CN1057384C - Step array cathode vacuum microelectronic pressure sensor - Google Patents
Step array cathode vacuum microelectronic pressure sensor Download PDFInfo
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- CN1057384C CN1057384C CN 96107141 CN96107141A CN1057384C CN 1057384 C CN1057384 C CN 1057384C CN 96107141 CN96107141 CN 96107141 CN 96107141 A CN96107141 A CN 96107141A CN 1057384 C CN1057384 C CN 1057384C
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- cathode
- pressure sensor
- array
- anode
- vacuum microelectronic
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- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a step array cathode vacuum microelectronic pressure sensor which is composed of an anode pressure sensing film, a cathode, an insulation layer and a vacuum chamber, wherein the cathode has steps. The present invention is used for enhancing the sensitivity and the measuring range of the sensor.
Description
The invention belongs to sensor, particularly vacuum micro-electronics pressure sensor.
The primary structure of vacuum micro-electronics pressure sensor is made up of four parts.Pressure sensor 1 adopts metal film or silicon thin film as anode; Negative electrode 2 adopts an emission pointed cone array; Mutually insulated between anode and the negative electrode has insulation course 4 and vacuum chamber 3 (Fig. 1) to see J.C.Jiang et al, Tramsducers 91,238-240.The principle of work of sensor is: anode applies positive voltage with respect to negative electrode, forms accelerating field at cathode surface.When sensitive membrane 1 compressive deformation, cathode and anode spacing changes, and the cathode surface field intensity changes thereupon, thereby causes the emission of cathode electric current to change.When the cathode surface electric field is enough strong, negative electrode be emitted as field emission, its emission changes very responsive for field intensity, and the influence of factors such as temperature can be ignored in theory.Thereby vacuum micro-electronics pressure sensor have highly sensitive, temperature stability good and advantage such as radioresistance.
The objective of the invention is to propose a kind of step cathode vacuum microelectronic pressure sensor of high sensitivity wide-range.
Important feature of the present invention is high around negative electrode is promptly, and is middle low step-like.
The present invention is a step array cathode vacuum microelectronic pressure sensor by the structural change with the planar array cathode vacuum microelectronic pressure sensor, has improved the sensitivity and the range of sensor.
Accompanying drawing 1 is a planar array cathode vacuum microelectronic pressure sensor synoptic diagram.1 is the anode pressure sensitive membrane among the figure, and 2 is plane pointed cone array cathode, and 3 is vacuum chamber, and 4 is insulation course.Fig. 2 is the step array cathode vacuum microelectronic pressure sensor synoptic diagram.1 is the anode pressure sensitive membrane among the figure, and 2 is the pointed cone array cathode, and 3 is vacuum chamber, and 4 is insulation course, and 5 is recessed step.
Below in conjunction with accompanying drawing in detail the present invention is described in detail
For illustrating step array cathode, the factor that influences vacuum micro-electronics pressure sensor sensitivity and range once is discussed earlier than the planar array advantages of cathodes.
Sensitivity is mainly by the deformation behavior of pressure sensitive film and the emission characteristics decision of negative electrode.With regard to sensitive membrane, film is thin more, area is big more, easy more generation deformation during pressurized, and sensitivity is high more with regard to emission of cathode, and current density is big more, and sensitivity is high more.Improve anode voltage, reduce the negative electrode radius-of-curvature, dwindle the electric field intensity that cathode and anode spacing helps increasing cathode surface, thereby improve emission, reach the purpose that improves sensitivity.
For the sensitivity that makes sensor reaches best, anode sensitive membrane and negative electrode pointed cone will be tried one's best close, but must not make the two contact short circuit.The condition of restriction cathode and anode spacing is: guarantee normal operation of sensor, must not contact with negative electrode pointed cone surface when the external force effect of anode sensitive membrane down deformation takes place.Because the deformation size of anode film depends on the impressed pressure size, so sensor is subjected to the restriction of cathode and anode spacing to the measurement range of pressure.
Be not difficult to find out that by above analysis the cathode and anode spacing of vacuum micro-electronics pressure sensor directly influences the sensitivity and the pressure measurement range of sensor.In vacuum micro-electronics pressure sensor shown in Figure 1, reduce the sensitivity that cathode and anode spacing helps improving sensor, but the pressure measurement range of the too small inevitable limiting sensor of spacing, it is conflicting promptly improving sensitivity and range extension.In order to solve this contradiction, this patent has proposed a kind of new structure, as shown in Figure 2.The negative electrode of novel sensor has a step, and the emission pointed cone is distributed in about the step, and is low step-like between senior middle school around promptly described negative electrode is.And the emission pointed cone among Fig. 1 is to distribute at grade.
In order to realize the best operating condition of step array cathode pressure transducer, fibrous root be according to need carrying out appropriate design to the structure of sensor, comprising: the deflection during (1) anode pressure sensitive membrane 1 pressurized depends on material, thickness and the area of sensitive membrane; (2) area of the height of step and step frame encirclement and the ratio of the cathode array total area will design according to anode sensitive membrane deformation extent, and the length of side that general bench height is 1-20 μ m, recessed step is 1/4-3/4 with the ratio of the outer length of side of cathode array; (3) field intensity between the anode and cathode wants enough strong, makes negative electrode can produce the electronics emission, and the field intensity size depends primarily on the added voltage of anode and cathode, the radius-of-curvature of cathode and anode spacing and negative electrode pointed cone.Be a vacuum chamber between pressure sensitive film 1 and pointed cone array cathode 2, anode pressure sensitive membrane 1 has an insulation course 4 with 2 sealing-ins place of pointed cone array cathode.
Brief description step array pointed cone negative electrode making work.Its manufacture craft mainly comprises two parts: at first make step, make the pointed cone array up and down simultaneously at step then, specifically describe as follows:
(1) clean n＜100〉monocrystalline silicon piece.
(2) thermal oxide growth SiO
21000 dusts.
(3) low-pressure chemical vapor deposition (LPCVD) growth Si
3N
41000 dusts.
(4) photoetching step frame.
(5) reactive ion etching is removed the Si in the step frame
3N
4
(6) buffered hydrofluoric acid (BHF) is removed the SiO in the step frame
2
(7) remove photoresist.
(8) silicon in the step frame is carried out chemical corrosion and go out step.
(9) hydrofluorite (HF) is removed the remaining Si of sample surfaces
3N
4And SiO
2
(10) thermal oxide growth SiO
21000 dusts.
(11) low-pressure chemical vapor deposition (LPCVD) growth Si
3N
41000 dusts.
(12) at step photoetching array simultaneously up and down.
(13) reactive ion etching is removed the Si that is not subjected to the photoresist protection
3N
4
(14) buffered hydrofluoric acid (BHF) is removed the SiO that is not subjected to the photoresist protection
2
(15) remove photoresist.
(16) step silicon is up and down carried out chemical corrosion simultaneously and go out the silicon tip array.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96107141 CN1057384C (en) | 1996-07-12 | 1996-07-12 | Step array cathode vacuum microelectronic pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96107141 CN1057384C (en) | 1996-07-12 | 1996-07-12 | Step array cathode vacuum microelectronic pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1144333A CN1144333A (en) | 1997-03-05 |
| CN1057384C true CN1057384C (en) | 2000-10-11 |
Family
ID=5119548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96107141 Expired - Fee Related CN1057384C (en) | 1996-07-12 | 1996-07-12 | Step array cathode vacuum microelectronic pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1057384C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104142207B (en) * | 2014-08-05 | 2016-08-24 | 温州大学 | Vacuometer based on gas absorption and carbon nano tube field-emission principle and vacuum detecting method thereof |
-
1996
- 1996-07-12 CN CN 96107141 patent/CN1057384C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1144333A (en) | 1997-03-05 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |