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CN105958803A - Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof - Google Patents

Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof Download PDF

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Publication number
CN105958803A
CN105958803A CN201610342325.7A CN201610342325A CN105958803A CN 105958803 A CN105958803 A CN 105958803A CN 201610342325 A CN201610342325 A CN 201610342325A CN 105958803 A CN105958803 A CN 105958803A
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switching tube
sic jfet
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谢昊天
秦海鸿
朱梓悦
付大丰
徐华娟
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Nanjing University of Aeronautics and Astronautics
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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Abstract

本发明涉及常通型/常断型SiC JFET组合型桥臂功率电路及其控制方法，桥臂功率电路由常通型SiC JFET、常断型SiC JFET、图腾柱结构驱动电路及电流源驱动电路组成；其特点是：能够充分发挥常通型SiC JFET开关速度快及导通损耗小的优势，并利用常断型SiC JFET防止控制电路上电，驱动电路失电故障未提供栅极电压时的桥臂直通现象。常通型/常断型SiC JFET组合型桥臂功率电路可广泛应用于全桥电路及三相桥式电路等典型桥臂电路中。该组合型桥臂功率电路的优点主要体现在低导通损耗、低驱动损耗、快速开关能力及防止桥臂直通现象。

The invention relates to a normally-on/normally-off SiC JFET combined bridge arm power circuit and a control method thereof. The bridge arm power circuit is composed of a normally-on SiC JFET, a normally-off SiC JFET, a totem pole structure drive circuit, and a current source drive circuit. Composition; its characteristics are: it can give full play to the advantages of fast switching speed and small conduction loss of the normally-on SiC JFET, and use the normally-off SiC JFET to prevent the control circuit from being powered on. Bridge arm through phenomenon. The normally on/normally off SiC JFET combined bridge arm power circuit can be widely used in typical bridge arm circuits such as full bridge circuits and three-phase bridge circuits. The advantages of the combined bridge arm power circuit are mainly reflected in low conduction loss, low driving loss, fast switching capability and prevention of bridge arm through phenomenon.

Description

常通型 / 常断型 SiC JFET 组合型桥臂功率电路及其控制方法 Normal type / Normally off SiC JFETs Combined bridge arm power circuit and its control method

技术领域 technical field

本发明涉及一种常通型/常断型SiC JFET组合型桥臂功率电路及其控制方法，尤其是涉及一种高速开关、低导通损耗和防止桥臂直通的桥臂功率电路，属电力电子领域。 The invention relates to a normally-on/normal-off SiC JFET combined bridge arm power circuit and its control method, in particular to a bridge arm power circuit with high-speed switching, low conduction loss and prevention of bridge arm straight-through. electronics field.

背景技术 Background technique

SiC JFET是碳化硅结型场效应晶体管，有常通（normally-on）和常断（normally-off）两种类型。近年来，常通型SiC JFET以低导通电阻、快开关速度、耐高温、热稳定性高等优势成为提高功率变换器效率和功率密度的理想器件。但是，常通型SiC JFET在没有驱动信号时即处于导通状态，在广泛使用的电压源型变换器中容易造成桥臂的直通危险。相比常通型SiC JFET，常断型SiC JFET在其导通时必须维持一定的栅极驱动电流，以获得较小的通态电阻，驱动电路损耗相对较大。目前文献中针对常通型SiC JFET驱动构成的桥臂电路，提出几种桥臂直通保护的方案。图1为其中的典型方案，可见这类桥臂直通保护方案电路复杂程度高，也大大增加了成本。 SiC JFETs are silicon carbide junction field effect transistors, available in two types: normally-on and normally-off. In recent years, the normally-on SiC JFET has become an ideal device for improving the efficiency and power density of power converters due to its advantages of low on-resistance, fast switching speed, high temperature resistance, and high thermal stability. However, the normally-on SiC JFET is in the on state when there is no driving signal, and it is easy to cause the danger of shoot-through of the bridge arm in the widely used voltage source converter. Compared with the normally-on SiC JFET, the normally-off SiC JFET must maintain a certain gate drive current when it is turned on, so as to obtain a smaller on-state resistance, and the loss of the driving circuit is relatively large. In the current literature, several bridge arm shoot-through protection schemes are proposed for the bridge arm circuit formed by normally-on SiC JFET drive. Figure 1 shows a typical solution. It can be seen that this kind of bridge arm through protection solution has high circuit complexity and greatly increases the cost.

