CN106169875B - Semiconductor power conversion device - Google Patents

Abstract

The present invention provides a kind of semiconductor power conversion device, which uses the small-sized and stable structure for effectively cooling down transformer and semiconductor unit, and capacitance and voltage is made to become much larger.The semiconductor power conversion device (1) is formed with first path and the second path, in the first path, cooling air is flowed and is cooled down in semiconductor unit (7), pass through cooling fins opening portion (9a) and electrolytic capacitor opening portion (9b) and inflow transformer receiving room (12), it is discharged by exhaust fan (4) after being cooled down on the outside of to transformer (8), in second path, cooling air flows into wind-tunnel (15) with opening portion (9c) from transformation armature winding by face side opening portion (10c), it is discharged by exhaust fan (4) after being cooled down on the inside of to transformer (8).

Description

Semiconductor power conversion device

technical field

The present invention relates to a semiconductor power conversion device in which a transformer and a semiconductor unit are housed in a case.

Background technique

The prior art of a semiconductor power conversion device having a cooling function is disclosed, for example, in Patent Document 1 (Japanese Patent Laid-Open No. 2007-74865). This prior art will be described with reference to the drawings. FIG. 6 is a semiconductor power conversion device based on the description in Patent Document 1, FIG. 6( a ) is an internal structural diagram viewed from the left side, and FIG. 6( b ) is an internal structural diagram viewed from the front. The power conversion device 100 includes a case 101 , a transformer 102 , a semiconductor unit 103 , a control/output board 104 , and an exhaust fan 105 .

As shown in FIG. 6( b ), the control/output panel 104 is arranged on the right side inside the casing 101 when viewed from the front. As shown in Figure 6(a) and (b), the partition plate 101a laid in the middle section on the left side of the housing 101 divides the remaining internal space up and down to form a lower space 101b and an upper space 101c. The transformer 102 is disposed in the lower space 101b. When viewed from the front in FIG. 6( b ), semiconductor cells 103 in two rows and three stages are arranged in the upper space 101c.

An air guide port 101d is formed on the back side of the partition plate 101a. In addition, the lower wind tunnel 101e, which is a space on the back side of the transformer 102 as part of the lower space 101b, and the upper wind tunnel 101f, which is a space on the back side of the semiconductor unit 103 that is a part of the upper space 101c, pass through the air guide port 101d. And connected. A door (not shown) is formed on the front surface of the casing 101 , and an air inlet (not shown) is formed in the door.

Regarding the cooling of the transformer 102, cooling air is taken from an air inlet in front of the door portion not shown, and the cooling air flows in the direction of the arrow shown by the dashed-dotted line in FIG. 6(a). The cooling space flows along the surface of the transformer 102, cools the transformer 102, and flows to the lower wind tunnel 101e. Warm air in the lower wind tunnel 101e flows into the upper wind tunnel 101f through the air guide port 101d.

Regarding the cooling of the semiconductor unit 103 , cooling air is taken from an air intake in front of the unillustrated door portion, and the cooling air flows along arrows shown by dotted lines in FIG. 6( a ). The cooling air cools the inside of the semiconductor unit 103 through the cooling fin portion 103a arranged at the lower portion of the semiconductor unit 103, and flows into the upper wind tunnel 101f. Warm air in the upper wind tunnel 101f is exhausted by the exhaust fan 105 to discharge heat.

prior art literature

patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2007-74865 (paragraph numbers [0006] to [0009], FIG. 1, FIG. 2)

Contents of the invention

The technical problem to be solved by the invention

When the voltage and capacitance of the semiconductor power conversion device of this prior art are increased, it has been found that the following problems (1) to (3) newly arise.

(1) Upsizing of semiconductor power conversion devices

When the voltage and capacitance of the semiconductor power conversion device 100 are increased, the transformer 102 and the semiconductor unit 103 are also increased. Since the transformer 102 and the semiconductor unit 103 are arranged up and down in the semiconductor power conversion device 100 , it is expected that the height of the case 101 will increase, making it impossible to install the semiconductor power conversion device 100 mechanically and stably. In addition, a problem that it cannot be installed in a machine room or the like due to an increase in the height dimension is expected to occur. However, no attention has been paid to the subject of aiming at a small structure such that a semiconductor power conversion device can be installed stably even if the voltage and capacity of the semiconductor power conversion device are increased.

