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CN105896007B - A kind of microwave band-pass filter - Google Patents

A kind of microwave band-pass filter Download PDF

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Publication number
CN105896007B
CN105896007B CN201610332749.5A CN201610332749A CN105896007B CN 105896007 B CN105896007 B CN 105896007B CN 201610332749 A CN201610332749 A CN 201610332749A CN 105896007 B CN105896007 B CN 105896007B
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groove
metal
strip
pass filter
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CN105896007A (en
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胡明哲
曾志伟
纪登辉
尹跃
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Liupanshui Normal University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/20327Electromagnetic interstage coupling
    • H01P1/20336Comb or interdigital filters

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The invention discloses a kind of compound groove microwave band-pass filters.Including dielectric-slab (1), dielectric-slab (1) is equipped with metal micro-strip (2), and the both sides of metal micro-strip (2) are equipped with metal (3);Compound groove is distributed in the metal micro-strip (2);The compound groove includes rectangle main groove (7), and sub- groove (8) is distributed on the side of rectangle main groove (7).The present invention has the characteristics that low transmission loss, avoids electromagnetic field strong reflection and anti-electromagnetic interference capability strong.

Description

一种微波带通滤波器A microwave bandpass filter

技术领域technical field

本发明涉及一种通讯领域用的滤波器,特别是一种具有复合凹槽结构的微波带通滤波器。The invention relates to a filter used in the communication field, in particular to a microwave bandpass filter with a compound groove structure.

背景技术Background technique

大数据时代,随着信息的需求量呈爆炸式的增长,移动通讯领域要求能制造出集成度更高的微波器件,然而随着高频集成电路尺寸的不断缩小,技术上出现了一系列问题,例如当微波器件的尺寸小到一定的程度,器件的电磁干扰噪声,RC延迟等达到极限导致器件工作不稳定,因此现有的微波器件已不能适应当今大规模微波集成电路的发展。In the era of big data, with the explosive growth of the demand for information, the field of mobile communication requires the manufacture of microwave devices with higher integration. However, as the size of high-frequency integrated circuits continues to shrink, a series of technical problems have emerged. For example, when the size of the microwave device is small to a certain extent, the electromagnetic interference noise and RC delay of the device reach the limit, resulting in unstable operation of the device. Therefore, the existing microwave devices cannot adapt to the development of today's large-scale microwave integrated circuits.

发明内容Contents of the invention

本发明的目的在于,提供一种微波带通滤波器。本发明具有低传输损耗、避免电磁场强烈反射和抗电磁干扰能力强的特点。The object of the present invention is to provide a microwave bandpass filter. The invention has the characteristics of low transmission loss, avoiding strong reflection of electromagnetic field and strong ability of resisting electromagnetic interference.

本发明的技术方案:一种微波带通滤波器,包括介质板,介质板的上设有金属微带,金属微带的两侧设有金属地;所述的金属微带上分布有复合凹槽;所述的复合凹槽包括矩形主凹槽,矩形主凹槽的侧边上分布有子凹槽。The technical solution of the present invention: a microwave bandpass filter, comprising a dielectric board, a metal microstrip is arranged on the dielectric board, and metal grounds are provided on both sides of the metal microstrip; composite concave grooves are distributed on the metal microstrip groove; the compound groove includes a rectangular main groove, and sub-grooves are distributed on the sides of the rectangular main groove.

前述的微波带通滤波器中,所述的金属微带包括共面波导段,共面波导段经过渡段与人工表面等离激元段连接;所述的人工表面等离激元段上分布有复合凹槽。In the aforementioned microwave bandpass filter, the metal microstrip includes a coplanar waveguide section, and the coplanar waveguide section is connected to the artificial surface plasmon section through a transition section; the artificial surface plasmon section is distributed Has compound grooves.

前述的微波带通滤波器中,所述的过渡段上设有深度渐变的复合凹槽。In the aforementioned microwave bandpass filter, the transition section is provided with compound grooves with gradually changing depths.

前述的微波带通滤波器中,所述的共面波导段上设有叉指结构。In the aforementioned microwave bandpass filter, the coplanar waveguide section is provided with an interdigitated structure.

前述的微波带通滤波器中,所述的矩形主凹槽的深度D1的取值为3~6mm,矩形主凹槽的宽度D2的取值为1.0~4.0mm,矩形主凹槽的周期p为3~8mm;所述的子凹槽的宽度D3的取值为0.1~0.5mm,子凹槽的深度D4的取值为0.1~1.0mm,子凹槽的周期p1取值为0.1~0.5mm。In the aforementioned microwave bandpass filter, the value of the depth D1 of the rectangular main groove is 3 to 6 mm, the value of the width D2 of the rectangular main groove is 1.0 to 4.0 mm, and the period p of the rectangular main groove is The value of the width D3 of the sub-groove is 0.1-0.5mm, the value of the depth D4 of the sub-groove is 0.1-1.0mm, and the value of the period p1 of the sub-groove is 0.1-0.5 mm.

前述的微波带通滤波器中,所述的叉指结构的中心起始位置z的取值为4~8mm,叉指结构的缝隙宽度w1的取值为0.1~0.5mm,叉指结构的单叉指长度L4的取值为2.0~5.0mm,叉指结构的单叉指宽度w2的取值为0.5~1.5mm,叉指结构的总长L5的取值为25~40mm。In the aforementioned microwave bandpass filter, the value of the center starting position z of the interdigital structure is 4-8mm, the value of the gap width w1 of the interdigital structure is 0.1-0.5mm, and the single interdigital structure The value of the interdigital length L 4 is 2.0-5.0 mm, the value of the single interdigital width w2 of the interdigital structure is 0.5-1.5 mm, and the value of the total length L 5 of the interdigital structure is 25-40 mm.

前述的微波带通滤波器中,处于过渡段位置的金属地的边缘为,满足Y=h+g+w*(exp(a*(X-L1)/L2)-1)/(expa-1)方程的曲线;其中a为曲线形状系数,其取值为5~20;h为金属微带宽度,其取值为8~15mm;g为金属微带与金属地间距,其取值为0.3~1mm,w为金属地宽度,其取值为20~35mm,L1为共面波导段的长度,其取值为5~15mm,L2为过渡段长度,取值为60~90mmm。In the aforementioned microwave band-pass filter, the edge of the metal ground at the transition section satisfies Y=h+g+w*(exp(a*(XL 1 )/L 2 )-1)/(expa-1 ) equation; where a is the curve shape coefficient, and its value is 5 to 20; h is the width of the metal microstrip, and its value is 8 to 15mm; g is the distance between the metal microstrip and the metal ground, and its value is 0.3 ~1mm, w is the width of the metal ground, its value is 20-35mm, L1 is the length of the coplanar waveguide section, its value is 5-15mm, L2 is the length of the transition section, its value is 60-90mm.

与现有技术相比,本发明通过在金属微带上设置一系列的复合凹槽,该复合凹槽包括矩形主凹槽,并在矩形主凹槽的侧边上分布有周期性排列的子凹槽,该子凹槽能有效地增强矩形主凹槽的分布电容及分布电感,使得电磁波在传输时被高度束缚在复合凹槽内部,从而大大降低了多条传输线传输时因间距太小而出现的电磁干扰,使得抗电磁干扰能力大大增强,同时也增强了高密度微波集成电路工作时的稳定性,不仅如此,因抗电磁干扰能力大大增强,本发明还能减小微波集成电路的金属微带间的间距以实现高的集成度和器件的小型化,因而能更好地适应当今大规模微波集成电路的发展。不仅如此,本发明还能通过调节复合凹槽的几何尺寸来调控微波传输线的截止频率和电磁场分布,同时调整电磁波的束缚效果,申请人在进行大量试验后发现,当D1在3~6mm间,D2在1.0~4.0mm间,p在3~8mm间、p1在0.1~0.5mm间、D3在0.1~0.5mm间、D4在0.1~1.0mm间时,复合凹槽对电磁场具有很好的束缚效果。Compared with the prior art, the present invention sets a series of composite grooves on the metal microstrip, the composite grooves include a rectangular main groove, and periodically arranged sub-grooves are distributed on the sides of the rectangular main groove. Groove, the sub-groove can effectively enhance the distributed capacitance and distributed inductance of the rectangular main groove, so that the electromagnetic wave is highly bound inside the composite groove during transmission, thus greatly reducing the transmission of multiple transmission lines due to too small spacing The electromagnetic interference that appears makes the anti-electromagnetic interference ability greatly enhanced, and also enhances the stability of the high-density microwave integrated circuit at the same time. Not only that, because the anti-electromagnetic interference ability is greatly enhanced, the present invention can also reduce the metal of the microwave integrated circuit. The spacing between microstrips can achieve high integration and miniaturization of devices, so it can better adapt to the development of today's large-scale microwave integrated circuits. Not only that, the present invention can regulate the cut-off frequency and electromagnetic field distribution of the microwave transmission line by adjusting the geometric dimensions of the composite groove, and at the same time adjust the confinement effect of electromagnetic waves. After conducting a large number of tests, the applicant found that when D1 is between 3 and 6mm, When D2 is between 1.0-4.0mm, p is between 3-8mm, p1 is between 0.1-0.5mm, D3 is between 0.1-0.5mm, and D4 is between 0.1-1.0mm, the composite groove has a good restraint on the electromagnetic field. Effect.

本发明在共面波导段(以下用其长度符号L1替代)和人工表面等离激元段(以下用其长度符号L3替代)间设置过渡段(以下用其长度符号L2替代),同时,在L2上还设有深度渐变的复合凹槽;通过该结构,实现了电磁场在L1和L3中传播的平稳过渡,避免了电磁场由准TEM模式转化为SSPPs模式传播时因模式和阻抗不匹配而出现的强烈的微波电场反射;申请人经过大量实验发现,当处于L2位置的金属地的边缘满足Y=h+g+w*(exp(a*(X-L1)/L2)-1)/(expa-1)方程,其中曲线形状系数a为5~20、金属微带宽度h为8~15mm、金属微带与金属地间距g为0.3~1mm、金属地宽度w为20~35mm、共面波导段长度为L1为5~15mm,过渡段长度L2为60~90mm时,电磁场传播的过渡最平稳。The present invention sets a transition section (replaced by its length symbol L2 below) between the coplanar waveguide section (replaced by its length symbol L 1 below) and the artificial surface plasmon segment (replaced by its length symbol L 3 below ) , At the same time, there is also a compound groove with gradually changing depth on L 2 ; through this structure, the smooth transition of electromagnetic field propagation in L 1 and L 3 is realized, and the time-dependent mode of electromagnetic field conversion from quasi-TEM mode to SSPPs mode is avoided. The strong microwave electric field reflection that does not match the impedance; the applicant has found through a large number of experiments that when the edge of the metal ground at the L 2 position satisfies Y=h+g+w*(exp(a*(XL 1 )/L 2 )-1)/(expa-1) equation, where the curve shape coefficient a is 5-20, the width h of the metal microstrip is 8-15mm, the distance g between the metal microstrip and the metal ground is 0.3-1mm, and the width of the metal ground is w When the length of the coplanar waveguide section is 5-15mm , and the length of the transition section L2 is 60-90mm , the transition of the electromagnetic field propagation is the most stable.

本发明还在共面波导段上设有叉指结构;通过叉指结构,能够在滤波器的下阻带产生一个衰减极点,提高滤波的矩形系数,并可用于调控滤波器的下阻带的带外特性。The present invention also has an interdigitated structure on the coplanar waveguide section; through the interdigitated structure, an attenuation pole can be generated in the lower stop band of the filter, the square coefficient of the filter can be improved, and it can be used to control the lower stop band of the filter. out-of-band features.

为了更好地证明本发明的有益效果,申请进行了如下实验:申请人设计一个微波带通滤波器样品,样品的参数如表1。In order to better prove the beneficial effects of the present invention, the applicant conducted the following experiments: the applicant designed a microwave bandpass filter sample, and the parameters of the sample are shown in Table 1.

表1微波滤波器样品各部分参数(单位:mm)Table 1 Parameters of each part of the microwave filter sample (unit: mm)

该样品的介质板采用介电常数为2.65的基片,对该样品的滤波特性曲线经时域有限差分计算如图4所示,图4中S11为滤波器反射系数,S21为滤波器传输系数,该样品为带通滤波,其中心频率为4.7451GHz,其-3dB通带为3.1504GHz到6.3398GHz,样品在整个通带内纹波抖动优于0.8dB,通带内反射小于-10dB。The dielectric plate of this sample adopts a substrate with a dielectric constant of 2.65. The filter characteristic curve of this sample is calculated by time-domain finite difference as shown in Figure 4. In Figure 4, S11 is the filter reflection coefficient, and S21 is the filter transmission coefficient. , the sample is a band-pass filter, its center frequency is 4.7451GHz, and its -3dB passband is from 3.1504GHz to 6.3398GHz. The ripple jitter of the sample is better than 0.8dB in the whole passband, and the reflection in the passband is less than -10dB.

为了说明本发明中过渡段的有益效果,申请人设计了一个对比滤波器:不含过渡段L2和深度渐变的复合凹槽的滤波器,其滤波器的介质板采用介电常数同为2.65,其他结构参数同表1。对其滤波特性曲线经时域有限差分计算如图5所示。由图5得知,该滤波器没有滤波效果,整个频段内其反射系数大大超过-10dB。由此可知,过渡段带有深度渐变的复合凹槽的滤波器具有良好地模式和阻抗匹配效果,使滤波器的反射特性得到有效改善。In order to illustrate the beneficial effects of the transition section in the present invention, the applicant has designed a comparative filter: the filter that does not contain the composite groove of transition section L 2 and depth gradual change, and the dielectric plate of its filter adopts the same dielectric constant of 2.65 , and other structural parameters are the same as in Table 1. The filter characteristic curve is calculated by time domain finite difference as shown in Fig. 5. It is known from Figure 5 that the filter has no filtering effect, and its reflection coefficient greatly exceeds -10dB in the entire frequency band. It can be seen that the filter with compound grooves with gradually changing depths in the transition section has a good mode and impedance matching effect, so that the reflection characteristics of the filter are effectively improved.

此外,叉指结构可在滤波器的下阻带产生一个衰减极点,该极点位置灵活可控,可方便地调控滤波器低频段的带外特性。图6示出,当无此插指结构时,下阻带(0-3GHz)的衰减极点消失的过程。本发明中插指结构开设于共面波导段的微带传输线上,并不增大滤波器的整体尺寸,便于滤波器的小型化。In addition, the interdigitated structure can generate an attenuation pole in the lower stop band of the filter. The position of the pole is flexible and controllable, and the out-of-band characteristics of the low frequency band of the filter can be adjusted conveniently. Fig. 6 shows that when there is no such interfinger structure, the attenuation pole of the lower stop band (0-3 GHz) disappears. In the present invention, the finger insertion structure is set on the microstrip transmission line of the coplanar waveguide section, which does not increase the overall size of the filter and facilitates the miniaturization of the filter.

图7为样品在4GHz频段工作时,复合凹槽周围的电场分布图,由图7可见,其电场高度束缚于复合凹槽内部,扩散较小。Figure 7 is the electric field distribution diagram around the composite groove when the sample works in the 4GHz frequency band. It can be seen from Figure 7 that the electric field is highly bound inside the composite groove and the diffusion is small.

附图说明Description of drawings

图1是本发明的结构示意图;Fig. 1 is a structural representation of the present invention;

图2是图1的A处的结构示意图;Fig. 2 is a structural schematic diagram of A place in Fig. 1;

图3是图1的B处的结构示意图;Fig. 3 is a schematic structural view at B of Fig. 1;

图4是样品的S参数曲线图。Fig. 4 is the S-parameter curve diagram of the sample.

图5是不采用过渡段的滤波器的S参数曲线图;Fig. 5 is the S parameter curve diagram of the filter that does not adopt transition section;

图6是不采用插指结构的滤波器的S参数曲线图;Fig. 6 is the S parameter graph of the filter that does not adopt interpolation structure;

图7是滤波器样品在4GHz频段工作时,复合凹槽法线方向电场分布图。Fig. 7 is a diagram of the electric field distribution in the normal direction of the composite groove when the filter sample works in the 4GHz frequency band.

附图中的标记为:1-介质板,2-金属微带,3-金属地,4-共面波导段,5-过渡段,6-人工表面等离激元段,7-矩形主凹槽,8-子凹槽,9-叉指结构。The marks in the drawings are: 1-dielectric plate, 2-metal microstrip, 3-metal ground, 4-coplanar waveguide section, 5-transition section, 6-artificial surface plasmon section, 7-rectangular main concave Groove, 8-sub-groove, 9-interdigitated structure.

具体实施方式Detailed ways

下面结合附图和实施例对本发明作进一步的说明,但并不作为对本发明限制的依据。The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

实施例。一种复合凹槽微波带通滤波器,构成如图1和2所示,包括介质板1,介质板1的上设有金属微带2,金属微带2的两侧设有金属地3;所述的金属微带2上分布有复合凹槽;所述的复合凹槽包括矩形主凹槽7,矩形主凹槽7的侧边上分布有子凹槽8。Example. A composite groove microwave bandpass filter, constituted as shown in Figures 1 and 2, comprising a dielectric plate 1, a metal microstrip 2 is arranged on the dielectric plate 1, and a metal ground 3 is provided on both sides of the metal microstrip 2; Composite grooves are distributed on the metal microstrip 2; the composite grooves include rectangular main grooves 7, and sub-grooves 8 are distributed on the sides of the rectangular main grooves 7.

前述的金属微带2包括共面波导段4,共面波导段4经过渡段5与人工表面等离激元段6连接;所述的人工表面等离激元段6上分布有复合凹槽。The aforementioned metal microstrip 2 includes a coplanar waveguide section 4, and the coplanar waveguide section 4 is connected to the artificial surface plasmon section 6 through a transition section 5; the artificial surface plasmon section 6 is distributed with composite grooves .

前述的过渡段5上设有深度渐变的复合凹槽。The aforementioned transition section 5 is provided with compound grooves with gradually changing depths.

前述的共面波导段4上设有叉指结构9。The aforementioned coplanar waveguide section 4 is provided with an interdigitated structure 9 .

前述的矩形主凹槽7的深度D1的取值为3~6mm,矩形主凹槽7的宽度D2的取值为1.0~4.0mm,矩形主凹槽7的周期p为3~8mm;所述的子凹槽8的宽度D3的取值为0.1~0.5mm,子凹槽8的深度D4的取值为0.1~1.0mm,子凹槽8的周期p1取值为0.1~0.5mm。The value of the depth D1 of the aforementioned rectangular main groove 7 is 3 to 6 mm, the value of the width D2 of the rectangular main groove 7 is 1.0 to 4.0 mm, and the period p of the rectangular main groove 7 is 3 to 8 mm; The width D3 of the sub-groove 8 is 0.1-0.5 mm, the depth D4 of the sub-groove 8 is 0.1-1.0 mm, and the period p1 of the sub-groove 8 is 0.1-0.5 mm.

前述的叉指结构9的中心起始位置z的取值为4~8mm,叉指结构9的缝隙宽度w1的取值为0.1~0.5mm,叉指结构9的单叉指长度L4的取值为2.0~5.0mm,叉指结构9的单叉指宽度w2的取值为0.5~1.5mm,叉指结构9的总长L5的取值为25~40mm。The value of the center starting position z of the aforementioned interdigital structure 9 is 4-8 mm, the value of the gap width w1 of the interdigital structure 9 is 0.1-0.5 mm, and the value of the single interdigital length L4 of the interdigital structure 9 is The value is 2.0-5.0 mm, the value of the single finger width w2 of the interdigital structure 9 is 0.5-1.5 mm, and the value of the total length L 5 of the interdigital structure 9 is 25-40 mm.

前述的微波带通滤波器中,处于过渡段5位置的金属地3的边缘为,满足Y=h+g+w*(exp(a*(X-L1)/L2)-1)/(expa-1)方程的曲线;其中a为曲线形状系数,其取值为5~20;h为金属微带宽度,其取值为8~15mm;g为金属微带2与金属地3间距,其取值为0.3~1mm,w为金属地宽度,其取值为20~35mm,L1为共面波导段的长度,其取值为5~15mm,L2为过渡段长度,取值为60~90mmm。In the aforementioned microwave bandpass filter, the edge of the metal ground 3 at the position of the transition section 5 satisfies Y=h+g+w*(exp(a*(XL 1 )/L 2 )-1)/(expa -1) the curve of the equation; wherein a is the curve shape coefficient, and its value is 5 to 20; h is the width of the metal microstrip, and its value is 8 to 15mm; g is the distance between the metal microstrip 2 and the metal ground 3, and The value is 0.3~1mm, w is the width of the metal ground, the value is 20~35mm, L1 is the length of the coplanar waveguide section, the value is 5~15mm, L2 is the length of the transition section, the value is 60~ 90mmm.

本发明的工作原理:准TEM模式的电磁场由左边的共面波导段4经插指结构9的滤波,传输到过渡段5,在过渡段5中逐渐渐变为SSPPs模式的电磁场,且在过渡段5中准TEM模式和SSPPs模式的电磁场共存,当电磁场到达人工表面等离激元段6时,完全转化为SSPPs模式的电磁场,并在L3进行传输,传输后SSPPs模式电磁场又经过右边的过渡段转化为准TEM模式的电磁场由右边的插指结构和共面波导段输出。当电磁场在共面波导段4传播,该段内电磁场的模式为准TEM模式,该模式电磁场被束缚在共面波导段4与金属地3间的介质板内;在过渡段5传播时,该段内准TEM模式与SSPPs模式共存,其中准TEM模式电磁场被束缚在过渡段5与金属地3间的介质板内,SSPPs模式电磁场被束缚在复合凹槽内部;在L3进行传播时,该段内为SSPPs模式,该模式电磁场被束缚在复合凹槽内部。Working principle of the present invention: the electromagnetic field of the quasi-TEM mode is transmitted to the transition section 5 by the filter of the coplanar waveguide section 4 on the left through the finger structure 9, and gradually becomes the electromagnetic field of the SSPPs mode in the transition section 5, and in the transition section The electromagnetic fields of the quasi-TEM mode and the SSPPs mode coexist in 5. When the electromagnetic field reaches the artificial surface plasmon section 6, it is completely transformed into the electromagnetic field of the SSPPs mode, and is transmitted in L 3. After transmission, the electromagnetic field of the SSPPs mode passes through the transition on the right The electromagnetic field transformed into the quasi-TEM mode by the segment is output by the interfinger structure and the coplanar waveguide segment on the right. When the electromagnetic field propagates in the coplanar waveguide section 4, the mode of the electromagnetic field in this section is a quasi-TEM mode, and this mode electromagnetic field is bound in the dielectric plate between the coplanar waveguide section 4 and the metal ground 3; when the transition section 5 propagates, the The quasi-TEM mode and SSPPs mode coexist in the segment, and the electromagnetic field of the quasi-TEM mode is bound in the dielectric plate between the transition section 5 and the metal ground 3, and the electromagnetic field of the SSPPs mode is bound in the composite groove; when propagating in L 3 , the Inside the segment is the SSPPs mode, and the electromagnetic field of this mode is bound inside the composite groove.

Claims (5)

1. a kind of microwave band-pass filter, it is characterised in that:Including dielectric-slab(1), dielectric-slab(1)Be equipped with metal micro-strip (2), metal micro-strip(2)Both sides equipped with metal(3);The metal micro-strip(2)On compound groove is distributed with;Described answers It includes rectangle main groove to close groove(7), rectangle main groove(7)Side on sub- groove is distributed with(8);The metal micro-strip (2)Including co-planar waveguide section(4), co-planar waveguide section(4)Through changeover portion(5)With artificial surface phasmon section(6)Connection;It is described Artificial surface phasmon section(6)On compound groove is distributed with;The co-planar waveguide section(4)It is equipped with interdigital structure(9).
2. microwave band-pass filter according to claim 1, it is characterised in that:The changeover portion(5)It is equipped with depth The compound groove of gradual change.
3. microwave band-pass filter according to claim 1 or 2, it is characterised in that:The rectangle main groove(7)Depth The value for spending D1 is 3~6mm, rectangle main groove(7)Width D 2 value be 1.0~4.0mm, rectangle main groove(7)Week Phase p is 3~8mm;The sub- groove(8)Width D 3 value be 0.1~0.5mm, sub- groove(8)Depth D4 value For 0.1~1.0mm, sub- groove(8)1 value of period p be 0.1~0.5mm.
4. microwave band-pass filter according to claim 1, it is characterised in that:The interdigital structure(9)Center rise The value of beginning position z is 4~8mm, interdigital structure(9)Gap width w1 value be 0.1~0.5mm, interdigital structure(9)'s Single tine refers to length L4Value be 2.0~5.0mm, interdigital structure(9)Single tine finger widths w2 value be 0.5~1.5mm, fork Refer to structure(9)Overall length L5Value be 25~40mm.
5. microwave band-pass filter according to claim 1, it is characterised in that:In changeover portion(5)The metal of position (3)Edge be to meet Y=h+g+w* (exp (a* (X-L1)/L2) -1) curve of/(expa-1) equation;Wherein a is curved shape Shape coefficient, value are 5~20;H is metal micro-strip width, and value is 8~15mm;G is metal micro-strip(2)With metal (3)Spacing, value are 0.3~1mm, and for metal width, value are 20~35mm, L to w1For the length of co-planar waveguide section, Its value is 5~15mm, and L2 is transition section length, and value is 60~90mmm.
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