CN106098582B - On-chip capacitor standard for calibration and method of making the same - Google Patents
On-chip capacitor standard for calibration and method of making the same Download PDFInfo
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- CN106098582B CN106098582B CN201610628267.4A CN201610628267A CN106098582B CN 106098582 B CN106098582 B CN 106098582B CN 201610628267 A CN201610628267 A CN 201610628267A CN 106098582 B CN106098582 B CN 106098582B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
本发明公开了一种校准用在片电容标准件及其制备方法，涉及测试用计量装置技术领域。所述标准件包括绝缘衬底，所述绝缘衬底的上表面设有若干个电容值不同的标准电容和一个标准开路器。本发明所述在片电容标准件，可以实现对整体校准MEMS晶圆片测量系统在片电容参数的整体计量校准，实现量值溯源，确保MEMS生产过程中的晶圆片级测量结果准确、一致。该标准件能够提供具有溯源性的电容值（1pF～100pF，测试频率1kHz～100kHz），可以根据需要在上述量值范围内进行设计。
The invention discloses a chip capacitor standard part used for calibration and a preparation method thereof, and relates to the technical field of measuring devices for testing. The standard part includes an insulating substrate, and the upper surface of the insulating substrate is provided with several standard capacitors with different capacitance values and a standard open circuit. The on-chip capacitance standard component of the invention can realize the overall measurement and calibration of the on-chip capacitance parameters of the overall calibration of the MEMS wafer measurement system, realize the traceability of the quantity value, and ensure that the wafer-level measurement results in the MEMS production process are accurate and consistent. . This standard part can provide traceable capacitance values (1pF~100pF, test frequency 1kHz~100kHz), and can be designed within the above-mentioned value range as required.
Description
Technical field
The present invention relates to test with metering engineering device technique field more particularly to it is a kind of calibration be used in chip capacitor standard component and its
Preparation method.
Background technique
MEMS wafer chip test system is each MEMS development and production unit for batch, quickly test chip features parameter,
The special test equipment evaluated chip performance, reject unqualified chip is mainly used for testing the plates capacitance value (electricity of MEMS device
Hold parameter) characteristic, accurately measure these parameters for guaranteeing MEMS product accurately and reliably and to ensure that yield rate has extremely heavy
The meaning wanted.
The typical structure of MEMS wafer chip test system is as shown in Figure 1, by capacitance measuring instrument, matrix switch, power supply mould
Block, probe station system are constituted.Wherein, probe station system mainly includes connection cables, the portions such as probe station, probe card (or probe base)
Part.
The purpose of capacitance measurement be by measurement comb teeth capacitor in fix the small electric capacitance between tooth or movable teeth,
According to electrical parameter and then corresponding physical parameter such as acceleration value is derived, to complete the design work of accelerometer.Therefore,
The accurate measurement of capacitance parameter is especially significant to the quality of final products to wafer.
Below by taking the wafer built-in testing of MEMS capacitance accelerometer product as an example, capacitance parameter test process and its important
Property.Typical MEMS capacitance accelerometer structure is as shown in Fig. 2, be comb structure.I.e. sensing element is a bilateral comb structure,
The variation (such as extraneous acceleration) of extraneous non electrical quantity can be converted into the variation of capacitance by fixed tooth and movable teeth, for accelerating
The measurement of the physical quantitys such as degree.Mass block is H-type, and mass block is fixed on horizontal direction, mass block by four thin beams (such as a, b two o'clock)
With the variation of extraneous acceleration along horizontal direction free movement.Movable teeth is stretched out from mass block to two sides, (such as with fixed tooth
C, d two o'clock) form two electrodes of capacitor, several groups electrode is interconnected, form differential detection electrode, thus measure it is extraneous plus
The variation of speed signal.
In Theoretical Design, the value of comb teeth capacitor is by design, and the chip that actual processing comes out wishes that capacitance is most
Amount meets design value.The final response of accelerometer product is directly related to capacitance, therefore in order to obtain the spy of accelerometer
Property, it is necessary between the fixed tooth of precise measurement, between movable teeth, or the capacitance between fixed tooth and movable teeth.In view of
MEMS wafer chip test system capacitance parameter accuracy needs to carry out such system whole meter to the significance of product quality
Amount calibration, also avoids in this way due to quasi-instrument each in frequent disassembling system (such as matrix switch, LCR measuring instrument, power module)
The inconsistent situation of the systematic entirety energy that may cause, traces to the source to realize in the entirety of chip capacitor magnitude, it is ensured that magnitude is quasi-
Really, the smooth development for unanimously, ensureing the road Liao Qian process procedure and rear road test encapsulation link, avoids the waste of packaging cost,
Improve production efficiency.
Technological means and product that the country is disclosed cannot achieve the metering to MEMS wafer chip test system capacitor
Calibration, the calibration program that instrument producer takes is to calibrate the composition instrument separate unit of system, and separate unit instrument accurately cannot
Guarantee the accurate of probe end face, this is because influence amount of the measurement result of probe end face by outside electromagnetic interference and probe system
It is larger, it can not be eliminated in this way due to lead, probe card, probe station bring influence amount；MEMS producer makees frequently with test product
To verify part, the drawbacks of this way is the long-time stability that operator does not have means to guarantee verifying part, moreover is unable to measure it
Accuracy.Above two means second is that not can guarantee its accuracy, therefore cannot achieve electricity first is that probe end face can not be calibrated to
Hold parameter to trace to the source, is unable to reach that magnitude is accurate, consistent purpose.
The relevant report in piece standard component of link is surveyed in the document needleless centering of the open report of foreign countries.NIST only to MEMS most
Five in one reference standard substance applied by the test macro of finished product (such as mems accelerometer, MEMS gyroscope etc.)
(RM8096 has carried out related elaboration to RM8097) and has sold as product.Such standard substance can measure the eight of MEMS product
Big technical characteristic (Young's modulus, step height, overstrain, strain gradient, plane length, residual stress, stress gradient, cross
Cantilever thickness).But these parameters are the characterisitic parameters of final products, rather than " middle survey link " wafer mentioned by this paper is surveyed
Needed for the examination stage.
To sum up, the standard sample of photo or standard substance of existing public technology and commercialization can not solve the survey of MEMS wafer piece
Piece calibration problem of the test system in piece D.C. resistance, capacitance parameter.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of calibrations to be used in chip capacitor standard component and preparation method thereof, institute
Stating standard component can solve in chip capacitor parameter in piece calibration problem, realize common MEMS wafer built-in testing in MEMS technology
The tracing to the source in chip capacitor parameter of system, it is ensured that magnitude is accurate, consistent.
In order to solve the above technical problems, the technical solution used in the present invention is: it is a kind of calibration be used in chip capacitor standard component,
It is characterized by comprising insulating substrate, the upper surface of the insulating substrate be equipped with the different standard capacitance of several capacitances and
One standard open device.
A further technical solution lies in: it include substrate described in the standard capacitance, the substrate is equipped with comb teeth capacitor,
The comb teeth capacitor includes the discrete capacitor that several are connected in parallel, and wherein the cathode of comb teeth capacitor is located at the interior of two row capacitors
Side, and set on the cathode of capacitor there are two negative plate, the anode of the capacitor is located at the outside of two row capacitors, and the anode of capacitor
On set there are two positive plate, one column of pole plate setting, and positive plate is located at the rear side of the standard capacitance, the negative plate position
In the front side of the standard capacitance, ground connection pole plate, two positive plates and two are equipped with the substrate of the pole plate one column
A negative plate realizes the measurement to the standard capacitance, two positive plates therein are respectively used to for connecting with LCR measuring instrument
Connect the I of LCR measuring instrumentHEnd and PHEnd, two negative plates are respectively used to the I of connection LCR measuring instrumentLEnd and PLEnd.
Further include a further technical solution lies in: the standard capacitance and the anode plate, negative plates and connects
The reserved pole plate of symmetrical five discrete first of ground pole plate.
A further technical solution lies in: the distance between two electrodes in the same side are 200 μm -400 μm, horizontal direction two
The distance between a electrode is 9mm-11mm.
A further technical solution lies in: the standard open device includes substrate, and the left or right side of the substrate is equipped with
One column five-element's pole plate, wherein two the first pole plates for being located at rear side are used to connect by metal lead wire with the anode of comb teeth capacitor,
Two intermediate the second pole plates are used to connect by metal lead wire with the cathode of comb teeth capacitor, and most a third pole plate of front side is used
In ground connection.
