CN106328812B - active element and manufacturing method thereof - Google Patents

Abstract

The present invention provides an active element and a method for manufacturing the same, wherein the active element is disposed on a substrate and includes a gate, an organic active layer, a gate insulating layer, a plurality of crystallization inducing structures, a source electrode and a drain electrode. The gate insulating layer is disposed between the gate electrode and the organic active layer. The crystallization inducing structures are distributed in the organic active layer and directly contact the substrate or the gate insulating layer. The source electrode and the drain electrode are disposed on opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source electrode and the drain electrode. The active element of the present invention can have a film layer with better crystallization uniformity.

Description

Active component and its manufacturing method

technical field

The present invention relates to a semiconductor element and its manufacturing method, and in particular to an active element and its manufacturing method.

Background technique

At present, when organic semiconductor thin films are applied to organic transistor elements, the method of thin film crystallization is used to increase carrier mobility. However, if the crystallographic direction of the thin film crystal structure cannot be controlled, the formed film layer will have poor uniformity. Generally speaking, the thin film crystals formed by the solution process using an organic solution mostly have large-scale non-directional crystal growth, so an annealing process is required to improve the properties of the film. In other words, this method cannot effectively control the crystallographic direction of the thin film crystal structure.

Contents of the invention

The invention provides an active element and a manufacturing method thereof. The active element has a film layer with better crystal uniformity.

The present invention also provides a method for manufacturing the active element, which is used to manufacture the above-mentioned active element.

The active element of the present invention is configured on the substrate and includes a gate, an organic active layer, a gate insulating layer, a plurality of crystallization inducing structures, a source and a drain. The gate insulating layer is configured between the gate and the organic active layer. The crystallization-inducing structure is distributed in the organic active layer, wherein the crystallization-inducing structure directly contacts the substrate or the gate insulating layer. The source and the drain are arranged on opposite sides of the organic active layer, wherein a part of the organic active layer is exposed between the source and the drain.

In an embodiment of the present invention, the above-mentioned crystallization-inducing structures are separated from each other and include a plurality of dot-shaped protrusions or a plurality of strip-shaped protrusions.

In an embodiment of the present invention, the above-mentioned crystallization-inducing structures are arranged in an array or dispersed.

In an embodiment of the present invention, the shapes and sizes of the above-mentioned crystallization-inducing structures are the same or different.

In an embodiment of the present invention, the above-mentioned crystallization-inducing structure is a plurality of nano-metal structures separated from each other or a plurality of partially overlapping silver oxide nanowires.

In an embodiment of the present invention, any two adjacent crystallization-inducing structures mentioned above are separated by a distance between 100 nanometers and 10 micrometers.

In an embodiment of the present invention, the above-mentioned active element further includes: a plurality of self-assembled monomolecular thin films respectively located between the crystallization-inducing structure and the organic active layer.

In one embodiment of the present invention, the material of the above-mentioned self-assembled monomolecular film includes pentafluorobenzenethiol (pentafluorobenzene thiol), 2-mercaptoethanol (C ₂ H ₆ OS), octadecylphosphonic acid (OPA ) or molecules with thiol (SH) or phosphate groups.

In an embodiment of the present invention, the above-mentioned organic active layer is located between the gate and the substrate, and the source and drain are located between the gate insulating layer and the substrate.

In an embodiment of the present invention, the density distribution of the above-mentioned crystallization-inducing structures is smaller near the source and the drain than at the portion of the organic active layer exposed between the source and the drain.

The manufacturing method of the active device of the present invention includes the following process steps. A gate is formed on the substrate. A gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the gate. A plurality of crystallization-inducing structures are formed on the gate insulating layer, wherein the crystallization-inducing structures directly contact the gate insulating layer. The organic semiconductor material is coated on the gate insulating layer, wherein the crystallization inducing structure induces the organic semiconductor material to form crystals, thereby defining an organic active layer. A source electrode and a drain electrode are formed on the organic active layer, wherein the source electrode and the drain electrode expose a part of the organic active layer.

In an embodiment of the present invention, the above-mentioned method for forming a crystallization-inducing structure includes nanoimprinting, spin coating, doctor blade coating, contact coating, inkjet coating or screen printing coating. law etc.

In an embodiment of the present invention, the above-mentioned crystallization-inducing structure induces the organic semiconductor material, so that the organic semiconductor material crystallizes and grows from the crystallization-inducing structure to form an organic active layer having at least one grain boundary.

In an embodiment of the present invention, the method for manufacturing the above-mentioned active device further includes: before coating the organic semiconductor material on the gate insulating layer, performing acidification or plasma treatment to oxidize the crystallization-induced structure, wherein the crystallization-induced The structure is a plurality of partially overlapping silver nanowires.

In an embodiment of the present invention, the above-mentioned method for manufacturing the active device further includes: before coating the organic semiconductor material on the gate insulating layer, forming a plurality of self-assembled monomolecular film particles on the crystallization-inducing structure; and After coating the organic semiconductor material on the gate insulating layer, a plurality of self-assembled monomolecular films are formed between the crystallization-inducing structure and the organic active layer.

In one embodiment of the present invention, the material of the above-mentioned self-assembled monomolecular film includes pentafluorobenzenethiol (pentafluorobenzene thiol), 2-mercaptoethanol (C ₂ H ₆ OS), octadecylphosphonic acid (OPA ) or molecules with thiol (SH) or phosphate groups.

The manufacturing method of the active device of the present invention includes the following process steps. A source and a drain are formed on the substrate, wherein a part of the substrate is exposed by the source and the drain. A plurality of crystallization-inducing structures are formed on the source, the drain, and the portion of the substrate exposed by the source and the drain, wherein the crystallization-inducing structure directly contacts the portion of the substrate, the source, and the drain. Coating an organic semiconductor material on the source, the drain, and the portion of the substrate exposed by the source and the drain, wherein the crystallization-inducing structure induces the formation of crystallization of the organic semiconductor material to define an organic active layer, and the organic active layer covers the source The part of the substrate exposed by the electrode, the drain, and the source and the drain. A gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the organic active layer, the source and the drain. A gate is formed on the gate insulating layer.

In an embodiment of the present invention, the above-mentioned method for forming a crystallization-inducing structure includes nanoimprinting, spin coating, doctor blade coating, contact coating, inkjet coating or screen printing coating. law etc.

In an embodiment of the present invention, the above-mentioned crystallization-inducing structure induces the organic semiconductor material, so that the organic semiconductor material crystallizes and grows from the crystallization-inducing structure to form an organic active layer having at least one grain boundary.

In an embodiment of the present invention, the method for manufacturing the above-mentioned active element further includes: before coating the organic semiconductor material on the source electrode, the drain electrode, and the portion of the substrate exposed by the source electrode and the drain electrode, forming A plurality of self-assembled monomolecular film particles on the crystallization-inducing structure; and after coating the organic semiconductor material on the source, the drain, and the portion of the substrate exposed by the source and the drain, the crystallization-inducing structure and the organic active layer Multiple self-assembled monomolecular films are formed between them.

In one embodiment of the present invention, the material of the above-mentioned self-assembled monomolecular film includes pentafluorobenzenethiol (pentafluorobenzene thiol), 2-mercaptoethanol (C ₂ H ₆ OS), octadecylphosphonic acid (OPA ) or molecules with thiol (SH) or phosphate groups.

Based on the above, since the present invention induces crystallization of the organic semiconductor material through the crystallization-inducing structure, the organic semiconductor material will preferentially grow from the crystallization-inducing structure to form an organic active layer with better film uniformity and better crystallinity. Therefore, the active device of the present invention can have a film layer with better crystalline uniformity.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

Description of drawings

FIG. 1 shows a schematic perspective view of an active element according to an embodiment of the present invention;

2A(a) to FIG. 2D are perspective schematic diagrams showing a method for manufacturing an active element according to an embodiment of the present invention;

Fig. 3 shows a schematic cross-sectional view of an active element according to another embodiment of the present invention;

4A to 4E are three-dimensional schematic diagrams illustrating a method of manufacturing an active element according to another embodiment of the present invention.

Explanation of reference signs:

10: Substrate;

100a, 100a', 100g, 100h: active components;

110a, 110g, 110h: grid;

120a, 120g, 120h: gate insulating layer;

130: Organic semiconductor materials;

130a, 130g, 130h: organic active layer;

140a, 140b, 140c, 140d, 140e, 140f, 140g, 140h, 140h': crystallization induced structures;

150a, 150g, 150h: source;

160a, 160g, 160h: drains;

170: Self-assembled monomolecular film particles;

170a, 170g, 170h: self-assembled monomolecular films;

B: grain boundary;

D: Spacing.

