CN106093138A - By manufacture method and the sensor of the sensor of metal-oxide detected gas - Google Patents
By manufacture method and the sensor of the sensor of metal-oxide detected gas Download PDFInfo
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- CN106093138A CN106093138A CN201610453753.7A CN201610453753A CN106093138A CN 106093138 A CN106093138 A CN 106093138A CN 201610453753 A CN201610453753 A CN 201610453753A CN 106093138 A CN106093138 A CN 106093138A
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 53
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000001312 dry etching Methods 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 117
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 8
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 54
- 238000010586 diagram Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- -1 oxygen ion Chemical class 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Molecular Biology (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The manufacture method of a kind of sensor by metal-oxide detected gas that the present invention provides and sensor, comprise the steps: to deposit the first silicon oxide film layer by plasma enhanced chemical vapor deposition method in silicon chip substrate；First metal film layer is carried out dry etching, the first metal film layer carves heating resistor layer figure；On the second metal film layer, deposit the 3rd metal film layer with physical vaporous deposition, and the 3rd metal film layer is carried out photoetching and dry etching；Dry or wet etch is utilized to be positioned at the second silicon oxide film layer corresponding with the second contact hole below the second contact hole；On a photoresist and the interior physical vaporous deposition of the second contact hole deposits metallic oxide film.Beneficial effects of the present invention is as follows: can accurately detect composition and the concentration of environmental gas.Therefore can reduce manufacturing cost, reduce volume and the power consumption of product, increase reliability and concordance, improve sensitivity and the precision of product.
Description
Technical field
The present invention relates to the manufacture method of a kind of sensor, particularly a kind of by PULSE HEATING burning analyte detection gas
The sensor that the manufacture method of the sensor of body and use the method manufacture.
Background technology
The quality of environment and the live and work comfort level of people, healthy closely bound up.In recent years, along with people are to ring
The requirement in border is more and more higher, it is desirable to simple and reliable, low-cost method and the quality of Product checking surrounding air,
Such as carbon monoxide, imflammable gas, ethanol, the discomfort of NO2 etc. or the aerial content of toxic gas.But, traditional
Gas sensor, volume is relatively big, and power consumption is higher, relatively costly, and reliability and concordance are poor, it is difficult at popular market such as hands
Promote on machine, housed device and wearable device.With the sensor of metal-oxide detected gas the most studied many time, relevant
Patent also have application and authorize.However, it is possible to accepted by the public and wide variety of product is little, as at mobile phone, domestic set
It is difficult to realize for popularization on wearable device.Its reason have two: one be some sensor be with thick-film technique manufacture
Metal-oxide gas transducer, complex process, concordance is poor, and volume is relatively big, relatively costly.Another reason is some sensing
Device unconventional semiconductor fabrication process such as MEMS technology manufacture, complex process, cost is high, and concordance and reliability are poor.
The such as patent application of application number 200710054450.9, is metal-oxide to be done by thick-film technique about one
The manufacture method of the sensor on potsherd, its shortcoming is that volume is big, and power consumption is high, it is difficult to produce in enormous quantities, and cost is high, unanimously
Property and poor repeatability.
The most such as patent application of application number CN201410397034.9, is to manufacture metal about one by the technique of MEMS
The manufacture method of oxide sensor.Its shortcoming be its MEMS technology used be non-standard semiconductor technology, technology difficulty is big,
Concordance and poor reliability, relatively costly, it is difficult to be used for producing in enormous quantities.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide a kind of volume reducing product and power consumption, increase
Reliability and concordance, improve the system of the sensor by metal-oxide detected gas measuring sensitivity and precision of product
Make method and sensor.
