CN105226006B - The forming method of interconnection structure - Google Patents
The forming method of interconnection structure Download PDFInfo
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- CN105226006B CN105226006B CN201410261136.8A CN201410261136A CN105226006B CN 105226006 B CN105226006 B CN 105226006B CN 201410261136 A CN201410261136 A CN 201410261136A CN 105226006 B CN105226006 B CN 105226006B
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 293
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 85
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 85
- 239000003054 catalyst Substances 0.000 claims abstract description 79
- 239000011229 interlayer Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims description 37
- 239000003989 dielectric material Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000007800 oxidant agent Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000006555 catalytic reaction Methods 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- BLJNPOIVYYWHMA-UHFFFAOYSA-N alumane;cobalt Chemical compound [AlH3].[Co] BLJNPOIVYYWHMA-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 silicon oxide carbides Chemical class 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention provides a kind of forming method of interconnection structure, comprising: provides substrate, catalyst layer and sacrificial layer is formed on the substrate；Partial sacrificial layer and catalyst layer are removed, to form the pseudo- plug structure being made of residual catalyst layer and remaining sacrificial layer；Interlayer dielectric layer is formed on substrate between pseudo- plug structure；Remaining sacrificial layer is removed, to form the opening for exposing the residual catalyst layer in interlayer dielectric layer；To expose remaining catalyst layer and form carbon nanotube plug.The beneficial effects of the present invention are: catalyst layer is formed in substrate surface, the catalyst layer formed in this way is distributed on substrate relatively uniformly, thickness is uniform, flatness is good, and then make to be subsequently formed the carbon nanotube plug that more regular, tube wall pattern is preferable, impurity is less, this is conducive to improve the characteristics such as carbon nanotube itself current load density, conductivity, and then optimizes the performance of interconnection structure.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to a kind of forming method of interconnection structure.
Background technique
With the continuous raising reduced with circuit level of electronic component size, starting to use in the prior art has
More low-resistivity, anti-electricity, material of the stronger copper of transfer ability as conductive structure.But with further subtracting for characteristic size
Small, the current density that interconnection line is carried is increasing, and copper has been increasingly difficult to meet and further promote interconnection line performance
Demand.
At the same time, carbon nanotube (Carbon Nano Tubes, CNT) is due to having the tube wall similar to graphite, nanometer
Good calorifics or the electric properties such as grade duct, quantum size effect, high current density, high-termal conductivity, are increasingly becoming people and grind
The hot spot studied carefully, and become the new selection of interconnection structure material.
Therefore, how preferably to be formed in interconnection structure of the carbon nanotube to be applied to semiconductor devices (such as shape
At the conductive plunger of carbon nano-tube material), become those skilled in the art's technical problem urgently to be resolved.
Summary of the invention
Problems solved by the invention is to provide a kind of forming method of interconnection structure, improves by using carbon nanotube plug
The performance of interconnection structure.
To solve the above problems, the present invention provides a kind of forming method of interconnection structure, comprising:
Substrate is provided；
Catalyst layer is formed over the substrate；
Sacrificial layer is formed on the catalyst layer；
Partial sacrificial layer and partially catalyzed oxidant layer are removed along the direction perpendicular to substrate surface, is catalyzed with being formed by residue
The pseudo- plug structure that oxidant layer and remaining sacrificial layer are constituted；
Interlayer dielectric layer is formed on substrate between pseudo- plug structure；
Remaining sacrificial layer is removed, to form the opening for exposing the residual catalyst layer in interlayer dielectric layer；
Carbon nanotube plug is formed on residual catalyst layer in said opening.
Optionally, after the step of substrate is provided, formed catalyst layer the step of before, the forming method further include:
Barrier layer is formed over the substrate；
Contact layer is formed on the barrier layer；
The step of forming catalyst layer includes: that the catalyst layer is formed on the contact layer.
Optionally, the step of forming contact layer includes the contact layer for forming titanium nitride material.
Optionally, the step of forming barrier layer includes forming the barrier layer of tantalum nitride or tantalum material.
Optionally, the step of forming catalyst layer includes: the catalyst layer to form cobalt or cobalt aluminum material.
Optionally, the step of forming catalyst layer includes: that the catalyst layer is formed by the way of physical vapour deposition (PVD).
Optionally, the step of forming sacrificial layer includes, using bottom anti-reflection layer as the sacrificial layer.
Optionally, the material of the bottom anti-reflection layer is amorphous carbon.
