CN106556803B - A kind of mode of resonance Magnetic Sensor - Google Patents
A kind of mode of resonance Magnetic Sensor Download PDFInfo
- Publication number
- CN106556803B CN106556803B CN201510615695.9A CN201510615695A CN106556803B CN 106556803 B CN106556803 B CN 106556803B CN 201510615695 A CN201510615695 A CN 201510615695A CN 106556803 B CN106556803 B CN 106556803B
- Authority
- CN
- China
- Prior art keywords
- piezoelectric
- tuning fork
- phase
- beam structure
- detection unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000010355 oscillation Effects 0.000 claims abstract description 19
- 230000003068 static effect Effects 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 12
- 239000002131 composite material Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 230000009471 action Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005690 magnetoelectric effect Effects 0.000 description 3
- 241000238366 Cephalopoda Species 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种谐振型磁传感器，特别是采用磁致伸缩材料构成三梁音叉谐振器的无线圈磁传感器。The invention relates to a resonance type magnetic sensor, in particular to a coilless magnetic sensor which adopts magnetostrictive material to form a three-beam tuning fork resonator.
背景技术Background technique
传统的磁传感器种类主要有超导量子干涉磁强计(SQUID)、霍尔传感器、磁通门磁传感器、磁敏二极管磁传感器、磁敏三极管磁传感器、核磁共振磁传感器、光泵式磁传感器、巨磁阻抗传感器、电磁感应式磁传感器等。SQUID是最高精度的低频磁传感器，但其需要在低温下工作，且体积大、价格昂贵；磁通门磁传感器、核磁共振磁传感器和光泵式磁传感器的结构复杂，且笨重、价格昂贵、功耗高；巨磁阻抗传感器的灵敏度很高，但是需要精密的电桥电路和有源激励工作；电磁感应式磁传感器的精度高，但体积大，不适用于探测缓慢变化磁场。The traditional magnetic sensor types mainly include superconducting quantum interference magnetometer (SQUID), Hall sensor, fluxgate magnetic sensor, magnetic diode magnetic sensor, magnetic triode magnetic sensor, nuclear magnetic resonance magnetic sensor, optical pump magnetic sensor. , giant magneto-impedance sensor, electromagnetic induction magnetic sensor, etc. SQUID is the highest precision low-frequency magnetic sensor, but it needs to work at low temperature, and is bulky and expensive. High power consumption; giant magneto-impedance sensor has high sensitivity, but requires precise bridge circuit and active excitation work; electromagnetic induction magnetic sensor has high precision, but is large in size, and is not suitable for detecting slowly changing magnetic fields.
磁致伸缩材料与压电材料，具有磁、电、力等物理场耦合效应，能够分别实现磁-机和电-机转换和逆向转换。将这两种材料叠层复合，还会由于复合材料的“乘积效应”产生新特性——磁电效应。目前，业内人士将磁致伸缩材料与压电材料复合构成复合磁电换能单元，利用其“乘积效应”产生的磁电效应设计高灵敏度的磁传感器，例如文献Dong等报道的基于复合磁电换能单元的磁传感器，其灵敏度可达10-11T(Shuxiang Dong,Jie-Fang Li,and D.Viehland,Ultrahigh magnetic field sensitivity in laminates of TERFENOL-D and Pb(Mg1/3Nb2/3O3–bUltO3crystals,Appl.Phys.Lett.,vol.83,no.11,2003)。但是由于压电材料层的电容特性，“乘积效应”产生的磁电效应具有明显的高通特性，导致传感器低频磁电响应性能较差且不能直接探测静态磁场(Shuxiang Dong,Junyi Zhai,ZhengpingXing,Jie-Fang Li,and D.Viehland，Extremely low frequency response ofmagnetoelectric multilayer composites,Appl.Phys.Lett.86,102901,2005)。一些学者在复合磁电换能单元外部绕制线圈来产生磁激励磁场，在激励磁场作用下，利用复合磁电换能单元的磁电输出随磁场变化的特性来进行静态和准静态磁场探测，从而克服复合磁电换能单元低频磁电响应性能较差的缺点。但是，这种线圈激励的方式又带来新的问题，例如线圈激励会产生电磁干扰、焦耳热等问题，从而导致传感器功耗大、稳定性差，还有可能对其它电子设备造成电磁干扰。德国科学家(S.Marauska,R.Jahns,C.Kirchhof,M.Claus,E.Quandt,R.B.Wagner,Highly sensitive wafer-level packaged MEMSmagnetic field sensor based on magnetoelectric composites,Sensors andActuators A 189,2013,321–327；R.Jahns,S.Zabel,S.Marauska,B.Gojdka,B.Wagner,R.R.Adelung,and F.Faupel,Microelectromechanical magnetic field sensorbased onΔE effect,Applied Physics Letters 105,052414,2014)设计了磁致伸缩/压电复合的MEMS谐振磁传感器，利用磁场作用下磁致伸缩材料弹性模量变化(即ΔE效应)的特性，引起磁致伸缩/压电复合的MEMS谐振器输出频率变化来探测静态或准静态磁场。