CN105967136A - Microelectronic temperature sensor and preparation method thereof - Google Patents
Microelectronic temperature sensor and preparation method thereof Download PDFInfo
- Publication number
- CN105967136A CN105967136A CN201610305557.5A CN201610305557A CN105967136A CN 105967136 A CN105967136 A CN 105967136A CN 201610305557 A CN201610305557 A CN 201610305557A CN 105967136 A CN105967136 A CN 105967136A
- Authority
- CN
- China
- Prior art keywords
- monocrystal silicon
- silicon
- temperature sensor
- glass substrate
- graphene oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004377 microelectronic Methods 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000001259 photo etching Methods 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000005459 micromachining Methods 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 34
- 239000010931 gold Substances 0.000 description 22
- 238000012545 processing Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000011426 transformation method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0024—Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
- G01K7/343—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements the dielectric constant of which is temperature dependant
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
本发明公开了一种微电子温度传感器及其制备方法,具体是一种基于post‑COMS MEMS微加工技术的氧化石墨烯电容式温度传感器,由于氧化石墨烯材料是具有很高介电常数,且介电常数值随温度变化迅速变化的新型纳米材料。相比常用的Pt电阻,PN结等温度传感器,该温度传感器由于没有电流通过器件,避免了测量时候自加热效应对于测量过程的影响,从而使其具有测量误差小、热损耗低、动态响应时间短等优点。且由于氧化石墨烯在低温时,其介电常数随着温度上升而迅速上升,其实现了在低温检测所需高灵敏度温度传感器的一种方法。结合post‑COMS MEMS微加工技术,该温度传感器体积小,成本低,响应时间短。
The invention discloses a microelectronic temperature sensor and a preparation method thereof, specifically a graphene oxide capacitive temperature sensor based on post-COMS MEMS micromachining technology, since the graphene oxide material has a very high dielectric constant, and Novel nanomaterials whose dielectric constant values change rapidly with temperature. Compared with commonly used temperature sensors such as Pt resistors and PN junctions, this temperature sensor avoids the influence of self-heating effect on the measurement process due to no current passing through the device, so that it has small measurement error, low heat loss, and dynamic response time. short and so on. And because the dielectric constant of graphene oxide rises rapidly as the temperature rises at low temperatures, it realizes a method for high-sensitivity temperature sensors required for low-temperature detection. Combined with post‑COMS MEMS micromachining technology, the temperature sensor is small in size, low in cost and short in response time.
Description
技术领域technical field
本发明涉及一种微电子温度传感器及其制备方法,尤其是一种基于post-COMSMEMS微加工技术的氧化石墨烯电容式温度传感器及其制备方法,属于微电子机械系统与新材料相结合的技术领域。The present invention relates to a microelectronic temperature sensor and its preparation method, especially a graphene oxide capacitive temperature sensor based on post-COMSMEMS micromachining technology and its preparation method, which belongs to the technology combining micro-electromechanical systems and new materials field.
背景技术Background technique
温度是反应系统外界环境非常重要的参数,对环境监测、空气调节和工农业的生产有重要影响,因此温度检测具有重要的实际意义。众所周知,通用的温度传感器一般灵敏度较低,特别在低温领域的温度检测精度亦受到限制。若要通过后期检测电路来修正,其成本高,控制复杂,且需要经常维护,同时具有高功耗等缺点。有文献报道电容式微机械电容式温度温度传感器具有低功耗,低成本,抗电磁干扰等特点,其通常采用温度变化导致电容间距或者交叠面积变化的原理来检测温度。其灵敏度较低,同时由于采用的是表面硅微机械加工工艺,工艺复杂,成本高。所以如何实现低功耗,低成本,加工工艺简单,且应用范围更为广泛的高灵敏度温度传感器成为了温度传感器的设计的一个重要问题。Temperature is a very important parameter of the external environment of the reaction system, which has an important impact on environmental monitoring, air conditioning and industrial and agricultural production, so temperature detection has important practical significance. As we all know, general-purpose temperature sensors generally have low sensitivity, and the temperature detection accuracy is also limited especially in the low temperature field. If it is to be corrected by a post-detection circuit, the cost is high, the control is complicated, and frequent maintenance is required, and it has disadvantages such as high power consumption. It has been reported in the literature that capacitive micromechanical capacitive temperature sensors have the characteristics of low power consumption, low cost, and anti-electromagnetic interference. They usually use the principle that temperature changes lead to changes in capacitance spacing or overlapping areas to detect temperature. Its sensitivity is low, and at the same time, due to the surface silicon micromachining process, the process is complicated and the cost is high. Therefore, how to realize a high-sensitivity temperature sensor with low power consumption, low cost, simple processing technology and wider application range has become an important issue in the design of the temperature sensor.
发明内容Contents of the invention
目的:为解决现有技术的不足,提供一种基于氧化石墨烯材料的微电子温度传感器及其制备方法,低功耗,低成本,加工工艺简单,且应用范围更为广泛,灵敏度高。Objective: In order to solve the shortcomings of the existing technology, provide a microelectronic temperature sensor based on graphene oxide material and its preparation method, which has low power consumption, low cost, simple processing technology, wider application range and high sensitivity.
技术方案:为解决上述技术问题,本发明采用的技术方案为:Technical solution: In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is:
一种微电子温度传感器,其特征在于:包括玻璃衬底、单晶硅锚区、单晶硅梳齿结构;以体硅MEMS结构为电容极板,在玻璃衬底上表面的上方中心,设置两排与玻璃衬底上表面存有间距的单晶硅梳齿结构,两排单晶硅梳齿结构互相交叉排布且不接触,形成相连通的叉齿缝隙,叉齿缝隙中填充有氧化石墨烯电容介质;两排单晶硅梳齿结构分别通过设置左右两侧对称的单晶硅锚区来连接支撑;单晶硅锚区与玻璃衬底之间各溅射有一层Au膜,用于实现单晶硅锚区与玻璃衬底之间Au-Au键合连接;在玻璃衬底上设置有Au焊盘和Au引线用来引出单晶硅锚区,通过检测两排单晶硅梳齿结构的电容值以检测温度变化。A microelectronic temperature sensor, characterized in that it includes a glass substrate, a single crystal silicon anchor region, and a single crystal silicon comb structure; the bulk silicon MEMS structure is used as a capacitor plate, and the upper center of the upper surface of the glass substrate is set There are two rows of monocrystalline silicon comb structures with a distance from the upper surface of the glass substrate. The two rows of single crystal silicon comb structures are arranged intersecting each other without contacting each other to form connected fork gaps, which are filled with oxide Graphene capacitor medium; two rows of monocrystalline silicon comb structures are respectively connected and supported by setting symmetrical monocrystalline silicon anchor regions on the left and right sides; a layer of Au film is sputtered between the monocrystalline silicon anchor regions and the glass substrate, and the It is used to realize the Au-Au bonding connection between the single crystal silicon anchor region and the glass substrate; Au pads and Au leads are arranged on the glass substrate to lead out the single crystal silicon anchor region. By detecting two rows of single crystal silicon combs The capacitance value of the tooth structure to detect temperature changes.
