CN105301809A - Array substrate structure and data line breakage repairing method for array substrate - Google Patents
Array substrate structure and data line breakage repairing method for array substrate Download PDFInfo
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- CN105301809A CN105301809A CN201510811006.1A CN201510811006A CN105301809A CN 105301809 A CN105301809 A CN 105301809A CN 201510811006 A CN201510811006 A CN 201510811006A CN 105301809 A CN105301809 A CN 105301809A
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- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000003466 welding Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 230000008439 repair process Effects 0.000 claims description 45
- 238000009413 insulation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000004927 fusion Effects 0.000 abstract 1
- 101100268330 Solanum lycopersicum TFT7 gene Proteins 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000005067 remediation Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
The invention provides an array substrate structure and a data line breakage repairing method for an array substrate. Standby data lines (4) corresponding to data lines (2) one by one are arranged, repairing lines (5) are arranged below the two ends of each data line (2) and the two ends of the corresponding standby data line (4) respectively, and when the data lines (2) are broken, the broken data lines (2), the corresponding repairing lines (5) and the corresponding standby data lines (4) can be connected together only by performing laser fusion welding on intersecting points of the broken data lines (2) and the corresponding repairing lines (5) and intersecting points of the corresponding standby data lines (4) and the corresponding repairing lines (5). The broken data lines of the array substrate can be easily and rapidly repaired, the repairing efficiency of the broken data lines of the array substrate can be improved, and the repairing success rate of the broken data lines of the array substrate can be increased.
Description
Technical field
The present invention relates to display technique field, particularly relate to the broken data wire restorative procedure of a kind of array base-plate structure and array base palte.
Background technology
Liquid crystal display (LiquidCrystalDisplay, LCD) because having the advantages such as the thin and applied range of high image quality, power saving, fuselage, and be widely used in the various consumption electronic products such as mobile phone, TV, personal digital assistant, digital camera, notebook computer, desk-top computer, become the main flow in display device.
Liquid crystal display major part on existing market is backlight liquid crystal display, and it comprises display panels and backlight module (BacklightModule).The structure of display panels is by a colored filter substrate (ColorFilter, CF), a thin-film transistor array base-plate (ThinFilmTransistorArraySubstrate, TFTArraySubstrate) and a liquid crystal layer (LiquidCrystalLayer) be configured between two substrates formed, wherein have on array base palte many vertically and the tiny electric wire of level.The principle of work of display panels is by applying the rotation that driving voltage controls the liquid crystal molecule of liquid crystal layer on two panels glass substrate, the light refraction of backlight module out being produced picture.
Existing array base-plate structure generally includes: many be parallel to each other and the vertical data line be arranged in order, many be parallel to each other and the sweep trace of the level be arranged in order, with described data line and sweep trace is electrically connected multiple be the thin film transistor (TFT) (ThinFilmTransistor, TFT) that array is arranged and the pixel electrode be electrically connected with described thin film transistor (TFT).
Described sweep trace provides sweep signal to thin film transistor (TFT), and described data line provides data-signal to thin film transistor (TFT), to control display panels display frame.In the production run of array base palte, because production process is complicated, by the impact of production technology or power house environment, the situation of broken data wire may be there is, cause producing black line in display frame, have a strong impact on image display quality, now need to repair the data line of broken string.For above-mentioned existing array base-plate structure, when after data line fracture, can only carry out long line reparation in periphery, repair process is complicated, and repairing effect is poor, and success ratio is low.
Summary of the invention
The object of the present invention is to provide a kind of array base-plate structure, the process that array base palte broken data wire is repaired can be simplified, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
The present invention also aims to a kind of broken data wire restorative procedure of array base palte, the broken data wire of array base palte can be repaired quickly and easily, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
For achieving the above object, the invention provides a kind of array base-plate structure, comprising: underlay substrate, the first metal layer be located on described underlay substrate, be covered in the insulation course on described the first metal layer and underlay substrate and be located at the second metal level on described insulation course;
Described second metal level comprises: many be parallel to each other and the data line of vertically arrangement successively and with described data line one to one many be parallel to each other and the preliminary data line vertically arranged successively, each preliminary data line and its corresponding data line interval are arranged;
Described the first metal layer comprises: many are parallel to each other and the repair line arranged below sweep trace horizontal successively and the two ends respectively at the preliminary data line of each data line and correspondence thereof, and described repair line is spatially intersected with the data line of side provided thereon and the two ends of preliminary data line.
Described array base-plate structure also comprises the multiple pixel cells of array arrangement on described underlay substrate, the TFT that each pixel cell comprises a pixel electrode and is electrically connected with this pixel electrode;
Every bar data line arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace; For same a line pixel cell, the two row TFT being positioned at every bar data line arranged on left and right sides are electrically connected at this data line jointly, be positioned on the left of this data line TFT be electrically connected at the sweep trace be positioned at above this row pixel cell, the TFT be positioned on the right side of this data line is electrically connected at the sweep trace be positioned at below this row pixel cell.
The grid of described TFT is positioned at the first metal layer and is electrically connected at sweep trace, and source electrode is all positioned at the second metal level with drain electrode and is electrically connected at data line and pixel electrode respectively.
The material of described the first metal layer and the second metal level is the heap stack combination of one or more in molybdenum, titanium, aluminium, copper, nickel.
The material of described insulation course is monox, silicon nitride or the combination of the two, and the material of described pixel electrode is ITO.
The present invention also provides a kind of broken data wire restorative procedure of array base palte, comprises the steps:
Step 1, provide array basal plate;
The structure of described array base palte comprises: underlay substrate, the first metal layer be located on described underlay substrate, be covered in the insulation course on described the first metal layer and underlay substrate and be located at the second metal level on described insulation course;
Described second metal level comprises: many be parallel to each other and the data line of vertically arrangement successively and with described data line one to one many be parallel to each other and the preliminary data line vertically arranged successively, each preliminary data line and its corresponding data line interval are arranged;
Described the first metal layer comprises: many are parallel to each other and the repair line arranged below sweep trace horizontal successively and the two ends respectively at the preliminary data line of each data line and correspondence thereof, and described repair line is spatially intersected with the data line of side provided thereon and the two ends of preliminary data line;
Step 2, detect the position of data line that broken string appears in described array base palte, and find the preliminary data line corresponding with the data line occurring breaking and repair line;
The point of crossing of step 3, the data line that broken by laser welding and corresponding repair line and corresponding preliminary data line and the point of crossing of corresponding repair line, linked together the data line of described broken string with corresponding repair line and corresponding preliminary data line.
The structure of the array base palte in described step 1 also comprises the multiple pixel cells of array arrangement on described underlay substrate, the TFT that each pixel cell comprises a pixel electrode and is electrically connected with this pixel electrode;
Every bar data line arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace; For same a line pixel cell, the two row TFT being positioned at every bar data line arranged on left and right sides are electrically connected at this data line jointly, be positioned on the left of this data line TFT be electrically connected at the sweep trace be positioned at above this row pixel cell, the TFT be positioned on the right side of this data line is electrically connected at the sweep trace be positioned at below this row pixel cell.
The material of described the first metal layer and the second metal level is the heap stack combination of one or more in molybdenum, titanium, aluminium, copper, nickel.
The material oxidation silicon of described insulation course, silicon nitride or the combination of the two, the material of described pixel electrode is ITO.
Beneficial effect of the present invention: the broken data wire restorative procedure of a kind of array base-plate structure provided by the invention and array base palte, be provided with and data line preliminary data line one to one, and below the two ends of the preliminary data line of each data line and correspondence thereof, repair line is set respectively, when there is broken string in data line, as long as the point of crossing of the data line broken by laser welding and corresponding repair line, and the preliminary data line of correspondence and the point of crossing of corresponding repair line, can by the data line of described broken string and corresponding repair line, and the preliminary data line of correspondence links together, the broken data wire of array base palte can be repaired quickly and easily, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
Accompanying drawing explanation
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
In accompanying drawing,
Fig. 1 is the structure diagram of array base-plate structure of the present invention;
Fig. 2 is the diagrammatic cross-section corresponding to A-A place in Fig. 1;
Fig. 3 is the schematic diagram that array base-plate structure of the present invention carries out the step 3 of the schematic diagram of broken data wire reparation and the broken data wire restorative procedure of array base palte of the present invention;
Fig. 4 is the process flow diagram of the broken data wire restorative procedure of array base palte of the present invention.
Embodiment
For further setting forth the technological means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Please refer to Fig. 1 and Fig. 2, first the present invention provides a kind of array base-plate structure, comprising: underlay substrate 1, the first metal layer M1 be located on described underlay substrate 1, be covered in the insulation course GI on described the first metal layer M1 and underlay substrate 1 and be located at the second metal level M2 on described insulation course GI.
Described second metal level M2 comprises: many be parallel to each other and the data line 2 of vertically arrangement successively and with described data line 2 one to one many be parallel to each other and the preliminary data line 4 vertically arranged successively, each preliminary data line 4 and its corresponding data line 2 interval are arranged.Fig. 1 illustrates the left side that the data line 2 corresponding with it be located at by each preliminary data line 4, and certainly, each preliminary data line 4 also can be located at the right side of the data line 2 corresponding with it.
Described the first metal layer M1 comprises: many are parallel to each other and the repair line 5 arranged below sweep trace 3 horizontal successively and the two ends respectively at the preliminary data line 4 of each data line 2 and correspondence thereof, and described repair line 5 is spatially intersected with the data line 2 of side provided thereon and the two ends of preliminary data line 4.
Particularly, the material of described the first metal layer M1 and the second metal level M2 is the heap stack combination of one or more in molybdenum (Mo), titanium (Ti), aluminium (Al), copper (Cu), nickel (Ni).The material oxidation silicon (SiOx) of described insulation course GI, silicon nitride (SiNx) or the combination of the two.
Described array base-plate structure also comprises the multiple pixel cells of array arrangement on described underlay substrate 1, the TFT7 that each pixel cell comprises a pixel electrode 6 and is electrically connected with this pixel electrode 6.The grid of described TFT7 is positioned at the first metal layer M1 and is electrically connected at sweep trace 3, and source electrode is all positioned at the second metal level M2 with drain electrode and is electrically connected at data line 2 and pixel cell 6 respectively.The material of described pixel electrode 6 is tin indium oxide (IndiumTinOxide, ITO).Further, array base-plate structure of the present invention adopts shared data line (DataLineShare, DLS) pixel cell layouts of type, every bar data line 2 arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace 3.For same a line pixel cell, the two row TFT7 being positioned at every bar data line 2 arranged on left and right sides are electrically connected at this data line 2 jointly, be positioned on the left of this data line 2 TFT7 be electrically connected at the sweep trace 3 be positioned at above this row pixel cell, the TFT7 be positioned on the right side of this data line 2 is electrically connected at the sweep trace 3 be positioned at below this row pixel cell.By the pixel cell layouts of above-mentioned shared data line style, the number of data line 2 can be reduced, weaken and cause circuit on array base palte to increase the impact brought because increasing preliminary data line 4.
Refer to Fig. 3, when array base-plate structure generation broken data wire of the present invention, by the point of crossing of data line 2 and the corresponding repair line 5 of laser direct welding broken string and corresponding preliminary data line 4 point of crossing with corresponding repair line 5, namely the data line 2 of described broken string can be linked together with corresponding repair line 5 and corresponding preliminary data line 4, realize the reparation of broken data wire, simplify the process that array base palte broken data wire is repaired, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
Refer to Fig. 4, the present invention also provides a kind of broken data wire restorative procedure of array base palte, comprises the steps:
Step 1, provide array basal plate.
As shown in Figures 1 and 2, the structure of described array base palte comprises: underlay substrate 1, the first metal layer M1 be located on described underlay substrate 1, be covered in the insulation course GI on described the first metal layer M1 and underlay substrate 1 and be located at the second metal level M2 on described insulation course GI.
Described second metal level M2 comprises: many be parallel to each other and the data line 2 of vertically arrangement successively and with described data line 2 one to one many be parallel to each other and the preliminary data line 4 vertically arranged successively, each preliminary data line 4 and its corresponding data line 2 interval are arranged.
Described the first metal layer M1 comprises: many are parallel to each other and the repair line 5 arranged below sweep trace 3 horizontal successively and the two ends respectively at the preliminary data line 4 of each data line 2 and correspondence thereof, and described repair line 5 is spatially intersected with the data line 2 of side provided thereon and the two ends of preliminary data line 4.
Particularly, the material of described the first metal layer M1 and the second metal level M2 is the heap stack combination of one or more in Mo, Ti, Al, Cu, Ni.Material SiOx, SiNx of described insulation course GI or the combination of the two.