这种方法不必使用线圈，电路构建简单，但是其传感器谐振单元采用悬臂梁结构，且磁致伸缩与压电叠层复合的方式降低了可探测到的灵敏度。可探测灵敏度降低的原因如下：在层间理想耦合条件下，叠层复合结构的平均弹性模量为：E＝nmEm+(1-nm)Ep，其中nm是磁致伸缩层所占复合结构的体积比，Em和Ep分别是磁致伸缩层合压电层的弹性模量，由此在磁场作用下叠层结构的平均弹性模量变化量为ΔE＝nmΔEm，因此说频率响应的灵敏度被降低了；另一方面，由于悬臂梁结构固定端存在振动耦合损耗，悬臂梁谐振器的品质因数(Q值)不够高，这限制了磁场频率变化量的高精度探测。Magnetostrictive materials and piezoelectric materials have physical field coupling effects such as magnetism, electricity, and force, and can realize magneto-mechanical and electro-mechanical conversion and reverse conversion, respectively. Laminating these two materials will also produce a new characteristic - the magnetoelectric effect due to the "product effect" of the composite material. At present, people in the industry combine magnetostrictive materials and piezoelectric materials to form a composite magnetoelectric transducer unit, and use the magnetoelectric effect generated by its "product effect" to design high-sensitivity magnetic sensors, such as those reported by Dong et al. Magnetic sensor of transduction unit with sensitivity up to 10 -11 T (Shuxiang Dong, Jie-Fang Li, and D. Viehland, Ultrahigh magnetic field sensitivity in laminates of TERFENOL-D and Pb (Mg 1/3 Nb 2/3 O 3 –bUltO 3 crystals,Appl.Phys.Lett.,vol.83,no.11,2003). However, due to the capacitive properties of the piezoelectric material layer, the magnetoelectric effect generated by the “product effect” has obvious high-pass characteristics, As a result, the sensor has poor low-frequency magnetoelectric response performance and cannot directly detect static magnetic fields (Shuxiang Dong, Junyi Zhai, ZhengpingXing, Jie-Fang Li, and D.Viehland, Extremely low frequency response of magnetoelectric multilayer composites, Appl.Phys.Lett.86, 102901, 2005). Some scholars wound a coil outside the composite magnetoelectric transducer unit to generate a magnetic excitation magnetic field, and under the action of the excitation magnetic field, they used the characteristics of the magnetoelectric output of the composite magnetoelectric transducer unit to change with the magnetic field to perform static and magnetic fields. Quasi-static magnetic field detection, thus overcoming the disadvantage of poor low-frequency magnetoelectric response performance of the composite magnetoelectric transducer unit. However, this method of coil excitation brings new problems, such as electromagnetic interference and Joule heating caused by coil excitation. , resulting in high power consumption of the sensor, poor stability, and possibly electromagnetic interference to other electronic equipment. German scientists (S.Marauska, R.Jahns, C.Kirchhof, M.Claus, E.Quandt, R. B.Wagner,Highly sensitive wafer-level packaged MEMSmagnetic field sensor based on magnetoelectric composites,Sensors and Actuators A 189,2013,321–327; R.Jahns,S.Zabel,S.Marauska,B.Gojdka,B.Wagner,R . R. Adelung, and F. Faupel, Microelectromechanical magnetic field sensor based on ΔE effect, Applied Physics Letters 105, 052414, 2014) designed a magnetostrictive/piezoelectric composite MEMS resonant magnetic sensor, using the elastic mode of magnetostrictive materials under the action of a magnetic field Quantitative variation (ie, the ΔE effect), which induces a change in the output frequency of the magnetostrictive/piezoelectric composite MEMS resonator to detect static or quasi-static magnetic fields. This method does not need to use a coil, and the circuit construction is simple, but its sensor resonance unit adopts a cantilever beam structure, and the combination of magnetostriction