所述位置数据。Alternatively, highlight the colors or shapes on the center points of all the electrode pads, then acquire a center point image composed of the center points of all the electrode pads, and finally perform image processing on the center point image to obtain the position data.

优选地,所述的芯片封装工艺还包括,在将所述芯片贴装在所述封装载体之前,在所述电极焊盘上形成导电体,Preferably, the chip packaging process further includes, before mounting the chip on the package carrier, forming a conductor on the electrode pad,

在将所述包封体进行开口处理后,所述导电体被所述包封体裸露。After the encapsulation is subjected to opening treatment, the conductor is exposed by the encapsulation.

优选地,所述导电体为铜球,所述铜球与所述电极焊盘接触并电连接。Preferably, the conductor is a copper ball, and the copper ball contacts and is electrically connected to the electrode pad.

优选地,所述的芯片封装工艺还包括,在将所述芯片贴装在所述封装载体之前,在所述封装载体上形成至少两个所述定位标记,以用于确定一个坐标轴,Preferably, the chip packaging process further includes, before mounting the chip on the packaging carrier, forming at least two positioning marks on the packaging carrier for determining a coordinate axis,

所述电极焊盘相对所述定位标记的相对位置为所述电极焊盘在所述坐标轴中的位置。The relative position of the electrode pad relative to the positioning mark is the position of the electrode pad in the coordinate axis.

优选地,所述定位标记为定位孔或者为实心圆的焊盘。Preferably, the positioning mark is a positioning hole or a pad of a solid circle.

优选地,对所述包封体进行开口处理的步骤包括:Preferably, the step of opening the envelope includes:

根据所述位置数据和所述定位标记,定位出所述电极焊盘所在的位置,Locating the position of the electrode pad according to the position data and the positioning mark,

在所述电极焊盘所在的位置处利用激光束对所述包封体进行开口处理,以去除所述电极焊盘上的所述绝缘材料。A laser beam is used to open the encapsulation body at the position where the electrode pad is located, so as to remove the insulating material on the electrode pad.

优选地,利用激光钻孔机对所述包封体进行所述开口处理,对所述包封体进行开口处理的步骤包括:Preferably, a laser drilling machine is used to perform the opening treatment on the enclosure, and the step of performing the opening treatment on the enclosure includes:

所述激光钻孔机根据所述位置数据修正待钻孔图形,并根据所述修正后的钻孔图形对所述包封体进行钻孔,以将所述修正后的钻孔图形转移至所述包封体上,从而在所述包封体上形成裸露所述电极焊盘的开口。The laser drilling machine corrects the hole pattern to be drilled according to the position data, and drills the encapsulation body according to the corrected hole pattern, so as to transfer the corrected hole pattern to the On the encapsulation body, an opening exposing the electrode pad is formed on the encapsulation body.

一种根据上述任意一项所述的芯片封装工艺所制造的芯片封装结构。A chip packaging structure manufactured according to any one of the chip packaging processes described above.

由上可见,在本发明提供的芯片封装工艺和结构中,在芯片贴装到封装载体后,先获取芯片上的电极焊盘的位置数据,然后利用所获得电极焊盘的位置数据在包封所述芯片的包封体上形成重布线层,以重新排布所述芯片的电极,因此,形成的所述重布线层与芯片直接的对准度更高,且所述封装工艺简单,通过所述工艺形成的封装结构制造成本低,可靠性和集成度均高。It can be seen from the above that in the chip packaging process and structure provided by the present invention, after the chip is mounted on the packaging carrier, first obtain the position data of the electrode pads on the chip, and then use the obtained position data of the electrode pads in the package A rewiring layer is formed on the encapsulation of the chip to rearrange the electrodes of the chip. Therefore, the formed rewiring layer has a higher degree of direct alignment with the chip, and the packaging process is simple. The packaging structure formed by the process has low manufacturing cost and high reliability and integration.

此外,在本发明提供的芯片封装工艺中,在引出芯片的电极前,先形成用于保护芯片的包封体,芯片的电极通过位于包封体上重布线层引出与外部电连接。因此,本发明提供的芯片封装工艺,无需用于到底部填充工艺,工艺简单且成本低,而且由于无需使用导电凸块与引线框架电连接,因此本发明提供的芯片封装工艺适应超密间距的电极端子的芯片封装,有利于提高封装芯片的集成度。In addition, in the chip packaging process provided by the present invention, before the electrode of the chip is drawn out, an encapsulation body for protecting the chip is formed first, and the electrode of the chip is electrically connected to the outside through the rewiring layer located on the encapsulation body. Therefore, the chip packaging process provided by the present invention does not need to be used for the bottom filling process, the process is simple and the cost is low, and because there is no need to use conductive bumps to electrically connect with the lead frame, the chip packaging process provided by the present invention is suitable for ultra-fine spacing. The chip packaging of the electrode terminals is conducive to improving the integration of the packaged chips.

附图说明Description of drawings

通过以下参照附图对本发明实施例的描述,本发明的上述以及其他目的、特征和优点将更为清楚,在附图中:Through the following description of the embodiments of the present invention with reference to the accompanying drawings, the above-mentioned and other objects, features and advantages of the present invention will be more clear, in the accompanying drawings:

图1为一种倒装封装结构示意图;FIG. 1 is a schematic diagram of a flip-chip packaging structure;

图2为芯片粘贴至封装载体上的结构示意图;Fig. 2 is a structural schematic diagram of sticking the chip on the packaging carrier;

图3为引线框架的结构示意图;Fig. 3 is the structural representation of lead frame;

图4为芯片倒扣至引线框架上的结构示意图;Fig. 4 is a structural schematic diagram of flipping the chip onto the lead frame;

图5a~5e为根据本发明实施例的芯片封装工艺中各个工艺步骤形成结构的剖面示意图。5a-5e are schematic cross-sectional views of structures formed in various process steps in the chip packaging process according to an embodiment of the present invention.

