CN106200259A - The photomask cleaning of low sulfate radical residual concentration - Google Patents
The photomask cleaning of low sulfate radical residual concentration Download PDFInfo
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- CN106200259A CN106200259A CN201610563195.XA CN201610563195A CN106200259A CN 106200259 A CN106200259 A CN 106200259A CN 201610563195 A CN201610563195 A CN 201610563195A CN 106200259 A CN106200259 A CN 106200259A
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- photomask
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- hot water
- cold water
- out cleaning
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- 238000004140 cleaning Methods 0.000 title claims abstract description 83
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 101
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 81
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 43
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 43
- 239000007921 spray Substances 0.000 claims description 33
- 229910021529 ammonia Inorganic materials 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 15
- -1 sulfate radical Chemical class 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to photomask cleaning technical field, more specifically, relating to the photomask cleaning of a kind of low sulfate radical residual concentration, this technique includes: SPM solution cleans, cold water wash, hot water clean, SC1 solution adds that million sound clean, add thermal diffusion, ultraviolet light irradiates, secondary hot water cleans, secondary SC1 solution adds that million sound clean, secondary cold water wash and photomask dry.Sulfate ion concentration can be dropped to below 1ppb by the photomask cleaning using the low sulfate radical residual concentration of the present invention, can be effectively improved the service life of high-end photomask, and technological operation is simple, convenient and practical, and suitable further genralrlization is applied.
Description
Technical field
The present invention relates to photomask cleaning technical field, more particularly, it relates to a kind of low sulfate radical residual concentration
Photomask cleaning.
Background technology
In the whole flow process of semiconductor manufacturing, a portion is exactly the process in the middle of manufacturing from domain to wafer, i.e.
Photomask or title light shield (mask) manufacture, and the manufacture of photomask is the key component of Connection between Processes, and the manufacture of photomask comprises light
The cleaning of mask, the cleaning of photomask is typically with the cleaning method of sulphuric acid and hydrogen peroxide solution, above-mentioned mixed using
After closing liquid cleaning, the method the most primarily now removing residual sulphate ion is as follows:
1, remove the sulfate ion of residual with high purity deionized water and the cleaning of diluted alkaline liquid, this method is mainly pin
Removing the sulfate ion of photomask surface, residual concentration is at more than 10ppb；
2, removing sulfate ion with hot water, this method cannot be again when sulfate ion is reduced to finite concentration when
Removing the sulfate ion that photomask is profound further, residual concentration is at more than 2ppb；
Above method for the cleaning of general normal light mask, the residual concentration of last sulfate ion at more than 2ppb,
It is not met by the index request that sulfate ion is remained by high-end photomask.For this problem, a kind of low-sulfur of exploitation
The photomask cleaning of acid group residual concentration is the technical problem that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
The technical problem to be solved is: for overcoming the technical problem mentioned in above-mentioned background technology, existing offer
A kind of photomask cleaning of low sulfate radical residual concentration.
The technical solution adopted for the present invention to solve the technical problems is: the photomask of a kind of low sulfate radical residual concentration
Cleaning, this cleaning comprises the steps:
(1) SPM solution cleans
Use SPM solution that photomask surface is always cleaned；Remove the Organic substance of photomask surface such as: photoresist, hands
Finger mark, protection mould offset printing and other sol particle；Described SPM solution is H2SO4And H2O220:1～1:1 mixes by volume
Close the mixed solution formed, H2SO4Mass fraction is 98%, H2O2Mass fraction is 30%；
(2) cold water wash
Under normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is 2.0-2.5L/min, during spray
Between be 2-3min；Use rotation to add upper and lower shuttling movement spray, remove the SPM residual of photomask surface；
(3) one times hot water cleans
Using 60-80 DEG C of hot water that photomask is carried out cleaning showers, hot water flow is 1-1.5L/min, and spray time is 5-
10min；Use rotation to add upper and lower shuttling movement spray, remove photomask surface most sulfate ion residual；
(4) SC1 solution add million sound and clean
Under normal temperature condition, using SC1 solution to add million sound and photomask carries out cleaning showers, wherein, million acoustic energies are set to
50-75%, SC1 electrical conductivity of solution is ammonia and the hydrogen peroxide mixed liquor of 1000-2000 μ S/cm；Remove in cleaning process and bring into
Solid particle；
(5) thermal diffusion is added
By photomask at the N of confined space2Heating in atmosphere, heat time heating time according to test result, heating-up temperature is
25-200℃；Heating-up temperature is by being controlled after sulfate ion content in test photomask, it may be assumed that by test photomask
Sulfate ion concentration sets heating-up temperature, selects heating-up temperature in suitable scope.
(6) ultraviolet light irradiates
Photomask is carried out ultraviolet light Continuous irradiation 1-10min after being heated to the temperature set；By the sulfur in photomask
Acid ion resolves into SO2And S；While ultraviolet light irradiates, photomask is continuous heating in step (5) design temperature, makes
Sulfate radical within photomask irradiated by UV after catabolite SO2Accelerate in high temperature environments by photomask deep layer to surface
Diffusion motion, ultraviolet light irradiates and terminates to heat to terminate simultaneously.
(7) secondary hot water cleans
Using 60-80 DEG C of hot water that photomask is carried out cleaning showers, hot water flow is 1-1.5L/min, and spray time is 5-
10min；Use rotation to add upper and lower shuttling movement spray, clean the sulfur diffused out after photomask is heated by step (5) further
The SO that acid ion and step (6) ultraviolet light decompose out after irradiating2And S；
(8) secondary SC1 solution adds million sound cleanings
Under normal temperature condition, using SC1 solution to add million sound and photomask carries out cleaning showers, wherein, million acoustic energies are set to
50-75%, SC1 electrical conductivity of solution is ammonia and the hydrogen peroxide mixed liquor of 1000-2000 μ S/cm；Remove in cleaning process and bring into
Solid particle；
(9) secondary cold water wash
Under normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is 2.0-2.5L/min, during spray
Between be 2-3min；Use rotation to add upper and lower shuttling movement spray, remove the ammonia radical ion of photomask surface residual；
(10) photomask dries
Under room temperature condition, with 900-1200 turn/photomask dries by the speed of min.
Further, in step described in technique scheme (4) and step (8), the configuration of SC1 solution is: first use water and
Ammonia configuration electrical conductivity is the solution of 300-600 μ S/cm, and then adding hydrogen peroxide configuration and forming electrical conductivity is 1000-2000 μ
The mixed liquor of S/cm；The wavelength that wavelength is not higher than 193nm of described step (6) medium ultraviolet light.
Beneficial effect: compared with prior art, uses the photomask cleaning of the low sulfate radical residual concentration of the present invention
Sulfate ion concentration can be dropped to below 1ppb, can be effectively improved the service life of high-end photomask, technological operation is simple, side
Just practical, suitable further genralrlization is applied.
Accompanying drawing explanation
In describing embodiment below, the required accompanying drawing used does and introduces simply.
Fig. 1 show sulfate radical residual concentration comparison diagram on the processing step gained photomask using embodiment one, two, three；
Fig. 2 show sulfate radical residual concentration comparison diagram on the processing step gained photomask using embodiment one, four, five.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is further described, and the full content of the composition represented by example below does not limits
In necessary to the solution as the invention described in claim.The method that in embodiment, residual concentration is measured is: will
The high purity deionized water of 500ml, is heated to 90 DEG C, is put into by photomask in hot water and boils 2h, utilizes ion chromatograph to measure in water
Sulfate ion concentration.
