CN106206474A - A kind of encapsulating structure improving Frit packaging machinery intensity and method for packing thereof - Google Patents

Abstract

The invention discloses a packaging structure and a packaging method for improving the mechanical strength of Frit packaging. A metal film layer is fabricated on a substrate; a Frit packaging layer and an inorganic quantum dot nano film layer are prepared in the packaging area of a cover glass; It is docked with the encapsulation area of the substrate; the encapsulation area of the cover glass and the substrate is irradiated by a light source, so that the cover glass and the substrate are welded and sealed; the invention uses an inorganic quantum dot nano film layer to enhance the Frit encapsulation strength, and the fusing Frit encapsulation layer is permeable Enter the gap between the nano-film layers to form a composite reinforcement system of glass frit and nano-film layers, increase the welding strength, and improve the adhesion between the Frit packaging layer and the cover glass; at the same time, the uniform and dense film layer formed by the inorganic quantum dot nano-film layer It can act as a buffer layer and release stress when the cover glass is squeezed; quantum dots can also increase laser absorption, and a small laser can be used to weld the Frit packaging layer, reducing the thermal stress impact of the screen.

Description

A packaging structure and packaging method for improving the mechanical strength of Frit packaging

technical field

The invention relates to the field of display technology, in particular to a packaging structure and a packaging method for improving the mechanical strength of Frit packaging.

Background technique

Currently, there are two types of display screens, Frit (glass frit) package and film package. Frit packaging prints glass frit on the cover glass, and uses laser beam to move and heat the frit to melt to form an airtight package. The frit is melted on the glass substrate to form a sealing body. The disadvantage of this packaging method is that the adhesion between the glass frit and the surface of the cover plate is insufficient, and it cannot provide sufficient mechanical strength; at the same time, because the strength of the place where the two pieces of glass are in contact is not strong enough, it is easy to break when it is squeezed and impacted. question.

Chinese patent document CN 103102075 discloses a method and device for sealing with glass frit. The glass frit includes sealing glass and fillers. The filler includes inorganic quantum dot materials. First, the glass frit is dispersed in the carrier to obtain the glass glue ; Deposit glass glue on the packaging area of the first substrate; preheat the glass glue on the packaging area to obtain inorganic glass; press the second substrate and the first substrate; use laser to irradiate the packaging pattern area, so that the inorganic glass The encapsulation glass is formed after fusing to seal the area surrounded by the encapsulation area of the first substrate. The above-mentioned patent document is a method of doping inorganic quantum dot materials in glass frit for pre-mixing. During the packaging process, laser irradiation is performed on the mixed glass frit to melt it to achieve the purpose of packaging. The mass fraction of inorganic quantum dot materials in the glass frit It is only 0.1-10%. Although it can enhance the packaging and sealing ability of the packaging surface, when the glass cover is subjected to vertical mechanical extrusion, it is difficult to effectively release the extrusion stress, and it is easy to cause extrusion cracks.

Contents of the invention

Therefore, in order to solve the problem that the display body cannot effectively release the extrusion stress and impact stress on the glass when it is squeezed or impacted from the front, resulting in a fragile phenomenon, the present invention provides a method for improving the mechanical strength of the Frit package. Encapsulation structure and encapsulation method thereof.

The adopted technical scheme is as follows:

On the one hand, the present invention provides a packaging structure that improves the mechanical strength of Frit packaging, which sequentially includes a substrate, a metal film layer, a Frit packaging layer, and a cover glass, and the Frit packaging layer is located in the packaging area of the cover glass, so One side of the Frit encapsulation layer is also provided with an inorganic quantum dot nano film layer, and the inorganic quantum dot nano film layer is located between the Frit encapsulation layer and the described cover glass, or the inorganic quantum dot nano film layer It is located between the Frit packaging layer and the metal film layer.

On the other hand, the present invention also provides a kind of encapsulation method that improves Frit encapsulation mechanical strength, makes metal film layer on substrate; Prepare Frit encapsulation layer and inorganic quantum dot nano film layer in the encapsulation area of cover plate glass; Cover plate The sealing area of the glass and the substrate is docked; the sealing area of the cover glass and the substrate is irradiated by a light source, so that the cover glass and the substrate are welded and sealed.