具体实施方式detailed description

以下将参照附图更详细地描述本发明。在各个附图中,相同的组成部分采用类似的附图标记来表示。为了清楚起见,附图中的各个部分没有按比例绘制。此外,可能未示出某些公知的部分。为了简明起见,可以在一幅图中描述经过数个步骤后获得的结构。在下文中描述了本发明的许多特定的细节,例如每个组成部分的结构、材料、尺寸、处理工艺和技术,以便更清楚地理解本发明。但正如本领域的技术人员能够理解的那样,可以不按照这些特定的细节来实现本发明。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various drawings, the same components are denoted by similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For simplicity, the structure obtained after several steps can be described in one figure. In the following, many specific details of the present invention are described, such as the structure, material, size, process and technique of each constituent part, for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art.

图5a~5e为根据本发明实施例的芯片封装工艺中各个工艺步骤形成结构的示意图。下面将结合图5a~5e具体阐述本发明提供的芯片封装工艺。为了能更好的展示各个工艺步骤中形成的结构,图5a与图5b为对应工艺步骤中形成结构的俯视图,而图5c、5d以及5e为对应工艺步骤中形成结构的局部剖面图。5 a - 5 e are schematic diagrams of structures formed by various process steps in the chip packaging process according to an embodiment of the present invention. The chip packaging process provided by the present invention will be described in detail below with reference to FIGS. 5a-5e. In order to better show the structures formed in each process step, FIGS. 5a and 5b are top views of the structures formed in the corresponding process steps, and FIGS. 5c, 5d and 5e are partial cross-sectional views of the structures formed in the corresponding process steps.

依据本发明实施例提供的芯片封装工艺包括以下步骤:The chip packaging process provided according to the embodiment of the present invention includes the following steps:

步骤1:如图5a所示,其为芯片贴装工艺形成结构的俯视图,将至少一块芯片21以有源面朝上的方式贴装于封装载体11上,芯片的有源面设置有电极焊盘211,此外,封装载体11上还可以设置有定位标记111。Step 1: As shown in Figure 5a, which is a top view of the structure formed by the chip mounting process, at least one chip 21 is mounted on the package carrier 11 with the active surface facing upward, and the active surface of the chip is provided with electrode soldering. disc 211 , in addition, positioning marks 111 may also be provided on the package carrier 11 .

在将芯片21贴装在封装载体11之前,通常还需要在在封装载体11上形成至少两个所述定位标记111,以用于确定一个坐标轴。例如本实施例中的定位标记111有四个,分别位于封装载体11的四个角上。在本申请中,电极焊盘211相对定位标记111的相对位置是指电极焊盘211在由定位标记111确定的坐标轴中的位置。其中,定位标记111可以为定位孔,也可以为实心圆的焊盘。Before the chip 21 is mounted on the package carrier 11 , it is generally required to form at least two positioning marks 111 on the package carrier 11 for determining a coordinate axis. For example, there are four positioning marks 111 in this embodiment, which are respectively located on the four corners of the package carrier 11 . In the present application, the relative position of the electrode pad 211 relative to the positioning mark 111 refers to the position of the electrode pad 211 in the coordinate axis determined by the positioning mark 111 . Wherein, the positioning mark 111 may be a positioning hole, or may be a pad of a solid circle.

步骤2:获取电极焊盘相对定位标记111的位置数据,并储存所述位置数据。Step 2: Obtain the position data of the electrode pad relative to the positioning mark 111, and store the position data.

所述位置数据为电极焊盘211在步骤1里所述的坐标轴中的坐标参数,其表征了电极焊盘211相对定位标记111的相对位置。在本实施例中,通过光学扫描定位的方法获取所述位置数据。具体的,通过光学扫描定位的方法获取所述位置数据的步骤包括:The position data is the coordinate parameter of the electrode pad 211 in the coordinate axis described in step 1, which characterizes the relative position of the electrode pad 211 relative to the positioning mark 111 . In this embodiment, the position data is acquired through an optical scanning positioning method. Specifically, the step of obtaining the position data by means of optical scanning and positioning includes:

步骤21a:使所有芯片21的轮廓处的颜色或形状突显。例如,将贴装芯片21后的封装载体11放置在光学扫描定位设备中的光学扫描区,通过光学扫描设备的灯光照射,使得芯片21的轮廓处光照亮对或对比度比其它区域的要高,从而使芯片21的轮廓上的颜色或形状突显。Step 21a: Highlight the colors or shapes of the contours of all the chips 21 . For example, the packaging carrier 11 after mounting the chip 21 is placed in the optical scanning area of the optical scanning positioning device, and illuminated by the light of the optical scanning device, so that the light illumination or contrast of the outline of the chip 21 is higher than that of other areas , so that the color or shape on the outline of the chip 21 is highlighted.

步骤22a:在芯片21的轮廓上的颜色突显后,获取芯片21的轮廓图像。例如,可以通过拍照或者光学扫描的方式获得所述轮廓图像。Step 22a: after the color on the outline of the chip 21 is highlighted, acquire the outline image of the chip 21 . For example, the contour image can be obtained by taking pictures or optical scanning.