所述的微电子温度传感器的制备方法,其特征在于:包括以下步骤:The preparation method of the microelectronic temperature sensor is characterized in that: comprising the following steps:
步骤1)、选取单晶硅衬底,并在单晶硅衬底上涂光刻胶,光刻梳齿结构区域的窗口,然后采用ICP或RIE反应离子刻蚀硅形成1-10μm深的浅槽,去掉光刻胶后再重新氧化单晶硅衬底;Step 1), select a single crystal silicon substrate, and apply photoresist on the single crystal silicon substrate, photolithographically etch the window in the comb structure area, and then use ICP or RIE reactive ion etching to form a shallow 1-10μm deep Groove, remove the photoresist and then re-oxidize the single crystal silicon substrate;
步骤2)、在单晶硅衬底上先后溅射Ti与Au并光刻,形成键合区域;Step 2), successively sputtering Ti and Au on the single crystal silicon substrate and performing photolithography to form a bonding area;
步骤3)、同时在玻璃衬底上建设相同材料与厚度的金属并光刻形成键合区域和引线压焊区域;Step 3), at the same time build metal of the same material and thickness on the glass substrate and photolithographically form the bonding area and the wire bonding area;
步骤4)、将单晶硅衬底和玻璃衬底采用Au-Au键合,并且采用化学机械抛光使单晶硅衬底减薄至所需厚度,再采用光刻和ICP硅刻蚀/深反应离子刻蚀DRIE单晶硅衬底至被刻穿释放形成单晶硅梳齿结构;Step 4), bond the single crystal silicon substrate and the glass substrate with Au-Au, and use chemical mechanical polishing to thin the single crystal silicon substrate to the required thickness, and then use photolithography and ICP silicon etching/deep Reactive ion etching DRIE single crystal silicon substrate until it is etched through and released to form a single crystal silicon comb structure;
步骤5)、将氧化石墨烯材料溶于乙醇中制成氧化石墨烯溶液,并涂敷至单晶硅梳齿结构上,待乙醇挥发后,氧化石墨烯电容介质沉积在单晶硅梳齿结构的叉齿缝隙中。Step 5) Dissolve the graphene oxide material in ethanol to make a graphene oxide solution, and apply it on the single crystal silicon comb structure. After the ethanol volatilizes, the graphene oxide capacitor dielectric is deposited on the single crystal silicon comb structure in the crevices of the forks.
作为优选方案,步骤2)中,在单晶硅衬底上先后溅射厚度为0.05μm的Ti与厚度为0.1μm的Au。As a preferred solution, in step 2), Ti with a thickness of 0.05 μm and Au with a thickness of 0.1 μm are successively sputtered on the single crystal silicon substrate.
有益效果:本发明提供的微电子温度传感器,是一种电容式温度传感器,所以没有电流通过器件,没有压阻式温度传感器在工作时存在着的电流对器件的加热现象,也就没有无法消除的测量误差,从而也使其热损耗低、动态响应时间短的优点。同时,与采用表面硅微结构相比,采用体硅结构梳齿状电极是为了使得由梳齿组成的平行板电容器具有更大的电容极板面积,以便填充更多的氧化石墨烯温度敏感材料,降低器件边缘电容的影响,从而可以提高传感器的灵敏度。同时相对于表面微机械结构,体硅微机械结构具有机械性能良好,稳定性高等特点。并且制备方法利用硅片和玻璃的Au-Au键合,RIE和ICP刻蚀工艺就可以完成传感器的加工,工艺步骤简单可靠。整个加工过程不会影响硅片正面已有的CMOS电路,所以温度传感器可以采用post-CMOS 加工工艺进行加工,从而进一步的实现芯片的单片智能化,也可以降低芯片的尺寸和成本。Beneficial effects: the microelectronic temperature sensor provided by the present invention is a capacitive temperature sensor, so there is no current passing through the device, and there is no heating phenomenon of the device caused by the current existing in the piezoresistive temperature sensor during operation, so there is no irreversible The measurement error is small, so it also has the advantages of low heat loss and short dynamic response time. At the same time, compared with the use of surface silicon microstructures, the use of bulk silicon structure comb-shaped electrodes is to make the parallel plate capacitor composed of comb teeth have a larger capacitive plate area, so as to fill more graphene oxide temperature-sensitive materials. , to reduce the influence of device fringe capacitance, which can improve the sensitivity of the sensor. At the same time, compared with the surface micromechanical structure, the bulk silicon micromechanical structure has the characteristics of good mechanical properties and high stability. And the preparation method utilizes the Au-Au bonding of the silicon wafer and the glass, and the RIE and ICP etching processes can complete the processing of the sensor, and the process steps are simple and reliable. The entire processing process will not affect the existing CMOS circuit on the front of the silicon chip, so the temperature sensor can be processed by post-CMOS processing technology, so as to further realize the single-chip intelligentization of the chip, and also reduce the size and cost of the chip.
