CN106373973B - A kind of anti-interference imaging sensor - Google Patents
A kind of anti-interference imaging sensor Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 29
- 229910000531 Co alloy Inorganic materials 0.000 claims description 9
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 239000011521 glass Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- H10F39/80—Constructional details of image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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Abstract
Description
技术领域technical field
本发明涉及敏感元器件的传感器领域，具体涉及一种抗干扰图像传感器的设计。The invention relates to the sensor field of sensitive components, in particular to the design of an anti-interference image sensor.
背景技术Background technique
光敏传感器中最简单的电子器件是光敏电阻，它能感应光线的明暗变化，输出微弱的电信号，通过简单电子线路放大处理，可以控制LED灯具的自动开关。因此在自动控制、家用电器中得到广泛的应用，对于远程的照明灯具，例如：在电视机中作亮度自动调节，照相机种作自动曝光；另外，在路灯、航标等自动控制电路、卷带自停装置及防盗报警装置中等The simplest electronic device in the photosensitive sensor is the photoresistor, which can sense the light and dark changes of the light, output a weak electrical signal, and control the automatic switch of the LED lamp through simple electronic circuit amplification. Therefore, it is widely used in automatic control and household appliances. For remote lighting fixtures, such as: automatic brightness adjustment in TVs, automatic exposure in cameras; Stop device and anti-theft alarm device Medium
光敏传感器是最常见的传感器之一，它的种类繁多，主要有：光电管、光电倍增管、光敏电阻、光敏三极管、太阳能电池、红外线传感器、紫外线传感器、光纤式光电传感器、色彩传感器、CCD和CMOS图像传感器等。国内主要厂商有OTRON品牌等。光传感器是目前产量最多、应用最广的传感器之一，它在自动控制和非电量电测技术中占有非常重要的地位。最简单的光敏传感器是光敏电阻，当光子冲击接合处就会产生电流。Photosensitive sensor is one of the most common sensors. It has a wide variety, mainly including: photocell, photomultiplier tube, photoresistor, phototransistor, solar cell, infrared sensor, ultraviolet sensor, fiber optic photoelectric sensor, color sensor, CCD and CMOS image sensor, etc. Major domestic manufacturers include OTRON brand and so on. Optical sensor is one of the sensors with the largest output and widest application at present, and it occupies a very important position in automatic control and non-electrical measurement technology. The simplest light-sensitive sensor is a photoresistor, which generates a current when a photon hits the junction.
图1为一种常见的图像传感器的结构示意图，其包括具有光接收区11的衬底12，在光接收区周围具有间隔件14（Spacer），封装玻璃板13通过粘结层固定在间隔件14上。该传感器只能对正面的光进行感测，而无法对其背面的光进行感测，限制了传感器的应用范围。随着超大规模集成电路对高集成度和高性能的需求逐渐提高，如何实现传感器的双面感测，并保证传感器的尺寸小型化以及传感器间的干扰最小化是本领域技术人员亟待解决的问题。Fig. 1 is a schematic structural diagram of a common image sensor, which includes a substrate 12 with a light receiving area 11, a spacer 14 (Spacer) around the light receiving area, and a packaging glass plate 13 fixed on the spacer by an adhesive layer 14 on. The sensor can only sense the light on the front side, but cannot sense the light on the back side, which limits the application range of the sensor. With the gradual increase of VLSI requirements for high integration and high performance, how to realize the double-sided sensing of sensors and ensure the miniaturization of sensors and the minimization of interference between sensors is an urgent problem to be solved by those skilled in the art. .
发明内容Contents of the invention
基于解决上述问题，本发明提供了一种抗干扰图像传感器，包括：Based on solving the above problems, the present invention provides an anti-jamming image sensor, comprising:
第一衬底，所述第一衬底包括具有第一光接收区的正面和与所述正面相对的背面；a first substrate including a front surface having a first light receiving region and a back surface opposite to the front surface;
硅基板，所述硅基板包括具有凹槽的正面和与所述正面相对的背面；a silicon substrate comprising a front surface having grooves and a back surface opposite the front surface;
第二衬底，设置于所述凹槽底部，所述第二衬底包括具有第二光接收区的正面和与所述正面相对的背面，所述第二衬底的正面与所述硅基板的正面共面；The second substrate is arranged at the bottom of the groove, the second substrate includes a front surface with a second light receiving area and a back surface opposite to the front surface, the front surface of the second substrate is in contact with the silicon substrate The front face of the
所述第一衬底的背面与所述硅基板的背面通过一层铁钴合金层键合。The back side of the first substrate is bonded to the back side of the silicon substrate through an iron-cobalt alloy layer.
根据本发明的实施例，还包括在所述第一衬底的正面上通过第一感光树脂层粘合的第一红外滤波片。According to an embodiment of the present invention, it further includes a first infrared filter bonded on the front surface of the first substrate through a first photosensitive resin layer.
根据本发明的实施例，还包括在所述第二衬底的正面和所述硅基板的正面上通过第二感光树脂层、透明填充层粘合的第二红外滤波片。According to an embodiment of the present invention, it further includes a second infrared filter bonded on the front side of the second substrate and the front side of the silicon substrate through a second photosensitive resin layer and a transparent filling layer.
根据本发明的实施例，还包括在所述第一衬底的正面上的多个第一焊盘和在所述第二衬底的正面上的多个第二焊盘。According to an embodiment of the present invention, a plurality of first pads on the front side of the first substrate and a plurality of second pads on the front side of the second substrate are further included.
根据本发明的实施例，还包括电连接所述第一焊盘的、依次穿过所述第一衬底、铁钴合金层、硅基板和第二感光树脂层的第一导电通孔，以及电连接所述第二焊盘的、穿过所述第二感光树脂层的第二导电通孔。According to an embodiment of the present invention, it further includes a first conductive via hole that is electrically connected to the first pad and sequentially passes through the first substrate, the iron-cobalt alloy layer, the silicon substrate and the second photosensitive resin layer, and A second conductive via hole that is electrically connected to the second pad and passes through the second photosensitive resin layer.
根据本发明的实施例，所述第一导电通孔和第二导电通孔分别通过焊球与所述第二红外滤波片的导电图案电连接。According to an embodiment of the present invention, the first conductive via and the second conductive via are respectively electrically connected to the conductive pattern of the second infrared filter through solder balls.
根据本发明的实施例，所述第一导电通孔与所述第二导电通孔先电连接后，再通过焊球与所述第二红外滤波片的导电图案电连接。According to an embodiment of the present invention, the first conductive via is electrically connected to the second conductive via first, and then electrically connected to the conductive pattern of the second infrared filter through solder balls.
根据本发明的实施例，所述第一导电通孔与所述第二导电通孔通过在第二感光树脂层内横向延伸的第三导电通孔电连接。According to an embodiment of the present invention, the first conductive via is electrically connected to the second conductive via via a third conductive via extending laterally in the second photosensitive resin layer.
根据本发明的实施例，所述第一感光树脂层和第二感光树脂层为感光环氧树脂。According to an embodiment of the present invention, the first photosensitive resin layer and the second photosensitive resin layer are photosensitive epoxy resin.
根据本发明的实施例，所述第二衬底通过粘合胶固定在所述凹槽底部。According to an embodiment of the present invention, the second substrate is fixed on the bottom of the groove by adhesive.
根据本发明的实施例，所述凹槽内填充有封装树脂以环绕所述第二衬底的侧面。According to an embodiment of the present invention, the cavity is filled with encapsulation resin to surround the side surface of the second substrate.
本发明的技术方案，具有如下优点：The technical solution of the present invention has the following advantages:
（1）上下两个衬底的焊盘通过通孔电连接之后，在经过横向的通孔将两个纵向通孔电连接，由于第二感光树脂层很薄，可以保证第二光接收区的接收光的能力，避免被焊球遮挡；(1) After the pads of the upper and lower substrates are electrically connected through the through holes, the two vertical through holes are electrically connected through the horizontal through holes. Since the second photosensitive resin layer is very thin, the second light receiving area can be ensured. The ability to receive light and avoid being blocked by solder balls;
（2）第二红外滤光片上具有导电图案，既有滤光保护的作用，也用作导电基板，保证薄型化，省去了电路板；(2) The second infrared filter has a conductive pattern, which not only has the function of filtering and protecting, but also serves as a conductive substrate to ensure thinning and save the circuit board;
（3）铁钴合金层可以间隔第一衬底和第二衬底，防止两侧的传感器的电磁干扰，还可以将两侧器件键合起来。(3) The iron-cobalt alloy layer can separate the first substrate and the second substrate, prevent electromagnetic interference of the sensors on both sides, and can also bond the devices on both sides.
附图说明Description of drawings
图1为现有技术的图像传感器的剖面图；1 is a cross-sectional view of an image sensor in the prior art;
图2为本发明第一实施例的抗干扰图像传感器的剖面图；2 is a cross-sectional view of the anti-jamming image sensor according to the first embodiment of the present invention;
图3为本发明第二实施例的抗干扰图像传感器的剖面图。FIG. 3 is a cross-sectional view of an anti-jamming image sensor according to a second embodiment of the present invention.
具体实施方式Detailed ways
第一实施例first embodiment
参见图2，一种抗干扰图像传感器2，包括：Referring to Fig. 2, an anti-jamming image sensor 2 includes:
第一衬底21a，其可以是硅衬底，在其上形成电子元件（光接收区），所述第一衬底21a包括具有第一光接收区22a的正面和与所述正面相对的背面；A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;
硅基板31，所述硅基板31包括具有凹槽25的正面和与所述正面相对的背面，所述凹槽25深度小于所述硅基板31的厚度；A silicon substrate 31, the silicon substrate 31 comprising a front surface with a groove 25 and a back surface opposite to the front surface, the depth of the groove 25 being smaller than the thickness of the silicon substrate 31;
第二衬底21b，设置于所述凹槽25底部，所述第二衬底21b包括具有第二光接收区22b的正面和与所述正面相对的背面，所述第二衬底21b的正面与所述硅基板31的正面共面，所述凹槽25底部应远离所述第一光接收区22a；The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the front surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;
所述第一衬底21a的背面与所述硅基板31的背面通过一层铁钴合金层33键合。The back side of the first substrate 21 a is bonded to the back side of the silicon substrate 31 through an iron-cobalt alloy layer 33 .
在所述第一衬底21a的正面上具有通过第一感光树脂层28a粘合的第一红外滤波片24a，所述第一红外滤波片24a可以是具有红外截止膜的玻璃片。On the front side of the first substrate 21a, there is a first infrared filter 24a bonded by a first photosensitive resin layer 28a, and the first infrared filter 24a may be a glass sheet with an infrared cut-off film.
在所述第二衬底21b的正面和硅基板31的正面上具有通过第二感光树脂层28b、透明填充层29粘合的第二红外滤波片24b，所述透明填充层可以是透明硅胶或环氧树脂。On the front side of the second substrate 21b and the front side of the silicon substrate 31, there is a second infrared filter 24b bonded by a second photosensitive resin layer 28b and a transparent filling layer 29, and the transparent filling layer can be transparent silica gel or epoxy resin.
在所述第一衬底21a的正面上具有多个第一焊盘23a，在所述第二衬底21b的正面上具有多个第二焊盘23b。There are a plurality of first pads 23a on the front surface of the first substrate 21a, and a plurality of second pads 23b on the front surface of the second substrate 21b.
还包括电连接所述第一焊盘23a的、依次穿过所述第一衬底21a、铁钴合金层33、硅基板31和第二感光树脂层28b的第一导电通孔27a，以及电连接所述第二焊盘23b的、穿过所述第二感光树脂层28b的第二导电通孔27b，所述第一导电通孔27a是具有绝缘介质层32包裹导电材料的通孔结构。It also includes a first conductive via hole 27a that is electrically connected to the first pad 23a and passes through the first substrate 21a, the iron-cobalt alloy layer 33, the silicon substrate 31 and the second photosensitive resin layer 28b in sequence, and an electrical The second conductive via 27b connected to the second pad 23b and passing through the second photosensitive resin layer 28b, the first conductive via 27a is a via structure with an insulating medium layer 32 wrapped with conductive material.
所述第一导电通孔27a和第二导电通孔27b分别通过第一焊球30a和第二焊球30b与所述第二红外滤波片24b的导电图案电连接。The first conductive via 27a and the second conductive via 27b are electrically connected to the conductive pattern of the second infrared filter 24b through the first solder ball 30a and the second solder ball 30b respectively.
根据该实施例，所述第一感光树脂层28a和第二感光树脂层28b为感光环氧树脂。According to this embodiment, the first photosensitive resin layer 28a and the second photosensitive resin layer 28b are photosensitive epoxy resin.
根据该实施例，所述第二衬底21b通过粘合胶26固定在所述凹槽25底部。According to this embodiment, the second substrate 21b is fixed on the bottom of the groove 25 by an adhesive 26 .
根据该实施例，所述凹槽25内填充有封装树脂以环绕所述第二衬底21b的侧面。According to this embodiment, the cavity 25 is filled with encapsulation resin to surround the side of the second substrate 21b.
第二实施例second embodiment
参见图3，一种抗干扰图像传感器3，包括：Referring to Fig. 3, an anti-jamming image sensor 3 includes:
第一衬底21a，其可以是硅衬底，在其上形成电子元件（光接收区），所述第一衬底21a包括具有第一光接收区22a的正面和与所述正面相对的背面；A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;
硅基板31，所述硅基板31包括具有凹槽25的正面和与所述正面相对的背面，所述凹槽25深度小于所述硅基板31的厚度；A silicon substrate 31, the silicon substrate 31 comprising a front surface with a groove 25 and a back surface opposite to the front surface, the depth of the groove 25 being smaller than the thickness of the silicon substrate 31;
第二衬底21b，设置于所述凹槽25底部，所述第二衬底21b包括具有第二光接收区22b的正面和与所述正面相对的背面，所述第二衬底21b的正面与所述硅基板31的正面共面，所述凹槽25底部应远离所述第一光接收区22a；The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the front surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;
所述第一衬底21a的背面与所述硅基板31的背面通过一层铁钴合金层33键合。The back side of the first substrate 21 a is bonded to the back side of the silicon substrate 31 through an iron-cobalt alloy layer 33 .
在所述第一衬底21a的正面上具有通过第一感光树脂层28a粘合的第一红外滤波片24a，所述第一红外滤波片24a可以是具有红外截止膜的玻璃片。On the front side of the first substrate 21a, there is a first infrared filter 24a bonded by a first photosensitive resin layer 28a, and the first infrared filter 24a may be a glass sheet with an infrared cut-off film.
在所述第二衬底21b的正面和所述硅基板31的正面上具有通过第二感光树脂层28b、透明填充层29粘合的第二红外滤波片24b，所述透明填充层可以是透明硅胶或环氧树脂。On the front side of the second substrate 21b and the front side of the silicon substrate 31, there is a second infrared filter 24b bonded by a second photosensitive resin layer 28b and a transparent filling layer 29, and the transparent filling layer may be transparent Silicone or epoxy.
在所述第一衬底21a的正面上具有多个第一焊盘23a，在所述第二衬底21b的正面上具有多个第二焊盘23b。There are a plurality of first pads 23a on the front surface of the first substrate 21a, and a plurality of second pads 23b on the front surface of the second substrate 21b.
还包括电连接所述第一焊盘23a的、依次穿过所述第一衬底21a、铁钴合金层33、硅基板31和第二感光树脂层28b的第一导电通孔27a，以及电连接所述第二焊盘23b的、穿过所述第二感光树脂层28b的第二导电通孔27b，所述第一导电通孔27a是具有绝缘介质层32包裹导电材料的通孔结构。所述第一导电通孔27a在第二导电通孔27b和凹槽25的外侧，It also includes a first conductive via hole 27a that is electrically connected to the first pad 23a and passes through the first substrate 21a, the iron-cobalt alloy layer 33, the silicon substrate 31 and the second photosensitive resin layer 28b in sequence, and an electrical The second conductive via 27b connected to the second pad 23b and passing through the second photosensitive resin layer 28b, the first conductive via 27a is a via structure with an insulating medium layer 32 wrapped with conductive material. The first conductive via 27a is outside the second conductive via 27b and the groove 25,
所述第一导电通孔27a与所述第二导电通孔27b通过在第二感光树脂层28b内横向延伸的第三导电通孔27c电连接。再通过第一导电通孔27a下方的焊球30与所述第二红外滤波片24b的导电图案电连接。The first conductive via 27a is electrically connected to the second conductive via 27b through a third conductive via 27c extending laterally in the second photosensitive resin layer 28b. It is then electrically connected to the conductive pattern of the second infrared filter 24b through the solder ball 30 below the first conductive via hole 27a.
上下两个衬底的焊盘通过通孔电连接之后，在经过横向的通孔将两个纵向通孔电连接，由于第二感光树脂层很薄，可以保证第二光接收区的接收光的能力，避免被焊球遮挡。After the pads of the upper and lower substrates are electrically connected through the through holes, the two vertical through holes are electrically connected through the horizontal through holes. Since the second photosensitive resin layer is very thin, the light receiving area of the second light receiving area can be ensured. ability to avoid being blocked by solder balls.
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。Finally, it should be noted that: obviously, the above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, obvious changes or modifications derived therefrom are still within the protection scope of the present invention.
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