Detailed ways

FIG. 1 shows a schematic perspective view of an active element according to an embodiment of the present invention. Please refer to FIG. 1. In this embodiment, the active device 100a is disposed on the substrate 10 and includes a gate 110a, a gate insulating layer 120a, an organic active layer 130a, a plurality of crystallization-inducing structures 140a, a source 150a and a drain 160a. . The gate insulating layer 120a is disposed between the gate 110a and the organic active layer 130a. The crystallization-inducing structures 140a are distributed in the organic active layer 130a, wherein the crystallization-inducing structures 140a directly contact the gate insulating layer 120a and are separated from each other. The source 150a and the drain 160a are disposed on opposite sides of the organic active layer 130a, wherein a part of the organic active layer 130a is exposed between the source 150a and the drain 160a.

In detail, the active device 100 a of this embodiment is disposed on the substrate 10 , wherein the gate 110 a is disposed on the substrate 10 and directly contacts the substrate 10 . The gate insulating layer 120a covers the gate 110a and part of the substrate 10, and the crystallization inducing structure 140a directly contacts the gate insulating layer 120a, wherein the crystallization inducing structure 140a is embodied in an array and arranged on the gate insulating layer 120a, but not limited thereto. As shown in FIG. 1 , the crystallization inducing structures 140 a of this embodiment are, for example, a plurality of dot-shaped protrusions (such as cylinders), wherein the shapes and sizes of the crystallization inducing structures 140 a are substantially the same. That is to say, the structural shapes and sizes of the structure-inducing structures 140a are completely the same, but not limited thereto. Preferably, these crystallization-inducing structures 140a are substantially a plurality of nano-metal structures, wherein the diameter of each nano-metal structure is, for example, 5 nm to 300 nm. In addition, any two adjacent crystallization inducing structures 140a are separated by a distance D, preferably, the distance D is between 100 nanometers and 10 micrometers. The organic active layer 130a covers the crystallization inducing structure 140a, so that the crystallization inducing structure 140a is distributed in the organic active layer 130a. The source electrode 150a and the drain electrode 160a directly contact the organic active layer 130a and expose part of the organic active layer 130a.

As shown in FIG. 1 , the active element 100a composed of the gate 110a, the gate insulating layer 120a, the organic active layer 130a, the crystallization inducing structure 140a, the source 150a and the drain 160a is essentially a bottom gate thin film transistor (Bottom Gate TFT). gateTFT). That is to say, the active element 100a of this embodiment is embodied as a transistor, but it is not limited thereto. In other unshown embodiments, the active element can also be a sensing element or a solar cell. also. It should be noted that since the crystallization-inducing structures 140a of this embodiment are separated from each other, it is impossible to conduct conduction between the source 150a and the drain 160a through the crystallization-inducing structures 140a. In other words, the arrangement of the crystallization inducing structure 140a does not interfere with the electrical layout of the active device 100a.

The manufacturing method of the active element 100a' of the present invention will be described in detail below with reference to FIG. 2A to FIG. 2D . It must be noted here that the following embodiments continue to use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to represent the same or similar components, and some descriptions that omit the same technical content can refer to the previous embodiments. The description will not be repeated in the following embodiments.

FIG. 2A(a) to FIG. 2D are three-dimensional schematic diagrams illustrating a method of manufacturing an active element according to an embodiment of the present invention. According to the manufacturing method of the thin film transistor structure of this embodiment, first, please refer to FIG. 2A(a), forming the gate 110a on the substrate 10, wherein the material of the substrate 10 is glass, plastic or other suitable materials.

Next, a gate insulating layer 120a is formed on the substrate 10, wherein the gate insulating layer 120a covers the gate 110a. Here, the material of the gate insulating layer 120 a is, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, or tin antimony oxide, which are used for the gate insulating layer.