Described array base-plate structure also comprises the multiple pixel cells of array arrangement on described underlay substrate 1, the TFT7 that each pixel cell comprises a pixel electrode 6 and is electrically connected with this pixel electrode 6.The grid of described TFT7 is positioned at the first metal layer M1 and is electrically connected at sweep trace 3, and source electrode is all positioned at the second metal level M2 with drain electrode and is electrically connected at data line 2 and pixel cell 6 respectively.The material of described pixel electrode 6 is ITO.Further, array base-plate structure of the present invention adopts the pixel cell layouts of shared data line style, and every bar data line 2 arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace 3.For same a line pixel cell, the two row TFT7 being positioned at every bar data line 2 arranged on left and right sides are electrically connected at this data line 2 jointly, be positioned on the left of this data line 2 TFT7 be electrically connected at the sweep trace 3 be positioned at above this row pixel cell, the TFT7 be positioned on the right side of this data line 2 is electrically connected at the sweep trace 3 be positioned at below this row pixel cell.
Step 2, detect the position of data line 2 that broken string appears in described array base palte, and find the preliminary data line 4 corresponding with the data line 2 occurring breaking and repair line 5.
Step 3, as shown in Figure 3, the point of crossing of the data line 2 broken by laser welding and corresponding repair line 5 and corresponding preliminary data line 4 and the point of crossing of corresponding repair line 5, linked together the data line 2 of described broken string with corresponding repair line 5 and corresponding preliminary data line 4.
So far the reparation of the broken data wire of array substrate is completed.
Compared with prior art, the point of crossing of the point of crossing of the data line 2 that the broken data wire restorative procedure of array base palte of the present invention utilizes the direct welding of laser to break and corresponding repair line 5 and corresponding preliminary data line 4 and corresponding repair line 5, the broken data wire of array base palte can be repaired quickly and easily, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
In sum, the broken data wire restorative procedure of array base-plate structure of the present invention and array base palte, be provided with and data line preliminary data line one to one, and below the two ends of the preliminary data line of each data line and correspondence thereof, repair line is set respectively, when there is broken string in data line, as long as the point of crossing of the data line broken by laser welding and corresponding repair line, and the preliminary data line of correspondence and the point of crossing of corresponding repair line, can by the data line of described broken string and corresponding repair line, and the preliminary data line of correspondence links together, the broken data wire of array base palte can be repaired quickly and easily, improve the remediation efficiency of array base palte broken data wire and repair success ratio.
The above, for the person of ordinary skill of the art, can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection domain that all should belong to the claims in the present invention.
Claims (10)
1. an array base-plate structure, it is characterized in that, comprising: underlay substrate (1), the first metal layer (M1) be located on described underlay substrate (1), the second metal level (M2) being covered in the insulation course (GI) on described the first metal layer (M1) and underlay substrate (1) and being located on described insulation course (GI);
Described second metal level (M2) comprising: many be parallel to each other and the data line (2) of vertically arrangement successively and with described data line (2) one to one many be parallel to each other and the preliminary data line (4) vertically arranged successively, each preliminary data line (4) and its corresponding data line (2) interval are arranged;
Described the first metal layer (M1) comprising: many are parallel to each other and the repair line (5) arranged below sweep trace horizontal successively (3) and the two ends respectively at the preliminary data line (4) of each data line (2) and correspondence thereof, and described repair line (5) is spatially intersected with the data line (2) of side provided thereon and the two ends of preliminary data line (4).
2. array base-plate structure as claimed in claim 1, it is characterized in that, also comprise the multiple pixel cells of array arrangement on described underlay substrate (1), the TFT (7) that each pixel cell comprises a pixel electrode (6) and is electrically connected with this pixel electrode (6);
Every bar data line (2) arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace (3); For same a line pixel cell, two row TFT (7) being positioned at every bar data line (2) arranged on left and right sides are electrically connected at this data line (2) jointly, be positioned at this data line (2) left side TFT (7) be electrically connected at the sweep trace (3) be positioned at above this row pixel cell, be positioned at this data line (2) right side TFT (7) be electrically connected at the sweep trace (3) be positioned at below this row pixel cell.
3. array base-plate structure as claimed in claim 2, it is characterized in that, the grid of described TFT (7) is positioned at the first metal layer (M1) and is electrically connected at sweep trace (3), and source electrode and drain electrode are all positioned at the second metal level (M2) and are electrically connected at data line (2) and pixel electrode (6) respectively.
4. array base-plate structure as claimed in claim 1, it is characterized in that, the material of described the first metal layer (M1) and the second metal level (M2) is the heap stack combination of one or more in molybdenum, titanium, aluminium, copper, nickel.
5. array base-plate structure as claimed in claim 2, it is characterized in that, the material of described insulation course (GI) is monox, silicon nitride or the combination of the two, and the material of described pixel electrode (6) is ITO.
6. a broken data wire restorative procedure for array base palte, is characterized in that, comprise the steps:
Step 1, provide array basal plate;
The structure of described array base palte comprises: underlay substrate (1), the first metal layer (M1) be located on described underlay substrate (1), the second metal level (M2) being covered in the insulation course (GI) on described the first metal layer (M1) and underlay substrate (1) and being located on described insulation course (GI);
Described second metal level (M2) comprising: many be parallel to each other and the data line (2) of vertically arrangement successively and with described data line (2) one to one many be parallel to each other and the preliminary data line (4) vertically arranged successively, each preliminary data line (4) and its corresponding data line (2) interval are arranged;
Described the first metal layer (M1) comprising: many are parallel to each other and the repair line (5) arranged below sweep trace horizontal successively (3) and the two ends respectively at the preliminary data line (4) of each data line (2) and correspondence thereof, and described repair line (5) is spatially intersected with the data line (2) of side provided thereon and the two ends of preliminary data line (4);
Step 2, detect the position of data line (2) that broken string appears in described array base palte, and find the preliminary data line (4) corresponding with the data line (2) occurring breaking and repair line (5);
The point of crossing of step 3, the data line (2) that broken by laser welding and corresponding repair line (5) and corresponding preliminary data line (4) and the point of crossing of corresponding repair line (5), linked together the data line (2) of described broken string with corresponding repair line (5) and corresponding preliminary data line (4).
7. the broken data wire restorative procedure of array base palte as claimed in claim 6, it is characterized in that, the structure of the array base palte in described step 1 also comprises the multiple pixel cells of array arrangement on described underlay substrate (1), the TFT (7) that each pixel cell comprises a pixel electrode (6) and is electrically connected with this pixel electrode (6);
Every bar data line (2) arranged on left and right sides arranges a row pixel cell, and often row pixel cell upper and lower arranges a sweep trace (3); For same a line pixel cell, two row TFT (7) being positioned at every bar data line (2) arranged on left and right sides are electrically connected at this data line (2) jointly, be positioned at this data line (2) left side TFT (7) be electrically connected at the sweep trace (3) be positioned at above this row pixel cell, be positioned at this data line (2) right side TFT (7) be electrically connected at the sweep trace (3) be positioned at below this row pixel cell.
8. the broken data wire restorative procedure of array base palte as claimed in claim 7, it is characterized in that, the grid of described TFT (7) is positioned at the first metal layer (M1) and is electrically connected at sweep trace (3), and source electrode and drain electrode are all positioned at the second metal level (M2) and are electrically connected at data line (2) and pixel electrode (6) respectively.
9. the broken data wire restorative procedure of array base palte as claimed in claim 6, it is characterized in that, the material of described the first metal layer (M1) and the second metal level (M2) is the heap stack combination of one or more in molybdenum, titanium, aluminium, copper, nickel.
10. the broken data wire restorative procedure of array base palte as claimed in claim 7, it is characterized in that, the material of described insulation course (GI) is monox, silicon nitride or the combination of the two, and the material of described pixel electrode (6) is ITO.
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| CN201510811006.1A CN105301809A (en) | 2015-11-19 | 2015-11-19 | Array substrate structure and data line breakage repairing method for array substrate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105527736A (en) * | 2016-02-15 | 2016-04-27 | 京东方科技集团股份有限公司 | Array substrate, repair method of array substrate, display panel and display device |
| CN107656386A (en) * | 2017-08-31 | 2018-02-02 | 武汉天马微电子有限公司 | Array substrate, repairing method and display panel |
| CN108287442A (en) * | 2018-02-06 | 2018-07-17 | 重庆京东方光电科技有限公司 | The restorative procedure and array substrate of array substrate |
| CN109164613A (en) * | 2018-10-24 | 2019-01-08 | 合肥鑫晟光电科技有限公司 | A kind of array substrate and its method for maintaining, display panel and display device |
| CN111427211A (en) * | 2020-04-21 | 2020-07-17 | 昆山龙腾光电股份有限公司 | Array substrate and display device |
| CN115811915A (en) * | 2022-12-15 | 2023-03-17 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof, and display device |
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