CN106206935B - A method of control spin wave transmission - Google Patents
A method of control spin wave transmission Download PDFInfo
- Publication number
- CN106206935B CN106206935B CN201610553896.5A CN201610553896A CN106206935B CN 106206935 B CN106206935 B CN 106206935B CN 201610553896 A CN201610553896 A CN 201610553896A CN 106206935 B CN106206935 B CN 106206935B
- Authority
- CN
- China
- Prior art keywords
- spin wave
- wave
- electric field
- spin
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a kind of method of control spin wave transmission, which belongs to area of Spintronics.This method can effectively change magnetic waveguide material inner exchanging action intensity by applying electric field on spin wave waveguiding structure.By electric field controls exchange constant size, it can achieve regulation spin wave dispersion relation and then realize the purpose of control spin wave transmission.The present invention can realize the accurate control in part transmitted to spin wave by electric field controls exchange interaction with super low-power consumption, provide possibility for the compatible magnon device practical application of super low-power consumption, cmos process flow.
Description
Technical field
The invention belongs to spinning electron technical fields, more particularly, to a kind of method of control spin wave transmission.
Background technique
Magnon (magnonics) is acknowledged as most potential information biography of rear COMS epoch with its unique advantage
Defeated and processing technique.In magnon, carry information be the collective's precession i.e. spin wave of electron spin rather than dissipativeness is electric
Lotus is mobile.It is said in principle, magneton (quantum of spin wave) allows to realize information under the premise of not moving any object particle
Transmission and processing, thus there is no joule heat dissipation.In magnon, information can encode the amplitude and phase in spin wave
Position, thus effectively control as where the core for promoting magnon practical application what spin wave was propagated.In recent years, it emerges in large numbers
Large quantities of logical devices based on spin wave amplitude or phase, however, up to the present, majority of logics function realize according to
Rely the oersted field in electric current to change spin wave dispersion relation to realize the control to spin wave transmission.
Fig. 1 (a) is a kind of typical structure that spin wave transmission is controlled using magnetic field, is generated using electric current in current-carrying conductor
Additional oersted field changes the size of effective bias-field, to realize the regulation to spin wave dispersion relation to control spin wave biography
It is defeated.
However, magnetic field control has some intrinsic defects and problem: firstly, generating local oersted field by current-carrying conductor
Device architecture will be made to complicate (especially in the design of curved waveguide), and current-carrying conductor continues dissipative system power and will support
The low-power consumption advantage of demagnetization oscillator device.Secondly, spatial distribution inhomogeneities and the adjacent waveguide branch of local oersted field
Stray magnetic field by the low reliability and high bit-error of the system that will lead to.Thus, it is how real by simply designing energy-efficient ground
The control of existing spin wave transmission, remains as a technological difficulties of this field.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides the spin waves based on electric field to transmit control
Method by applying electric field, the magnetic waveguide material inner exchanging action intensity of adjusting, and then regulates and controls the dispersion relation of spin wave,
It realizes the electric field accuracy controlling transmitted to spin wave, thus solves the existing design complexity of classical magnetic field control means, high energy consumption
With the technical problems such as system reliability is low.
To achieve the above object, the present invention provides a kind of electric field controls spin wave transmission method, the method includes,
Apply electric field on spin wave waveguiding structure, can effectively change magnetic waveguide material inner exchanging work by changing electric field strength
Use intensity.By electric field controls exchange constant size, spin wave dispersion relation can be regulated and controled, change the wave number of spin wave, phase velocity,
Wavelength and group velocity, to realize the purpose of control spin wave transmission.
Preferably, the electric field can be introduced by spin wave waveguiding structure: first electrode/the first insulating layer/spin wave
Waveguide material/second insulating layer/second electrode or first electrode/first insulating layer/spin wave waveguide material/second electrode, or
First electrode/spin wave waveguide material/second insulating layer/second electrode or first electrode/spin wave waveguide material/second electricity
Pole can introduce normal electric field by applying voltage between two electrode, and adjusting voltage can change electric field strength.It is theoretical
On, electric field can apply along any direction, but regulating effect is the most significant when electric field is perpendicular to spin wave planar waveguide.
