CN106339011A - Chip temperature detection and control method and device - Google Patents

Abstract

The invention provides a chip temperature detection and control method, including: detecting the temperature information of the chip, converting the temperature information into voltage information; quantifying and calibrating the voltage information; Voltage information to control the working state of the chip. The invention also provides a chip temperature detection and control device.

Description

A chip temperature detection and control method and device

technical field

The invention relates to the technical field of chip design, in particular to a chip temperature detection and control method and device.

Background technique

With the improvement of deep nanotechnology and chip integration, various highly integrated chips have appeared in the chip market, such as integrated multi-core processors, high-definition video, graphic images, high-definition display, multimedia technology, 2/3/4G communication capabilities , WIFI, GPS/GLONASS/Galileo, highly integrated chips of NFC technology, etc. With the improvement of chip integration, chip processing capabilities are getting stronger and stronger, product forms are more diverse, and work scenarios are becoming more complex.

With the enhancement of chip integration and processing capability, more heat will be generated when the chip is working, resulting in an increase of board-level heat dissipation and an increase of system board-level temperature. At present, there is no effective temperature detection method that can effectively detect the temperature of the chip and the board level, so that the temperature information of the system board level, between chips, and inside the chip is missing, resulting in products that are caused by excessive chip temperature. Performance degradation, product reliability reduction, poor user experience, etc., may even lead to communication failure between chips, chips and system components burn out.

Contents of the invention

In view of this, the embodiment of the present invention expects to provide a chip temperature detection and control method and device, which can obtain the temperature information of each position of the chip when it is working, and perform adaptive adjustment according to the chip temperature, avoiding various problems caused by excessive chip temperature. question.

In order to achieve the above object, technical solution of the present invention is achieved in that way:

An embodiment of the present invention provides a chip temperature detection and control method, the method comprising:

Detecting temperature information of the chip, converting the temperature information into voltage information;

quantifying and calibrating the voltage information;

According to the quantized and calibrated voltage information, the working state of the chip is controlled.

In the above solution, the detecting the temperature information of the chip, and converting the temperature information into voltage information includes: detecting the temperature of at least one position on the chip, and converting the detected temperature information of at least one position into corresponding voltage information;

Correspondingly, the method for quantifying and calibrating voltage information includes: selecting at least one voltage information for quantizing and calibrating.

In the above solution, the conversion of temperature information into voltage information includes:

The temperature information is converted into voltage information according to the temperature characteristic of the I-V relationship of the triode.

In the above solution, the controlling the working state of the chip according to the quantized and calibrated voltage information includes: when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition, an interrupt is generated, and according to the The temperature value corresponding to the quantized and calibrated voltage information is used to control the working state of the chip.

In the above solution, the working state of the control chip according to the temperature value corresponding to the quantized and calibrated voltage information includes but not limited to: performing temperature alarms, Pause/start, adjust some processing functions of the chip.

The embodiment of the present invention also provides a chip temperature detection and control device, the device includes: a temperature detector, a quantization calibrator, and a main processor; wherein,

The temperature detector is used to detect the temperature information of the chip, and convert the temperature information into voltage information;

The quantization calibrator is used to quantify and calibrate the voltage information;

The main processor is used to control the working state of the chip according to the quantized and calibrated voltage information.

In the above scheme, the temperature detector is specifically used for:

Detecting the temperature of at least one position on the chip, and converting the detected temperature information of at least one position into corresponding voltage information;

The apparatus also includes a control switch for selecting at least one voltage information to be sent to the quantizing calibrator.

In the above scheme, the temperature detector is specifically used for:

The temperature information is converted into voltage information according to the temperature characteristic of the I-V relationship of the triode.

In the above solution, the device further includes a controller, configured to generate an interrupt and notify the main processor when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition;

The main processor is specifically configured to: control the working state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.

In the above solution, the main processor is specifically configured to: perform temperature alarm, pause/start, and adjust some processing functions of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.

The chip temperature detection and control method provided by the embodiment of the present invention first detects the temperature information of the chip, converts the temperature information into voltage information; then quantifies and calibrates the voltage information; and then according to the quantized and calibrated Voltage information to control the working state of the chip. In this way, the temperature of the chip can be effectively obtained, and self-adaptive adjustment can be made according to the temperature of the chip, which effectively solves the problem of product performance degradation, product reliability reduction, user experience deterioration, and problems between chips caused by excessive temperature during chip operation. Communication failure, chips and system components burn out, etc.