A further technical solution lies in: with described first to the symmetrical other side of third electrode plate set there are five point
The reserved pole plate of vertical second.
A further technical solution lies in: there are three the standard capacitance is set, capacitance is respectively 1pF, 10pF and 100pF.
The invention also discloses a kind of calibrations to be used in chip capacitor standard component preparation method, it is characterised in that including walking as follows
It is rapid:
1) capacitor and open device are prepared respectively on two wafers, one of wafer includes that several differences are held
The capacitor of value includes several open devices on another wafer；
2) scribing processing is carried out to wafer, several discrete capacitors and open device is formed, using MEMS chip disk
Grade packaging technology is packaged discrete capacitor；
3) discrete capacitor and open device are tested using LCR measuring instrument, select satisfactory capacitor and opened
Road device is as standard capacitance and standard open device；
4) standard capacitance and standard open device are adhered on quartz wedge as carrier using quartz wedge, form capacitor mark
Quasi- part.
A further technical solution lies in: the method for preparing capacitor on a wafer is as follows:
1) mark, dicing lane preparation are completed on a wafer；
2) preparation of corrosion window is completed by photoetching, etching；
3) metal line is completed by photoetching, metallization process；
4) bonding block preparation is completed by photoetching, etching technics；
5) preparation of comb teeth capacitance structure is completed by photoetching, etching technics；
6) the structured bonding of institute is completed；
7) production that probe test window is completed by photoetching, etching technics, exposes pole plate.
A further technical solution lies in: the comb teeth capacitor the preparation method is as follows:
1) by introducing one layer of buries oxide layer between top layer silicon and backing bottom, soi structure is prepared；
2) mask layer is done with photoresist, using ICP deep etching method by lower layer's silicon base partial etching of soi structure
Fall；
3) intermediate etch of silicon dioxide layer is fallen using RIE reactive ion etching method；
4) layer of metal film is sputtered to overcome Nothing effect in the position of above-mentioned silica using sputtering technology:
5) layer photoresist is applied in the top layer silicon of soi structure, and is carried out photoetching making and gone out dentation figure；
6) required quality block graphics is etched using ICP deep etching method；
7) Metallic film corrosion among soi structure is fallen using caustic solution；
8) the uppermost photoresist of soi structure is removed using caustic solution, dispensing device structure.
The beneficial effects of adopting the technical scheme are that of the present invention in chip capacitor standard component, Ke Yishi
Magnitude tracing now is realized in the whole measurement and calibration of chip capacitor parameter to piece calibration MEMS wafer piece measuring system, it is ensured that
Wafer chip level measurement result in MEMS production process is accurate, consistent.The standard component is capable of providing the capacitance with traceability
(1pF~100pF, test frequency 1kHz~100kHz), can according to need and be designed within the scope of above-mentioned magnitude.The standard
Part uses MEMS chip wafer level packaging, so that standard component is not influenced by factors such as extraneous dust, temperature and humidity, electromagnetic interferences,
With good repeatability and long-time stability.
Detailed description of the invention
Fig. 1 is typically in MEMS wafer chip test system structural schematic diagram；
Fig. 2 is typical capacitance accelerometer structural schematic diagram；
Fig. 3 is the schematic illustration of comb teeth capacitor；
Fig. 4 is photolithography edition territory design diagram；
Fig. 5 is the preparation flow figure of standard capacitance described in the embodiment of the present invention；
Fig. 6 a- Fig. 6 h is the preparation figure of comb teeth capacitor；
Fig. 7 is the structural schematic diagram of standard capacitance described in the embodiment of the present invention；
Fig. 8 is the structural schematic diagram of standard open device described in the embodiment of the present invention；
Fig. 9 is capacitor calibration process connection schematic diagram；
Figure 10 is the structural schematic diagram of standard component described in the embodiment of the present invention；
Wherein: 1, mass block 2, fixed tooth 3, movable teeth 4, positive plate 5, negative plate 6, comb teeth capacitor 7, probe are surveyed
Try window 8, corrosion window 9, capacitance structure 10, metal line 11, dicing lane
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 10, the invention discloses a kind of calibrations to be used in chip capacitor standard component, including insulating substrate, the insulation
The upper surface of substrate is equipped with the different standard capacitances and a standard open device of several capacitances, in the present embodiment the mark
There are three pseudo-capacitance is set, capacitance is respectively 1pF, 10pF and 100pF, it should be pointed out that the capacitance of standard capacitance is not limited to
In the above-mentioned type, those skilled in the art can select and be arranged according to actual needs.