Specifically, increase voltage between first electrode and second electrode, along spin wave planar waveguide normal direction electric field strength with
Increase, waveguide material inner exchanging action intensity accordingly weakens, so that the wave number of the spin wave of ducting increases, wavelength
Reduce, phase velocity increases.In other words, the propagation parameter of spin wave changes with electric field strength and is monotonically changed, this electric field regulation effect
The control to spin wave transmission should be can be used to implement.
Preferably, the waveguide material can be feeromagnetic metal simple substance or ferrimag or dilute magnetic semiconductor, or magnetic
Insulator or semi-metallic or multi-iron material.
Preferably, the spin wave excitation mode can be reversed bulk wave (the forward volume wave, FV) or
Forward direction bulk wave (the backward volume wave, BV) or surface wave (surface wave) structure.Specifically, reversed
In bulk wave, material magnetizes along face, and applied bias magnetic fieldIt is parallel to wave vectorIn forward direction bulk wave, applied bias magnetic fieldApply perpendicular to planar waveguide, wave vectorDirection is in face；In surface wave, applied bias magnetic fieldAnd wave vectorDirection is equal
It is in face and orthogonal, group velocityAnd phase velocityDirection having the same.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
(1) the oersted field control mode of electric current belongs to " open type ", and in device operation, electric current flows continuously through production
The current-carrying conductor of magnetisation field generates Joule heat；And device belongs to " normally-off " in electric field controls mode, removes state of a control switching
Capacitor charge and discharge power consumption in the process, device hardly absorb extra power consumption from system.Thus passed by electric field controls spin wave
The defeated classical magnetic field that can evade controls intrinsic high energy consumption, low efficacy problems；
(2) electric field is introduced by plane-parallel capacitor and is adapted to complicated waveguide shapes design requirement, obtained global equal
One control can also realize the accurate control in part；And the spatial distribution of the oersted field of electric current has in classical magnetic field control
Heterogeneity, and mutual crosstalk is also easy to produce between adjacent control magnetic field.Thus magnon is substantially reduced using electric field controls
The complexity of device design；
(3) mature CMOS electric field controls technology can be used for reference using electric field controls, while can promote magnon device
The compatibility of part and cmos device accelerates the practicalization for promoting magnon.
Detailed description of the invention
Fig. 1 (a) is the principle schematic diagram that traditional oersted field controls spin wave transmission, and Fig. 1 (b) mentions for the present invention
The principle schematic diagram of the electric field controls spin wave of confession.
Fig. 2 is three kinds of excitation mode schematic illustrations of spin wave: (a) reversed bulk wave, (b) forward direction bulk wave, (c) surface
Wave.
Fig. 3 (a) is the modular concept figure of VASP simulation in the embodiment of the present invention 1, and Fig. 3 (b) is mould in the embodiment of the present invention 1
Type average potential below 0.0 (black curve) and 5V/nm (Grey curves) condition is distributed.
Fig. 4 is exchange constant in the embodiment of the present invention 1 with electric field strength change curve.
Fig. 5 is micro- magnetic simulation model schematic diagram in the embodiment of the present invention 2.
Fig. 6 is the spatial domain characteristic of spin wave in the embodiment of the present invention 2, and figure (a)-(f) respectively corresponds 0,1V/nm, 2V/
Nm, 3V/nm, 4V/nm, 5V/nm.
Fig. 7 (a) is surface spin waves wave number k and wavelength X with electric field change curve, and Fig. 7 (b) is that spin wave dispersion relation is bent
Line (exchanged xy axis), each branch is corresponding in turn to 0,1V/nm, 2V/nm, 3V/nm, 4V/nm, 5V/nm situation from top to bottom.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
The present invention provides a kind of methods of electric field controls spin wave transmission, are applied to spin wave waveguiding structure by changing
On electric field strength can effectively change magnetic waveguide material inner exchanging action intensity.It is big by electric field controls exchange constant
It is small, it can achieve regulation spin wave dispersion relation and then realize the purpose of control spin wave transmission.
The method of regulation spin wave transmission provided by the invention specifically: by applying electric field on spin wave waveguiding structure
To regulate and control spin wave dispersion relation, the control that spin wave is transmitted in realization.
Wherein, the control of spin wave transmission is specifically included: the control to the wavelength of spin wave, phase velocity, wave number or group velocity
System.Specifically, increase voltage between first electrode and second electrode, the electric field strength along spin wave planar waveguide normal direction increases therewith
Greatly, waveguide material inner exchanging action intensity accordingly weakens, so that the wave number of the spin wave of ducting increases, wavelength subtracts
Small, phase velocity increases.