Next, a plurality of crystallization-inducing structures 140a are formed on the gate insulating layer 120a, wherein the crystallization-inducing structures 140a directly contact the gate insulating layer 120a and are separated from each other. In this embodiment, the method for forming the crystallization-inducing structure 140 a is, for example, nanoimprinting, spin coating, doctor blade coating, contact coating, inkjet coating, or screen printing coating. As shown in FIG. 2A(a), the crystallization-inducing structures 140a are embodied in an array and arranged on the gate insulating layer 120a, wherein these crystallization-inducing structures 140a are, for example, a plurality of dot-shaped protrusions (such as columns), and these crystallization-inducing structures The shape and size of 140a are substantially the same. Preferably, these crystallization-inducing structures 140a are substantially a plurality of nano-metal structures, wherein the diameter of each nano-metal structure is, for example, 5 nm to 300 nm. In addition, any two adjacent crystallization inducing structures 140a are separated by a distance D, preferably, the distance D is between 100 nanometers and 10 micrometers.

It should be noted that the present invention is not limited to the above-mentioned structure and arrangement of the crystallization inducing structure 140a. As shown in FIG. 2A(b), the crystallization-inducing structures 140b can also be arranged in an array and scattered; or, as shown in FIG. 2A(c), the density of the crystallization-inducing structures 140c is distributed in the middle of the gate insulating layer 120a. low, while the two sides of the gate insulating layer 120a present a state of high density, that is, the density distribution of the crystallization-inducing structure 140c is greater than that at the place adjacent to the source 150a and the drain 160a than when the organic active layer 130a is exposed to the source 150a and the drain 160a The part between (please refer to FIG. 1 or FIG. 2D), its purpose is that the crystal grains formed near the electrode are smaller, which can suppress the high electric field effect; or, as shown in FIG. 2A(d), the crystallization-induced structure 140d The shapes are the same but the sizes are not exactly the same. For example, the size of the crystallization-inducing structure 140d located in the center of the gate insulating layer 120a may be larger than the size of the crystallization-inducing structure 140d on both sides of the gate insulating layer 120a, but the shapes of the crystallization-inducing structures 140d are the same, The purpose is to prevent the problem of electrical leakage between the source and the drain; of course, in other unshown embodiments, the shapes of the crystallization-inducing structures may be different but their sizes are the same; or, the shapes of the crystallization-inducing structures may be different and Its size is also different; or, as shown in FIG. 2A(e), the crystallization-inducing structure 140e is, for example, a plurality of strip-shaped protrusions, the purpose of which is to induce long strip-shaped crystal grains and increase carrier migration in the long-side direction rate, so as to increase the conduction current; or, as shown in FIG. 2A(f), the crystallization-inducing structure 140f is, for example, a plurality of strip-shaped protrusions at an inclination angle, such as an angle of 45 degrees, arranged at equal intervals on the gate On the insulating layer 120a, the purpose is to avoid leakage caused by grain boundaries. All of the above still belong to the technical solutions that can be adopted by the present invention, and do not depart from the intended protection scope of the present invention.

Next, please refer to FIG. 2B , in order to increase the surface energy of the crystallization-inducing structure 140a, a plurality of self-assembled monomolecular film particles 170 may be selectively formed on the crystallization-inducing structure 140a.

After that, referring to FIG. 2C , the organic semiconductor material 130 is coated on the gate insulating layer 120a, wherein the crystallization inducing structure 140a induces the organic semiconductor material 130 to form crystals, thereby defining the organic active layer 130a. In particular, the crystallization inducing structure 140a of this embodiment can induce the organic semiconductor material 130 to crystallize and grow the organic semiconductor material 130 from the crystallization inducing structure 140a to form the organic active layer 130a having at least one grain boundary B. If the self-assembled monomolecular film particles 170 are selectively formed on the crystallization-inducing structure 140a, a plurality of self-assembled monomolecular films 170a are formed between the crystallization-inducing structure 140a and the organic active layer 130a. Here, the self-assembled monomolecular film 170a has the characteristic of changing the surface energy of the crystallization-inducing structure 140a, so it can effectively improve the arrangement of molecules in the organic active layer 130a during crystallization, and then effectively control the organic active layer 130a. Crystalline structure to form a film layer with good film uniformity and good crystallinity. In addition, the organic semiconductor material 130 of this embodiment is, for example, 5,11-bis(triethylsilylethynyl)bisthienthienthracene (DiF-TESADT) or 6,13-bis(triisopropylsilylethynyl) ) Pentacycline (TIPS-pentacene) and other soluble organic semiconductor materials, and the material of the self-assembled monomolecular film 170a is, for example, pentafluorobenzenethiol (pentafluorobenzene thiol), 2-mercaptoethanol (C ₂ H ₆ OS) , Octadecylphosphonic acid (OPA) or molecules with thiol (SH) or phosphate groups.