and piezoelectric stack reduces the detectable sensitivity. The reason for the decrease in detectable sensitivity is as follows: Under ideal coupling conditions between layers, the average elastic modulus of the laminated composite structure is: E =nm E m +(1-nm )E p , where nm is the magnetostriction The volume ratio of the layer occupied by the composite structure, E m and E p are the elastic moduli of the magnetostrictive laminated piezoelectric layer, respectively, so the average elastic modulus change of the laminated structure under the action of the magnetic field is ΔE=n m ΔE m , so the sensitivity of the frequency response is reduced; on the other hand, due to the vibration coupling loss at the fixed end of the cantilever beam structure, the quality factor (Q value) of the cantilever beam resonator is not high enough, which limits the frequency variation of the magnetic field. High precision detection.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提出一种谐振型磁传感器，可用于静态和准静态磁场的高灵敏度探测，且体积小、成本低。The purpose of the present invention is to provide a resonant magnetic sensor, which can be used for high-sensitivity detection of static and quasi-static magnetic fields, and is small in size and low in cost.
为了解决上述技术问题，本发明提供一种谐振型磁传感器，包括三梁结构谐振音叉、压电驱动单元、压电检测单元以及锁相振荡电路；所述三梁结构谐振音叉为一体化片状结构的谐振器，由磁致伸缩材料制作而成，具有三个双端固定的振动梁；压电驱动单元和压电检测单元均为具有上电极和下电极的压电材料薄膜，压电驱动单元和压电检测单元分别复合在所述三梁结构谐振音叉的中间梁的两端，且下电极均接地；压电驱动单元和压电检测单元分别通过其上电极与锁相振荡电路的输入端和输出端连接；锁相振荡电路用于激励和维持三梁结构谐振音叉在优化振动模态下振荡，并输出代表三梁音叉谐振频率的电信号；三梁结构谐振音叉在优化振动模态下振荡时，其中间梁的振动方向与两个侧梁的振动方向相反。由于磁致伸缩材料的弹性模量随静态磁场变化，三梁结构谐振音叉的谐振频率也随磁场变化，因此本发明可用于静态和准静态磁场的高灵敏度探测。In order to solve the above technical problems, the present invention provides a resonant magnetic sensor, including a three-beam structure resonance tuning fork, a piezoelectric driving unit, a piezoelectric detection unit and a phase-locked oscillation circuit; the three-beam structure resonance tuning fork is an integrated sheet-like The resonator of the structure is made of magnetostrictive material and has three vibrating beams fixed at both ends; the piezoelectric drive unit and the piezoelectric detection unit are both piezoelectric material films with upper electrodes and lower electrodes. The unit and the piezoelectric detection unit are respectively compounded at both ends of the middle beam of the three-beam structure resonance tuning fork, and the lower electrodes are grounded; The terminal is connected to the output terminal; the phase-locked oscillation circuit is used to excite and maintain the three-beam structure resonant tuning fork to oscillate in the optimized vibration mode, and output an electrical signal representing the resonance frequency of the three-beam tuning fork; the three-beam structure resonant tuning fork is in the optimized vibration mode During the downward oscillation, the vibration direction of the middle beam is opposite to the vibration direction of the two side beams. Since the elastic modulus of the magnetostrictive material changes with the static magnetic field, and the resonance frequency of the three-beam resonant tuning fork also changes with the magnetic field, the present invention can be used for high-sensitivity detection of static and quasi-static magnetic fields.
所述压电驱动单元和压电检测单元的下电极均连接有下电极引出电极，上电极均连接有上电极引出电极。The lower electrodes of the piezoelectric driving unit and the piezoelectric detection unit are both connected with lower electrode lead-out electrodes, and the upper electrodes are all connected with upper electrode lead-out electrodes.
