CN106206915B - 一种光学芯片的集成结构及其制造方法 - Google Patents
一种光学芯片的集成结构及其制造方法 Download PDFInfo
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- CN106206915B CN106206915B CN201610782876.5A CN201610782876A CN106206915B CN 106206915 B CN106206915 B CN 106206915B CN 201610782876 A CN201610782876 A CN 201610782876A CN 106206915 B CN106206915 B CN 106206915B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- H10W72/00—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H10W74/114—
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- H10W90/00—
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- H10W72/07553—
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Abstract
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610782876.5A CN106206915B (zh) | 2016-08-31 | 2016-08-31 | 一种光学芯片的集成结构及其制造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610782876.5A CN106206915B (zh) | 2016-08-31 | 2016-08-31 | 一种光学芯片的集成结构及其制造方法 |
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| Publication Number | Publication Date |
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| CN106206915A CN106206915A (zh) | 2016-12-07 |
| CN106206915B true CN106206915B (zh) | 2018-08-03 |
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| CN201610782876.5A Active CN106206915B (zh) | 2016-08-31 | 2016-08-31 | 一种光学芯片的集成结构及其制造方法 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108173991A (zh) * | 2017-12-26 | 2018-06-15 | 广东欧珀移动通信有限公司 | 电子装置 |
| CN109119347B (zh) * | 2018-09-03 | 2021-08-10 | 深圳市泓亚智慧电子有限公司 | 一种可穿戴设备的生物特征光学传感器的封装方法 |
| CN113539842B (zh) * | 2020-04-16 | 2024-06-18 | 光宝科技新加坡私人有限公司 | 封装传感器的制造方法 |
| CN114300932B (zh) * | 2021-12-01 | 2024-04-26 | 上海炬佑智能科技有限公司 | 芯片封装结构、形成方法及电子设备 |
| CN117276262A (zh) * | 2023-09-21 | 2023-12-22 | 杭州道铭微电子有限公司 | 一种多芯片dTOF封装结构及封装方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103050603B (zh) * | 2011-10-17 | 2016-03-23 | 展晶科技(深圳)有限公司 | Led封装结构的制作方法 |
| US9772404B2 (en) * | 2013-01-31 | 2017-09-26 | Sharp Kabushiki Kaisha | Optical sensor and electronic device |
| US10884551B2 (en) * | 2013-05-16 | 2021-01-05 | Analog Devices, Inc. | Integrated gesture sensor module |
| CN205452283U (zh) * | 2016-01-04 | 2016-08-10 | 歌尔声学股份有限公司 | 一种光学芯片的封装结构 |
| CN206098450U (zh) * | 2016-08-31 | 2017-04-12 | 歌尔股份有限公司 | 一种光学芯片的集成结构 |
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| CN106206915A (zh) | 2016-12-07 |
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Effective date of registration: 20200608 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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Address after: F / F, phase II, Qingdao International Innovation Park, 1 Keyuan Weiyi Road, Laoshan District, Qingdao City, Shandong Province, 266104 Patentee after: Geer Microelectronics Co.,Ltd. Country or region after: China Address before: Room 103, 396 Songling Road, Laoshan District, Qingdao City, Shandong Province 266104 Patentee before: Goer Microelectronics Co.,Ltd. Country or region before: China |