In one embodiment of the invention, as shown in fig. 7, including substrate described in the standard capacitance, on the substrate
Equipped with comb teeth capacitor, the comb teeth capacitor includes the discrete capacitor that several are connected in parallel, and wherein the cathode of comb teeth capacitor is located at
The inside of two row capacitors, and set on the cathode of capacitor there are two negative plate, the anode of the capacitor is located at the outside of two row capacitors,
And set on the anode of capacitor there are two positive plate, a column are arranged in the pole plate, and positive plate is located at the rear side of the standard capacitance,
The negative plate is located at the front side of the standard capacitance, is equipped with the substrate of the pole plate one column and is grounded pole plate, and described two
A positive plate and two negative plates realize the measurement to the standard capacitance, two therein just for connecting with LCR measuring instrument
Pole plate is respectively used to the I of connection LCR measuring instrumentHEnd and PHEnd, two negative plates are respectively used to the I of connection LCR measuring instrumentLEnd and
PLEnd.
Further for later extended method, the standard capacitance further include with the anode plate, negative plates with
And the ground connection reserved pole plate of symmetrical five discrete first of pole plate.
In one embodiment of the invention, as shown in figure 8, the standard open device includes substrate, a left side for the substrate
Side or right side are equipped with column five-element's pole plate, wherein two the first pole plates for being located at rear side are used for through metal lead wire and comb teeth capacitor
Anode connection, two intermediate the second pole plates are used to connect with the cathode of comb teeth capacitor by metal lead wire, most on front side of one
A third pole plate is set pre- there are five discrete second for being grounded with described first to the symmetrical other side of third electrode plate
Stay pole plate.
The invention also discloses a kind of calibrations to be used in chip capacitor standard component preparation method, includes the following steps:
1) capacitor and open device are prepared respectively on two wafers, one of wafer includes that several differences are held
The capacitor of value includes several open devices on another wafer；
2) scribing processing is carried out to wafer, several discrete capacitors and open device is formed, using MEMS chip disk
Grade packaging technology is packaged discrete capacitor；
3) discrete capacitor and open device are tested using LCR measuring instrument, select satisfactory capacitor and opened
Road device is as standard capacitance and standard open device；
4) standard capacitance and standard open device are adhered on quartz wedge as carrier using quartz wedge, form capacitor mark
Quasi- part.
The above structure is illustrated below with reference to specific theory:
The comb teeth capacitor that the present invention makes is designed using the structure of N group capacitor parallel connection, as shown in Figure 3.This structure can be with
In a limited space in, the lesser capacitor of several polar plate areas is together in parallel and forms biggish capacitor, so as to obtain compared with
Big capacitance and resolving power.
According to plate capacitors calculation formula:
(wherein ε: the dielectric constant of medium；L: the width of pole plate: h: the height of pole plate；D: the spacing of pole plate；N: capacitor
Group number).The medium that the present invention uses, by fixed ε, l, h and d value, adjusts the number of N, that is, changes shunt capacitance for air
Group number, to reach target capacitance preparation.
In order to realize the preparation of standard capacitance, substrate material selects monocrystalline silicon, and main cause has 6 aspects: a) mechanical property
It can stablize, and can be integrated on the electronic device of same substrate；B) silicon is almost an ideal structural material, it has
Almost Young's modulus identical with steel, but it is light as aluminium；C) light weight of silicon materials, density are the 1/3 of stainless steel, and curved
Qu Qiangdu is but 3.5 times of stainless steel, it has high strength to density ratio and high rigidity density ratio；D) its fusing point is 1400
DEG C, about twice of aluminium；E) smaller than steel times of its thermal expansion coefficient is 10 times smaller than aluminium；F) monocrystalline silicon has excellent machinery, object
Rationality matter, mechanical quality factor may be up to 106 orders of magnitude, and lag and creep are minimum, and almost nil, good mechanical stability is
The material of ideal sensor and actuator.Therefore, silicon substrate has greater flexibility in designing and manufacturing, as capacitor
The substrate of standard sample of photo.