In embodiments of the present invention, electric field can apply along any direction, but when electric field is perpendicular to spin wave planar waveguide
When regulating effect it is the most significant.Preferably, it is applied to the direction of the electric field on the spin wave waveguiding structure are as follows: along spin
Sonic wave guide plane normal direction.
In embodiments of the present invention, spin wave waveguiding structure includes: the first electrode layer set gradually, spin sonic wave guide material
The bed of material and the second electrode lay.
As an embodiment of the present invention, spin wave waveguiding structure further include: be arranged in the first electrode layer and institute
State the first insulating layer between spin wave waveguide material layer.
As an embodiment of the present invention, as shown in Fig. 1 (b), spin wave waveguiding structure further include: setting is described the
Second insulating layer between two electrode layers and the spin wave waveguide material layer.
Wherein, the material of spin wave waveguide material layer be feeromagnetic metal simple substance, ferrimag, dilute magnetic semiconductor, it is magnetic absolutely
Edge body, semi-metallic or multi-iron material.
Fig. 2 shows three kinds of excitation mode schematic illustrations of spin wave: (a) reversed bulk wave, (b) forward direction bulk wave, (c)
Surface wave；Spin wave excitation mode can be reversed bulk wave (the forward volume wave, FV) or forward direction bulk wave (the
Backward volume wave, BV) or surface wave (surface wave) structure.Specifically, in reversed bulk wave, material edge
Magnetize in face, and applied bias magnetic fieldIt is parallel to wave vectorIn forward direction bulk wave, applied bias magnetic fieldIt is flat perpendicular to waveguide
Face applies, wave vectorDirection is in face；In surface wave, applied bias magnetic fieldAnd wave vectorDirection is in face and vertical mutually
Directly, group velocityAnd phase velocityDirection having the same.
Below by the elaboration of specific embodiment, to further illustrate substantive distinguishing features of the present invention and significant progress, but
The present invention is only limitted to absolutely not embodiment.
Embodiment 1
The present embodiment discloses magnetic waveguide by first-principles calculations and hands under the effect of planar waveguide normal electric field
Change action intensity changing rule.
Calculate using shown in model such as Fig. 3 (a), being 3 layers of bcc Fe (001) atomic layer, vacuum layer with a thickness of
Electric field along c-axis direction is introduced by dipole layer method, and applying electric field strength range is that -5V/nm arrives 5V/nm.It calculates based on the
One property principle VASP software package carries out, and exchange integral J is derived from by the energy difference of antiferromagnetic state and ferrimagnetic state.
To simplify description, iron atom in Fig. 3 (a) is from left to right successively labeled as to 1,2,3.Only consider that arest neighbors exchange is made
With available ferrimagnetic state ENERGY EFWith antiferromagnetic state ENERGY EAFIt is respectively as follows:
EF=Enm-8JS1S2-8JS2S3
Wherein Enm is the nonmagnetic portion of gross energy, and J is exchange integral, Si It is ferrimagnetic state (antiferromagnetic state) structure
Atom i resultant spin (withFor unit).
It can be obtained by above-mentioned two formula, the expression formula of exchange integralPhenomenological parameters
Exchange constant A can be contacted by following formula and micro-parameter exchange integral J foundation in Heisenberg Model, for body-centered cubic
Structure A=2JS2/a；Wherein a is lattice constant, and exchange stiffness D is D=2JSa2；Simulation gained exchange integral J, exchange constant A,
Exchange stiffness D is as shown in table 1 below with electric field change result.
Table 1
As shown in first-principles calculations result in Fig. 4, the results showed that, the exchange constant of 3 layers of Fe (001) film is vertical
Changed really under the electric field action of film surface.It is each compared to known linear magneto-electric effect such as Electric Field Modulated magnetic
Anisotropy, Electric Field Modulated saturation magnetization, electric field show fairly obvious non-linear modulation to exchange constant and act on.It is specific and
Speech, calculating gained null field exchange constant is 1.85 × 10-11J/m derives resulting value (1.88 μ with from the Curie temperature of bcc Fe
Erg/cm) perfection agrees with.With the increase of electric field strength, exchange constant quickly reduces.Particularly, work as electric field strength
When for 5V/nm, exchange constant reduces about 80%.