步骤23a:对所获得的轮廓图像进行图像处理,以获得所述位置数据。Step 23a: Perform image processing on the obtained outline image to obtain the position data.

在其它实施例中,通过光学扫描定位的方法获取所述位置数据的步骤也可以为如下步骤:In other embodiments, the step of obtaining the position data by means of optical scanning and positioning may also be the following steps:

步骤21b:使所有所述电极焊盘211中心点上的颜色或形状突显。使所述电极焊盘中心点上的颜色或形状突显的方法可以与步骤21a中的相同。Step 21b: making the colors or shapes at the center points of all the electrode pads 211 stand out. The method for highlighting the color or shape at the center point of the electrode pad may be the same as that in step 21a.

步骤22b:在电极焊盘211中心点的颜色突显后,获取电极焊盘211的的中心点构成的中心点图像。例如,可以通过拍照或者光学扫描的方式获得所述中心点图像。Step 22b: After the color of the center point of the electrode pad 211 is highlighted, acquire the center point image formed by the center point of the electrode pad 211. For example, the center point image can be obtained by taking pictures or optical scanning.

步骤23b:对中心点图像进行图像处理,以获得所述位置数据。Step 23b: Perform image processing on the central point image to obtain the position data.

步骤3:如图5b所示,用绝缘材料包封在芯片21上,以形成包封体31,且使包封体31裸露定位标记111。图5c为图5b中一个封装单元结构的剖面结构示意图,所述每一个所述封装单元由一个芯片21、位于该芯片21下的部分封装载体11以及包封该芯片21的包封体31构成。Step 3: As shown in FIG. 5 b , encapsulate the chip 21 with an insulating material to form an encapsulation body 31 , and expose the encapsulation body 31 to the positioning mark 111 . Fig. 5c is a schematic cross-sectional structure diagram of a package unit structure in Fig. 5b, each of the package units is composed of a chip 21, a part of the package carrier 11 located under the chip 21, and an encapsulation body 31 encapsulating the chip 21 .

用于形成包封体31的绝缘材料可以为塑封料,例如环氧塑封料,可以通过塑封工艺形成包封体31。此外,如图5c所示,芯片21与封装载体11直接还设置有粘接层213,且在本实施例中,封装载体11包括封装基板112和位于所述封装基板上的绝缘层113,所述绝缘层可以为塑封料,即所述绝缘层113与所述包封体31的形成材料可以相同。因此,在步骤1中,芯片21通过粘接层213粘贴在封装载体11上的预定位置处。在本实施例中,形成包封体31的材料为不透明的塑封料,则包封体31是不透明的,因此,在形成包封体前,需要先获取电极焊盘相对定位标记111的位置数据。The insulating material used to form the encapsulation body 31 may be a molding compound, such as epoxy molding compound, and the encapsulation body 31 may be formed through a molding process. In addition, as shown in FIG. 5c, the chip 21 and the package carrier 11 are directly provided with an adhesive layer 213, and in this embodiment, the package carrier 11 includes a package substrate 112 and an insulating layer 113 on the package substrate, so The insulating layer may be a plastic encapsulant, that is, the insulating layer 113 and the encapsulation body 31 may be made of the same material. Therefore, in step 1, the chip 21 is pasted on the package carrier 11 at a predetermined position through the adhesive layer 213 . In this embodiment, the material forming the encapsulation 31 is an opaque plastic encapsulant, so the encapsulation 31 is opaque. Therefore, before forming the encapsulation, it is necessary to obtain the position data of the electrode pad relative to the positioning mark 111 .

而在依据本发明的另一实施例中,包封体31也可在获取电极焊盘211相对定位标记111的位置数据之前,且芯片21贴装在封装载体11之后形成,即上述实施例中的步骤2与步骤3的顺序可以调换。在这种情况下,为了更好的获取所述位置数据,所述包封体31的至少一部分是透明的,所述至少一部分包括位于所述电极焊盘211上的这一部分,从而使得在获取所述位置数据之前,透过所述包封体31可视所述电极焊盘,以便于后续工艺步骤中能更好的获取所述位置数据。为了实习透过所述包封体31可视所述电极焊盘这一目的,可以采用透明的绝缘材料来包封芯片21,以形成包封体31。在一些其它实施例中,形成包封体31的方式可以为:先先用不透明的绝缘材料囊封(即不完全包封)芯片21形成囊封体,所述囊封体裸露出所述电极焊盘211,然后再在所述囊封体之上,用透明材料形成一层覆盖电极焊盘211的覆盖体,所述囊封体与覆盖体共同构成所述包封体31。步骤4:如图5d所示,根据步骤2中所存储的位置数据和定位标记111(图5d中为示出),对包封体31进行开口处理,以去除电极焊盘211上方的用于构成包封体的绝缘材料。In another embodiment according to the present invention, the encapsulation body 31 can also be formed before the position data of the electrode pad 211 relative to the positioning mark 111 is obtained, and after the chip 21 is mounted on the package carrier 11, that is, in the above-mentioned embodiment The order of steps 2 and 3 can be reversed. In this case, in order to obtain the position data better, at least a part of the encapsulation body 31 is transparent, and the at least part includes this part located on the electrode pad 211, so that when obtaining Before the position data, the electrode pads can be seen through the encapsulation body 31 , so that the position data can be better obtained in subsequent process steps. In order to practice the purpose of seeing the electrode pads through the encapsulation body 31 , the chip 21 may be encapsulated with a transparent insulating material to form the encapsulation body 31 . In some other embodiments, the way to form the encapsulation body 31 may be as follows: First, the chip 21 is encapsulated (that is, not completely encapsulated) with an opaque insulating material to form an encapsulation body, and the encapsulation body exposes the electrodes. The pad 211 , and then on the encapsulation body, a covering body covering the electrode pad 211 is formed with a transparent material, and the encapsulation body and the covering body together constitute the encapsulation body 31 . Step 4: As shown in FIG. 5d, according to the position data stored in step 2 and the positioning mark 111 (not shown in FIG. 5d), the encapsulation 31 is opened to remove the electrode pad 211 for The insulating material that makes up the enclosure.