For solving above-mentioned technical problem, the present invention provides the manufacture of a kind of sensor by metal-oxide detected gas
Method, comprises the steps:
Step 1, deposits the first silicon oxide film layer by plasma enhanced chemical vapor deposition method in silicon chip substrate；
Step 2, utilizes physical vaporous deposition to deposit the first metal film layer on the first silicon oxide film layer；
Step 3, carries out dry etching to the first metal film layer, carves heating resistor layer figure on the first metal film layer
Shape；
Step 4, utilizes plasma enhanced chemical vapor deposition method deposition silicon nitride film on the first metal film layer
Layer, and on silicon nitride film layer, output the first contact hole running through silicon nitride film；
Step 5, deposits the second metal film layer with physical vaporous deposition, at the first contact hole on silicon nitride film layer
Interior filling contact, contact connects the first metal film layer and the second metal film layer, and carries out the second metal film layer
Photoetching and dry etching；
Step 6, deposits the 3rd metal film layer with physical vaporous deposition on the second metal film layer, and to the 3rd
Metal film layer carries out photoetching and dry etching；
Step 7, deposits the second silicon oxide by plasma enhanced chemical vapor deposition method thin on the 3rd metal film layer
Film layer；
Step 8, coating photoresist on the second silicon oxide film layer, and output on a photoresist and run through the second of photoresist
Contact hole；
Step 9, utilizes dry or wet etch to be positioned at the second oxidation corresponding with the second contact hole below the second contact hole
Silicon membrane layer；
Step 10, on a photoresist and the interior physical vaporous deposition of the second contact hole deposits metallic oxide film；
Step 11, removes photoresist；
Step 12, carries out vacuum bakeout to whole device；
Step 13, carries out photoetching to the second silicon oxide film layer, outputs and run through the second oxidation on silica membrane layer
3rd contact hole of silicon membrane layer；
Step 14, one end of connecting line is stretched in the 3rd contact hole, and one end of connecting line is connected with the 3rd metal film layer.
Preferably, the thickness of the first silicon oxide film layer is 200 nanometers～2 microns.
Preferably, the thickness of the first metal film layer is 200 nanometers～1 micron, and the material of the first metal film layer is gold
Belong to tungsten or tungsten-titanium alloy.
Preferably, the thickness of silicon nitride film layer is 10 nanometers～200 nanometers.
Preferably, the thickness of the second metal film layer is 100 nanometers～1 micron, and the material of the second metal film layer is gold
Belong to tungsten or tungsten-titanium alloy.
Preferably, the thickness of the 3rd metal film layer is 200 nanometers～3 microns, and the material of the 3rd metal film layer is gold
Belong to tungsten or tungsten-titanium alloy.
Preferably, the thickness of the second silicon oxide film layer is 100 nanometers～500 nanometers.
Preferably, the thickness of metallic oxide film is 100 nanometers～800 nanometers.
Preferably, the temperature of baking is 300 DEG C～500 DEG C, and the time of baking is 10 minutes～4 hours.
A kind of sensor, described sensor uses manufacturer's legal system of the sensor by metal-oxide detected gas
Make.
Compared with prior art, beneficial effects of the present invention is as follows: can be the film heating resistance of nanometer scale, thin film
Heat sink and thin-film metallic oxide gas sensing resistance are made on silicon chip simultaneously, quick by being applied to heat the pulse of film resistor
Metal-oxide gas sensing resistance near heating, encourages the resistance of this oxide to change, then fast further through heat radiation thin film
Quickly cooling but this resistance, makes resistance value recover initial value, forms resistance value pulse signal.The shape of this resistance value pulse signal, amplitude,
Response characteristic is affected by its environmental gas.Can accurately detect composition and the concentration of environmental gas.The method uses integrated electricity
Standard technology in the manufacture of road, it is to avoid use unconventional MEMS technology, therefore can reduce manufacturing cost, reduces the body of product
Amass and power consumption, increase reliability and concordance, improve sensitivity and the precision of product.
Accompanying drawing explanation
The detailed description with reference to the following drawings, non-limiting example made by reading, the further feature mesh of the present invention
And advantage will become more apparent upon.
Fig. 1 is the manufacture method schematic diagram one that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 2 is the manufacture method schematic diagram two that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 3 is the manufacture method schematic diagram three that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 4 is the manufacture method schematic diagram four that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 5 is the manufacture method schematic diagram five that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 6 is the manufacture method schematic diagram six that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 7 is the manufacture method schematic diagram seven that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 8 is the manufacture method schematic diagram eight that the present invention passes through the sensor of metal-oxide detected gas；
Fig. 9 is the manufacture method schematic diagram nine that the present invention passes through the sensor of metal-oxide detected gas；
Figure 10 is the manufacture method schematic diagram ten that the present invention passes through the sensor of metal-oxide detected gas；
Figure 11 is the manufacture method schematic diagram 11 that the present invention passes through the sensor of metal-oxide detected gas；
Figure 12 is the manufacture method schematic diagram 12 that the present invention passes through the sensor of metal-oxide detected gas；
Figure 13 is the structural representation one that the present invention passes through the sensor of metal-oxide detected gas；
Figure 14 is the structural representation two that the present invention passes through the sensor of metal-oxide detected gas；
Figure 15 is the structural representation three that the present invention passes through the sensor of metal-oxide detected gas；
Figure 16 is the schematic diagram that the present invention passes through the sensor of metal-oxide detected gas；
Figure 17 is the signal graph that the present invention passes through the sensor of metal-oxide detected gas.
In figure:
1-silicon chip 2-the first silicon oxide film layer 3-the first metal film layer
4-silicon nitride film layer 5-the second metal film layer 6-the 3rd metal film layer
7-the first contact hole 8-third layer metallic pattern 9-second layer metal figure
10-the second silicon oxide film layer 11-photoresist 12-the second contact hole
13-metallic oxide film 14-the 3rd contact hole 15-connecting line
16-contact
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in the technology of this area
Personnel are further appreciated by the present invention, but limit the present invention the most in any form.It should be pointed out that, the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, it is also possible to make some changes and improvements.These broadly fall into the present invention
Protection domain.
Step 1: use the industrial silicon chip of standard semiconductor 1, can be 6 inches, 8 inches or 12 inch silicon wafer 1, Ke Yishi
P-shaped, it is also possible to be N shape.
Step 2: depositing the first silicon oxide film layer 2 by the method for semiconductor technology PECVD of standard, thickness is received 200
Rice is between 2 microns.
Step 3: deposit the first metallic film by the method for standard semi-conductor processes PVD on the first silicon oxide film layer 2
Layer 3, thickness is between 200 nanometers to 1 micron, and material can be tungsten, or tungsten-titanium alloy, or other refractory metal.
Step 4: do photoetching for the first time.
Step 5: do dry etching for the first time, the first metal film layer 3 is carved heating resistor layer figure.This figure is at electricity
Resistance region or heating region can be strips, it is also possible to be simple wall scroll shape.First metal film layer 3 is in non-resistive region
Or non-heated region area is relatively big, and with top layer the second metal film layer 5, the 3rd metal film layer 6 connects, and plays heat radiation merit
Energy.When heating driving pulse and applying, resistance region resistance is brought rapidly up more greatly.After heating driving pulse disappears, heat leads to
The metal crossing peripheral non-resistive region distributes rapidly, makes temperature recover room temperature as early as possible.
Step 6: depositing one layer of silicon nitride film layer 4 on the first metal film layer 3 with standard PECVD process, thickness exists
Between 10 nanometers to 200 nanometers.The thickness of this thin film is thin enough, strengthens heats.
Step 7: do second time photoetching.
Step 8: with standard semiconductor dry etching silicon nitride thin layer 4, output the first contact hole 7.First contact hole 7
Following.First metal film layer 3 comes out.
Step 9: depositing the second metal film layer 5 by the method for PVD on silicon nitride film layer 4, thickness is in 100 nanometers extremely
Between 1 micron, in the place having the first contact hole 7, contact 16 fills the first contact hole 7, and with its bottom the first metal
Thin layer 3 connects, and the material of the second metal film layer 5 and contact 16 can be tungsten, or tungsten-titanium alloy, or other resistance to height
Temperature metal.
Step 10: deposit the 3rd metal film layer 6 with standard semiconductor PVD on the second metal film layer 5 is thick
Degree is between 200 nanometers to 3 micron, and material can be metallic aluminium, or aluminium copper.3rd metal film layer 6 is completely covered
The second following metal film layer 5, and in electricity meaning, connect the second metal film layer 5.When applying heating pumping signal,
Second metal film layer 5, the 3rd metal film layer 6 plays the effect of low-resistance line so that adds thermal resistance and obtains major part energy,
And be rapidly heated.
Step 11: do third time photoetching.
Step 12: use standard semiconductor dry etching, etches third layer metallic pattern 8 the 3rd metal film layer 6, carves
Erosion stops on the second metal film layer 5.So etching needs that the second metal film layer 5 is had preferable selectivity.
Step 13: do four mask.
