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CN106129229A - A kind of LED packaging based on quantum dot granule and preparation method thereof - Google Patents

A kind of LED packaging based on quantum dot granule and preparation method thereof Download PDF

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Publication number
CN106129229A
CN106129229A CN201610715494.0A CN201610715494A CN106129229A CN 106129229 A CN106129229 A CN 106129229A CN 201610715494 A CN201610715494 A CN 201610715494A CN 106129229 A CN106129229 A CN 106129229A
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quantum dot
led
glue
layer
transparent
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周志荣
李春峰
李盛鑫
洪建明
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TIANJIN ZHONGHUAN ELECTRONIC LIGHTING TECHNOLOGY Co Ltd
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TIANJIN ZHONGHUAN ELECTRONIC LIGHTING TECHNOLOGY Co Ltd
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Priority to CN201610715494.0A priority Critical patent/CN106129229A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations

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  • Luminescent Compositions (AREA)

Abstract

本发明公开了一种基于量子点颗粒的LED封装器件及其制备方法,器件包括载体和设于载体上的LED蓝光芯片,LED芯片上依次覆有荧光粉胶层、透明胶层和量子点胶层,量子点胶层是具有阻水阻氧性能的量子点颗粒和透明凝胶材料混合后涂覆得到,其中,量子点颗粒包括量子点、介孔材料和阻水阻氧材料,量子点分布在介孔材料中,在量子点和介孔材料之间的间隙填充有阻水阻氧材料;在量子点和介孔材料之间的间隙填充阻水阻氧材料,将量子点颗粒分散于透明凝胶材料后直接涂覆,采用芯片直接接触式封装,提高了LED的光效;本发明中LED封装器件可以完全地表现饱和广色域颜色,并能在高色温底下达到高显色指数与高R9和高R11值,不仅色彩鲜艳,亮度和能效大幅度提高。

The invention discloses an LED packaging device based on quantum dot particles and a preparation method thereof. The device includes a carrier and an LED blue light chip arranged on the carrier, and the LED chip is sequentially covered with a fluorescent powder glue layer, a transparent glue layer and quantum dot glue The quantum dot glue layer is obtained by mixing quantum dot particles with water and oxygen barrier properties and a transparent gel material and coating them. The quantum dot particles include quantum dots, mesoporous materials and water and oxygen barrier materials. The distribution of quantum dots is In the mesoporous material, the gap between the quantum dots and the mesoporous material is filled with a water and oxygen barrier material; the gap between the quantum dots and the mesoporous material is filled with a water and oxygen barrier material, and the quantum dot particles are dispersed in the transparent After the gel material is directly coated, the chip is directly contacted and packaged, which improves the light efficiency of the LED; the LED package device in the present invention can completely express saturated wide color gamut colors, and can achieve high color rendering index and high color rendering under high color temperature. High R9 and high R11 values, not only bright colors, but also greatly improved brightness and energy efficiency.

Description

一种基于量子点颗粒的LED封装器件及其制备方法A kind of LED packaging device based on quantum dot particles and its preparation method

技术领域technical field

本发明涉及照明领域,尤其涉及一种基于量子点颗粒的LED封装器件及其制备方法。The invention relates to the field of lighting, in particular to an LED packaging device based on quantum dot particles and a preparation method thereof.

背景技术Background technique

目前大家所熟知的LED电视,都是使用蓝光芯片加上黄色荧光粉产生白光的发光模式。LED电视就是利用白光通过彩色滤光器红、绿、蓝光来生成图像,透过这样的背光源让人眼感受到白光。但问题在白光LED色彩范围有限,并不足以产生足够的饱和颜色,且单色光的精准度也不算高,产生的结果就是LED电视的色域范围不高,色彩鲜艳度不够鲜明。At present, the well-known LED TVs all use blue light chips and yellow phosphors to produce white light. LED TV is to use white light to generate images through red, green, and blue light through color filters. Through such a backlight, people can feel white light. But the problem is that the color range of white light LED is limited, which is not enough to produce sufficient saturated colors, and the accuracy of monochromatic light is not high. The result is that the color gamut of LED TV is not high, and the color brightness is not bright enough.

背光一直是LCD屏幕不可或缺的一环,好的背光源一定需要有好频谱表现,基本就决定了一片LCD面板的好坏。一般使用白光LED的液晶电视背光通,是通过滤光片所显示的红色、绿色不仅亮度低而且不够纯净。这就导致了液晶电视的色域,受到背光的极大限制。虽然精准的调光技术,能够一定幅度上提升电视的色域范围,但是提升的空间有限,NTSC色域值能够达到72%左右,一般最多也就能够提升5~10%左右。The backlight has always been an indispensable part of the LCD screen. A good backlight must have a good spectrum performance, which basically determines the quality of an LCD panel. Generally, the backlight of LCD TVs using white LEDs is passed through. The red and green colors displayed through the filter are not only low in brightness but also not pure enough. This leads to the color gamut of LCD TVs, which is greatly limited by the backlight. Although precise dimming technology can increase the color gamut of TVs to a certain extent, the room for improvement is limited. The NTSC color gamut value can reach about 72%, and generally it can be increased by about 5-10% at most.

从近几年的研究发现,与太阳光比较,现在的白光LED灯是有缺陷的,这种人造白光有很多的高能光子(即蓝光过多)现象。已经有一些医学证据表明蓝光过多对人类健康的影响是不利的。Research in recent years has found that compared with sunlight, the current white LED lights are defective. This artificial white light has a lot of high-energy photons (that is, too much blue light). There has been some medical evidence that too much blue light has adverse effects on human health.

低色温、大功率白光LED仍是商品化GaN基白光LED发展的总体趋势。为适应这种趋势,就要加快红光荧光粉的研发进程,这对提升白光LED的显色指数具有重要意义。然而,令人遗憾的是,到目前为止,所有红色荧光粉的性能与蓝、绿色荧光粉相比在光通量性能维持方面还相差甚远,这是白光LED发展的最大瓶颈所在。Low color temperature, high power white LED is still the general trend of commercial GaN-based white LED development. In order to adapt to this trend, it is necessary to speed up the research and development process of red phosphors, which is of great significance for improving the color rendering index of white LEDs. However, it is regrettable that so far, the performance of all red phosphors is far from that of blue and green phosphors in terms of luminous flux performance maintenance, which is the biggest bottleneck in the development of white LEDs.

发明内容Contents of the invention

本发明所要解决的技术问题是提供一种基于量子点颗粒的LED封装器件及其制备方法。The technical problem to be solved by the present invention is to provide an LED packaging device based on quantum dot particles and a preparation method thereof.

本发明所采取的技术方案是:The technical scheme that the present invention takes is:

一种基于量子点颗粒的LED封装器件,包括载体和设于载体上的LED蓝光芯片,所述LED蓝光芯片上依次覆有荧光粉胶层、透明胶层和量子点胶层,所述量子点胶层是具有阻水阻氧性能的量子点颗粒和透明凝胶材料混合后涂覆得到,其中,所述量子点颗粒包括量子点、介孔材料和阻水阻氧材料,所述量子点分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。An LED packaging device based on quantum dot particles, including a carrier and an LED blue light chip arranged on the carrier, the LED blue light chip is covered with a fluorescent powder glue layer, a transparent glue layer and a quantum dot glue layer in sequence, and the quantum dots The adhesive layer is obtained by mixing quantum dot particles with water and oxygen blocking properties and a transparent gel material, wherein the quantum dot particles include quantum dots, mesoporous materials and water and oxygen blocking materials, and the distribution of quantum dots is In the mesoporous material, the gap between the quantum dots and the mesoporous material is filled with the water and oxygen blocking material.

在一些优选的实施方式中,所述量子点胶层上还覆有透明胶层。In some preferred embodiments, the quantum dot glue layer is also covered with a transparent glue layer.