作为一种优选方案，锁相振荡电路包括电荷放大器、移相器和第二级放大器，压电检测单元将检测到的三梁结构谐振音叉的振动信号传输给电荷放大器的输入端，电荷放大器的放大输出信号经移相器移相后由第二级放大器进行二次放大，放大后输出的信号作为驱动信号传输给压电驱动单元，驱动压电单元振动，压电单元的振动进一步驱动三梁结构谐振音叉在所述优化振动模态下振荡；移相器输出端引出一路信号，作为磁传感器的磁场测量的输出信号，通过检测谐振频率的值来检测磁场。As a preferred solution, the phase-locked oscillator circuit includes a charge amplifier, a phase shifter and a second-stage amplifier, and the piezoelectric detection unit transmits the detected vibration signal of the three-beam resonant tuning fork to the input end of the charge amplifier. The amplified output signal is phase-shifted by the phase shifter and then amplified by the second-stage amplifier. The amplified output signal is transmitted to the piezoelectric drive unit as a driving signal to drive the piezoelectric unit to vibrate, and the vibration of the piezoelectric unit further drives the three beams. The structural resonance tuning fork oscillates in the optimized vibration mode; the output end of the phase shifter leads out a signal as the output signal of the magnetic field measurement of the magnetic sensor, and the magnetic field is detected by detecting the value of the resonance frequency.
本发明与现有技术相比，其显著优点在于，本发明所述的磁传感器利用磁致伸缩材料的ΔE效应(即磁致伸缩材料弹性模量随磁场变化特性)引起磁致伸缩三梁结构音叉谐振频率变化的特性检测磁场，使用本发明磁传感器进行静态和准静态磁场探测时无需采用线圈激励和感应，克服了传统采用线圈方法功耗大、产生焦耳热和电磁干扰等缺点；三梁结构谐振音叉比悬臂梁结构的品质因数更高，有利于提高探测灵敏度；三梁结构谐振音叉可以采用激光微加工的方法切割现有的磁致伸缩材料薄膜实现，也可以采用物理溅射的方法制备，能够以微机电系统(MEMS)的方式实现，使得磁传感器探头成本低、体积小。Compared with the prior art, the present invention has a significant advantage in that the magnetic sensor of the present invention utilizes the ΔE effect of the magnetostrictive material (that is, the change of the elastic modulus of the magnetostrictive material with the magnetic field) to cause the magnetostrictive three-beam structure The characteristic of the tuning fork resonant frequency changes to detect the magnetic field, and the magnetic sensor of the invention does not need to use coil excitation and induction when using the magnetic sensor of the invention for static and quasi-static magnetic field detection, and overcomes the traditional method of using coils. The quality factor of the structural resonance tuning fork is higher than that of the cantilever beam structure, which is beneficial to improve the detection sensitivity; the three-beam structure resonance tuning fork can be realized by cutting the existing magnetostrictive material film by the method of laser micromachining, or by the method of physical sputtering. The preparation can be realized in the form of a micro-electromechanical system (MEMS), so that the magnetic sensor probe is low in cost and small in size.
附图说明Description of drawings
图1是本发明所述谐振型磁传感器的一种实施方式示意图；FIG. 1 is a schematic diagram of an embodiment of the resonant magnetic sensor according to the present invention;
图2是本发明中三梁结构谐振音叉的优化振动模态示意图；Fig. 2 is the optimized vibration mode schematic diagram of the three-beam structure resonance tuning fork in the present invention;
图3是本发明中锁相振荡电路的一种实施方式示意图。FIG. 3 is a schematic diagram of an embodiment of the phase-locked oscillator circuit in the present invention.
具体实施方式Detailed ways
容易理解，依据本发明的技术方案，在不变更本发明的实质精神的情况下，本领域的一般技术人员可以想象出本发明谐振型磁传感器的多种实施方式。因此，以下具体实施方式和附图仅是对本发明的技术方案的示例性说明，而不应当视为本发明的全部或者视为对本发明技术方案的限制或限定。It is easy to understand that according to the technical solutions of the present invention, without changing the essential spirit of the present invention, those skilled in the art can imagine various embodiments of the resonant magnetic sensor of the present invention. Therefore, the following specific embodiments and accompanying drawings are only exemplary descriptions of the technical solutions of the present invention, and should not be regarded as the whole of the present invention or as limitations or restrictions on the technical solutions of the present invention.