(2) Larger exhaust fan

When the voltage and capacity of the semiconductor power conversion device 100 are increased, it is necessary to increase the capacity of the exhaust fan 105 in order to improve the cooling function. However, in this case, since the shape of the exhaust fan 105 becomes large, another problem that it cannot be stably installed on the casing 101 is expected to occur. No attention has been paid to the problem of aiming at a small structure such that a semiconductor power conversion device can be installed stably even if the capacity of the exhaust fan is increased.

(3) Difficulty of heat removal

In the semiconductor power conversion device 100 , the cross-sectional area of the ventilation path of the air guide port 101 d for heat dissipation is small due to space constraints, and the ability to positively cool the transformer 102 is low. If the loss increases due to the enlargement of the transformer 102, the temperature in the lower wind tunnel 101e and the upper wind tunnel 101f in particular becomes high, making it difficult to efficiently cool them. If cooling can be performed efficiently, the capacity of the exhaust fan can be reduced. However, no attention has been paid to the subject of a structure capable of effectively cooling the transformer and the semiconductor unit and suppressing temperature rise even if the voltage and capacity of the semiconductor power conversion device are increased.

Therefore, the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a semiconductor power conversion device that adopts a small and stable structure that effectively cools the transformer and the semiconductor unit, and makes the capacitance and voltage higher. big.

Technical solutions for problem solving

The present invention that solves the above problems is characterized in that it includes:

a casing having an inner space for accommodating the transformer and the semiconductor unit;

a partition part that partitions the front and rear of the internal space, and forms a semiconductor unit storage room that stores the semiconductor unit on the front side and a transformer storage room that stores the transformer on the back side;

a partition part, the partition part is disposed on the lower side of the transformer storage chamber, and forms a wind tunnel that accommodates a part of the lower side of the transformer and communicates with the inside of the transformer;

an opening formed on the front side of the partition wall;

an upper opening formed in the partition to communicate the semiconductor unit storage room with the transformer storage room;

a lower opening formed in the partition so as to face the front opening of the partition wall so as to communicate the semiconductor unit storage room with the wind tunnel; and

an exhaust fan, the exhaust fan is arranged on the upper side of the casing, and exhausts air from the upper side of the transformer storage room,

The cooling air entering the semiconductor unit storage chamber is divided into a first path and a second path,

In the first path, the cooling air flows through the flow path formed inside the semiconductor unit for cooling, passes through the upper opening, flows from the semiconductor unit storage room into the transformer storage room, and After cooling the outside of the transformer, it is discharged from the transformer storage room by the exhaust fan,

In the second path, the cooling air flows into the wind tunnel through the semiconductor unit storage chamber, the lower opening, and the front opening, cools the inside of the transformer, and then flows into the wind tunnel. In the transformer storage room, the air is exhausted from the transformer storage room by the exhaust fan.

In the first path of the semiconductor power conversion device according to the present invention, the cooling air discharged from the semiconductor unit is discharged through the upper opening while increasing the flow velocity, and the cooling air is sprayed to the portion of the semiconductor unit. rear of the outside of the transformer for cooling.

In the first path of the power conversion device according to the present invention, a plate-shaped shielding portion is provided at a portion behind the semiconductor unit where the transformer does not exist so as to be spaced from the upper opening by a certain distance, The flow velocity of the cooling air ejected from the upper opening is made uniform, and the cooling air flows concentratedly so that the cooling air flows along the shield and contacts the outside of the transformer.

Invention effect

According to the present invention, it is possible to provide a semiconductor power conversion device that adopts a small and stable structure that effectively cools a transformer and a semiconductor unit, and makes capacitance and voltage larger.

Description of drawings

FIG. 1 is a front view of a semiconductor power conversion device according to an embodiment of the present invention.

Fig. 2 is a front view of the internal structure of the semiconductor power conversion device according to the embodiment of the present invention with the exhaust fan, door and control section removed.

Fig. 3 is a plan view of the internal structure of the semiconductor power conversion device according to the embodiment of the present invention with the top plate and the exhaust fan removed.

FIG. 4 is a front view of the internal structure of the semiconductor power conversion device according to the embodiment of the present invention with an exhaust fan, a door, a semiconductor unit, and a control section removed.

FIG. 5 is an internal structural diagram viewed from the left side of the semiconductor power conversion device in an embodiment of the present invention with side walls removed.

Fig. 6 is a semiconductor power conversion device in the prior art, Fig. 6(a) is an internal structural diagram viewed from the left side, and Fig. 6(b) is an internal structural diagram viewed from the front.

Detailed ways

Next, a semiconductor power conversion device according to an embodiment for implementing the present invention will be described with reference to the drawings. First, the structure included in the semiconductor power conversion device 1 of the present embodiment will be described. The appearance of this power conversion device 1 is as shown in FIG. 1 , and includes a casing 2 , a control unit 3 , an exhaust fan 4 , a door 5 , and an air inlet 6 .