附图说明Description of drawings
图1是本发明制作的流程示意图;Fig. 1 is the schematic flow chart that the present invention makes;
图2是的本发明俯视图。Figure 2 is a top view of the present invention.
图中:单晶硅衬底1、Au 2、玻璃衬底3、Au 4、Au 引线5、氧化石墨烯溶液6、氧化石墨烯电容介质7、梳齿结构8。In the figure: single crystal silicon substrate 1, Au 2, glass substrate 3, Au 4, Au lead 5, graphene oxide solution 6, graphene oxide capacitor medium 7, comb structure 8.
具体实施方式detailed description
下面结合实例对本发明做具体说明:Below in conjunction with example the present invention is described in detail:
实施例1:Example 1:
如图1所示,本发明提供的微电子温度传感器通过以下步骤制备:As shown in Figure 1, the microelectronic temperature sensor provided by the present invention is prepared through the following steps:
(a)通过反应离子刻蚀RIE 工艺在单晶硅衬底1上刻蚀5μm 深的浅槽;(a) Etch a shallow trench with a depth of 5 μm on the single crystal silicon substrate 1 by reactive ion etching (RIE);
(b)在单晶硅衬底1上先溅射500Å 的Ti,作为Au 与Si 衬底之间的粘附材料;然后溅射1000Å 的Au 2,作为低温Au-Au 键合工艺的连接材料;(b) Sputter 500Å of Ti on the single crystal silicon substrate 1 as the adhesion material between Au and Si substrate; then sputter 1000Å of Au 2 as the connection material of the low-temperature Au-Au bonding process ;
(c)在Pyrex7740玻璃衬底3上先后先溅射500Å 的Ti 作为Au 与玻璃衬底之间的粘附材料,然后溅射1000Å 的Au 4,作为低温Au-Au 键合工艺的连接材料;(c) On the Pyrex7740 glass substrate 3, 500Å of Ti was firstly sputtered as the adhesion material between Au and the glass substrate, and then 1000Å of Au 4 was sputtered as the connection material of the low-temperature Au-Au bonding process;
(d)将玻璃衬底3和单晶硅衬底1进行低温Au-Au 键合,键合工艺温度约为350℃;(d) Low-temperature Au-Au bonding is performed on the glass substrate 3 and the single crystal silicon substrate 1, and the bonding process temperature is about 350°C;
(e)通过化学机械抛光CMP工艺从键合片背面将单晶硅衬底1减薄至40μm;(e) Thinning the monocrystalline silicon substrate 1 to 40 μm from the back of the bonded wafer by chemical mechanical polishing (CMP);
(f)通过深反应离子刻蚀DRIE工艺在单晶硅衬底1背面进行刻蚀,直至硅片被刻穿,形成单晶硅梳齿结构8;(f) Etching the back of the single crystal silicon substrate 1 by deep reactive ion etching (DRIE) until the silicon wafer is etched through to form a single crystal silicon comb structure 8;
(g)利用红胶将芯片粘贴在PCB基板上,然后将粘贴好芯片的基板放置于烘箱中,以一定的温度和时间烘干,使得红胶固化,再利用金丝球压焊机,将玻璃衬底3上的Au盘通过Au引线5引至PCB电路板上的焊点上;(g) Use red glue to paste the chip on the PCB substrate, then place the substrate pasted with the chip in an oven, and dry it at a certain temperature and time to make the red glue solidify, and then use the gold wire ball pressure welding machine to place the The Au plate on the glass substrate 3 is led to the solder joint on the PCB circuit board through the Au lead 5;
(h)用滴管取3 滴1.8mg/ml 的氧化石墨烯溶液6滴至单晶硅梳齿结构8上;(h) Use a dropper to take 3 drops of 1.8mg/ml graphene oxide solution 6 onto the single crystal silicon comb structure 8;
(i)最后将传感器置于45℃的温度箱中烘干1 小时,形成氧化石墨烯电容介质7。利用45~50℃的温度加热烘干过程可以避免氧化石墨烯材料中的含氧官能团因高温而分解。(i) Finally, place the sensor in a temperature oven at 45°C and dry it for 1 hour to form a graphene oxide capacitive dielectric 7 . Using the temperature of 45-50 ° C to heat and dry the process can prevent the oxygen-containing functional groups in the graphene oxide material from decomposing due to high temperature.
本传感器首先选取单晶硅衬底1,并在其上涂光刻胶,光刻梳齿结构8区域的窗口,然后采用ICP或RIE刻蚀硅形成1-10μm浅槽,去掉光刻胶后再重新氧化硅片,然后先后溅射厚度为0.05μm的Ti与厚度为0.1μm 的 Au 2并光刻,形成键合区域,同时在玻璃衬底3上建设相同材料与厚度的金属并光刻形成键合区域和引线压焊区域,将单晶硅衬底1和玻璃衬底3采用Au-Au键合,并且采用化学机械抛光使单晶硅衬底减薄至所需厚度,再采用光刻和ICP硅刻蚀单晶硅衬底释放整个结构,利用超声将氧化石墨烯材料溶于乙醇中制成氧化石墨烯溶液6,并涂敷至体硅MEMS叉齿结构上,待乙醇挥发后,氧化石墨烯电容介质7沉积在单晶硅梳齿结构8的缝隙中。The sensor first selects a single crystal silicon substrate 1, and coats it with photoresist, and photoresists the window of the comb structure 8 area, and then uses ICP or RIE to etch the silicon to form a shallow groove of 1-10 μm, after removing the photoresist Re-oxidize the silicon wafer, and then successively sputter Ti with a thickness of 0.05 μm and Au 2 with a thickness of 0.1 μm and perform photolithography to form a bonding area. Form the bonding area and the wire bonding area, bond the single crystal silicon substrate 1 and the glass substrate 3 with Au-Au, and use chemical mechanical polishing to thin the single crystal silicon substrate to the required thickness, and then use optical Engraving and ICP silicon etching single crystal silicon substrate to release the entire structure, using ultrasound to dissolve graphene oxide material in ethanol to make graphene oxide solution 6, and apply it to the bulk silicon MEMS fork structure, after the ethanol volatilizes , the graphene oxide capacitor dielectric 7 is deposited in the gaps of the single crystal silicon comb structure 8 .
氧化石墨烯电容式MEMS 温度传感器在温度为-70℃-40℃范围内,温度传感器的输出电容随着温度的增加呈现指数级增加;而在测试区间为40℃-50℃时,随着温度增加,测得的电容值迅速减小。初步分析认为在-70℃-40℃时,氧化石墨烯介电常数随着温度的增加而增加,但在测试区间为40℃-50℃时,随着温度增加,氧化石墨烯介电常数随着温度的增加而减小。Graphene oxide capacitive MEMS temperature sensor in the temperature range of -70°C-40°C, the output capacitance of the temperature sensor increases exponentially with the increase of temperature; when the test range is 40°C-50°C, with the temperature increases, the measured capacitance decreases rapidly. Preliminary analysis shows that the dielectric constant of graphene oxide increases with the increase of temperature at -70°C-40°C, but when the test range is 40°C-50°C, the dielectric constant of graphene oxide increases with the increase of temperature. Decreases with increasing temperature.
