CN105502407A - Silicon core used in polycrystalline silicon production and silicon core component thereof - Google Patents
Silicon core used in polycrystalline silicon production and silicon core component thereof Download PDFInfo
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- CN105502407A CN105502407A CN201610077033.5A CN201610077033A CN105502407A CN 105502407 A CN105502407 A CN 105502407A CN 201610077033 A CN201610077033 A CN 201610077033A CN 105502407 A CN105502407 A CN 105502407A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
The invention discloses a silicon core used in polycrystalline silicon production and a silicon core component thereof, and relates to the field of polycrystalline silicon production. The silicon core is formed by combining a plurality of vertical silicon strips which are arranged in a mutual parallel manner; a gap is reserved between every two adjacent silicon strips, so that reaction gas in a reduction furnace can pass through the gaps among the silicon strips; the cross section of the silicon core after combination is different from that of a conventional silicon core with a solid structure, and a larger crystal surface area is achieved while less silicon materials are used, so that the formation of polycrystalline silicon is accelerated. The silicon core used in polycrystalline silicon production and the silicon core component thereof have the advantages as follows: 1, the drawing and the combination of the silicon strips are simple, and the operation is convenient; 2, the production efficiency is high, and the final-period usage cost is low.
Description
[technical field]
The present invention relates to field of polysilicon production, relate to the silicon core and silicon core assembly thereof that use in a kind of polysilicon production process specifically.
[background technology]
Along with the development of photovoltaic (PV) industry, the usage quantity of polysilicon is increasing gradually.When producing polysilicon, majority utilizes reduction furnace to carry out polysilicon also original production, namely by the surface deposition polysilicon of chemical vapor deposition (CVD) method at silicon core.In the prior art, first three filled circles silicon cores or square silicon core are overlapped to form " Π " character form structure, then in reduction furnace, carry out reduction reaction.Described reduction reaction is carried out in an airtight reduction furnace.In reduction furnace, be first overlapped to form the loop line of some " Π " character form structure with silicon core, namely carry out " bridging ".Each loop line is made up of two perpendicular silicon cores and a horizontal silicon core.Be connected on respectively on two electrodes of furnace bottom by two of loop line perpendicular silicon cores, two electrodes connect the positive and negative electrode of direct supply respectively.
For convenience of description, in the present invention this silicon core molectron overlapped according to " Π " character form structure is called " silicon core assembly ".
One or more silicon core assembly is placed in reduction furnace, utilizes direct current to heat silicon core, add and hanker each and organize the silicon core assembly that overlapped and be namely equivalent to a large resistance.Then in airtight reduction furnace, pass into hydrogen and trichlorosilane, start the deposition of carrying out polysilicon.In reduction furnace, polysilicon can be deposited on the surface formation polycrystalline silicon rod of silicon core gradually.Polycrystalline silicon rod recycles Czochralski furnace and is drawn into silicon single crystal rod after fragmentation.
Prior art is when overlapping silicon core assembly, and normally used silicon core is the filled circles silicon core of diameter about 8mm or the square silicon core of 10 × 10mm that formed through Linear cut with silicon ingot.In reduction reaction process, the silicon of generation is constantly deposited on silicon wicking surface, and the surface-area of silicon core can be increasing, and reactant gas molecules also can increase the collision opportunity of depositional plane (silicon wicking surface) and quantity thereupon.When the sedimentation rate of unit surface is constant, the polysilicon amount that surface-area more then deposits also the more.Therefore overlap silicon core assembly time, use the diameter of silicon core larger, the growth efficiency of polysilicon is also higher.Comparatively speaking, production efficiency when using large silicon core not only can improve polycrystalline reduction, also can reduce production cost simultaneously.
For this reason, the applicant also once attempted to adopt large diameter solid silicon core.Large diameter solid silicon core no doubt can improve the productivity of reduction process, but the drawing of major diameter silicon core exists the low problem of production efficiency also.The diameter of silicon core is larger, and it draws also difficulty all the more, and the radical once drawn in stove is also restricted.In addition, the problems such as difficulty is large are punctured after adopting large diameter solid silicon core also to there is inconvenience transport, overlap joint.