Two doors 5 are configured to be openable and closable on the front of the casing 2 which is a solid rectangular parallelepiped structure. In front of these doors 5, an intake port 6 opening in a grill shape is formed. An exhaust fan 4 for exhausting air from inside the semiconductor power conversion device 1 is disposed on the upper side of the casing 2 . If the exhaust fan 4 works, the external air as cooling air is sucked in the semiconductor power conversion device 1 through the air inlet 6, and passes through the first and second paths in the semiconductor power conversion device 1 described later from the exhaust fan. 4 is discharged.

Its interior, as shown in Figure 2, Figure 3, and Figure 5, includes a semiconductor unit 7, as shown in Figure 3 and Figure 5, includes a transformer 8, a partition 10, a semiconductor unit storage room 11, and a transformer storage room 12, as shown in Figure 3 and Figure 5 4. As shown in FIG. 5, it includes a partition part 9, and as shown in FIG. 5, it includes a shielding part 13, a base part 14, and a wind tunnel 15.

As shown in FIG. 1 , the control unit 3 of the semiconductor power conversion device 1 is disposed inside the casing 2 on the right side when viewed from the front. The control unit 3 is constituted by a plurality of control devices. As shown in FIG. 3 , FIG. 4 , and FIG. 5 , the partition part 9 is laid so as to partition the front and rear of the remaining internal space, thereby forming the semiconductor unit storage room 11 and the transformer storage room 12 . As shown in Fig. 2, Fig. 3, and Fig. 5, in the internal structure of the semiconductor power conversion device 1, semiconductor units 7 in five rows and three sections (especially referring to Fig. 2 ) are arranged in the semiconductor unit storage chamber 11 when viewed from the front. , the transformer 8 is disposed in the transformer storage room 12 .

As shown in FIG. 2, the semiconductor unit 7 includes a cooling fin 7a and an electrolytic capacitor 7b. The semiconductor unit 7 is, for example, a power conversion circuit including a semiconductor switching element such as an IGBT (Insulated Gate Bipolar Transistor), an electrolytic capacitor 7b, and other electronic components that generate a large amount of heat. Unitized. The cooling fins 7a and the electrolytic capacitors 7b are arranged in a flow path (see FIG. 5 ), and cooling air passes through these flow paths. The above-mentioned semiconductor unit 7 has three layers and accommodates three phases of U, V, and W.

The partition part 9 is formed with the opening part 9a for cooling fins, and the opening part 9b for electrolytic capacitors as shown in FIG. The opening 9 a for cooling fins and the opening 9 b for electrolytic capacitors are upper openings in the present invention. Openings 9 a for cooling fins and openings 9 b for electrolytic capacitors are formed in the same number (15 in this embodiment) as the number of semiconductor units 7 . The cooling fin openings 9 a and the electrolytic capacitor openings 9 b communicate the semiconductor unit storage chamber 11 and the transformer storage chamber 12 to allow cooling air to flow. The cooling air entering from the front air inlet 6 flows inside the semiconductor unit 7 of the semiconductor unit storage room 11 , passes through the cooling fin openings 9 a and the electrolytic capacitor openings 9 b , and flows into the transformer storage room 12 .

This partition part 9 is also formed with the opening part 9c for transformer primary windings as shown in FIG. The opening 9c for the transformer primary winding is a lower opening in the present invention. As will be described later, it is formed to face the front opening 10 c of the partition wall 10 .

As shown in FIG. 5 , in the transformer storage room 12 , the transformer 8 is installed on the back side of the partition 9 . The lower side of the transformer 8 is supported by the base portion 14 . The transformer 8 is, for example, a three-phase transformer, and a part of the core 8a is located on the upper side and the lower side. The transformer 8 is also a heating unit. Since the transformer 8 is a heavy object, it is arranged in the lower part, and since it requires relatively no maintenance, it is arranged in the transformer storage room 12 on the rear side.

The partition wall 10 has an upper plate 10a, a vertical plate 10b, and a front opening 10c, and is partitioned by the partition wall 10 to form a wind tunnel 15 which is a space below the transformer. The front vertical plate 10 b of the partition wall 10 faces (or contacts) the partition 9 , and the rear end of the upper plate 10 a contacts the rear inner wall of the case 2 . Partition plates (not shown) are also formed at both left and right ends of the partition wall 10 to divide the wind tunnel 15 .