发明内容 Contents of the invention

本发明所要解决的技术问题是针对前述背景技术中的缺陷和不足，提供一种基于常通型/常断型SiC JFET的组合型桥臂功率电路，充分发挥常通型SiC JFET开关速度快及导通损耗小的优势，并利用常断型SiC JFET防止控制电路上电，驱动电路失电故障未提供栅极电压时的桥臂直通现象。 The technical problem to be solved by the present invention is to provide a combined bridge arm power circuit based on normally-on/normally-off SiC JFET for the defects and insufficiencies in the aforementioned background technology, which can fully utilize the fast switching speed of normally-on SiC JFET and The advantage of small conduction loss, and the use of normally off SiC JFET to prevent the control circuit from being powered on, and the bridge arm through phenomenon when the drive circuit loses power and fails to provide the gate voltage.

本发明提供的常通型/常断型SiC JFET组合型桥臂功率电路，包括常通型SiC JFET、常断型SiC JFET、图腾柱结构驱动电路及电流源驱动电路；所述的图腾柱结构驱动电路及由开关管和驱动电阻连接而成；所述的电流源驱动电路由开关管、驱动电阻、二极管及电感连接而成。 The normally-on/normally-off SiC JFET combined bridge arm power circuit provided by the present invention includes a normally-on SiC JFET, a normally-off SiC JFET, a totem-pole structure drive circuit, and a current source drive circuit; the totem-pole structure The drive circuit is formed by connecting a switch tube and a drive resistor; the current source drive circuit is formed by connecting a switch tube, a drive resistor, a diode and an inductance.

在常通型SiC JFET栅极和供电电源间设有图腾柱结构驱动电路；在常断型SiC JFET栅极与供电电源间设有电流源驱动电路。 A totem pole structure driving circuit is provided between the normally-on SiC JFET gate and the power supply; a current source driving circuit is provided between the normally-off SiC JFET gate and the power supply.

所述图腾柱结构驱动电路包括第一开关管S1、第二开关管S2、第一驱动电阻R g1；第一高压源VCC1依次顺向连接第一开关管S1、第二开关管S2、第一低压源VEE1；第一开关管S1、第二开关管S2的中间点连接第一驱动电阻R g1的一端，第一驱动电阻R g1的另一端连接常通型SiC JFET的栅极。 The totem pole structure driving circuit includes a first switching tube S 1 , a second switching tube S 2 , and a first driving resistor R g1 ; the first high voltage source V CC1 is sequentially connected to the first switching tube S 1 and the second switching tube S 2 , the first low-voltage source V EE1 ; the middle point of the first switching tube S 1 and the second switching tube S 2 is connected to one end of the first driving resistor R g1 , and the other end of the first driving resistor R g1 is connected to a normally-on SiC Gate of the JFET.

所述电流源驱动电路包括第三开关管S3、第四开关管S4、第五开关管S5、第六开关管S6、第二驱动电阻R g2、第三驱动电阻R g3 、二极管D及电感L； The current source drive circuit includes a third switch tube S 3 , a fourth switch tube S 4 , a fifth switch tube S 5 , a sixth switch tube S 6 , a second drive resistor R g2 , a third drive resistor R g3 , a diode D and inductance L;

第二高压源VCC2依次顺向连接第二驱动电阻R g2、第三开关管S3、第四开关管S4、第二低压源VEE2；第三开关管S3、第四开关管S4的中间点连接第三驱动电阻R g3的一端，第三驱动电阻R g3的另一端连接常断型SiC JFET的栅极； The second high voltage source V CC2 is sequentially connected to the second driving resistor R g2 , the third switching tube S 3 , the fourth switching tube S 4 , and the second low voltage source V EE2 ; the third switching tube S 3 and the fourth switching tube S The middle point of 4 is connected to one end of the third driving resistor R g3 , and the other end of the third driving resistor R g3 is connected to the gate of the normally-off SiC JFET;