In order to improve the production efficiency of polysilicon, GT Solar Inc. of the U.S. its patent No. be 200780015406.5, name is called in the patent documentation of " polysilicon deposition improved in CVD (Chemical Vapor Deposition) reactor " that disclosing a kind of cross section is circular hollow silicon core, substitute traditional thin rod by the tubular silicon filament that diameter is 50 millimeters, thus improve output.The full content of this file is used as reference in this patent.
Although adopt this hollow silicon core of above-mentioned patent can solve subproblem of the prior art, because the drawing of hollow silicon core has difficulties, therefore have not yet to see extensive enforcement.
For the problems referred to above, the applicant once submitted to a in first patent application on January 6th, 2016, application number is 201610002833.0.That application discloses a kind of technical scheme utilizing tabular or cylindric silicon strip composition hollow silicon core and subassembly thereof, the present invention is supplementing this earlier application.
[summary of the invention]
For above-mentioned the deficiencies in the prior art, the invention provides the silicon core and silicon core assembly thereof that use in a kind of polysilicon production process.
Silicon core of the present invention is mutually arranged the perpendicular silicon strip put side by side combined by some, and leave gap between each perpendicular silicon strip, the reactant gases be convenient in reduction furnace passes between silicon strip.Silicon core cross section after combination had both been different from the silicon core of traditional solid construction, also be different from No. 200780015406.5 patents of GT Solar Inc. of the U.S. and the applicant in the application number that on January 6th, 2016 submits to be the hollow structure silicon core disclosed in the patent application of 201610002833.0, referred to herein as the cylindricality silicon core of " semi-hollow structure ".
The perpendicular silicon strip that the present invention uses can be dull and stereotyped silicon strip, and also can be the silicon strip with profiled cross-section, such as " L " silicon strip or circular arc silicon strip can also be cylindrical silicon strips.
Perpendicular silicon strip is spaced a distance row side by side to put, make reactant gases can enter silicon core inner, this gap can reduce gradually and finally be made up in crystallisation process.
The cylindricality silicon core of described semi-hollow structure, the shape of cross section of its cylindricality can be circular or Polygons.
Present invention also offers the silicon core assembly used in a kind of production of polysilicon, this silicon core assembly is made up of the cylindricality silicon core of above-mentioned semi-hollow structure and upper locking mechanism and lower locking mechanism.Described lower locking mechanism is made up of a permanent seat, the upper surface of permanent seat offers hole or the draw-in groove of some and perpendicular silicon strip position and mating shapes, both adopt shrink-fit, be fixed on permanent seat, be connected the lower end of perpendicular silicon strip by electrode by means of permanent seat with silicon core.
In order to make permanent seat reuse, can be socketed a sheath in the outside of permanent seat, arrange at the upper surface of sheath and bore a hole with the silicon strip of hole on permanent seat or draw-in groove position and mating shapes, sheath is fastened on permanent seat.
Described upper locking mechanism is the one block of horizontal silicon plate being arranged on perpendicular silicon strip upper end, and arrange hole or the draw-in groove of shape and perpendicular silicon strip position and mating shapes at the lower surface of horizontal silicon plate, both adopt shrink-fit, and two groups of semi-hollow silicon cores connect and fix by horizontal silicon plate.
Adopt semi-hollow silicon core of the present invention and assembly thereof, larger crystal surface can be obtained with less silicon material and amass, thus accelerate the formation of polysilicon.
