CN105810834B - A kind of organic electroluminescence device - Google Patents
A kind of organic electroluminescence device Download PDFInfo
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- CN105810834B CN105810834B CN201410838217.XA CN201410838217A CN105810834B CN 105810834 B CN105810834 B CN 105810834B CN 201410838217 A CN201410838217 A CN 201410838217A CN 105810834 B CN105810834 B CN 105810834B
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Abstract
A kind of organic electroluminescence device of the present invention, including substrate, the organic electroluminescence cell being arranged on substrate, the organic electroluminescence cell includes first electrode layer, organic function layer and the second electrode lay for stacking gradually setting, and the first electrode layer is set close to the substrate；The organic electroluminescence device also includes the light removing layer being arranged between the substrate and the second electrode lay, it is provided with to change some not homogeneity interface zones of second electrode reflecting interface planarization in the smooth removing layer, the not homogeneity interface zone accounts for the 0.1 30% of the smooth removing layer area.The device of the present invention has higher definition while mirror-reflection is kept.
Description
Technical field
The present invention relates to field of organic electroluminescence, and in particular to a kind of high organic electroluminescence of smooth extraction efficiency
Part.
Background technology
By the development of nearly 30 years, (English full name was Organic Light Emitting to organic electroluminescence device
Device, referred to as OLED) as illumination of future generation and Display Technique, have that colour gamut is wide, response is fast, wide viewing angle, pollution-free, high
The advantages that contrast, planarization, a certain degree of application is obtained in illumination and display.Typical organic electroluminescence
Part generally comprises transparency carrier 1, first transparency electrode 3, second electrode 5 and is arranged on two interelectrode organic function layers
4.The negative electrode of usual bottom illuminating OLED is planar metal, has good reflecting effect.The reflecting surface can be answered multi-field
With such as vanity mirror etc..
Due to the application of phosphor material, its internal quantum efficiency has nearly reached the limiting value 100% of theory, but its outer quantum
Efficiency but only has 20% or so, restricts the light extraction efficiency that the principal element that external quantum efficiency further improves is device.In order to
Improve the light outgoing efficiency of OLED screen body, it will usually which design light takes out structure in vivo in screen.Such as scattering layer, the low-light grid of inside
Or outside scattering film, lens coating etc..Above-mentioned design can cause the serious diffusing reflection for shielding body surface face, so as to destroy screen body
Mirror effect.
CN103700783A discloses a kind of optical grating construction for being used for Organic Light Emitting Diode (OLED) light and taking out, in glass
Be provided with the lattice structure that high low-index material is alternately arranged composition between substrate and transparent anode, refraction materials it is transversal
Face is closed figure, wherein it is relative with glass substrate in a parallel to the while b contacted with glass substrate, and 0≤a≤b (b ≠
0)；The refractive index of the high-index material is not less than 1.8, and the refractive index of the low-index material is not more than 1.5.The patent
Application is that the light that the alternate optical grating construction of refractive index height takes out waveguide mode is added between glass substrate and OLED anodes, is adopted
Reduction total reflection is contacted with substrate with high-index material, so as to improve OLED or shield the efficiency of body.But the program is also
It is based primarily upon by grid, reduces total reflection scheme, grid solid matter, destroy screen body mirror effect.And need special refractive index choosing
Material, raw material selection are restricted.
Usual light removing layer is using optical textures such as scattering or gratings, by changing luminous direction, by device inside
Light extraction come out.Such as in CN03147098.X, light taking-up is improved by adding scattering particles；For another KR20110035792
Light taking-up is improved by changing surface topography；Also in Nature photonics | VOL 2 | in AUGUST 2008, Zuo Zheti
Go out and taken out using low refraction grid to improve light.Because above-mentioned is all the light for being totally reflected script from change light emission direction
Extract.But the change of light emission direction means the loss for shielding body surface face mirror effect.
In oled light reflection process, its loss includes reflective electrode surface plasmon modes, ITO and glass surface and is all-trans
Penetrate, glass and Air Interface total reflection etc..OLED light loss disabling mode includes surface plasmon modes, ITO/Glass interfaces
Total reflection and substrate/air surface are totally reflected three kinds, are specifically shown in light loss schematic diagram described in Fig. 8, wherein a represents ITO/Glass
Interface is totally reflected, and b represents surface plasmon modes light loss, and c represents substrate/air surface total reflection.Above-mentioned two parts of patent texts
Offer and be that solving ITO/Glass interface losses and substrate/air surface loses two kinds, loses for surface plasmon modes and studies
It is less.
CN200410008012, which discloses a kind of organic electroluminescent (EL) display device assembly, includes substrate, organic EL portions
Divide, light loss prevents layer and microgap layer.Organic EL portion includes first electrode layer, organic luminous layer and the second electrode lay, these
Layer is patterned and stacks on the upper surface of the substrate.Light loss prevents layer to be used to improve light injection efficiency.Described light takes out
The microgap layer that layer is filled or is evacuated using gas, it has multiple raised compositions of preset space length and predetermined altitude respectively
Diffraction grating, the figure section of diffraction grating is highly 50-5000nm, each projection can be not away from for 200nm-2000nm
Same shape, such as cylinder or polygonal pyramid body.The optical path change figure that the program is also is shown in Fig. 9, and its goal of the invention is based on reducing
Total reflection is set out, it is necessary to which structure is densely arranged.And refractive index has particular/special requirement, it is necessary to use the alternate refractive index of height,
Need to select high index of refraction material and low-refraction material respectively, have particular/special requirement to selection.
The content of the invention
It is existing Bright View body because surface plasma light loss causes display effect poor therefore, to be solved by this invention
The problem of, there is provided a kind of organic electroluminescence device, by being arranged on microcylinder light taking-up Rotating fields or being set on light removing layer
The mode of micropore is put so that the surface plasma light of device is fully extracted out, not only improves light extraction efficiency, additionally it is possible to
While keeping mirror-reflection, there is higher definition.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of organic electroluminescence device, including substrate, the organic electroluminescence cell that is arranged on substrate, it is described organic
Electroluminescence cell includes first electrode layer, organic function layer and the second electrode lay for stacking gradually setting, the first electrode
Layer is set close to the substrate；The organic electroluminescence device also includes being arranged between the substrate and the second electrode lay
Light removing layer, it is provided with to change some not homogeneity interface areas of second electrode reflecting interface planarization in the smooth removing layer
Domain, the not homogeneity interface zone account for the 0.1-30% of the smooth removing layer area.
The smooth removing layer is the microcylinder light removing layer that some microcylinders are formed, and is blank between the adjacent microcylinder
Region, the microcylinder form described in not homogeneity interface zone.
The smooth removing layer includes light and takes out bulk material and some micropores set in bulk material are taken out in light, described
Micropore form described in not homogeneity interface zone.
Preferably, the not homogeneity interface zone accounts for the 0.1-20% of the smooth removing layer area, it is preferable that 0.5-10%,
Most preferably 0.5-5%.
The microcylinder or micropore are through described light removing layer, and the central axis of the microcylinder or micropore is in institute
State substrate.
The cross section of the microcylinder or micropore is regular shape and/or irregular shape.
Beeline 0 between the adjacent microcylinder or micropore<d≤100μm.
The thickness of the smooth removing layer is 1-10000nm, preferably 10-3000nm.
The organic luminous layer includes hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer
In one layer or its combination；
The smooth removing layer is arranged on the substrate, first electrode, hole injection layer, hole transmission layer, luminescent layer, electronics
In transport layer, electron injecting layer and the second electrode lay between two layers of arbitrary neighborhood.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
The present inventor creatively seeks to solution surface plasmon modes light loss by substantial amounts of research
Scheme, i.e. daylighting removing layer set micropore to form not homogeneity interface zone using microcylinder structure or on light removing layer, described
Microcylinder or the area of micropore account for 0.1-30%, the preferably 0.1-20% of light-emitting area, be further preferably 0.5-10%, it is optimal
Select 0.5-5%.This is due to that surface plasmon modes light is propagated along reflective electrode surface, and lateral transport distance is big, only need to be
Break reflecting electrode flatness in larger space, it is possible to obtain preferable light and take out effect.Therefore composition not homogeneity circle set
The microcylinder in face region or the area accounting of micropore are considerably less, and optimal accounting scope is 0.5-5%, and single size is less than human eye
The corresponding minimum resolution size for using distance, so the extraneous light for entering screen body, most of to be reflected in the form of mirror-reflection
Go, preferably maintain the mirror effect of luminescent screen body.The intensive of direct improvement total reflection light outgoing of this and background technology dissipates
Penetrate layer or grid micro-structural is different.A large amount of test experiments checkings show that, using the device containing the light removing layer, its light takes out effect
Rate can improve more than 20%, and light-emitting area keeps the luminous mirror effects of OLED, while improve the purpose of light extraction efficiency.
In addition, material and refractive index etc. of the light removing layer of the present invention are without particular/special requirement, it is not necessary to special high refraction or
The material of low refraction material, so as to which selection is more extensive.
The organic electroluminescence device of the present invention on the premise of retaining and shielding body mirror effect, there is higher light to take out
Efficiency, have a wide range of applications, such as the splicing of display screen body, vanity mirror, the automobile tail light for needing particulate metal texture, OLED screen
Ornament lamp etc..
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein：
Fig. 1 is the structural representation of organic electroluminescence device of the present invention；
Fig. 2 is the structural representation of second embodiment of the invention；
Fig. 3 is the structural representation of third embodiment of the invention；
Fig. 4 is the cross-sectional view of microcylinder；
Fig. 5 is the cross-sectional view of another embodiment of microcylinder；
Fig. 6 is the light removing layer cross-sectional view for being provided with micropore；
Fig. 7 is the structural representation of the hexagonal arrangement of microcylinder；
Fig. 8 is that oled light loses pattern diagram；
Fig. 9 is prior art light path schematic diagram；
Reference is expressed as in figure：1- substrates, 2- first electrode layers, 3- microcylinder light removing layers, 4- organic function layers,
5- the second electrode lays, 6- microcylinders, the functional layers of 41- first, the functional layers of 42- second.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, the reality below in conjunction with accompanying drawing to the present invention
The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
Conversely, there is provided these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He areas can be exaggerated
The size and relative size in domain.It should be appreciated that when element such as layer, region or substrate are referred to as " formation " or " set
" another element " on " when, the element can be arranged directly on another element, or there may also be intermediary element.
On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, in the absence of intermediary element.
As shown in figs 1 to 6, a kind of organic electroluminescence device of the invention, including substrate 1, set on substrate 1
Organic electroluminescence cell, the organic electroluminescence cell include stacking gradually the first electrode layer 2 (anode layer) of setting, had
Machine functional layer 4 and the second electrode lay 5 (cathode layer), the first electrode layer are set close to the substrate；The organic electroluminescence hair
Optical device also includes the light removing layer being arranged between the substrate 1 and the second electrode lay 5, and use is provided with the smooth removing layer
To change some not homogeneity interface zones of second electrode reflecting interface planarization, the not homogeneity interface zone accounts for the light and taken
Go out aspect product 0.1-30%, preferably 0.1-20%, further preferably to 0.5-10%, most preferably 0.5-5%.The smooth removing layer
Position be not particularly limited, any between substrate and second electrode can be arranged between two layers, as shown in figure 1, described
Light removing layer is arranged between substrate 1 and first electrode layer 2；Shown in Fig. 2, the smooth removing layer is arranged on the He of organic function layer 4
Between first electrode layer 2.The organic function layer includes hole injection layer, hole transmission layer, luminescent layer, electron injecting layer and electricity
Sub- transport layer；The microcylinder light removing layer 3 is arranged between above-mentioned any two layers of interface.Shown in Fig. 3, the smooth removing layer
It is arranged between the first organic function layer 41 and the second organic function layer 42, the functional layer 42 of the first functional layer 41 and second is divided
It is not one kind at least in hole injection layer, hole transmission layer, luminescent layer, electron injecting layer and electron transfer layer, the first function
The functional layer 42 of layer 41 and second is combined as an organic function layer, and such as the first functional layer 41 includes hole injection layer, hole transmission layer,
Then the second functional layer 42 includes luminescent layer, electron injecting layer and electron transfer layer；As the first functional layer 41 include hole injection layer,
Hole transmission layer and luminescent layer, then the second functional layer 42 include electron injecting layer and electron transfer layer, this combination can also have it is more
Kind mapping mode, is repeated no more again.The thickness of the smooth removing layer is 1-10000nm, preferably 10-3000nm.
As shown in Figure 4 and Figure 5, the microcylinder light removing layer 3 that the smooth removing layer is formed for some microcylinders 6, adjacent institute
It is white space to state between microcylinder 6, and the microcylinder 6 forms the not homogeneity interface zone.The shape of cross section of microcylinder
Do not specially require, can be any regular shape or irregular shape, or the combination of regular shape and irregular shape.When
When microcylinder 6 is the cylinder shown in Fig. 6, radius r≤50 μm of institute's cylinder, between the adjacent center line of microcylinder 6
Spacing d≤100 μm.When the cross section of microcylinder 6 is the triangle shown in Fig. 5, the μ of the r of the radius of triangle circumcircle≤50
M, beeline d≤100 μm of the adjacent triangle.The cross-sectional area of the microcylinder 6 is light removing layer Integral luminous
The 0.1-30% of area, preferably 0.5-10%, most preferably 0.5-5%.The material that the microcylinder 6 can be selected does not limit especially
It is fixed, can be any transparent and easy patterned conductive material or insulating materials.Microcylinder structural area accounting is very small, then not
With the too many electric conductivity for considering material and light transmittance etc., any adjacent two layers that may be disposed between substrate and the second electrode lay it
Between.As another embodiment, take out bulk material as shown in fig. 6, the smooth removing layer includes light and take out body in light
Some micropores 7 set in material, the micropore 7 form the not homogeneity interface zone.Micropore 7 takes out through described light
Layer, its center line is perpendicular to the substrate 1.Light removing layer set location can also be between substrate and second electrode any phase
Between adjacent two layers.Microcellular structure is set on light removing layer, because material interface itself is larger, is such as arranged on ITO and glass
Surface, then select the higher material of light transmittance；ITO and organic layer interface are such as arranged on, then selection is saturating with certain electric conductivity
Bright material.Such as it is located at organic material interface, then selection has the material of corresponding transmittability preferable.
The organic electroluminescence device of the present invention is in preparation process, first electrode layer 1, the electricity of organic function layer 4 and second
The preparation of pole layer 5 is this area routine techniques, when depositing microcylinder light removing layer, can be deposited by using mask plate micro-
Cylinder.It is first to deposit light removing layer if setting micropore on light removing layer, then passes through etching mode again and form micropore 7.
As the other embodiment of the present invention, microcylinder light removing layer 3 can be multilayer.
For the technique effect of the checking present invention, inventor devises following comparative example and embodiment：
In experiment using etched special pattern ITO electro-conductive glass substrate as substrate, substrate is placed on containing cleaning fluid
Ultrasonic wave cleans in deionized water, and wash temperature is about 60 DEG C, then dries the substrate cleaned with infrared baking lamp, is put into steaming
Chamber pressure during organic layer, electron injecting layer and electrode A l. are deposited is deposited in plating chamber successively and is less than 5.0 × 10-3Pa. its
Middle organic layer be deposited first 80nm thickness N, N '-bis- (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-
Diamine (NPB) is used as hole transmission layer, tris (8-hydroxyquinolato) aluminum (Alq thick 30nm3) doping
The green glow dyestuff C545T that mass percent is 2% is used as luminescent layer, behind evaporation 30nm thickness As lq3As electron transfer layer.
The device architecture of wherein comparative example is：
Glass/ITO/NPB(80nm)/Alq3:2%C545T (30nm)/Alq3(30nm)/LiF(1nm)/Al(150nm)
Embodiment 1-3 each film layer preparation technology as above, simply prepares microtrabeculae shape structure sheaf in ITO and organic layer interface.
The microtrabeculae shape structure sheaf is prepared using coating transparent photomask glue, exposure, the mode of development.Cylindricality is arranged for ranks, and thickness is
50nm。
1 smooth removing layer of embodiment is arranged between ITO and organic function layer NPB, and the cross section of microcylinder 6 is triangle,
The cross-sectional area of all microcylinders 6 is the 3% of light removing layer entire area, and the distance between adjacent microcylinder d is 100 μm.
The device architecture of embodiment 1 is：
Glass/ITO/ triangle cylindricality removing layers (50nm)/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Embodiment 2：Light removing layer is arranged between ITO and NPB, and the cross section of microcylinder 6 is hexagon, all microcylinders
6 cross-sectional area is the 3% of light removing layer entire area, and the distance between adjacent microcylinder d is 100 μm.
The device architecture of embodiment 2 is：
Glass/ITO/ hexagonal cylindricality removing layers (50nm)/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Embodiment 3：Light removing layer is arranged between ITO and NPB, and the cross section of micropore 7 is circular, the horizontal stroke of all micropores 7
Sectional area is the 3% of light removing layer entire area, and the distance between adjacent cells 7 d is 100 μm.
The device architecture of embodiment 3 is：
Glass/ITO/ cylinders removing layer (50nm)/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3(30nm)/
LiF(1nm)/Al(150nm)。
The comparative example of table 1 and embodiment 1-3 the performance test results
Test result shows that after the use microcylinder light removing layer of device of the invention, light extraction efficiency can at least improve
More than 21%, embodiment 2 is even as high as 25.%.It can be seen that using the light-extraction layer, device efficiency is obviously improved.
Embodiment 4-7 each film layer preparation technology as above, simply prepares micro- column construction in ITO and glass substrate interface
Layer.The microtrabeculae shape structure sheaf is prepared using coating transparent photomask glue, exposure, the mode of development.
The device architecture of embodiment 4 is：
Glass/ cylinders removing layer (100nm)/ITO/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 3 μm, hexagonal side length is 80 μm, is highly 100nm, and area accounting is 0.5%.
The device architecture of embodiment 5 is：
Glass/ cylinders removing layer (100nm)/ITO/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 5 μm, hexagonal side length is 80 μm, is highly 100nm, and area accounting is 2.8%.
The device architecture of embodiment 6 is：
Glass/ cylinders removing layer (100nm)/ITO/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 10 μm, hexagonal side length is 80 μm, is highly 100nm, and area accounting is 5.66%.
The device architecture of embodiment 7 is：
Glass/ cylinders removing layer (100nm)/ITO/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 20 μm, hexagonal side length is 80 μm, is highly 100nm, and area accounting is 22.66%.
The embodiment 4-7 the performance test results of table 2
Being contrasted from upper table as can be seen that when area accounting is in 0.5-5.66%, device corresponds to high light extraction efficiency, and
Keep good mirror effect.When area accounting is up to 22.66%, the observation of device exiting surface has mist degree phenomenon.
Each film layer preparation technology of embodiment 8 as above, simply prepares microtrabeculae shape structure sheaf in ITO and organic layer interface.Should
It is prepared by the mode of the close mask vacuum evaporation of microtrabeculae shape structure sheaf semen collection.
The device architecture of embodiment 8 is：
Glass/ITO/ masks evaporation NPB removing layers (50nm)/NPB (80nm)/Alq3:2%C545T (30nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 10 μm, hexagonal side length is 100 μm.Highly it is 50nm.
Each film layer preparation technology of embodiment 9 as above, simply prepares microtrabeculae shape structure sheaf in organic layer and organic layer interface.
It is prepared by the mode of the close mask vacuum evaporation of the microtrabeculae shape structure sheaf semen collection.
The device architecture of embodiment 9 is：
Glass/ITO/NPB(80nm)/Alq3:2%C545T (30nm)/mask evaporating Al q3Removing layer (50nm)/Alq3
(30nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 10 μm, hexagonal side length is 100 μm.Highly it is 50nm.
Each film layer preparation technology of embodiment 10 as above, simply prepares microtrabeculae shape knot in organic layer and electron injection bed boundary
Structure layer.It is prepared by the mode of the close mask vacuum evaporation of the microtrabeculae shape structure sheaf semen collection.
The device architecture of embodiment 10 is：
Glass/ITO/NPB(80nm)/Alq3:2%C545T (30nm)/Alq3(30nm)/mask evaporating Al q3Removing layer
(50nm)/LiF(1nm)/Al(150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 10 μm, hexagonal side length is 100 μm.Highly it is 50nm.
Each film layer preparation technology of embodiment 11 as above, simply prepares microtrabeculae shape in electron injecting layer and metallic cathode interface
Structure sheaf.It is prepared by the mode of the close mask vacuum evaporation of the microtrabeculae shape structure sheaf semen collection.
The device architecture of embodiment 11 is：
Glass/ITO/NPB(80nm)/Alq3:2%C545T (30nm)/Alq3(30nm)/LiF (1nm)/mask evaporation
LiF removing layers (50nm)/Al (150nm)
Wherein microcylinder is cylinder, and the microcylinder is using the hexagon arrangement mode shown in Fig. 7, cylindrical radius
For 10 μm, hexagonal side length is 100 μm.Highly it is 50nm.
The embodiment 8-11 the performance test results of table 3
From upper table contrast as can be seen that the light removing layer is located at above-mentioned interface, it is respectively provided with good light and takes out performance, and shield
Body keeps good mirror effect.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in protection scope of the present invention.
Claims (12)
1. a kind of organic electroluminescence device, including substrate (1), the organic electroluminescence cell that is arranged on substrate (1), it is described
Organic electroluminescence cell includes first electrode layer (2), organic function layer (4) and the second electrode lay (5) for stacking gradually setting,
The first electrode layer is set close to the substrate；Characterized in that, the organic electroluminescence device also includes being arranged on institute
The light removing layer between substrate (1) and the second electrode lay (5) is stated, is provided with to change second electrode in the smooth removing layer anti-
Some not homogeneity interface zones of firing area face planarization, the not homogeneity interface zone account for the 0.1- of the smooth removing layer area
30%.
2. organic electroluminescence device according to claim 1, it is characterised in that the smooth removing layer is some microcylinders
(6) the microcylinder light removing layer (3) formed, be white space between the adjacent microcylinder (6), microcylinder (6) composition
The not homogeneity interface zone.
3. organic electroluminescence device according to claim 1, it is characterised in that the smooth removing layer includes light and takes out this
Body material and some micropores (7) for setting in light takes out bulk material, the micropore (7) form described in not homogeneity interface area
Domain.
4. according to any described organic electroluminescence devices of claim 1-3, it is characterised in that the not homogeneity interface zone
Account for the 0.1-20% of the smooth removing layer area.
5. organic electroluminescence device according to claim 4, it is characterised in that the area of the not homogeneity interface zone
Account for the 0.5-10% of the smooth removing layer area.
6. organic electroluminescence device according to claim 5, it is characterised in that the area of the not homogeneity interface zone
Account for the 0.5-5% of the smooth removing layer area.
7. the organic electroluminescence device according to Claims 2 or 3, it is characterised in that the microcylinder (6) or micropore
(7) through described light removing layer, the central axis of the microcylinder (6) or micropore (7) is in the substrate (1).
8. the organic electroluminescence device according to Claims 2 or 3, it is characterised in that the microcylinder (6) or micropore
(7) cross section is regular shape and/or irregular shape.
9. the organic electroluminescence device according to Claims 2 or 3, it is characterised in that the adjacent microcylinder (6) or micro-
Beeline 0 between hole (7)<d≤100μm.
10. the organic electroluminescence device according to Claims 2 or 3, it is characterised in that the thickness of the smooth removing layer is
1-10000nm。
11. organic electroluminescence device according to claim 9, it is characterised in that the thickness of the smooth removing layer is 10-
3000nm。
12. organic electroluminescence device according to claim 1, it is characterised in that the organic luminous layer includes hole
One layer in implanted layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer or its combination；
The smooth removing layer is arranged on the substrate (1), first electrode (2), hole injection layer, hole transmission layer, luminescent layer, electricity
In sub- transport layer, electron injecting layer and the second electrode lay (5) between two layers of arbitrary neighborhood.
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| CN101304058A (en) * | 2007-05-09 | 2008-11-12 | 清华大学 | led |
| CN101752472A (en) * | 2008-12-18 | 2010-06-23 | 财团法人工业技术研究院 | light emitting device |
| CN101882666A (en) * | 2010-06-01 | 2010-11-10 | 昆山维信诺显示技术有限公司 | An organic electroluminescent device |
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| CN103503571A (en) * | 2011-06-28 | 2014-01-08 | 松下电器产业株式会社 | organic electroluminescent element |
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| EP1603367B1 (en) * | 2003-03-12 | 2015-09-09 | Mitsubishi Chemical Corporation | Electroluminescence device |
| US7420323B2 (en) * | 2005-10-31 | 2008-09-02 | Osram Opto Semiconductors Gmbh | Electroluminescent apparatus having a structured luminescence conversion layer |
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| CN101304058A (en) * | 2007-05-09 | 2008-11-12 | 清华大学 | led |
| CN102165845A (en) * | 2008-09-25 | 2011-08-24 | Lg化学株式会社 | Efficient organic light emitting diode (OLED) and manufacturing method thereof |
| CN101752472A (en) * | 2008-12-18 | 2010-06-23 | 财团法人工业技术研究院 | light emitting device |
| CN101882666A (en) * | 2010-06-01 | 2010-11-10 | 昆山维信诺显示技术有限公司 | An organic electroluminescent device |
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