在一些优选的实施方式中,所述透明胶层为硅胶层或环氧树脂层。In some preferred embodiments, the transparent adhesive layer is a silicone layer or an epoxy resin layer.

在一些优选的实施方式中,所述透明凝胶材料为硅胶或环氧树脂。In some preferred embodiments, the transparent gel material is silica gel or epoxy resin.

在一些优选的实施方式中,所述量子点胶层的厚度为0.01-1mm。In some preferred embodiments, the thickness of the quantum dot layer is 0.01-1mm.

在一些优选的实施方式中,所述LED蓝光芯片正装、倒装或垂直装于所述载体上。In some preferred embodiments, the LED blue light chip is mounted on the carrier upright, upside down or vertically.

在一些优选的实施方式中,所述载体为陶瓷基板、高分子材料基板或金属基板中的任一种。In some preferred embodiments, the carrier is any one of a ceramic substrate, a polymer material substrate or a metal substrate.

在一些优选的实施方式中,所述量子点颗粒还包括金属纳米颗粒,所述金属纳米颗粒分布在所述介孔材料中。In some preferred embodiments, the quantum dot particles further include metal nanoparticles, and the metal nanoparticles are distributed in the mesoporous material.

在进一步优选的实施方式中,所述金属纳米颗粒为纳米金、纳米银或纳米铂。In a further preferred embodiment, the metal nanoparticles are nano-gold, nano-silver or nano-platinum.

在一些优选的实施方式中,所述阻水阻氧材料为氧化聚乙烯蜡、聚乙烯、聚苯乙烯、聚对二甲苯、聚碳酸酯或聚甲基丙烯酸甲酯中的至少一种。In some preferred embodiments, the water and oxygen blocking material is at least one of oxidized polyethylene wax, polyethylene, polystyrene, parylene, polycarbonate or polymethyl methacrylate.

在一些优选的实施方式中,所述介孔材料为介孔二氧化硅材料、介孔二氧化钛材料、介孔二氧化锌材料、分子筛或金属有机骨架化合物。In some preferred embodiments, the mesoporous material is a mesoporous silica material, a mesoporous titania material, a mesoporous zinc dioxide material, a molecular sieve or a metal organic framework compound.

本发明还提供了一种如上所述的基于量子点颗粒的LED封装器件的制备方法,包括以下步骤:The present invention also provides a method for preparing an LED packaging device based on quantum dot particles as described above, comprising the following steps:

S1:将LED芯片装于载体上;S1: install the LED chip on the carrier;

S2:在所述LED蓝光芯片上涂覆一层荧光粉胶层;S2: Coating a layer of phosphor powder adhesive layer on the LED blue light chip;

S3:在所述荧光粉胶层上覆一层透明胶层;S3: coating a transparent adhesive layer on the fluorescent powder adhesive layer;

S4:取量子点颗粒和透明凝胶材料混合,涂覆于所述透明胶层上,得到一层量子点胶层,其中,所述量子点颗粒包括量子点、介孔材料和阻水阻氧材料,所述量子点分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。S4: Mix quantum dot particles and transparent gel material, and coat on the transparent adhesive layer to obtain a layer of quantum dot adhesive layer, wherein the quantum dot particles include quantum dots, mesoporous materials, and water and oxygen blocking materials. material, the quantum dots are distributed in the mesoporous material, and the gap between the quantum dots and the mesoporous material is filled with the water and oxygen blocking material.

在一些优选的实施方式中,实施S4所述的涂覆是采用喷涂工艺、点胶工艺或模具工艺涂覆。In some preferred embodiments, the coating described in S4 is performed by spraying, dispensing or mold coating.

在一些优选的实施方式中,实施S2所述的涂覆是采用喷涂工艺、点胶工艺、点胶沉积工艺或模具工艺涂覆。In some preferred embodiments, the coating described in S2 is carried out by spraying process, dispensing process, dispensing deposition process or mold process.

在一些优选的实施方式中,在所述S4后还包括S5:在所述量子点胶层上涂覆一层透明胶层。In some preferred embodiments, S5 is further included after S4: coating a transparent adhesive layer on the quantum dot adhesive layer.

本发明的有益效果是:The beneficial effects of the present invention are:

本发明提供了一种基于量子点颗粒的LED封装器件,包括载体,设于载体上的LED蓝光芯片,所述LED蓝光芯片上依次覆有荧光粉胶层、透明胶层和量子点胶层,所述量子点胶层是具有阻水阻氧性能的量子点颗粒和透明凝胶材料混合后涂覆得到,其中,所述量子点颗粒包括量子点、介孔材料和阻水阻氧材料,所述量子点分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料;本发明将量子点颗粒分散于透明凝胶材料后直接涂覆,采用芯片直接接触式封装,大大提高了LED的光效;将所述量子点颗粒用于直接进行蓝光LED芯片接触式封装,制成白光LED器件,其饱和红色的显示指数R9值为47-99,市场上较优质的白光LED器件的R9值为通常在-110~-90,本发明所述LED封装器件可以完全地表现饱和广色域颜色,并能在高色温底下达到高显色指数与高R9和高R11值,使用量子点LED封装器件可使NTSC色域值能够达到110%左右,不仅色彩鲜艳,亮度和能效明显的大幅度提高。本发明所述LED封装器件能发射出全光谱,即涵盖整个可见光和红外光区,它们能局限量子发旋光性质,并释放出较小频宽的色光,发射出的波长半宽度在20 nm以下,因而呈现出更加饱和的光色,量子效率可达80%,以后还将会有更高的提升空间。The invention provides an LED packaging device based on quantum dot particles, including a carrier, an LED blue light chip arranged on the carrier, and the LED blue light chip is covered with a fluorescent powder glue layer, a transparent glue layer and a quantum dot glue layer in sequence, The quantum dot glue layer is obtained by mixing quantum dot particles with water and oxygen blocking properties and a transparent gel material, wherein the quantum dot particles include quantum dots, mesoporous materials, and water and oxygen blocking materials. The quantum dots are distributed in the mesoporous material, and the gap between the quantum dots and the mesoporous material is filled with the water and oxygen blocking material; the present invention disperses the quantum dot particles in the transparent gel material Direct coating, using chip direct contact packaging, greatly improves the light efficiency of LED; the quantum dot particles are used to directly carry out blue LED chip contact packaging to make white LED devices, and its saturated red display index R9 value is 47-99, and the R9 value of high-quality white LED devices on the market is usually -110~-90. The LED packaging device of the present invention can fully express saturated wide color gamut colors, and can achieve high color temperature under high color temperature. Color rendering index and high R9 and high R11 values, the use of quantum dot LED packaging devices can make the NTSC color gamut value reach about 110%, not only bright colors, but also significantly improve brightness and energy efficiency. The LED packaging device of the present invention can emit a full spectrum, that is, cover the entire visible light and infrared light regions, they can limit the optical rotation properties of quantum luminescence, and release colored light with a small bandwidth, and the half-width of the emitted wavelength is below 20 nm , so it presents a more saturated light color, and the quantum efficiency can reach 80%, and there will be higher room for improvement in the future.

附图说明Description of drawings

图1为实施例1的量子点复合荧光颗粒的结构示意图;Fig. 1 is the structural representation of the quantum dot composite fluorescent particle of embodiment 1;

图2为实施例1的量子点颗粒随LED点亮时间的衰退示意图;Fig. 2 is the decay schematic diagram of the quantum dot particle of embodiment 1 along with LED lighting time;

图3为实施例1的LED封装器件的截面图;Fig. 3 is the sectional view of the LED packaging device of embodiment 1;

图4为实施例2的量子点颗粒的荧光强度曲线;Fig. 4 is the fluorescence intensity curve of the quantum dot particle of embodiment 2;

图5为实施例2的LED封装器件的截面图;Fig. 5 is the sectional view of the LED packaging device of embodiment 2;

图6为实施例3的LED封装器件的截面图;Fig. 6 is the sectional view of the LED packaging device of embodiment 3;

图7为实施例4的LED封装器件的截面图;Fig. 7 is the sectional view of the LED packaging device of embodiment 4;

图8为实施例5的LED封装器件的截面图;8 is a cross-sectional view of the LED packaging device of Embodiment 5;

图9为实施例6的LED封装器件的截面图;9 is a cross-sectional view of the LED packaging device of Embodiment 6;

图10为市场所售4K电视所使用的白光LED灯珠的光谱测试报告;Figure 10 is the spectral test report of white LED lamp beads used in 4K TVs sold in the market;

图11为基于量子点颗粒的LED封装器件的光谱测试报告。Fig. 11 is a spectral test report of an LED packaging device based on quantum dot particles.

具体实施方式detailed description

实施例1:Example 1:

量子点颗粒的制备,要实现量子点嵌入介孔材料可以采用以下三种方法,但不限于以下方法:For the preparation of quantum dot particles, the following three methods can be used to realize quantum dot embedding in mesoporous materials, but not limited to the following methods:

1、使用物理法将量子点通过物理肿胀和溶剂挥发的方式嵌入介孔材料;1. Use physical methods to embed quantum dots into mesoporous materials through physical swelling and solvent volatilization;

2、原位生长量子点,即在介孔材料中原位生长量子点;2. In-situ growth of quantum dots, that is, in-situ growth of quantum dots in mesoporous materials;

3、原位生长介孔材料,即在量子点溶液中原位生长介孔材料。3. In-situ growth of mesoporous materials, that is, in-situ growth of mesoporous materials in quantum dot solutions.

在本实施例中,采用物理法制备量子点颗粒,将量子点通过物理肿胀和溶剂挥发的方式嵌入介孔材料,具体步骤如下:In this example, quantum dot particles are prepared by physical methods, and quantum dots are embedded in mesoporous materials through physical swelling and solvent volatilization. The specific steps are as follows:

1、取介孔材料,介孔材料为介孔二氧化硅,粒径为30~60μm,介孔孔径为7~8nm,取1g介孔二氧化硅材料分散在100mL正己烷中,浸泡和活化介孔二氧化硅表面,然后加热回流,保温10h,加惰性气氛保护;1. Take the mesoporous material, the mesoporous material is mesoporous silica, the particle size is 30~60μm, the mesopore diameter is 7~8nm, take 1g of mesoporous silica material and disperse it in 100mL n-hexane, soak and activate The surface of mesoporous silica, then heated to reflux, kept for 10h, and protected by an inert atmosphere;

2、量子点为CdSe,平均尺寸为4~6nm,取10mg量子点分散到10mL正己烷中,再将量子点溶液分散到介孔二氧化硅溶液,快速搅拌2h,让量子点能够进入介孔二氧化硅;然后撤掉回流设备,鼓入惰性气氛,使得溶液几乎完全挥发,再加入新的溶液,通过不断改变浓度的方式,介孔二氧化硅在加热溶液中肿胀,使得量子点由于浓度差、有效率的进入介孔二氧化硅,反复肿胀-溶剂挥发操作,时间为1~10h;正己烷彻底挥发后,在惰性气体保护下,自然冷却,然后在真空干燥箱中干燥,得到量子点-介孔材料粉末;2. The quantum dots are CdSe, with an average size of 4~6nm. Take 10mg of quantum dots and disperse them in 10mL of n-hexane, then disperse the quantum dots solution into the mesoporous silica solution, and stir for 2 hours quickly, so that the quantum dots can enter the mesoporous Silica; then remove the reflux equipment, blow in an inert atmosphere, make the solution almost completely volatilize, and then add a new solution, by constantly changing the concentration, the mesoporous silica swells in the heating solution, so that the quantum dots due to the concentration Poor and efficient entry into mesoporous silica, repeated swelling-solvent volatilization operation, the time is 1~10h; after the n-hexane is completely volatilized, it is naturally cooled under the protection of an inert gas, and then dried in a vacuum oven to obtain quantum point - mesoporous material powder;

3、取200mg氧化聚乙烯蜡分散至50mL甲苯,加热至固体融化,得到澄清透明的溶液;3. Disperse 200mg of oxidized polyethylene wax into 50mL of toluene, heat until the solid melts, and obtain a clear and transparent solution;

4、将步骤2的量子点-介孔材料粉末加入到氧化聚乙烯蜡溶液中,快速搅拌,氧化聚乙烯蜡由于浓度差会进入介孔材料,填充量子点和介孔材料之间的间隙,待溶剂蒸发完全,得到量子点复合荧光颗粒。其结构如图1所示,1是量子点,2是介孔材料(介孔二氧化硅),3是阻水阻氧材料(氧化聚乙烯蜡)。4. Add the quantum dot-mesoporous material powder in step 2 into the oxidized polyethylene wax solution, stir quickly, and the oxidized polyethylene wax will enter the mesoporous material due to the concentration difference, filling the gap between the quantum dot and the mesoporous material, After the solvent is completely evaporated, the quantum dot composite fluorescent particles are obtained. Its structure is shown in Figure 1, 1 is a quantum dot, 2 is a mesoporous material (mesoporous silica), and 3 is a water-blocking and oxygen-blocking material (oxidized polyethylene wax).

另外按照步骤1、2制备没有填充阻水阻氧材料的量子点复合荧光颗粒作为对比产品。In addition, according to steps 1 and 2, quantum dot composite fluorescent particles not filled with water and oxygen blocking materials were prepared as a comparative product.

制备LED封装器件:取蓝光LED芯片垂直装于载体的碗杯内,首先使用银胶、助焊剂等固晶,所述载体为氮化铝陶瓷基板,烘烤,然后焊线;再采用点胶工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上和载体的碗杯内,所述透明凝胶材料为硅胶,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;再采用点胶的工艺在荧光粉胶层上涂覆一层硅胶层,烤箱烘烤;取上述制备所得的量子点颗粒与硅胶混合,所述量子点颗粒包括量子点、介孔材料和阻水阻氧材料,所述量子点分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料,所述介孔材料为介孔二氧化硅材料,所述阻水阻氧材料为氧化聚乙烯蜡,采用点胶工艺将量子点颗粒和硅胶混合材料涂覆在硅胶层上,烤箱烘烤,得到LED封装器件,其结构截面图如图3。Preparation of LED packaging devices: take the blue light LED chip and vertically install it in the bowl of the carrier, first use silver glue, flux, etc. to solidify the crystal, the carrier is an aluminum nitride ceramic substrate, bake, and then weld the wire; then use glue dispensing Process Coat the mixed material of fluorescent powder and transparent gel material on the blue LED chip and in the bowl cup of the carrier. The transparent gel material is silica gel to obtain a layer of fluorescent powder adhesive layer covering the blue LED chip. Baking; then apply a layer of silica gel on the fluorescent powder glue layer by dispensing technology, and bake in an oven; mix the quantum dot particles prepared above with silica gel, and the quantum dot particles include quantum dots, mesoporous materials and a water and oxygen blocking material, the quantum dots are distributed in the mesoporous material, the gap between the quantum dots and the mesoporous material is filled with the water and oxygen blocking material, and the mesoporous material It is a mesoporous silica material, and the water and oxygen blocking material is oxidized polyethylene wax. The mixed material of quantum dot particles and silica gel is coated on the silica gel layer by a dispensing process, and baked in an oven to obtain an LED packaging device. The cross-sectional view of the structure is shown in Figure 3.

参照图3,可以看到,所得的基于量子点颗粒的LED封装器件包括载体4和垂直装于所述载体4碗杯内的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7和量子点胶层8,所述量子点胶层8的厚度为0.2mm,所述透明胶层7为硅胶层。Referring to Fig. 3, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue light chip 5 vertically mounted in the bowl of the carrier 4, and the LED blue light chip 5 is covered with phosphors in turn. The glue layer 6, the transparent glue layer 7 and the quantum dot glue layer 8, the thickness of the quantum dot glue layer 8 is 0.2 mm, and the transparent glue layer 7 is a silica gel layer.