Optionally, the step of formation interlayer dielectric layer includes:
Interlevel dielectric material layer of the K value less than 3 is formed on substrate between pseudo- plug structure；
Part interlevel dielectric material layer is removed, remaining interlevel dielectric material layer is made to be flush with the pseudo- plug structure,
To form the interlayer dielectric layer.
Optionally, after the step of forming pseudo- plug structure, before the step of forming interlayer dielectric layer, the forming method
Further include:
Separate layer is covered on the substrate that the surface of pseudo- plug structure, side wall and pseudo- plug structure expose；
Formed interlayer dielectric layer the step of include:
The interlayer dielectric material layer between the pseudo- plug structure for being covered with separate layer；
The part interlevel dielectric material layer and part separate layer on pseudo- plug structure are removed, remaining interlevel dielectric material is made
Layer is flush with the pseudo- plug structure, to form the interlayer dielectric layer.
Optionally, the step of covering separate layer includes forming the separate layer of oxide or nitride.
Optionally, the step of removing part interlevel dielectric material layer and part separate layer includes being ground using chemical machinery
Mill or the mode for returning quarter remove part interlevel dielectric material layer and part separate layer.
Optionally, formed carbon nanotube plug the step of include: by the way of chemical vapor deposition in said opening
Form the carbon nanotube plug.
Optionally, the step of forming the carbon nanotube plug in said opening by the way of chemical vapor deposition packet
It includes: the temperature of the chemical vapor deposition being made to be no more than 400 degrees Celsius.
Optionally, the step of formation carbon nanotube plug includes:
Form carbon nanotube；
Part carbon nanotube is removed, so that remaining carbon nanotube and the surface of the interlayer dielectric layer is flush, to be formed
State carbon nanotube plug.
Optionally, the step of removing part carbon nanotube includes, using chemical mechanical grinding or by the way of returning quarter, removal
The part carbon nanotube plug.
Optionally, the step of providing substrate includes: to be formed in the substrate to connecting component；
The step of forming the pseudo- plug structure being made of residual catalyst layer and remaining sacrificial layer includes: to insert the puppet
Plug structure is located at described in connecting component.
Compared with prior art, technical solution of the present invention has the advantage that
Catalyst layer is first formed on the substrate, since the area that the catalyst layer is formed is bigger, what is formed in this way is urged
Agent layer is distributed on substrate relatively uniformly, and the distribution of catalyst is relatively uniform, and thickness is uniform, flatness is good；It does so
For carbon nano tube growth basis catalyst layer be conducive to grow in subsequent step more regular, tube wall pattern preferably, impurity
Less carbon nanotube plug, and then be conducive to improve the characteristics such as carbon nanotube itself current load density, conductivity, Jin Eryou
Change the performance of interconnection structure.
In addition, after forming catalyst layer, by forming sacrificial layer on catalyst layer and along the side perpendicular to substrate
To removal partial sacrificial layer and the catalyst layer corresponding to the sacrificial layer lower surface being removed, remaining sacrificial layer
The size that the carbon nanotube plug being subsequently formed can be defined, improves the controllability to the carbon nanotube plug being subsequently formed,
To improve the formation quality of carbon nanotube plug, optimize the performance of interconnection structure.
Detailed description of the invention
Fig. 1 to Figure 12 is the structural schematic diagram of each step in one embodiment of forming method of interconnection structure of the present invention.
Specific embodiment
In the prior art, the conductive plunger performance of carbon nano-tube material may be not ideal enough, which is because, existing
Form the general step of the conductive plunger of carbon nano-tube material are as follows: interlayer dielectric layer is formed on the substrate；In interlayer dielectric layer
Form opening；Catalyst layer is formed in open bottom, then forms carbon nanotube plug on the catalyst layer of formation again.
However, the size with semiconductor devices is gradually reduced, the size of the opening also becomes smaller accordingly, this can lead
It causes catalyst material to be difficult to enter open bottom, and then influences the quality for forming catalyst layer in opening to a certain extent,
That is, the distribution of the catalyst material formed may become not uniform enough or in uneven thickness.The catalyst layer of formation
Poor quality can influence the carbon nanotube plug to be formed (such as distribution, wall curvature of carbon nanotube etc.) to a certain extent,
And then affect the performance of the conductive plunger of carbon nano-tube material.