[accompanying drawing explanation]
Fig. 1 is the one-piece construction schematic diagram of a silicon core assembly of the present invention embodiment;
The cross sectional representation of Fig. 2 to be the shape of cross section be made up of dull and stereotyped silicon strip in the present invention be square semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 3 to be the shape of cross section be made up of dull and stereotyped silicon strip in the present invention be circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 4 to be the shape of cross section be made up of " L " silicon strip in the present invention be rectangular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 5 to be the shape of cross section be made up of circular arc silicon strip in the present invention be circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 6 to be the shape of cross section be made up of circular arc silicon strip in the present invention be square semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 7 to be the shape of cross section be made up of cylindrical silicon strip in the present invention be circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 8 to be the shape of cross section be made up of cylindrical silicon strip in the present invention be square semi-hollow cylindricality silicon core;
Fig. 9 is the axial sectional structure schematic diagram of sheath in the present invention;
Figure 10 is the structural representation of upper locking mechanism in the present invention;
The corresponding relation of the label in accompanying drawing and component title is: 1, horizontal silicon plate; 2, dull and stereotyped silicon strip; 3, permanent seat; 4, " L " silicon strip; 5, circular arc silicon strip; 6, cylindrical silicon strip; 7, silicon strip perforation; 8, sheath; 9, silicon strip draw-in groove.
[embodiment]
Below in conjunction with Figure of description, by specific embodiment, the present invention will be further described.
Fig. 1 is an embodiment of silicon core assembly of the present invention, and it illustrates the one-piece construction of silicon core assembly.Fig. 2 is the plan structure schematic diagram of Fig. 1.This silicon core assembly comprises horizontal silicon plate 1, dull and stereotyped silicon strip 2 and permanent seat 3.Dull and stereotyped silicon strip 2 is arranged side by side and put formation shape of cross section is foursquare hollow silicon core.Leave gap between dull and stereotyped silicon strip 2, make reactant gases can enter silicon core inner, this gap can reduce gradually and finally can be made up in crystallisation process.
The cross sectional representation of Fig. 3 to be the shape of cross section be made up of dull and stereotyped silicon strip in the present invention be circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 4 to be the shape of cross section be made up of " L " shape silicon strip in the present invention be rectangular semi-hollow cylindricality silicon core;
Fig. 5 be this practicality new in the shape of cross section that is made up of circular arc silicon strip be the cross sectional representation of circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 6 to be the shape of cross section be made up of circular arc silicon strip in the present invention be square semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 7 to be the shape of cross section be made up of cylindrical silicon strip in the present invention be circular semi-hollow cylindricality silicon core;
The cross sectional representation of Fig. 8 to be the shape of cross section be made up of cylindrical silicon strip in the present invention be square semi-hollow cylindricality silicon core.
Embodiment shown in Fig. 3-8 is substantially identical with the embodiment shown in Fig. 1-2, and its difference is only that used perpendicular silicon strip shape of cross section is different.This perpendicular silicon strip except plate shaped silicon strip can also be circular arc, " L " shape and columniform; The shape of cross section of the semi-hollow cylindricality silicon core be combined into by perpendicular silicon strip can also be circular except foursquare and other is polygonal.
Two semi-hollow cylindricality silicon cores can be linked together by upper and lower locking mechanism.Offer and the hole of perpendicular silicon strip position and mating shapes or draw-in groove at the upper surface of permanent seat 3, both adopt shrink-fit, are fixed on permanent seat 3 lower end of perpendicular silicon strip whereby.As shown in Figure 1.
Upper locking mechanism can be the one block of horizontal silicon plate 1 being arranged on perpendicular silicon strip upper end, hole or the silicon strip draw-in groove 9 of shape and perpendicular silicon strip position and mating shapes are set at the lower surface of horizontal silicon plate 1, both adopt shrink-fit, and the cylindricality silicon core of two groups of semi-hollows connects and fixes by horizontal silicon plate 1.As shown in Fig. 1 and Figure 10.
In order to make permanent seat reuse, can be socketed a sheath 8 in the outside of permanent seat, arrange at the upper surface of sheath 8 and bore a hole 7 with the silicon strip of hole on permanent seat or draw-in groove position and mating shapes, sheath is fastened on permanent seat.As shown in Figure 9.
More than just describe the present invention by means of several embodiment.Obviously, various distortion can also be made according to these embodiments, such as: the angle that " L " shape erects its both sides of silicon strip can adjust as the case may be; Except the perpendicular silicon strip of " L " tee section and circular section, can also adopt or the perpendicular silicon strip of other shapes.The cross section of the semi-hollow silicon core that it is combined into can also according to circumstances adopt other shape except Polygons and circle.This is apparent to those skilled in the art, does not repeat them here.
For the silicon core that cross-sectional area is certain, adopt this combined semi of the present invention hollow silicon core can obtain larger surface-area.In reduction furnace, the touch opportunity of silicon core and reactant gases just strengthens, and reactant gas molecules also can increase the collision opportunity of depositional plane (silicon wicking surface) and quantity thereupon.Also the more, the growth efficiency of polysilicon also improves the larger polysilicon amount then deposited of surface-area of silicon core thereupon.
Its advantage is:
1, silicon strip drawing and combine simple, easy to operate.
2, production efficiency is high, and later stage use cost is low.
Claims (10)
1. the silicon core used in production of polysilicon, is characterized in that: this silicon core is put together by many perpendicular silicon strips, and mutually side by side and leave gap, the silicon core after split is the cylindricality silicon core of semi-hollow to each perpendicular silicon strip.
2. silicon core as claimed in claim 1, is characterized in that: described perpendicular silicon strip is dull and stereotyped silicon strip (2).
3. silicon core as claimed in claim 1, is characterized in that: the cross section of described perpendicular silicon strip is " L " type silicon strip (4).
4. silicon core as claimed in claim 1, is characterized in that: the cross section of described perpendicular silicon strip is circular arc silicon strip (5).
5. silicon core as claimed in claim 1, is characterized in that: described perpendicular silicon strip is cylindrical silicon strip (6).
6. the silicon core as described in claim 1-5, is characterized in that: the shape of cross section of split later half hollow structure silicon core is for circular.
7. the silicon core as described in claim 1-5, is characterized in that: the shape of cross section of split later half hollow structure silicon core is Polygons.
8. the silicon core assembly used in production of polysilicon, this silicon core assembly is made up of silicon core and upper locking mechanism and lower locking mechanism, it is characterized in that: described silicon core adopts semi-hollow structure silicon core according to claim 1.
9. silicon core assembly as claimed in claim 8, it is characterized in that: described lower locking mechanism is made up of a permanent seat (3), the upper surface of permanent seat (3) is offered and the hole of perpendicular silicon strip position and mating shapes or draw-in groove, both adopt shrink-fit, are fixed on the lower end of perpendicular silicon strip on permanent seat (3).
10. silicon core assembly as claimed in claim 8, it is characterized in that: described upper locking mechanism is the one piece of transverse cross silicon plate (1) being arranged on perpendicular silicon strip upper end, hole or the silicon strip draw-in groove (9) of shape and perpendicular silicon strip position and mating shapes are set at the lower surface of horizontal silicon plate (1), both adopt shrink-fit, and the cylindricality silicon core of two groups of semi-hollows connects and fixes by horizontal silicon plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610077033.5A CN105502407A (en) | 2016-02-04 | 2016-02-04 | Silicon core used in polycrystalline silicon production and silicon core component thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610077033.5A CN105502407A (en) | 2016-02-04 | 2016-02-04 | Silicon core used in polycrystalline silicon production and silicon core component thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105502407A true CN105502407A (en) | 2016-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610077033.5A Pending CN105502407A (en) | 2016-02-04 | 2016-02-04 | Silicon core used in polycrystalline silicon production and silicon core component thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062714A (en) * | 1975-09-16 | 1977-12-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh | Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made |
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN104108718A (en) * | 2014-08-02 | 2014-10-22 | 徐泽庆 | Method and device for quickly depositing polysilicon |
| CN205709889U (en) * | 2016-02-04 | 2016-11-23 | 洛阳金诺机械工程有限公司 | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof |
-
2016
- 2016-02-04 CN CN201610077033.5A patent/CN105502407A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062714A (en) * | 1975-09-16 | 1977-12-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh | Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made |
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN104108718A (en) * | 2014-08-02 | 2014-10-22 | 徐泽庆 | Method and device for quickly depositing polysilicon |
| CN205709889U (en) * | 2016-02-04 | 2016-11-23 | 洛阳金诺机械工程有限公司 | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof |
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Application publication date: 20160420 |