将对比产品按照上述步骤制备LED封装器件,分析根据本发明所述量子点颗粒和对比产品的光转化效率衰退情况,得到光转换效率衰退比率如图2所示,随着点亮时间增加,图中实心圆点表示本发明所述量子点颗粒(填充有阻水阻氧材料的量子点颗粒),本发明所述量子点颗粒在一个月内光转换效率基本没有衰退,图中空心圆点表示对比产品(没有填充阻水阻氧材料的量子点颗粒)光转换效率逐步消退,一个月后剩余60%左右,这证明在量子点和介孔材料之间的间隙填充阻水阻氧材料后,提高了量子点复合荧光颗粒的阻隔特性,进而提升其稳定性。在量子点和介孔材料之间的间隙填充阻水阻氧材料,可以使得量子点的载体材料更加致密,大大提高了量子点颗粒的阻隔特性,因此提升了量子点颗粒的稳定性;所得量子点颗粒具有很高的量子效率;量子点颗粒具有介孔结构,从而大大减小了量子点在量子点颗粒中的聚集带来的效率衰退或者猝灭;量子点颗粒具有阻挡层结构,提升了量子点能承受的温度,提高了使用效率,使得量子点颗粒及其LED封装器件具有优异的使用寿命。The comparison product is prepared according to the above steps for LED packaged devices, and the light conversion efficiency decline situation of the quantum dot particles according to the present invention and the comparison product is analyzed, and the light conversion efficiency decline ratio is obtained as shown in Figure 2. As the lighting time increases, the figure The solid dots in the middle represent the quantum dot particles of the present invention (quantum dot particles filled with water and oxygen blocking materials), and the light conversion efficiency of the quantum dot particles of the present invention basically does not decline within one month, and the hollow dots in the figure represent The light conversion efficiency of the comparative product (quantum dot particles not filled with water-blocking and oxygen-blocking materials) gradually faded, and remained at about 60% after one month, which proves that after filling the gap between the quantum dots and the mesoporous material, the The barrier properties of the quantum dot composite fluorescent particles are improved, thereby improving their stability. Filling the gap between quantum dots and mesoporous materials with water and oxygen barrier materials can make the carrier material of quantum dots more compact, greatly improving the barrier properties of quantum dot particles, thus improving the stability of quantum dot particles; the obtained quantum dots Dot particles have high quantum efficiency; quantum dot particles have a mesoporous structure, which greatly reduces the efficiency decline or quenching caused by the aggregation of quantum dots in quantum dot particles; quantum dot particles have a barrier layer structure, which improves The temperature that the quantum dots can withstand improves the use efficiency, so that the quantum dot particles and their LED packaging devices have excellent service life.

实施例2:Example 2:

含金属纳米颗粒的量子点颗粒的制备,具体步骤为:The preparation of quantum dot particles containing metal nanoparticles, the specific steps are:

1、取1g介孔二氧化钛和1mL三角形纳米金颗粒分散在100mL正己烷中,浸泡和活化介孔二氧化钛表面,然后加热回流,保温10h,加惰性气氛保护,撤掉回流系统,让溶剂蒸发,得到白色的金属-介孔二氧化钛复合颗粒粉末;1. Disperse 1g of mesoporous titanium dioxide and 1mL of triangular gold nanoparticles in 100mL of n-hexane, soak and activate the surface of mesoporous titanium dioxide, then heat to reflux, keep warm for 10h, add an inert atmosphere to protect, remove the reflux system, let the solvent evaporate, and get White metal-mesoporous titanium dioxide composite particle powder;

2、将得到的复合颗粒粉末在200℃、惰性气氛保护下煅烧处理,然后重新分散到50mL甲苯中;2. Calcinate the obtained composite particle powder at 200°C under the protection of an inert atmosphere, and then redisperse it in 50mL of toluene;

3、取10mg发射波长在530nm的CdSe/ZnS量子点分散到10mL甲苯,再将量子点溶液分散到步骤2的金属-介孔二氧化钛,快速搅拌2h,让量子点能够进入介孔二氧化硅;然后撤掉回流设备,鼓入惰性气氛,使得溶液几乎完全挥发,再加入新的溶液,通过不断改变浓度的方式,介孔二氧化硅在加热溶液中肿胀,使得量子点由于浓度差、有效率的进入介孔二氧化钛,反复肿胀-溶剂挥发操作,时间为1~10h;正己烷彻底挥发后,在惰性气体保护下,自然冷却,然后在真空干燥箱中干燥,得到量子点-介孔材料粉末;3. Take 10 mg of CdSe/ZnS quantum dots with an emission wavelength of 530 nm and disperse them into 10 mL of toluene, then disperse the quantum dot solution into the metal-mesoporous titanium dioxide in step 2, and stir rapidly for 2 hours to allow the quantum dots to enter the mesoporous silica; Then remove the reflux equipment, blow in an inert atmosphere, make the solution almost completely volatilize, and then add a new solution, by constantly changing the concentration, the mesoporous silica will swell in the heating solution, so that the quantum dots will be swollen due to the poor concentration and high efficiency. into the mesoporous titanium dioxide, repeated swelling-solvent volatilization operation, the time is 1~10h; after the n-hexane is completely volatilized, it is naturally cooled under the protection of an inert gas, and then dried in a vacuum oven to obtain the quantum dot-mesoporous material powder ;

4、取100mg聚乙烯分散至50mL氯仿,加热至固体融化,得到澄清透明的溶液;4. Disperse 100mg of polyethylene into 50mL of chloroform, heat until the solid melts, and obtain a clear and transparent solution;

5、将步骤3的量子点-介孔材料粉末加入到聚乙烯溶液中,快速搅拌,聚乙烯由于浓度差会进入介孔材料,填充量子点和介孔材料之间的间隙,待溶剂蒸发完全,得到含纳米金的量子点复合荧光颗粒。5. Add the quantum dot-mesoporous material powder in step 3 into the polyethylene solution, stir quickly, polyethylene will enter the mesoporous material due to the concentration difference, fill the gap between the quantum dot and the mesoporous material, and wait for the solvent to evaporate completely , to obtain quantum dot composite fluorescent particles containing gold nanoparticles.