Therefore, the present invention provides a kind of forming method of interconnection structure, comprising the following steps: provides substrate；In the lining
Catalyst layer is formed on bottom；Sacrificial layer is formed on the catalyst layer；It is sacrificial along the direction removal part perpendicular to substrate surface
Domestic animal layer and partially catalyzed oxidant layer, to form the pseudo- plug structure being made of residual catalyst layer and remaining sacrificial layer；In puppet
Interlayer dielectric layer is formed on substrate between plug structure；Remaining sacrificial layer is removed, exposes institute to be formed in interlayer dielectric layer
State the opening of residual catalyst layer；Carbon nanotube plug is formed on residual catalyst layer in said opening,
Through the above steps, first substrate surface forms catalyst layer, compared with the existing technology in form catalysis in the opening
Oxidant layer, the catalyst layer that the present invention is formed can be distributed relatively uniformly on substrate, and the thickness of catalyst layer is uniform, flatness
It is good, be conducive to grow the carbon nanotube plug that more regular, tube wall pattern is preferable, impurity is less in subsequent step, Jin Erti
The characteristics such as high carbon nanotube itself current load density, conductivity, optimize the performance of interconnection structure；In addition, sacrificial layer can be used
In the size for the carbon nanotube plug that definition is subsequently formed, the controllability to the carbon nanotube plug being subsequently formed is improved；So
Interlayer dielectric layer is formed by the substrate surface in exposing afterwards, exposes remaining catalysis to remove remaining sacrificial layer to be formed
Then the opening of oxidant layer forms above-mentioned ideal carbon nanotube plug on the catalyst layer exposed.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
It is the structural representation of each step in one embodiment of forming method of interconnection structure of the present invention referring to figs. 1 to Figure 12
Figure.
Referring initially to Fig. 1, substrate (not shown) is provided；In the present embodiment, it is already formed with over the substrate
Interlayer dielectric layer 100 and metal plug (via) 50.The metal plug 50 be to connecting component, for be subsequently formed carbon
Electrical connection is realized between nanotube plug.
Specifically, the interlayer dielectric layer 100 and metal plug 50 can be using the prior art (such as Damascus works
Skill) it is formed, and the material of interlayer dielectric layer 100 and metal plug 50 can also use common used material shape in the prior art
At for example, the material of interlayer dielectric layer 100 can be silica or some low K or ultra low-K material, the metal is inserted
The material of plug 50 can be copper, and the present invention does not repeat this, is also not construed as limiting.
Smooth (or flat) degree of the interlayer dielectric layer 100 and metal plug 50 that are formed in order to further increase,
Keep the surface of the barrier layer being subsequently formed and catalyst layer also relatively flat, in the present embodiment, forms the barrier layer
And before the step of catalyst layer, can use chemical mechanical grinding (CMP) technique planarize the interlayer dielectric layer 100 with
And the surface of metal plug 50, make the interlayer dielectric layer 100 that there is more even curface, is conducive to be subsequently formed in this way
Catalyst layer 80 is uniformly distributed.
Referring next to Fig. 2, in the present embodiment, (i.e. 100 surface of interlayer dielectric layer and metal plug over the substrate
On 50) sequentially form barrier layer 60 and contact layer 70.
Wherein, the barrier layer 60 can be used as the barrier layer of the metal plug 50 of copper product in the prior art, main mesh
Be stop copper diffusion；In the present embodiment, the barrier layer 60 can be using tantalum nitride or tantalum as material.
Contact layer 70 in the next steps, as formation carbon nanotube plug and copper product metal plug 50 it
Between contact layer improve electrical connection effect to reduce the contact resistance between carbon nanotube plug and metal plug 50；In this reality
It applies in example, the contact layer 70 can be using titanium nitride as material.
Since the surface of interlayer dielectric layer 100 and metal plug 50 is more smooth, the contact layer 70 of formation also possess compared with
For even curface, this is conducive to be subsequently formed more uniform catalyst layer.
It should be understood that whether the present invention is to necessarily being formed the barrier layer 60 and the contact layer 70 is not done
Limitation.
With reference to Fig. 3, catalyst layer 80 is formed on the substrate (surface of the contact layer 70 namely in the present embodiment).
In the present embodiment, carbon nanotube plug is prepared using chemical vapour deposition technique (CVD), so needing thing accordingly
Catalyst layer 80 first is formed on the surface (being the surface of contact layer 70 in the present embodiment) for forming carbon nanotube plug, in order to rear
Continuous carbon nanotube is with the growth that the catalyst layer 80 is that growth basis carries out carbon nanotube.
Specifically, the catalyst layer 80 is the film layer of multiple nano particles composition.Wherein, the uniformity etc. of nano particle
It is easy to impact the pattern etc. of the carbon nanotube of formation.
