CN106337162A - Deposition device and method of manufacturing display device using same - Google Patents

Abstract

A deposition device and a display device manufacturing method using the same are provided, the deposition device includes a first chamber defining first and second regions arranged along a first direction inside, a first chamber overlapping the first region inside the first chamber The pattern mask assembly, a first deposition source that discharges a deposition substance to the first pattern mask assembly while moving in a second direction intersecting the first direction inside the first chamber, and the first chamber along the first direction The chambers are spaced apart and define a second chamber with first and second regions aligned along the first direction, a second pattern mask assembly overlapping the second region inside the second chamber, a second pattern mask assembly inside the second chamber, The second deposition source that discharges the deposition substance to the second pattern mask assembly while moving in the second direction inside, and is arranged in the first chamber interior corresponding to the second area between the first pattern mask assembly and the first pattern mask assembly. A barrier between the second pattern mask assembly and the second deposition source is disposed between the deposition sources and corresponding to the first region inside the second chamber.

Description

Deposition device and method of manufacturing display device using same

technical field

The present invention relates to a method of manufacturing a deposition device and a display device using the same.

Background technique

Among light-emitting display devices, organic light-emitting display devices, as self-luminous display elements, have the advantages of wide viewing angle, excellent contrast ratio, and fast response speed, and thus are attracting attention as a new generation of display devices.

An organic light-emitting display device includes a light-emitting layer composed of an organic light-emitting substance between an anode and a cathode. As the anode and cathode voltages are applied to these electrodes, respectively, holes (holes) injected from the anode move to the light-emitting layer via the hole injection layer and the hole transport layer, while electrons pass from the cathode electrode via the electron injection layer and the electron transport layer. Moving to the light-emitting layer, electrons and holes recombine in the light-emitting layer. Excitons are generated by this recombination, and as the excitons transition from an excited state to a ground state, light is emitted from the light-emitting layer to display an image.

An organic light emitting display device includes a pixel defining film having an opening to expose an anode formed in units of pixels, and a hole injection layer, a hole transport layer, and a hole transport layer are formed on the anode exposed through the opening of the pixel defining film. layer, light emitting layer, electron transport layer, electron injection layer and cathode. Wherein, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer can be formed by various methods, one of which is a deposition method. As a deposition method, there are FMM deposition methods in which a fine metal mask (Fine Metal Mask; FMM) having the same size as the substrate is placed in close contact with the substrate, and a FMM deposition method in which a mask having a size smaller than that of the substrate is An SMS (Small Mask Scanning; small-scale mask scanning) deposition method, etc., in which deposition is performed while moving a substrate or a deposition source while being separated from the substrate.

Contents of the invention

On the one hand, when performing a deposition process on a large substrate by the FMM deposition method, a fine metal mask having the same size as that of the large substrate is used. However, since the fine metal mask has a large size, a bending phenomenon due to the self-weight of the fine metal mask may occur during the deposition process. This bowing phenomenon has the potential to distort the pattern of the thin film formed by depositing the deposition substance.

In addition, when performing a deposition process on a large substrate by the SMS deposition method, a small mask having a size smaller than that of the large substrate is used. However, a small mask used in a deposition process of a large substrate is not itself too small in size. Thus, there is a possibility that a bending phenomenon due to the self-weight of the small mask may occur, and it may be difficult to uniformly maintain the separation distance between such a small mask and a large substrate. Non-uniformity in the separation distance between the small mask and the large substrate has the potential to distort the pattern of the thin film formed by depositing the deposition substance.

In this regard, the technical problem to be solved by the present invention is to provide a deposition apparatus capable of reducing distortion occurring in a thin film pattern when a thin film is formed on a large substrate.

In addition, a technical problem to be solved by the present invention is to provide a method of manufacturing a display device using a deposition device capable of reducing distortion occurring on a thin film pattern when a thin film is formed on a large substrate.

The technical problems of the present invention are not limited to the technical problems mentioned above, and those skilled in the art can clearly understand the unmentioned technical problems or other technical problems through the following description.

A deposition apparatus according to an embodiment of the present invention for achieving the above technical problem includes a first chamber, a first pattern mask assembly, a first deposition source, a second chamber, a second pattern mask assembly, a second A deposition source and a baffle, wherein the first chamber defines a first area and a second area arranged along a first direction inside, and the first pattern mask assembly is arranged inside the first chamber as overlapping with the first region, the first deposition source is disposed inside the first chamber and is discharged toward the first pattern mask assembly side while moving in a second direction intersecting the first direction Depositing substances, the second chamber is arranged to be spaced from the first chamber along the first direction and is defined inside the second chamber in the same manner as the first chamber along the first direction. a first area and a second area arranged in one direction, the second pattern mask assembly is arranged inside the second chamber to overlap the second area, and the second deposition source is arranged in the second chamber inside and discharge the deposition material toward the side of the second pattern mask assembly while moving along the second direction, and the baffle plate is arranged in the first chamber in the interior of the first chamber corresponding to the second region. A pattern mask assembly is arranged between the above-mentioned first deposition source and between the above-mentioned second pattern mask assembly and the above-mentioned second deposition source corresponding to the above-mentioned first region inside the above-mentioned second chamber.

The above-mentioned deposition substance of the above-mentioned first deposition source and the above-mentioned deposition substance of the above-mentioned second deposition source may be the same.

The second deposition source is configurable to discharge the deposition substance after the deposition substance is discharged by the first deposition source.

In the first direction, the length of the first pattern mask assembly may be smaller than the length of the first deposition source.

The first pattern mask assembly may be arranged to be in close contact with a region of the substrate that overlaps the first region of the substrate introduced into the first chamber.

The second pattern mask assembly may be arranged to be in close contact with a substrate region overlapping the second region of the substrate introduced into the second chamber.

When there are multiple first regions and multiple second regions inside the first chamber, the second regions may be arranged between adjacent first regions.

When there are multiple first regions and multiple second regions inside the first chamber, the first regions and the second regions can be arranged in a matrix form and in the first direction and the second direction are arranged alternately.

In addition, the deposition device may further include the above-mentioned first chamber, the above-mentioned first pattern mask assembly, the above-mentioned first deposition source, the above-mentioned second chamber, the above-mentioned second pattern mask assembly and the above-mentioned second Another deposition part corresponding to the deposition part of the deposition source.