Prepare the inorganic quantum dot nano film layer on the cover glass, then prepare the Frit encapsulation layer on the inorganic quantum dot nano film layer, connect the metal film layer on the substrate with the Frit encapsulation layer, and make the cover glass and the substrate by laser light irradiation A weld seal is achieved between them.

The prepared inorganic quantum dot nano film layer has a thickness of 100nm-1000nm.

Prepare the Frit encapsulation layer on the cover glass, then prepare the inorganic quantum dot nano-film layer on the Frit encapsulation layer, connect the metal film layer on the substrate with the inorganic quantum dot nano-film layer, and make the cover glass and the substrate by laser light irradiation A weld seal is achieved between them.

The prepared inorganic quantum dot nano film layer has a thickness of 500nm-2000nm.

The prepared Frit encapsulation layer has a thickness of 4-6 μm.

The method for preparing the inorganic quantum dot nano film layer includes one of a vapor phase deposition method, a 3D printing method, an inkjet printing method and a spin coating method.

The columnar fibers in the prepared inorganic quantum dot nano film layer are perpendicular to the cover glass.

The inorganic quantum dot nano film layer includes at least one of cadmium selenide, zinc sulfide, zinc selenide, cadmium oxide, cadmium telluride, and zinc oxide.

The technical solution of the present invention has the following advantages:

A. The present invention adopts the inorganic quantum dot nano film layer to enhance the package strength of Frit, the inorganic quantum dot nano film layer is placed between the cover glass and the substrate, the inorganic quantum dot nano film layer is similar to the columnar fiber, and plays a reinforced composite with the cover glass role. The fused Frit encapsulation layer can penetrate into the gap between the nano-film layers to form a composite reinforcement system between the Frit encapsulation layer and the nano-film layer to increase the welding strength. The uneven surface of the nanoparticles provides a large adsorption area, which improves the Frit encapsulation layer and the cover plate. At the same time, the uniform and dense film layer formed by the inorganic quantum dot nano film layer can act as a buffer layer and release stress when the cover glass is squeezed; quantum dots can also increase laser absorption, and can be used more The Frit packaging layer is welded by a small laser, which reduces the thermal stress impact of the screen.

B. The present invention will increase the inorganic quantum dot nano film layer between the cover glass and the substrate, enhance the adhesion and welding strength between the cover plate and the glass frit through the inorganic quantum dot nano film layer, and improve the sealing between the cover glass and the substrate The mechanical strength of the layer, the inorganic quantum dot nano-film layer can play the role of a buffer layer, and can increase laser absorption and reduce laser power.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the specific implementation or description of the prior art. Obviously, the accompanying drawings in the following description The drawings show some implementations of the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative work.

Fig. 1 is the structural representation of the first kind of embodiment provided by the present invention;

Fig. 2 is the structural representation of the second embodiment provided by the present invention;

Fig. 3 is the stress buffering schematic diagram of inorganic quantum dot nano-film layer when being squeezed by cover glass;

Fig. 4 is a diagram showing the distribution of the displacement of the cover glass moving downward when it is squeezed from the outside.

Explanation of reference signs:

1-cover glass; 2-Frit encapsulation layer; 3-inorganic quantum dot nano film layer; 4-metal film layer; 5-substrate.

detailed description

The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

A packaging structure for improving the mechanical strength of Frit packaging provided by the present invention, as shown in Figures 1 and 2, sequentially includes a substrate 5, a metal film layer 4, a Frit packaging layer 2 and a cover glass 1, and the Frit packaging layer 2 is located on the cover In the packaging area of the plate glass 1, one side of the Frit packaging layer 2 is also provided with an inorganic quantum dot nano film layer 3, and the inorganic quantum dot nano film layer 3 is located between the Frit packaging layer 2 and the cover glass 1, or the inorganic quantum dot nano film layer 3 is located between the Frit packaging layer 2 and the cover glass 1, or the inorganic quantum dot nano film layer The thin film layer 3 is located between the Frit packaging layer 2 and the metal film layer 4 .

1 shows the first structural form provided by the present invention, wherein the inorganic quantum dot nano film layer 3 is located between the Frit packaging layer 2 and the cover glass 1 .

2 shows the second structure provided by the present invention, wherein the inorganic quantum dot nano-film layer 3 is located between the Frit encapsulation layer 2 and the metal film layer 4 .

The substrate here is an OLED substrate, which can provide the chip with electrical connection, protection, support, heat dissipation, assembly and other functions to achieve multi-pin, reduce the size of packaged products, improve electrical performance and heat dissipation, ultra-high density or multi-chip modules purpose.

The above two packaging structures will be described in detail below.

Example 1

As shown in Figure 1, make metal film layer 4 on substrate 5, prepare inorganic quantum dot nano film layer 3 on cover glass 1, then prepare Frit encapsulation layer 2 on inorganic quantum dot nano film layer 3, substrate 5 The metal film layer 4 on the cover glass 1 is docked with the Frit encapsulation layer 2 on the cover glass 1 , and the cover glass 1 and the substrate 5 are fused and sealed by irradiation with a light source. Preferably, the encapsulation area of the cover glass 1 and the substrate 5 is sealed by laser welding.

Wherein the thickness of the prepared inorganic quantum dot nano film layer 3 is 100nm～1000nm, the thickness of the prepared Frit encapsulation layer 2 is 4～6 μ m; the preferred inorganic quantum dot nano film layer 3 thickness is 800nm, the preferred Frit encapsulation layer 2 The thickness is 5 μm.

The method for preparing the inorganic quantum dot nano film layer includes one of a vapor phase deposition method, a 3D printing method, an inkjet printing method and a spin coating method.

In the present invention, when the inorganic quantum dot nano film layer 3 is prepared, the columnar fibers are arranged perpendicular to the cover glass 1 .

The inorganic quantum dot nano film layer 3 includes at least one of cadmium selenide, zinc sulfide, zinc selenide, cadmium oxide, cadmium telluride, and zinc oxide.

In the present invention, the inorganic quantum dot nano film layer 3 is a nanorod structure to enhance the encapsulation strength of the Frit. The inorganic quantum dot nano film layer 3 is similar to a columnar fiber, and plays the role of strengthening composite with the Frit encapsulation layer 2 . The molten Frit encapsulation layer 2 can penetrate into the gap between the nano-film layers to form a composite reinforcement system of the Frit encapsulation layer 2 and the inorganic quantum dot nano-film layer 3, which increases the welding strength; since the uneven surface of the nanoparticles provides a large adsorption area , improve the adhesion between the Frit encapsulation layer 2 and the cover glass 1; at the same time, the uniform and dense film layer formed by the inorganic quantum dot nano film layer 3 can act as a buffer layer and release stress when the glass is squeezed; Points can also increase laser absorption, and a smaller laser can be used to weld the Frit packaging layer 2, which reduces the thermal stress impact of the screen.

Example 2

As shown in Figure 2, the difference from Example 1 is: on the substrate 5, a metal film layer 4 is made, on the cover glass 1, the Frit encapsulation layer 2 is first prepared, and then the inorganic quantum dot nano film is prepared on the Frit encapsulation layer 2 Layer 3, and then the metal film layer 4 on the substrate 5 is docked with the inorganic quantum dot nano-film layer 3 on the cover glass 1, and the cover glass 1 and the substrate 5 are fused and sealed by light source irradiation, and the obtained 2 shows the structure. Preferably, the encapsulation area of the cover glass 1 and the substrate 5 is sealed by laser welding.

The thickness of the prepared inorganic quantum dot nano film layer 3 is 500nm～2000nm, the thickness of the prepared Frit encapsulation layer 2 is 4～6 μ m, the preferred inorganic quantum dot nano film layer 3 thickness is 1000nm, the preferred Frit encapsulation layer 2 The thickness is 5 μm.

In the above two embodiments, the inorganic quantum dot nano-film layer 3 is added between the glass cover plate 1 and the substrate 5, and the adhesion and welding strength between the cover glass 1 and the Frit packaging layer 2 are enhanced through the inorganic quantum dot nano-film layer 3, To improve the mechanical strength of the sealing layer between the cover glass 1 and the substrate 5, the inorganic quantum dot nano film layer 3 can function as a buffer layer, and can increase laser absorption and reduce laser power.

Fig. 3 shows the schematic diagram of stress buffering when the inorganic quantum dot nano film layer is squeezed by the glass cover plate. It can be seen from the figure that the inorganic quantum dot nano-film layer located between the cover glass and the substrate forms a uniform and dense film layer, which acts as a buffer layer and releases stress when the cover glass is squeezed.

Fig. 4 shows the distribution of the displacement of the cover glass moving downward when it is squeezed by the outside. It can be seen that in the first stage (between 0 and 0.1), the displacement of the cover glass remains very small, close to 0, which means that the inorganic quantum dot nano film layer buffers and releases the extrusion stress of the cover glass; the second In the second stage (>0.1), the displacement of the cover glass increases sharply, indicating that the stress has exceeded the release limit of the inorganic quantum dot nano-film layer, the quantum dots have been pressed into the glass, and the glass has broken.

If there is no inorganic quantum dot nano-film layer, there is nowhere to release the extrusion stress, which is equivalent to the second stage in Figure 4. The glass is in direct contact and is easy to break.

Apparently, the above-mentioned embodiments are only examples for clear description, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. And the obvious changes or changes derived therefrom are still within the scope of protection of the present invention.

Claims (10)

1. improve an encapsulating structure for Frit packaging machinery intensity, include substrate, metallic diaphragm, Frit encapsulated layer and lid successively Glass sheet, described Frit encapsulated layer is positioned at the packaging area of described cover-plate glass, it is characterised in that the one of described Frit encapsulated layer Side is additionally provided with inorganic-quantum-dot nano thin-film layer, and described inorganic-quantum-dot nano thin-film layer is positioned at described Frit encapsulated layer with described Cover-plate glass between, or described inorganic-quantum-dot nano thin-film layer is between described Frit encapsulated layer and metallic diaphragm.

2. the method for packing improving Frit packaging machinery intensity, it is characterised in that make metallic diaphragm on substrate；At lid The packaging area of glass sheet prepares Frit encapsulated layer and inorganic-quantum-dot nano thin-film layer；Encapsulation region by cover-plate glass Yu substrate Territory is docked；Irradiated the packaging area of cover-plate glass and substrate by light source, make frit seal between cover-plate glass and substrate.

Method for packing the most according to claim 2, it is characterised in that prepare inorganic-quantum-dot nanometer thin on cover-plate glass Film layer, then prepares Frit encapsulated layer on inorganic-quantum-dot nano thin-film layer, is encapsulated with Frit by the metallic diaphragm on substrate Layer docking, is irradiated by LASER Light Source and makes to reach between cover-plate glass and substrate frit seal.

Method for packing the most according to claim 3, it is characterised in that the thickness of prepared inorganic-quantum-dot nano thin-film layer Degree is 100nm～1000nm.

Method for packing the most according to claim 2, it is characterised in that prepare Frit encapsulated layer on cover-plate glass, then Frit encapsulated layer is prepared inorganic-quantum-dot nano thin-film layer, by the metallic diaphragm on substrate and inorganic-quantum-dot nano thin-film Layer docking, is irradiated by LASER Light Source and makes to reach between cover-plate glass and substrate frit seal.

Method for packing the most according to claim 5, it is characterised in that the thickness of prepared inorganic-quantum-dot nano thin-film layer Degree is 500nm～2000nm.

Method for packing the most according to claim 2, it is characterised in that the thickness of prepared Frit encapsulated layer is 4～6 μ m。

Method for packing the most according to claim 7, it is characterised in that described inorganic-quantum-dot nano thin-film layer of preparing Method includes the one in vapour deposition process, 3D impact system, ink-jet printing process and spin-coating method.

Method for packing the most according to claim 8, it is characterised in that in prepared inorganic-quantum-dot nano thin-film layer Columnar fiber is perpendicular to cover-plate glass.

Method for packing the most according to claim 9, it is characterised in that described inorganic-quantum-dot nano thin-film layer includes At least one in cadmium selenide, zinc sulfide, zinc selenide, Aska-Rid., cadmium telluride, zinc oxide.