结合图1，本实施例所示谐振型磁传感器，包括三梁结构谐振音叉1、压电驱动单元2-1、压电检测单元2-2以及锁相振荡电路6构成；1, the resonant magnetic sensor shown in this embodiment includes a three-beam structure resonant tuning fork 1, a piezoelectric drive unit 2-1, a piezoelectric detection unit 2-2, and a phase-locked oscillator circuit 6;
三梁结构谐振音叉1为一体化片状结构的谐振器，由磁致伸缩材料制作而成。三梁结构谐振音叉1具有三个双端固定的振动梁，如图1中的中间梁1-1以及两个侧梁1-2，中间梁1-1的宽度近似为侧梁1-2宽度的两倍。根据有限元方法分析，在如图2所示的优化振动模态下，中间梁1-1的振动方向与两个侧梁1-2的振动方向相反，从而中间梁1-1和两个侧梁1-2的弯矩和剪切力抵消，极大的降低了此三个双端固定的振动梁在固定端的耦合振荡损耗，提高了谐振器的品质因数。The three-beam structure resonance tuning fork 1 is a resonator with an integrated sheet-like structure, which is made of magnetostrictive materials. Three-beam structure resonance tuning fork 1 has three vibrating beams fixed at both ends, such as the middle beam 1-1 and two side beams 1-2 in FIG. 1 , the width of the middle beam 1-1 is approximately the width of the side beams 1-2 twice. According to the finite element method analysis, under the optimized vibration mode shown in Figure 2, the vibration direction of the middle beam 1-1 is opposite to the vibration direction of the two side beams 1-2, so that the middle beam 1-1 and the two side beams The bending moment and shear force of beams 1-2 are cancelled, which greatly reduces the coupling oscillation loss of the three double-ended fixed vibration beams at the fixed end, and improves the quality factor of the resonator.
压电驱动单元2-1和压电检测单元2-2均为具有上电极和下电极的压电材料薄膜，压电驱动单元2-1和压电检测单元2-2分别通过其下电极贴合复合在三梁结构谐振音叉1的中间梁1-1的两个固定端，且下电极均接地；压电驱动单元2-1和压电检测单元2-2分别通过其电极与锁相振荡电路的输入端和输出端连接。The piezoelectric drive unit 2-1 and the piezoelectric detection unit 2-2 are both piezoelectric material films with upper electrodes and lower electrodes. The two fixed ends of the middle beam 1-1 of the three-beam resonant tuning fork 1 are combined together, and the lower electrodes are grounded; The input terminal and the output terminal of the circuit are connected.
锁相振荡电路用于激励和维持谐振器在优化振动模态下振荡，并输出谐振频率信号。The phase-locked oscillator circuit is used to excite and maintain the resonator to oscillate in the optimized vibration mode, and output the resonant frequency signal.
为了便于引线连接，压电驱动单元2-1和压电检测单元2-2的下电极均连接有下电极引出电极3，上电极均连接有上电极引出电极4，引出电极与其焊接的引线接地或接锁相振荡电路。压电检测单元2-2和压电驱动单元2-1的电极分别通过引线连接到输入到锁相振荡电路输入端和输出端。In order to facilitate the connection of the leads, the lower electrodes of the piezoelectric driving unit 2-1 and the piezoelectric detection unit 2-2 are connected with the lower electrode lead-out electrodes 3, and the upper electrodes are connected with the upper electrode lead-out electrodes 4, and the lead electrodes are grounded with the leads welded to them. Or connect to the phase-locked oscillator circuit. The electrodes of the piezoelectric detecting unit 2-2 and the piezoelectric driving unit 2-1 are respectively connected to the input terminal and the output terminal of the phase-locked oscillation circuit through lead wires.