Since the catalyst layer 80 is formed in the surface of the contact layer 70, compared with the existing technology, the catalysis of formation
Oxidant layer 80 can be more evenly distributed on substrate, and the thickness of catalyst layer 80 is uniform, flatness is good, between nano particle not
It is easy to happen irregular accumulation, this is conducive to improve the subsequent life with the carbon nanotube that the catalyst layer 80 is growth basis
Long quality, such as carbon nanotube arrangement is more regular, tube wall pattern is preferable, impurity is less etc..
In the present embodiment, the catalyst layer 80 can be used as material using cobalt (Co).But the present invention does not do this
It limits, it can also be using material of the materials as the catalyst layer 80 such as other metals, such as cobalt aluminium (CoAl).
Correspondingly, the catalyst layer 80 can be formed by the way of physical vapour deposition (PVD), specifically, can also adopt
This is not intended to be limited in any with modes, the present invention such as sputtering or arc ion platings.
With reference to Fig. 4, form sacrificial layer 200 on the catalyst layer 80, the sacrificial layer 200 for be partially removed with
A part of pseudo- plug structure is formed, and then defines the subsequent size by carbon nanotube plug to be formed.
In the present embodiment, the sacrificial layer 200 can be bottom anti-reflection layer (Bottom Anti Reflective
Coating, BARC), it is removed since bottom anti-reflection layer is usually relatively easy, in this way in subsequent removal bottom anti-reflection layer institute
In the step of pseudo- plug structure of formation is to expose catalyst layer 80, can reduce as best one can to the device architecture of surrounding (such as
Catalyst layer 80) influence.
In the present embodiment, the sacrificial layer 200 can use material of the amorphous carbon as the bottom anti-reflection layer 340
Material.
But the present invention is directed to form the material being easily removed in the next steps, to reduce the influence to surrounding structure,
Whether bottom anti-reflection layer, and the material specifically used must be used not to be limited in any way sacrificial layer 200, but answered
When forming the material of the sacrificial layer 200 according to the actual situation to select.
With continued reference to Fig. 4, hard mask layer 210, and the shape on the hard mask layer 210 are formed on the sacrificial layer 200
At the figuratum photoresist 220 of tool.
Photoresist 220 is used to define the part that subsequent sacrificial layer 200 needs to be removed.
The hard mask layer 210 is used in the subsequent removal part sacrificial layer 200, the sacrificial layer retained as needs
200 etching mask.
In the present embodiment, material of the titanium nitride as hard mask layer 210 can be used, but the present invention does not limit this
It is fixed.
It is etching mask with photoresist 220 and hard mask layer 210 in conjunction with reference Fig. 5, along the side perpendicular to substrate surface
To removal partial sacrificial layer 200 and partially catalyzed oxidant layer 80, it is made of with being formed residual catalyst layer and remaining sacrificial layer
Pseudo- plug structure.
Wherein, the size of remaining sacrificial layer is used to define the size of the opening formed in subsequent interlayer dielectric layer, and carbon is received
Mitron plug will be in said opening that growth basis is grown with remaining catalyst layer, to form carbon nanotube plug.
Meanwhile the pseudo- plug structure should be made to be located on the metal plug 50, to make the carbon nanometer being subsequently formed
Pipe is electrically connected with the metal plug 50 realization.
In the present embodiment, it other than removing above-mentioned partial sacrificial layer 200 and partially catalyzed oxidant layer 80, also removes
Part is located at catalyst layer 80, barrier layer 60 and the contact layer 70 of 200 lower surface of sacrificial layer, until exposed portion interlayer is situated between
Matter layer 100.
With reference to Fig. 6, in the present embodiment, separate layer is covered on the surface of pseudo- plug structure, side wall and the substrate
(spacer)230。
The separate layer 230 is used to that the remaining sacrificial layer 201 to be protected not influenced by subsequent technique as far as possible, for example,
In the step of being subsequently formed interlayer layer of dielectric material, what the interlevel dielectric material layer itself of formation may have small is answered
Power, these stress may cause the sacrificial layer 201 to be formed and a degree of deformation occur.As it was noted above, remaining sacrificial layer
201 for defining the subsequent size by carbon nanotube plug to be formed, if deformation occurs is easy to influence carbon to receive for sacrificial layer 201
The size of mitron plug, so, by forming the separate layer 230 to keep remaining sacrificial layer 201 as far as possible in the present embodiment
Original pattern.But whether the present invention is to being arranged the separate layer 230 with no restrictions.