Thus illustrate, realize it is feasible to the modulation of exchange interaction intensity by extra electric field, and exchange constant
Electric Field Modulation is very significant.
Embodiment 2
The present embodiment discloses the influence that Electric Field Modulated exchange interaction transmits spin wave, spin wave wave by the simulation of micro- magnetic
The corresponding changing rule of number, phase velocity, wavelength, it was demonstrated that utilize the feasibility of electric field regulation exchange constant control spin wave transmission.
Simulation is carried out using the OOMMF software package based on LLG equation, and special consideration should be given to Electric Field Modulated exchange interaction effects for calculating
It answers:
WhereinTo normalize magnetization vector, MsFor saturation magnetization, α is gilbert's decay factor, γ
For gilbert's gyromagnetic ratio.For effective field, including Heisenberg's exchange field, magnetic anisotropy field, demagnetizing field and applied bias
Magnetic field can indicate are as follows:
Wherein exchange constantIt is that electric field relies on.The model used is calculated as shown in figure 5, simulating Electric Field on Surface
The influence of wave transmission, wherein waveguide is 500 × 500 × 0.2866nm3Thin film planar waveguide, along the y-axis direction apply biasing magnetic
Field size μ0H0=1T, angular frequency are 4 × 1011The sinusoidal microwave source of rad/s is for exciting the surface wave propagated in the x-direction, mould
The proposed adoption Exemplary parameter values of Fe:
(1) saturation magnetization MS=1.75 × 106A/m；
(2) gilbert attenuation factor=0.03；
(3) gilbert's gyromagnetic ratio γ=2.211 × 105m/(A·s)；
(4) anisotropy constant K=0 (having ignored the relatively small magnetic anisotropy energy of cubic system Fe).
The critical exchange length of iron under null field and 5V/nm electric fieldRespectively 3.1nm and 1.3nm, due to
Maximum mesh unit size does not allow more than critical exchange length, and discretization size of mesh opening is selected as 1nm × 1nm × 0.2866nm,
And two-dimensional and periodic boundary condition is applied in x/y plane.
Normal electric field act on lower surface spin wave spatial domain characteristic such as Fig. 6 (a-f) shown in, it is clear that with electric field strength from
0, which increases to 5V/nm wave number, accordingly increased.In other words, the phase velocity of surface spin waves and wavelength can be changed by extra electric field
Become.Particularly, compared to null field, the electric field of 5V/nm can halve spin wave wavelength.
After considering exchange interaction, it is in the analytical form of finite size ferromagnetic thin film inner surface spin wave dispersion relationWherein ωex=ω0+λexωMk2, ω0=γ μ0H0, ωM=γ μ0Ms,D is film thickness.Fig. 7 (b) is the dispersion relation curve considered after Electric Field Modulated exchange constant effect.With
Electric field strength increase, exchange interaction weaken, dispersion curve branch accordingly moves down in ω-k view.For given load
Wave frequency rate, this will lead to wave number increase.Detailed simulation calculated result is as shown in table 2.
Table 2
| Electric field strength (V/nm) | λ(nm) | k(×109rad/m) | kth(×109rad/m) |
| 0 | 45.170 | 0.139 | 0.139 |
| ±1 | 44.768 | 0.140 | 0.141 |
| ±2 | 43.300 | 0.145 | 0.148 |
| ±3 | 38.217 | 0.164 | 0.164 |
| ±4 | 29.967 | 0.210 | 0.199 |
| ±5 | 19.621 | 0.320 | 0.313 |
Thus illustrate, by extra electric field modulate exchange interaction intensity can with Effective Regulation surface spin waves dispersion relation,
Realize the Effective Regulation to spin wave wave number, phase velocity, wavelength and group velocity, thus extra electric field can effectively control surface spin waves
Transmission.
Embodiment 3
Bias magnetic field in face in the x-direction, the other the same as in Example 2.The result shows that modulating exchange interaction by extra electric field
Intensity can realize effective tune to spin wave wave number, phase velocity, wavelength and group velocity with the dispersion relation of the reversed bulk wave of Effective Regulation
Control, thus extra electric field can effectively control the transmission of reversed bulk wave.
Embodiment 4
Magnetic field applies in the z-direction perpendicular to planar waveguide, the other the same as in Example 2., exchange interaction is modulated by extra electric field
Intensity can be, to the dispersion relation of bulk wave, to realize effective tune to spin wave wave number, phase velocity, wavelength and group velocity before Effective Regulation
Control, thus extra electric field can effectively control the preceding transmission to bulk wave.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (7)
1. a kind of method of control spin wave transmission, which is characterized in that adjusted by applying electric field on spin wave waveguiding structure
Spin wave dispersion relation is controlled, realizes the control transmitted to spin wave；
The spin wave waveguiding structure includes: the first electrode layer set gradually, spin wave waveguide material layer and the second electrode lay；
3 layers of bcc Fe (001) atomic layer are as waveguide material.
2. the method as described in claim 1, which is characterized in that the control to spin wave transmission specifically includes: to spin
The control of the wavelength, phase velocity, wave number or group velocity of wave.
3. the method as described in claim 1, which is characterized in that be applied to the electric field on the spin wave waveguiding structure
Direction are as follows: along spin wave planar waveguide normal direction.
4. the method as described in claim 1, which is characterized in that the spin wave waveguiding structure further include: setting is described the
The first insulating layer between one electrode layer and the spin wave waveguide material layer.
5. method as described in claim 1 or 4, which is characterized in that the spin wave waveguiding structure further include: be arranged described
Second insulating layer between the second electrode lay and the spin wave waveguide material layer.
6. the method as described in claim 1, which is characterized in that the application electric field can change the work of the exchange inside waveguide material
The control transmitted to spin wave is realized to change spin wave dispersion relation with intensity.
7. such as claim 1-4,6 described in any item methods, which is characterized in that the mode of excitation of spin wave is preceding to bulk wave mould
Formula, reversed bulk wave mode or surface wave mode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610553896.5A CN106206935B (en) | 2016-07-14 | 2016-07-14 | A method of control spin wave transmission |
| PCT/CN2016/093987 WO2018010241A1 (en) | 2016-07-14 | 2016-08-08 | Spin wave transmission control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610553896.5A CN106206935B (en) | 2016-07-14 | 2016-07-14 | A method of control spin wave transmission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206935A CN106206935A (en) | 2016-12-07 |
| CN106206935B true CN106206935B (en) | 2019-01-04 |
Family
ID=57476175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610553896.5A Active CN106206935B (en) | 2016-07-14 | 2016-07-14 | A method of control spin wave transmission |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106206935B (en) |
| WO (1) | WO2018010241A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10274571B2 (en) * | 2017-01-18 | 2019-04-30 | Samsung Electronics Co., Ltd. | Method and apparatus for measuring exchange stiffness at a patterned device level |
| CN107275478B (en) * | 2017-06-16 | 2019-09-10 | 电子科技大学 | The modulator approach of spin wave in a kind of automatic biasing magnon waveguide |
| CN110265760B (en) * | 2019-06-20 | 2021-06-01 | 武汉工程大学 | A magnetonic crystal structure that controls the direction of spin wave propagation |
| CN111064066B (en) * | 2019-12-31 | 2021-02-09 | 南京师范大学 | A terahertz signal generator that can be used for integrated chips, a terahertz signal generation method and a control method |
| CN111355007B (en) * | 2020-02-15 | 2021-02-19 | 杭州电子科技大学 | Y3Fe5O12Magneton waveguide spin wave band-pass filter and regulation and control method thereof |
| CN112035390A (en) * | 2020-08-28 | 2020-12-04 | 中国科学院微电子研究所 | Data transmission device and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273406A (en) * | 2005-09-29 | 2008-09-24 | 财团法人首尔大学校产学协力财团 | Method for generating strong spin wave and spin device for ultra-high speed information processing using spin wave |
| WO2014038015A1 (en) * | 2012-09-05 | 2014-03-13 | 株式会社日立製作所 | Spin wave switch and fpga using same |
| WO2014188525A1 (en) * | 2013-05-22 | 2014-11-27 | 株式会社日立製作所 | Spin wave device and logic circuit in which spin wave device is used |