图3是锁相振荡电路6的一种实现方法，主要由电荷放大器7、移相器8和第二级放大器9组成，锁相振荡电路6与三梁结构谐振音叉1共同构成自激振荡，产生频率输出。压电检测单元2-2将检测到的三梁结构谐振音叉1的振动信号通过上电极传输给电荷放大器7的输入端，电荷放大器7的放大输出信号经移相器8移相后再由第二级放大器9进行二次放大，放大后输出的驱动信号传输给压电驱动单元2-1，驱动压电单元2-1振动，压电单元2-1的振动进一步驱动三梁结构谐振音叉1在优化振动模态下振荡。这种闭环反馈的控制方式，可以使三梁结构音叉谐振器维持在选定的振动模态振荡。同时在移相器8输出端引出一路信号，即可作为谐振磁传感器的频率输出信号，通过检测磁场频率变化即可获得磁场的量值，完成磁场测量。Fig. 3 is a realization method of the phase-locked oscillation circuit 6, which is mainly composed of a charge amplifier 7, a phase shifter 8 and a second-stage amplifier 9. The phase-locked oscillation circuit 6 and the three-beam structure resonance tuning fork 1 together form self-excited oscillation, Generate frequency output. The piezoelectric detection unit 2-2 transmits the detected vibration signal of the three-beam structure resonant tuning fork 1 to the input end of the charge amplifier 7 through the upper electrode, and the amplified output signal of the charge amplifier 7 is phase-shifted by the phase shifter 8 and then sent to the input end of the charge amplifier 7. The secondary amplifier 9 performs secondary amplification, and the amplified output drive signal is transmitted to the piezoelectric drive unit 2-1, which drives the piezoelectric unit 2-1 to vibrate, and the vibration of the piezoelectric unit 2-1 further drives the three-beam structure resonance tuning fork 1 Oscillate in an optimized vibration mode. This closed-loop feedback control can make the three-beam tuning fork resonator oscillate in a selected vibration mode. At the same time, a signal is drawn from the output end of the phase shifter 8, which can be used as the frequency output signal of the resonant magnetic sensor.
制备三梁结构谐振音叉1的材料是具有ΔE效应的磁致伸缩材料，例如稀土TbDyFe、FeGa合金以及FeSiB和FeCoMo等各种非晶态合金。三梁结构谐振音叉1可以由市场可获得的非晶态的磁致伸缩材料薄膜，通过激光切割、腐蚀等方法加工而成，也可以由TbDyFe和FeGa等磁致伸缩靶材，通过磁控溅射、激光脉冲沉积等物理乘积的方法制备。The materials for preparing the triple-beam resonant tuning fork 1 are magnetostrictive materials with ΔE effect, such as rare earth TbDyFe, FeGa alloys, and various amorphous alloys such as FeSiB and FeCoMo. The three-beam structure resonant tuning fork 1 can be made of a commercially available amorphous magnetostrictive material film by laser cutting, etching and other methods, or can be made of magnetostrictive targets such as TbDyFe and FeGa through magnetron sputtering It can be prepared by physical product methods such as radiation and laser pulse deposition.
压电驱动单元和压电检测单元的材料可以是压电陶瓷PZT、AlN、压电单晶PMN-PT等具有压电效应的材料。压电驱动单元和压电检测单元可以通过磁控溅射、激光脉冲沉积等方法沉积到三梁结构谐振音叉1上，也可以溶胶凝胶法或化学生长的方法加工到三梁结构谐振音叉1上。The materials of the piezoelectric driving unit and the piezoelectric detecting unit may be piezoelectric ceramics PZT, AlN, piezoelectric single crystal PMN-PT and other materials with piezoelectric effect. The piezoelectric drive unit and the piezoelectric detection unit can be deposited on the three-beam structure resonance tuning fork 1 by magnetron sputtering, laser pulse deposition, etc., or can be processed into the three-beam structure resonance tuning fork 1 by a sol-gel method or a chemical growth method superior.
由于三梁结构谐振音叉1由磁致伸缩伸缩材料制成，磁致伸缩材料的弹性模量随磁场变化，因此谐振器振动梁的固有频率随偏置磁场变化，在特定的振动模态下，谐振器中间梁和两个侧梁的弯矩和剪切力抵消，极大的降低了中间梁固定端的耦合振荡损耗，提高了谐振器的品质因数。Since the three-beam structure resonance tuning fork 1 is made of magnetostrictive material, the elastic modulus of the magnetostrictive material changes with the magnetic field, so the natural frequency of the resonator vibration beam changes with the bias magnetic field, and in a specific vibration mode, The bending moment and shear force of the middle beam and the two side beams of the resonator are canceled, which greatly reduces the coupling oscillation loss at the fixed end of the middle beam and improves the quality factor of the resonator.