另外参照以上步骤制备没有加入纳米金的量子点颗粒,当纳米金的吸收波长和量子点的发射波长匹配,且纳米金和量子点的间距合适时,金属颗粒可以通过等离子共振的方式参与发光,分别分析本发明所述量子点颗粒(加入纳米金的量子点颗粒)和未加入纳米金的量子点颗粒,得到图4,本发明所述量子点颗粒(加入纳米金的量子点颗粒)的荧光强度如曲线1所示,未加入纳米金的量子点颗粒的荧光强度如曲线2所示,从图4中可以看到,本发明所述量子点颗粒的荧光强度(曲线1)比没有加入纳米金的量子点颗粒(曲线2)要强1.7倍。金属纳米颗粒可以帮助量子点俘获更多的蓝光,提高蓝光的利用率。在实际生产中,增加金属纳米颗粒可以获得同样的光转换效果,可以减少量子点的使用,从而降低量子点中重金属的使用,更加绿色环保。金属纳米颗粒对提高量子点荧光强度有两种作用机理:(1)纳米金属颗粒的自由电子在外界电磁场作用下规则运动而产生的表面等离子体可极大地增强粒子周围的电磁场,当入射光频率与金属颗粒自由电子固有频率一致时,产生表面等离子体共振,使局域场增强达到最大,这一增强的局域场使金属颗粒表面附近的量子点的激发速率得到增强,发光强度增强;(2)金属纳米颗粒与量子点的耦合辐射过程,量子点与金属颗粒之间发生非辐射能量转移,由激发的量子点耦合为LSPR能量,LSPR反过来辐射到远场。In addition, refer to the above steps to prepare quantum dot particles without adding nano-gold. When the absorption wavelength of nano-gold matches the emission wavelength of quantum dots, and the distance between nano-gold and quantum dots is appropriate, the metal particles can participate in luminescence through plasmon resonance. The quantum dot particles of the present invention (quantum dot particles added with gold nanoparticles) and the quantum dot particles without gold nanoparticles were analyzed respectively to obtain Fig. 4, the fluorescence of the quantum dot particles of the present invention (quantum dot particles added with gold nanoparticles) The intensity is shown in curve 1, and the fluorescence intensity of the quantum dot particles without adding nano gold is shown in curve 2. As can be seen from Figure 4, the fluorescence intensity of the quantum dot particles of the present invention (curve 1) is higher than that without adding nano gold The gold quantum dot particles (curve 2) are 1.7 times stronger. Metal nanoparticles can help quantum dots capture more blue light and improve the utilization rate of blue light. In actual production, the same light conversion effect can be obtained by adding metal nanoparticles, which can reduce the use of quantum dots, thereby reducing the use of heavy metals in quantum dots, which is more environmentally friendly. Metal nanoparticles have two mechanisms for increasing the fluorescence intensity of quantum dots: (1) The surface plasmons generated by the free electrons of nano-metal particles moving regularly under the action of an external electromagnetic field can greatly enhance the electromagnetic field around the particles. When the incident light frequency When it is consistent with the natural frequency of free electrons of metal particles, surface plasmon resonance is generated, which maximizes the local field enhancement. This enhanced local field enhances the excitation rate of quantum dots near the surface of metal particles and enhances the luminous intensity; ( 2) The coupling radiation process between metal nanoparticles and quantum dots, non-radiative energy transfer occurs between quantum dots and metal particles, and the excited quantum dots are coupled into LSPR energy, which in turn radiates to the far field.

制备LED封装器件:取蓝光LED芯片倒装于载体的碗杯内,首先使用银胶、助焊剂等固晶,所述载体为氧化铝陶瓷基板,烘烤,然后焊线;再采用点胶沉积工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上和载体的碗杯内,即点胶之后采用离心机高速离心让荧光粉在透明凝胶材料中快速沉淀,让荧光粉快速均匀沉积在蓝光LED芯片表面附近,所述透明凝胶材料为环氧树脂,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;再采用点胶的工艺在荧光粉胶层上涂覆一层环氧树脂层,烤箱烘烤;取上述制备所得的量子点颗粒与环氧树脂混合,采用点胶工艺将量子点颗粒和环氧树脂混合材料涂覆在环氧树脂层上,烤箱烘烤,得到量子点胶层,所述量子点颗粒包括量子点、金属纳米颗粒、介孔材料和阻水阻氧材料,所述量子点和所述金属纳米颗粒分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料,所述介孔材料为介孔二氧化钛材料,所述阻水阻氧材料为聚乙烯,所述金属纳米颗粒为纳米金;再采用点胶的工艺在所述量子点胶层上涂覆一层环氧树脂层,得到LED封装器件,其结构截面图如图5。Preparation of LED packaging devices: Take the blue LED chip and place it upside down in the bowl of the carrier, first use silver glue, flux, etc. to solidify the crystal, the carrier is an alumina ceramic substrate, bake it, and then weld the wire; then use glue dispensing to deposit The process coats the mixed material of phosphor powder and transparent gel material on the blue LED chip and in the bowl of the carrier, that is, after dispensing, use a centrifuge to centrifuge at a high speed to allow the phosphor powder to quickly precipitate in the transparent gel material, so that the phosphor powder can quickly Uniformly deposited near the surface of the blue LED chip, the transparent gel material is epoxy resin, to obtain a layer of fluorescent powder adhesive layer covering the blue LED chip, baked in an oven; Coat a layer of epoxy resin on the top, and bake in an oven; mix the quantum dot particles prepared above with epoxy resin, and apply the mixed material of quantum dot particles and epoxy resin on the epoxy resin layer by dispensing process , baked in an oven to obtain a quantum dot glue layer, the quantum dot particles include quantum dots, metal nanoparticles, mesoporous materials and water and oxygen blocking materials, and the quantum dots and the metal nanoparticles are distributed in the mesoporous In the material, the gap between the quantum dots and the mesoporous material is filled with the water-blocking and oxygen-blocking material, the mesoporous material is a mesoporous titanium dioxide material, and the water-blocking and oxygen-blocking material is polyethylene, The metal nanoparticles are gold nanoparticles; a layer of epoxy resin is coated on the quantum dot glue layer by a dispensing process to obtain an LED packaging device, and its structural cross-sectional view is shown in FIG. 5 .

参照图5,可以看到,所得的基于量子点颗粒的LED封装器件,包括载体4和倒装于所述载体4碗杯内的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7、量子点胶层8和透明胶层7,所述量子点胶层8的厚度为1mm,所述透明胶层7为环氧树脂层。所述荧光粉胶层6用于是采用点胶沉积工艺涂覆得到,所以荧光粉均匀沉积在蓝光LED芯片表面附近,一方面,能够更好地接收LED芯片所发射的光线,另一方面,由于荧光粉沉积在所述荧光粉胶层6的底部,相较于普通点胶工艺制备得到的荧光粉胶层,荧光粉与所述量子点胶层相隔较远,能够降低所述量子点胶层8的温度,能够使得所述量子点胶层中的量子点颗粒使用寿命更长。在所述量子点胶层8上制备一层透明胶层7可以更好地将量子点与外界隔离,能够增强阻氧阻水效果,进一步提高LED封装器件的使用寿命。Referring to Fig. 5, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue chip 5 flipped in the bowl of the carrier 4, and the LED blue chip 5 is sequentially covered with fluorescent light. Powder glue layer 6, transparent glue layer 7, quantum dot glue layer 8 and transparent glue layer 7, the thickness of the quantum dot glue layer 8 is 1 mm, and the transparent glue layer 7 is an epoxy resin layer. The fluorescent powder adhesive layer 6 is obtained by applying a dispensing deposition process, so the fluorescent powder is evenly deposited near the surface of the blue LED chip. On the one hand, it can better receive the light emitted by the LED chip. On the other hand, due to Phosphor powder is deposited on the bottom of the phosphor powder glue layer 6. Compared with the phosphor powder glue layer prepared by ordinary glue dispensing process, the phosphor powder is far away from the quantum dot glue layer, which can reduce the quantum dot glue layer. The temperature of 8 can make the quantum dot particles in the quantum dot glue layer have a longer service life. Preparation of a layer of transparent adhesive layer 7 on the quantum dot adhesive layer 8 can better isolate the quantum dots from the outside world, enhance the effect of oxygen and water resistance, and further improve the service life of the LED packaging device.

实施例3:Example 3:

采用如实施例2所述的量子点颗粒的制备方法,采用介孔二氧化锌材料作为介孔材料,金属纳米颗粒选用纳米银,阻水阻氧材料为聚苯乙烯,制备得到的所述量子点颗粒,包括量子点、金属纳米颗粒、介孔材料和阻水阻氧材料,所述量子点和所述金属纳米颗粒分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。Using the preparation method of quantum dot particles as described in Example 2, using mesoporous zinc dioxide material as the mesoporous material, using nano-silver as the metal nanoparticle, and polystyrene as the water and oxygen blocking material, the prepared quantum dots Point particles, including quantum dots, metal nanoparticles, mesoporous materials and water and oxygen blocking materials, the quantum dots and the metal nanoparticles are distributed in the mesoporous material, and the quantum dots and the mesoporous The gap between the materials is filled with the water and oxygen blocking material.

制备LED封装器件:蓝光LED芯片正装于载体的碗杯内,首先使用银胶、白胶等固晶,所述载体为铜基板,烘烤,然后焊线;再采用点胶工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上和载体的碗杯内,所述透明凝胶材料为硅胶,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;再采用点胶的工艺在荧光粉胶层上涂覆一层硅胶层,烤箱烘烤;取上述制备所得的量子点颗粒与硅胶混合,采用点胶工艺将量子点颗粒和硅胶混合材料涂覆在硅胶层上,烤箱烘烤,得到量子点胶层;再采用点胶的工艺在所述量子点胶层上涂覆一层硅胶层,得到LED封装器件,其结构截面图如图6。Preparation of LED packaging devices: the blue LED chip is installed in the bowl of the carrier, first use silver glue, white glue, etc. to solidify the crystal, the carrier is a copper substrate, bake, and then weld the wire; then use the dispensing process to glue the phosphor and The mixed material of the transparent gel material is coated on the blue LED chip and in the bowl of the carrier, the transparent gel material is silica gel, and a layer of fluorescent powder adhesive layer covering the blue LED chip is obtained, and baked in an oven; The dispensing process coats a layer of silica gel on the fluorescent powder adhesive layer and bakes in an oven; mixes the quantum dot particles prepared above with silica gel, and coats the mixed material of quantum dot particles and silica gel on the silica gel layer by dispensing process Step 1: Baking in an oven to obtain a quantum dot layer; and then applying a glue dispensing process to coat a layer of silica gel on the quantum dot layer to obtain an LED packaging device. The structural cross-sectional view is shown in Figure 6.

参照图6,可以看到,所得的基于量子点颗粒的LED封装器件,包括载体4和正装于所述载体4碗杯内的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7、量子点胶层8和透明胶层7,所述量子点胶层8的厚度为0.3mm,所述透明胶层7为硅胶层。在所述量子点胶层8上再制备一层透明胶层7可以更好地将量子点与外界隔离,能够增强阻氧阻水效果,进一步提高LED封装器件的使用寿命。Referring to Fig. 6, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue light chip 5 that is mounted in the bowl of the carrier 4, and the LED blue light chip 5 is sequentially covered with phosphor powder. Adhesive layer 6, transparent adhesive layer 7, quantum dot adhesive layer 8 and transparent adhesive layer 7, the thickness of the quantum dot adhesive layer 8 is 0.3 mm, and the transparent adhesive layer 7 is a silica gel layer. A layer of transparent adhesive layer 7 prepared on the quantum dot adhesive layer 8 can better isolate the quantum dots from the outside world, enhance the effect of oxygen and water resistance, and further improve the service life of the LED packaging device.

实施例4:Example 4:

采用如实施例2所述的量子点颗粒的制备方法,采用分子筛作为介孔材料,金属纳米颗粒选用纳米铂,阻水阻氧材料为聚对二甲苯,制备得到的所述量子点颗粒,包括量子点、金属纳米颗粒、介孔材料和阻水阻氧材料,所述量子点和所述金属纳米颗粒分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。Using the preparation method of quantum dot particles as described in Example 2, molecular sieves are used as mesoporous materials, nano-platinum is selected for metal nanoparticles, and the water and oxygen blocking material is parylene. The prepared quantum dot particles include: Quantum dots, metal nanoparticles, mesoporous materials, and water and oxygen blocking materials, the quantum dots and the metal nanoparticles are distributed in the mesoporous materials, and the gap between the quantum dots and the mesoporous materials The gap is filled with the water and oxygen blocking material.

制备LED封装器件:蓝光LED芯片垂直装于载体上,首先使用银胶、共金等固晶,所述载体为铝基板,烘烤,然后焊线;再采用喷涂工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上,所述透明凝胶材料为硅胶,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;再采用喷涂的工艺在荧光粉胶层上涂覆一层硅胶层,烤箱烘烤;取上述制备所得的量子点颗粒与硅胶混合,采用喷涂工艺将量子点颗粒和硅胶混合材料涂覆在硅胶层上,烤箱烘烤,得到量子点胶层;再采用喷涂的工艺在所述量子点胶层上涂覆一层硅胶层,得到LED封装器件,其结构截面图如图7。Preparation of LED packaging devices: the blue LED chip is vertically mounted on the carrier, first use silver glue, co-gold, etc. to solidify the crystal, the carrier is an aluminum substrate, bake, and then wire bond; then use the spraying process to spray the phosphor and transparent gel The material mixture is coated on the blue LED chip, the transparent gel material is silica gel, and a layer of fluorescent powder adhesive layer covering the blue LED chip is obtained, baked in an oven; and then sprayed on the fluorescent powder adhesive layer Coating a layer of silica gel and baking in an oven; mixing the quantum dot particles prepared above with silica gel, coating the mixed material of quantum dot particles and silica gel on the silica gel layer by spraying process, and baking in an oven to obtain a quantum dot adhesive layer and then apply a spraying process to coat a layer of silica gel on the quantum dot layer to obtain an LED packaging device, as shown in Figure 7.

采用喷涂工艺将量子点颗粒和硅胶混合材料涂覆在硅胶层上,较其他的涂覆工艺有一个显著的优点,其他涂覆工艺是制备得到的量子点胶层中量子点是随机分布的,自荧光粉胶层射来的光线并不会百分之百射到量子点上,而采用喷涂可以将量子点颗粒整齐致密地排布在硅胶层的上表面,因此所述量子点颗粒能够接收接近百分百的光线,能够提高量子点颗粒的效率。Using the spraying process to coat the quantum dot particles and silica gel mixed material on the silica gel layer has a significant advantage over other coating processes. The other coating processes are that the quantum dots in the prepared quantum dot glue layer are randomly distributed. The light emitted from the fluorescent powder adhesive layer does not hit the quantum dots 100%, but the quantum dot particles can be neatly and densely arranged on the upper surface of the silica gel layer by spraying, so the quantum dot particles can receive close to 100%. Hundreds of light can improve the efficiency of quantum dot particles.

参照图7,可以看到,所得的基于量子点颗粒的LED封装器件,包括载体4和垂直装于所述载体4上的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7、量子点胶层8和透明胶层7,所述量子点胶层8的厚度为0.01mm,所述透明胶层7为硅胶层。Referring to Fig. 7, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue chip 5 vertically mounted on the carrier 4, and the LED blue chip 5 is sequentially covered with phosphor glue. Layer 6, transparent glue layer 7, quantum dot glue layer 8 and transparent glue layer 7, the thickness of the quantum dot glue layer 8 is 0.01 mm, and the transparent glue layer 7 is a silica gel layer.

实施例5:Example 5:

采用如实施例2所述的量子点颗粒的制备方法,采用金属有机骨架化合物作为介孔材料,金属纳米颗粒选用纳米铂,阻水阻氧材料为聚碳酸酯,制备得到的所述量子点颗粒,包括量子点、金属纳米颗粒、介孔材料和阻水阻氧材料,所述量子点和所述金属纳米颗粒分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。Using the preparation method of quantum dot particles as described in Example 2, using a metal organic framework compound as a mesoporous material, using nano-platinum as a metal nanoparticle, and polycarbonate as a water and oxygen blocking material, the prepared quantum dot particles , including quantum dots, metal nanoparticles, mesoporous materials and water and oxygen blocking materials, the quantum dots and the metal nanoparticles are distributed in the mesoporous material, between the quantum dots and the mesoporous material The gap between them is filled with the water and oxygen blocking material.

制备LED封装器件:蓝光LED芯片倒装于载体上,首先使用银胶、锡膏、共金等固晶,所述载体为PPA基板,烘烤,然后焊线;再采用喷涂工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上,所述透明凝胶材料为硅胶,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;制作模具,采用直接压模成型工艺在荧光粉胶层上制备一层硅胶层,即,制备一个模具,将透明凝胶材料注入模具中,然后将所述S2得到的LED单元倒扣于所述模具中,所述LED蓝光芯片完全没入透明凝胶材料中,固化脱模,在所述荧光粉胶层上覆了一层透明胶层,烤箱烘烤;取上述制备所得的量子点颗粒与硅胶混合,制作模具,采用直接压模成型工艺用量子点颗粒和硅胶混合材料在硅胶层上制备一层量子点胶层,烤箱烘烤;再制作模具,采用直接压模成型工艺在所述量子点胶层上制备一层硅胶层,得到LED封装器件,其结构截面图如图8。Preparation of LED packaging devices: the blue LED chip is flipped on the carrier, first use silver glue, solder paste, co-gold, etc. to solidify the crystal, the carrier is a PPA substrate, bake, and then weld the wire; then use the spraying process to spray the phosphor and The transparent gel material mixed material is coated on the blue LED chip, the transparent gel material is silica gel, and a layer of fluorescent powder adhesive layer covering the blue LED chip is obtained, and the oven is baked; the mold is made by direct compression molding The process prepares a layer of silica gel on the fluorescent powder adhesive layer, that is, prepares a mold, injects transparent gel material into the mold, and then buckles the LED unit obtained in S2 into the mold, and the LED blue light chip Completely immersed in the transparent gel material, solidified and demoulded, covered with a layer of transparent adhesive layer on the fluorescent powder adhesive layer, baked in an oven; mixed the quantum dot particles prepared above with silica gel to make a mold, and directly pressed The molding process uses quantum dot particles and silica gel to prepare a layer of quantum dot layer on the silica gel layer, and then bakes it in an oven; then make a mold, and use a direct compression molding process to prepare a layer of silica gel layer on the quantum dot layer , to obtain an LED packaged device, the cross-sectional view of which is shown in FIG. 8 .

参照图8,可以看到,所得的基于量子点颗粒的LED封装器件,包括载体4和倒装于所述载体4上的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7、量子点胶层8和透明胶层7,所述量子点胶层8的厚度为1mm,所述透明胶层7为硅胶层。Referring to Fig. 8, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue chip 5 flip-mounted on the carrier 4, and the LED blue chip 5 is sequentially covered with phosphor glue. Layer 6, transparent glue layer 7, quantum dot glue layer 8 and transparent glue layer 7, the thickness of the quantum dot glue layer 8 is 1 mm, and the transparent glue layer 7 is a silica gel layer.

实施例6:Embodiment 6:

采用如实施例2所述的量子点颗粒的制备方法,采用介孔二氧化硅材料作为介孔材料,金属纳米颗粒选用纳米金,阻水阻氧材料为聚甲基丙烯酸甲酯,制备得到的所述量子点颗粒,包括量子点、金属纳米颗粒、介孔材料和阻水阻氧材料,所述量子点和所述金属纳米颗粒分布在所述介孔材料中,在所述量子点和所述介孔材料之间的间隙填充有所述阻水阻氧材料。Using the preparation method of quantum dot particles as described in Example 2, using mesoporous silica material as the mesoporous material, using nano-gold as the metal nanoparticle, and polymethyl methacrylate as the water and oxygen blocking material, the prepared The quantum dot particles include quantum dots, metal nanoparticles, mesoporous materials and water and oxygen blocking materials, the quantum dots and the metal nanoparticles are distributed in the mesoporous materials, and the quantum dots and the The gap between the mesoporous materials is filled with the water and oxygen blocking material.

制备LED封装器件:蓝光LED芯片正装于载体上,首先使用银胶、白胶等固晶,所述载体为PCT基板,烘烤,然后焊线;再采用模具工艺将荧光粉和透明凝胶材料混合材料涂覆在蓝光LED芯片上,所述透明凝胶材料为硅胶,得到覆盖在蓝光LED芯片上的一层荧光粉胶层,烤箱烘烤;再采用模具工艺在荧光粉胶层上制备一层硅胶层,烤箱烘烤;取上述制备所得的量子点颗粒与硅胶混合,制作模具,采用直接压模成型工艺用量子点颗粒和硅胶混合材料在硅胶层上制备一层量子点胶层,烤箱烘烤;再制作模具,采用直接压模成型工艺在所述量子点胶层上制备一层硅胶层,得到LED封装器件,其结构截面图如图9。Preparation of LED packaging devices: the blue LED chip is mounted on the carrier, first use silver glue, white glue, etc. to solidify the crystal, the carrier is a PCT substrate, bake, and then wire bond; then use the mold process to combine the phosphor and transparent gel material The mixed material is coated on the blue LED chip, the transparent gel material is silica gel, and a layer of fluorescent powder glue layer covering the blue light LED chip is obtained, and baked in an oven; Layer a silica gel layer, and bake in an oven; mix the quantum dot particles prepared above with silica gel to make a mold, and use a direct compression molding process to prepare a layer of quantum dot glue layer on the silica gel layer with quantum dot particles and silica gel mixed materials, and bake in an oven Baking; making a mold again, and preparing a layer of silica gel on the quantum dot glue layer by direct compression molding process to obtain an LED packaging device, the structural cross-sectional view of which is shown in Figure 9.

参照图9,可以看到,所得的基于量子点颗粒的LED封装器件,包括载体4和倒装于所述载体4上的LED蓝光芯片5,所述LED蓝光芯片5上依次覆有荧光粉胶层6、透明胶层7、量子点胶层8和透明胶层7,所述量子点胶层8的厚度为0.1mm,所述透明胶层7为硅胶层。Referring to Fig. 9, it can be seen that the obtained LED packaging device based on quantum dot particles includes a carrier 4 and an LED blue chip 5 flip-mounted on the carrier 4, and the LED blue chip 5 is sequentially covered with phosphor glue. Layer 6, transparent glue layer 7, quantum dot glue layer 8 and transparent glue layer 7, the thickness of the quantum dot glue layer 8 is 0.1 mm, and the transparent glue layer 7 is a silica gel layer.

取市场所售4K电视所使用的白光LED灯珠和依据本发明所述方法制备得到的LED封装器件进行光谱测试,得到光谱测试结果如图10和如图11,可以看到,市场所售白光LED灯珠在高色温下的Ra值为56.3,R9值为-113,R11值为40,而本发明所述方法制备得到的LED封装器件在高色温下的Ra值为90.8,R9值为87,R11值为94。本发明所述LED器件R9和R11值远远高于常规白光LED器件,可以完全地表现饱和广色域颜色,并能在高色温底下达到高显色指数与高R9值,使用量子点LED封装器件可使NTSC色域值能够达到110%左右,不仅色彩鲜艳,亮度和能效明显的大幅度提高,解决了目前常规的白光LED的R9(红光)和R11(绿光)的波段的缺失问题。Take the white LED lamp beads used in the 4K TVs sold in the market and the LED packaging device prepared according to the method of the present invention for spectrum testing, and the spectrum test results are as shown in Figure 10 and Figure 11. It can be seen that the white light lamps sold in the market The Ra value of the LED lamp bead at high color temperature is 56.3, the R9 value is -113, and the R11 value is 40, while the Ra value of the LED packaging device prepared by the method of the present invention is 90.8 at high color temperature, and the R9 value is 87. , R11 value is 94. The R9 and R11 values of the LED device of the present invention are much higher than those of conventional white LED devices, can fully express saturated wide color gamut colors, and can achieve high color rendering index and high R9 value under high color temperature, using quantum dot LED packaging The device can make the NTSC color gamut value reach about 110%, not only the color is bright, but the brightness and energy efficiency are significantly improved, and it solves the lack of R9 (red light) and R11 (green light) bands of conventional white LEDs. .