第二高压源VCC2依次顺向连接第五开关管S5、第六开关管S6、第二低压源VEE2；第五开关管S5、第六开关管S6的中间点连接二极管D的正极，二极管D的负极连接电感L，电感L的另一端连接常断型SiC JFET的栅极。 The second high voltage source V CC2 is sequentially connected to the fifth switching tube S 5 , the sixth switching tube S 6 , and the second low voltage source V EE2 in sequence; the intermediate point of the fifth switching tube S 5 and the sixth switching tube S 6 is connected to the diode D The anode of the diode D, the cathode of the diode D is connected to the inductor L, and the other end of the inductor L is connected to the gate of the normally-off SiC JFET.

常通型/常断型SiC JFET组合型桥臂功率电路的控制方法，其特征是，导通第一开关管S1，第一高压源VCC1降低导通损耗；导通第二开关管S2，第一低压源VEE1及较低的第一驱动电阻R g1使常通型SiC JFET得到较开关速度； The control method of the normally-on/normal-off SiC JFET combined bridge arm power circuit is characterized in that the first switching tube S 1 is turned on, the first high voltage source V CC1 reduces the conduction loss; the second switching tube S is turned on 2. The first low-voltage source V EE1 and the lower first drive resistor R g1 enable the normally-on SiC JFET to obtain a faster switching speed;

导通第四开关管S4、第五开关管S5导通，驱动电压为第二低压源VEE2，常断型SiC JFET关断，电感L在开通前储能；导通第三开关管S3、第五开关管S5，驱动电压为第二高压源VCC2，电感L向常断型SiC JFET栅极提供峰值驱动电流；当电感L放电完成后，第二高压源VCC2通过第二驱动电阻R g2与第三驱动电阻R g3提供稳态电流。 The fourth switching tube S 4 and the fifth switching tube S 5 are turned on, the driving voltage is the second low-voltage source V EE2 , the normally-off SiC JFET is turned off, and the inductor L stores energy before turning on; the third switching tube is turned on S 3 , the fifth switch tube S 5 , the driving voltage is the second high voltage source V CC2 , and the inductor L provides the peak driving current to the gate of the normally-off SiC JFET; when the discharge of the inductor L is completed, the second high voltage source V CC2 passes through the second high voltage source The second driving resistor R g2 and the third driving resistor R g3 provide steady current.

本发明的一种常通型/常断型SiC JFET混合桥臂驱动电路及其控制方法，可同时解决以下三方面问题：（1）实现高速开关能力；（2）能够有效地减小开关器件的导通损耗、开关损耗及驱动损耗；（3）无需额外的保护电路防止未提供驱动电压时的桥臂直通现象。 A normally-on/normal-off SiC JFET hybrid bridge arm drive circuit and its control method of the present invention can solve the following three problems at the same time: (1) Realize high-speed switching capability; (2) Can effectively reduce the switching device The conduction loss, switching loss and driving loss; (3) no additional protection circuit is required to prevent the bridge arm through phenomenon when the driving voltage is not provided.

附图说明 Description of drawings

图1是现有技术中的常通型/常断型SiC JFET组合型桥臂功率电路结构图； FIG. 1 is a structural diagram of a normally-on/normal-off SiC JFET combined bridge arm power circuit in the prior art;

图2是本发明常通型/常断型SiC JFET组合型桥臂功率电路图； Fig. 2 is a normally-on/normal-off SiC JFET combined bridge arm power circuit diagram of the present invention;

图3是本发明中辅助开关管及常通型/常断型SiC JFET驱动电压时序图； Fig. 3 is a timing diagram of driving voltage of the auxiliary switch tube and normally-on/normal-off SiC JFET in the present invention;