所述压电驱动和压电检测单元分别是指置于三梁结构谐振音叉中间梁的两端压电陶瓷薄膜单元，它们分别用作振荡激励和振荡信号检测。在压电驱动单元上施加交变电压信号时，由于逆压电效应产生振动，振动信号耦合到谐振梁后激励三梁结构谐振音叉振荡，当该振荡信号传递到压电检测单元时，由于压电效应又转变成交变电压信号输出。由于三梁结构谐振音叉的弹性模量与外部静态或准静态磁场有关，整个过程中振荡频率的变化都与磁场有关。在弱磁场作用下，频率变化与磁场变化之间存在良好的线性比例关系。The piezoelectric drive and piezoelectric detection units respectively refer to piezoelectric ceramic film units placed at both ends of the middle beam of the three-beam resonant tuning fork, which are used for oscillation excitation and oscillation signal detection respectively. When an alternating voltage signal is applied to the piezoelectric drive unit, vibration is generated due to the inverse piezoelectric effect. After the vibration signal is coupled to the resonant beam, the resonance tuning fork of the three-beam structure is excited to oscillate. The electrical effect turns into an alternating voltage signal output. Since the elastic modulus of the three-beam resonant tuning fork is related to the external static or quasi-static magnetic field, the change of the oscillation frequency in the whole process is related to the magnetic field. Under the action of weak magnetic field, there is a good linear proportional relationship between the frequency change and the magnetic field change.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510615695.9A CN106556803B (en) | 2015-09-24 | 2015-09-24 | A kind of mode of resonance Magnetic Sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510615695.9A CN106556803B (en) | 2015-09-24 | 2015-09-24 | A kind of mode of resonance Magnetic Sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106556803A CN106556803A (en) | 2017-04-05 |
| CN106556803B true CN106556803B (en) | 2019-06-25 |
Family
ID=58415214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510615695.9A Active CN106556803B (en) | 2015-09-24 | 2015-09-24 | A kind of mode of resonance Magnetic Sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106556803B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109521377A (en) * | 2017-09-20 | 2019-03-26 | 南京理工大学 | The resonant mode Magnetic Sensor that magnetostriction/resonator is connected compound |
| CN107621316A (en) * | 2017-11-01 | 2018-01-23 | 成都皆为科技有限公司 | A kind of quick unit of beam quartz tuning-fork resonance power of integral type three |
| CN108165928A (en) * | 2017-12-25 | 2018-06-15 | 电子科技大学 | A kind of AlN films of FeGa alloy substrates and preparation method thereof |
| CN110389386A (en) * | 2018-04-16 | 2019-10-29 | 南京理工大学 | High-Q magnetoelectric metamaterial structures for geomagnetic field measurements |
| CN109239436A (en) * | 2018-09-21 | 2019-01-18 | 南京理工大学 | A kind of super low-power consumption resonant voltage sensor |
| CN109342799B (en) * | 2018-11-20 | 2021-05-25 | 南京理工大学 | A quartz resonant current sensor |
| CN110118947B (en) * | 2019-04-19 | 2021-01-05 | 华中科技大学 | A magnetic sensor device |
| CN110118946B (en) * | 2019-04-19 | 2020-12-29 | 华中科技大学 | A resonant magnetic sensor |
| CN111488680B (en) * | 2020-04-08 | 2021-04-30 | 清华大学 | Method and device for detecting specific elastic modulus of soft tissue |
| CN111624530B (en) * | 2020-05-26 | 2022-11-22 | 中国人民解放军国防科技大学 | Aluminum nitride/silicon/electrically adjustable magnetic film piezoelectric driving structure and preparation method thereof |
| CN113008220B (en) * | 2021-02-26 | 2022-12-02 | 上海大学 | A piezoelectric magnetic tuning disc gyroscope and its preparation method and application |
| CN113224509B (en) * | 2021-04-12 | 2022-06-14 | 华南理工大学 | Acoustic wave resonance electrically small antenna and preparation method thereof |
| DE102021109408A1 (en) * | 2021-04-14 | 2022-10-20 | Endress+Hauser SE+Co. KG | Magnetic field sensor and sensor arrangement |
