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CN106226965B - 一种基于igzo-tft的boa液晶面板的结构及制作方法 - Google Patents

一种基于igzo-tft的boa液晶面板的结构及制作方法 Download PDF

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CN106226965B
CN106226965B CN201610796745.2A CN201610796745A CN106226965B CN 106226965 B CN106226965 B CN 106226965B CN 201610796745 A CN201610796745 A CN 201610796745A CN 106226965 B CN106226965 B CN 106226965B
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CN106226965A (zh
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石龙强
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种基于IGZO‑TFT的BOA液晶面板的结构及制作方法，其中方法具有如下步骤：(1)制作黑色矩阵；(2)制作栅；(3)制作GI；(4)制作源漏极；(5)制作IGZO；(6)制作PV；(7)制作R/G/B；(8)制作ITO。本发明提出了用氧化铜做黑色矩阵的共平面结构的IGZO‑TFT的BOA器件，有效地避免IGZO被刻蚀的风险。

Description

一种基于IGZO-TFT的BOA液晶面板的结构及制作方法
技术领域
本发明涉及液晶领域，特别涉及一种基于IGZO-TFT的BOA液晶面板的结构及制作方法。
背景技术
首先，解释两个名词，IGZO(indium gallium zinc oxide，铟镓锌氧化物)为一种金属氧化物，而TFT(Thin Film Transistor)为薄膜晶体管。BOA(Black Martix On Array，黑色矩阵做在阵列基板上)是目前一种流行的LCD做法。该工艺省去了CF(color filter，彩色滤光片)基板，这样做不仅减去了CF工艺，降低成本，而且提高了制程的对位精度，有利于高开口率和高分辨率显示器的制作。
传统BOA的BM(Black Martix黑色矩阵)为有机光阻，是做完R、G、B后再做图案化处理。由于黑色矩阵对光学密度(OD)要求高，而现有的针对BOA结构的黑色矩阵(BM)的对光学密度值低，所以黑色矩阵(BM)涂布很厚，然而这样会导致遮挡阵列基板上的对位标记(mark)，不利于制程中的曝光对位，而且，过高的黑色矩阵的tapper角度难控制，比较陡，容易造成像素(pixel)ITO(ITO是一种N型氧化物半导体-氧化铟锡，ITO薄膜即铟锡氧化物半导体透明导电膜)搭接上去会断线的问题。
金属氧化物的绝缘性比较好，然而许多金属氧化物，特别是容易工业化应用的材料，大多数透光性能好，如三氧化二铝(Al2O3)，不适合做黑色矩阵(BM)材料，然而，本发明的发明人发现氧化铜(CuO)是一种黑色的氧化物，而且极易用于工业化生产，可以用来做BM材料。
IGZO由于高迁移率，成膜均匀性好，易于大尺寸化制作，并且和砷(As)有相同的制程，是很好的TFT有源层材料。近年来得到广泛发展。IGZO由于和ITO的性质相似，容易被铝(Al)酸刻蚀，所以一般而言，不适合做BCE(BackChannel Etched，背沟道刻蚀型)结构的器件。因为BCE结构在刻蚀源漏极的同时，会将IGZO层刻蚀掉，导致TFT器件制作失败。
鉴于此，本发明的发明人设计出一种基于IGZO-TFT的BOA液晶面板的结构和制作方法，以克服上述缺陷。
发明内容
本发明的目的是提供一种基于IGZO-TFT的BOA液晶面板的结构及制作方法，其提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效地避免IGZO被刻蚀的风险。
为达上述目的，本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧化处理得到氧化铜，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
(2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
(3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
(4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
(5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
(6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
(7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
(8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(1)中，是通过物理气相沉积进行铜成膜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(2)中，是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，其包括基板，所述基板上具有黑色矩阵图形，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的结构，其中，所述黑色矩阵图形由氧化铜形成。
本发明的有益效果是：本发明针对现有BOA结构黑色矩阵(BM)难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是制作BM图形的示意图；
图2是制作Gate图形的示意图；
图3是制作GI薄膜的示意图；
图4是制作源漏极的示意图；