图中：Q1-常通型SiC JFET，Q2-常断型SiC JFET，L-常断型SiC JFET的续流电感，D-防反流二极管，S1至S6-第一至第六开关管、Rg1-第一驱动电阻即常通型SiC JFET的驱动电阻，Rg2-第二驱动电阻即上拉电阻，Rg3-第三驱动电阻即常断型SiC JFET的驱动电阻； In the figure: Q 1 - normally on SiC JFET, Q 2 - normally off SiC JFET, L - freewheeling inductance of normally off SiC JFET, D - anti-reflux diode, S 1 to S 6 - first to second Six switch tubes, R g1 - the first drive resistor is the drive resistor of the normally-on SiC JFET, R g2 - the second drive resistor is the pull-up resistor, R g3 - the third drive resistor is the drive resistor of the normally-off SiC JFET;

VEE1、VEE2-第一、第二低压源，VCC1、VCC2-第一、第二高压源。 V EE1 , V EE2 - first and second low voltage sources, V CC1 , V CC2 - first and second high voltage sources.

具体实施方式 detailed description

本发明提供常通型/常断型SiC JFET组合型桥臂功率电路及其控制方法，为使本发明的目的，技术方案及效果更加清楚，明确，以及参照附图并举实例对本发明进一步详细说明。应当理解，此处所描述的具体实施仅用以解释本发明，并不用于限定本发明。 The present invention provides a normally-on/normal-off SiC JFET combined bridge arm power circuit and its control method. In order to make the purpose of the present invention, technical solutions and effects clearer and clearer, the present invention is further described in detail with reference to the accompanying drawings and examples . It should be understood that the specific implementations described here are only used to explain the present invention, not to limit the present invention.

实施例 Example

本发明所涉及的常通型/常断型SiC JFET组合型桥臂功率电路，如图2所示，包括常通型SiC JFET、常断型SiC JFET、图腾柱结构驱动电路及电流源驱动电路；所述的图腾柱结构驱动电路及由开关管和驱动电阻连接而成；所述的电流源驱动电路由开关管、驱动电阻、二极管及电感连接而成。 The normally-on/normally-off SiC JFET combined bridge arm power circuit involved in the present invention, as shown in Figure 2, includes a normally-on SiC JFET, a normally-off SiC JFET, a totem pole structure drive circuit, and a current source drive circuit ; The totem pole structure drive circuit is formed by connecting a switch tube and a drive resistor; the current source drive circuit is formed by connecting a switch tube, a drive resistor, a diode and an inductor.

在常通型SiC JFET栅极和供电电源间设有图腾柱结构驱动电路；在常断型SiC JFET栅极与供电电源间设有电流源驱动电路。 A totem pole structure driving circuit is provided between the normally-on SiC JFET gate and the power supply; a current source driving circuit is provided between the normally-off SiC JFET gate and the power supply.

具体的说，所述图腾柱结构驱动电路包括第一开关管S1、第二开关管S2、第一驱动电阻R g1；第一高压源VCC1依次顺向连接第一开关管S1、第二开关管S2、第一低压源VEE1；第一开关管S1、第二开关管S2的中间点连接第一驱动电阻即常通型SiC JFET的驱动电阻R g1的一端，常通型SiC JFET的驱动电阻R g1的另一端连接常通型SiC JFET的栅极。 Specifically, the totem pole structure drive circuit includes a first switch tube S 1 , a second switch tube S 2 , and a first drive resistor R g1 ; the first high voltage source V CC1 is sequentially connected to the first switch tube S 1 , The second switching tube S 2 and the first low-voltage source V EE1 ; the middle point of the first switching tube S 1 and the second switching tube S 2 is connected to one end of the first driving resistor, that is, the driving resistor R g1 of the normally-on SiC JFET. The other end of the drive resistor R g1 of the pass-through SiC JFET is connected to the gate of the normally-turn SiC JFET.

所述电流源驱动电路包括第三开关管S3、第四开关管S4、第五开关管S5、第六开关管S6、第二驱动电阻即上拉电阻R g2、第三驱动电阻即常断型SiC JFET的驱动电阻R g3 、防返流二极管D及常断型SiC JFET的续流电感L； The current source drive circuit includes a third switch tube S 3 , a fourth switch tube S 4 , a fifth switch tube S 5 , a sixth switch tube S 6 , a second drive resistor, that is, a pull-up resistor R g2 , a third drive resistor That is, the drive resistor R g3 of the normally-off SiC JFET , the anti-backflow diode D and the freewheeling inductance L of the normally-off SiC JFET;

第二高压源VCC2依次顺向连接上拉电阻R g2、第三开关管S3、第四开关管S4、第二低压源VEE2；第三开关管S3、第四开关管S4的中间点连接常断型SiC JFET的驱动电阻R g3的一端，常断型SiC JFET的驱动电阻R g3的另一端连接常断型SiC JFET的栅极； The second high voltage source V CC2 is sequentially connected to the pull-up resistor R g2 , the third switching tube S 3 , the fourth switching tube S 4 , and the second low voltage source V EE2 ; the third switching tube S 3 and the fourth switching tube S 4 The middle point of is connected to one end of the drive resistor R g3 of the normally-off SiC JFET, and the other end of the drive resistor R g3 of the normally-off SiC JFET is connected to the gate of the normally-off SiC JFET;

第二高压源VCC2依次顺向连接第五开关管S5、第六开关管S6、第二低压源VEE2；第五开关管S5、第六开关管S6的中间点连接防返流二极管D的正极，二极管D的负极连接常断型SiC JFET的续流电感L，常断型SiC JFET的续流电感L的另一端连接常断型SiC JFET的栅极。 The second high-voltage source V CC2 is sequentially connected to the fifth switching tube S 5 , the sixth switching tube S 6 , and the second low-voltage source V EE2 in sequence; the middle point of the fifth switching tube S 5 and the sixth switching tube S 6 is connected to the anti-flipback The anode of the current diode D, the cathode of the diode D is connected to the freewheeling inductance L of the normally-off SiC JFET, and the other end of the freewheeling inductance L of the normally-off SiC JFET is connected to the gate of the normally-off SiC JFET.

本实施例的工作原理为： The working principle of this embodiment is:

在图3所示的常通型SiC JFET图腾柱结构驱动电路中，当第一开关管S1导通时，驱动电压为第一高压源VCC1，能够降低导通损耗；当第二开关管S2导通时，第一低压源VEE1及较低的第一驱动电阻R g1使常通型SiC JFET能够得到较快的开关速度。当第四、第五开关管S4、S5导通时，驱动电压为负向电压第二低压源VEE2，常断型SiC JFET关断，常断型SiC JFET的续流电感L实现开通前的储能；当第三、第五开关管S3、S5导通时，驱动电压为第二高压源VCC2，电感向常断型SiC JFET栅极提供峰值驱动电流；当电感L放电完成后，第二高压源VCC2通过第二、第三驱动电阻R g2与R g3提供稳态电流。 In the normally-on SiC JFET totem pole structure drive circuit shown in Figure 3, when the first switch tube S 1 is turned on, the drive voltage is the first high-voltage source V CC1 , which can reduce the conduction loss; When S 2 is turned on, the first low-voltage source V EE1 and the lower first driving resistor R g1 enable the normally-on SiC JFET to obtain a faster switching speed. When the fourth and fifth switching tubes S 4 and S 5 are turned on, the driving voltage is the negative voltage of the second low-voltage source V EE2 , the normally-off SiC JFET is turned off, and the freewheeling inductance L of the normally-off SiC JFET is turned on previous energy storage; when the third and fifth switching tubes S 3 and S 5 are turned on, the driving voltage is the second high voltage source V CC2 , and the inductor provides peak driving current to the gate of the normally-off SiC JFET; when the inductor L discharges After completion, the second high voltage source V CC2 provides a steady state current through the second and third driving resistors R g2 and R g3 .

以上实施例只是本发明的一个具体的实施电路原理图，并不以此限定本发明的保护范围。任何基于本发明所做的等效变换电路，均属于本发明保护范围。 The above embodiment is only a specific implementation circuit principle diagram of the present invention, and does not limit the scope of protection of the present invention. Any equivalent conversion circuit based on the present invention belongs to the protection scope of the present invention.

Claims (5)

1. normal open type/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, including normal open type SiC JFET, nomal closed type SiC JFET, totem pole configuration drive circuit and driven with current sources circuit；Described totem pole configuration drive circuit and by switching tube and drive resistance be formed by connecting；Described driven with current sources electric routing switch pipe, driving resistance, diode and inductance connection form.
Normal open type the most according to claim 1/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, is provided with totem pole configuration drive circuit between normal open type SiC JFET grid and power supply；It is provided with driven with current sources circuit between nomal closed type SiC JFET grid and power supply.
Normal open type the most according to claim 2/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, described totem pole configuration drive circuit includes the first switching tube S1, second switch pipe S2, first drive resistanceR g1；First high-voltage power supply VCC1The most forward connect the first switching tube S1, second switch pipe S2, the first low pressure source VEE1；First switching tube S1, second switch pipe S2Intermediate point connect first driving resistanceR g1One end, first drive resistanceR g1The other end connect normal open type SiC JFET grid.
Normal open type the most according to claim 2/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, described driven with current sources circuit includes the 3rd switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, second drive resistanceR g2, the 3rd drive resistanceR g3 、Diode D and inductance L；
Second high-voltage power supply VCC2The most forward connect the second driving resistanceR g2, the 3rd switching tube S3, the 4th switching tube S4, the second low pressure source VEE2；3rd switching tube S3, the 4th switching tube S4Intermediate point connect the 3rd driving resistanceR g3One end, the 3rd drive resistanceR g3The other end connect nomal closed type SiC JFET grid；
Second high-voltage power supply VCC2The most forward connect the 5th switching tube S5, the 6th switching tube S6, the second low pressure source VEE2；5th switching tube S5, the 6th switching tube S6Intermediate point connect the positive pole of diode D, the negative pole of diode D connects the grid that the other end of inductance L, inductance L connects nomal closed type SiC JFET.
The control method of normal open type the most according to claim 1/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, turn on the first switching tube S1, the first high-voltage power supply VCC1Reduce conduction loss；Conducting second switch pipe S2, the first low pressure source VEE1And the first relatively low driving resistanceR g1Normal open type SiC JFET is made to obtain switching speed faster；
Turn on the 4th switching tube S4, the 5th switching tube S5Conducting, driving voltage is the second low pressure source VEE2, nomal closed type SiC JFET turns off, inductance L energy storage before opening；Turn on the 3rd switching tube S3, the 5th switching tube S5, driving voltage is the second high-voltage power supply VCC2, inductance L provides peak drive current to nomal closed type SiC JFET grid；After inductance L has discharged, the second high-voltage power supply VCC2Resistance is driven by secondR g2Resistance is driven with the 3rdR g3Steady-state current is provided.
CN201610342325.7A 2016-05-23 2016-05-23 Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof Pending CN105958803A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106712474A (en) * 2016-12-16 2017-05-24 南京航空航天大学 Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof

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US20050225373A1 (en) * 2003-06-30 2005-10-13 Koichi Morita Semiconductor switch
CN102810973A (en) * 2011-05-31 2012-12-05 三垦电气株式会社 Gate driver
CN105009430A (en) * 2012-11-27 2015-10-28 雷比诺动力系统公司 Dc-dc high voltage converter

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Publication number Priority date Publication date Assignee Title
US20050225373A1 (en) * 2003-06-30 2005-10-13 Koichi Morita Semiconductor switch
CN102810973A (en) * 2011-05-31 2012-12-05 三垦电气株式会社 Gate driver
CN105009430A (en) * 2012-11-27 2015-10-28 雷比诺动力系统公司 Dc-dc high voltage converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106712474A (en) * 2016-12-16 2017-05-24 南京航空航天大学 Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof

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