CN105296813A - Aluminum alloy for liquid crystal display device wire harness - Google Patents
Aluminum alloy for liquid crystal display device wire harness Download PDFInfo
- Publication number
- CN105296813A CN105296813A CN201510736323.1A CN201510736323A CN105296813A CN 105296813 A CN105296813 A CN 105296813A CN 201510736323 A CN201510736323 A CN 201510736323A CN 105296813 A CN105296813 A CN 105296813A
- Authority
- CN
- China
- Prior art keywords
- aluminum alloy
- crystal display
- percent
- cobalt
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 31
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 16
- 239000010941 cobalt Substances 0.000 claims abstract description 16
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052742 iron Inorganic materials 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000011733 molybdenum Substances 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 238000003487 electrochemical reaction Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 230000008859 change Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to an aluminum alloy for a liquid crystal display device wire harness. The aluminum alloy comprises the following components by atomic percent: 0.5 to 5.0 percent of nickel, cobalt and iron, 0.1 to 0.3 percent of indium, 0.3 to 2.0 percent of carbon, 0.3 to 2.0 percent of molybdenum and the balance of aluminum. Since the aluminum alloy contains transitional metal molybdenum and indium, the transfer process of electrons in oxygen atoms can be effectively maintained, electrochemical reaction caused by electrode potential can be reduced, and low resistivity and high strength can be maintained.
Description
Technical field
The invention belongs to metal material field, relate to a kind of aluminum alloy films, particularly relate to a kind of aluminium alloy for liquid-crystal display distribution.
Background technology
In field of liquid crystal, the demand of the liquid-crystal display of film-type has very large growth.Simultaneously along with large screen and the high-definition of liquid-crystal display, also more and more stricter to the requirement of wiring material.
Be now that the aluminum alloy materials of matrix is paid close attention to widely with aluminium, but aluminium alloy is because low-melting problem, there is temperature resistance problem, general aluminium alloy distribution aluminum alloy films surface after being subject to the heating of 300-400 DEG C there will be burr shape projection, and such projection can cause the short circuit of adjacent circuit under wiring condition.
Have technology to propose application materials with high melting point to manufacture aluminum alloy films distribution, but the general resistivity of this kind of materials with high melting point is higher, cannot be adapted to the distribution of film-type liquid-crystal display for this reason.
Now also have technology to propose to adopt the aluminum alloy materials containing carbon and manganese can significantly reduce the generation of burr projection and resistivity is lower.But the transparency electrode ITO of this kind of aluminium alloy distribution and indicating meter causes the change of joint resistance because of electrochemical reaction.
But this technical scheme still existing defects is exactly that the current potential of this aluminum alloy films is incomplete same with the ito film current potential of indicating meter.If when not using blocking layer, under energising, be no more than 12 hours, obvious resistance change will be produced.In the lab, all there is the obvious problem of resistance change in each aluminium alloy that the nickel above-mentioned technology mentioned, cobalt, iron carry out combining, and find that there is the generation of aluminum oxide at aluminum alloy films distribution with the ito film place of engaging of liquid-crystal display.
Summary of the invention
The present invention be directed to existing aluminum alloy films technical scheme and propose improvement opportunity, pass through the technical program, can effectively overcome aluminum alloy films distribution with indicating meter ito film between electrochemical reaction problem, and effectively overcome the generation of aluminum alloy films distribution burr shape projection.
The present invention is achieved by the following technical solutions:
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 0.5-5.0at%, cobalt and iron, the indium of 0.1-0.3at%, the carbon of 0.3-2.0at%, the molybdenum of 0.3-2.0at%, surplus is aluminium.
The mass ratio of described nickel, cobalt and iron is 2: 1: 1.
The present invention's beneficial effect is compared with the existing technology:
Because in the aluminium alloy of the application, include transition metal molybdenum and indium, effectively can keep the transmittance process of electronics in Sauerstoffatom, reduce the electrochemical reaction because electropotential produces, and low-resistivity and high strength can be kept.
Embodiment
Be described below in detail embodiments of the invention, embodiment described below is exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
The invention provides a kind of for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 0.5-5.0at%, cobalt and iron, the indium of 0.1-0.3at%, the carbon of 0.3-2.0at%, the molybdenum of 0.3-2.0at%, surplus is aluminium.
The mass ratio of described nickel, cobalt and iron is 2: 1: 1.
Embodiment 1
A kind of be used for liquid-crystal display distribution aluminum alloy films, its respectively composition comprise by atomic percentage conc: the nickel of 0.5at%, cobalt and iron, the indium of 0.1at%, the carbon of 0.3at%, the molybdenum of 0.3at%, surplus is aluminium.
The mass ratio of described nickel, cobalt and iron is 2: 1: 1.
In this application, the mass ratio of all nickel, cobalt and iron is 2: 1: 1, does not do to change.
Embodiment 2
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 5.0at%, cobalt and iron, the indium of 0.3at%, the carbon of 2.0at%, the molybdenum of 2.0at%, surplus is aluminium.
Embodiment 3
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 2.0at%, cobalt and iron, the indium of 0.2at%, the carbon of 0.8at%, the molybdenum of 1.0at%, surplus is aluminium.
Embodiment 4
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 3.0at%, cobalt and iron, the indium of 0.15at%, the carbon of 1.2at%, the molybdenum of 1.2at%, surplus is aluminium.
Embodiment 5
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 1.5at%, cobalt and iron, the indium of 0.25at%, the carbon of 1.5at%, the molybdenum of 1.5at%, surplus is aluminium.
Embodiment 6
A kind of be used for liquid-crystal display distribution aluminium alloy, its respectively composition comprise by atomic percentage conc: the nickel of 2.0at%, cobalt and iron, the indium of 0.22at%, the carbon of 1.5at%, the molybdenum of 1.0at%, surplus is aluminium.
In this application because cannot all enumerating be carried out, can be only that representative is described with the above embodiments, but not be say only have following examples in this application.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is defined by the following claims.
Claims (2)
1., for a liquid-crystal display distribution aluminium alloy, it is characterized in that: its respectively composition comprise by atomic percentage conc: the nickel of 0.5-5.0at%, cobalt and iron, the indium of 0.1-0.3at%, the carbon of 0.3-2.0at%, the molybdenum of 0.3-2.0at%, surplus is aluminium.
2. according to claim 1 for liquid-crystal display distribution aluminium alloy, it is characterized in that: the mass ratio of described nickel, cobalt and iron is 2: 1: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510736323.1A CN105296813A (en) | 2015-11-03 | 2015-11-03 | Aluminum alloy for liquid crystal display device wire harness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510736323.1A CN105296813A (en) | 2015-11-03 | 2015-11-03 | Aluminum alloy for liquid crystal display device wire harness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105296813A true CN105296813A (en) | 2016-02-03 |
Family
ID=55194626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510736323.1A Pending CN105296813A (en) | 2015-11-03 | 2015-11-03 | Aluminum alloy for liquid crystal display device wire harness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105296813A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479802A (en) * | 2001-09-18 | 2004-03-03 | ���������kҵ��ʽ���� | Aluminum alloy thin film, wiring circuit having the thin film, and target material for forming the thin film |
| CN1578844A (en) * | 2001-10-05 | 2005-02-09 | 克里斯有限合伙公司 | Aluminium alloy for making fin stock material |
| CN101097948A (en) * | 2006-06-30 | 2008-01-02 | 三菱电机株式会社 | Transparent conductive film, semiconductor device, and active matrix type display device |
| CN102899533A (en) * | 2012-10-29 | 2013-01-30 | 熊科学 | Aluminum alloy film |
| CN102912195A (en) * | 2012-10-29 | 2013-02-06 | 熊科学 | Aluminum alloy film for liquid crystal display wiring |
-
2015
- 2015-11-03 CN CN201510736323.1A patent/CN105296813A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479802A (en) * | 2001-09-18 | 2004-03-03 | ���������kҵ��ʽ���� | Aluminum alloy thin film, wiring circuit having the thin film, and target material for forming the thin film |
| CN1578844A (en) * | 2001-10-05 | 2005-02-09 | 克里斯有限合伙公司 | Aluminium alloy for making fin stock material |
| CN101097948A (en) * | 2006-06-30 | 2008-01-02 | 三菱电机株式会社 | Transparent conductive film, semiconductor device, and active matrix type display device |
| CN102899533A (en) * | 2012-10-29 | 2013-01-30 | 熊科学 | Aluminum alloy film |
| CN102912195A (en) * | 2012-10-29 | 2013-02-06 | 熊科学 | Aluminum alloy film for liquid crystal display wiring |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106077997B (en) | A kind of solder for anti-fused salt corrosion nickel base superalloy fusion welding | |
| Hudaya et al. | High thermal performance of SnO2: F thin transparent heaters with scattered metal nanodots | |
| TW200502589A (en) | Amorphous transparent conductive membrane, sputtering target material for the conductive membrane, amorphous transparent electrode substrate, its production, and color filter for liquid crystal display | |
| US20100135849A1 (en) | cadmium-free silver brazing filler metal brazing filler metal | |
| WO2019176552A1 (en) | Oxide thin film, and oxide sintered body for sputtering target for producing oxide thin film | |
| CN106405927B (en) | Liquid crystal display device | |
| Jin et al. | New polytypes of LPSO structures in an Mg–Co–Y alloy | |
| Hao et al. | The interface between long-period stacking-ordered (LPSO) structure and β'phase in Mg-Gd-Al alloys | |
| Dierking | Carbon allotropes as ITO electrode replacement materials in liquid crystal devices | |
| KR101485305B1 (en) | Sintered body and amorphous film | |
| CN102899533A (en) | Aluminum alloy film | |
| CN105296813A (en) | Aluminum alloy for liquid crystal display device wire harness | |
| CN102912195A (en) | Aluminum alloy film for liquid crystal display wiring | |
| WO2018179595A1 (en) | Sputtering target, sputtering target production method, amorphous film, amorphous film production method, crystalline film, and crystalline film production method | |
| Wang et al. | Effects of La addition on microstructure evolution and thermal stability of Cu-2.35 Ni-0.59 Si sheet | |
| CN104746106B (en) | Molten salt electrolysis method for preparing aluminum-scandium intermediate alloy | |
| He et al. | Effect of Ga addition on the microstructure and magnetic properties of melt-spun (Nd0. 8Ce0. 2) 13.8 Fe68. 96− x Ga x Co11. 49B5. 74 alloys | |
| TWI508862B (en) | Light-absorbing layered structure | |
| Zhai et al. | Phase evolution of a novel Al–Zn–Mg–Cu–Zr–Sm alloy during homogenization annealing treatment | |
| CN105297018A (en) | Preparation method of etching fluid for liquid crystal displayers | |
| Zhao et al. | A Novel Ultra‐Thin and Smooth Sm: Ag Composite Electrode with High Visible Transmittance Enables Efficient Color‐Neutral Semitransparent Organic Solar Cells | |
| CN205140537U (en) | Graphite alkene combined electrode | |
| CN103526069B (en) | Electric-conductivity heat-conductivity high copper selenium complex alloy material | |
| CN108285278B (en) | A kind of preparation method of high-resistance and high-transparency ITO glass substrate | |
| CN103343259A (en) | High-temperature and high-voltage-resistance copper alloy conductive material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160203 |
|
| WD01 | Invention patent application deemed withdrawn after publication |