以上已以较佳实施例公开了本发明,然其并非用以限制本发明,凡采用等同替换或者等效变换方式所获得的技术方案,均落在本发明的保护范围之内。The above has disclosed the present invention with preferred embodiments, but it is not intended to limit the present invention, and all technical solutions obtained by adopting equivalent replacement or equivalent transformation methods fall within the protection scope of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610305557.5A CN105967136A (en) | 2016-05-10 | 2016-05-10 | Microelectronic temperature sensor and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610305557.5A CN105967136A (en) | 2016-05-10 | 2016-05-10 | Microelectronic temperature sensor and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105967136A true CN105967136A (en) | 2016-09-28 |
Family
ID=56992901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610305557.5A Pending CN105967136A (en) | 2016-05-10 | 2016-05-10 | Microelectronic temperature sensor and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105967136A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106768481A (en) * | 2017-01-10 | 2017-05-31 | 苏州大学 | A kind of Graphene suspension beam structure temperature measuring equipment |
CN106872063A (en) * | 2017-01-17 | 2017-06-20 | 中国电子科技集团公司第四十九研究所 | A kind of preparation method and application of tubulose tungsten oxide graphene composite material |
CN107131974A (en) * | 2017-05-08 | 2017-09-05 | 北京航空航天大学 | A kind of temperature probe comb with air-breathing branching rod structure |
CN107741285A (en) * | 2017-10-12 | 2018-02-27 | 奇酷互联网络科技(深圳)有限公司 | A kind of circuit board and temperature checking method |
CN108529553A (en) * | 2017-09-22 | 2018-09-14 | 中北大学 | A kind of graphene high-temp pressure sensor packaging method |
CN110596035A (en) * | 2019-09-10 | 2019-12-20 | 成都青洋电子材料有限公司 | Monocrystalline silicon finished product detection device and detection method |
CN111591952A (en) * | 2020-04-22 | 2020-08-28 | 北京大学 | MEMS piezoresistive pressure sensor and preparation method thereof |
CN111964800A (en) * | 2020-06-28 | 2020-11-20 | 中山大学 | Temperature sensor, preparation method thereof and sensing device applying temperature sensor |
CN112624031A (en) * | 2020-12-18 | 2021-04-09 | 北京航天控制仪器研究所 | MEMS structure with over-etching barrier layer and preparation method thereof |
CN114518179A (en) * | 2022-02-10 | 2022-05-20 | 中北大学 | High-precision graphene ultralow-temperature sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102359828A (en) * | 2011-07-12 | 2012-02-22 | 东南大学 | Micro-electronic temperature sensor and manufacturing process thereof |
CN102564624A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Micro-machine temperature sensor structure |
US20140103298A1 (en) * | 2012-10-15 | 2014-04-17 | The Trustees Of The Stevens Institute Of Technolog | Graphene-based films in sensor applications |
CN104390720A (en) * | 2014-12-03 | 2015-03-04 | 东南大学 | Graphene oxide based capacitive temperature sensor and production method thereof |
-
2016
- 2016-05-10 CN CN201610305557.5A patent/CN105967136A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102359828A (en) * | 2011-07-12 | 2012-02-22 | 东南大学 | Micro-electronic temperature sensor and manufacturing process thereof |
CN102564624A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Micro-machine temperature sensor structure |
US20140103298A1 (en) * | 2012-10-15 | 2014-04-17 | The Trustees Of The Stevens Institute Of Technolog | Graphene-based films in sensor applications |
CN104390720A (en) * | 2014-12-03 | 2015-03-04 | 东南大学 | Graphene oxide based capacitive temperature sensor and production method thereof |
Non-Patent Citations (1)
Title |
---|
CHUN-HUA CAI, ET AL.: ""High-performance Bulk Silicon Interdigital Capacitive Temperature Sensor Based on Graphene Oxide"", 《ELECTRONICS LETTERS》 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106768481A (en) * | 2017-01-10 | 2017-05-31 | 苏州大学 | A kind of Graphene suspension beam structure temperature measuring equipment |
CN106872063A (en) * | 2017-01-17 | 2017-06-20 | 中国电子科技集团公司第四十九研究所 | A kind of preparation method and application of tubulose tungsten oxide graphene composite material |
CN107131974A (en) * | 2017-05-08 | 2017-09-05 | 北京航空航天大学 | A kind of temperature probe comb with air-breathing branching rod structure |
CN107131974B (en) * | 2017-05-08 | 2019-08-23 | 北京航空航天大学 | A kind of temperature probe comb with air-breathing branching rod structure |
CN108529553A (en) * | 2017-09-22 | 2018-09-14 | 中北大学 | A kind of graphene high-temp pressure sensor packaging method |
CN107741285B (en) * | 2017-10-12 | 2020-05-19 | 奇酷互联网络科技(深圳)有限公司 | Circuit board and temperature detection method |
CN107741285A (en) * | 2017-10-12 | 2018-02-27 | 奇酷互联网络科技(深圳)有限公司 | A kind of circuit board and temperature checking method |
CN110596035A (en) * | 2019-09-10 | 2019-12-20 | 成都青洋电子材料有限公司 | Monocrystalline silicon finished product detection device and detection method |
CN111591952A (en) * | 2020-04-22 | 2020-08-28 | 北京大学 | MEMS piezoresistive pressure sensor and preparation method thereof |
CN111591952B (en) * | 2020-04-22 | 2024-03-26 | 北京大学 | MEMS piezoresistive pressure sensor and preparation method thereof |
CN111964800A (en) * | 2020-06-28 | 2020-11-20 | 中山大学 | Temperature sensor, preparation method thereof and sensing device applying temperature sensor |
CN112624031A (en) * | 2020-12-18 | 2021-04-09 | 北京航天控制仪器研究所 | MEMS structure with over-etching barrier layer and preparation method thereof |
CN114518179A (en) * | 2022-02-10 | 2022-05-20 | 中北大学 | High-precision graphene ultralow-temperature sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105967136A (en) | Microelectronic temperature sensor and preparation method thereof | |
CN102298075A (en) | Acceleration sensor chip with compound multiple-beam structure and manufacturing method thereof | |
CN103278270B (en) | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method | |
CN103335753B (en) | The ultra-miniature pressure sensor chip of si-glass base beam diaphragm structure and manufacture method | |
CN102998037B (en) | Dielectric isolation piezoresistive pressure sensor and method for manufacturing same | |
CN101329291B (en) | Gas sensor | |
CN104776951B (en) | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof | |
CN102298074B (en) | Hole-crack double-bridge type acceleration sensor chip and preparation method thereof | |
CN100439235C (en) | A method of manufacturing a pressure sensor silicon chip | |
CN104864988B (en) | MEMS pressure sensor of silicon island membrane structure and preparation method thereof | |
CN103471740B (en) | A kind of capacitive temperature sensor | |
CN101819214A (en) | Integrated anemograph based on ceramics wafer level package and preparation method thereof | |
CN105181231A (en) | Pressure sensor of packaging structure and preparation method thereof | |
CN103675042B (en) | CMOS MEMS capacitive humidity sensor | |
CN102980694A (en) | MEMS piezoresistive pressure transducer without strain membrane structure and manufacture method thereof | |
CN107673306A (en) | A kind of preparation method of MEMS pressure sensor | |
CN104237560A (en) | Acceleration sensor chip capable of resisting transverse effect and manufacturing method thereof | |
CN216559443U (en) | MEMS substrate and MEMS pressure sensor | |
CN105116019B (en) | A kind of inductance type MEMS humidity sensors and preparation method thereof | |
CN105300573B (en) | A kind of beam diaphragm structure piezoelectric transducer and preparation method thereof | |
CN106744651A (en) | A kind of condenser type microelectronics baroceptor and preparation method thereof | |
CN107167630A (en) | A kind of design of MEMS acceleration transducers based on flexible material and preparation method thereof | |
CN104061967B (en) | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof | |
CN104280186B (en) | The preparation of temperature drift self compensation SOI pressure transducer and compensation method | |
CN102082105A (en) | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160928 |