由于在步骤4中需要对包封体31进行开口处理,为了防止开口的过程中,会损伤到芯片21上的电极焊盘211,从而损坏芯片21中的器件,如图5a~5e所示,本发明提供的芯片封装工艺步骤还可以进一步包括:在将芯片21贴装在封装载体11之前,在芯片21的电极焊盘211上形成导电体212,所述导电体在步骤3之后,也被包封体31包封。导电体212可以为铜球,铜球212直接形成于电极焊盘211上,即与电极焊盘211相接触并电连接。由于有铜球212的保护,就算对包封体31进行开口时,就算开口深度比预设定的稍微深点,也不会对电极焊盘211造成损坏。Since the encapsulation body 31 needs to be opened in step 4, in order to prevent the electrode pads 211 on the chip 21 from being damaged during the opening process, thereby damaging the devices in the chip 21, as shown in Figures 5a-5e, The chip packaging process steps provided by the present invention may further include: before mounting the chip 21 on the package carrier 11, forming a conductor 212 on the electrode pad 211 of the chip 21, and the conductor 212 is also formed after step 3. The encapsulation body 31 encapsulates. The conductor 212 may be a copper ball, and the copper ball 212 is directly formed on the electrode pad 211 , that is, is in contact with and electrically connected to the electrode pad 211 . Due to the protection of the copper balls 212 , even if the encapsulation body 31 is opened, even if the opening depth is slightly deeper than the preset one, the electrode pads 211 will not be damaged.

在步骤4中,对包封体进行开口的具体步骤包括:In step 4, the specific steps of opening the envelope include:

步骤41:根据步骤2中所存储的位置数据和所述定位标记,定位出所述电极焊盘所在的位置。Step 41: Locate the position of the electrode pad according to the position data stored in step 2 and the positioning mark.

步骤42:在所定位出的电极焊盘所述在的位置处利用激光束对所述包封体31进行开口处理,以去除所述电极焊盘上的所述绝缘材料。Step 42: Opening the encapsulation body 31 with a laser beam at the position where the electrode pad is located, so as to remove the insulating material on the electrode pad.

在对包封体31进行开口处理时,为了使确保芯片能够与重布线层之间实现电连接,必须得保证去除电极焊盘211之上的所有绝缘材料,因从而使得开口后,电极焊盘211上的导电体212被包封体31裸露,以用于与后续形成的重布线层电连接。When opening the encapsulation body 31, in order to ensure that the chip can be electrically connected to the rewiring layer, it is necessary to ensure that all insulating materials on the electrode pads 211 are removed, so that after the opening, the electrode pads The conductor 212 on the 211 is exposed by the encapsulation body 31 for electrical connection with the subsequently formed redistribution layer.

在依据本发明的另一实施例中,可利用激光钻孔机对包封体31进行所述开口处理,其具体步骤为:使所述激光钻孔机根据所述位置数据修正待钻孔图形,并根据所述修正后的钻孔图形对包封体31进行钻孔,以将所述修正后的钻孔图形转移至包封体31上,从而在包封体31上形成裸露电极焊盘211的开口。In another embodiment according to the present invention, a laser drilling machine can be used to perform the opening process on the encapsulation body 31, and the specific steps are: make the laser drilling machine correct the hole pattern to be drilled according to the position data , and drill the encapsulation body 31 according to the amended drilling pattern, so as to transfer the amended drilling pattern to the encapsulation body 31, thereby forming an exposed electrode pad on the encapsulation body 31 211 openings.

步骤5:如图5e所示,在包封体31上至少形成一层重布线层,例如重布线层41,以重新排布芯片21的电极位置。每一层所述重布线层均为图案化的金属层,相连的两层重布线层之间彼此电连接,其中,最底层的所述重布线层与所述电极焊盘211电连接。在包封体31之上形成第一层所述重布线层的具体步骤可以包括:Step 5: As shown in FIG. 5 e , at least one rewiring layer, such as a rewiring layer 41 , is formed on the encapsulation body 31 to rearrange positions of the electrodes of the chip 21 . Each redistribution layer is a patterned metal layer, and two connected redistribution layers are electrically connected to each other, wherein the bottommost redistribution layer is electrically connected to the electrode pad 211 . The specific steps of forming the first redistribution layer on the encapsulation body 31 may include:

步骤51a:在包封体31上形成一层金属层,该金属层至少包括一层金属,且该金属层由经包封体31上的开口与电极焊盘211电连接。Step 51 a : forming a metal layer on the encapsulation body 31 , the metal layer includes at least one layer of metal, and the metal layer is electrically connected to the electrode pad 211 through the opening on the encapsulation body 31 .

步骤52a:在步骤51形成的金属层表面形成一层光刻胶。Step 52a: Form a layer of photoresist on the surface of the metal layer formed in step 51.

步骤53a:根据所述位置数据对待曝光图形进行修正,使得修正后的曝光图形与所述电极焊盘的位置相匹配,并根据修正后的曝光图形对所述光刻胶进行曝光,以获得图案化的光刻胶层。Step 53a: Correct the pattern to be exposed according to the position data, so that the corrected exposure pattern matches the position of the electrode pad, and expose the photoresist according to the corrected exposure pattern to obtain a pattern layer of photoresist.

步骤54a:以所述图案化的光刻胶层为掩模,对所述金属层进行蚀刻后去除所述光刻胶层,以形成所述第一层从布线层。Step 54 a : using the patterned photoresist layer as a mask, etching the metal layer and removing the photoresist layer to form the first secondary wiring layer.

此外,在包封体31之上形成第一层所述重布线层的具体步骤还可以包括:In addition, the specific steps of forming the first redistribution layer on the encapsulation body 31 may also include:

步骤51b:在包封体31上形成一层金属层,该金属层至少包括一层金属,且该金属层由经包封体31上的开口与电极焊盘211电连接。Step 51b: forming a metal layer on the encapsulation body 31 , the metal layer includes at least one layer of metal, and the metal layer is electrically connected to the electrode pad 211 through the opening on the encapsulation body 31 .

步骤52b:在步骤51形成的金属层表面形成一层光刻胶。Step 52b: Form a layer of photoresist on the surface of the metal layer formed in step 51.

步骤53b:根据所述位置数据对待曝光图形进行修正,使得修正后的曝光图形与所述电极焊盘的位置相匹配,并根据修正后的曝光图形对所述光刻胶进行曝光,以获得图案化的光刻胶层。Step 53b: Correct the pattern to be exposed according to the position data, so that the corrected exposure pattern matches the position of the electrode pad, and expose the photoresist according to the corrected exposure pattern to obtain a pattern layer of photoresist.

步骤54b:以所述图案化的光刻胶层为掩模,在所述金属层之上进行电镀,以形成图案化的电镀层,然后去除所述光刻胶层,Step 54b: using the patterned photoresist layer as a mask, performing electroplating on the metal layer to form a patterned electroplating layer, and then removing the photoresist layer,

步骤55b:蚀刻掉被所述电镀层裸露部分的所述金属层,以形成所述第一层重布线层。Step 55b: Etching away the part of the metal layer exposed by the electroplating layer to form the first redistribution layer.

需要注意的是,步骤53a与53b中所述的待曝光图形是预先设定好的用于映射到光刻胶层上的图形,可以为将底片上的图形通过投影映射到光刻胶上的图形,也可以为激光直接成像机扫描到所述光刻胶上的激光直接成像图形,而根据位置数据修正待曝光图形是指:根据所述位置数据获取芯片21贴装在封装载体11上的偏移量(芯片21实际贴装的位置与预设贴装位置的偏差),再获得所述偏移量后,将所述待曝光图形进行相应的位置偏移,使得映射在所述光刻胶上的曝光图形的位置与芯片21的电极焊盘211的位置更加匹配,提高了所述重布线层相对于电极焊盘211的对准度。It should be noted that the patterns to be exposed in steps 53a and 53b are preset patterns for mapping onto the photoresist layer. The graphics can also be the laser direct imaging graphics scanned onto the photoresist by a laser direct imaging machine, and correcting the graphics to be exposed according to the position data refers to: acquiring the chip 21 mounted on the packaging carrier 11 according to the position data Offset (the deviation between the actual mounting position of the chip 21 and the preset mounting position), and after obtaining the offset, the corresponding position of the pattern to be exposed is shifted, so that the image is mapped on the photolithography The position of the exposure pattern on the glue matches the position of the electrode pad 211 of the chip 21 more closely, which improves the alignment of the redistribution layer relative to the electrode pad 211 .

采用底片绘制曝光图形,再将底片上的曝光图形通过影像转移到光刻胶上的方式工艺复杂且生产效率低。因此,为了简化工艺,提高效率,在本实施例中,采用激光直接成像机来直接形成所述曝光图形。所述待曝光图形在激光直接成像机中预先设定好的曝光图形,所述激光直接成像机根据所述位置数据对所述待曝光图形进行所修正后,并将修正后的曝光图形直接扫描成像在所述光刻胶上,以获得所述图案化的光刻胶层。Using negatives to draw exposure patterns, and then transferring the exposure patterns on the negatives to photoresists through images is complicated in process and low in production efficiency. Therefore, in order to simplify the process and improve efficiency, in this embodiment, a laser direct imaging machine is used to directly form the exposure pattern. The pattern to be exposed is preset in the laser direct imaging machine, and the laser direct imaging machine corrects the pattern to be exposed according to the position data, and directly scans the corrected exposure pattern imaging on the photoresist to obtain the patterned photoresist layer.

步骤6:步骤5中形成的重布线层中的最顶层的重布线层的表面形成焊接层(图5e中未标记),芯片21通过所述焊接层与外部相连。外部可以指其它器件或者电路印刷版等。Step 6: A solder layer (not marked in FIG. 5e ) is formed on the surface of the topmost redistribution layer among the redistribution layers formed in step 5, and the chip 21 is connected to the outside through the solder layer. External can refer to other devices or printed circuit boards, etc.

