CN106597813B - The patterned method of quantum dot light emitting layer, quantum stippling film and display device - Google Patents
The patterned method of quantum dot light emitting layer, quantum stippling film and display device Download PDFInfo
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- CN106597813B CN106597813B CN201611200363.5A CN201611200363A CN106597813B CN 106597813 B CN106597813 B CN 106597813B CN 201611200363 A CN201611200363 A CN 201611200363A CN 106597813 B CN106597813 B CN 106597813B
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- quantum dot
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- light emitting
- emitting layer
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004925 denaturation Methods 0.000 claims description 6
- 230000036425 denaturation Effects 0.000 claims description 6
- 238000006044 Wolff rearrangement reaction Methods 0.000 claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000012954 diazonium Substances 0.000 description 2
- -1 diazonium ketone Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2045—Exposure; Apparatus therefor using originals with apertures, e.g. stencil exposure masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of patterned methods of quantum dot light emitting layer, including step：The arrangement function quantum dot on substrate, forms quantum dot layer；Development is exposed to the quantum dot layer, obtains patterned quantum dot light emitting layer on the substrate；Wherein, the function quantum dot is formed by photosensitive group coated quantum dots.The patterned method and process of quantum dot light emitting layer according to the present invention is simple, is convenient for the patterned quantum dot light emitting layer of volume production.The invention also discloses it is a kind of include the quantum stippling film of the quantum dot light emitting layer prepared according to the above method and display device with the quantum stippling film.
Description
Technical field
The invention belongs to technical field of flat panel display, in particular, be related to a kind of patterned method of quantum dot light emitting layer,
Include the quantum stippling film of the quantum dot light emitting layer prepared according to this method and the display dress with the quantum stippling film
It sets.
Background technology
Quantum dot light emitting device because its with wide colour gamut, low cost solwution method prepare, luminescence spectrum is adjustable and illumination
The advantages such as stability inferior is good and widely paid close attention to, not only there is the display performance to compare favourably with OLED luminescent devices, and
And there is the lower advantage of manufacturing cost.Therefore, quantum dot light emitting device is likely to substitution OLED luminescent devices and becomes next
For core display device.
In the manufacturing process of quantum dot light emitting device, the patterning of quantum dot light emitting layer is one of which critical process.
Currently, the graphical of quantum dot light emitting layer is realized generally by printing or transfer printing process, still, in printing or transfer printing process
In, generally have that preparation process is cumbersome, prepares slow problem.The problems of these prior arts amount of limiting
The volume production development of son point luminescent device.
Invention content
To solve the above-mentioned problems of the prior art, the present invention provides a kind of patterned sides of quantum dot light emitting layer
Method, this method is simple for process, is convenient for the patterned quantum dot light emitting layer of volume production.
In order to reach foregoing invention purpose, present invention employs the following technical solutions：
A kind of patterned method of quantum dot light emitting layer, including step：The arrangement function quantum dot on substrate, forms quantum
Point layer；Development is exposed to the quantum dot layer, obtains patterned quantum dot light emitting layer on the substrate；Wherein, institute
Stating function quantum dot is formed by photosensitive group coated quantum dots.
Further, the photosensitive group is diazo-ketones compound.
Further, the photosensitive group is the diazonium ketone derivatives with phenyl ring.
Further, the photosensitive group has the chemical formula as shown in formula (1)：
Wherein, the R1Selected from R2-(CH2)n-SO2-、R2-(CH2)n-CO-、R2-(CH2)nIn any one；The R2
Selected from NH2-、SH-、PH2, O=PH2-、SH-CH2CH2Any one in-NH-；The n is positive integer.
Further, the value range of the n is 7≤n≤18.
Further, the quantum dot appointing in Au quantum dots, CdSe quantum dot, InP quantum dots, CdTe quantum
Meaning is a kind of.
Further, further include step before being exposed development to the quantum dot layer：Mask plate is arranged described
Above quantum dot layer；Wherein, the mask plate has the through-hole that the shape with the patterned quantum dot light emitting layer matches.
Further, the specific steps for development being exposed to the quantum dot layer include：The quantum dot layer is carried out
Wolff rearrangement reactions occur for the function quantum dot of exposure, the through-hole corresponding position, become being denaturalized quantum dot；It will be remaining
The function quantum dot and the denaturation quantum dot are contacted with developer solution, and the denaturation quantum dot is dissolved in the developer solution, in institute
It states and obtains the patterned quantum dot light emitting layer on substrate.
Another object of the present invention is to provide a kind of quantum stippling films comprising as above any quantum dot light emitting
The quantum dot light emitting layer that the method for pattern layers is prepared.
Another object of the present invention, which also resides in, provides a kind of display device comprising quantum stippling film as described above.
The present invention is by the way that in common quantum dot outer cladding photosensitive group, which can occur under illumination condition
Wolff rearrangement reactions, to realize development；This method can realize quantum dot light emitting layer by simple exposure imaging as a result,
Patterning, to avoid in the patterned method of general quantum dot light emitting layer in the prior art using printing, transfer etc. works
The problems such as speed caused by skill is slow, complex process.
Description of the drawings
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing：
Fig. 1 is the step flow chart of the patterned method of quantum dot light emitting layer according to an embodiment of the invention；
Fig. 2-Fig. 5 is the process flow chart of the patterned method of quantum dot light emitting layer according to an embodiment of the invention.
Specific implementation mode
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, for the sake of clarity, element can be exaggerated
Shape and size, and identical label will be used to indicate same or analogous element always.
Embodiment 1
Fig. 1 is the step flow chart of the according to an embodiment of the invention 1 patterned method of quantum dot light emitting layer.
Referring to Fig.1, specifically comprised the following steps according to the patterned method of the quantum dot light emitting layer of the present embodiment：
S1, arrange function quantum dot 2a on substrate 1, forms quantum dot layer 2；As shown in Figure 2.
Specifically, function quantum dot 2a is formed by photosensitive group coated quantum dots, and quantum dot can be such as Au
Quantum dot, CdSe quantum dot, InP quantum dots, CdTe quantum etc..Optionally, which is glass substrate.
More specifically, photosensitive group is diazo-ketones compound, and function quantum dot 2a can be under illumination condition as a result,
Wolff rearrangement reactions occur.
Further, photosensitive group is the diazonium ketone derivatives with phenyl ring, in this way, the conjugated structure on phenyl ring makes this
Photosensitive group has certain optical characteristics, can be preferably applied in subsequent exposure.
In the present embodiment, photosensitive group has the chemical formula as shown in (1)：
Wherein, R1Selected from R2-(CH2)n-SO2-、R2-(CH2)n-CO-、R2-(CH2)nIn any one；R2It is selected from
NH2-、SH-、PH2, O=PH2-、SH-CH2CH2Any one in-NH-；N is positive integer, preferably the value of 7≤n≤18
Range.
S2, mask plate 3 is arranged above quantum dot layer 2, as shown in Figure 3.
The mask plate 3 has the through-hole 31 that the shape with pre-prepared patterned quantum dot light emitting layer matches, in this way,
Quantum dot layer can be realized by subsequent exposure imaging and be patterned.
S3, development is exposed to quantum dot layer 2, obtains patterned quantum dot light emitting layer 4 on substrate 1；Such as Fig. 4-
Shown in Fig. 5.
Specifically, quantum dot layer 2 is exposed, the function quantum dot of 31 corresponding position of through-hole on mask plate 3
Wolff rearrangement reactions occur for 2a, become being denaturalized quantum dot 2b, as shown in Figure 4；By remaining function quantum dot 2a and denaturation quantum
Point 2b is contacted with developer solution, and denaturation quantum dot 2b is dissolved in developer solution, i.e., obtains patterned quantum dot light emitting layer 4 on substrate 1.
After obtaining patterned quantum dot light emitting layer 4, mask plate 3 is removed, as shown in Figure 5.
By above-mentioned steps S1-S3, it can be seen that had according to the patterned method of the quantum dot light emitting layer of the present embodiment
Feature simple for process, and only need by simply arrange-patterned process can be realized in exposure imaging, simple technique is more
It is suitable for carrying out volume production.
Embodiment 2
A kind of quantum stippling film is present embodiments provided, in the quantum stippling film according to included quantum dot light emitting layer
The quantum dot light emitting layer that the patterned method of quantum dot light emitting layer described in embodiment 1 prepares.
Embodiment 3
A kind of display device is present embodiments provided, which includes the quantum stippling film in embodiment 2.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (6)
1. a kind of patterned method of quantum dot light emitting layer, which is characterized in that including step：
The arrangement function quantum dot on substrate, forms quantum dot layer；
Development is exposed to the quantum dot layer, obtains patterned quantum dot light emitting layer on the substrate；
Wherein, the function quantum dot is formed by photosensitive group coated quantum dots；
The photosensitive group has the chemical formula as shown in formula (1)：
Wherein, the R1Selected from R2-(CH2)n-SO2-、R2-(CH2)n-CO-、R2-(CH2)nIn any one；The R2It is selected from
NH2-、SH-、PH2, O=PH2-、SH-CH2CH2Any one in-NH-；The value range of the n is 7≤n≤18.
2. according to the method described in claim 1, it is characterized in that, the quantum dot be selected from Au quantum dots, CdSe quantum dot,
Any one in InP quantum dots, CdTe quantum.
3. according to the method described in claim 2, it is characterized in that, before being exposed development to the quantum dot layer, also wrap
Include step：
Mask plate is arranged above the quantum dot layer；Wherein, the mask plate has sends out with the patterned quantum dot
The through-hole that the shape of photosphere matches.
4. according to the method described in claim 3, it is characterized in that, being exposed the specific steps of development to the quantum dot layer
Including：
The quantum dot layer is exposed, wolff rearrangement reactions occur for the function quantum dot of the through-hole corresponding position, become
To be denaturalized quantum dot；
The remaining function quantum dot and the denaturation quantum dot are contacted with developer solution, the denaturation quantum dot is dissolved in described
Developer solution obtains the patterned quantum dot light emitting layer on the substrate.
5. a kind of quantum stippling film, which is characterized in that include the quantum dot light emitting pattern layers as described in claim 1-4 is any
The quantum dot light emitting layer that is prepared of method.
6. a kind of display device, which is characterized in that including quantum stippling film as claimed in claim 5.
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| CN106597813B true CN106597813B (en) | 2018-08-14 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560206B (en) * | 2018-10-18 | 2020-07-14 | 南昌大学 | Colloidal quantum dot film patterning method |
| CN109343267B (en) * | 2018-11-30 | 2021-02-26 | 武汉华星光电技术有限公司 | Quantum dot color filter substrate and preparation method thereof |
| CN113903873B (en) * | 2020-06-22 | 2023-04-07 | 京东方科技集团股份有限公司 | Quantum dot light-emitting panel, display device and manufacturing method |
| CN111900269A (en) * | 2020-07-15 | 2020-11-06 | 京东方科技集团股份有限公司 | Quantum dot layer patterning method and quantum dot light-emitting device manufacturing method |
| CN112234155B (en) * | 2020-10-15 | 2024-04-19 | 京东方科技集团股份有限公司 | Quantum dot patterning method, manufacturing method of display panel and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1717626A (en) * | 2002-11-27 | 2006-01-04 | Az电子材料（日本）株式会社 | Pattern forming method using ultra-high heat-resistant positive-type photosensitive composition |
| CN101253449A (en) * | 2005-08-30 | 2008-08-27 | 日立化成工业株式会社 | Photosensitive resin composition and photosensitive component |
| CN103728837A (en) * | 2013-12-30 | 2014-04-16 | 京东方科技集团股份有限公司 | Photosensitive resin combination and method of preparing quantum dot pattern from photosensitive resin combination |
| CN104391428A (en) * | 2014-11-20 | 2015-03-04 | 京东方科技集团股份有限公司 | Photosensitizer containing diazo group, photoresist composition and preparation methods of photosensitizer and photoresist composition |
| CN105552241A (en) * | 2016-01-13 | 2016-05-04 | 京东方科技集团股份有限公司 | Cross-linkable quantum dot and preparation method thereof, array substrate and preparation method of array substrate |
-
2016
- 2016-12-22 CN CN201611200363.5A patent/CN106597813B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1717626A (en) * | 2002-11-27 | 2006-01-04 | Az电子材料（日本）株式会社 | Pattern forming method using ultra-high heat-resistant positive-type photosensitive composition |
| CN101253449A (en) * | 2005-08-30 | 2008-08-27 | 日立化成工业株式会社 | Photosensitive resin composition and photosensitive component |
| CN103728837A (en) * | 2013-12-30 | 2014-04-16 | 京东方科技集团股份有限公司 | Photosensitive resin combination and method of preparing quantum dot pattern from photosensitive resin combination |
| CN104391428A (en) * | 2014-11-20 | 2015-03-04 | 京东方科技集团股份有限公司 | Photosensitizer containing diazo group, photoresist composition and preparation methods of photosensitizer and photoresist composition |
| CN105552241A (en) * | 2016-01-13 | 2016-05-04 | 京东方科技集团股份有限公司 | Cross-linkable quantum dot and preparation method thereof, array substrate and preparation method of array substrate |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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