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CN105968347B - The preparation method of N substitution carboxyls polyaniline/cadmium sulfide quantum dot composite material - Google Patents

The preparation method of N substitution carboxyls polyaniline/cadmium sulfide quantum dot composite material Download PDF

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CN105968347B
CN105968347B CN201610339986.4A CN201610339986A CN105968347B CN 105968347 B CN105968347 B CN 105968347B CN 201610339986 A CN201610339986 A CN 201610339986A CN 105968347 B CN105968347 B CN 105968347B
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cadmium
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polyaniline
cadmium sulfide
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CN105968347A (en
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章家立
杨标
宋琦
郭赞如
程光
尤鸿蒲
周帅丰
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East China Jiaotong University
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Abstract

一种N‑取代羧基聚苯胺接枝硫化镉量子点复合材料的制备方法,所述方法以N‑苯基甘氨酸为单体,在其原位聚合体系中通过引入镉源,生成含镉前驱体,再通过引入硫源,利用镉与硫之间的成核机理,制备化学接枝的N‑取代羧基聚苯胺硫化镉量子点复合材料。采用本发明的方法所制备的复合材料其电子传输速率较硫化镉、聚苯胺有非常大的提升,提高了硫化镉的抗光腐蚀性能,能够在可见光下进行光电转换并光催化降解有机染料,改善了材料的溶解性能及稳定性。所得的复合材料可应用于光催化剂、传感器、太阳能电池等领域。

A preparation method of N-substituted carboxyl polyaniline grafted cadmium sulfide quantum dot composite material, the method uses N-phenylglycine as a monomer, and generates a cadmium-containing precursor by introducing a cadmium source in its in-situ polymerization system , and then by introducing a sulfur source, using the nucleation mechanism between cadmium and sulfur to prepare chemically grafted N-substituted carboxypolyaniline cadmium sulfide quantum dot composites. Compared with cadmium sulfide and polyaniline, the electronic transport rate of the composite material prepared by the method of the present invention is greatly improved, the light corrosion resistance of cadmium sulfide is improved, photoelectric conversion and photocatalytic degradation of organic dyes can be performed under visible light, The solubility and stability of the material are improved. The obtained composite material can be applied in photocatalyst, sensor, solar cell and other fields.

Description

N-取代羧基聚苯胺/硫化镉量子点复合材料的制备方法Preparation method of N-substituted carboxyl polyaniline/cadmium sulfide quantum dot composite material

技术领域technical field

本发明涉及一种N-取代羧基聚苯胺/硫化镉量子点复合材料的制备方法,属导电高分子材料技术领域。The invention relates to a preparation method of an N-substituted carboxyl polyaniline/cadmium sulfide quantum dot composite material, which belongs to the technical field of conductive polymer materials.

背景技术Background technique

能源缺乏及环境污染是当今所面临的最紧迫的问题,世界各国都在寻求一种能够有效应对能源危机、缓解环境压力、发展低碳经济、实现可持续发展的新兴产业。而太阳能光伏因其清洁、安全、便利、高效等特点,在世界各地蓬勃发展,且被誉为迎接新能源时代到来的朝阳产业。同时,伴随有机太阳能电池和光催化降解技术的逐渐成熟,通过聚合物复合半导体量子点来制备光活性材料也越来越受到广大研究者的青睐。Energy shortage and environmental pollution are the most urgent problems facing today. All countries in the world are looking for an emerging industry that can effectively deal with the energy crisis, relieve environmental pressure, develop a low-carbon economy, and achieve sustainable development. Due to its cleanliness, safety, convenience, and high efficiency, solar photovoltaics are flourishing all over the world, and are known as a sunrise industry that welcomes the arrival of the new energy era. At the same time, with the gradual maturity of organic solar cells and photocatalytic degradation technologies, the preparation of photoactive materials by polymer composite semiconductor quantum dots has become more and more favored by researchers.

聚苯胺作为一种导电高分子材料,是一种新型的高效电子和空穴转移物,因其合成简单、掺杂机制独特、导电性好、比电容高等诸多优点在超级电容器电极材料、光催化剂、传感器的研究中有着重要的研究价值,然而聚苯胺的刚性结构致使其溶解加工性能较差,且在可见光下很难进行光电转换。另外,硫化镉(CdS)是一种优良的N型半导体材料,其禁带宽度为2.42eV,电子迁移率为2×10-2m2.V-1.s-1,具有独特的光电化学性能,在太阳能电池和光电器材领域有着非常诱人的应用前景,而且硫化镉半导体材料的光学性能与其本身晶粒尺寸的大小和形态密切相关,因此制备一定粒径大小的硫化镉粒子成为研究其光学性质的基础。然而,美中不足的是硫化镉化合物成核速率非常快,极易发生团聚,并且在可见光下硫化镉极易发生光腐蚀,这些缺陷对硫化镉进一步的应用带来了一定的影响。因此,无论是导电聚苯胺材料还是硫化镉材料单独应用在光电转化器件中都存在不足与缺陷,为了充分利用俩种材料的优点,发挥其协同效应,将硫化镉量子点与聚苯胺复合来制备一种在可见光下能够高速进行光电转换、循环稳定性好的聚苯胺/硫化镉量子点复合光电材料具有非常重要的现实意义。As a conductive polymer material, polyaniline is a new type of high-efficiency electron and hole transfer material. Because of its simple synthesis, unique doping mechanism, good conductivity, and high specific capacitance, it has many advantages in supercapacitor electrode materials, photocatalysts, etc. However, the rigid structure of polyaniline makes its dissolution processing performance poor, and it is difficult to perform photoelectric conversion under visible light. In addition, cadmium sulfide (CdS) is an excellent N-type semiconductor material with a bandgap of 2.42eV, an electron mobility of 2×10 -2 m 2. V -1. s -1 , and a unique photoelectrochemical It has a very attractive application prospect in the field of solar cells and optoelectronic equipment, and the optical properties of cadmium sulfide semiconductor materials are closely related to their own grain size and shape, so preparing cadmium sulfide particles with a certain particle size has The basis of optical properties. However, the fly in the ointment is that the nucleation rate of cadmium sulfide is very fast, and it is easy to agglomerate, and cadmium sulfide is easy to be photocorroded under visible light. These defects have a certain impact on the further application of cadmium sulfide. Therefore, whether it is conductive polyaniline material or cadmium sulfide material used alone in photoelectric conversion devices, there are deficiencies and defects. In order to make full use of the advantages of the two materials and exert their synergistic effect, cadmium sulfide quantum dots and polyaniline are compounded to prepare A polyaniline/cadmium sulfide quantum dot composite photoelectric material capable of high-speed photoelectric conversion under visible light and good cycle stability has very important practical significance.