Embodiment one
The photomask cleaning of the present invention, this cleaning comprises the steps:
(1) SPM solution cleans and uses SPM solution always to clean photomask surface；Described SPM solution is H2SO4With
H2O2The mixed solution that 3:1 is mixed to form by volume；
Under (2) cold water wash normal temperature conditions, using cold water that photomask is carried out cleaning showers, cold water flow is 2L/
Min, spray time is 3min；
(3) hot water clean and use 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(4) SC1 solution add 3MHZ million sound and clean under normal temperature condition, use SC1 solution to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(5) thermal diffusion is added by photomask at the N of confined space2Heating in atmosphere, heat time heating time is 10min, by light
Mask temperature is heated to 80 DEG C；
(6) ultraviolet light irradiates and photomask carries out after being heated to 80 DEG C 172nm ultraviolet light Continuous irradiation 3min；Simultaneously
Photomask is at 80 DEG C of continuous heating 3min of temperature；
(7) secondary hot water cleans and uses 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(8), under secondary SC1 solution adds 3MHZ million sound cleaning normal temperature condition, SC1 solution is used to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(9) under secondary cold water wash normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is
2.0L/min, spray time is 3min；
(10), under photomask dries room temperature condition, with the speed of 1000 turns/min, photomask is dried.Wherein, step (4)
With the configuration of SC1 solution in step (8) it is: first use water and ammonia to configure the solution that electrical conductivity is 500 μ S/cm, add the most again
Enter hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1500 μ S/cm.
Embodiment two
A kind of photomask cleaning removing sulfate radical, this cleaning step:
(1) SPM solution cleans and uses SPM solution always to clean photomask surface；Described SPM solution is H2SO4With
H2O2The mixed solution that 3:1 is mixed to form by volume；
Under (2) cold water wash normal temperature conditions, using cold water that photomask is carried out cleaning showers, cold water flow is 2L/
Min, spray time is 3min；
(3) hot water clean and use 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(4) SC1 solution add 3MHZ million sound and clean under normal temperature condition, use SC1 solution to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(5) ultraviolet light irradiates and photomask carries out 172nm ultraviolet light Continuous irradiation 3min；
(6) secondary hot water cleans and uses 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(7), under secondary SC1 solution adds 3MHZ million sound cleaning normal temperature condition, SC1 solution is used to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(8) under secondary cold water wash normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is
2.0L/min, spray time is 3min；
(9), under photomask dries room temperature condition, with the speed of 1000 turns/min, photomask is dried.Wherein, step (4)
With the configuration of SC1 solution in step (7) it is: first use water and ammonia to configure the solution that electrical conductivity is 500 μ S/cm, add the most again
Enter hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1500 μ S/cm
Embodiment three
A kind of photomask cleaning removing sulfate radical, this cleaning step:
(1) SPM solution cleans and uses SPM solution always to clean photomask surface；Described SPM solution is H2SO4With
H2O2The mixed solution that 3:1 is mixed to form by volume；
Under (2) cold water wash normal temperature conditions, using cold water that photomask is carried out cleaning showers, cold water flow is 2L/
Min, spray time is 3min；
(3) hot water clean and use 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(4) SC1 solution add 3MHZ million sound and clean under normal temperature condition, use SC1 solution to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(5) secondary hot water cleans and uses 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(6), under secondary SC1 solution adds 3MHZ million sound cleaning normal temperature condition, SC1 solution is used to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(7) under secondary cold water wash normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is
2.0L/min, spray time is 3min；
(8), under photomask dries room temperature condition, with the speed of 1000 turns/min, photomask is dried.Wherein, step (4)
With the configuration of SC1 solution in step (6) it is: first use water and ammonia to configure the solution that electrical conductivity is 500 μ S/cm, add the most again
Enter hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1500 μ S/cm.
Above-described embodiment one is according to present invention process step；Embodiment two is heating to be expanded on the basis of embodiment one
Take a walk and suddenly remove；Cancel continuous heating when ultraviolet light irradiates；Embodiment three is by ultraviolet lighting on the basis of embodiment two
Penetrate step to remove.After three kinds of processing steps, on photomask, sulfate radical residual concentration is 0.77ppb, 1.56ppb, 1.87ppb,
Test result as shown in Figure 1, from accompanying drawing, uses the process step of the invention, and sulfate ion residual concentration has the biggest
Reduction amplitude, residual concentration be less than 1ppb.
Embodiment four
The photomask cleaning of the present invention, this cleaning comprises the steps:
(1) SPM solution cleans and uses SPM solution always to clean photomask surface；Described SPM solution is H2SO4With
H2O2The mixed solution that 5:1 is mixed to form by volume；
Under (2) cold water wash normal temperature conditions, using cold water that photomask is carried out cleaning showers, cold water flow is 2L/
Min, spray time is 3min；
(3) hot water clean and use 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(4) SC1 solution add 3MHZ million sound and clean under normal temperature condition, use SC1 solution to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(5) thermal diffusion is added by photomask at the N of confined space2Heating in atmosphere, heat time heating time is 10min, heating
Temperature is 160 DEG C；
(6) ultraviolet light irradiates and photomask carries out after being heated to 160 DEG C 172nm ultraviolet light Continuous irradiation 3min；Simultaneously
Photomask is at 160 DEG C of continuous heating 3min of temperature；
(7) secondary hot water cleans and uses 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(8), under secondary SC1 solution adds 3MHZ million sound cleaning normal temperature condition, SC1 solution is used to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(9) under secondary cold water wash normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is
2.0L/min, spray time is 3min；
(10), under photomask dries room temperature condition, with the speed of 1000 turns/min, photomask is dried.Wherein, step (4)
With the configuration of SC1 solution in step (8) it is: first use water and ammonia to configure the solution that electrical conductivity is 500 μ S/cm, add the most again
Enter hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1500 μ S/cm.
Embodiment five
The photomask cleaning of the present invention, this cleaning comprises the steps:
(1) SPM solution cleans and uses SPM solution always to clean photomask surface；Described SPM solution is H2SO4With
H2O2The mixed solution that 5:1 is mixed to form by volume；
Under (2) cold water wash normal temperature conditions, using cold water that photomask is carried out cleaning showers, cold water flow is 2L/
Min, spray time is 3min；
(3) hot water clean and use 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 5min；
(4) SC1 solution add 3MHZ million sound and clean under normal temperature condition, use SC1 solution to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(5) thermal diffusion is added by photomask at the N of confined space2Heating in atmosphere, heat time heating time is 10min, heating
Temperature is 160 DEG C；
(6) ultraviolet light irradiates and after being heated to the temperature set, photomask is carried out 172nm ultraviolet light Continuous irradiation
10min；With photomask at 160 DEG C of continuous heating 10min of temperature；
(7) secondary hot water cleans and uses 80 DEG C of hot water that photomask is carried out cleaning showers, and hot water flow is 1.3L/min,
Spray time is 10min；
(8), under secondary SC1 solution adds 3MHZ million sound cleaning normal temperature condition, SC1 solution is used to add 3MHZ million sound to photomask
Carrying out cleaning showers, wherein, million acoustic energies are set to 75%, and SC1 electrical conductivity of solution is the ammonia of 1500 μ S/cm and hydrogen peroxide mixes
Close liquid；
(9) under secondary cold water wash normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is
2.0L/min, spray time is 3min；
(10), under photomask dries room temperature condition, with the speed of 1000 turns/min, photomask is dried.Wherein, step (4)
With the configuration of SC1 solution in step (8) it is: first use water and ammonia to configure the solution that electrical conductivity is 500 μ S/cm, add the most again
Enter hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1500 μ S/cm.
Above-described embodiment four and five, processing step is identical with embodiment one, have modified technological parameter.Embodiment four is being implemented
Following technological parameter is have modified: the H that 1.SPM solution cleans on the basis of one2SO4And H2O2Volume ratio；2. add adding of thermal diffusion
Heat time and heating-up temperature.Embodiment five is implementing to have modified on the basis of one following technological parameter: 1.SPM solution cleans
H2SO4And H2O2Volume ratio；2. add heat time heating time and the heating-up temperature of thermal diffusion；3. the time that ultraviolet light irradiates；4. second heat
The spray time that water cleans.The sulfate radical residual ion concentration of the embodiment four that draws of experiment and embodiment five is: 0.50ppb and
0.26ppb, three kinds of results contrast are as shown in Figure 2.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple amendment to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can realize without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty phase one
The widest scope caused.
