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CN106329301A - Preparing method of solar-pumped laser-operating crystal with nanoscale-step doped structure - Google Patents

Preparing method of solar-pumped laser-operating crystal with nanoscale-step doped structure Download PDF

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Publication number
CN106329301A
CN106329301A CN201610985982.3A CN201610985982A CN106329301A CN 106329301 A CN106329301 A CN 106329301A CN 201610985982 A CN201610985982 A CN 201610985982A CN 106329301 A CN106329301 A CN 106329301A
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Prior art keywords
crystal
doping
laser work
laser
solar
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Chinese (zh)
Inventor
张伟
周必磊
邓小飞
刘阳
刘利军
裘俊
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Shanghai Institute of Satellite Engineering
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Shanghai Institute of Satellite Engineering
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Priority to CN201610985982.3A priority Critical patent/CN106329301A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

The invention is to solve a technical problem through providing a solar-pumped laser-operating crystal structure which can avoid producing temperature step and heating effect. The crystal structure differentiate from the current design of uniformly doped crystal structure and subsection-limited step doped crystal structure, applying nanotechnology to realize nanoscale-step doped laser-operating crystal structures, thus to avoid temperature step effect or piecewise temperature step effect brought by uniform doping and little step doping and to make incident light energy be uniformly absorbed along the radial direction of incident light inside the laser-operating crystal; since nanoscale-step doping of the laser-operating crystal reduces the thermal lens effect and thermal step effect produced in the system, not only making energy inside the crystal uniformly absorbed, but also improving crystal's ability to absorb incident light and depressing the incident light energy dissipating as heat, which is an effective mean to improve the overall energy efficiency of solar-pumped laser, available to various ground or space laser applications.

Description

The preparation method of the solar-pumped laser work crystal of nanometer Doping structure
Technical field
The present invention relates to a kind of solar-pumped laser work crystalline nanometric doped structure design, this design utilizes laser work The nanoscale Doping structure design of crystals metal ion improves " light-light " conversion ratio of solar-pumped work crystal, Reduce incident power loss, and then optimize the design of solar-pumped laser instrument.The laser work of this nanometer Doping structure is brilliant Body may apply in ground or space solar-pumped laser instrument, has " light-light " conversion efficiency high, the advantage such as dispel the heat little, can It is widely used in the multiple laser application of ground or space.
Background technology
In solar-pumped Optical Maser System, the absorption efficiency of incident illumination energy is directly determined and is by laser work crystal The total energy effect of system and laser output power.In current optical pumping laser crystal, such as neodymium-doped yttrium-aluminum garnet (Nd:YAG) crystal Deng, metal ion many employings Uniform Doped of its crystals or the less Doping of segments, this doped structure meeting Cause crystals pump light incident direction energy absorption uneven, form temperature gradient effect, end-face deformation at crystals Thermal lensing effect, birefringence effect etc., these heat effects limit the raising to absorbing incident light efficiency of the laser work crystal, with The limit lifting of laser output power.
Summary of the invention
The present invention absorbs the uneven various thermal effects caused for overcoming existing " light-light " pump laser pump energy Should, propose one and be applied to the high energy efficiency solar-pumped laser work crystal of sunlight directly " light-light " pump laser, this crystalline substance Body is without changing existing crystal volume and form, and the doping of its internal metal ion uses mixed nanometer structure, in can making crystal Portion's energy absorption is uniform.
The present invention is achieved by the following technical solutions:
The invention provides the preparation method of the solar-pumped laser work crystal of a kind of nanometer Doping structure, its bag Include following steps:
S1: utilize the principle of absorption of laser work crystal medium, calculates the absorption energy of segmentation crystal in Doping crystal Amount PiWith section length LiBetween corresponding relation, and calculate the correspondence between the length of every section of crystal and doping content further Relation；
S2: laser work crystal medium is formed by its content doping laser work metal ion of laser work crystal, In Nd:YAG medium, substrate is YAG crystal, and metal ion is trivalent neodymium ion, uses fusion method directly brilliant at laser work The substrate of body produces scattered laser work metal ion, according to the length of every section of crystal that the Theoretical Calculation in step S1 obtains Corresponding relation between degree and doping content, controls the condition of preparation, makes the laser work metal ion profile of generation meet and receives Rice ladder distribution occasion, the solar-pumped laser work that produced laser work crystal becomes nanometer Doping structure is brilliant Body.
Preferably, the absorption energy P of segmentation crystal in described Doping crystaliWith section length LiBetween The computing formula of corresponding relation is shown in formula I:
P i = P 0 [ 1 - exp ( - α 1 L 1 ) ] i = 1 P 0 exp ( - Σ j = 1 i - 1 α j L j ) · [ 1 - exp ( - α i L i ) ] i ≥ 2 - - - I ,
Wherein, P0 is incident illumination general power, i=1,2,3 ... N, N are laser crystal segments, N in nanometer Doping Value is the most infinite, and has P1=P2=...=PN；α j is the absorptance of work crystal, absorptance and doping content it Between have the linear relationship of approximation, as there being α (n)=736n+6 in Nd:YAG crystal, wherein α represents absorptance, and unit is m-1； N represents doping content, and unit is at%.
Preferably, the computing formula such as formula of the corresponding relation between length and the doping content of described every section of crystal Shown in II:
L i = - 1 a i l n [ N - iη 0 N - ( i - 1 ) η 0 ] - - - I I ,
Wherein, η0For the total absorption efficiency of incident illumination.
Preferably, described η0Computing formula as shown in formula III:
P 1 = P 2 = P 3 = ... = P N = P 0 η 0 N - - - I I I .
Preferably, the composition of described laser work crystal is Nd:YAG.
Preferably, a diameter of the 5～6mm of described laser work crystal, a length of 8mm.
Preferably, during the end pumping of described laser work crystal, the concentration of incidence end doping trivalent neodymium ion For 0.1at%, the concentration of exit end doping trivalent neodymium ion is 1at% or 2at%, the length of mid portion doping trivalent neodymium ion Degree and concentration respectively according to
WithCalculate,
Wherein length should be according to 10-7～10-9Magnitude and actual difficulty of processing are evenly dividing.
Preferably, when the intensity of incident illumination is less than 4000W/m2Time, the overall absorption effect of laser work crystal It is 80～85% that rate controls.
In other words: the preparation method of the solar-pumped laser work crystal of the nanometer Doping structure of the present invention, such as Fig. 1 Shown in, comprise the steps:
Step 1, " light-light " pumping laser work crystal of preparation nanometer Doping, utilize laser work crystal medium Principle of absorption, calculate the absorption energy P of segmentation crystal in Doping crystali(i=1,2,3 ... N) and section length LiIt Between corresponding relation, make P1=P2=...=Pi, and segments N is taken the limit, the length and the doping that calculate every section of crystal are dense The corresponding relation of degree.
Step 2, when the numerical value of N takes the limit, alias gradually demonstrates seriality, the temperature in short distance and energy The most uniform, when the stepped change of doping content reaches nanometer scale, work crystals is along pump light incident direction The absorption energy of each position is the most identical with temperature, thus solves the heat effect problem of work crystals, reduces thermal control System pressure.
Described step 1 includes:
(1) in " light-light " pumping laser work crystal of piece-wise step doping, the expression formula of each section of Absorption of Medium power For
P i = P 0 [ 1 - exp ( - α 1 L 1 ) ] i = 1 P 0 exp ( - Σ j = 1 i - 1 α j L j ) · [ 1 - exp ( - α i L i ) ] i ≥ 2
Wherein P0For incident illumination general power, α1For doping coefficient.I=1,2,3 ... N, N are laser crystal segments.Nanometer In Doping, N value is the most infinite, and has P1=P2=...=PN.
(2) identical for each stage Absorption of Medium power in making " light-light " pumping laser work crystal, it is ensured that absorption efficiency Constant need meet
P 1 = P 2 = P 3 = ... = P N = P 0 η 0 N
Wherein η0For the total absorption efficiency of incident illumination, the length of every section of medium can be calculated accordingly
L i = - 1 a i l n [ N - iη 0 N - ( i - 1 ) η 0 ]
N is made to tend to infinitely great, then LiTending to 0, i.e. reach nanometer ladder, now crystals step number is infinitely great, is entering Penetrate light radial energy to be uniformly distributed.
(3) fusion method is used directly to produce scattered laser work metal ion in laser work crystal substrate (YAG), By the calculated results in step 1, through condition prepared by conservative control, the laser work metal ion profile making generation is full Foot nanometer ladder distribution occasion, produced laser work crystal becomes nanometer Doping structure " light-light " pumping laser Work crystal.
In actual applications, the overall dimensions of Nd:YAG laser work crystal needs according to output and incident intensity Consider design.Described nanometer Doping laser work crystal design swashs for diameter 5～6mm, the Nd:YAG of length 8mm Light work crystal.When end pumping, adulterate trivalent neodymium ion (Nd3+) concentration is incidence end (at 0mm) 0.1at%, exit end (at 8mm) 1at% or 2at%, mid portion doping content calculates according to described formula, when incident intensity is less than 4000W/ m2Time, overall absorption control from view of profit is 80～85%.
The present invention is made up of above step and principle, be developed into a kind of to incident solar energy uniform pickup " light- Light " pumping laser work crystal.
Compared with prior art, the present invention has a following beneficial effect:
The present invention passes through non-uniform doping, makes pump energy each several part uniform pickup in working media, and then reduces It is unbalanced that heat is distributed.In the case of not reducing total absorption efficiency, both it was avoided that local temperature was too high, can avoid again The generation of temperature step.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the further feature of the present invention, Purpose and advantage will become more apparent upon:
Fig. 1 is the work flow schematic diagram of laser crystal Uniform Doped and Doping；
Fig. 2 is the fundamental diagram of laser crystal end pumping nanometer Doping；
Fig. 3 is the process chart that nanometer Doping structural energy absorbs；
Fig. 4 is laser work crystals metal ion mixing scattergram under profile pump working method；
Fig. 5 is laser work crystals metal ion mixing scattergram under " end, side " mixing pumping working method.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in the technology of this area Personnel are further appreciated by the present invention, but limit the present invention the most in any form.It should be pointed out that, the ordinary skill to this area For personnel, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement.These broadly fall into the present invention Protection domain.
The invention provides the preparation method of the solar-pumped laser work crystal of a kind of nanometer Doping structure, its bag Include following steps:
S1: utilize the principle of absorption of laser work crystal medium, calculates the absorption energy of segmentation crystal in Doping crystal Amount PiWith section length LiBetween corresponding relation, and calculate the correspondence between the length of every section of crystal and doping content further Relation；
S2: laser work crystal medium is formed by its content doping laser work metal ion of laser work crystal, In Nd:YAG medium, substrate is YAG crystal, and metal ion is trivalent neodymium ion, uses fusion method directly brilliant at laser work The substrate of body produces scattered laser work metal ion, according to the length of every section of crystal that the Theoretical Calculation in step S1 obtains Corresponding relation between degree and doping content, controls the condition of preparation, makes the laser work metal ion profile of generation meet and receives Rice ladder distribution occasion, the solar-pumped laser work that produced laser work crystal becomes nanometer Doping structure is brilliant Body.
Preferably, the absorption energy P of segmentation crystal in described Doping crystaliWith section length LiBetween The computing formula of corresponding relation is shown in formula I:
P i = P 0 [ 1 - exp ( - α 1 L 1 ) ] i = 1 P 0 exp ( - Σ j = 1 i - 1 α j L j ) · [ 1 - exp ( - α i L i ) ] i ≥ 2 - - - I ,
Wherein, P0 is incident illumination general power, i=1,2,3 ... N, N are laser crystal segments, N in nanometer Doping Value is the most infinite, and has P1=P2=...=PN；α j is the absorptance of work crystal, absorptance and doping content it Between have the linear relationship of approximation, as there being α (n)=736n+6 in Nd:YAG crystal, wherein α represents absorptance, and unit is m-1； N represents doping content, and unit is at%.
Preferably, the computing formula such as formula of the corresponding relation between length and the doping content of described every section of crystal Shown in II:
L i = - 1 a i l n [ N - iη 0 N - ( i - 1 ) η 0 ] - - - I I ,
Wherein, η0For the total absorption efficiency of incident illumination.
Preferably, described η0Computing formula as shown in formula III:
P 1 = P 2 = P 3 = ... = P N = P 0 η 0 N - - - I I I .
Preferably, the composition of described laser work crystal is Nd:YAG.
Preferably, a diameter of the 5～6mm of described laser work crystal, a length of 8mm.
Preferably, during the end pumping of described laser work crystal, the concentration of incidence end doping trivalent neodymium ion For 0.1at%, the concentration of exit end doping trivalent neodymium ion is 1at% or 2at%, the length of mid portion doping trivalent neodymium ion Degree and concentration respectively according to
WithCalculate,
Wherein length should be according to 10-7～10-9Magnitude and actual difficulty of processing are evenly dividing.
Preferably, when the intensity of incident illumination is less than 4000W/m2Time, the overall absorption effect of laser work crystal It is 80～85% that rate controls.
As in figure 2 it is shown, utilize the nanometer Doping structure of " light-light " pumping laser work crystals, at incident illumination End face starts to gradually step up the doping content of laser crystal internal metal ion, and then the incident illumination gradually stepping up crystals is inhaled Receipts ability, along with incident optical power being gradually lowered in radial direction, makes crystals power absorption equalize, reaches crystal heating uniform Purpose.
As it is shown on figure 3, the work process of this system is as follows:
Step one, when incident illumination (sunlight) arrives laser work crystal end-face, due to now incident illumination front-end power relatively Height, if laser crystal uses Uniform Doped structure, then can assemble relatively high power at the incident end face of laser crystal；Use nanometer Doping, owing to end absorptance is relatively low, then end absorbed power does not assemble relatively high power.
Step 2, at crystals, owing to incident illumination front-end power is constantly absorbed, causes front-end power to decline, therefore Being formed radially energy attenuation at crystals incident illumination, now homogeneous texture can cause crystals energy absorption to decay, and receives Rice Doping structure then makes each several part crystal energy absorb equilibrium by the way of improving absorptance.
Described nanometer Doping laser work crystal design is for diameter 5mm-6mm, the cylindrical Nd:YAG of length 8mm Laser work crystal.Doping trivalent neodymium ion (Nd3+) concentration is incidence end (at 0mm) 0.1at%, exit end (at 8mm) 1at% Or 2at%, mid portion doping content calculates according to described formula, when incident intensity is less than 4000W/m2Time, overall suction Receive control from view of profit at 70%-80%.
Step 3, in the case of Uniform Doped, owing in crystal, the energy of local absorption is directly proportional to the heat distributed, because of This brings crystals heat skewness, forms thermal lens and thermal gradients in certain time.And use nanometer ladder to mix Miscellaneous, work crystals each several part Energy distribution is uniform, and heat consumption equalizes, amount of suppression thermal lens or the generation of thermal gradients.
As shown in Figure 4, for laser work crystals metal ion mixing scattergram under profile pump working method.It is former Reason is the metal ion of low concentration of adulterating outside cylinder laser crystal, under nanoscale, mixes the closer to its center Miscellaneous concentration is the highest, then can realize the incident illumination uniform pickup from outside to axle center at crystals.
Described nanometer Doping laser work crystal design is for diameter 5mm～6mm, the cylindrical Nd of length 8mm: YAG laser work crystal.Doping trivalent neodymium ion (Nd3+) concentration is lateral surface (at 0mm) 0.3at%, at crystal axle center (at 2.5mm or 3mm) 2at%, mid portion doping content calculates according to described formula, when incident intensity is less than 4000W/m2Time, overall absorption control from view of profit is 80～85%.
As it is shown in figure 5, divide for laser work crystals metal ion mixing under " end, side " mixing pumping working method Butut.Owing to end face and side have pump light to input simultaneously, it is therefore desirable to reduce metal ion mixing concentration in two end faces.
" light-light " pumping system mainly has several work sides such as end pumping, profile pump, " end, side " mixing pumping Formula, the nanometer Doping structure of the different crystal that then works of pump light input mode is the most different.No matter use which kind of working method, The principle of nanometer Doping is all to reduce doping content in incident illumination end, is radially gradually increased doping at incident illumination dense Degree, maintains the balancing energy of crystals to absorb.
Described nanometer Doping laser work crystal design is for diameter 5～6mm, the cylindrical Nd:YAG of length 8mm Laser work crystal.Doping trivalent neodymium ion (Nd3+) concentration is lateral surface (distance axle center 0mm at) 0.2at%, at crystal axle center (at axle center) 2at%；Two end faces doping content is 0.2at%, and mid portion doping content calculates according to described formula, when entering Penetrate light intensity less than 4000W/m2Time, overall absorption control from view of profit is 85～90%.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned Particular implementation, those skilled in the art can make various deformation or amendment within the scope of the claims, this not shadow Ring the flesh and blood of the present invention.

Claims (8)

1. the preparation method of the solar-pumped laser work crystal of a nanometer Doping structure, it is characterised in that include as Lower step:
S1: utilize the principle of absorption of laser work crystal medium, calculates the absorption energy P of segmentation crystal in Doping crystaliWith Section length LiBetween corresponding relation, and calculate the corresponding relation between the length of every section of crystal and doping content further；
S2: laser work crystal medium is formed by its content doping laser work metal ion of laser work crystal, uses Fusion method directly produces scattered laser work metal ion in the substrate of laser work crystal, according to the theory in step S1 Corresponding relation between length and the doping content of calculated every section of crystal, controls the condition of preparation, makes the laser of generation Work metal ion profile meets nanometer ladder distribution occasion, and produced laser work crystal becomes nanometer Doping knot The solar-pumped laser work crystal of structure.
2. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 1, it is special Levy and be, the absorption energy P of segmentation crystal in described Doping crystaliWith section length LiBetween the calculating of corresponding relation Formula is shown in formula I:
P i = P 0 [ 1 - exp ( - α 1 L 1 ) ] i = 1 P 0 exp ( - Σ j = 1 i - 1 α j L j ) · [ 1 - exp ( - α i L i ) ] i ≥ 2 - - - I ,
Wherein, P0 is incident illumination general power, i=1,2,3 ... N, N are laser crystal segments, and N value in nanometer Doping For the most infinite, and there is P1=P2=...=PN；α j is the absorptance of work crystal, has between absorptance and doping content The linear relationship of approximation.
3. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 1 or 2, its Being characterised by, the computing formula of the corresponding relation between length and the doping content of described every section of crystal is as shown in Formula II:
L i = - 1 a i l n [ N - iη 0 N - ( i - 1 ) η 0 ] - - - I I ,
Wherein, η0For the total absorption efficiency of incident illumination.
4. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 3, it is special Levy and be, described η0Computing formula as shown in formula III:
P 1 = P 2 = P 3 = ... = P N = P 0 η 0 N - - - I I I .
5. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 1, it is special Levy and be, a diameter of the 5～6mm of described laser work crystal, a length of 8mm.
6. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 5, it is special Levying and be, the composition of described laser work crystal is Nd:YAG.
7. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 5, it is special Levying and be, during the end pumping of described laser work crystal, the concentration of incidence end doping trivalent neodymium ion is 0.1at%, outgoing The concentration of end doping trivalent neodymium ion is 1at% or 2at%, and length and the concentration of mid portion doping trivalent neodymium ion are pressed respectively According toWithCalculate.
8. the preparation method of the solar-pumped laser work crystal of nanometer Doping structure as claimed in claim 5, it is special Levy and be, when the intensity of incident illumination is less than 4000W/m2Time, the overall absorption control from view of profit of laser work crystal be 80～ 85%.
CN201610985982.3A 2016-11-09 2016-11-09 Preparing method of solar-pumped laser-operating crystal with nanoscale-step doped structure Pending CN106329301A (en)

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CN116646810A (en) * 2023-05-30 2023-08-25 河北工业大学 Concentration Gradient Design Method for Laser Amplifier Gain Medium and Laser Amplifier Gain Medium
CN117856018A (en) * 2024-01-12 2024-04-09 北京理工大学 A monolithic non-planar ring cavity laser based on gradient-doped laser ceramics

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN116646810A (en) * 2023-05-30 2023-08-25 河北工业大学 Concentration Gradient Design Method for Laser Amplifier Gain Medium and Laser Amplifier Gain Medium
CN116646810B (en) * 2023-05-30 2025-11-11 河北工业大学 Concentration gradient design method of laser amplifier gain medium and laser amplifier gain medium
CN117856018A (en) * 2024-01-12 2024-04-09 北京理工大学 A monolithic non-planar ring cavity laser based on gradient-doped laser ceramics

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Application publication date: 20170111