A method of manufacturing a display device according to an embodiment of the present invention for achieving the above-mentioned technical problem includes the following steps: inside a first cavity defining a first region and a second region arranged along a first direction, arranging a first pattern mask assembly overlapping the first region; introducing a substrate defining a first substrate region and a second substrate region into the interior of the first chamber, and placing the first substrate The area is in close contact with the above-mentioned first pattern mask assembly; while moving the first deposition source arranged inside the above-mentioned first chamber along the second direction intersecting with the above-mentioned first direction, discharging toward the above-mentioned substrate side Depositing a substance to form a pattern layer in the above-mentioned first substrate region; being arranged to be separated from the above-mentioned first chamber along the above-mentioned first direction and defined inside in the same manner as the above-mentioned first chamber along the Inside the second chamber of the first region and the second region arranged in the first direction, a second pattern mask assembly is arranged overlapping the second region; the substrate is introduced into the second chamber , and the second substrate region is in close contact with the second pattern mask assembly; and while moving the second deposition source arranged inside the second chamber along the second direction, toward the substrate The deposition substance is discharged from the bottom side to form a pattern layer on the above-mentioned second substrate region.

The aforementioned pattern layer may include at least one of a hole transport layer and a light emitting layer of a light emitting display device.

The above-mentioned deposition substance of the above-mentioned first deposition source and the above-mentioned deposition substance of the above-mentioned second deposition source may be the same.

The step of discharging the above-mentioned deposition material using the above-mentioned second deposition source may be performed after the step of discharging the above-mentioned deposition material using the above-mentioned first deposition source.

In the first direction, the length of the first pattern mask assembly may be smaller than the length of the first deposition source.

When there are multiple first regions and multiple second regions inside the first chamber, the second regions may be arranged between adjacent first regions.

When there are multiple first regions and multiple second regions inside the first chamber, the first regions and the second regions can be arranged in a matrix form and in the first direction and the second Alternately arranged in the direction.

In addition, the manufacturing method of the above-mentioned display device may further include: using and including the above-mentioned first chamber, the above-mentioned first pattern mask assembly, the above-mentioned first deposition source, the above-mentioned second chamber, and the above-mentioned second pattern mask assembly Another deposition part corresponding to the deposition part of the above-mentioned second deposition source forms a pattern layer on another substrate.

Specific matters of other embodiments are included in the detailed description and drawings.

According to the embodiments of the present invention, at least the following effects are achieved.

According to the deposition apparatus of an embodiment of the present invention, it is possible to reduce distortion occurring in a thin film pattern when a thin film is formed on a large substrate.

Effects according to the present invention are not limited to those exemplified above, and more effects are included in this specification.

Description of drawings

FIG. 1 is a system configuration diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view schematically illustrating the first deposition chamber of FIG. 1 .

FIG. 3 is a perspective view illustrating the open mask assembly of FIG. 2 .

FIG. 4 is a perspective view schematically illustrating an internal structure of the first deposition chamber of FIG. 2 .

FIG. 5 is a cross-sectional view schematically illustrating an internal structure of the first deposition chamber of FIG. 2 .

FIG. 6 is a plan view schematically illustrating the third deposition chamber of FIG. 1 .

FIG. 7 is a perspective view of the first pattern mask assembly of FIG. 6 .

FIG. 8 is an enlarged view of part 'A' of FIG. 7 .

FIG. 9 is a perspective view schematically illustrating an internal structure of the third deposition chamber of FIG. 6 .

FIG. 10 is a cross-sectional view schematically illustrating the internal structure of the third deposition chamber of FIG. 6 .

FIG. 11 is a plan view illustrating a process of forming a common layer on a substrate within the first deposition chamber illustrated in FIG. 2 .

FIG. 12 is a cross-sectional view illustrating an example after forming a common layer on a substrate in the first deposition chamber of FIG. 2 .

13 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a first region of the first chamber in the first chamber of the third deposition chamber illustrated in FIG. 6 .

14 is a cross-sectional view illustrating an example after forming a pattern layer on a portion of a substrate corresponding to a first region of the first chamber in the first chamber of the third deposition chamber illustrated in FIG. 6 .

15 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a second region of the second deposition chamber in the second chamber of the third deposition chamber illustrated in FIG. 6 .

16 is a cross-sectional view illustrating an example after forming a pattern layer on a portion of a substrate corresponding to a second region of the second deposition chamber in the second chamber of the third deposition chamber illustrated in FIG. 6 .

FIG. 17 is a cross-sectional view of a light emitting display device fabricated using a deposition apparatus according to an embodiment of the present invention.

FIG. 18 is a plan view schematically illustrating a third deposition chamber in a deposition apparatus according to another embodiment of the present invention.

19 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a first region of the first chamber in the first chamber of the third deposition chamber of FIG. 18 .

20 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a second region of the second chamber in the second chamber of the third deposition chamber of FIG. 18 .

FIG. 21 is a system configuration diagram schematically illustrating a deposition apparatus according to still another embodiment of the present invention.

detailed description

The advantages and features of the present invention and a method of achieving the advantages and features will be clarified with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be realized in various forms different from each other. provided by those skilled in the art, and the present invention is only defined by the scope of the claims.

When an element or layer is referred to as being "on" another element or layer, the element or layer is directly on the other element or layer or with the other layer or other element interposed therebetween. The same reference numerals designate the same constituent elements throughout the specification.

It should be clear that although first, second, etc. are used to describe various constituent elements, these constituent elements are not limited by these terms. These terms are only used to distinguish one element from other elements. Therefore, it should be clarified that the first constituent element mentioned hereinafter may also be referred to as the second constituent element without departing from the technical idea of the present invention.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a system configuration diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , a deposition apparatus 500 according to an embodiment of the present invention includes a loading part 100 , a deposition part 300 and an unloading part 400 .

The loader 100 is configured to load a plurality of substrates S before depositing a deposition substance. Any one of the plurality of substrates S loaded on the loading part 100 may be supported by a carrier C such as an electrostatic chuck, and moved to the deposition part 300 via the moving space MS. The carrier C is movable along a first direction X of FIG. 1 and a second direction Y intersecting the first direction X. Referring to FIG. The substrate S may be a substrate for a display device, and a large-area substrate such as a mother glass defining a plurality of substrate regions for forming a plurality of display devices may be used. Although eight quadrangles indicated by dotted lines on the substrate S in FIG. 1 indicate eight substrate regions where a display device is to be formed, the substrate S is not limited by such a number.

The deposition part 300 is configured to be able to perform a process of depositing a deposition substance on the substrate S. Referring to FIG. The deposition part 300 includes at least one deposition chamber, for example, may include a first deposition chamber 310, a second deposition chamber 320, a third deposition chamber 330, a fourth deposition chamber 340, The fifth deposition chamber 350 , the sixth deposition chamber 360 and the seventh deposition chamber 370 . The first deposition chamber 310, the sixth deposition chamber 360 and the seventh deposition chamber 370 may be deposition chambers for forming a common layer, while the second deposition chamber 320, the third deposition chamber 330, the fourth deposition chamber The chamber 340 and the fifth deposition chamber 350 may be deposition chambers for forming a patterned layer, wherein the common layer is a thin film without an additional patterned structure formed by depositing a deposition substance onto the substrate S, and the patterned layer A layer is a thin film having a specific pattern formed by depositing a deposition substance onto a substrate S. However, the present invention is not limited thereto. The deposition part 300 will be described in detail below.

The unloading part 400 is configured to separate the substrate S that has passed through the deposition part 300 from the carrier C and to load the substrate S separated from the carrier C. Referring to FIG. The substrate S loaded in the unloading part 400 may be in a standby state for performing other processes.

Next, the deposition unit 300 will be described in detail by taking the first deposition chamber 310 and the third deposition chamber 330 as examples.

2 is a plan view schematically illustrating the first deposition chamber of FIG. 1 , FIG. 3 is a perspective view illustrating the open mask assembly of FIG. 2 , and FIG. 4 is a schematic diagram illustrating the interior of the first deposition chamber of FIG. 2 A perspective view of the structure, and FIG. 5 is a cross-sectional view schematically illustrating the internal structure of the first deposition chamber of FIG. 2 .

Referring to FIGS. 2 to 5 , the first deposition chamber 310 provides a space for depositing deposition substances onto the substrate S to form a common layer. The first deposition chamber 310 may maintain a vacuum state while depositing a deposition substance on the substrate S. Referring to FIG. An open mask assembly OMA and a deposition source 312 may be disposed inside the first deposition chamber 310 .

The open mask assembly OMA, as a part closely attached to the substrate S introduced into the inside of the first deposition chamber 310 using the carrier C, may include the open mask OM and the frame FR. The open mask OM may be formed in a ring shape defining an opening corresponding to all of a plurality of substrate regions in the substrate S where a plurality of display devices are to be formed. The frame FR as a member supporting the open mask OM may have a shape corresponding to the open mask OM. Adhesion of the open mask assembly OMA to the substrate S can be achieved by combining the carrier C and the frame FR in a state where the substrate S is placed over the open mask OM. The coupling of the carrier C and the frame FR can be realized by a physical method using bolts and nuts, a method using magnetic force, or the like.

Such an open mask assembly OMA including the open mask OM and the frame FR can prevent deposition substances from leaking to unnecessary regions when forming a common layer without a pattern structure on the substrate S. Referring to FIG. In addition, a mask stage ST1 supporting the open mask assembly OMA may be disposed below the open mask assembly OMA.

The deposition source 312 serves as a component for discharging the deposition substance 317 toward the side of the substrate S close to the open mask assembly OMA, which includes a crucible 315 filled with the deposition substance 317 inside, arranged to cover the crucible 315 and heat the crucible 315 A heater 316 to vaporize a deposition substance 317 , and a nozzle portion 314 arranged above the crucible 315 so that a deposition source nozzle 318 faces toward the substrate S side.

Such a deposition source 312 can discharge vaporized deposition substances to the substrate S side while moving in the second direction Y under the substrate S closely attached to the open mask assembly OMA. Accordingly, a common layer without a pattern structure can be formed on the entire substrate S. As shown in FIG. For example, in the case where the substrate S is a substrate for a light-emitting display device, the hole injection layer (30 of FIG. 17 ) may be formed on the entire surface of the pixel defining film (20 of FIG. 17 ) regardless of the pixels, Wherein the pixel defining film is formed on the substrate S.

6 is a plan view schematically illustrating the third deposition chamber of FIG. 1, FIG. 7 is a perspective view of the first pattern mask assembly of FIG. 6, FIG. 8 is an enlarged view of part "A" of FIG. 7, and FIG. A perspective view schematically illustrating the internal structure of the third deposition chamber of FIG. 6 , and FIG. 10 is a cross-sectional view schematically illustrating the internal structure of the third deposition chamber of FIG. 6 .

Referring to FIGS. 6 to 10 , the third deposition chamber 330 provides a space for depositing a deposition substance onto the substrate S to form a pattern layer. The third deposition chamber 330 may maintain a vacuum state while depositing a deposition substance on the substrate S. Referring to FIG. The third deposition chamber 330 may include a first chamber 331 and a second chamber 332 . In addition, the third deposition chamber 330 may include a third chamber 333 .

The first chamber 331 provides a space for depositing a deposition substance on at least one of the substrate regions S1 - S8 in the substrate S where a plurality of display devices are to be formed to form a pattern layer. For this, a case where the first chamber 331 includes a first area DA1 and a second area DA2 is illustrated in FIG. 6 .

The first area DA1 and the second area DA2 may be arranged along a direction (ie, a first direction X) intersecting a moving direction of the first deposition source 335 to be described below. The first area DA1 may be an area overlapping with the substrate areas S1, S2, S5, S6 of the substrate S introduced into the first chamber 331 to deposit deposition substances, and the second area DA2 may be an area overlapping with the substrate S introduced into the first chamber 331. In the substrate S in a chamber 331 , the substrate regions S3 , S4 , S7 , and S8 where no deposition substance is deposited overlap with each other. Here, in the case where the first area DA1 is plural and the second area DA2 is plural, the second area DA2 may be arranged to be between the two first areas DA1.

The first chamber 331 may maintain a vacuum state while depositing the deposition substance 335c on the substrate S. Referring to FIG. Inside the first chamber 331, a first pattern mask assembly PMA1 and a deposition source 335 may be disposed.

The first pattern mask assembly PMA1 is arranged at the first area DA1 of the first chamber 331 and is connected with the substrate S introduced into the inside of the first chamber 331 using the carrier C and the first mask assembly PMA1 of the first chamber 331. The substrate regions S1 , S2 , S5 , S6 overlapping the region DA1 are in close contact. The first pattern mask assembly PMA1 may include a first pattern mask PM1 and a first frame FR1.

The first pattern mask PM1 may be configured to include a plurality of metal plates (for example, a plurality of strip-shaped bodies), wherein the plurality of metal plates include a region DA1 overlapping with the first region DA1 of the first chamber 331 in the substrate S. The deposition openings SP corresponding to the pixels in the substrate regions S1 , S2 , S5 , and S6 . The deposition opening SP may be arranged to correspond to the red pixel R where the red light emitting layer is to be formed, so that a pattern layer (for example, a red light emitting layer) is formed in the substrate S overlapping the first region DA1 of the first chamber 331. In the substrate regions S1, S2, S5, S6.

The first frame FR1 as a member supporting the first pattern mask PM1 may have a frame opening OP exposing the deposition opening SP of the first pattern mask PM1. When there are two substrate regions S1 and S2 overlapping with one first region DA1 of the first chamber 331 in the substrate S, there may be two frame openings OP of the first frame FR1, and at this time, the first The frame FR1 may include a ring-shaped edge portion T and a division portion D connecting sides of the edge portion T opposite to each other to define two openings OP. Adherence of the first pattern mask assembly PMA1 and the substrate S may be achieved by combining the carrier C with the first frame FR1 in a state where the substrate S is disposed over the first pattern mask PM1. The combination of the carrier C and the first frame FR1 may be realized by a physical method using bolts and nuts, a method using magnetic force, or the like.

Such a first pattern mask assembly PMA1 including the first pattern mask PM1 and the first frame FR1 enables a pattern layer to be formed on the substrate S when the deposition substance is discharged toward the substrate S side through the first deposition source 335. At specific parts of the substrate regions S1 , S2 , S5 , S6 overlapping with the first region DA1 of the first cavity 331 , for example, a red light emitting layer is formed at the red pixel R in a light emitting display device. In addition, in the first direction X, the length of the first pattern mask assembly PMA1 may be smaller than the length of the first deposition source 335 . In several embodiments, in the first direction X, the length of the first pattern mask assembly PMA1 may also be greater than the length of the first deposition source 335 .

The first deposition source 335 serves as a component that discharges the deposition substance 335c toward the side of the substrate S that is in close contact with the first pattern mask assembly PMA1, and includes a crucible 335a filled with the deposition substance 335c, arranged to cover the crucible 335a and A heater 335b that heats the crucible 335a to vaporize the deposition substance 335c, and a nozzle portion 335d that is disposed above the crucible 335a and that directs the deposition source nozzle 335e toward the substrate S side.

Such a first deposition source 335 can discharge the vaporized deposition substance 335c toward the substrate S side while moving under the substrate S closely attached to the first pattern mask assembly PMA1 in the second direction Y. Thereby, a pattern layer can be formed at specific portions of the substrate regions S1 , S2 , S5 , S6 overlapping with the first region DA1 of the first chamber 331 in the substrate S. Referring to FIG. For example, a red light emitting layer ( 50 of FIG. 17 ) may be formed in openings 21 corresponding to red pixels among openings 21 of a pixel defining film ( 20 of FIG. 17 ) formed on a substrate 5 of a light emitting display device.

In addition, a baffle 337 may be arranged in the second area DA2 of the first chamber 331 to prevent the deposition substance 335c from being deposited on the substrate S in the substrate areas S3, S4 overlapping the second area DA2 of the first chamber 331. , S7, and S8. The form of the baffle 337 is not limited to the form shown in FIG. 9 .

The second chamber 332 is provided for depositing the deposition substance into the substrate regions S1-S8 of the substrate S where a plurality of display devices are to be formed, except for the substrate regions S1 and S2 where the pattern layer is formed in the first chamber 331 , S5, and S6 in the rest of the substrate regions S3, S4, S7, and S8 to form spaces for the pattern layer. For this, a case where the second chamber 332 includes the first area DA1 and the second area DA2 is illustrated in FIG. 6 . The first area DA1 and the second area DA2 of the second chamber 332 may be distinguished in the same manner as the first area DA1 and the second area DA2 of the first chamber 331 .

That is, the first area DA1 and the second area DA2 of the second chamber 332 can be aligned in a direction (ie, the first direction X) intersecting with a moving direction of the second deposition source 336 to be described below. The first area DA1 of the second chamber 332 may be an area overlapping with the substrate areas S1, S2, S5, and S6 introduced into the substrate S of the second chamber 332 where deposition substances are not deposited, and the second area DA2 It may be a region overlapping with the substrate regions S3 , S4 , S7 , S8 of the substrate S introduced into the second chamber 332 to deposit the deposition substance. Here, in the case where the first area DA1 is plural and the second area DA2 is plural, the second area DA2 may be arranged to be between the two first areas DA1.

The second chamber 332 may maintain a vacuum state while depositing the deposition substance on the substrate S. Referring to FIG. Inside the second chamber 332, a second pattern mask assembly PMA2 and a deposition source 336 may be disposed.

The second pattern mask assembly PMA2 is configured in the same manner as the first pattern mask assembly PMA1. However, the second pattern mask assembly PMA2 is disposed in the second area DA2 of the second chamber 332, and is related to the substrate S introduced into the inside of the second chamber 332 using the carrier C and the substrate S of the second chamber 332. The overlapping substrate regions S3 , S4 , S7 , S8 of the second region DA2 are in close contact.

Such a second pattern mask assembly PMA2 can cause the pattern layer in the substrate S to overlap with the second region DA2 of the second chamber 332 when the deposition substance is discharged toward the substrate S side by the second deposition source 336 At certain parts of the substrate regions S3 , S4 , S7 , S8 , for example, in a light-emitting display device, a red light-emitting layer is formed at a red pixel.

The second deposition source 336 is configured identically to the first deposition source 335 . However, the second deposition source 336 may be configured to discharge the deposition material after the deposition material 335 c is discharged using the first deposition source 335 . The deposition substance of the second deposition source 336 may be the same as the deposition substance 335c of the first deposition source 335 . The second deposition source 336 can discharge vaporized deposition substances toward the substrate S side while moving in the second direction Y under the substrate S closely attached to the second pattern mask assembly PMA2. Thereby, a pattern layer can be formed at specific portions of the substrate regions S3 , S4 , S7 , S8 overlapping with the second region DA2 of the second chamber 332 in the substrate S. Referring to FIG. For example, a red light emitting layer (50 in FIG. 17 ) may be formed in openings 21 corresponding to red pixels in the pixel defining film (20 in FIG. 17 ) formed on the substrate S4 of the light emitting display device. In addition, in the first direction X, the length of the second pattern mask assembly PMA2 may be smaller than the length of the second deposition source 336 . In several embodiments, in the first direction X, the length of the second pattern mask assembly PMA2 may also be greater than the length of the second deposition source 336 .

A baffle (337 in FIG. 9 ) may be configured in the first area DA1 of the second chamber 332 to prevent deposition of deposition substances into the substrate area S1 overlapping the first area DA1 of the second chamber 332 in the substrate S. , S2, S5, and S6.

The third chamber 333 is configured to be able to provide the same structure as the first pattern mask assembly PMA1 or the second pattern mask assembly PMA2 when it is necessary to replace the first pattern mask assembly PMA1 or the second pattern mask assembly PMA2. The size and pattern of the exchange mask assembly SPMA.

As described above, without affecting the arrangement of the first pattern mask assembly PMA1 and the second pattern mask assembly PMA2 having a size smaller than that of the substrate S, and in the first pattern mask assembly PMA1 and the substrate In the state where the bottom S is in close contact and the second pattern mask assembly PMA2 and the substrate S are in close contact, through the first chamber 331 and the second chamber 332, the deposition of the deposition substance is used to form the pattern defined in the substrate S. The pattern layers in the substrate regions S1-S8 of a plurality of display devices are to be formed, therefore, the distortion of the pattern layers formed on the substrate S due to the bending phenomenon caused by the self-weight of the mask in the FMM method can be reduced, In addition, it is possible to reduce the distortion of the pattern layer formed on the substrate S due to the uneven separation distance between the mask and the substrate S in the SMS method.

Next, a method for manufacturing a display device using the deposition device 500 according to an embodiment of the present invention will be described.

11 is a plan view showing a process of forming a common layer on a substrate in the first deposition chamber illustrated in FIG. 2 , and FIG. 12 is a plan view showing forming a common layer on a substrate in the first deposition chamber of FIG. 2 13 is a cross-sectional view showing that a pattern layer is formed on a portion of a substrate corresponding to a first region of the first chamber in the first chamber of the third deposition chamber illustrated in FIG. 6 14 is a plan view showing the process of forming a pattern layer on a portion of the substrate corresponding to the first region of the first chamber in the first chamber of the third deposition chamber illustrated in FIG. 6 15 is a cross-sectional view showing that a pattern layer is formed on a portion of the substrate corresponding to the second region of the second deposition chamber in the second chamber of the third deposition chamber illustrated in FIG. 6 and FIG. 16 is a plan view showing that a pattern is formed on a portion of a substrate corresponding to a second region of the second deposition chamber in the second chamber of the third deposition chamber illustrated in FIG. 6 Cutaway view of an example after layers.

As for the method of manufacturing the display device, the method of manufacturing the light-emitting display device will be described as an example. In addition, a process of forming a common layer (for example, the hole injection layer 30 ) and a pattern layer (for example, the light emitting layer 50 ) in the method of manufacturing the light emitting display device will be described.

First, referring to FIG. 11 , the substrate S supported by the carrier C is introduced into the first deposition chamber 310 and closely attached to the open mask assembly OMA. Subsequently, the vaporized deposition substance is discharged toward the substrate S side while moving the deposition source 312 in the second direction Y.

At this time, as shown in FIG. 12 , the hole injection layer 30 is formed on the entire surface of the pixel defining film 20 including the first electrode 10 formed in units of each pixel regardless of the pixels. The substrate (S in FIG. 11 ) is formed to include an opening 21 exposing the first electrode 10 . Only the substrate region S2 and the substrate region S4 in the substrate (S of FIG. 11 ) are illustrated in FIG. 12 . The substrate regions S1-S8 of the substrate (S in FIG. 11 ) can be individualized in the subsequent cutting process, and the substrate region S2 can become the substrate of a light-emitting display device, while the substrate region S4 can become the substrate of another light-emitting display device. The substrate of the display device.

Next, referring to FIG. 13 , the substrate S supported by the carrier (C in FIG. 11 ) is introduced into the inside of the first chamber 331 of the third deposition chamber 330, and is combined with the first chamber 331 arranged in the first chamber 331. The first pattern mask member PMA1 in the area (DA1 of FIG. 6 ) is in close contact. Subsequently, the vaporized deposition substance 335 c is discharged toward the substrate S side while moving the first deposition source 335 in the second direction Y. Referring to FIG.

At this time, as shown in FIG. 14, above the hole injection layer 30 in the substrate region (for example, S2) in the substrate (S of FIG. 13) closely attached to the first pattern mask member PMA1, The hole transport layer 40 is formed inside the opening 21 of the pixel defining film 20 , and the light emitting layer 50 is formed on the hole transport layer 40 . The light emitting layer 50 illustrated in FIG. 14 may be a red light emitting layer disposed at a red pixel.

Next, referring to FIG. 15 , the substrate S supported by the carrier (C in FIG. 11 ) is introduced into the inside of the second chamber 332 of the third deposition chamber 330, and is combined with the second chamber 332 arranged in the second chamber 332. The second pattern mask assembly PMA2 in the area (DA2 of FIG. 6 ) is in close contact. Subsequently, the vaporized deposition substance 335c is discharged toward the substrate S side while the second deposition source 336 is moved in the second direction Y.

At this time, as shown in FIG. 16 , the light emitting layer 50 is formed on the hole transport layer 40 in the substrate (S of FIG. 15 ) in close contact with the second pattern mask member PMA2. The hole injection layer 30 in the attached substrate region (for example, S4 ) is formed inside the opening portion 21 of the pixel defining film 20 . The light emitting layer 50 illustrated in FIG. 16 may be a red light emitting layer disposed at a red pixel.

In addition, although not shown, the hole transport layer 40 is formed in the same manner as the method for forming the light emitting layer 50 before the light emitting layer 50 is formed. In addition, although the light-emitting layer 50 has been described above as a red light-emitting layer, it may be a green light-emitting layer arranged at a green pixel and a blue light-emitting layer arranged at a blue pixel. The respective red, green and blue emitting layers may be formed in respective deposition chambers. In addition, although not shown, after forming the light emitting layer 50, the electron transport layer (60 in FIG. 17), the electron injection layer (70 in FIG. formed in the same manner.

FIG. 17 is a cross-sectional view of a light emitting display device fabricated using a deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 17, a light-emitting display device fabricated using a deposition apparatus 500 according to an embodiment of the present invention includes: a substrate 5, a first electrode 10, a pixel-defining film 20, a hole injection layer 30, a hole transport layer 40, a light-emitting layer 50 , electron transport layer 60 , electron injection layer 70 and second electrode 80 .

The substrate 5 can be formed of a transparent insulating substance. For example, substrate 5 may be formed of glass, quartz, ceramics, plastic, or the like. The substrate 5 may be in the shape of a flat plate. According to several embodiments, the substrate 5 may also be formed of a material that can be easily bent by external force. The substrate 5 can support further components arranged on the substrate 5 . Although not shown, the substrate 5 may include a plurality of thin film transistors. Drains of at least some of the plurality of thin film transistors can be electrically connected to the first electrode 10 .

The first electrode 10 may be arranged on the substrate 5 in units of individual pixels. The first electrode 10 may be an anode that receives a signal applied to a drain of the thin film transistor to supply holes to the light emitting layer 50 or a cathode that supplies electrons.

The first electrode 10 can be used as a transparent electrode, a reflective electrode or a semi-transmissive electrode. When the first electrode 10 is used as a transparent electrode, the first electrode 10 can be made of indium tin oxide (Indium Tin Oxide; ITO), indium zinc oxide (IndiumZinc Oxide; IZO), zinc oxide (Zinc Oxide; ZnO) or In ₂ O ₃ is formed. When the first electrode 10 uses a reflective electrode, the first electrode 10 can be formed on it after forming a reflective film by Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and their compounds. ITO, IZO, ZnO or In ₂ O ₃ to form. When the first electrode 10 is used as a semi-transmissive electrode, the first electrode 10 can be made of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and their compounds to form a reflective electrode with a thin thickness. The film is formed by forming ITO, IZO, ZnO or In ₂ O ₃ thereon. The first electrode 10 may be formed by a photolithography method, but is not limited thereto.

The pixel defining film 20 is arranged on the substrate 5 and has an opening portion 21 exposing the first electrode 10 , and divides individual pixels on the substrate 5 . The pixel defining film 20 may be made of an insulating substance. For example, the pixel defining film 20 may be configured to include at least one selected from benzocyclobutene (Benzocyclobutene; BCB), polyimide (polyimide; PI), polyamide (polyamide; PA), acrylic resin, and phenolic resin. an organic substance. As another example, the pixel defining film 20 may also be configured to include an inorganic substance such as silicon nitride or the like. The pixel defining film 20 may be formed through a photolithography process, but is not limited thereto.

The hole injection layer 30 is formed on the first electrode 10 exposed through the opening portion 21 of the pixel defining film 20 , and it may also be formed to cover the entirety of the pixel defining film 20 . The hole injection layer 30 serves as a buffer layer lowering the potential barrier between the first electrode 10 and the hole transport layer 40, which functions to allow holes supplied from the first electrode 10 to be easily injected into the hole transport layer 40 . The hole injection layer 30 can be made of, for example, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine (MTDATA(4,4',4"-tris(3-methylphenylphenylamino)triphenylamine)) , copper phthalocyanine (CuPc(copper phthalocyanine)) or poly(3,4-ethylenedioxythiophene/polystyrene sulfonate) (PEDOT/PSS(poly(3,4-ethylenedioxythiophene,polystyrene sulfonate))) and other organic compounds, but not limited thereto.

The hole transport layer 40 is formed on the hole injection layer 30 . The hole transport layer 40 functions to transfer holes supplied through the hole injection layer 30 to the light emitting layer 50 . This hole transport layer 40 can be made of, for example, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-bi-phenyl-4,4'-diamine)) or N,N'-di(naphthalene-1-yl )-N,N'-diphenyl-benzidine (NPB(N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine)) and other organic compounds, but not limited to this.

The light emitting layer 50 is formed on the hole transport layer 40 . The light emitting layer 50 emits light by recombining holes supplied from the first electrode 10 and electrons supplied from the second electrode 80 . In more detail, when holes and electrons are supplied to the light emitting layer 50, the holes are combined with the electrons to generate excitons, and the excitons emit light while changing from an excited state to a ground state. Such a light emitting layer 50 may include a red light emitting layer emitting red, a green light emitting layer emitting green, and a blue light emitting layer emitting blue.

The red light emitting layer may be formed to include a red light emitting substance, or to include a host and a red dopant. The main body of the red light-emitting layer can use, for example, three (8-hydroxyquinolinato) aluminum (Alq ₃ (tris(8-hydroxyquinolinato)aluminium)), 4,4'-N,N'-dicarbazole-biphenyl ( CBP(4,4'-N,N'-dicarbazol-biphenyl)), poly(N-vinylcarbazole) (PVK(ploy(n-vinylcarbazole))), 9,10-di(naphthalene-2-yl ) anthracene (AND(9,10-Di(naphthyl-2-yl)anthracene)), 1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene (TPBI(1,3,5 -tris(N-phenylbenzimidazol-2-yl)benzene)), 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN(3-tert-butyl-9,10-di(naphth -2-yl)anthracene)), distyrylarylene (DSA (distyrylarylene)), etc., but not limited thereto. In addition, the red dopant may utilize PtOEP, Ir(piq) ₃ , Btp ₂ Ir(acac), etc., but is not limited thereto.

The green light emitting layer may be formed to include a green light emitting substance, or to include a host and a green dopant. In addition, the green dopant may utilize Ir(ppy) ₃ , Ir(ppy) ₂ (acac), Ir(mpyp) ₃ , etc., but is not limited thereto.

The blue light emitting layer may be formed to include a blue light emitting substance, or to include a host and a blue dopant. The host of the red light-emitting layer can be used as the host of the blue light-emitting layer. In addition, the blue dopant can utilize F ₂ Irpic, (F ₂ ppy) ₂ Ir(tmd), Ir(dfppz) ₃ , ter-fluorene, 4,4'-bis(4-di p-tolylaminostyryl)biphenyl (DPAVBi(4,4'-bis(4-di-p-tolylaminostyryl)biphenyl)), 2,5,8,11-tetra-tert-butylperylene (TBPe (2,5,8,11-tetra-tert-butyl perylene)), etc., but not limited thereto.

The electron transport layer 60 is formed on the light emitting layer 50 and functions to transport electrons supplied from the second electrode 80 to the light emitting layer 50 . This electron transport layer 60 can use organic compounds such as 4,7-diphenyl-1,10-o-phenanthroline (Bphen(4,7-diphenyl-1,10-phenanthroline)), bis(2-methyl Base-8-hydroxyquinolinato) 4-phenylphenol aluminum (III) (BAlq (aluminum (III) bis (2-methyl-8-hydroxyquinolinato) 4-phenylphenolate)), tris (8-hydroxyquinolinato) aluminum ( Alq ₃ (Tris(8-quinolinolato)aluminum)), beryllium bis(10-hydroxybenzoquinoline) (Bebq ₂ (berylliumbis(benzoquinolin-10-olate)), 1,3,5-tris(N-phenyl Materials such as benzimidazol-2-yl)benzene (TPBI (1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene)), but not limited thereto.

The electron injection layer 70 is formed on the electron transport layer 60, and serves as a buffer layer lowering the potential barrier between the electron transport layer 60 and the second electrode 80, which functions to allow electrons supplied from the second electrode 80 to be easily injected into the electron transport layer. The role of layer 60. Such an electron injection layer 70 may be formed of, for example, LiF or CsF, but is not limited thereto.

The second electrode 80 may be disposed over the electron injection layer 70 . The second electrode 80 may be formed of the same material as that of the first electrode 10 , but not necessarily limited thereto. According to several embodiments, the second electrode 80 may be a common electrode disposed on a plurality of pixels included in the light emitting display device. According to several embodiments, the second electrode 80 may also be disposed on the entire surface above the electron injection layer 70 and above the pixel defining film 20 . Light emission of the light emitting layer 50 can be controlled by current flowing between the first electrode 10 and the second electrode 80 .

Next, a deposition apparatus according to another embodiment of the present invention will be described.

FIG. 18 is a plan view schematically illustrating a third deposition chamber in a deposition apparatus according to another embodiment of the present invention, and FIG. 19 is a plan view showing a substrate in a first chamber of the third deposition chamber of FIG. 18 A plan view of a process of forming a pattern layer on a portion corresponding to the first region of the first chamber, and FIG. A plan view of a process of forming a pattern layer on a portion of the chamber corresponding to the second region.

Compared with the deposition apparatus 500 in FIG. 1 , the deposition apparatus according to another embodiment of the present invention is different only in the third deposition chamber 330a, and the rest are the same. Thus, in the deposition apparatus according to another embodiment of the present invention, only the third deposition chamber 330a is described in detail.

Referring to FIGS. 18 to 20 , the third deposition chamber 330a includes a first chamber 331a, a second chamber 332a, and a third chamber 333a, and is similar to the third deposition chamber 330 of FIG. 6 . However, the arrangement of the first area DA11 and the second area DA12 of the first chamber 331a and the second chamber 332a respectively is the same as that of the first area DA1 and the second area DA1 of the first chamber 331 and the second chamber 332 of FIG. 6 . The arrangement of the area DA2 is different.

Specifically, the first area DA11 and the second area DA12 of the first chamber 331a are arranged in a matrix form along the first direction X and the second direction Y, and are alternately arranged in the first direction X and the second direction Y. arrangement.

The first area DA11 of the first chamber 331a may be an area overlapping with the substrate areas S2, S3, S6, S7 of the substrate S introduced into the first chamber 331a to deposit the deposition substance, while the second area The DA12 may be an area overlapping with the substrate areas S1 , S4 , S5 , S8 where the deposition substance is not deposited in the substrate S introduced into the first chamber 331 a.

The first area DA11 and the second area DA12 of the second chamber 332a may be distinguished in the same manner as the first area DA11 and the second area DA12 of the first chamber 331a.

However, the first area DA11 of the second chamber 332a may be an area overlapping with the substrate areas S2, S3, S6, S7 where the deposition substance is not deposited in the substrate S introduced into the second chamber 332a, while the second The second area DA12 may be an area overlapping with the substrate areas S1 , S4 , S5 , S8 on which the deposition substance is to be deposited in the substrate S introduced into the second chamber 332 a.

According to the constitution of the first chamber 331a and the second chamber 332b, the arrangement of the first pattern mask assembly PMA11 arranged inside the first chamber 331a and the arrangement of the second pattern mask assembly PMA11 arranged inside the second chamber 332a The arrangement of the module PMA12 may vary.

The first pattern mask assembly PMA11 is arranged in the first area DA11 of the first chamber 331a, and is connected with the substrate S introduced into the inside of the first chamber 331a using a carrier (C of FIG. 10 ). The overlapping substrate regions S2 , S3 , S6 , and S7 of the first region DA11 of the chamber 331 a are in close contact with each other. The first pattern mask assembly PMA11 is similar to the first pattern mask assembly PMA1 of FIG. 7 . However, the first pattern mask assembly PMA11 is in close contact with one substrate region, and thus may be smaller in size than the first pattern mask assembly PMA1 of FIG. 7 . At this time, the frame of the first pattern mask assembly PMA11 is different from the frame of the first pattern mask assembly PMA1 of FIG. 7 , and does not include a division part.

Such a first pattern mask assembly PMA11 can make the pattern layer formed in the substrate S overlap with the first area DA11 of the first chamber 331a when the deposition material is discharged to the substrate S side through the first deposition source 335 For example, in a light-emitting display device, a red light-emitting layer is formed at a red pixel.

The second pattern mask unit PMA12 is configured in the same manner as the first pattern mask unit PMA11. However, the second mask assembly PMA12 is arranged in the second area DA12 of the second chamber 332a, and is related to the substrate S introduced into the inside of the second chamber 332a using a carrier (C of FIG. 10 ). The overlapping substrate regions S1 , S4 , S5 , S8 of the second region DA12 of the chamber 332 a are in close contact with each other.

When the deposition material is discharged to the substrate S side through the second deposition source 336, the second pattern mask assembly PMA12 can make the pattern layer formed in the substrate S overlap with the second region DA12 of the second chamber 332a. At certain parts of the substrate regions S1 , S4 , S5 , S8 , for example, in a light-emitting display device, a red light-emitting layer is formed at a red pixel.

The third chamber 333a is similar to the third chamber 333 of FIG. 6 . However, the third chamber 333a is internally provided with an exchange mask assembly SPMA1 having the same size and pattern as the first pattern mask assembly PMA11 or the second pattern mask assembly PMA12. .

As described above, without affecting the arrangement of the first pattern mask member PMA11 and the second pattern mask member PMA12 having a size smaller than the substrate S, and in the first pattern mask member PMA11 and the substrate In the state where the bottom S is in close contact and the second pattern mask assembly PMA12 and the substrate S are in close contact, through the first chamber 331a and the second chamber 332a, the deposition of the deposition substance is used to form a pattern defined in the substrate S. Therefore, it is possible to reduce the distortion of the pattern layer formed on the substrate S due to the bending phenomenon caused by the self-weight of the mask in the FMM method , and can reduce the distortion of the pattern layer formed on the substrate S due to the uneven separation distance between the mask and the substrate S in the SMS method.

Next, a deposition apparatus 700 according to yet another embodiment of the present invention will be described.

FIG. 21 is a system configuration diagram schematically illustrating a deposition apparatus according to still another embodiment of the present invention.

A deposition apparatus 700 according to still another embodiment of the present invention has the same structure as that of the deposition apparatus 500 of FIG. 1 except that it further includes a second deposition unit 600 as another deposition unit. Therefore, in the deposition apparatus 700 according to yet another embodiment of the present invention, only the second deposition part 600 is described in detail.

Referring to FIG. 21 , a deposition apparatus 700 according to another embodiment of the present invention includes a loading part 100 , a first deposition part 300 , an unloading part 400 and a second deposition part 600 .

Since the loading unit 100 and the unloading unit 400 have been described above, repeated descriptions are omitted. The first deposition part 300 is different from the deposition part 300 of FIG. 1 only in terminology, and thus repeated descriptions are omitted.

The second deposition part 600 is configured correspondingly to the first deposition part 300 to enable a process of depositing a deposition substance onto another substrate other than the substrate S. Referring to FIG. That is, the deposition unit 600 includes at least one deposition chamber, for example, may include a first deposition chamber 610, a second deposition chamber 620, a third deposition chamber 630, and a fourth deposition chamber arranged along the first direction X. 640 , fifth deposition chamber 650 , sixth deposition chamber 660 and seventh deposition chamber 670 .

The first deposition chamber 610, the second deposition chamber 620, the third deposition chamber 630, the fourth deposition chamber 640, the fifth deposition chamber 650, the sixth deposition chamber 660 and the seventh deposition chamber of the second deposition part 600 The deposition chamber 670 may communicate with the first deposition chamber 310, the second deposition chamber 320, the third deposition chamber 330, the fourth deposition chamber 340, and the fifth deposition chamber of the first deposition part 300 via the moving space MS. 350 , the sixth deposition chamber 360 is opposite to the seventh deposition chamber 370 .

The deposition apparatus 700 as described above includes two deposition parts 300, 600, and can perform deposition processes on a plurality of substrates at the same time. Thus, the yield of display devices manufactured using the deposition apparatus 700 can be improved.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can understand that without changing the technical idea or essential features of the present invention, other specific methods can also be used. implement. Therefore, it should be understood that the embodiments described above are illustrative and not restrictive in all respects.

Explanation of reference signs

100: loading section 300, 600: deposition section

310: first deposition chamber 330, 330a: third deposition chamber

331: first chamber 332: second chamber

400: unloading section 500, 700: depositing device

Claims (10)

1. A deposition device comprising: a first chamber, the inside of which is defined with a first region and a second region arranged along a first direction; a first pattern mask assembly disposed inside the first chamber to overlap the first region; a first deposition source disposed inside the first chamber, and discharges a deposition substance toward the first pattern mask assembly side while moving in a second direction intersecting the first direction; The second chamber is arranged to be spaced apart from the first chamber along the first direction, and is defined inside the second chamber in the same manner as the first chamber along the the first area and the second area aligned in the first direction; a second pattern mask assembly disposed inside the second chamber to overlap the second region; a second deposition source disposed inside the second chamber, and discharges a deposition substance toward the second pattern mask assembly side while moving in the second direction; and a baffle disposed between the first pattern mask assembly and the first deposition source inside the first chamber corresponding to the second region, and in the second chamber An inner portion of is disposed between the second pattern mask assembly and the second deposition source corresponding to the first region. 2. The deposition apparatus according to claim 1, wherein, the deposition substance of the first deposition source is the same as the deposition substance of the second deposition source, The second deposition source is configured to discharge the deposition material after the deposition material is discharged using the first deposition source. 3. The deposition apparatus according to claim 1, wherein, In the first direction, the length of the first pattern mask assembly is smaller than the length of the first deposition source. 4. The deposition apparatus according to claim 1, wherein, The first pattern mask assembly is configured to be in close contact with a substrate region overlapping with the first region introduced into the substrate inside the first chamber, The second pattern mask assembly is configured to be in close contact with a substrate region overlapping the second region of the substrate introduced into the second chamber. 5. The deposition apparatus according to claim 1, wherein, When there are multiple first areas and multiple second areas inside the first chamber, the second areas are arranged between adjacent first areas. 6. The deposition apparatus according to claim 1, wherein, When there are multiple first regions and multiple second regions inside the first chamber, the first regions and the second regions are arranged in a matrix and in the first direction and the second direction are arranged alternately. 7. The deposition apparatus of claim 1, further comprising: with the first chamber, the first pattern mask assembly, the first deposition source, the second chamber, the second pattern mask assembly and the second deposition source Another deposition part corresponding to the deposition part. 8. A method of manufacturing a display device, comprising the following steps: inside the first chamber defining first and second regions aligned along the first direction, a first pattern mask assembly is arranged overlapping the first region; introducing a substrate defining a first substrate region and a second substrate region into the interior of the first chamber, and bringing the first substrate region into close contact with the first pattern mask assembly; While moving the first deposition source arranged inside the first chamber along the second direction intersecting with the first direction, the deposition substance is discharged toward the substrate side, so as to deposit on the first substrate. the bottom region forms a patterned layer; A first region and a second region arranged along the first direction are defined inside in the same manner as the first chamber, which are arranged to be spaced apart from the first chamber along the first direction. Inside the second chamber of the second region, a second pattern mask assembly is arranged overlapping the second region; introducing the substrate into the interior of the second chamber, and bringing the second substrate region into close contact with the second pattern mask assembly; and While moving the second deposition source arranged inside the second chamber along the second direction, the deposition substance is discharged toward the substrate side to form a pattern layer on the second substrate region. 9. The method of manufacturing a display device according to claim 8, wherein, The pattern layer includes at least one of a hole transport layer and a light emitting layer of a light emitting display device. 10. The method of manufacturing a display device according to claim 8, wherein, the deposition substance of the first deposition source is the same as the deposition substance of the second deposition source, The step of discharging the deposition substance using the second deposition source is performed after the step of discharging the deposition substance using the first deposition source.