The core 8a of the transformer 8 is located in this wind tunnel 15 . The upper plate 10a of the partition wall 10 is a partition plate attached in the plane direction directly below the winding, and a hole is opened in the upper plate 10a. This hole is, for example, a hole through which the iron core 8 a passes, and also a hole through which cooling air reaches the primary winding inside the transformer 8 . The winding has three windings U, V, and W, and holes are formed to allow cooling air to reach them respectively. The air taken in from the transformer primary winding opening 9c flows into the wind tunnel 15 through the front opening 10c to cool the lower iron core 8a, passes through the hole from the wind tunnel 15, and passes through the inside of the primary winding of the transformer 8 to the upper side. The iron core 8a on the side is cooled, and finally flows into the transformer storage chamber 12 .

Next, the flow of cooling air will be described. The flow of the cooling air entering the semiconductor unit storage chamber 11 has two paths, namely, a first path indicated by the dashed-dot arrows in FIG. 5 and a second path indicated by the broken-line arrows in FIG. 5 .

The first path is a path flowing on the upper side via the semiconductor unit 7 . The cooling air taken in from the air inlet 6 of the front door 5 flows through the flow path of the semiconductor unit 7 on which the cooling fin portion 7a and the electrolytic capacitor portion 7b are arranged as indicated by the arrow of the single-dot chain line, and flows to the semiconductor unit 7. 7 for cooling. Then, the cooling air flows into the transformer housing chamber 12 through the cooling fin opening 9 a and the electrolytic capacitor opening 9 b of the partition 9 . This inflowing cooling air cools the front side of the secondary winding of the transformer 8 . And, it is wound to the back side of the transformer 8, and the back side of the secondary winding is also cooled. The cooling air cools the entire surface of the secondary winding, flows above the transformer housing chamber 12 , and is exhausted to the outside of the casing 2 by the exhaust fan 4 to discharge heat.

Here, the cooling air discharged from the semiconductor unit 7 passes through the cooling fin opening 9 a and the electrolytic capacitor opening 9 b of the partition 9 . These openings are holes with a small cross-sectional area of the ventilation path, through which the flow rate of the cooling air is increased, and the cooling air is sprayed directly onto the surface of the secondary winding of the transformer 8 . These faster cooling air can effectively capture heat and improve cooling efficiency.

In addition, in this form, the shielding part 13 is provided. When the height of the transformer 8 is lower than that of the housing 2, if there is no shielding part 13, the cooling air discharged from the semiconductor unit 7 of the upper stage will be directly discharged by the exhaust fan 4 without affecting the secondary side of the transformer 8. The winding is cooled. In order to cool the transformer 8 effectively, it is desirable to spray the cooling air discharged from the semiconductor unit 7 to the transformer 8 as much as possible. Therefore, the plate-shaped shield portion 13 is provided to change the direction in which the cooling air flows so that it flows toward the transformer 8 . Thereby, since all the cooling air which passes through the opening part 9a for cooling fins and the opening part 9b for electrolytic capacitors cools the transformer 8, cooling efficiency improves.

If it is assumed that there is no shielding portion 13 on the rear side of the semiconductor unit 7 of the upper stage, then compared with the middle stage and the lower stage, the wind speed of the cooling air passing through the openings 9a for cooling fins and the openings 9b for electrolytic capacitors in the upper stage increases, and there is a large amount of wind speed. Cooling air flows through the upper section, possibly causing poor cooling balance. In the present invention, the rear side of the semiconductor unit 7 of the upper stage is provided with a plate-shaped shielding portion 13 that makes it difficult for cooling air to flow through, so that it can pass through all the cooling fin openings 9a and electrolytic capacitors in the upper, middle, and lower stages. The wind speed of the cooling air in the opening 9b is equal, so that the cooling balance does not shift.

The second path is a path that flows on the lower side without passing through the semiconductor unit 7 . The cooling air entering from the air inlet 6 passes through the transformer primary winding opening 9c and the front opening 10c, and flows into the wind tunnel 15 at the lower part of the transformer. Cooling the lower iron core 8a, the cooling air passes through the inside of the primary winding of the transformer 8 to cool it, cools the upper iron core 8a, flows into the transformer storage room 12, and is exhausted to the casing by the exhaust fan 4 The outside of the body 2, thereby carrying out heat dissipation. Since the cooling air does not pass through the semiconductor unit 7 , it is not warm cooling air and can effectively cool the primary winding inside the transformer 8 .