Step 14: use standard semiconductor dry etching, etches second layer metal figure 9 the second metal film layer 5, carves
Erosion stops on silicon nitride film layer 4.Portion of second layer metal 5 and whole third layer metal 6 are exposed out.Second layer metal figure
Shape 9 can be interdigitated, it is also possible to be simple figure.Left right graphic is not connected to, will be respectively as subsequent metal oxide
The two end electrodes of resistance.
Step 15: deposit on the second metal film layer 5 and the 3rd metal film layer 6 by standard semiconductor PECVD method
Second silicon oxide film layer 10, thickness is between 50 nanometers to 500 nanometers.This second silicon oxide film layer 10 is completely covered the 3rd
Metal film layer 6, prevents in metal application afterwards by environmental attack as passivation protection layer, improves the reliability of device.
Step 16: coating photoresist 11, does the 5th photoetching, makes the second contact hole 12.
Step 17: utilize standard semiconductor dry or wet technique, etches the second silicon oxide under the second contact hole 12 thin
Film layer 10, prepares for follow-up metal-oxide deposit and stripping technology.Photoresist 11 thickness 500 nanometers to 2 micron it
Between.Etching stopping is on silicon nitride film layer 4.
Step 18: with the method deposit metallic oxide film 13 of PVD on photoresist 11, thickness is in 100 nanometers
Between 800 nanometers, material can be SnO2, ZnO, TiO2Deng gas sensitive, or through Fe, the element such as Zn, Pt, Pd mixes
This type of gas sensitive.
Step 19 uses solvent that photoresist 11 is removed, and the gas-sensitive metal oxide film layer 13 stayed covers second and connects
Contact hole 12, forms a gas sensing resistance, and the two ends of gas sensing resistance connect the two poles of the earth of the second metal film layer 5, are then connected to
3rd metal film layer 6.
Step 20: do vacuum bakeout at a certain temperature, makes metallic oxide film 13 crystallization be formed required stable
The gas sensing resistance of characteristic.Baking temperature is between 300 DEG C to 500 DEG C, and the time is between 10 minutes to 4 hours.During baking, the
Three metal film layers 6 are by the protection of the second silicon oxide film layer 10.
Step 21: do the 6th photoetching.
Step 22: with standard semiconductor dry etching the second silicon oxide film layer 10, obtain the 3rd contact hole 14, the 3rd gold medal
Belong to thin layer 6 to come out.Two electrodes of the corresponding gas sensing resistance of the 3rd contact hole 14 and two electrodes of metal heating thin films.
Step 23: use the two ends electricity of the standard metal copper of semiconductor-sealing-purpose or 15 gas sensing resistances of connecting line of gold solder
Pole, and micro metal adds the two end electrodes of thermal resistance and is connected in encapsulation, whole four end sensor devices complete.
Rh be equivalence add thermal resistance, Rg be equivalent gas sensing resistance.This structure is when connecting upper suitable outer meeting resistance R and fitting
When supply voltage Vdd after, output voltage Vg reflection gas sensing resistance resistance.Vh is applied to add the pulse voltage of thermal resistance
Signal.Vh, as a pumping signal, when applying a short pulse and rushing, adds thermal resistance and generates heat rapidly.Because of gas sensing resistance thereon
Face, centre is only separated by the thinnest silicon nitride film layer 4, therefore gas sensing resistance also follows intensification.Along with temperature raises, absorption is at gas
The negative oxygen ion on sensitized metal oxide resistor surface increases sharply, and oxide surface formed depletion layer so that it is resistivity with
Temperature rises and rises.After the driving voltage pulse of heating metallic resistance disappears, temperature declines, and the negative oxygen ion of absorption subtracts
Few, the resistivity of gas-sensitive metal oxide recovers initial value.Therefore, Vh may be considered driving source, and Vg (Rg) is as response impulse.
When the amplitude of pumping signal and time are fixed, if air is pure without other harmful gass, the amplitude of this response impulse
It is fixing with shape.The figure referred to such as the A in Figure 17.
But, when in air containing a certain amount of reducibility gas, such as CO, H2Volatile organic matter gas with other
Such as ethanol etc., negative oxygen ion lowers at the absorbability of gas-sensitive metal oxide, and depletion layer reduces so that gas sensing resistance is with temperature
The amplitude risen reduces, and the peak value of response signal Vg (Rg) diminishes, and the shape of signal changes.As the B in Figure 17 refers to
Figure.
On the contrary, when in air containing a certain amount of oxidizing gas, such as NO2, negative oxygen ion is at gas-sensitive metal oxide
Absorbability strengthen, depletion layer increases so that the amplitude that gas sensing resistance rises with temperature also increases, and responds signal Vg (Rg)
Peak value becomes big, and signal shape changes.The figure referred to such as the C in Figure 17.
By responding the change of signal Vg (Rg) with the methods analyst of software, the signal of contrast pure air, can be accurate
The composition of detection environmental gas and concentration.
It addition, it is relatively big at non-heated region area to add thermal resistance, thermolysis can be played.When heating pulse disappear with
After, the heat adding thermal resistance is distributed rapidly by the metal in non-heated region so that the temperature of gas sensing resistance comparatively fast recovers room temperature,
Then second time pulse excitation can be carried out.By the test of repeatedly Challenge-response, gained information can eliminate noise, improves
The precision measured and concordance.
Present invention also offers what a kind of employing was manufactured by the manufacture method of the sensor of metal-oxide detected gas
Sensor.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make a variety of changes within the scope of the claims or revise, this not shadow
Ring the flesh and blood of the present invention.In the case of not conflicting, the feature in embodiments herein and embodiment can any phase
Combination mutually.
Claims (10)
1. the manufacture method by the sensor of metal-oxide detected gas, it is characterised in that comprise the steps:
Step 1, deposits the first silicon oxide film layer by plasma enhanced chemical vapor deposition method in silicon chip substrate；
Step 2, utilizes physical vaporous deposition to deposit the first metal film layer on the first silicon oxide film layer；
Step 3, carries out dry etching to the first metal film layer, carves heating resistor layer figure on the first metal film layer；
Step 4, utilizes plasma enhanced chemical vapor deposition method deposition silicon nitride film layer on the first metal film layer, and
Silicon nitride film layer is outputed the first contact hole running through silicon nitride film；
Step 5, deposits the second metal film layer with physical vaporous deposition on silicon nitride film layer, fills out in the first contact hole
Filling contact, contact connects the first metal film layer and the second metal film layer, and the second metal film layer is carried out photoetching
And dry etching；
Step 6, deposits the 3rd metal film layer with physical vaporous deposition on the second metal film layer, and to the 3rd metal
Thin layer carries out photoetching and dry etching；
Step 7, deposits the second silicon oxide film layer by plasma enhanced chemical vapor deposition method on the 3rd metal film layer；
Step 8, coating photoresist on the second silicon oxide film layer, and output the second contact running through photoresist on a photoresist
Hole；
Step 9, utilizes dry or wet etch to be positioned at the second silicon oxide corresponding with the second contact hole below the second contact hole thin
Film layer；
Step 10, on a photoresist and the interior physical vaporous deposition of the second contact hole deposits metallic oxide film；
Step 11, removes photoresist；
Step 12, carries out vacuum bakeout to whole device；
Step 13, carries out photoetching to the second silicon oxide film layer, outputs that to run through the second silicon oxide thin on silica membrane layer
3rd contact hole of film layer；
Step 14, one end of connecting line is stretched in the 3rd contact hole, and one end of connecting line is connected with the 3rd metal film layer.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of the first silicon oxide film layer is 200 nanometers～2 microns.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of the first metal film layer is 200 nanometers～1 micron, and the material of the first metal film layer is tungsten or tungsten-titanium alloy.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of silicon nitride film layer is 10 nanometers～200 nanometers.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of the second metal film layer is 100 nanometers～1 micron, and the material of the second metal film layer is tungsten or tungsten-titanium alloy.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of the 3rd metal film layer is 200 nanometers～3 microns, and the material of the 3rd metal film layer is tungsten or tungsten-titanium alloy.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of the second silicon oxide film layer is 100 nanometers～500 nanometers.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The thickness of metallic oxide film is 100 nanometers～800 nanometers.
The manufacture method of the sensor by metal-oxide detected gas the most according to claim 1, it is characterised in that
The temperature of baking is 300 DEG C～500 DEG C, and the time of baking is 10 minutes～4 hours.
10. a sensor, it is characterised in that described sensor uses and passes through metal described in claim 1 to 9 any one
The manufacture method manufacture of the sensor of oxide detected gas.
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