Standard capacitance has carried out layout design, as shown in Figure 4.One is divided into 6 steps: 1) mark, dicing lane preparation, position
In the outermost dicing lane of chip, primarily to capacitor disk is cut into junior unit one by one and prepares after completing
's；2) corrosion window is opened, it is all that structured window is needed to require to etch structure and morphology by the means of dry etching
Come；3) prepared by metal line, and the region that institute's some need walks signal in domain requires practical metal Au and carries out metal line, such as
The line of the anode of capacitor, the cathode of capacitor and the two and probe test window PAD；4): bonding block preparation, the present invention use
Compound bonding in " Au-Si bonding " technology, principle is to utilize the mutual low-melting feature of gold silicon；5): capacitance structure preparation, ash
The region of color is the comb structure of capacitor, is formed in parallel by the tooth of several high-aspect-ratios；6): probe test window system
It is standby, positioned at each side 5 PAD of chip, design during PAD production using the coupling reaction in dry etching
Plasma etching, integrated artistic process are as shown in Figure 5.
Wherein, the preparation method of comb teeth capacitor is crucial, using the technique as shown in Fig. 6 a-6h, is included the following steps: 1)
ICP body silicon etching is carried out in the lower layer of SOI device structure；2) RIE etching is carried out to silicon dioxide layer；3) metal film sputters: 4)
Photoetching on silicon fiml；5) ICP mass block etches；6) Metallic film corrosion；7) device architecture discharges.
By the calculation formula of capacitor model, according to process flow, it then follows layout design principle, it is real on 6 cun of Si disks
The preparation of tri- capacitances of 1pF, 10pF, 100pF is showed, and has carried out distribution design, it is therefore intended that from a series of products
Print that is repeated, having good stability is filtered out as final standard component.The overall construction design of chip is as shown in Figure 7.
Wherein left side is, with comb teeth capacitance connection, external to be used as calibrating terminal, first four are as test lead inside 5 PAD
Mouth is connected to signal testing terminal with probe (or exploration card), and one PAD in bottom is as shell ground terminal；In the PAD of 5, right side
Portion is sky, is specially designed to cooperate the exploration card of symmetrical structure to use.
According to the typical sizes of MEMS product, PAD (electrode) spacing and size are designed: the same side PAD one by one
Vertical direction interval is about 300 μm, and the size between two PAD of horizontal direction is 10mm, and the specification of each PAD is (12.3*
4.1) μm, the width of outside dicing lane is 40 μm, and it is as shown in the table for detailed PAD coordinate position.
The position table 1-PAD respective coordinates
| Position | X(μm) | Y(μm) | Position | X(μm) | Y(μm) |
| A | 1320 | 1565 | A’ | -8680 | 1565 |
| B | 1320 | 930 | B’ | -8680 | 930 |
| C | 1320 | 330 | C’ | -8680 | 330 |
| D | 1320 | -330 | D’ | -8680 | -330 |
| E | 1320 | -930 | E’ | -8680 | -930 |
According to the typical wafer chip layout of MEMS product, 3 pre-designed standard components are subjected to distribution row on a wafer
Column, are laid out according to the principle of 1pF (3 row), 10pF (2 row), 100pF (2 row), have arranged altogether 4 groups, and total about 230~250
A chip.
The present invention is designed is in the main purpose of piece open device, eliminate all leads except comb teeth capacitor core devices,
The factors brings such as PAD, test cable, probe system influence, the capacitance of the print of accurate definition design.Mentality of designing be
On the basis of original layout design, the part of output capacitance is removed, it is other to remain unchanged, as shown in Figure 8.
Encapsulation is the mode and processing method for protecting chip using certain material, and being isolated from the outside.Encapsulation
Effect: there is protection and buffer action；Suitable outer lead structure is provided for chip；Heat dissipation and electromagnetic shielding item are provided for chip
Part；Improve the mechanical strength of chip and the ability of resistance to external shocks.
MEMS device is wanted and is tested between environment and forms a contact interface and obtain non-electrical signal, and external environment is to spirit
It is all ability very harsh, that it will have receiving various aspects environment to influence for the high MEMS sensing element of sensitivity, such as
Mechanical (stress is swung, impact etc.), (gas, temperature, the corrosive medium etc.) of chemistry, physics (temperature, pressure, acceleration
Deng) etc..Since MEMS device all includes mobilizable element, since MEMS device is small in size, it is special all to use
Technology and encapsulation.Standard capacitance in the present invention takes the design scheme of wafer-level packaging.It is suspended with adapting to it, movable structure
Particularity, prevent it to be damaged, adhere to moisture, dust, achieve the purpose that avoid failure.
Follow parameter designing and according to layout design, by related process process, realized on 6 cun of Si disks 1pF,
The preparation of tri- capacitances of 10pF, 100pF, and carried out distribution design, it is therefore intended that weight is filtered out from a series of products
Renaturation, the print having good stability are as final standard component.
Using capacitor the four lines measuring method when robot scaling equipment is calibrated, specific connection is as shown in Figure 9.It is filled using calibration
Set and the data examined for the first time screened, select process deviation within 20% as standard component to be examined, to first sieve
The print that choosing is completed is examined, and is spaced examination in 3 months once, the standard component finally made is as shown in Figure 10.Using 40mm*
The quartz wedge of the 2mm thickness of 40mm passes through laser marking machine for information such as unit, title, number, capacitances as carrier on it
It can will be adhered on quartz wedge after capacitor, open device scribing above, wherein open device is the electricity of hereinbefore MEMS technology development
Hold open-circuit structure.Standard component repeatability is better than 0.05%, and year stability is better than 0.1%, calibrates accuracy 1%, can carry out
MEMS wafer chip test system works in piece piece calibration.
It is of the present invention in chip capacitor standard component, may be implemented to piece calibration MEMS wafer piece measuring system in chip capacitor
The whole measurement and calibration of parameter realizes magnitude tracing, it is ensured that wafer chip level measurement result in MEMS production process is accurate, one
It causes.The standard component is capable of providing the capacitance (1pF~100pF, test frequency 1kHz~100kHz) with traceability, Ke Yigen
It is designed within the scope of above-mentioned magnitude according to needs.The standard component use MEMS chip wafer level packaging so that standard component not by
The influence of the factors such as extraneous dust, temperature and humidity, electromagnetic interference has good repeatability and long-time stability.
Claims (9)
1. a kind of calibration is used in chip capacitor standard component, it is characterised in that: including insulating substrate, the upper surface of the insulating substrate is set
The standard capacitance for having several capacitances different and a standard open device, the standard capacitance include substrate, on the substrate
Equipped with comb teeth capacitor, the comb teeth capacitor includes the discrete capacitor that several are connected in parallel, and wherein the cathode of comb teeth capacitor is located at
The inside of two row capacitors, and set on the cathode of comb teeth capacitor there are two negative plate, the anode of the comb teeth capacitor is located at two rows electricity
The outside of appearance, and set on the anode of comb teeth capacitor there are two positive plate, described two negative plates and described two positive plates are arranged
One column, and positive plate is located at the rear side of the standard capacitance, the negative plate is located at the front side of the standard capacitance, with described two
The substrate that a negative plate and described two positive plates one arrange is equipped with ground connection pole plate, two positive plates and two negative plates
For connecting with LCR measuring instrument, the measurement to the standard capacitance is realized, two positive plates therein are respectively used to connection LCR
The I of measuring instrumentHEnd and PHEnd, two negative plates are respectively used to the I of connection LCR measuring instrumentLEnd and PLEnd.
2. calibration as described in claim 1 is used in chip capacitor standard component, it is characterised in that: the standard capacitance further includes and institute
State positive plate, negative plate and the ground connection reserved pole plate of symmetrical five discrete first of pole plate.
3. calibration as claimed in claim 2 is used in chip capacitor standard component, it is characterised in that: between the electrode of the same side two away from
From being 200 μm -400 μm, the distance between two electrodes of horizontal direction are 9mm-11mm.
4. calibration as described in claim 1 is used in chip capacitor standard component, it is characterised in that: the standard open device includes lining
Bottom, the left or right side of the substrate are equipped with column five-element's pole plate, wherein being located at two the first pole plates of rear side for passing through gold
Belong to lead to connect with the anode of comb teeth capacitor, two intermediate the second pole plates are used for the cathode by metal lead wire and comb teeth capacitor
Connection, most a third pole plate of front side is for being grounded.
5. calibration as claimed in claim 4 is used in chip capacitor standard component, it is characterised in that: with first pole plate, described the
Two pole plates and the symmetrical other side of third pole plate are set there are five the second discrete reserved pole plate.
6. calibration as described in claim 1 is used in chip capacitor standard component, it is characterised in that: there are three the standard capacitance is set,
Capacitance is respectively 1pF, 10pF and 100pF.
7. a kind of calibration is used in chip capacitor standard component preparation method, it is characterised in that include the following steps:
1) capacitor and open device are prepared respectively on two wafers, one of wafer includes several different capacitances
Capacitor includes several open devices on another wafer；
2) scribing processing is carried out to wafer, forms several discrete capacitors and open device, sealed using MEMS chip wafer level
Dress technique is packaged discrete capacitor；
3) discrete capacitor and open device are tested using LCR measuring instrument, selects satisfactory capacitor and open device
As standard capacitance and standard open device；
4) standard capacitance and standard open device are adhered on quartz wedge as carrier using quartz wedge, form capacity standard part.
8. calibration as claimed in claim 7 is used in chip capacitor standard component preparation method, which is characterized in that prepare on a wafer
The method of capacitor is as follows:
1) mark, dicing lane preparation are completed on a wafer；
2) preparation of corrosion window is completed by photoetching, etching；
3) metal line is completed by photoetching, metallization process；
4) bonding block preparation is completed by photoetching, etching technics；
5) preparation of comb teeth capacitance structure is completed by photoetching, etching technics；
6) the structured bonding of institute is completed；
7) production that probe test window is completed by photoetching, etching technics, exposes pole plate.
9. calibration as claimed in claim 8 is used in chip capacitor standard component preparation method, which is characterized in that the preparation of comb teeth capacitor
Method is as follows:
1) by introducing one layer of buries oxide layer between top layer silicon and backing bottom, soi structure is prepared；
2) mask layer is done with photoresist, is fallen lower layer's silicon base partial etching of soi structure using ICP deep etching method；
3) intermediate etch of silicon dioxide layer is fallen using RIE reactive ion etching method；
4) layer of metal film is sputtered to overcome Nothing effect in the position of above-mentioned silica using sputtering technology:
5) layer photoresist is applied in the top layer silicon of soi structure, and is carried out photoetching making and gone out dentation figure；
6) required quality block graphics is etched using ICP deep etching method；
7) Metallic film corrosion among soi structure is fallen using caustic solution；
8) the uppermost photoresist of soi structure is removed using caustic solution, dispensing device structure.
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| CN112098793B (en) * | 2020-08-14 | 2023-02-28 | 中国电子科技集团公司第十三研究所 | Method for determining single-port on-chip calibration piece model and terminal equipment |
| CN112666506A (en) * | 2020-12-10 | 2021-04-16 | 中国电子技术标准化研究院 | On-chip capacitor standard sample for integrated circuit calibration |
| CN112820714B (en) * | 2020-12-28 | 2022-12-13 | 中国电子科技集团公司第十三研究所 | Wafer-level capacitor standard sample and preparation method thereof |
| CN112820715B (en) * | 2020-12-28 | 2022-12-06 | 中国电子科技集团公司第十三研究所 | Wafer-level on-chip resistor standard sample wafer for calibration and preparation method thereof |
| CN113866511B (en) * | 2021-08-26 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | On-wafer capacitance measurement system and measurement method |
| CN116840566A (en) * | 2022-03-23 | 2023-10-03 | 长鑫存储技术有限公司 | Capacitance measuring method, system, device, electronic equipment and storage medium |
| TWI833526B (en) * | 2022-12-26 | 2024-02-21 | 致茂電子股份有限公司 | Correction system of measuring instrument and correction method of measuring instrument |
| CN116789073B (en) * | 2023-05-29 | 2025-08-26 | 杭州凯维力传感科技有限公司 | Self-calibrating SOI-based MEMS three-dimensional force sensor and its fabrication process |
| CN118625236B (en) * | 2024-05-20 | 2025-01-21 | 中国计量科学研究院 | An on-chip capacitance standard unit and its manufacturing method and linear value setting method |
| CN118382201B (en) * | 2024-06-03 | 2024-11-22 | 深圳市业展电子有限公司 | A multi-port electronic calibration device |
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