步骤7:完成步骤6后,去除封装基板112,并沿着预设定的切割道切割所述包封体31和绝缘层113,从而形成至少一颗被步骤3中所述绝缘材料包覆的芯片封装结构,如图5e所示。Step 7: After step 6 is completed, remove the packaging substrate 112, and cut the encapsulation body 31 and the insulating layer 113 along a preset cutting line, so as to form at least one insulating material covered in step 3. The chip package structure is shown in Figure 5e.

此外,本发明还提供了一种根据本发明实施例的芯片封装工艺形成的芯片封装结构,该结构可以如图5e所示。In addition, the present invention also provides a chip packaging structure formed by the chip packaging process according to the embodiment of the present invention, and the structure may be as shown in FIG. 5e.

在本发明提供的芯片封装工艺中,由于在芯片21贴装后,获取并存储芯片上的电极焊盘211的位置数据,随后根据所获得位置数据来定位芯片焊盘211所在位置来对包封体31进行开口处理,以实现芯片电极的引出。因此,在本发明提供的芯片封装工艺中,贴装芯片21时的偏差不会对封装的可靠性造成影响。例如,如图5a所示,第一行的第二块芯片21与第二行的第三块芯片21在贴装到封装载体11上时,均偏离了预定的贴装位置,则芯片21上的电极焊盘211也偏离了预先设定的位置。但是,由于在步骤2中获取的电极焊盘211的位置数据是在芯片21贴装后获取的,因此,在步骤4中对包封体31进行开口处理时,根据所述位置数据和定位标记的位置可以精准的定位处电极焊盘211的位置,从而可以将芯片21的电极端子裸露在包封体31之外,进而通过重布线层与外部电连接。由此可见,采用本发明提供的芯片封装工艺形成的芯片封装结构不会出现短路或断路的现象,因而具有较高的封装可靠性。In the chip packaging process provided by the present invention, after the chip 21 is mounted, the position data of the electrode pad 211 on the chip is obtained and stored, and then the position of the chip pad 211 is positioned according to the obtained position data to package The body 31 is opened to realize the extraction of chip electrodes. Therefore, in the chip packaging process provided by the present invention, the deviation when mounting the chip 21 will not affect the reliability of the package. For example, as shown in Figure 5a, when the second chip 21 of the first row and the third chip 21 of the second row are mounted on the packaging carrier 11, they all deviate from the predetermined mounting position, then the chip 21 The electrode pad 211 also deviates from the preset position. However, since the position data of the electrode pad 211 obtained in step 2 is obtained after the chip 21 is mounted, when the encapsulation 31 is opened in step 4, according to the position data and the positioning mark The position of the electrode pad 211 can be accurately positioned, so that the electrode terminal of the chip 21 can be exposed outside the encapsulation body 31 , and then electrically connected to the outside through the redistribution layer. It can be seen that the chip packaging structure formed by adopting the chip packaging process provided by the present invention will not be short-circuited or disconnected, and thus has high packaging reliability.

此外,在本发明提供的芯片封装工艺中,在引出芯片21的电极前,先形成用于保护芯片的包封体31,芯片21的电极通过位于包封体21上重布线层41引出与外部电连接,而不像现有的倒装工艺那样需要通过导电凸块将芯片的电极引出到引线框架上。因此,本发明提供的芯片封装工艺,无需用于到底部填充工艺,工艺简单且成本低,而且由于无需使用导电凸块与引线框架电连接,因此本发明提供的芯片封装工艺适应超密间距的电极端子的芯片封装,有利于提高封装芯片的集成度。In addition, in the chip packaging process provided by the present invention, before the electrodes of the chip 21 are drawn out, the encapsulation body 31 for protecting the chip is formed first, and the electrodes of the chip 21 are drawn out to the outside through the rewiring layer 41 on the encapsulation body 21. Electrical connection, unlike the existing flip-chip process, which needs to lead the electrodes of the chip to the lead frame through conductive bumps. Therefore, the chip packaging process provided by the present invention does not need to be used for the bottom filling process, the process is simple and the cost is low, and because there is no need to use conductive bumps to electrically connect with the lead frame, the chip packaging process provided by the present invention is suitable for ultra-fine spacing. The chip packaging of the electrode terminals is conducive to improving the integration of the packaged chips.

由上可见,在本发明提供的芯片封装工艺中,在芯片贴装到封装载体后,先获取芯片上的电极焊盘的位置数据,然后利用所获得电极焊盘的位置数据在包封所述芯片的包封体上形成重布线层,以重新排布所述芯片的电极,因此,形成的所述重布线层与芯片直接的对准度更高,且所述封装工艺简单,通过所述工艺形成的封装结构制造成本低,可靠性和集成度均高。It can be seen from the above that in the chip packaging process provided by the present invention, after the chip is mounted on the packaging carrier, first obtain the position data of the electrode pads on the chip, and then use the obtained position data of the electrode pads to package the A rewiring layer is formed on the package of the chip to rearrange the electrodes of the chip. Therefore, the rewiring layer formed has a higher degree of direct alignment with the chip, and the packaging process is simple. Through the The packaging structure formed by the process has low manufacturing cost and high reliability and integration.

依照本发明的实施例如上文所述,这些实施例并没有详尽叙述所有的细节,也不限制该发明仅为所述的具体实施例。显然,根据以上描述,可作很多的修改和变化。本说明书选取并具体描述这些实施例,是为了更好地解释本发明的原理和实际应用,从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。Embodiments according to the present invention are described above, and these embodiments do not describe all details in detail, nor do they limit the invention to only the specific embodiments described. Obviously many modifications and variations are possible in light of the above description. This description selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and its modification on the basis of the present invention. The invention is to be limited only by the claims, along with their full scope and equivalents.

Claims (21)

1. a kind of chip package process, it is characterised in that include:
At least chip piece is mounted on package carrier in active face-up mode, is provided with the active face of the chip Electrode pad;
The position data of the electrode pad is obtained, and stores the position data:
According to the position data, at least formed on the encapsulated member of the chip one layer of rewiring layer for encapsulating, with weight Newly arrange the electrode position of the chip.
2. chip package process according to claim 1, it is characterised in that ground floor institute is formed on the encapsulated member The step of stating rewiring layer includes:
Layer of metal layer is formed on the encapsulated member, the metal level at least includes layer of metal,
One layer of photoresist is formed in the layer on surface of metal,
Exposure figure is treated according to the position data to be modified so that revised exposure figure and the electrode pad Position matches, and the photoresist is exposed according to revised exposure figure, to obtain the photoresist layer of patterning,
Photoresist layer with the patterning removes the photoresist layer, with shape as mask after being etched to the metal level Into the ground floor from wiring layer.
3. chip package process according to claim 1, it is characterised in that ground floor institute is formed on the encapsulated member The step of stating rewiring layer includes:
Metal level is formed on the encapsulated member,
One layer of photoresist is formed in the layer on surface of metal,
Exposure figure is treated according to the position data to be modified so that revised exposure figure and the electrode pad Position matches, and the photoresist is exposed according to revised exposure figure, to obtain the photoresist layer of patterning,
Photoresist layer with the patterning is electroplated as mask on the metal level, to form the electrodeposited coating of patterning, Then the photoresist layer is removed,
Etch away by the metal level of the electrodeposited coating exposed part, to form the ground floor layer is rerouted.
4. the chip package process according to Claims 2 or 3, it is characterised in that
The figure to be exposed is the figure to be exposed in laser direct imaging machine, and the laser direct imaging machine is according to institute's rheme Put after data carry out correcting to the figure to be exposed, and by the direct scanning imagery of revised exposure figure in the photoetching On glue, to obtain the photoresist layer of the patterning.
5. chip package process according to claim 4, it is characterised in that also include, in top the table of layer is rerouted Face forms weld layer, and the chip is communicated with the outside by the weld layer.
6. chip package process according to claim 1, it is characterised in that also include:The encapsulated member is formed, and in shape The encapsulated member is set to expose the electrode pad into before the rewiring layer.
7. chip package process according to claim 6, it is characterised in that before the position data is obtained, and The chip attachment is formed into the encapsulated member after the package carrier, and through the visual electrode weldering of the encapsulated member Disk.
8. chip package process according to claim 7, it is characterised in that encapsulate the core with transparent insulant Piece, to form the encapsulated member.
9. chip package process according to claim 6, it is characterised in that form institute after the position data is obtained State encapsulated member.
10. the chip package process according to claim 7 or 9, it is characterised in that the root before the rewiring layer is formed Opening process is carried out to the encapsulated member according to the position data, to expose the electrode pad.
11. chip package process according to claim 1, it is characterised in that positioning mark is provided with the package carrier Note.
The position data characterizes the relatively described specifically labelled relative position of the electrode pad.
12. chip package process according to claim 5, it is characterised in that the package carrier includes base plate for packaging and position Insulating barrier on the base plate for packaging, after the weld layer is formed, removes the base plate for packaging, and along presetting Cutting Road cuts the encapsulated member and insulating barrier, to form at least one chip-packaging structure being coated by an insulating material.
13. chip package process according to claim 1, it is characterised in that the method positioned by optical scanning is obtained The position data.
14. chip package process according to claim 13, it is characterised in that the method positioned by optical scanning is obtained The step of position data, includes:
Color or shape on the profile of all chips are highlighted, the contour images of the chip are then obtained, it is finally right The contour images carry out image procossing to obtain the position data;
Or, color or shape on all electrode pad central points are highlighted, then obtain all electrode pads Central point constitute scattergram picture, finally the scattergram picture is carried out image procossing to obtain the position data.
15. chip package process according to claim 1, it is characterised in that also include, by the chip attachment in institute Before stating package carrier, electric conductor is formed on the electrode pad,
After the encapsulated member is carried out into opening process, the electric conductor is exposed by the encapsulated member.
16. chip package process according to claim 15, it is characterised in that the electric conductor be copper ball, the copper ball Contact and electrically connect with the electrode pad.
17. chip package process according to claim 1, it is characterised in that also include, by the chip attachment in institute Before stating package carrier, telltale mark described at least two is formed on the package carrier, for determining a coordinate axess,
The relatively described specifically labelled relative position of the electrode pad is position of the electrode pad in the coordinate axess.
18. chip package process according to claim 17, it is characterised in that the telltale mark is location hole or is The pad of filled circles.
19. chip package process according to claim 10, it is characterised in that the process that is open is carried out to the encapsulated member Step includes:
According to the position data and the telltale mark, the position that the electrode pad is located is oriented,
Opening process is carried out to the encapsulated member using laser beam at the position that the electrode pad is located, to remove the electricity The insulant on the pad of pole.
20. chip package process according to claim 1, it is characterised in that using laser drilling machine to the encapsulated member The opening process is carried out, the step of opening is processed is carried out to the encapsulated member to be included:
The laser drilling machine according to position data amendment hole pattern to be drilled, and according to the revised drillhole pattern pair The encapsulated member is drilled, and the revised drillhole pattern is transferred on the encapsulated member, so as in the encapsulating The opening of the exposed electrode pad is formed on body.
Chip-packaging structure manufactured by a kind of 21. chip package process according to claim 1.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336052A (en) * 2018-02-08 2018-07-27 颀中科技(苏州)有限公司 Metal wire structures, chip package device and chip package device making technics again
CN109244025A (en) * 2017-07-10 2019-01-18 中芯国际集成电路制造(上海)有限公司 A kind of manufacturing method and semiconductor devices of semiconductor devices
CN110517961A (en) * 2019-08-21 2019-11-29 上海交通大学 Reduce the embedding method and device with litho pattern position deviation of chip
CN115036251A (en) * 2022-06-07 2022-09-09 江阴长电先进封装有限公司 Alignment method of fan-out packaging wafer and fan-out packaging wafer
WO2022188859A1 (en) * 2021-03-12 2022-09-15 京东方科技集团股份有限公司 Semiconductor apparatus and manufacturing method therefor
CN115084069A (en) * 2021-03-12 2022-09-20 京东方科技集团股份有限公司 Semiconductor device and method for manufacturing the same
CN115312393A (en) * 2022-07-12 2022-11-08 天芯互联科技有限公司 Packaging method and package
US12034013B2 (en) 2020-12-21 2024-07-09 Beijing Boe Display Technology Co., Ltd. Array substrate, display panel, and electronic device
US12438136B2 (en) 2021-03-12 2025-10-07 Boe Technology Group Co., Ltd. Semiconductor apparatus and method for manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140106507A1 (en) * 2008-09-19 2014-04-17 Intel Mobile Communications GmbH System and process for fabricating semiconductor packages
CN104347434A (en) * 2013-08-06 2015-02-11 英飞凌科技股份有限公司 Method for manufacturing a chip arrangement, and a chip arrangement
CN105143985A (en) * 2013-03-29 2015-12-09 株式会社阿迪泰克工程 Lithographic device, lithographic exposure device, recording medium having program recorded thereon, and lithographic process
CN105140191A (en) * 2015-09-17 2015-12-09 中芯长电半导体(江阴)有限公司 Packaging structure and manufacturing method for redistribution leading wire layer
CN105206539A (en) * 2015-09-01 2015-12-30 华进半导体封装先导技术研发中心有限公司 Fan-out package preparation method
CN105826247A (en) * 2016-05-05 2016-08-03 上海集成电路研发中心有限公司 Chip interconnection wiring method based on fluidic self assembly technology

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140106507A1 (en) * 2008-09-19 2014-04-17 Intel Mobile Communications GmbH System and process for fabricating semiconductor packages
CN105143985A (en) * 2013-03-29 2015-12-09 株式会社阿迪泰克工程 Lithographic device, lithographic exposure device, recording medium having program recorded thereon, and lithographic process
CN104347434A (en) * 2013-08-06 2015-02-11 英飞凌科技股份有限公司 Method for manufacturing a chip arrangement, and a chip arrangement
CN105206539A (en) * 2015-09-01 2015-12-30 华进半导体封装先导技术研发中心有限公司 Fan-out package preparation method
CN105140191A (en) * 2015-09-17 2015-12-09 中芯长电半导体(江阴)有限公司 Packaging structure and manufacturing method for redistribution leading wire layer
CN105826247A (en) * 2016-05-05 2016-08-03 上海集成电路研发中心有限公司 Chip interconnection wiring method based on fluidic self assembly technology

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244025A (en) * 2017-07-10 2019-01-18 中芯国际集成电路制造(上海)有限公司 A kind of manufacturing method and semiconductor devices of semiconductor devices
CN108336052A (en) * 2018-02-08 2018-07-27 颀中科技(苏州)有限公司 Metal wire structures, chip package device and chip package device making technics again
CN110517961A (en) * 2019-08-21 2019-11-29 上海交通大学 Reduce the embedding method and device with litho pattern position deviation of chip
CN110517961B (en) * 2019-08-21 2021-08-27 上海交通大学 Method and device for reducing position deviation of chip embedding and photoetching pattern
US12034013B2 (en) 2020-12-21 2024-07-09 Beijing Boe Display Technology Co., Ltd. Array substrate, display panel, and electronic device
WO2022188859A1 (en) * 2021-03-12 2022-09-15 京东方科技集团股份有限公司 Semiconductor apparatus and manufacturing method therefor
CN115084069A (en) * 2021-03-12 2022-09-20 京东方科技集团股份有限公司 Semiconductor device and method for manufacturing the same
US12278243B2 (en) 2021-03-12 2025-04-15 Boe Technology Group Co., Ltd. Semiconductor apparatus having expansion wires for electrically connecting chips
US12438136B2 (en) 2021-03-12 2025-10-07 Boe Technology Group Co., Ltd. Semiconductor apparatus and method for manufacturing the same
CN115036251A (en) * 2022-06-07 2022-09-09 江阴长电先进封装有限公司 Alignment method of fan-out packaging wafer and fan-out packaging wafer
CN115036251B (en) * 2022-06-07 2024-07-19 江阴长电先进封装有限公司 Fan-out package wafer alignment method and fan-out package wafer
CN115312393A (en) * 2022-07-12 2022-11-08 天芯互联科技有限公司 Packaging method and package

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