Claims (10)

1. a LED packaging based on quantum dot granule, including carrier and the LED blue chip being located on carrier, it is special Levy and be, described LED blue chip is covered with fluorescent material glue-line, substratum transparent and quantum dot glue-line, described quantum dot glue successively Layer be mixed by quantum dot granule and transparent gel material after coat and obtain, wherein, described quantum dot granule includes quantum dot, Jie Porous materials and the oxygen barrier material that blocks water, described quantum dot is distributed in described mesoporous material, at described quantum dot and described mesoporous material Gap between material blocks water oxygen barrier material described in being filled with.
LED packaging based on quantum dot granule the most according to claim 1, it is characterised in that described quantum dot glue Substratum transparent also it is covered with on layer.
LED packaging based on quantum dot granule the most according to claim 1 and 2, it is characterised in that described transparent adhesive tape Layer is layer of silica gel or epoxy resin layer.
LED packaging based on quantum dot granule the most according to claim 1 and 2, it is characterised in that described transparent solidifying Glue material is silica gel or epoxy resin.
LED packaging based on quantum dot granule the most according to claim 1 and 2, it is characterised in that described quantum dot The thickness of glue-line is 0.01-1mm.
LED packaging based on quantum dot granule the most according to claim 1 and 2, it is characterised in that described LED is blue Optical chip formal dress, upside-down mounting or be vertically loaded on described carrier.
7. a preparation method for the LED packaging based on quantum dot granule as described in any one of claim 1-6, it is special Levy and be, comprise the following steps:
S1: LED chip is loaded on carrier;
S2: coat layer of fluorescent powder glue-line on described LED blue chip;
S3: at described fluorescent material glue-line overlying layer of transparent glue-line;
S4: take quantum dot granule and transparent gel material mixing, be coated on described substratum transparent, obtain one layer of quantum dot glue Layer, wherein, described quantum dot granule includes quantum dot, mesoporous material and the oxygen barrier material that blocks water, and described quantum dot is distributed in described In mesoporous material, the gap between described quantum dot and described mesoporous material be filled with described in block water oxygen barrier material.
The preparation method of LED packaging based on quantum dot granule the most according to claim 7, it is characterised in that real Executing the coating described in S4 is to use spraying coating process, gluing process or mould process coating.
The preparation method of LED packaging based on quantum dot granule the most according to claim 7, it is characterised in that real Executing the coating described in S2 is to use spraying coating process, gluing process, some glue depositing operation or mould process coating.
The preparation method of LED packaging based on quantum dot granule the most according to claim 7, it is characterised in that S5 is also included: on described quantum dot glue-line, coat layer of transparent glue-line after described S4.
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CN107507901A (en) * 2017-07-31 2017-12-22 南方科技大学 LED photoelectric device based on surface plasmon enhancement and preparation method thereof
CN108155272A (en) * 2017-12-04 2018-06-12 佛山市国星光电股份有限公司 Quantum dot LED component and its packaging method, backlight lamp bar and backlight module
CN109004071A (en) * 2018-07-18 2018-12-14 易美芯光(北京)科技有限公司 A kind of encapsulating structure of quantum dot LED light emitting device
JP2019020733A (en) * 2017-07-19 2019-02-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Method for producing a plurality of conversion elements and optoelectronic component
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CN111548787A (en) * 2020-05-26 2020-08-18 天津市中环量子科技有限公司 Quantum dot composite material and its preparation method and LED device
CN112831320A (en) * 2021-01-05 2021-05-25 衢州职业技术学院 A kind of white light LED material for high-brightness display screen and its production process and device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102257646A (en) * 2008-12-19 2011-11-23 三星Led株式会社 Light emitting device package, backlight unit, display device and light emitting device
CN203481269U (en) * 2013-09-03 2014-03-12 易美芯光(北京)科技有限公司 LED package
JP2014056896A (en) * 2012-09-11 2014-03-27 Ns Materials Kk Light-emitting device utilizing semiconductor and manufacturing method of the same
CN105086993A (en) * 2015-09-11 2015-11-25 天津市中环量子科技有限公司 Fluorescent quantum dot micro-nano encapsulated composite material structure
CN105733556A (en) * 2016-03-21 2016-07-06 天津市中环量子科技有限公司 Quantum-dot composite fluorescent particles and LED module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102257646A (en) * 2008-12-19 2011-11-23 三星Led株式会社 Light emitting device package, backlight unit, display device and light emitting device
JP2014056896A (en) * 2012-09-11 2014-03-27 Ns Materials Kk Light-emitting device utilizing semiconductor and manufacturing method of the same
CN203481269U (en) * 2013-09-03 2014-03-12 易美芯光(北京)科技有限公司 LED package
CN105086993A (en) * 2015-09-11 2015-11-25 天津市中环量子科技有限公司 Fluorescent quantum dot micro-nano encapsulated composite material structure
CN105733556A (en) * 2016-03-21 2016-07-06 天津市中环量子科技有限公司 Quantum-dot composite fluorescent particles and LED module

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10854686B2 (en) 2016-11-28 2020-12-01 Boe Technology Group Co., Ltd. Package structure consisting of quantum dot material and packaging method for organic electroluminescence element and display device
CN106505157A (en) * 2016-11-28 2017-03-15 京东方科技集团股份有限公司 The encapsulating structure of organic electroluminescence device, method for packing and display device
CN106653979A (en) * 2016-12-27 2017-05-10 左洪波 Fabrication method of high-efficiency Q-LED package structure
CN106653985A (en) * 2017-02-20 2017-05-10 天津市中环量子科技有限公司 Multi-layer packaged quantum dot LED structure
CN107013819A (en) * 2017-05-26 2017-08-04 天津中环电子照明科技有限公司 Using the lamp and illuminator of technology of quantum dots
JP2019020733A (en) * 2017-07-19 2019-02-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Method for producing a plurality of conversion elements and optoelectronic component
US10804439B2 (en) 2017-07-19 2020-10-13 Osram Oled Gmbh Method of producing a plurality of conversion elements and optoelectronic component
CN107507901A (en) * 2017-07-31 2017-12-22 南方科技大学 LED photoelectric device based on surface plasmon enhancement and preparation method thereof
CN107394025A (en) * 2017-08-14 2017-11-24 天津中环电子照明科技有限公司 Thermal insulation layer reflecting LED packaging and light fixture
CN108155272A (en) * 2017-12-04 2018-06-12 佛山市国星光电股份有限公司 Quantum dot LED component and its packaging method, backlight lamp bar and backlight module
CN108155272B (en) * 2017-12-04 2019-12-24 佛山市国星光电股份有限公司 Quantum dot LED device and packaging method thereof, backlight strip and backlight module
CN109004071A (en) * 2018-07-18 2018-12-14 易美芯光(北京)科技有限公司 A kind of encapsulating structure of quantum dot LED light emitting device
CN110874991A (en) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 LED display device and manufacturing method thereof
WO2020063485A1 (en) * 2018-09-27 2020-04-02 纳晶科技股份有限公司 Manufacturing process of light-emitting part and light-emitting part
US12040426B2 (en) 2018-09-27 2024-07-16 Najing Technology Corporation Limited Manufacturing process of light emitting device comprising quantum dot film and transparent adhesive layer
CN110970541A (en) * 2018-09-29 2020-04-07 有研稀土新材料股份有限公司 Semiconductor light source and optical device prepared by same
CN110970541B (en) * 2018-09-29 2023-04-21 有研稀土新材料股份有限公司 Semiconductor light source and optical device prepared by same
CN111548787A (en) * 2020-05-26 2020-08-18 天津市中环量子科技有限公司 Quantum dot composite material and its preparation method and LED device
CN111548787B (en) * 2020-05-26 2024-03-19 天津市中环量子科技有限公司 Quantum dot composite material, preparation method thereof and LED device
CN112831320A (en) * 2021-01-05 2021-05-25 衢州职业技术学院 A kind of white light LED material for high-brightness display screen and its production process and device
CN112831320B (en) * 2021-01-05 2022-09-23 衢州职业技术学院 White light LED material for high-brightness display screen and production process and device thereof

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Application publication date: 20161116