Claims (3)
1. a photomask cleaning for low sulfate radical residual concentration, is characterized in that: this cleaning comprises the steps:
(1) SPM solution cleans
Use SPM solution that photomask surface is always cleaned；Described SPM solution is H2SO4And H2O220:1～1:1 by volume
The mixed solution being mixed to form, H2SO4Mass fraction is 98%, H2O2Mass fraction is 30%；
(2) cold water wash
Under normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is 2.0-2.5L/min, and spray time is
2-3min；
(3) one times hot water cleans
Using 60-80 DEG C of hot water that photomask is carried out cleaning showers, hot water flow is 1-1.5L/min, and spray time is 5-
10min；
(4) SC1 solution add million sound and clean
Under normal temperature condition, using SC1 solution to add million sound and photomask carries out cleaning showers, wherein, million acoustic energies are set to 50%-
75%, SC1 electrical conductivity of solution is ammonia and the hydrogen peroxide mixed liquor of 1000-2000 μ S/cm；
(5) thermal diffusion is added
By photomask at the N of confined space2Heating in atmosphere, heating-up temperature is 25-200 DEG C, and temperature can be according to technological requirement
Being set, heat time heating time is the time that photomask reaches design temperature；
(6) ultraviolet light irradiates
Photomask is carried out ultraviolet light Continuous irradiation 1-10min after being heated to the temperature set；Photomask is in irradiating ultraviolet light
While, in the range of step (5) design temperature, carry out continuous heating；Ultraviolet light irradiates and terminates to heat also to terminate simultaneously；
(7) secondary hot water cleans
Using 60-80 DEG C of hot water that photomask is carried out cleaning showers, hot water flow is 1-1.5L/min, and spray time is 5-
10min；
(8) secondary SC1 solution adds million sound cleanings
Under normal temperature condition, using SC1 solution to add million sound and photomask carries out cleaning showers, wherein, million acoustic energies are set to 50-
75%, SC1 electrical conductivity of solution is ammonia and the hydrogen peroxide mixed liquor of 1000-2000 μ S/cm；
(9) secondary cold water wash
Under normal temperature condition, using cold water that photomask is carried out cleaning showers, cold water flow is 2.0-2.5L/min, and spray time is
2-3min；
(10) photomask dries
Under room temperature condition, with 900-1200 turn/photomask dries by the speed of min.
The photomask cleaning of a kind of low sulfate radical residual concentration the most according to claim 1, is characterized in that: described step
Suddenly in (4) and step (8), the configuration of SC1 solution is: first use water and solution that ammonia configuration electrical conductivity is 300-600 μ S/cm,
Then add hydrogen peroxide configuration and form the mixed liquor that electrical conductivity is 1000-2000 μ S/cm.
The photomask cleaning of a kind of low sulfate radical residual concentration the most according to claim 1, is characterized in that: described step
Suddenly the wavelength that wavelength is not higher than 193nm of (6) medium ultraviolet light.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220357647A1 (en) * | 2021-04-29 | 2022-11-10 | Skc Solmics Co., Ltd. | Blank mask and photomask using the same |
| CN116274069A (en) * | 2022-11-11 | 2023-06-23 | 湖南普照信息材料有限公司 | Method for cleaning mask plate glass substrate |
| CN116850889A (en) * | 2023-06-19 | 2023-10-10 | 苏州桔云科技有限公司 | Current detection type multi-stock solution concentration automatic proportioning process |
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| US20220357647A1 (en) * | 2021-04-29 | 2022-11-10 | Skc Solmics Co., Ltd. | Blank mask and photomask using the same |
| US12461439B2 (en) * | 2021-04-29 | 2025-11-04 | Sk Enpulse Co., Ltd. | Blank mask and photomask using the same |
| CN116274069A (en) * | 2022-11-11 | 2023-06-23 | 湖南普照信息材料有限公司 | Method for cleaning mask plate glass substrate |
| CN116850889A (en) * | 2023-06-19 | 2023-10-10 | 苏州桔云科技有限公司 | Current detection type multi-stock solution concentration automatic proportioning process |
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