CN106292816B - 一种ldo电路及其供电方法,fpga芯片 - Google Patents
一种ldo电路及其供电方法,fpga芯片 Download PDFInfo
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- CN106292816B CN106292816B CN201510319613.6A CN201510319613A CN106292816B CN 106292816 B CN106292816 B CN 106292816B CN 201510319613 A CN201510319613 A CN 201510319613A CN 106292816 B CN106292816 B CN 106292816B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000006870 function Effects 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000000284 resting effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510319613.6A CN106292816B (zh) | 2015-06-11 | 2015-06-11 | 一种ldo电路及其供电方法,fpga芯片 |
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| CN201510319613.6A CN106292816B (zh) | 2015-06-11 | 2015-06-11 | 一种ldo电路及其供电方法,fpga芯片 |
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| CN106292816A CN106292816A (zh) | 2017-01-04 |
| CN106292816B true CN106292816B (zh) | 2018-01-09 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI626521B (zh) * | 2017-02-17 | 2018-06-11 | 旺宏電子股份有限公司 | 低壓差穩壓裝置及其操作方法 |
| CN106909194B (zh) * | 2017-03-17 | 2018-06-22 | 华南理工大学 | 一种具有高阶温度补偿的带隙基准电压源 |
| US9985521B1 (en) * | 2017-04-13 | 2018-05-29 | Nanya Technology Corporation | Voltage system |
| CN108255225A (zh) * | 2018-01-25 | 2018-07-06 | 中国科学院微电子研究所 | 一种基准电压源 |
| CN108446139B (zh) * | 2018-03-26 | 2021-11-16 | 京东方科技集团股份有限公司 | 一种fpga芯片的唤醒方法及装置 |
| CN109101067B (zh) * | 2018-08-10 | 2019-12-10 | 电子科技大学 | 一种双电源轨的低压差线性稳压器 |
| CN110221935B (zh) * | 2019-06-11 | 2021-04-02 | 中国科学院长春光学精密机械与物理研究所 | 基于ldo的fpga加载配置问题检查方法 |
| CN112286334B (zh) * | 2020-10-30 | 2021-07-23 | 广州鸿博微电子技术有限公司 | 用于mcu的低功耗电源切换电路及其实现方法 |
| CN112511144B (zh) * | 2020-12-15 | 2024-11-26 | 京微齐力(北京)科技股份有限公司 | 一种动态调节功耗的电路 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201118263Y (zh) * | 2007-11-05 | 2008-09-17 | 深圳艾科创新微电子有限公司 | 一种用于双电源系统的检测电路 |
| US7619402B1 (en) * | 2008-09-26 | 2009-11-17 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Low dropout voltage regulator with programmable on-chip output voltage for mixed signal embedded applications |
| CN102707756A (zh) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | 一种采用动态esr补偿电阻的宽负载线性调整器 |
| CN102931842A (zh) * | 2012-10-12 | 2013-02-13 | 华为技术有限公司 | 芯片动态调压电路和终端设备 |
| CN103178713A (zh) * | 2011-12-20 | 2013-06-26 | 深圳市汇春科技有限公司 | 显著降低待机功耗的低压降稳压器及方法 |
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2015
- 2015-06-11 CN CN201510319613.6A patent/CN106292816B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201118263Y (zh) * | 2007-11-05 | 2008-09-17 | 深圳艾科创新微电子有限公司 | 一种用于双电源系统的检测电路 |
| US7619402B1 (en) * | 2008-09-26 | 2009-11-17 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Low dropout voltage regulator with programmable on-chip output voltage for mixed signal embedded applications |
| CN103178713A (zh) * | 2011-12-20 | 2013-06-26 | 深圳市汇春科技有限公司 | 显著降低待机功耗的低压降稳压器及方法 |
| CN102707756A (zh) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | 一种采用动态esr补偿电阻的宽负载线性调整器 |
| CN102931842A (zh) * | 2012-10-12 | 2013-02-13 | 华为技术有限公司 | 芯片动态调压电路和终端设备 |
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| CN106292816A (zh) | 2017-01-04 |
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Effective date of registration: 20241209 Address after: 601, Floor 6, Building 5, Yard 8, Kegu 1st Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing, 100176 (Yizhuang Cluster, High-end Industrial Zone, Beijing Pilot Free Trade Zone) Patentee after: Jingwei Qili (Beijing) Technology Co.,Ltd. Country or region after: China Address before: 100083 20 / F, block B, Tiangong building, 30 Xueyuan Road, Haidian District, Beijing Patentee before: CAPITAL MICROELECTRONICS Co.,Ltd. Country or region before: China |