The semiconductor power conversion device 1 of the present invention has been described above. According to this semiconductor power conversion device 1 , the semiconductor unit 7 and the transformer 8 can be accommodated in the same casing 2 so as to be aligned in the front-rear direction. As a result, it becomes a device with a low height, and realizes miniaturization. Even if the exhaust fan 4, the semiconductor unit 7, and the transformer 8 become larger, the risk of collapse due to instability can be reduced, and the realization of stabilization.

According to this semiconductor power conversion device 1, the semiconductor unit 7 is cooled with cold cooling air in the first path, and the transformer 8 is cooled with cold cooling air in the second path, so that the cooling effect of the semiconductor unit 7 and the transformer 8 It is improved, and the increase in capacitance of the semiconductor power conversion device 1 or the overload tolerance can be improved.

The cooling air for the transformer 8 is divided into a first path for cooling the outside of the transformer 8 (secondary winding) and a second path for cooling the inside of the transformer 8 (primary winding). In the first path, although the cooling air is warmed by passing through the semiconductor unit 7, since it passes through the openings 9a for cooling fins and openings 9b for electrolytic capacitors, which have a narrow cross-sectional area of the ventilation path, the flow velocity becomes faster. The cooling air with a faster flow velocity is sprayed to the secondary winding of the transformer 8, thereby improving the cooling efficiency of the secondary winding. In the second path, the cold cooling air effectively dissipates heat to the inner side of the transformer 8 where the temperature is particularly likely to rise, thereby improving the cooling effect of the primary winding.

In addition, the exhaust fan 4 and the air inlet 6 for cooling the semiconductor unit 7 and the transformer 8 share a structure, which can efficiently introduce cooling air with a small number of components, and also contributes to miniaturization.

Industrial Applicability

The semiconductor power conversion device of the present invention is a device using a transformer and a semiconductor unit. For example, it can be applied to devices such as a rectifier that converts alternating current into direct current, an inverter that converts direct current into alternating current with a desired voltage and frequency, and can be used. It is expected to be widely used.

Label description

1: Semiconductor power conversion device

2: Shell

3: Control Department

4: exhaust fan

5: door

6: air inlet

7: Semiconductor unit

7a: Cooling fins

7b: Electrolytic capacitor

8: Transformer

8a: iron core

9: Partition

9a: Openings for cooling fins

9b: Opening for electrolytic capacitor

9c: Opening for transformer primary winding

10: next door

10a: Upper plate

10b: Front plate

10c: Front side opening

11: Semiconductor unit storage room

12: Transformer storage room

13: shielding part

14: base part

15: Wind Tunnel

Claims (3)

1. A semiconductor power conversion device, characterized in that, comprising: a casing having an inner space for accommodating the transformer and the semiconductor unit; a partition part that partitions the front and rear of the internal space to form a semiconductor unit storage room that stores the semiconductor unit on the front side and a transformer storage room that stores the transformer on the back side; a partition part, the partition part is disposed on the lower side of the transformer storage chamber, and forms a wind tunnel that accommodates a part of the lower side of the transformer and communicates with the inside of the transformer; an opening formed on the front side of the partition wall; an upper opening formed in the partition to communicate the semiconductor unit storage room with the transformer storage room; a lower opening formed in the partition so as to face the front opening of the partition wall so as to communicate the semiconductor unit storage room with the wind tunnel; and an exhaust fan, the exhaust fan is arranged on the upper side of the casing, and exhausts air from the upper side of the transformer storage room, The cooling air entering the semiconductor unit storage chamber is divided into a first path and a second path, In the first path, the cooling air is cooled by flowing through a flow path formed inside the semiconductor unit, passes through the upper opening, flows from the semiconductor unit storage room into the transformer storage room, and After the outside of the transformer is cooled, the cooling air is exhausted from the transformer storage room by the exhaust fan, In the second path, the cooling air flows into the wind tunnel through the semiconductor unit storage chamber, the lower opening, and the front opening, cools the inside of the transformer, and then flows into the wind tunnel. In the transformer storage room, the air is exhausted from the transformer storage room by the exhaust fan. 2. The semiconductor power conversion device according to claim 1, wherein: In the first path, the cooling air discharged from the semiconductor unit is discharged from the upper opening while increasing its flow velocity, and the cooling air is sprayed so as to contact the semiconductor unit located behind the semiconductor unit. outside of the transformer, thereby cooling. 3. The semiconductor power conversion device according to claim 2, wherein: In the first path, a plate-shaped shielding portion is provided at a portion behind the semiconductor unit where the transformer does not exist at a certain distance from the upper opening, so that The flow velocity of the cooling air ejected from the opening is uniform, and the cooling air flows concentratedly so that the cooling air flows along the shielding portion and contacts the outside of the transformer.