| CN114337370B (en) * | 2021-12-14 | 2023-06-09 | 华东师范大学 | Magneto-electric transduction device capable of dynamically adjusting frequency response characteristic |
| CN114609554B (en) * | 2022-05-11 | 2022-07-29 | 电子科技大学 | Length-telescopic resonant magnetic sensor |
| CN116341222B (en) * | 2023-03-09 | 2024-05-28 | 南京理工大学 | Method for designing acoustic black hole dynamic vibration absorber with tree-shaped structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4451577B2 (en) * | 2001-07-26 | 2010-04-14 | パナソニック株式会社 | Magnetic field sensor |
| CN101604007A (en) * | 2009-07-14 | 2009-12-16 | 重庆大学 | Magnetic sensor combined with high magnetic permeability material and quartz tuning fork |
| US8878528B2 (en) * | 2011-06-30 | 2014-11-04 | Silicon Laboratories Inc. | MEMS-based magnetic sensor with a Lorentz force actuator used as force feedback |
| CN204495981U (en) * | 2014-11-28 | 2015-07-22 | 瑞声光电科技(常州)有限公司 | Based on the surface acoustic wave Magnetic Sensor of magnetoelectric effect |
-
2015
- 2015-09-24 CN CN201510615695.9A patent/CN106556803B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106556803A (en) | 2017-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106556803B (en) | A kind of mode of resonance Magnetic Sensor | |
| Zhao et al. | Fabrication and characterization of all-thin-film magnetoelectric sensors | |
| Dong et al. | Enhanced magnetoelectric effects in laminate composites of Terfenol-D/Pb (Zr, Ti) O-3 under resonant drive | |
| CN106872913A (en) | A kind of high q-factor resonance Magnetic Sensor of frequency conversion output | |
| CN101430369B (en) | Self-generating broadband laminated magneto-inducible piezoelectric effect AC magnetic field sensor and manufacturing method | |
| Fetisov et al. | Inverse magnetoelectric effects in a ferromagnetic–piezoelectric layered structure | |
| JP5946471B2 (en) | Magnetic field measurement method using magnetoelectric sensor | |
| Fetisov et al. | High-sensitivity wideband magnetic field sensor using nonlinear resonance magnetoelectric effect | |
| CN106291406B (en) | A coilless magnetic sensor | |
| CN107515336A (en) | A low power consumption resonant electric field sensor | |
| EP3596482A2 (en) | Ultra-low power magnetoelectric magnetic field sensor | |
| Record et al. | Direct and converse magnetoelectic effect in laminate bonded Terfenol-D–PZT composites | |
| US10613159B2 (en) | Magnetoelectric magnetic field measurement with frequency conversion | |
| Bian et al. | Magnetostrictive stress induced frequency shift in resonator for magnetic field sensor | |
| Zhang et al. | A horseshoe micromachined resonant magnetic field sensor with high quality factor | |
| CN108241130A (en) | A Fluxgate Magnetic Field Sensor Based on Magnetoelectric Effect | |
| Zhou et al. | Equivalent circuit method research of resonant magnetoelectric characteristic in magnetoelectric laminate composites using nonlinear magnetostrictive constitutive model | |
| Kim et al. | Piezoelectric/magnetostrictive MEMS resonant sensor array for in-plane multi-axis magnetic field detection | |
| Wu et al. | Giant circumferential magnetoelectric effect in Pb (Zr, Ti) O3/Mn-Zn-ferrite cylindrical composite | |
| JPWO2004070408A1 (en) | Magnetic sensor | |
| Bichurin et al. | Magnetoelectric magnetometers | |
| Ngoc et al. | Cantilever magnetoelectric PZT/Tb–Fe–Co resonators for magnetic sensing applications | |
| Lou et al. | A wide-range DC current sensing method based on disk-type magnetoelectric laminate composite and magnetic concentrator | |
| Wu et al. | Highly sensitive magneto-mechano-electric magnetic field sensor based on torque effect | |
| Tiercelin et al. | Thin film magnetoelectric composites near spin reorientation transition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |