CN105870211B - 一种光学传感器封装结构及其制造方法 - Google Patents
一种光学传感器封装结构及其制造方法 Download PDFInfo
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- CN105870211B CN105870211B CN201610327789.0A CN201610327789A CN105870211B CN 105870211 B CN105870211 B CN 105870211B CN 201610327789 A CN201610327789 A CN 201610327789A CN 105870211 B CN105870211 B CN 105870211B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 208
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 12
- 238000004806 packaging method and process Methods 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 abstract description 10
- 238000004080 punching Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Landscapes
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610327789.0A CN105870211B (zh) | 2016-05-17 | 2016-05-17 | 一种光学传感器封装结构及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610327789.0A CN105870211B (zh) | 2016-05-17 | 2016-05-17 | 一种光学传感器封装结构及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105870211A CN105870211A (zh) | 2016-08-17 |
| CN105870211B true CN105870211B (zh) | 2017-06-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610327789.0A Active CN105870211B (zh) | 2016-05-17 | 2016-05-17 | 一种光学传感器封装结构及其制造方法 |
Country Status (1)
| Country | Link |
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| CN (1) | CN105870211B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106241723A (zh) * | 2016-08-31 | 2016-12-21 | 歌尔股份有限公司 | 一种光学芯片的封装结构及其制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200423414A (en) * | 2003-04-22 | 2004-11-01 | Kingpak Tech Inc | Image sensor packaging method in crossed wire bonding |
| CN102117842A (zh) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | 红外焦平面探测器封装窗口及其制作方法 |
| CN205789920U (zh) * | 2016-05-17 | 2016-12-07 | 歌尔股份有限公司 | 一种光学传感器封装结构 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009013112A1 (de) * | 2009-03-13 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Vielzahl von mikrooptoelektronischen Bauelementen und mikrooptoelektronisches Bauelement |
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2016
- 2016-05-17 CN CN201610327789.0A patent/CN105870211B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200423414A (en) * | 2003-04-22 | 2004-11-01 | Kingpak Tech Inc | Image sensor packaging method in crossed wire bonding |
| CN102117842A (zh) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | 红外焦平面探测器封装窗口及其制作方法 |
| CN205789920U (zh) * | 2016-05-17 | 2016-12-07 | 歌尔股份有限公司 | 一种光学传感器封装结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105870211A (zh) | 2016-08-17 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Applicant after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Applicant before: Goertek Inc. |
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| COR | Change of bibliographic data | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200609 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: F / F, phase II, Qingdao International Innovation Park, 1 Keyuan Weiyi Road, Laoshan District, Qingdao City, Shandong Province, 266104 Patentee after: Geer Microelectronics Co.,Ltd. Country or region after: China Address before: Room 103, 396 Songling Road, Laoshan District, Qingdao City, Shandong Province 266104 Patentee before: Goer Microelectronics Co.,Ltd. Country or region before: China |