为了制备聚苯胺硫化镉量子点复合材料国内外研究人员做过很多尝试。因为聚苯胺本身为共轭的大π电子结构,能够与镉的3d5/2轨道发生π-π堆叠,另外,聚苯胺链中带负电N和带正电的Cd离子,它们能够通过静电作用进行连接。在众多的研究中通过π-π堆积作用、静电作用和氢键作用堆叠而成是最常见的制备机理,其中有:原位聚合法、电化学聚合法、溶胶凝胶法、自组装法。以此制备的聚苯胺硫化镉复合材料,在可见光下有着较好的光电效应并且在一定程度上能够控制硫化镉的形貌。然而这些途径制备的复合材料,由于不同组分间力作用较弱导致界面距离较大,电子和空穴分离效果较差,而且产物的纯度不高、抗光腐蚀性较差。为了促进电子在俩种材料间快速移动,并同时改善硫化镉在可见光下极易发生光腐蚀的缺陷,常见的改善方法是将硫化镉与聚苯胺形成核-壳结构,将硫化镉量子点包裹在有机导电聚苯胺中以作保护层作用,但该方法会降低硫化镉的光转换效率和循环稳定性。In order to prepare polyaniline cadmium sulfide quantum dot composite materials, researchers at home and abroad have made many attempts. Because polyaniline itself has a conjugated large π electron structure, it can undergo π-π stacking with the 3d 5/2 orbital of cadmium. In addition, the negatively charged N and positively charged Cd ions in the polyaniline chain can pass electrostatic interaction to connect. In many studies, stacking by π-π stacking, electrostatic interaction and hydrogen bonding is the most common preparation mechanism, including: in-situ polymerization, electrochemical polymerization, sol-gel method, and self-assembly method. The polyaniline cadmium sulfide composite material prepared in this way has a good photoelectric effect under visible light and can control the morphology of cadmium sulfide to a certain extent. However, the composite materials prepared by these methods have relatively large interfacial distance due to the weak force between different components, poor separation effect of electrons and holes, and the purity of the product is not high, and the photocorrosion resistance is poor. In order to promote the rapid movement of electrons between the two materials, and at the same time improve the defect that cadmium sulfide is prone to photocorrosion under visible light, a common improvement method is to form a core-shell structure of cadmium sulfide and polyaniline, and wrap cadmium sulfide quantum dots It can be used as a protective layer in organic conductive polyaniline, but this method will reduce the light conversion efficiency and cycle stability of cadmium sulfide.

综上所述,能够开发研制出具有高光电转换效率、抗光腐蚀的聚苯胺硫化镉量子点复合材料,并且寻找一种经济有效且具有普遍适用性的制备该类复合材料的方法是非常重要的。In summary, it is very important to develop polyaniline cadmium sulfide quantum dot composite materials with high photoelectric conversion efficiency and light corrosion resistance, and to find a cost-effective and universally applicable method for preparing such composite materials. of.

发明内容Contents of the invention

本发明的目的是提供一种制备抗光腐蚀性强、光电转化性能优越的羧基改性聚苯胺硫化镉量子点复合材料的制备方法。The purpose of the present invention is to provide a method for preparing a carboxyl-modified polyaniline cadmium sulfide quantum dot composite material with strong light corrosion resistance and excellent photoelectric conversion performance.

本发明的技术方案为:Technical scheme of the present invention is:

本发明采用两步合成法,首先在含有N-苯基甘氨酸和镉离子的溶液中进行原位聚合得含镉的N-取代羧基聚苯胺前驱体;然后通过缓慢引入硫源,利用硫与镉间成核机理制备使硫化镉量子点接枝到聚合物上,以形成N-取代羧基聚苯胺硫化镉量子点复合材料。The present invention adopts a two-step synthesis method. First, in-situ polymerization is carried out in a solution containing N-phenylglycine and cadmium ions to obtain a cadmium-containing N-substituted carboxyl polyaniline precursor; Mechanism of intermediate nucleation to make cadmium sulfide quantum dots grafted onto the polymer to form N-substituted carboxyl polyaniline cadmium sulfide quantum dot composites.

本发明所述的制备N-取代羧基聚苯胺硫化镉量子点复合材料的方法步骤如下:The method step of preparing N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material of the present invention is as follows:

称取一定量的N-苯基甘氨酸与镉源溶于一定体积的定浓度的HCl溶液中,并通过超声分散形成均一的混合溶液,记为A溶液;再将氧化剂过硫酸铵溶于一定浓度的HCl溶液中形成均一的混合溶液,记为B溶液;将B溶液缓慢滴入放置于冰水浴中的A溶液;反应一定时间后,再于常温下持续搅拌一定时间,用水、乙醇对产物洗涤多次,产物在真空干燥箱中干燥,得到含镉的复合材料前驱体;最后在冰水浴无光照情况下通过缓慢引入硫源,反应一定时间,利用硫源与镉源间的成核机理制备得到N-取代羧基聚苯胺硫化镉复合材料。Weigh a certain amount of N-phenylglycine and cadmium source and dissolve it in a certain volume of HCl solution with a certain concentration, and form a uniform mixed solution by ultrasonic dispersion, which is recorded as solution A; then dissolve the oxidant ammonium persulfate in a certain concentration A homogeneous mixed solution is formed in the HCl solution, which is denoted as B solution; slowly drop B solution into A solution placed in an ice-water bath; after reacting for a certain period of time, continue stirring at room temperature for a certain period of time, and wash the product with water and ethanol Multiple times, the product was dried in a vacuum oven to obtain a cadmium-containing composite material precursor; finally, the sulfur source was slowly introduced in an ice-water bath without light, and reacted for a certain period of time, using the nucleation mechanism between the sulfur source and the cadmium source. The N-substituted carboxyl polyaniline cadmium sulfide composite material is obtained.

N-取代羧基聚苯胺硫化镉量子点复合材料名义聚合反应式如下:The nominal polymerization reaction formula of N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material is as follows:

所述复合材料在水溶液中呈现为浅紫色状,与前驱体颜色(墨绿色)有所不同,预示着聚合物的生成。The composite material is light purple in aqueous solution, which is different from the color of the precursor (dark green), indicating the formation of a polymer.

经FTIR、UV-Vis、XRD光谱以及XPS技术成功的证实了硫化镉量子点化学接枝到N-取代羧基聚苯胺的结构上,经SEM和TEM技术对材料的形貌研究发现,N-取代羧基聚苯胺硫化镉复合材料为点状结构紧密的附着于纤维结构上的形貌,这种形貌保留了聚苯胺和硫化镉结构的完整性和规整度,研究表明硫化镉接枝在N-取代羧基聚苯胺聚合物链上,形成了具有较强相互作用的复合材料。The FTIR, UV-Vis, XRD spectrum and XPS techniques have successfully confirmed the chemical grafting of cadmium sulfide quantum dots to the structure of N-substituted carboxyl polyaniline. The morphology of the material has been studied by SEM and TEM techniques, and N-substituted Carboxylated polyaniline cadmium sulfide composites have a point-like structure closely attached to the fiber structure, which retains the integrity and regularity of the polyaniline and cadmium sulfide structures. Studies have shown that cadmium sulfide grafted on N- Substituting carboxylated polyaniline polymer chains forms a composite material with stronger interactions.

本发明中,在强酸环境下制备含镉的前驱体,盐酸环境提高了单体的反应活性,如果没有酸的存在聚合反应将变得非常缓慢。在本发明中,盐酸应保持其氢离子浓度为0.5~2mol/L。In the present invention, the cadmium-containing precursor is prepared in a strong acid environment, and the hydrochloric acid environment improves the reactivity of the monomer, and the polymerization reaction will become very slow without the presence of acid. In the present invention, hydrochloric acid should keep its hydrogen ion concentration to be 0.5 ~ 2mol/L.

本发明中,由于以N-苯基甘氨酸上的羧基为反应活性点,镉的前驱体的形成与羧基的浓度有一定的依赖关系,因此在本发明中,N-苯基甘氨酸与镉离子的最优摩尔比在1:0.5~1:4。In the present invention, since the carboxyl group on the N-phenylglycine is the reactive point, the formation of the precursor of cadmium has a certain dependence relationship with the concentration of the carboxyl group, so in the present invention, the N-phenylglycine and cadmium ion The optimal molar ratio is 1:0.5~1:4.

本发明中,盐酸水溶液中盐酸的浓度是0~6mol/L。In the present invention, the concentration of hydrochloric acid in the hydrochloric acid aqueous solution is 0-6mol/L.

本发明中,含镉前驱体与硫源摩尔比对于硫化镉量子点生成具有较大的影响,最终直接影响到复合材料中硫化镉的含量。因此,在本发明中,含镉前驱体与硫源的摩尔比为1:0.2~1:5,最优选的是1:0.5~1:3。In the present invention, the molar ratio of the cadmium-containing precursor to the sulfur source has a great influence on the generation of cadmium sulfide quantum dots, and finally directly affects the content of cadmium sulfide in the composite material. Therefore, in the present invention, the molar ratio of the cadmium-containing precursor to the sulfur source is 1:0.2-1:5, most preferably 1:0.5-1:3.

由于镉的前驱体与硫源之间属成核过程,时间和温度对成核有较大影响,过低或过高的反应温度和时间都不利于反应,因此在本发明中,聚合反应温度优选为0~10℃, 液相反应时间为0.5 ~ 3h。Due to the nucleation process between the precursor of cadmium and the sulfur source, time and temperature have a greater impact on nucleation, too low or too high reaction temperature and time are not conducive to reaction, so in the present invention, the polymerization temperature The temperature is preferably 0-10°C, and the liquid phase reaction time is 0.5-3h.

本发明中采用已知方法对复合材料产物进行分离提纯等后处理。该处理包括除去残留在反应混合物中的未参加反应的单体、反应生成的副产物、反应生成的低聚物,以及残留的氧化剂。处理步骤为:离心、有机溶剂洗涤、去离子水洗涤、有机溶剂洗涤、沉淀和干燥。In the present invention, known methods are used to carry out post-treatments such as separation and purification of the composite material product. The treatment includes removing unreacted monomers, by-products of the reaction, oligomers of the reaction, and residual oxidants remaining in the reaction mixture. The processing steps are: centrifugation, organic solvent washing, deionized water washing, organic solvent washing, precipitation and drying.

本发明有益效果是:采用本发明的化学氧化聚合方法可制得N-取代羧基聚苯胺硫化镉量子点复合材料,本发明方法经济有效、具有普遍适用性,而且羧基的引入对于量子点的分散起着重要的作用。本发明所制得的N-取代羧基聚苯胺硫化镉量子点复合材料界面间作用力显著加强,对于硫化镉的易团聚及极易光腐蚀的缺陷有较大的改善,且在光电转换的过程中,具有高的循环稳定性。The beneficial effects of the present invention are: the chemical oxidation polymerization method of the present invention can be used to prepare N-substituted carboxy polyaniline cadmium sulfide quantum dot composite material, the method of the present invention is economical and effective, and has universal applicability, and the introduction of carboxyl groups has a great effect on the dispersion of quantum dots play an important role. The interfacial force of the N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material prepared by the present invention is significantly strengthened, and the defects of cadmium sulfide, which are easy to agglomerate and extremely easy to be corroded by light, are greatly improved, and in the process of photoelectric conversion , with high cycle stability.

本发明所得的N-取代羧基聚苯胺硫化镉量子点复合材料可应用于光催化剂、传感器、太阳能电池等领域作导电高分子材料。The N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material obtained in the invention can be used as a conductive polymer material in the fields of photocatalysts, sensors, solar cells and the like.

附图说明Description of drawings

图1是本发明一种N-取代羧基聚苯胺硫化镉量子点复合材料的化学氧化制备方法流程图;Fig. 1 is a kind of chemical oxidation preparation method flowchart of N-substituted carboxy polyaniline cadmium sulfide quantum dot composite material of the present invention;

图2是化学接枝与机械共混的N-取代羧基聚苯胺硫化镉量子点复合材料(NPANI/CdS)及单一材料的红外光谱;Figure 2 is the infrared spectrum of the chemically grafted and mechanically blended N-substituted carboxypolyaniline cadmium sulfide quantum dot composite material (NPANI/CdS) and a single material;

图中a为纯的N-取代羧酸聚苯胺(NPNAI)的红外衍射谱图,b为简单机械共混的聚苯胺硫化镉量子点复合材料的红外衍射谱图,c为聚苯胺硫化镉量子点复合材料的红外衍射谱图。对于纯的NPANI的红外谱图各特征峰分别代表:波长为3447 cm-1和1665 cm-1的吸收峰对应其结构上N-H的伸缩振动和羧基C=O伸缩振动;波长为1557 cm-1和1480cm-1的吸收峰分别对应的是结构中醌环和苯环中C=C共振吸收;波长为801cm-1的吸收峰对应的是苯环的对位二取代结构。将NPANI/CdS的红外特征吸收峰与NPANI的进行对比,发现相对于NPANI出现的O-H伸缩振动的峰,在NPANI/CdS上几乎没有峰的出现,说明复合材料上O-H键上的H被其它的原子取代;而在NPANI上1665 cm-1处出现的C=O键的伸缩振动峰,在复合材料上也红移到了1684cm-1,说明Cd2+的存在破坏了苯环、氨基、羧基形成的共轭体系,降低了该体系的电子云的密度,使得这些官能团出现了红移现象。将简单机械共混的NPANI/CdS共混材料上的O-H伸缩振动的峰和C=O键的伸缩振动峰与纯的NPANI上的进行对比,发现这些官能团对应的峰位置完全吻合,并没有出现偏移现象,再次说明了,NPANI/CdS复合材料上的CdS粒子是以化学接枝的方式与NPANI相连接的。In the figure a is the infrared diffraction spectrum of pure N-substituted carboxylic acid polyaniline (NPNAI), b is the infrared diffraction spectrum of simple mechanically blended polyaniline cadmium sulfide quantum dot composites, and c is the polyaniline cadmium sulfide quantum dot composite material. Infrared diffraction spectra of dot composites. The characteristic peaks of the infrared spectrum of pure NPANI respectively represent: the absorption peaks with wavelengths of 3447 cm -1 and 1665 cm -1 correspond to the stretching vibration of NH and the stretching vibration of carboxyl C=O in its structure; the wavelength is 1557 cm -1 The absorption peaks at 1480cm -1 and 1480cm -1 respectively correspond to the C=C resonance absorption in the quinone ring and the benzene ring in the structure; the absorption peak at 801cm -1 corresponds to the para-disubstituted structure of the benzene ring. Comparing the infrared characteristic absorption peak of NPANI/CdS with that of NPANI, it is found that compared with the peak of OH stretching vibration that appears in NPANI, there is almost no peak on NPANI/CdS, indicating that the H on the OH bond on the composite material is absorbed by other atomic substitution; and the stretching vibration peak of the C=O bond that appeared at 1665 cm -1 on NPANI also red-shifted to 1684 cm -1 on the composite material, indicating that the existence of Cd 2+ destroyed the formation of benzene ring, amino group and carboxyl group The conjugated system of the system reduces the density of the electron cloud of the system, making these functional groups redshift. Comparing the OH stretching vibration peaks and C=O bond stretching vibration peaks on the simple mechanically blended NPANI/CdS blend material with those on pure NPANI, it is found that the peak positions corresponding to these functional groups are completely consistent, and there is no The offset phenomenon again shows that the CdS particles on the NPANI/CdS composite are connected with NPANI by chemical grafting.

图3是化学接枝的N-取代聚苯胺硫化镉量子点复合材料及单一材料的XRD谱图;Fig. 3 is the XRD spectrogram of chemically grafted N-substituted polyaniline cadmium sulfide quantum dot composite material and a single material;

图中a曲线为纯的NPANI的X射线衍射图谱,b曲线为NPANI/CdS复合材料的X射线衍射图谱。因 NPANI是一种非结晶态的聚合物材料,较难从X射线衍射图谱中看出它的衍射角,因此,图a中,只在21°左右附近出现了一个较大的衍射峰。将a图与b图进行对比,不难看出复合材料的X射线衍射图谱明显与单独的NPANI材料有所不同,复合材料的谱图在NPANI的基础上还出现了衍射角为25.6o、42.1o、54.1o这三个衍射峰,分别对应于CdS在(111),(220),(311)的三个晶面,这证明了复合材料中存在CdS材料。Curve a in the figure is the X-ray diffraction pattern of pure NPANI, and curve b is the X-ray diffraction pattern of NPANI/CdS composite material. Because NPANI is a non-crystalline polymer material, it is difficult to see its diffraction angle from the X-ray diffraction pattern. Therefore, in Figure a, only a large diffraction peak appears around 21°. Comparing figure a with figure b, it is not difficult to see that the X-ray diffraction pattern of the composite material is obviously different from that of the NPANI material alone. The spectrum of the composite material also has diffraction angles of 25.6 o and 42.1 o on the basis of NPANI , 54.1 o These three diffraction peaks correspond to the three crystal planes of CdS in (111), (220), (311), which proves the existence of CdS material in the composite material.

图4化学接枝与机械混合的N-取代羧基聚苯胺硫化镉量子点复合材料及单一材料的荧光光谱;Fig. 4 chemically grafted and mechanically mixed N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material and the fluorescence spectrum of a single material;

在硫化镉的图谱中,其在480cm-1和540cm-1左右出现俩个宽且强的吸收峰,它们分别对应着硫化镉的本征激子发射与硫化镉的陷阱发射;而相较于硫化镉,机械混合的NPANI/CdS材料与共价键接的NPANI/CdS材料同样在480cm-1和540cm-1左右出现了特征峰,但其强度有着较大的减弱,这证明由于高速电子接收体NPANI的存在,硫化镉在可见光下产生的电子被快速的传导至NPANI上,这抑制了硫化镉中电子与空穴的快速复合,并同时由于光电子的转移使电子发生猝灭,大大减弱了硫化镉的陷阱发射。而通过化学接枝的复合材料荧光强度有更大的减弱,进一步证明了NPANI与硫化镉是通过化学接枝作用连接在一起且这种作用能够减小界面间距离,加速光电子、空穴的分离。In the spectrum of cadmium sulfide, there are two broad and strong absorption peaks around 480cm -1 and 540cm -1 , which correspond to the intrinsic exciton emission and trap emission of cadmium sulfide respectively; Cadmium sulfide, mechanically mixed NPANI/CdS materials and covalently bonded NPANI/CdS materials also have characteristic peaks around 480cm -1 and 540cm -1 , but their intensity has a large weakening, which proves that due to the high-speed electron acceptor In the presence of NPANI, the electrons generated by cadmium sulfide under visible light are quickly conducted to NPANI, which inhibits the rapid recombination of electrons and holes in cadmium sulfide, and at the same time, the electrons are quenched due to the transfer of photoelectrons, which greatly weakens the sulfide Cadmium trap emitters. The fluorescence intensity of the composite material through chemical grafting has a greater weakening, which further proves that NPANI and cadmium sulfide are connected together through chemical grafting, and this effect can reduce the distance between interfaces and accelerate the separation of photoelectrons and holes. .

图5是化学接枝的N-取代羧基聚苯胺硫化镉量子点复合材料的XPS谱图;Fig. 5 is the XPS spectrogram of the N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material of chemical grafting;

由图可知,两种材料都含有C、N、O这三种元素,相比于NPANI的XPS谱图,复合材料NPANI/CdS在结合能为400eV和160eV左右分别出现了Cd3d5/2和S2p两个新峰,这说明CdS粒子已经成功的存在于NPANI上。此外,由于在NPANI和NPANI-CdS材料中C/O比分别为4.39和4.31,俩者基本一致,进一步验证了CdS主要是与NPANI中的羧基发生反应,从而加强NPANI和CdS的界面作用。It can be seen from the figure that both materials contain three elements, C, N, and O. Compared with the XPS spectrum of NPANI, the composite material NPANI/CdS exhibits Cd3d 5/2 and S Two new peaks at 2p indicate that CdS particles have successfully existed on NPANI. In addition, since the C/O ratios in NPANI and NPANI-CdS materials are 4.39 and 4.31, respectively, the two are basically the same, which further verifies that CdS mainly reacts with the carboxyl groups in NPANI, thereby strengthening the interfacial interaction between NPANI and CdS.

图6是化学接枝的N-取代羧基聚苯胺硫化镉量子点复合材料及NPANI的O1sXPS分峰谱图;Fig. 6 is the O 1s XPS peak spectrum of chemically grafted N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material and NPANI;

图6(a)、图6(b)分别是NPANI和CdS/NPANI复合材料的O1s分峰谱图,图6(c)与图6(d),分别是复合材料中Cd与S的特征吸收峰,进一步证明其中有CdS。Figure 6(a) and Figure 6(b) are the O 1s split peak spectra of NPANI and CdS/NPANI composite materials, respectively, and Figure 6(c) and Figure 6(d) are the characteristics of Cd and S in the composite materials The absorption peak further proves that there is CdS in it.

相较于图6(a),图6(b)中在532.30eV处出现的新峰为O-Cd结构,此外图6(b)中在532.19处的O-H结构所占比例较图6(a)有着一定的降低,这证明了Cd成功的与NPANI形成接枝作用。而由于图5以观察到复合材料中含有硫化镉,因此这进一步验证了在CdS/NPANI复合材料中,CdS与NAPNI是以化学接枝作用连接。Compared with Figure 6(a), the new peak at 532.30eV in Figure 6(b) is the O-Cd structure, and in addition, the proportion of O-H structure at 532.19 in Figure 6(b) is higher than that in Figure 6(a ) has a certain decrease, which proves that Cd has successfully grafted with NPANI. Since it is observed in Figure 5 that cadmium sulfide is contained in the composite material, this further verifies that in the CdS/NPANI composite material, CdS and NAPNI are connected by chemical grafting.

图7是化学接枝的N-取代羧基聚苯胺硫化镉量子点复合材料的TEM和HRTEM谱图;Fig. 7 is the TEM and HRTEM spectrogram of the N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material of chemical grafting;

图7(a)为纯的NPANI的TEM图,图7(b)为NPANI/CdS复合材料的TEM图,图7(c)为更大倍数下NPANI/CdS复合材料的TEM图,图7(d)为HR-TEM下的复合材料中CdS粒子晶面间距图。从图中可以观察到,N取代羧基聚苯胺(图a)为长达几百纳米、宽为35-55nm的均匀纤维条状结构,而图中的深颜色部分是由于NPANI的长链条自由卷曲链接使样品厚度变深。图7(b)(c)(d)分别是不同放大倍数下的CdS/NPANI的TEM图,从图7(b)(c)中可以清晰的观察到在各NPANI长链条上分散着一定量的深浅不同的暗点,对应着CdS粒子,且该CdS粒子的粒径在5-30纳米间,没有明显的团聚现象,这进一步验证了在NPANI链条上存在着CdS粒子,且由于NPANI的存在,一定程度上抑制了CdS的团聚;图7(d)为NPANI/CdS高倍透射电镜(HR-TEM)照片,可以观察到明暗不同的俩层结构,其中边缘处为无定型结构的NPANI层,中间深颜色部分有着一定规律排列的对应着纳米硫化镉粒子的六方晶型,且通过计算其在光催化前晶格间距为0.271nm。Figure 7(a) is the TEM image of pure NPANI, Figure 7(b) is the TEM image of the NPANI/CdS composite, Figure 7(c) is the TEM image of the NPANI/CdS composite at a larger magnification, Figure 7( d) Diagram of interplanar spacing of CdS particles in the composite material under HR-TEM. It can be observed from the figure that N-substituted carboxypolyaniline (figure a) is a uniform fibrous strip structure with a length of several hundred nanometers and a width of 35-55nm, and the dark color in the figure is due to the free coiling of the long chain of NPANI Links make the sample thickness darker. Figure 7(b)(c)(d) are the TEM images of CdS/NPANI under different magnifications. From Figure 7(b)(c), it can be clearly observed that a certain amount of The dark spots of different shades correspond to CdS particles, and the particle size of the CdS particles is between 5-30 nanometers, and there is no obvious agglomeration phenomenon, which further verifies that there are CdS particles on the NPANI chain, and due to the existence of NPANI , to a certain extent inhibits the agglomeration of CdS; Figure 7(d) is a NPANI/CdS high-power transmission electron microscope (HR-TEM) photo, and two layers of different light and dark structures can be observed, among which the NPANI layer with an amorphous structure is at the edge, The dark part in the middle has a certain regular arrangement corresponding to the hexagonal crystal form of nano-cadmium sulfide particles, and the lattice spacing before photocatalysis is calculated to be 0.271nm.

图8是化学接枝N-取代羧基聚苯胺硫化镉量子点复合材料及单一材料的TG谱图Figure 8 is the TG spectrum of the chemically grafted N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material and a single material

图8(a)为N-AN单体在的800℃内的热失重图,图8(b)为纯的NPANI在800℃内的热失重图,图8(c)为NPANI/CdS复合材料在800℃内的热失重图,图8(d)为a、b、c三种物质的热失重叠加图。从图8(a)中可以发现:单体N-AN在600℃之前就已经完全分解。300℃之前图8(a)中的热失重几乎呈直线下降的趋势,这是单体中-COOH与-NH2的断键温度,400℃左右则为单体上苯环-C=C-的断键温度。Figure 8(a) is the thermogravimetric diagram of N-AN monomer at 800 °C, Figure 8(b) is the thermogravimetric diagram of pure NPANI at 800 °C, and Figure 8(c) is the NPANI/CdS composite The thermal weight loss diagram at 800 °C, Fig. 8(d) is the overlaid diagram of the thermal loss of the three substances a, b, and c. From Figure 8(a), it can be found that the monomer N-AN has been completely decomposed before 600 °C. Before 300°C, the thermal weight loss in Figure 8(a) shows a downward trend almost in a straight line, which is the bond breaking temperature of -COOH and -NH2 in the monomer, and around 400°C is the temperature of the benzene ring -C=C- on the monomer Bond breaking temperature.

对比图8(a)、图8(b)两图我们发现,聚合后的NPANI在温度升高到300℃之前的热失重率相比于N-AN单体的热失重率要低的多。说明聚合后的NPANI的热稳定更强,使得-COOH与-NH2官能团的分解温度得到了提高。与此同时,聚合反应的发生还使得NPANI上-C=C-的断键温度从单体的400℃上升到了497℃,并且整个聚合物完全分解时的温度,由于苯环共轭体系的生成,也升高了100℃左右,体系中纯的NPANI最终完全分解的温度也达到了680℃。Comparing Figure 8(a) and Figure 8(b), we find that the thermal weight loss rate of polymerized NPANI before the temperature rises to 300°C is much lower than that of N-AN monomer. It shows that the thermal stability of polymerized NPANI is stronger, which makes the decomposition temperature of -COOH and -NH2 functional groups increased. At the same time, the occurrence of the polymerization reaction also made the bond breaking temperature of -C=C- on NPANI rise from 400 °C of the monomer to 497 °C, and the temperature at which the entire polymer was completely decomposed, due to the formation of the benzene ring conjugated system , also increased by about 100°C, and the final complete decomposition temperature of pure NPANI in the system also reached 680°C.

从图8(b)、图8(c)两图的TGA曲线上我们可以直观的看到NPANI在温度达到680℃时就已经完全分解,而复合材料NPANI/CdS在温度达到800℃时有22%左右的物质没有被分解完全,这是由于复合材料中含有镉这种物质的原因,镉的分解温度非常的高,800℃的温度并不能使它分解。在温度升高到300℃之前,NPANI/CdS复合材料的热失重曲线相比较于纯的NPANI来说相对平滑,这是由于复合材料上CdS与苯环上-COOH与-NH2产生了相互作用力,使得它们的稳定性增强了,因此不容易分解,这证明了由于硫化镉的存在复合材料稳定性有着一定的提高。From the TGA curves of Figure 8(b) and Figure 8(c), we can intuitively see that NPANI has been completely decomposed when the temperature reaches 680 °C, while the composite NPANI/CdS has 22% when the temperature reaches 800 °C. About % of the substance has not been completely decomposed. This is because the composite material contains cadmium. The decomposition temperature of cadmium is very high, and the temperature of 800 ° C cannot decompose it. Before the temperature rises to 300 °C, the thermogravimetric curve of NPANI/CdS composite is relatively smooth compared with that of pure NPANI, which is due to the interaction between CdS on the composite and -COOH and -NH2 on the benzene ring , so that their stability is enhanced, so they are not easy to decompose, which proves that there is a certain improvement in the stability of the composites due to the presence of cadmium sulfide.

图9是化学接枝N-取代羧基聚苯胺硫化镉量子点复合材料光催化前后的HRTEM谱图;Fig. 9 is the HRTEM spectrogram before and after photocatalysis of chemically grafted N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite;

图中,图9(a)为HR-TEM下NPANI/CdS复合材料光催化前的CdS粒子的晶体结构图;图9(b)为HR-TEM下NPANI/CdS复合材料光催化后的CdS粒子的晶体结构图。从图中可知,NPANI/CdS复合材料在光催化前CdS粒子的晶格间距为0.271nm,光照一个循环后的晶格间距为0.272nm。光照前后,复合材料上CdS的晶格间距几乎没有发生变化,说明有NPANI保护的CdS粒子的晶体结构在光照后并未发生破坏。HR-TEM更直观的说明了NPANI上的-COOH对CdS粒子起到了很好的稳定和保护作用,提高了硫化镉的抗光腐蚀性能。In the figure, Figure 9(a) is the crystal structure of CdS particles before photocatalysis of NPANI/CdS composite material under HR-TEM; Figure 9(b) is the CdS particle after photocatalysis of NPANI/CdS composite material under HR-TEM crystal structure diagram. It can be seen from the figure that the lattice spacing of CdS particles of the NPANI/CdS composite material before photocatalysis is 0.271nm, and the lattice spacing after one cycle of light irradiation is 0.272nm. Before and after illumination, the lattice spacing of CdS on the composite material hardly changed, indicating that the crystal structure of CdS particles protected by NPANI was not destroyed after illumination. HR-TEM more intuitively shows that -COOH on NPANI plays a very good role in stabilizing and protecting CdS particles, and improves the photocorrosion resistance of cadmium sulfide.

具体实施方式Detailed ways

实施例1:Example 1:

本实施例将说明本发明方法以N-苯基甘氨酸与乙酸镉的摩尔比1:2,通过原位聚合生成含镉前驱体,再在冰水浴下,以镉的前驱体与九水合硫化钠摩尔比为1:1,反应时间为2h,按照俩步合成的反应路径实现。This example will illustrate the method of the present invention to generate a cadmium-containing precursor by in-situ polymerization with a molar ratio of N-phenylglycine and cadmium acetate of 1:2, and then in an ice-water bath, use the cadmium precursor and sodium sulfide nonahydrate The molar ratio is 1:1, the reaction time is 2h, and it is realized according to the reaction path of two-step synthesis.

称取0.756gN-苯基甘氨酸和2.66g乙酸镉溶于40ml的浓度为1M的HCl溶液中,超声30min中至混合液分散形成均一溶液,标号为A;称取1.427g的过硫酸铵溶于60ml的浓度为1M的HCl溶液中,超声5min至分散形成均一溶液,标号为B;在冰水浴下,保持A液持续搅拌,将B液缓慢滴入A液中,反应6h时间,再在常温下18h时间,反应结束后静置离心,并用水和无水乙醇洗涤数次以除去反应中生成的低聚物和无机杂质,再至于烘箱中并在60℃下烘干24h备用;再称取0.1g上述烘干的含镉前驱体样品溶于50ml的去离子水中,超声30min至分散形成均一溶液标号为C,并在冰水浴无光照下保持搅拌,再取2.4g的九水合硫化钠溶于50ml去离子水中充分分散标号为D,将D液缓慢滴入C液中,反应2h,静置离心并用水洗涤数次以出去多余的无机杂质,并于烘箱中在60℃下烘干。Weigh 0.756g of N-phenylglycine and 2.66g of cadmium acetate and dissolve in 40ml of HCl solution with a concentration of 1M, and ultrasonicate for 30min until the mixed solution is dispersed to form a homogeneous solution, labeled as A; weigh 1.427g of ammonium persulfate and dissolve in In 60ml of HCl solution with a concentration of 1M, ultrasonically disperse for 5 minutes to form a uniform solution, labeled as B; in an ice-water bath, keep liquid A continuously stirring, slowly drop liquid B into liquid A, react for 6 hours, and then Leave it for 18 hours, after the reaction, let it stand and centrifuge, and wash it several times with water and absolute ethanol to remove the oligomers and inorganic impurities generated in the reaction, then put it in an oven and dry it at 60°C for 24 hours for later use; then weigh Dissolve 0.1g of the above-mentioned dried cadmium-containing precursor sample in 50ml of deionized water, ultrasonically disperse for 30min to form a homogeneous solution labeled C, keep stirring in an ice-water bath without light, and then take 2.4g of sodium sulfide nonahydrate to dissolve Fully disperse the labeled D in 50ml of deionized water, slowly drop the D solution into the C solution, react for 2 hours, let it stand for centrifugation and wash it with water several times to remove excess inorganic impurities, and dry it in an oven at 60°C.

由本实施例所制得的N-取代羧基聚苯胺硫化镉量子点复合材料能够较好的分散在水中,其中硫化镉的含量为12.89%,光催化降解有机染料罗丹明B能达到80%,循环稳定性高,硫化镉的抗光腐蚀性得到大大的提升。The N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material prepared by this embodiment can be better dispersed in water, wherein the content of cadmium sulfide is 12.89%, and the photocatalytic degradation of organic dye rhodamine B can reach 80%. High stability, the light corrosion resistance of cadmium sulfide has been greatly improved.

经FTIR、UV-Vis、XRD光谱以及XPS技术成功的证实了硫化镉量子点键合到聚苯胺的结构上,经SEM和TEM技术对材料的表面形貌研究发现,N-取代羧基聚苯胺硫化镉复合材料为点状结构紧密的附着于纤维结构上的形貌,这种形貌保留了N-取代羧基聚苯胺和硫化镉结构的完整性和规整度,通过检测证明N-取代羧基聚苯胺与硫化镉良好的通过接枝连接,形成复合材料。FTIR, UV-Vis, XRD spectroscopy and XPS technology successfully confirmed that the cadmium sulfide quantum dots are bonded to the structure of polyaniline, and the surface morphology of the material was found by SEM and TEM technology. The cadmium composite material is a point-like structure closely attached to the fiber structure. This shape retains the integrity and regularity of the N-substituted carboxypolyaniline and cadmium sulfide structure. It is proved by testing that the N-substituted carboxypolyaniline It is well connected with cadmium sulfide through grafting to form a composite material.

实施例2Example 2

本实施例将说明本发明方法以N-苯基甘氨酸与乙酸镉的摩尔比为1:2,通过原位聚合生成含镉前驱体,再在冰水浴下,以镉的前驱体与九水合硫化钠摩尔比为1:0.5,反应时间为2h,按照俩步合成的反应路径实现。This example will illustrate that the molar ratio of N-phenylglycine and cadmium acetate is 1:2 in the method of the present invention to generate a cadmium-containing precursor through in-situ polymerization, and then in an ice-water bath, the cadmium precursor and nonahydrate sulfide The sodium molar ratio is 1:0.5, the reaction time is 2h, and the reaction path of the two-step synthesis is realized.

称取0.756gN-苯基甘氨酸和2.66g乙酸镉溶于40ml的浓度为1M的HCl溶液中,超声30min中至混合液分散形成均一溶液,标号为A;称取1.427g的过硫酸铵溶于60ml的浓度为1M的HCl溶液中,超声5min至分散形成均一溶液,标号为B;在冰水浴下,保持A液持续搅拌,将B液缓慢滴入A液中,反应6h时间,再在常温下18h时间,反应结束后静置离心,并用水和无水乙醇洗涤数次以除去反应中生成的低聚物和无机杂质,再至于烘箱中并在60℃下烘干24h备用;再称取0.1g上述烘干的含镉前驱体样品溶于50ml的去离子水中,超声30min至分散形成均一溶液标号为C,并在冰水浴无光照下保持搅拌,再取1.2g的九水合硫化钠溶于50ml去离子水中充分分散标号为D,将D液缓慢滴入C液中,反应2h,静置离心并用水洗涤数次以出去多余的无机杂质,并于烘箱中在60℃下烘干。Weigh 0.756g of N-phenylglycine and 2.66g of cadmium acetate and dissolve in 40ml of HCl solution with a concentration of 1M, and ultrasonicate for 30min until the mixed solution is dispersed to form a homogeneous solution, labeled as A; weigh 1.427g of ammonium persulfate and dissolve in In 60ml of HCl solution with a concentration of 1M, ultrasonically disperse for 5 minutes to form a uniform solution, labeled as B; in an ice-water bath, keep liquid A continuously stirring, slowly drop liquid B into liquid A, react for 6 hours, and then Leave it for 18 hours, after the reaction, let it stand and centrifuge, and wash it several times with water and absolute ethanol to remove the oligomers and inorganic impurities generated in the reaction, then put it in an oven and dry it at 60°C for 24 hours for later use; then weigh Dissolve 0.1g of the above dried cadmium-containing precursor sample in 50ml of deionized water, ultrasonically disperse for 30min to form a uniform solution labeled C, keep stirring in an ice-water bath without light, and then take 1.2g of sodium sulfide nonahydrate to dissolve Fully disperse the labeled D in 50ml of deionized water, slowly drop the D solution into the C solution, react for 2 hours, let it stand for centrifugation and wash it with water several times to remove excess inorganic impurities, and dry it in an oven at 60°C.

由本实施例所制得的N-取代羧基聚苯胺硫化镉量子点复合材料能够较好的溶解在水中,其中硫化镉的含量为5.6%,光催化降解有机染料罗丹明B能达到53%,且循环稳定性高,硫化镉的抗光腐蚀性得到大大的提升。The N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material prepared by this embodiment can be dissolved in water preferably, wherein the content of cadmium sulfide is 5.6%, and the photocatalytic degradation of the organic dye rhodamine B can reach 53%, and The cycle stability is high, and the photocorrosion resistance of cadmium sulfide has been greatly improved.

实施例3Example 3

本实施例将说明本发明方法以N-苯基甘氨酸与乙酸镉的摩尔比为1:2,通过原位聚合生成含镉前驱体,再在冰水浴下,以乙酸镉与九水合硫化钠摩尔比为1:1,反应时间为0.5h,按照俩步合成的反应路径实现。This example will illustrate that the molar ratio of N-phenylglycine and cadmium acetate is 1:2, and the cadmium-containing precursor is generated by in-situ polymerization, and then in an ice-water bath, the molar ratio of cadmium acetate and sodium sulfide nonahydrate is The ratio is 1:1, the reaction time is 0.5h, and it is realized according to the reaction path of two-step synthesis.

称取0.756gN-苯基甘氨酸和2.66g乙酸镉溶于40ml的浓度为1M的HCl溶液中,超声30min中至混合液分散形成均一溶液,标号为A;称取1.427g的过硫酸铵溶于60ml的浓度为1M的HCl溶液中,超声5min至分散形成均一溶液,标号为B;在冰水浴下,保持A液持续搅拌,将B液缓慢滴入A液中,反应6h时间,再在常温下18h时间,反应结束后静置离心,并用水和无水乙醇洗涤数次以除去反应中生成的低聚物和无机杂质,再至于烘箱中并在60℃下烘干24h备用;再称取0.1g上述烘干的含镉前驱体样品溶于50ml的去离子水中,超声30min至分散形成均一溶液标号为C,并在冰水浴无光照下保持搅拌,再取2.4g的九水合硫化钠溶于50ml去离子水中充分分散标号为D,将D液缓慢滴入C液中,反应0.5h,静置离心并用水洗涤数次以出去多余的无机杂质,并于烘箱中在60℃下烘干。Weigh 0.756g of N-phenylglycine and 2.66g of cadmium acetate and dissolve in 40ml of HCl solution with a concentration of 1M, and ultrasonicate for 30min until the mixed solution is dispersed to form a homogeneous solution, labeled as A; weigh 1.427g of ammonium persulfate and dissolve in In 60ml of HCl solution with a concentration of 1M, ultrasonically disperse for 5 minutes to form a uniform solution, labeled as B; in an ice-water bath, keep liquid A continuously stirring, slowly drop liquid B into liquid A, react for 6 hours, and then Leave it for 18 hours, after the reaction, let it stand and centrifuge, and wash it several times with water and absolute ethanol to remove the oligomers and inorganic impurities generated in the reaction, then put it in an oven and dry it at 60°C for 24 hours for later use; then weigh Dissolve 0.1g of the above-mentioned dried cadmium-containing precursor sample in 50ml of deionized water, ultrasonically disperse for 30min to form a homogeneous solution labeled C, keep stirring in an ice-water bath without light, and then take 2.4g of sodium sulfide nonahydrate to dissolve Fully disperse the label D in 50ml of deionized water, slowly drop the D solution into the C solution, react for 0.5h, let it stand for centrifugation and wash it with water several times to remove excess inorganic impurities, and dry it in an oven at 60°C .

.由本实施例所制得的N-取代羧基聚苯胺硫化镉量子点复合材料能够较好的溶解在水中,其中硫化镉的含量为6.71%,光催化降解有机染料罗丹明B能达到62%,循环稳定性高,硫化镉的抗光腐蚀性得到大大的提升。The N-substituted carboxyl polyaniline cadmium sulfide quantum dot composite material prepared by this embodiment can be dissolved in water preferably, wherein the content of cadmium sulfide is 6.71%, and the photocatalytic degradation of organic dye rhodamine B can reach 62%, The cycle stability is high, and the photocorrosion resistance of cadmium sulfide has been greatly improved.

实施例4~实施例8将说明本发明中改变N-苯基甘氨酸与乙酸镉的摩尔比对复合材料中硫化镉含量及光催化降解效率的影响。Examples 4 to 8 will illustrate the influence of changing the molar ratio of N-phenylglycine to cadmium acetate in the present invention on the content of cadmium sulfide in the composite material and the photocatalytic degradation efficiency.

实施例4:Example 4:

重复实施例1,但N-苯基甘氨酸与乙酸镉的摩尔比为1:0.5,得到复合材料中硫化镉的含量为5.91%,光催化降解有机染料罗丹明B能达到57%。Repeat Example 1, but the molar ratio of N-phenylglycine to cadmium acetate is 1:0.5, the content of cadmium sulfide in the composite material is 5.91%, and the photocatalytic degradation of the organic dye rhodamine B can reach 57%.

实施例5:Example 5:

重复实施例1,但N-苯基甘氨酸与乙酸镉的摩尔比为1:1.5,得到复合材料其中硫化镉的含量为9.87%,光催化降解有机染料罗丹明B能达到71%。Repeat Example 1, but the molar ratio of N-phenylglycine to cadmium acetate is 1:1.5, and the content of cadmium sulfide in the obtained composite material is 9.87%, and the photocatalytic degradation of the organic dye rhodamine B can reach 71%.