Description of drawings

FIG. 1 is a schematic flow chart of a chip temperature detection and control method according to an embodiment of the present invention;

2 is a schematic diagram of the overall structure of a chip temperature detection and control device according to an embodiment of the present invention;

3 is a schematic diagram of the detailed structure of a chip temperature detection and control device according to an embodiment of the present invention;

Fig. 4 is a schematic structural diagram of a temperature detector and a quantization calibrator according to an embodiment of the present invention;

5 is a schematic flow chart of a digital signal calibration method according to an embodiment of the present invention;

6 is a schematic structural diagram of a chip temperature detection and control device according to Embodiment 2 of the present invention;

7 is a schematic diagram of the layout structure of the temperature detection component on the chip according to the embodiment of the present invention;

FIG. 8 is a schematic structural diagram of multiple chip temperature acquisition devices according to an embodiment of the present invention.

detailed description

In the embodiment of the present invention, the temperature information of the chip is detected first, and the temperature information is converted into voltage information; then the voltage information is quantified and calibrated; and then the chip is controlled according to the quantized and calibrated voltage information working status.

The chip temperature detection and control method according to the embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. FIG. 1 is a schematic flow chart of the chip temperature detection and control method according to the embodiment of the present invention. As shown in FIG. The chip temperature detection and control method described in the embodiment includes the following steps:

Step 101: Detect the temperature information of the chip, and convert the temperature information into voltage information;

In the embodiment of the present invention, the temperature of at least one position on the chip is detected, and the detected temperature information of the at least one position is converted into corresponding voltage information; the temperature value is represented by the voltage information. For example, for a chip with a large area, the temperature information of multiple positions on the chip can be detected at the same time, such as the temperature information of 4 positions on the chip is detected at the same time, and the detected temperature information of the 4 positions is converted into corresponding voltage information;

In this step, the converting temperature information into voltage information includes: converting the temperature information into voltage information according to the temperature characteristics of the I-V relationship of the triode.

Temperature will affect the current density of the triode. When the current density passing through the triode is different, the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode is approximately linear with the temperature Through this voltage difference, the temperature of the current detection position of the chip can be determined. In the embodiment of the present invention, in order to improve the detection accuracy and avoid the influence of the characteristics of the triode itself on the detection results, the temperature detection and the process of converting temperature information into voltage information are realized through two triodes: the first triode and the second triode As for the temperature detection area of the chip, the base-emitter voltage difference of the first triode is recorded as a PTAT (Proportional To Absolute Temperature) voltage, where PTAT is a voltage proportional to the absolute temperature; The difference between the base-emitter voltage of the two-transistor is recorded as the inverse absolute temperature (CTAT, Complementary To Absolute Temperature) voltage, where the CTAT voltage is a voltage that is inversely proportional to the absolute temperature; the PTAT voltage and the CTAT voltage are subtracted to obtain the is the voltage information related to the temperature of the detection area.

The embodiment of the present invention only takes the above process as an example, and is not limited thereto.

Step 102: Quantify and calibrate the voltage information;

In the embodiment of the present invention, when the temperature of multiple positions on the chip is detected in step 101, in this step, the method for quantifying and calibrating the voltage information includes: selecting at least one of the voltage information to quantify and calibrate; the specific implementation process In the polling method, the voltage information corresponding to the temperature information of multiple positions can be quantified or calibrated separately, or the voltage information corresponding to the temperature information of one position can be selected for quantitative calibration according to user configuration, or According to field experience, the voltage information corresponding to the temperature information of the more sensitive position is selected for quantification or calibration, and multiple voltage information can also be processed. Usually, the highest value, the lowest value, and the average value of the temperature of multiple locations can be obtained. The embodiment of the present invention does not limit the selection method.

