CN106356701A - Passive Q-regulating laser device packaged in butterfly form - Google Patents
Passive Q-regulating laser device packaged in butterfly form Download PDFInfo
- Publication number
- CN106356701A CN106356701A CN201611049966.XA CN201611049966A CN106356701A CN 106356701 A CN106356701 A CN 106356701A CN 201611049966 A CN201611049966 A CN 201611049966A CN 106356701 A CN106356701 A CN 106356701A
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- China
- Prior art keywords
- laser
- chip
- crystal
- passive
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000006096 absorbing agent Substances 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000005365 phosphate glass Substances 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000005355 lead glass Substances 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims 1
- RHFUXPCCELGMFC-UHFFFAOYSA-N n-(6-cyano-3-hydroxy-2,2-dimethyl-3,4-dihydrochromen-4-yl)-n-phenylmethoxyacetamide Chemical class OC1C(C)(C)OC2=CC=C(C#N)C=C2C1N(C(=O)C)OCC1=CC=CC=C1 RHFUXPCCELGMFC-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000007789 sealing Methods 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a passive Q-regulating laser device packaged in a butterfly form. The passive Q-regulating laser device comprises a metal pipe shell, a semiconductor laser chip, a ceramic substrate, a pumping optical system, a laser medium, a saturable absorber, an optical filter, a photodiode and a top cover, wherein the top cover is arranged at the top of the metal pipe shell; the ceramic substrate is welded in the metal pipe shell; the semiconductor laser chip is bonded on the ceramic substrate; a row of first pins and second pins which are separate from each other are arranged on the metal pipe shell; the first pin is electrically connected with the semiconductor laser chip through a wire; the second pin is electrically connected with the photodiode through the wire; the optical filter is arranged on a side wall in the metal pipe shell. The passive Q-regulating laser device packaged in the butterfly form is packaged with mature butterfly type metal, so that the sealing property and reliability are increased. The semiconductor laser chip is fixed on the ceramic substrate and the metal pipe shell in a welding manner, so that the heat dissipation is benefited.
Description
Technical field
The present invention relates to laser technology field, specifically a kind of passive tune q laser instrument of butterfly encapsulation.
Background technology
Since laser comes out, laser processing technology is just subject to people's attention, and laser processing technology has become first so far
Enter the important component part of manufacturing technology, for example, be used for producing the tune q laser instrument of pulse laser, there is high-peak power, high energy
The advantages of metric density, it is widely used to Laser Micro-Machining at present, the field such as material marking, for the pulse laser in these fields
Device mainly has infrared laser, green (light) laser, violet laser.But existing laser instrument is complex, mainly adopt acousto-optic
Or electric light adjusts the green glow of the infrared solid laser of q and its nonlinear frequency transformation and ultraviolet laser to realize, or
The laser instrument of q is adjusted to be amplified as seed source using acousto-optic or electric light, cost is generally higher.
Content of the invention
It is an object of the invention to provide a kind of passive tune q laser instrument of butterfly encapsulation, to solve in above-mentioned background technology
The problem proposing.
For achieving the above object, the present invention provides following technical scheme: a kind of passive tune q laser instrument of butterfly encapsulation, bag
Include Can, semiconductor laser chip, ceramic substrate, pump optical system, laser medium, saturable absorber, filter
Piece, photodiode and top cover, the top of described Can is provided with top cover, is connected to ceramic liner in the internal welding of Can
Bottom, bonding semiconductor chip of laser on a ceramic substrate, Can is provided with rows of the first independent stitch and the second pin
Foot, the first stitch electrically connects semiconductor laser chip by wire, and the second stitch electrically connects photodiode by wire,
The side wall of the inside of Can is provided with optical filter；The side of described semiconductor laser chip is provided with pump optical system
System, is provided with laser medium in the side of pump optical system, is provided with saturable absorber, laser medium in the side of laser medium
Integral with glued together group of saturable absorber, and two sides is coated with laser medium film respectively, forms laserresonator.
As the further scheme of the present invention: described semiconductor laser chip welds on a ceramic substrate, ceramic substrate table
There is plated design in face；The upper and lower surface of semiconductor laser chip is both positive and negative polarity, and positive pole is directly welded in ceramic substrate down, on
Surface is negative pole, by another part conducting of gold thread and plated design.
As the further scheme of the present invention: described first stitch and the second stitch and chip of laser or photodiode
Between conducting be aluminum steel or gold thread.
As the further scheme of the present invention: the laser wavelength range of described semiconductor laser chip transmitting is 785nm-
1100nm.
As the further scheme of the present invention: described pump optical system is included no less than optical lenses.
As the further scheme of the present invention: it is laser material that described laser medium adopts neodymium-doped element, and laser material can
To be yvo4 crystal, gdvo4 crystal, yag crystal or phosphate glass.
As the further scheme of the present invention: described saturable absorber is the yag crystal mixing chromium.
As the further scheme of the present invention: described laser medium, using the laser material of er-doped simultaneously and yttrium, swashs
Luminescent material can be phosphate glass, silicate glass, fluorphosphate glass and yag crystal.
As the further scheme of the present invention: described saturable absorber is the mgal mixing cobalt element2o4Crystal, mgal6o10
Crystal, lamgal11o19Crystal and al2o3Crystal.
As the further scheme of the present invention: the surface of described optical filter is coated with deielectric-coating, what laserresonator exported swashs
Light pulse can pass through.
Compared with prior art, the invention has the advantages that:
The passive tune q laser instrument of this butterfly encapsulation, the present invention, using ripe butterfly-type Metal Packaging, improves sealing and reliability
Property；By semiconductor laser chip and ceramic substrate, Can, it is fixed by way of welding, be conducive to radiating.
Brief description
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the side view of the present invention.
In figure: 1- Can；2- semiconductor laser chip；3- ceramic substrate；4- pump optical system；5- laser is situated between
Matter；6- saturable absorber；7- optical filter；8- photodiode；9- top cover；10- first stitch；11- second stitch.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
Refer to Fig. 1-2, in the embodiment of the present invention, a kind of passive tune q laser instrument of butterfly encapsulation, including Can 1,
Semiconductor laser chip 2, ceramic substrate 3, pump optical system 4, laser medium 5, saturable absorber 6, optical filter 7, light
Electric diode 8 and top cover 9, the top of Can 1 is provided with top cover 9, and Can 1 is used for installing each assembly of laser instrument, top cover 9
For all elements in sealing metal shell 1, it is connected to ceramic substrate 3 in the internal welding of Can 1, ceramic substrate 3 is used for
Bonding semiconductor chip of laser 2, and be welded on Can 1, bonding semiconductor chip of laser 2 in ceramic substrate 3,
Described semiconductor laser chip 2 is welded in ceramic substrate 3, and there is plated design on ceramic substrate 3 surface；Semiconductor laser chip 2
Upper and lower surface be both positive and negative polarity, positive pole is directly welded in ceramic substrate 3 down, and upper surface is negative pole, by gold thread with gold-plated
Another part conducting of pattern, the laser wavelength range of semiconductor laser chip 2 transmitting is 785nm-1100nm, and quasiconductor swashs
As pump light source, for pumped laser medium, Can 1 is provided with rows of independent the first stitch 10 He to light device chip 2
Second stitch 11, the first stitch 10 electrically connects semiconductor laser chip 2 by wire, and the second stitch 11 is electrically connected by wire
Photodiode 8, the conducting between described first stitch 10 and the second stitch 11 and chip of laser 2 or photodiode 8 is
Aluminum steel or copper cash, photodiode 8, for detecting pulsed laser output signal, the side wall of the inside of Can 1 is provided with
Optical filter 7, the surface of optical filter 7 is coated with deielectric-coating, and the laser pulse of laserresonator output can pass through, and optical filter 7 is located at can
After saturated absorbing body 6, for stopping the laser that the semiconductor laser chip 2 not absorbed by laser medium 5 sends, and reflect sharp
The portion of energy of light pulse output；The side of semiconductor laser chip 2 is provided with pump optical system 4, pump optical system 4
Including no less than optical lenses, after pump optical system 4 is located at semiconductor laser chip 2, by semiconductor laser core
The laser coupled that piece 2 sends enters laser medium 5, is provided with laser medium 5 in the side of pump optical system 4, and laser medium 5 adopts
The laser material of er-doped simultaneously and yttrium, laser material can be phosphate glass, silicate glass, fluorphosphate glass with
Yag crystal, it is laser material that laser medium 5 adopts neodymium-doped element, and laser material can be yvo4 crystal, gdvo4 crystal, yag
Crystal or phosphate glass, after laser medium 5 is placed in semiconductor laser chip 2 and pump optical system 4, absorb quasiconductor
The laser that laser chip 2 produces, produces stimulated radiation, is provided with saturable absorber 6 in the side of laser medium 5, and saturable is inhaled
Acceptor 6 is to mix the yag crystal of chromium, saturable absorber 6 be mix the mgal2o4 crystal of cobalt element, mgal6o10 crystal,
Lamgal11o19 crystal and al2o3 crystal, after saturable absorber 6 is placed in laser medium 5, partially absorb laser medium 5
The stimulated radiation going out, produces pulsed laser output, and laser medium 5 is integral with glued together group of saturable absorber 6, and two
Face is coated with laser medium film respectively, forms laserresonator, using ripe butterfly-type Metal Packaging, improves sealing and reliability
Property；Semiconductor laser chip 2 is fixed with heat sink by way of welding, is conducive to radiating.
In sum: the passive tune q laser instrument of this butterfly encapsulation, the present invention, using ripe butterfly-type Metal Packaging, improves
Sealing and reliability；By semiconductor laser chip 2 and ceramic substrate 3, Can 1, carried out solid by way of welding
Fixed, be conducive to radiating.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of the spirit or essential attributes of the present invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as limiting involved claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment only wraps
Containing an independent technical scheme, only for clarity, those skilled in the art should for this narrating mode of description
Using description as an entirety, the technical scheme in each embodiment can also form those skilled in the art through appropriately combined
Understandable other embodiment.
Claims (10)
1. a kind of passive tune q laser instrument of butterfly encapsulation, including Can (1), semiconductor laser chip (2), ceramic liner
Bottom (3), pump optical system (4), laser medium (5), saturable absorber (6), optical filter (7), photodiode (8) and top
Lid (9) it is characterised in that: the top of described Can (1) is provided with top cover (9), is connected to pottery in the internal welding of Can (1)
Ceramic liner bottom (3), in the upper bonding semiconductor chip of laser (2) of ceramic substrate (3), Can (1) is provided with rows of independent
First stitch (10) and the second stitch (11), the first stitch (10) by wire electrically connect semiconductor laser chip (2), second
Stitch (11) electrically connects photodiode (8) by wire, is provided with optical filter (7) on the side wall of the inside of Can (1)；
The side of described semiconductor laser chip (2) is provided with pump optical system (4), sets in the side of pump optical system (4)
There is laser medium (5), be provided with saturable absorber (6), laser medium (5) and saturable absorption in the side of laser medium (5)
Glued together group of body (6) is integral, and two sides is coated with laser medium film respectively, forms laserresonator.
2. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described quasiconductor swashs
Optical chip (2) is welded in ceramic substrate (3), and there is plated design on ceramic substrate (3) surface；Semiconductor laser chip (2) upper
Lower surface is both positive and negative polarity, and positive pole is directly welded in ceramic substrate (3) down, and upper surface is negative pole, by gold thread and gold-plated figure
Another part conducting of case.
3. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described first stitch
(10) conducting between and the second stitch (11) and chip of laser (2) or photodiode (8) is aluminum steel or gold thread.
4. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described quasiconductor swashs
The laser wavelength range that light device chip (2) is launched is 785nm-1100nm.
5. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described pump optical
System (4) is included no less than optical lenses.
6. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described laser medium
(5) neodymium-doped element is adopted to be laser material, laser material can be yvo4 crystal, gdvo4 crystal, yag crystal or phosphate glass
Glass.
7. the passive tune q laser instrument according to a kind of butterfly encapsulation described in claim 1 and claim 6 it is characterised in that: institute
Stating saturable absorber (6) is the yag crystal mixing chromium.
8. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described laser medium
(5) using the laser material of er-doped simultaneously and yttrium, laser material can be phosphate glass, silicate glass, fluorophosphoric acid
Salt glass and yag crystal.
9. the passive tune q laser instrument according to a kind of butterfly encapsulation described in claim 1 and claim 8 it is characterised in that: institute
Stating saturable absorber (6) is the mgal mixing cobalt element2o4Crystal, mgal6o10Crystal, lamgal11o19Crystal and al2o3Crystal.
10. a kind of butterfly encapsulation according to claim 1 passive tune q laser instrument it is characterised in that: described optical filter
(7) surface is coated with deielectric-coating, and the laser pulse of laserresonator output can pass through.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611049966.XA CN106356701A (en) | 2016-11-24 | 2016-11-24 | Passive Q-regulating laser device packaged in butterfly form |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611049966.XA CN106356701A (en) | 2016-11-24 | 2016-11-24 | Passive Q-regulating laser device packaged in butterfly form |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356701A true CN106356701A (en) | 2017-01-25 |
Family
ID=57862260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611049966.XA Pending CN106356701A (en) | 2016-11-24 | 2016-11-24 | Passive Q-regulating laser device packaged in butterfly form |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106356701A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114204385A (en) * | 2021-12-02 | 2022-03-18 | 深圳联品激光技术有限公司 | Solid state laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020181513A1 (en) * | 2001-06-05 | 2002-12-05 | Fredrik Laurell | Q-switched laser |
| CN2667747Y (en) * | 2003-11-26 | 2004-12-29 | 上海冠威光电有限公司 | Enclosed micro green light laser |
| CN2726179Y (en) * | 2004-09-09 | 2005-09-14 | 武汉华工正源光子技术有限公司 | 8 P in butterfly shaped packaged CATV light emitting assembly |
| CN202111365U (en) * | 2011-04-22 | 2012-01-11 | 上海高意激光技术有限公司 | Passively Q-Switched Microchip Laser |
| CN103545700A (en) * | 2012-07-16 | 2014-01-29 | 徐卫文 | Integrated single-platform miniature laser |
| CN105811228A (en) * | 2016-05-30 | 2016-07-27 | 中国科学院半导体研究所 | Highly-doped broad-spectrum erbium-ytterbium co-doped superfluorescent fiber source integrated device |
-
2016
- 2016-11-24 CN CN201611049966.XA patent/CN106356701A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020181513A1 (en) * | 2001-06-05 | 2002-12-05 | Fredrik Laurell | Q-switched laser |
| CN2667747Y (en) * | 2003-11-26 | 2004-12-29 | 上海冠威光电有限公司 | Enclosed micro green light laser |
| CN2726179Y (en) * | 2004-09-09 | 2005-09-14 | 武汉华工正源光子技术有限公司 | 8 P in butterfly shaped packaged CATV light emitting assembly |
| CN202111365U (en) * | 2011-04-22 | 2012-01-11 | 上海高意激光技术有限公司 | Passively Q-Switched Microchip Laser |
| US20120269214A1 (en) * | 2011-04-22 | 2012-10-25 | Photop Suwtech, Inc. | Passively Q-switched Microlaser |
| CN103545700A (en) * | 2012-07-16 | 2014-01-29 | 徐卫文 | Integrated single-platform miniature laser |
| CN105811228A (en) * | 2016-05-30 | 2016-07-27 | 中国科学院半导体研究所 | Highly-doped broad-spectrum erbium-ytterbium co-doped superfluorescent fiber source integrated device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114204385A (en) * | 2021-12-02 | 2022-03-18 | 深圳联品激光技术有限公司 | Solid state laser device |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170125 |
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