Finally, referring to FIG. 2D , a source electrode 150a and a drain electrode 160a are formed on the organic active layer 130a, wherein the source electrode 150a and the drain electrode 160a expose a part of the organic active layer 130a. Here, the material of the source 150a and the drain 160a is, for example, metal, and the metal used for the source 150a and the drain 160a may be the same as or different from the metal used for the gate 110a , which is not limited here. So far, the fabrication of the active device 100a' has been completed.

FIG. 3 shows a schematic cross-sectional view of an active element according to another embodiment of the present invention. Please refer to FIG. 3, the active element 100g of this embodiment is similar to the active element 100a of FIG. gate TFT), wherein the organic active layer 130g is located between the gate insulating layer 120g and the substrate 10, and the source 150g and the drain 160g are located between the gate insulating layer 120g and the substrate 10.

In detail, in the manufacturing process, firstly, the source electrode 150g and the drain electrode 160g are formed on the substrate 10 , wherein the source electrode 150g and the drain electrode 160g expose a part of the substrate 10 . Next, a crystallization-inducing structure 140g is formed on the source 150g, the drain 160g, and the portion of the substrate 10 exposed by the source 150g and the drain 160g, wherein the crystallization-inducing structure 140g directly contacts the portion of the substrate 10, the source 150g, and the drain The poles are 160g and separated from each other. After that, the organic semiconductor material 130 is coated on the source electrode 150g, the drain electrode 160g, and the portion of the substrate 10 exposed by the source electrode 150g and the drain electrode 160g, wherein the crystallization inducing structure 140g induces the organic semiconductor material 130 to form a crystal, thereby defining The organic active layer 130g, and the organic active layer 130g covers the source electrode 150g, the drain electrode 160g and the parts of the substrate 10 exposed by the source electrode 150g and the drain electrode 160g. A gate insulating layer 120g is formed on the substrate 10, wherein the gate insulating layer 120g covers the organic active layer 130, the source 150g and the drain 160g. A gate 110g is formed on the gate insulating layer 120g. So far, the fabrication of the active element 100g has been completed.

It should be noted that, the active device 100g of this embodiment is illustrated without the self-assembled monomolecular film 170a as an example. Of course, the active element 100g of this embodiment can also be made in the same way as the above-mentioned active element 100a', and can be coated with the organic semiconductor material 130 on the source electrode 150g, the drain electrode 160g, and the exposed parts of the source electrode 150g and the drain electrode 160g. Selectively form a plurality of self-assembled monomolecular film particles 170 (please refer to FIG. 2B ) on the crystallization-inducing structure 140g before coating the substrate 10 of the substrate 10; After that, a plurality of self-assembled monomolecular thin films 170a are formed between the crystallization inducing structure 140g and the organic active layer 130g on the portion of the substrate 10 exposed by the source electrode 150g and the drain electrode 160g (please refer to FIG. 2C ). The above still belongs to the applicable technical solutions of the present invention, and does not depart from the intended protection scope of the present invention.

4A to 4E are three-dimensional schematic diagrams illustrating a method of manufacturing an active element according to another embodiment of the present invention. The fabrication method of the active element in this embodiment is similar to the fabrication method of the active element in FIG. 2A(a) to FIG. 2D above, but the main difference between the two is: Please refer to FIG. 4A, and form the gate 110h sequentially , a gate insulating layer 120h and a crystallization inducing structure 140h are on the substrate 10, wherein the gate insulating layer 120h covers the gate 110h, and the crystallization inducing structure 140h directly contacts the gate insulating layer 120h. Here, the material of the gate 110h is, for example, silicon, and the material of the gate insulating layer 120h is, for example, silicon nitride or silicon oxide, and the crystallization-inducing structure 140h is embodied as a plurality of partially overlapping silver nanowires.