In this step, firstly, the voltage information is subjected to analog-to-digital conversion and quantized into a digital signal. Since the quantized digital signal maintains an approximate linear relationship with the temperature, the precision and accuracy are relatively low. Therefore, further processing is required. The digital signal is calibrated; specifically, the bit stream generated after the voltage signal is quantized is counted by a digital technology device with an N+M bit width, and the bit stream is divided into a plurality of N+M bit wide digital signals, and the The digital signal with a bit width of N+M is divided by 2^M to obtain a digital signal with a bit width of N bits. According to the preset temperature and output signal linear relationship table, the N bit signal is calculated with the data in the preset temperature and output signal linear relationship table to generate a compensation difference. When the calibration function enables the control signal to be valid , that is, when the calibration function is turned on, the compensation difference is added to the output N bit signal and then output. In this way, the process of quantizing and calibrating the voltage signal is completed.

Step 103: Control the working state of the chip according to the quantized and calibrated voltage information.

According to the quantized and calibrated voltage information, controlling the working state of the chip includes: when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition, an interrupt is generated, and according to the quantized and calibrated voltage information, The temperature value corresponding to the calibrated voltage information controls the working state of the chip.

Wherein, the working state of the control chip includes but not limited to: performing temperature alarm, pausing/starting, and adjusting some processing functions of the chip.

In the embodiment of the present invention, multiple temperature thresholds can be preset to define multiple temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is the over-temperature protection threshold, and the second threshold to the sixth threshold The temperature value decreases gradually; for example, the first threshold is 140°C, the second threshold is 130°C, the third threshold is 120°C, the fourth threshold is 100°C, the fifth threshold is 80°C, the sixth threshold is 60°C, the The seventh threshold is 40°C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold of 140°C, an interrupt is generated to judge that the current chip temperature is too high, and adjust the working state of the chip, such as generating a temperature alarm, Suspend some or all processes, adjust chip processing speed, etc.; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the third threshold of 120°C and lower than the second threshold of 130°C, although the current chip temperature has not exceeded Temperature protection threshold, but the temperature is still high, at this time, an interrupt is generated, and the working status of the chip is adjusted, such as suspending some processes, adjusting the processing speed of the chip, etc. The specific temperature threshold ranges and their corresponding chip working states can be set according to the actual application environment. The embodiment of the present invention only takes the above examples as examples, and does not limit this scope.

In the embodiment of the present invention, the process described in steps 101-103 may be executed once or periodically according to the instruction. The temperature information detection can be performed on multiple areas of one chip at the same time, or the temperature information detection can be performed on multiple areas of multiple chips at the same time, and the temperature detection results of multiple chips can be processed together.

The embodiment of the present invention also provides a chip temperature detection and control device. FIG. 2 is a schematic diagram of the overall structure of the chip temperature detection and control device according to the embodiment of the present invention. As shown in FIG. 2 , the device includes: a temperature detector 21, a quantization Calibrator 22, main processor 23; Wherein,

The temperature detector 21 is used to detect the temperature information of the chip, and convert the temperature information into voltage information;

In the embodiment of the present invention, the temperature detector 21 is specifically used to: detect the temperature of at least one position on the chip, and convert the detected temperature information of at least one position into corresponding voltage information;

FIG. 3 is a schematic diagram of a detailed structure of a chip temperature detection and control device according to an embodiment of the present invention. As shown in FIG. The temperature information of at least one location is converted into corresponding voltage information; the temperature value is represented by the voltage information. For a chip with a larger area, the temperature information of multiple positions on the chip can be detected at the same time, as shown in Figure 3, four temperature detection components 211 are set: TM1, TM2, TM3, TM4, and four positions on the chip are detected simultaneously The temperature information of the detected 4 positions is converted into corresponding voltage information respectively;

In the embodiment of the present invention, the temperature detector 21 is specifically configured to convert the temperature information into voltage information according to the temperature characteristics of the I-V relationship of the triode.

Temperature will affect the current density of the triode. When the current density passing through the triode is different, the difference between the base-emitter voltage of the triode is different. Therefore, the difference between the base-emitter voltage of the triode is approximately linear with the temperature Through this voltage difference, the temperature of the current detection position of the chip can be determined. FIG. 4 is a schematic structural diagram of the temperature detection component 211 and the quantization calibrator 22 of the embodiment of the present invention. As shown in FIG. The process of realizing temperature detection and converting temperature information into voltage information: place the first transistor 2111 and the second transistor 2112 in the temperature detection area of the chip, at this time the base-emitter voltage of the first transistor 2111 The difference is recorded as a PTAT voltage, where PTAT is a voltage proportional to the absolute temperature; the second triode 2112 base-emitter voltage difference is recorded as a CTAT voltage, where the CTAT voltage is a voltage that is inversely proportional to the absolute temperature; The PTAT voltage is subtracted from the CTAT voltage to obtain voltage information related to the temperature of the detection area.

The embodiment of the present invention only takes the above process as an example, and is not limited thereto.

The quantization calibrator 22 is used to quantify and calibrate the voltage information;

In the embodiment of the present invention, when the temperature detector 21 detects the temperatures of multiple positions on the chip, the device further includes a control switch 24 for selecting to send at least one voltage information to the quantization calibrator. In the specific implementation process, the polling method can be used to quantify or calibrate the voltage information corresponding to the temperature information of multiple locations, or the voltage information corresponding to the temperature information of one location can be selected for quantitative calibration according to user configuration. , according to on-site experience, you can choose to quantify or calibrate the voltage information corresponding to the temperature information of the more sensitive position, and you can also process multiple voltage information. Usually, the highest value, the lowest value, and the average value of the temperature of multiple locations can be obtained. The embodiment of the present invention does not limit the selection method.

As shown in FIG. 4, the quantization calibrator 22 includes a quantization unit 221 and a calibration unit 222, wherein the quantization unit 221 is used to perform analog-to-digital conversion on the voltage information and quantize it into a digital signal. The signal and temperature maintain an approximate linear relationship, and the precision and accuracy are relatively low. Therefore, the calibration component 222 is required to further calibrate the digital signal; FIG. 5 is a schematic flow chart of a digital signal calibration method according to an embodiment of the present invention , as shown in FIG. 5 , the bit stream Bit stream generated after the voltage signal is quantized by the calibration unit 222 passes through a digital counter of N+M bit width to perform Digital Counter (2^(N+M)) counting, and the bit The stream is divided into a plurality of digital signals of N+M bit width, and the digital signal of the N+M bit width is divided by 2^M (divide by 2^M) to obtain the bit width as the digital signal mean value average of N bit; according to The preset temperature and output signal linear relationship table (ReferenceTable), calculate the N bit signal and the data in the preset temperature and output signal linear relationship table to generate compensation difference offset, when the calibration function is enabled, the control signal is valid In the case of , that is, when the calibration function is turned on, the compensation difference is added to the output N bit signal and then output. In this way, the process of quantizing and calibrating the voltage signal is completed.

The main processor 23 is configured to control the working state of the chip according to the quantized and calibrated voltage information;

In the embodiment of the present invention, the device further includes a controller 25, configured to generate an interrupt and notify the main processor 23 when the temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition;

The main processor 23 is specifically used to: control the working state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information; specifically, the main processor 23 For the corresponding temperature value, perform temperature alarm, pause/start, and adjust some processing functions of the chip;

In the embodiment of the present invention, the controller 25 is also used to control the working process of the temperature detector 21 , the quantization calibrator 22 and the control switch 24 . Specifically, the controller 25 is used to control the temperature detector 21, the quantization calibrator 22, and the control switch 24 to detect the temperature information as required, and then convert the detected temperature information into the apb bus format, and the controller 25 simultaneously A specific interrupt is generated, and the terminal information and temperature information are sent to the processor 23 for processing by the processor.

In the embodiment of the present invention, the temperature detection process of the controller 25 controlling the temperature detector 21, the quantization calibrator 22, and the control switch 24 can be set to a single detection or a periodic detection; Temperature information detection is performed in multiple areas, and temperature information detection can also be performed on multiple areas of multiple chips at the same time. When the detection is completed, a completion interrupt is generated to notify the processor, and the highest, lowest, and average temperature information of the detection point is reported. And compare the detected temperature with each threshold, when the chip temperature is higher than the over-temperature protection threshold, an interruption of the over-temperature protection is generated; when the chip temperature is in other temperature threshold intervals, a corresponding interruption is generated, and the processor 23 responds to the corresponding After the interruption, adjust the working state of the chip according to the working scene of the system, so that the temperature of the chip can be controlled within the set range.