图5是制作IGZO图形的示意图；
图6是制作PV薄膜的示意图；
图7是制作R/G/B的示意图；
图8是制作ITO图形的示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵(BM)：
如图1所示，首先，在基板1上通过物理气相沉积(Physical Vapor Deposition，PVD)进行铜(Cu)成膜，然后进行氧等离子体(O2plasma)处理，得到氧化铜(CuO)，即利用氧化铜(CuO)做BM的遮挡层，进行图案化处理，并且裸露出开口区域3。然后进行曝光，湿法刻蚀得到BM图形2。需要强调的是，BM图形仅仅裸露出开口区域3。
(2)制作栅(Gate)：
如图2所示，在BM图形2上通过物理气相沉积(PVD)进行Gate成膜，然后曝光，干法刻蚀得到Gate图形4。优选地，Gate图形4的材料优选为铜(Cu)。
(3)制作GI：
如图3所示，在整体上通过化学气相沉积(Chemical Vapor Deposition，CVD)进行GI成膜。优选地，GI薄膜5的材料优选为二氧化硅(SiO2)。
(4)制作源漏极：
如图4所示，在由GI薄膜5覆盖的Gate图形4上通过物理气相沉积(PVD)进行源漏极成膜，然后曝光，湿法刻蚀得到源漏极图形。优选地，源漏极6的材料优选为铜(Cu)。
(5)制作金属氧化物：
如图5所示，在由GI薄膜5覆盖的Gate图形4上、源漏极之间通过物理气相沉积(PVD)进行金属氧化物(IGZO)成膜，然后曝光，湿法刻蚀得到金属氧化物(IGZO)图形7。
(6)制作PV：
如图6所示，在整体上通过化学气相沉积(CVD)进行PV成膜，穿过PV薄膜8在源漏极6上通过干刻蚀得到像素(Pixel)的接触孔9。优选地，PV材料优选为SiO2。
(7)制作R/G/B：
如图7所示，在整体上进行R/G/B 10涂布，留出所述接触孔9，并曝光得到所需图形。
(8)制作ITO：
如图8所示，覆盖接触孔9以及所述开口区域3、通过物理气相沉积(PVD)进行ITO成膜，然后曝光，湿法刻蚀得到ITO图形11。
此外，本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，如图8所示，其主要包括基板1，基板1上具有BM图形2，并且所述BM图形2将开口区域3裸露出来，所述BM图形2上具有Gate图形4，所述基板1、BM图形2以及Gate图形4上具有GI薄膜5，在由GI薄膜5覆盖的Gate图形4上具有源漏极6，在由GI薄膜5覆盖的Gate图形4上、源漏极6之间具有IGZO薄膜7，在整体上具有PV薄膜8，并且PV薄膜8在对应源漏极6处具有接触孔9，在整体上进行R/G/B10涂布，留出所述接触孔9，覆盖接触孔9以及所述开口区域3具有ITO图形11。
综上所述，本发明的有益效果是：
本发明针对现有BOA结构BM难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用CuO做BM的共平面结构(Coplanar Structrue)的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构(coplanar)，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (9)

1.一种基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，具有如下步骤：
(1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧等离子体处理得到氧化铜作为遮挡层，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
(2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
(3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
(4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
(5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
(6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
(7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
(8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
2.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(1)中，是通过物理气相沉积进行铜成膜。
3.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(2)中，是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
4.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
5.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
6.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
7.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
8.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
9.一种基于IGZO-TFT的BOA液晶面板的结构，其特征在于，包括基板，所述基板上具有黑色矩阵图形，所述黑色矩阵图形由铜膜进行氧等离子体处理得到的氧化铜形成，所述黑色矩阵图形作为遮挡层，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
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