实施例6:Embodiment 6:

重复实施例1,但N-苯基甘氨酸与乙酸镉的摩尔比为1:2.5,得到复合材料其中硫化镉的含量为12.90%,光催化降解有机染料罗丹明B能达到80%。Repeat Example 1, but the molar ratio of N-phenylglycine to cadmium acetate is 1:2.5 to obtain a composite material in which the content of cadmium sulfide is 12.90%, and the photocatalytic degradation of the organic dye rhodamine B can reach 80%.

实施例7:Embodiment 7:

重复实施例1,但N-苯基甘氨酸与乙酸镉的摩尔比为1:3.5,得到复合材料其中硫化镉的含量为12.91%,光催化降解有机染料罗丹明B能达到80%。Repeat Example 1, but the molar ratio of N-phenylglycine to cadmium acetate is 1:3.5, and the content of cadmium sulfide in the obtained composite material is 12.91%, and the photocatalytic degradation of the organic dye rhodamine B can reach 80%.

实施例8:Embodiment 8:

重复实施例1,但N-苯基甘氨酸与乙酸镉的摩尔比为1:4,得到复合材料其中硫化镉的含量为12.92%,光催化降解有机染料罗丹明B能达到80%Repeat Example 1, but the mol ratio of N-phenylglycine and cadmium acetate is 1:4, obtains composite material wherein the content of cadmium sulfide is 12.92%, photocatalytic degradation organic dye Rhodamine B can reach 80%

实施例9~10:Embodiment 9~10:

实施例7-实施例9将说明本发明中不同乙酸镉与九水合硫化钠摩尔比对复合材料中硫化镉含量及光催化降解效率的影响。Examples 7-9 will illustrate the influence of different molar ratios of cadmium acetate and sodium sulfide nonahydrate in the present invention on the content of cadmium sulfide in the composite material and the photocatalytic degradation efficiency.

实施例9:Embodiment 9:

重复实施例2,但使镉的前驱体与九水合硫化钠摩尔比为1:1.5,得到的复合材料中硫化镉的含量为12.90%,光催化降解有机染料罗丹明B能达到80%。Repeat Example 2, but make the molar ratio of the precursor of cadmium to sodium sulfide nonahydrate 1:1.5, the content of cadmium sulfide in the obtained composite material is 12.90%, and the photocatalytic degradation of the organic dye rhodamine B can reach 80%.

实施例10:Example 10:

重复实施例2,但镉的前驱体与九水合硫化钠摩尔比为1:2.5,得到的复合材料中硫化镉的含量为12.81%,光催化降解有机染料罗丹明B能达到79.5%。Repeat Example 2, but the molar ratio of the precursor of cadmium to sodium sulfide nonahydrate is 1:2.5, the content of cadmium sulfide in the obtained composite material is 12.81%, and the photocatalytic degradation of the organic dye rhodamine B can reach 79.5%.

实施例11~14:Embodiment 11~14:

实施例11-实施例14将说明本发明中不同硫化反应时间对复合材料中硫化镉含量及光催化降解效率的影响。Example 11-Example 14 will illustrate the influence of different vulcanization reaction times in the present invention on the content of cadmium sulfide in the composite material and the photocatalytic degradation efficiency.

实施例11:Example 11:

重复实施例3,但使硫化反应时间为1h,得到的复合材料中硫化镉的含量为8.91%,光催化降解有机染料罗丹明B能达到69%。Repeat Example 3, but the vulcanization reaction time is 1h, the content of cadmium sulfide in the obtained composite material is 8.91%, and the photocatalytic degradation of the organic dye rhodamine B can reach 69%.

实施例12:Example 12:

重复实施例3,但使硫化反应时间为1.5h,得到的复合材料中硫化镉的含量为10.35%,光催化降解有机染料罗丹明B能达到73%。Repeat Example 3, but the vulcanization reaction time is 1.5h, the content of cadmium sulfide in the obtained composite material is 10.35%, and the photocatalytic degradation of the organic dye rhodamine B can reach 73%.

实施例13:Example 13:

重复实施例3,但使硫化反应时间为2.5h,得到的复合材料中硫化镉的含量为11.51%,光催化降解有机染料罗丹明B能达到78%。Repeat Example 3, but make the vulcanization reaction time 2.5h, the content of cadmium sulfide in the obtained composite material is 11.51%, and the photocatalytic degradation of the organic dye rhodamine B can reach 78%.

实施例14:Example 14:

重复实施例3,但使硫化反应时间为3h,得到的复合材料中硫化镉的含量为11.33%,光催化降解有机染料罗丹明B能达到77.6%。Repeat Example 3, but make the vulcanization reaction time 3h, the content of cadmium sulfide in the obtained composite material is 11.33%, and the photocatalytic degradation of the organic dye rhodamine B can reach 77.6%.

Claims (6)

  1. A kind of 1. preparation method of N- substitutions carboxyl polyaniline cadmium sulfide quantum dot composite material, it is characterised in that methods described Cadmium source is introduced in N- substitutes carboxyl polyaniline and obtains presoma containing cadmium, then the polyaniline sulphur of chemical graft is prepared with sulphur source reaction Cadmium quantum dot composite material;Comprise the following steps that:
    (1) a certain amount of N-phenylglycine and cadmium acetate is taken to be dissolved in HCl solution, and ultrasonic disperse forms uniform solution, mark Number it is A;
    (2) a certain amount of ammonium persulfate is taken to be dissolved in HCl solution, and ultrasonic disperse forms uniform solution, marked as B;
    (3) under the conditions of ice-water bath, keep A liquid persistently to stir, B liquid is slowly dropped into A liquid, react certain time, then normal Temperature lower reaction certain time, stand to centrifuge and simultaneously washed for several times with water and absolute ethyl alcohol, be placed in baking oven under certain temperature dry it is standby With;
    (4) it is presoma containing cadmium to take in a certain amount of (3) that product is dissolved in ultrasonic disperse in certain volume deionized water, marked as C, and It is kept stirring under ice-water bath no light, then takes a certain amount of sulphur source soluble in water fully dispersed, marked as D, D liquid is slowly dripped Enter in C liquid, react certain time, stand and filter and be washed with water for several times, and dried in baking oven.
  2. 2. N- substitutes the preparation method of carboxyl polyaniline cadmium sulfide quantum dot composite material, its feature according to claim 1 It is, the optimum molar ratio of described N-phenylglycine and cadmium ion is 1:0.5~1:4.
  3. 3. N- substitutes the preparation method of carboxyl polyaniline cadmium sulfide quantum dot composite material, its feature according to claim 1 It is, hydrogen ion concentration is 0.5~2mol/L in the HCl solution.
  4. 4. N- substitutes the preparation method of carboxyl polyaniline cadmium sulfide quantum dot composite material, its feature according to claim 1 It is, the optimum molar ratio of the presoma containing cadmium and sulphur source is 1:0.5~1:3.
  5. 5. N- substitutes the preparation method of carboxyl polyaniline cadmium sulfide quantum dot composite material, its feature according to claim 1 It is, the liquid phase reactor time of the presoma containing cadmium and sulphur source is 0.5~3h.
  6. 6. N- substitutes the preparation method of carboxyl polyaniline cadmium sulfide quantum dot composite material, its feature according to claim 1 It is, the sulphur source is nine hydrated sodium sulfides;The cadmium source is cadmium acetate.
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