Wherein, the single detection means that the processor 21 initiates a command to perform a temperature detection on at least one area. Periodic detection means that after the processor 21 presets the measurement period, the controller 25 controls the temperature detector 21, the quantization calibrator 22, and the control switch 24 to periodically perform temperature detection on the chip temperature position according to the preset period.

In the embodiment of the present invention, multiple temperature thresholds can be preset to define multiple temperature intervals; for example, seven temperature thresholds are set, wherein the first threshold is the over-temperature protection threshold, and the second threshold to the sixth threshold The temperature value decreases gradually; for example, the first threshold is 140°C, the second threshold is 130°C, the third threshold is 120°C, the fourth threshold is 100°C, the fifth threshold is 80°C, the sixth threshold is 60°C, the The seventh threshold is 40°C; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the first threshold of 140°C, the controller 25 generates an interrupt and notifies the main processor 23; the main processor 23 judges that the current chip temperature is too high. High, adjust the working state of the chip, such as generating a temperature alarm, suspending some or all processes, adjusting the processing speed of the chip, etc.; when the temperature value corresponding to the quantized and calibrated voltage information is higher than the third threshold 120°C, When the second threshold is 130°C, although the current chip temperature does not exceed the over-temperature protection threshold, the temperature is still very high. At this time, the controller 25 generates an interrupt and notifies the main processor 23, and the main processor 23 adjusts the working state of the chip, such as Suspend some processes, adjust chip processing speed, etc. The specific temperature threshold ranges and their corresponding chip working states can be set according to the actual application environment. The embodiment of the present invention only takes the above examples as examples, and does not limit this scope.

FIG. 6 is a schematic structural diagram of a chip temperature detection and control device according to Embodiment 2 of the present invention. As shown in FIG. , the temperature detector 21, the quantization calibrator 22, the control switch 24 and other components can be integrated in the temperature sensor 61, and the temperature sensor 61 is used to convert the temperature information of multiple positions in the chip into digital signals and send them to the outside. The controller 25 is used to control the temperature sensor 61 to detect temperature information as required, then convert the detected temperature information into apb bus format, and generate a specific interrupt at the same time, and send it to the processor 23 for processing by the processor.

In the embodiment of the present invention, the controller 25 controls the temperature sensor 61 to perform a temperature detection process, which can be set as a single detection, or can be set as a periodic detection; the temperature information detection can be performed on multiple regions of a chip at the same time, or can be Simultaneously detect the temperature information of multiple areas of multiple chips, generate a completion interrupt to notify the processor when the detection is completed, and report the highest, lowest and average temperature information of the detection points. And compare the detected temperature with each threshold, when the chip temperature is higher than the over-temperature protection threshold, an interruption of the over-temperature protection is generated; when the chip temperature is in other temperature threshold intervals, a corresponding interruption is generated, and the processor 23 responds to the corresponding After the interruption, adjust the working state of the chip according to the working scene of the system, so that the temperature of the chip can be controlled within the set range.

Wherein, the single detection is that the processor 21 initiates a command to perform a temperature detection on at least one area, and sends an interrupt to the processor after the detection is completed, and reports the maximum value, minimum value and average value of the detected temperature for periodic detection, which is After the processor 21 configures the measurement cycle, the controller 25 controls the temperature sensor 61 to periodically operate the chip temperature test point at the configured time point. The entire detection process will continue without stopping. When the detected information meets the state conditions set by the temperature detection point, an interrupt will be triggered to control the working state of the chip. For example, when the over-temperature protection interrupt is enabled, the over-temperature protection interrupt will be generated when the detection point temperature exceeds the first threshold of 140°C; when the low-temperature reporting interrupt is enabled, the detection point temperature will be lower than the seventh threshold of 40°C, and an interrupt report will be generated state.

In this way, the process of detecting the chip temperature information and adjusting the working state of the chip according to the chip temperature is completed.

Figure 7 is a schematic diagram of the layout structure of the temperature detection components 211 on the chip when the embodiment of the present invention detects the chip temperature. Near the block, the detected temperature information of the block with high energy consumption is used as the basis for adjusting the working state of the entire chip.

In the embodiment of the present invention, temperature information detection can be performed on multiple regions of multiple chips at the same time, and the temperature detection results of multiple chips can be collectively processed. Fig. 8 is a schematic structural diagram of multiple chip temperature acquisition devices according to an embodiment of the present invention. As shown in Fig. 8, a temperature detection component TM81 and a control switch SW82 are arranged inside chip A and chip C, and chip B is used as the main control chip to integrate temperature detection Component TM81, control switch SW82, quantization calibrator CP93, controller Ctl84 and main processor CPU85. The temperature information collected by chip A and chip C, under the control of the controller Ctl84, sends the temperature information of multiple detection points to the inside of chip B, and chip B sends the temperature information to the CPU according to the above processing method for the CPU to perform chip processing. Control of how you work.

In this way, by interconnecting multiple chips at the board level, while detecting the internal temperature information of each chip, the temperature information of each chip can be effectively shared, and at the same time, the temperature at the board level of the chip can be detected to realize the inside of the chip, between chips, Acquisition and detection of system board-level temperature information. Various early warnings, adaptive adjustments and control decisions related to products.

The present invention is the method and device for chip temperature detection and control described in the examples. The above-mentioned embodiment is only used as an example, but it is not limited thereto. Those of ordinary skill in the art should understand that it can still use the above-mentioned embodiments. Modifications are made to the technical solutions, or equivalent replacements are made to some or all of the technical features; these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention.

Claims (10)

1. A chip temperature detection and control method is characterized by comprising the following steps:

detecting temperature information of a chip, and converting the temperature information into voltage information;

quantizing and calibrating the voltage information;

and controlling the working state of the chip according to the quantized and calibrated voltage information.

2. The method of claim 1, wherein the detecting temperature information of the chip, and converting the temperature information into voltage information comprises: detecting the temperature of at least one position on the chip, and converting the detected temperature information of the at least one position into corresponding voltage information;

correspondingly, the method for quantizing and calibrating the voltage information comprises the following steps: at least one voltage information is selected for quantization and calibration.

3. The method of claim 1 or 2, wherein converting the temperature information into voltage information comprises:

and converting the temperature information into voltage information according to the temperature characteristic of the I-V relation of the triode.

4. The circuit of claim 1, wherein the controlling the operating state of the chip according to the quantized and calibrated voltage information comprises: and when the temperature value corresponding to the quantized and calibrated voltage information meets a preset condition, generating interruption, and controlling the working state of a chip according to the temperature value corresponding to the quantized and calibrated voltage information.

5. The circuit of claim 4, wherein the operating state of the control chip according to the temperature value corresponding to the quantized and calibrated voltage information includes but is not limited to: and according to the temperature value corresponding to the quantized and calibrated voltage information, performing temperature alarm, pause/start and adjustment on partial processing functions of the chip.

6. A chip temperature sensing and control apparatus, the apparatus comprising: the device comprises a temperature detector, a quantitative calibrator and a main processor; wherein,

the temperature detector is used for detecting the temperature information of the chip and converting the temperature information into voltage information;

the quantization calibrator is used for quantizing and calibrating the voltage information;

and the main processor is used for controlling the working state of the chip according to the quantized and calibrated voltage information.

7. The device according to claim 6, wherein the temperature detector is specifically configured to:

detecting the temperature of at least one position on the chip, and converting the detected temperature information of the at least one position into corresponding voltage information;

the apparatus also includes a control switch for selecting at least one voltage information to deliver to the quantization calibrator.

8. The device according to claim 6 or 7, characterized in that the temperature detector is particularly adapted to:

and converting the temperature information into voltage information according to the temperature characteristic of the I-V relation of the triode.

9. The apparatus of claim 6, further comprising a controller, configured to generate an interrupt and notify a main processor when a temperature value corresponding to the quantized and calibrated voltage information satisfies a preset condition;

the main processor is specifically configured to: and controlling the working state of the chip according to the temperature value corresponding to the quantized and calibrated voltage information.

10. The apparatus of claim 9, wherein the main processor is specifically configured to: and according to the temperature value corresponding to the quantized and calibrated voltage information, performing temperature alarm, pause/start and adjustment on partial processing functions of the chip.