| CN104767020A (en) * | 2015-03-20 | 2015-07-08 | 复旦大学 | A spin-wave directional transmission waveguide structure |
| CN104779342A (en) * | 2015-04-20 | 2015-07-15 | 北京航空航天大学 | Logic device based on spin wave interference and multiferroic material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4384183B2 (en) * | 2007-01-26 | 2009-12-16 | 株式会社東芝 | Magnetoresistive element and magnetic memory |
| JP5155907B2 (en) * | 2009-03-04 | 2013-03-06 | 株式会社東芝 | Signal processing device using magnetic film and signal processing method |
-
2016
- 2016-07-14 CN CN201610553896.5A patent/CN106206935B/en active Active
- 2016-08-08 WO PCT/CN2016/093987 patent/WO2018010241A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273406A (en) * | 2005-09-29 | 2008-09-24 | 财团法人首尔大学校产学协力财团 | Method for generating strong spin wave and spin device for ultra-high speed information processing using spin wave |
| WO2014038015A1 (en) * | 2012-09-05 | 2014-03-13 | 株式会社日立製作所 | Spin wave switch and fpga using same |
| WO2014188525A1 (en) * | 2013-05-22 | 2014-11-27 | 株式会社日立製作所 | Spin wave device and logic circuit in which spin wave device is used |
| CN104767020A (en) * | 2015-03-20 | 2015-07-08 | 复旦大学 | A spin-wave directional transmission waveguide structure |
| CN104779342A (en) * | 2015-04-20 | 2015-07-15 | 北京航空航天大学 | Logic device based on spin wave interference and multiferroic material |
Non-Patent Citations (2)
| Title |
|---|
| "Bulk spin-wave electrodynamics of an antiferromagnetic plate in a constant external electric field";A. S. Savchenko et al.;《Physics of the Solid State》;20080615;第50卷(第6期);1091-1102 |
| "Magneto-electric tuning of the phase of propagating spin waves";Mingqiang Bao et al.;《Applied Physics Letters》;20120711;第101卷(第2期);022409(1-4) |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206935A (en) | 2016-12-07 |
| WO2018010241A1 (en) | 2018-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106206935B (en) | A method of control spin wave transmission | |
| Zhang et al. | Motion of skyrmions in nanowires driven by magnonic momentum-transfer forces | |
| Gruszecki et al. | Goos-Hänchen shift of a spin-wave beam transmitted through anisotropic interface between two ferromagnets | |
| Wang et al. | Controlled modification of skyrmion information in a three-terminal racetrack memory | |
| Khivintsev et al. | Nonlinear ferromagnetic resonance in permalloy films: A nonmonotonic power-dependent frequency shift | |
| Macià et al. | Spin wave excitation patterns generated by spin torque oscillators | |
| Firastrau et al. | Modeling of the perpendicular polarizer-planar free layer spin torque oscillator: Micromagnetic simulations | |
| Zhu et al. | Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets | |
| Rodrigues et al. | Nonlinear dynamics of topological ferromagnetic textures for frequency multiplication | |
| Sun et al. | Fast domain wall propagation under an optimal field pulse in magnetic nanowires | |
| CN104820298B (en) | A kind of TM TE magneto-optic modulators based on BiLuIG films | |
| Maurya et al. | Room temperature photon-magnon coupling in YIG-electric field coupled resonator system | |
| Cui et al. | Micromagnetic prediction strain and current co-mediated spindynamics in skyrmion-based spin-torque nano-oscillator | |
| CN115473576A (en) | Microwave two-photon radiation device and method for detecting weak magnetic field by using same | |
| CN107275478B (en) | The modulator approach of spin wave in a kind of automatic biasing magnon waveguide | |
| Zheng et al. | Spin wave propagation in uniform waveguide: effects, modulation and its application | |
| Kwiatkowski et al. | Optimal control of magnetization reversal in a monodomain particle by means of applied magnetic field | |
| Zhang et al. | Parity‐Time Symmetry in Magnetic Materials and Devices | |
| CN114639529A (en) | Artificial spinning ice nanostructure and spinning wave transmission regulation method | |
| CN106711321B (en) | A kind of spin wave wave plate | |
| CN115915905A (en) | Spin orbit torque driving amplitude frequency adjustable nano oscillator | |
| Yang et al. | Potential well inducing the motion of skyrmion and sensing distance | |
| Murugesh et al. | Bifurcation and chaos in spin-valve pillars in a periodic applied magnetic field | |
| Yang et al. | Asymmetric quantum synchronization generation in antiferromagnet-cavity systems | |
| CN118693490B (en) | A voltage-controlled adjustable spin wave phase shifter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |