CN1060424C - Polishing disc for chemcal-mechanical polishing and making method - Google Patents
Polishing disc for chemcal-mechanical polishing and making method Download PDFInfo
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- CN1060424C CN1060424C CN 97116804 CN97116804A CN1060424C CN 1060424 C CN1060424 C CN 1060424C CN 97116804 CN97116804 CN 97116804 CN 97116804 A CN97116804 A CN 97116804A CN 1060424 C CN1060424 C CN 1060424C
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- 238000005498 polishing Methods 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 25
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052582 BN Inorganic materials 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000000748 compression moulding Methods 0.000 claims description 8
- 239000003082 abrasive agent Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000000806 elastomer Substances 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 29
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000004132 cross linking Methods 0.000 abstract description 6
- 238000006116 polymerization reaction Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 4
- 238000005187 foaming Methods 0.000 abstract description 3
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- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
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- 235000019580 granularity Nutrition 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000013519 translation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
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- 239000003637 basic solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The present invention discloses a polishing disc for chemical-mechanical polishing and a making method thereof. A hexagonal boron nitride ceramic material selected by the polishing disc is used as a polishing disc material. The structure of the polishing disc can be a single layer or a three-layer composite structure, and the shape of the polishing disc forms a circular disc shape or a circular ring shape. The making method is a sintering polymerization crosslinking method or a foaming polymerization crosslinking method. The combination performance of the polishing disc of the present invention is especially suitable for the polishing and the processing of integrated circuit silicon chips in semiconductor industry. The quality of a product is greatly improved, and the service life of the polishing disc is prolonged.
Description
The present invention relates to the polishing manufacture field of semiconductor device, specifically, relate to a kind of chemistry that is used for semiconductor device---the polishing disk and the manufacture method thereof of mechanical polishing.
Unicircuit is the core component of computer and electronic industry.Unicircuit is manufactured on the semi-conductor silicon chip.Monocrystalline silicon piece is to scale off on the silicon single crystal rod of being grown up by orientation, and diameter is generally 3 inches to 8 inches, and thickness is lower than 1.0 millimeters.Fig. 1 is the silicon chip surface synoptic diagram.Silicon chip surface is divided into hundreds of sub-districts.The corresponding integrated circuit chip in each sub-district.Through after a series of work programs, one integrated circuit chip is cut or is stripped down from silicon chip, has just finished the making processes of unicircuit again through packaging and testing.
Photoetching is the basic fundamental of making unicircuit on silicon chip, at first makes the electronic unit that is become by P-N roped party on the silicon chip of polishing, and its diameter is less than 1.0 microns, even less than 0.5 micron.In order to isolate different P-N statement of account unit, carved groove on the silicon chip and filled sedimentary isolator (being generally silicon oxide).Fig. 1 shows the silicon chip (11) that has comprised a plurality of integrated (12), wherein divides into the high density area (13) (generally being in the central position) of electronic unit and the low density area (14) (generally being in marginal position) of electronic unit on each sheet again.
Connect by the sedimentary metal of silicon chip surface (aluminium, tungsten, copper etc.) style between the electronic unit, because the unicircuit that individual layer connects can not be given full play to the effect of electronic unit, therefore multiwalled metal style is used to improve integrated level, the isolator that is deposited between each layer separates, along with the function of increase (now above the ten layers) unicircuit of the number of plies also just along with increasing widely.
Fig. 2 is the silicon chip synoptic diagram that has metal style and sedimentary insulation layer, on silicon chip (20), the thickness of insulation layer (21) (silicon oxide or other metal oxide) is a bit larger tham the thickness of metal level (22), and because being uneven of metal style demonstrates corresponding step, on the super large-scale integration plate, this bench height is equal to or less than 1.0 microns, and width and length range are between 1.0 microns and 1.0 millimeters.And on unicircuit, can form millions of steps by the first layer metal.
The unfairness on this surface makes subsequent technique very difficult, therefore need carry out leveling processing to silicon chip surface.Fig. 3 is silicon chip (30) synoptic diagram after the leveling polished finish, and the surface of insulation layer among the figure (31) and metal level (32) is on the same level, can carry out the deposition process of secondary metal style and insulation layer on this surface.
Chemistry---mechanical polishing process is the glossing that dominates in the semi-conductor industry, Fig. 4 is the basic synoptic diagram of the used burnishing device of this technology, polishing disk (43) is fixed on the universal stage (41), silicon chip (44) is fixed on the anchor clamps (45), pressurization, rotation and horizontal mobile mechanism (46) are arranged on the anchor clamps, the dual rotation of silicon chip and universal stage make on the silicon chip every with polishing disk between relative movement keep identical linear velocity.The grit that has also added diameter in the polishing fluid and be 20-100 nanometers plays the effect of mechanical polishing to surface to be machined, and basic solution then plays the effect of chemical rightenning.
Polishing disk (43) is made up of porous material, and the hole that is communicated with in the polishing disk has guaranteed the circulation of polishing fluid, and can take away the abrasive dust of polishing process.The material of polishing disk is selected extremely important, but range of choice is little again.At first can not use conductor, because the abrasive dust of conductor can cause short circuit, this has just foreclosed metal and graphite.Secondly polishing disk again can not be too hard, and too hard dish can not be fit to the up-and-down shape of silicon chip surface trace, and this has just foreclosed general stupalith.Remaining mainly is these class materials of plastics.At present general polishing disk material is a polyurethane material, and in plastic material, urethane has very high wear resistance, and the mutability of its composition has formed the adjustable of mechanical property.Can form porous Polyurethane polishing disk at an easy rate with whipping agent.
On the whole, this polishing disk rigidity is too poor, and the trace that flexible big polishing disk can be fitted in silicon chip well rises and falls on the surface of (less than 10 microns), therefore can macroscopic view goes up to form polishing uniformly.But in subrange, this flexible polishing dish has important disadvantages.Flexible excessive polishing disk is fitted in and is uneven, and on the different surface of soft or hard, not only can not produce flat surface as shown in Figure 3, even may form short circuit in partial area or open circuit.Therefore the rigidity that improves polishing disk is to improve the key of silicon chip plane leveling degree.
Michacl E.Thomas is at United States Patent (USP) 5; 197; proposed a kind of matrix material porous polishing disk in 999, this matrix material is a matrix by the porous material (for example cellular polyurethane) of high flexibility, adds the grit of about 30% volume ratio or fiber as strengthening phase.This method can improve the rigidity of material greatly.But, scuffing can be caused, on silicon chip so can not appear on the polishing disk surface because the diameter of strengthening phase is too big.This has just limited the use of this material.
By some the polishing disk that multilayer material is formed has been proposed in addition.Joseph R.Breivogel (United States Patent (USP) 5,212,910) has proposed a kind of trilaminar polishing disk, and the first layer is a flexible bottom layer, and the second layer is the rigid layer of high rigidity, and the 3rd layer is the porous flexible layer, 0.1 to 2.0 millimeter of this bed thickness.Because the 3rd layer is actual execution polished surface layer, it can not be too thick, can not surpass 0.1 millimeter too much.In polishing process,, need carry out surface working to it through diamond disk commonly used because the polishing disk surface is damaged.And 0.1 millimeter thickness is littler too much than the thickness (1.0 to 2.0 millimeters) of general polishing disk, thereby the life-span of this polishing is extremely short.
John M.Pierce (United States Patent (USP) 5,287,663) also proposes the design of similar multilayer polishing disk, and the flexible polishing layer thickness that he proposes can not surpass 0.003 inch (0.007 millimeter).This is just more difficult to provide enough working lives.
People (1995 Internatinal Symplsium onSeminconductor Manufacturing such as Toshirin K-D, P214～217), a kind of high rigid synthetic resin polishing disk of atresia is proposed, be carved with wide 0.5 millimeter on this panel surface, the thread-shaped ditch that pitch is 2.0 millimeters is poor, and this ditch is poor to provide polishing fluid mobile passage, and the Young's modulus of this material is 5GPa, this is high in plastic material, but also can not satisfy the requirement of use properties fully.
Also have a problem in the polishing process, that is exactly that the edge section of silicon chip is bigger than centre portions polished amount, and polishing disk also correspondingly presents uneven wearing and tearing, and this has just increased the needs that polishing disk carried out surperficial shaping processing with diamond disk.
Laurence D.Schultz (United States Patent (USP) 5,412,769) has proposed a kind of shaped design of polishing disk, this polishing disk outer is just like gear shape, in the transverse movement process of silicon chip, the outer part of silicon chip has run off and has thrown the outer of not coiling, and is in vacant state.Owing to reduced the time of outer part and polishing disk friction, also just reduced the minimizing of outer segment thickness.This compensating action makes silicon chip reach even attenuate.
The object of the present invention is to provide a kind of novel polishing disk that is used for chemistry-mechanical polishing and manufacture method thereof, this polishing disk can provide in subrange with the favorable rigidity of silicon chip and contact, guaranteeing provides the polishing of height flat integralization in one integrated scope.In the macro-scope of silicon chip, this polishing disk can provide certain flexibility again, rises and falls with the trace that adapts to silicon chip surface.The shaped design of this polishing disk has also guaranteed the even attenuate of outer part in the silicon chip.
The objective of the invention is by having selected the hexagonal boron nitride stupalith to realize as the polishing disk material.
As everyone knows, (h-BN) has the laminate structure of similar graphite to hexagonal boron nitride, structure cell is a hexagonal system, on six side planes, atom is closely arranged, and is combined by very strong covalence key, and between six squares of faces, atom is combined by very weak Robert Van de Walle power, and therefore on various performances, hexagonal boron nitride all shows very strong anisotropy.Hexagonal boron nitride can be described as the unique soft pottery that uses on the engineering, hexagonal boron nitride sintered compact bending strength is 83MPa, Young's modulus is 20GPa, though these values are significantly smaller than typical pottery (be respectively hundreds of MPa and surpass 100 GPa), but it is big more a lot of than plastic material, therefore, the hexagonal boron nitride polishing disk that rigidity is strong can provide more uniform leveling processing for silicon chip than plastic polishing dish.The chemical stability of hexagonal boron nitride is better in addition, and in polishing process, some part that the plastic polishing dish contacts with silicon chip may be dewatered heating and be gone bad, and the hexagonal boron nitride polishing disk just this phenomenon can not take place.Also have, the wear debris of hexagonal boron nitride does not have the viscosity of plastics bits, is not easy to assemble on polishing disk agglomerating, therefore, reduces and has gone to carry out surface working with diamond.
Just be based on this suitable rigidity, good chemical stability of hexagonal boron nitride, and the not viscosity of abrasive dust, make hexagonal boron nitride polishing disk of the present invention have excellent performance, be specially adapted to the polishing of the silicon chip of unicircuit.
The present invention is used for chemistry---the polishing disk of mechanical polishing, it is characterized in that this polishing disk material is the hexagonal boron nitride pottery, and the porosity of this hexagonal boron nitride stupalith is 20-70%.
The polishing disk of the chemistry that is used for of the present invention---mechanical polishing is individual layer hexagonal boron nitride dish structure, the perhaps three-layer composite structure of being made up of hexagonal boron nitride polishing layer, elastic layer and chassis.For three-layer composite structure, polishing layer wherein is made up of hexagonal boron nitride abrading block at interval, and this abrading block can be polygon geometrical shape, and as square, hexahedron etc., lateral dimension is 10-50mm, highly is 2.0-50mm, and spacing is 0.2-5.0mm; Elastic layer can be the monoblock cushion or be made up of elastomer block (size is corresponding to the abrading block size) at interval that thickness is 0.2-2.0mm, and this elastic layer can be rubber such as silicon rubber, plastics etc.; The chassis can be the metal or alloy plate, as stainless steel plate.
The polishing disk of the chemistry that is used for of the present invention---mechanical polishing be shaped as disc or annular (radial width of endless belt is greater than polished thing diameter).The polishing disk of annular can make the edge section of silicon chip and centre portions obtain uniform processing.
Can contain the hard abrasive material less than 100 nanometers in the used hexagonal boron nitride pottery of polishing disk of the present invention, this hard abrasive material is selected from SiO
2, Si
3N
4SiC, CeO, Al
2O
3In one or more.
The porosity of the ceramic polished dish of hexagonal boron nitride of the present invention is 20-70%, this in order to satisfy the requirement of semiconductor wafer chemistry-mechanical polishing, if porosity is less than 20%, then this polishing disk can not store enough chemical brightening solutions, can not fully hold the abrasive dust of polishing, thereby the use properties of polishing disk is descended.Otherwise, if porosity greater than 70%, the then rigidity of polishing disk and insufficient strength, the work-ing life of having reduced polishing.From the technical standpoint of the production technique of hexagonal boron nitride ceramic block, it also is the most convenient-to-running reaching porosity and be 20-70%.
The manufacture method of porous hexagonal boron nitride polishing disk of the present invention is any method in the following several method:
(1) sintering method: the hexagonal boron nitride ceramic powder is mixed with additive (as boric acid, water), compression molding, under 450-2200 ℃ of temperature in nitrogen containing atmosphere sintering, hexagonal boron nitride particles is linked together by solid-state diffusion.
(2) polymerization crosslinking method: the macromolecular material that hexagonal boron nitride ceramic powder and polymerizable is crosslinked (for example polyurethane adhesive and silane coupling agent) mixes, compression molding is afterwards heat-treated (temperature: room temperature-200 ℃) again and is carried out promptly forming the porous hexagonal boron nitride behind the polymerization crosslinking.
(3) foaming, polymerization crosslinking method: macromolecular material and whipping agent that hexagonal boron nitride ceramic powder and polymerizable is crosslinked mix, compression molding, heat-treat (temperature: room temperature-200 ℃), after polymerization crosslinking and foaming, promptly form porous hexagonal boron nitride pottery.
For the polishing disk of three-layer composite structure, at first produce abrading block by above-mentioned either party's legal system, then abrading block, elastic layer and chassis are bonded together.
For the polishing disk that contains the hard abrasive material, its manufacture method is at first with hard abrasive material and hexagonal boron nitride porcelain powder mixes, and then makes polishing disk with aforesaid method.
Be described with reference to the accompanying drawings the structure and the shape of polishing disk of the present invention several exemplary (indefinitenesses) among the following embodiment, and corresponding method of manufacture.
Fig. 1 comprises a plurality of integrated silicon chip synoptic diagram, 11-silicon chip wherein, 12-integrated, 13-high density area, 14-low density area.
Fig. 2 is the synoptic diagram that has the silicon chip of metal style and sedimentary insulation layer, 20-silicon chip wherein, 21-insulation layer, 22-metal level.
Fig. 3 is the synoptic diagram of the silicon chip after the leveling polished finish, 30-silicon chip wherein, 31-insulation layer, 32-metal level.
Fig. 4 is the used burnishing device synoptic diagram of CMP (Chemical Mechanical Polishing) process, 41-universal stage wherein, 42-turning axle, 43-polishing disk, 44-silicon chip, 45-anchor clamps, 46-pressurization rotation translation mechanism.
Fig. 5 is the polishing disk synoptic diagram of disc single layer structure of the present invention, 51-polishing disk wherein, 52-silicon chip, 53-anchor clamps, 54-pressurization, rotation and translation mechanism.
Fig. 6 is the polishing disk synoptic diagram of annular single layer structure of the present invention, 61-polishing disk wherein, 62-silicon chip, 63-anchor clamps, 64-pressurization, rotation and translation mechanism.
Fig. 7 is the diagrammatic cross-section of the polishing disk of a kind of three-decker of the present invention, 71-chassis wherein, 72-elastic layer, 73-polishing layer.
Fig. 8 is the diagrammatic cross-section of the polishing disk of another kind of three-decker of the present invention, wherein 81-chassis, 82-elastic layer, 83-polishing layer.
Embodiment 1
With reference to Fig. 5, with after water mixes, compression molding is the high 10mm disk of diameter 100mm with hexagonal boron nitride powder (mean particle size is 0.5 micron), in 1900 ℃ of sintering 3 hours, then makes polishing disk.Detected result, porosity 53%, Young's modulus 6.9GPa, breaking tenacity: 7.0MPa.
Embodiment 2
With reference to Fig. 6, hexagonal boron nitride powder (granularity is 2.0 microns) with after 5% (weight) SiC particle (granularity is 60 nanometers) mixes, is mixed with water again, and compression molding is that external diameter is the annular dish of the high 6mm of 40mm for the 100mm internal diameter, in 1800 ℃ of sintering 4 hours, then make polishing disk shown in Figure 6.Detected result: porosity: 47%, Young's modulus: 8.8GPa, breaking tenacity: 11.8MPa.
Embodiment 3
With reference to Fig. 7, hexagonal boron nitride powder (3.0 microns of granularities) is mixed into paste with 10% (weight) Polyurethane caking agent with 5% (weight) silane coupling agent, be molded into the square abrading block that is of a size of 20mm * 20mm * 20mm in 70 ℃ of dryings after 30 minutes, handled 20 minutes in 150 ℃, with caking agent abrading block is bonded on the thick 2mm silica gel cushion, be bonded in again on the thick 1.5mm stainless steel plate, spacing between abrading block is 2mm, promptly make polishing disk as shown in Figure 7, the detected result of abrading block is: porosity 50%, Young's modulus 6.0GPa, breaking tenacity: 7.0MPa.
Embodiment 4
With reference to Fig. 8, with hexagonal boron nitride powder (3.0 microns of granularities) and 5% (weight) SiO
2Powder (granularity 80 nanometers) mixes, mix with 3% (weight) whipping agent, 10% (weight) urethane and 3% (weight) silane coupling agent again, after 80 ℃ of dryings 20 minutes, be molded into the hexahedron abrading block of 30 * 30 * 10mm, and in 140 ℃ of thermal treatments 30 minutes.Bond together with the silica gel cushion of caking agent, with caking agent it is bonded on the thick stainless steel plate of 1mm again, promptly make polishing disk as shown in Figure 8 each abrading block and 30 * 30 * 1mm.Detected result to abrading block: porosity 42%, Young's modulus: 5.0GPa, breaking tenacity 6.0MPa.
The structure of polishing disk of the present invention and shape can have multiple variation and the combination except that the foregoing description, and for example the abrading block in the three-layer composite structure can be assembled into circular.
The present invention adopts the hexagonal boron nitride porous ceramic film material to make polishing disk, has semiconductor element---and the integrated optimum over-all properties of polishing, in the life-span of having improved polishing disk greatly, improved the productivity and the quality level of semiconducter device.
Claims (11)
1. a polishing disk that is used for chemistry-mechanical polishing is characterized in that this polishing disk material is the hexagonal boron nitride pottery, and the porosity of this boron nitride ceramic material is 20-70%.
2. according to the polishing disk that is used for chemistry-mechanical polishing of claim 1, it is characterized in that this polishing disk is an individual layer hexagonal boron nitride structure, or the hexagonal boron nitride polishing layer is arranged, the three-layer composite structure that elastic layer and chassis are formed.
3. according to the polishing disk that is used for chemistry-mechanical polishing of claim 1, what it is characterized in that this polishing disk is shaped as collar plate shape or circular ring type.
4. according to the polishing disk that is used for chemistry-mechanical polishing of claim 2, it is characterized in that described polishing layer is made up of hexagonal boron nitride abrading block at interval, described elastic layer is the monoblock cushion or is made up of the interval elastomer block.
5. according to the polishing disk that is used for chemistry-mechanical polishing of claim 4, it is characterized in that described abrading block is polygon geometrical shape, 10-50 millimeters of lateral dimensions, high 2.0-50 millimeters, 0.2-50 millimeters of spacings.
6. be used for the polishing disk of chemistry-mechanical polishing according in the claim 1-5 any, it is characterized in that wherein said hexagonal boron nitride pottery contains the hard abrasive material less than 100 nanometers.
7. according to the polishing disk that is used for chemistry-mechanical polishing of claim 6, it is characterized in that described hard abrasive material is selected from SiO
2, Si
3N
4, SiC, CeO, Al
2O
3In one or more.
8. manufacture method that is used for the polishing disk of chemistry-mechanical polishing, main raw is a hexagonal boron nitride, it is characterized in that the hexagonal boron nitride ceramic powder is mixed with additive, compression molding, again under 450-2200 ℃ of temperature in nitrogen containing atmosphere sintering.
9. manufacture method that is used for the polishing disk of chemistry-mechanical polishing, main raw is a hexagonal boron nitride, it is characterized in that hexagonal boron nitride powder and the crosslinked macromolecular material of polymerizable are mixed compression molding, heat-treat, temperature is a room temperature-200 ℃ again.
10. manufacture method that is used for the polishing disk of chemistry-mechanical polishing, main raw is a hexagonal boron nitride, it is characterized in that macromolecular material that hexagonal boron nitride powder and polymerizable is crosslinked and whipping agent mix compression molding, heat-treat, temperature is a room temperature-200 ℃.
11. according to Claim 8,9, or 10 manufacture method, it is characterized in that being mixed with in the hexagonal boron nitride powder filler hard abrasive material less than 100 nanometers.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97116804 CN1060424C (en) | 1997-08-26 | 1997-08-26 | Polishing disc for chemcal-mechanical polishing and making method |
| PCT/US1998/017720 WO1999010129A1 (en) | 1997-08-26 | 1998-08-26 | A pad for chemical-mechanical polishing and apparatus and methods of manufacture thereof |
| AU91222/98A AU9122298A (en) | 1997-08-26 | 1998-08-26 | A pad for chemical-mechanical polishing and apparatus and methods of manufacturethereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97116804 CN1060424C (en) | 1997-08-26 | 1997-08-26 | Polishing disc for chemcal-mechanical polishing and making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1174869A CN1174869A (en) | 1998-03-04 |
| CN1060424C true CN1060424C (en) | 2001-01-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97116804 Expired - Fee Related CN1060424C (en) | 1997-08-26 | 1997-08-26 | Polishing disc for chemcal-mechanical polishing and making method |
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|---|---|
| CN (1) | CN1060424C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100551624C (en) * | 2005-01-31 | 2009-10-21 | 三芳化学工业股份有限公司 | Adsorption sheet for fixing polishing substrate, method for manufacturing same, and polishing apparatus |
| KR20150039795A (en) * | 2012-08-02 | 2015-04-13 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof |
| JP5373171B1 (en) * | 2012-10-20 | 2013-12-18 | 株式会社ナノテム | Grinding wheel and grinding / polishing apparatus using the same |
| CN104263318A (en) * | 2014-04-24 | 2015-01-07 | 沈衡平 | Diamond abrasive of elastic abrasion block used for grinding and polishing nonmetal concave and convex surfaces |
| CN105150090A (en) * | 2015-08-19 | 2015-12-16 | 南京航空航天大学 | Sapphire ball cover grinding tool based on controlled structure CVD diamond film |
| CN106956212B (en) * | 2017-03-17 | 2018-12-04 | 衢州学院 | A kind of aluminium nitride chip polishing method using chemical polishing solution and ceramic polished disk |
| CN108188865B (en) * | 2018-03-16 | 2020-01-10 | 中国工程物理研究院激光聚变研究中心 | Laser crystal polishing device |
| CN110576386B (en) * | 2018-06-26 | 2021-10-12 | 蓝思精密(东莞)有限公司 | Processing method of fingerprint ring |
| KR102293781B1 (en) * | 2019-11-11 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | Polishing pad, preparation method thereof, and preparation method of semiconductor device using same |
-
1997
- 1997-08-26 CN CN 97116804 patent/CN1060424C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1174869A (en) | 1998-03-04 |
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