Next, referring to FIG. 4B , an acidification process or a plasma treatment process is performed to oxidize the crystallization-inducing structure 140h to form the crystallization-inducing structure 140h'.

Next, please refer to FIG. 4C , in order to increase the surface energy of the crystallization-inducing structure 140h, a plurality of self-assembled monomolecular film particles 170 may be selectively formed on the crystallization-inducing structure 140h.

Afterwards, referring to FIG. 4D , an organic semiconductor material (not shown) is coated on the gate insulating layer 120h, wherein the crystallization inducing structure 140h induces crystallization of the organic semiconductor material to define an organic active layer 130h. If the self-assembled monomolecular film particles 170 have been selectively formed on the crystallization-inducing structure 140h, a plurality of self-assembled monomolecular films 170h are formed between the crystallization-inducing structure 140h and the organic active layer 130h. Here, the self-assembled monomolecular film 170h has the characteristic of changing the surface energy of the crystallization-inducing structure 140h, so it can effectively improve the arrangement of molecules in the organic active layer 130h during crystallization, and then effectively control the organic active layer 130h. Crystalline structure to form a film layer with good film uniformity and good crystallinity. In addition, the material of the self-assembled monomolecular film 170a of this embodiment is, for example, pentafluorobenzenethiol (pentafluorobenzene thiol), 2-mercaptoethanol (C ₂ H ₆ OS), octadecylphosphonic acid (OPA), or Molecules with thiol (SH) or phosphate groups.

Finally, referring to FIG. 4E , a source electrode 150h and a drain electrode 160h are formed on the organic active layer 130h , wherein the source electrode 150h and the drain electrode 160h expose a part of the organic active layer 130h . Here, the material of the source electrode 150h and the drain electrode 160h is, for example, metal. So far, the fabrication of the active element 100h has been completed.

To sum up, since the present invention induces crystallization of the organic semiconductor material through the crystallization-inducing structure, the organic semiconductor material will preferentially grow from the crystallization-inducing structure to form an organic active material with better film uniformity and better crystallinity. Floor. Therefore, the active device of the present invention can have a film layer with better crystalline uniformity.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (25)

1. An active element, characterized in that it is configured on a substrate, and the active element comprises: grid; organic active layer; a gate insulating layer configured between the gate and the organic active layer; A plurality of crystallization-inducing structures distributed in the organic active layer, wherein the crystallization-inducing structures directly contact the substrate or the gate insulating layer, and the crystallization-inducing structures are a plurality of nano-metal structures separated from each other; and The source and the drain are arranged on opposite sides of the organic active layer, and the density distribution of these crystallization-inducing structures is greater than that at the place adjacent to the source and the drain than when the organic active layer is exposed to the source pole and the part between the drain. 2 . The active device according to claim 1 , wherein the crystallization-inducing structures are separated from each other and comprise a plurality of dot-shaped protrusions or a plurality of strip-shaped protrusions. 3 . The active device according to claim 1 , wherein the crystallization-inducing structures are arranged in an array or dispersed. 4 . 4. The active device according to claim 1, wherein the shapes and sizes of the crystallization-inducing structures are the same or different. 5 . The active device according to claim 1 , wherein any two adjacent crystallization-inducing structures are separated by a distance, and the distance is between 100 nanometers and 10 micrometers. 6. The active element according to claim 1, further comprising: A plurality of self-assembled monomolecular thin films are respectively located between the crystallization inducing structures and the organic active layer. 7 . The active device according to claim 6 , wherein the material of the self-assembled monomolecular films includes molecules with thiol groups or phosphate groups. 8 . The active device according to claim 6 , wherein the materials of the self-assembled monomolecular films include pentafluorothiophenol, 2-mercaptoethanol or n-octadecyl phosphate. 9. The active device according to claim 1, wherein the organic active layer is located between the gate and the substrate, and the source and the drain are located in the gate insulating layer and between the substrate. 10. The active device according to claim 1, wherein a part of the organic active layer is exposed between the source and the drain. 11. A method for manufacturing an active component, comprising: forming a gate on the substrate; forming a gate insulating layer on the substrate, wherein the gate insulating layer covers the gate; forming a plurality of crystallization-inducing structures on the gate insulating layer, wherein the crystallization-inducing structures directly contact the gate insulating layer; coating an organic semiconductor material on the gate insulating layer, wherein the crystallization-inducing structures induce crystallization of the organic semiconductor material to define an organic active layer; and Forming a source electrode and a drain electrode on the organic active layer, wherein the source electrode and the drain electrode expose a part of the organic active layer, and the density distribution of these crystallization-induced structures is adjacent to the source electrode and the organic active layer. The drain is larger than the portion of the organic active layer exposed between the source and the drain. 12 . The method for manufacturing an active device according to claim 11 , wherein the method for forming the crystallization-inducing structures comprises a contact coating method. 13 . 13. The manufacturing method of the active element according to claim 11, wherein the method for forming the crystallization-inducing structures comprises nanoimprinting, spin coating, doctor blade coating, and inkjet coating Or screen printing coating method. 14. The manufacturing method of the active element according to claim 11, wherein the crystallization-inducing structures induce the organic semiconductor material, so that the organic semiconductor material grows crystallized from the crystallization-inducing structures, and The organic active layer is formed having at least one grain boundary. 15. The manufacturing method of the active element according to claim 11, further comprising: Before coating the organic semiconductor material on the gate insulating layer, an acidification process or a plasma treatment process is performed to oxidize the crystallization-inducing structures, wherein the crystallization-inducing structures are a plurality of partially overlapping silver nanowires. 16. The manufacturing method of the active element according to claim 11, further comprising: Before coating the organic semiconductor material on the gate insulating layer, forming a plurality of self-assembled monomolecular film particles on the crystallization-inducing structures; and After coating the organic semiconductor material on the gate insulating layer, a plurality of self-assembled monomolecular films are formed between the crystallization-inducing structures and the organic active layer. 17 . The method for manufacturing an active device according to claim 16 , wherein the material of the self-assembled monomolecular films includes molecules with thiol groups or phosphate groups. 18 . 18. The manufacturing method of the active element according to claim 16, wherein the material of the self-assembled monomolecular films comprises pentafluorothiophenol, 2-mercaptoethanol or n-octadecyl phosphate. 19. A method for manufacturing an active component, comprising: forming a source and a drain on the substrate, wherein the source and the drain expose a portion of the substrate; forming a plurality of crystallization-inducing structures on the source, the drain, and the portion of the substrate exposed by the source and the drain, wherein the crystallization-inducing structures directly contact the substrate the portion, the source, and the drain; coating an organic semiconductor material on the source, the drain, and the portion of the substrate exposed by the source and the drain, wherein the crystallization-inducing structures induce the organic semiconductor material forming crystals to define an organic active layer, and the organic active layer covers the source, the drain, and the portion of the substrate exposed by the source and the drain, the crystals a density distribution of induced structures is greater adjacent to the source and the drain than at a portion of the organic active layer exposed between the source and the drain; forming a gate insulating layer on the substrate, wherein the gate insulating layer covers the organic active layer, the source and the drain; and A gate is formed on the gate insulating layer. 20. The manufacturing method of the active device according to claim 19, wherein the method for forming the crystallization-inducing structures comprises a contact coating method. 21. The manufacturing method of the active element according to claim 19, wherein the method for forming the crystallization-inducing structures comprises nanoimprinting, spin coating, doctor blade coating, and inkjet coating Or screen printing coating method. 22. The method of manufacturing an active element according to claim 19, wherein the crystallization-inducing structures induce the organic semiconductor material, so that the organic semiconductor material grows crystallized from the crystallization-inducing structures, and The organic active layer is formed having at least one grain boundary. 23. The manufacturing method of the active element according to claim 19, further comprising: forming a plurality of self-assembled monomolecular films before coating the organic semiconductor material on the source, the drain, and the portion of the substrate exposed by the source and the drain particles on the crystallization-inducing structures; and After coating the organic semiconductor material on the source, the drain, and the portion of the substrate exposed by the source and the drain, the crystallization inducing structures and Multiple self-assembled monomolecular films are formed between the organic active layers. 24. The manufacturing method of the active device according to claim 23, wherein the material of the self-assembled monomolecular films includes molecules having thiol groups or phosphate groups. 25. The manufacturing method of the active element according to claim 23, wherein the materials of the self-assembled monomolecular films include pentafluorothiophenol, 2-mercaptoethanol or n-octadecyl phosphate.