In the present embodiment, the separate layer 230 can be formed using oxide or nitride.
In the present embodiment, the mode shape of atomic layer deposition (Atomic Layer Deposition, ALD) can be used
At the separate layer 230.The separate layer 230 grown by atomic layer deposition more uniformly, and conformal covering power also compared with
It is good, in addition, forming the K value that uniform separate layer 230 also helps the interlevel dielectric material layer formed in control subsequent step.
It should be understood that atomic layer deposition is only mode used by the present embodiment, the present invention does not make this
It limits, other depositional modes can be equally used for forming the separate layer 230.Similarly, the present invention is for the separate layer 230
Equally it is not construed as limiting.
With reference to Fig. 7, interlayer layer of dielectric material 300, the interlevel dielectric material layer 300 are formed on the wall 230
It is used to form the interlayer dielectric layer for realizing the insulation of carbon nanotube plug.
In the present embodiment, the interlevel dielectric material layer 300, super low-K dielectric can be formed using ultralow K dielectric material
Material can reduce the parasitic capacitance between metal plug, and then reduce the RC retardation ratio of interconnection structure.
It in the present embodiment, can be using dielectric material of the K value less than 3 for example containing materials such as silicon oxide carbides (SiOCH).But
Be it should be noted that the present invention for the material of interlevel dielectric material layer 300 K value and with no restrictions.
Correspondingly, the interlevel dielectric material of the ultralow K dielectric material can be formed by the way of spin coating (spin-on)
Layer 300.
With reference to Fig. 8, planarization process is carried out to the interlevel dielectric material layer 300 of formation, and detecting planarization process
To remaining sacrificial layer 201 material when stop, to remove the part interlevel dielectric material layer 300 on pseudo- plug structure, part
Separate layer 230 and remaining hard mask layer 210 keep remaining interlevel dielectric material layer 300 and the pseudo- plug structure mutually neat
It is flat.Remaining interlevel dielectric material layer 300 forms the interlayer dielectric layer.
In the present embodiment, planarization process can be carried out by the way of chemical mechanical grinding, but the present invention is to this
It is not construed as limiting, other techniques can also be used, such as return carving technology.
With reference to Fig. 9, the remaining sacrificial layer 201 of exposing is removed, it is described to form opening 81 in interlayer dielectric layer
Opening 81 exposes remaining catalyst layer 80.
In the present embodiment, the remaining sacrificial layer 201 of the exposing can be removed by the way of plasma etching, still
It should be noted that the present invention is directed to remove the remaining sacrificial layer 201 of exposing exposing catalyst layer 80 to be subsequently formed
Carbon nanotube plug, for that can remove the remaining sacrificial layer 201 and will not excessively remove the mode of the catalyst layer 80
It is not limited in any way, but corresponding adjustment should be made according to factors such as the materials of remaining sacrificial layer 201.
With reference to Figure 10, carbon nanotube 400` is formed on catalyst layer 80 in said opening.The carbon nanotube 400`
It is growth starting point with the catalyst layer 80, is grown up along the direction perpendicular to substrate, and then forms the carbon nanotube and insert
Plug.
As it was noted above, the catalyst layer 80 due to formation is more evenly distributed on contact layer 70, this is in certain journey
Be conducive to improve the quality of the carbon nanotube 400` formed on degree, because the optics of carbon nanotube, electrical properties are to a certain degree
Upper form and distribution depending on them.Carbon nanotube arrangement is more regular, tube wall pattern is preferable, impurity is less etc., this is advantageous
In characteristics such as performance carbon nanotube itself current load density, conductivities.
In the present embodiment, the carbon nanotube of formation is multi-walled carbon nanotube (multi-walled carbon
nanotube,MWNT).But the restriction that the present invention does not do this, single-walled carbon nanotube (single-walled can also be formed
Carbon nanotubes, SWNT) or double-walled carbon nano-tube (double-walled carbon nanotubes, DWNT) etc.
The carbon nanotube of other forms.
In the present embodiment, the carbon nanotube 400` can be formed by the way of chemical vapor deposition (CVD).It is this
Mode is advantageous in that, technique is simpler relative to existing other modes for forming carbon nanotubes, and cost is also relatively
It is low, it is easy to be mass produced.
Further, it is possible to form the carbon by the way of low temperature chemical vapor deposition (Low-temperature CVD)
Nanotube 400`.It can avoid the excessively high function of influencing semiconductor devices other devices structure of temperature as far as possible in this way.
In the present embodiment, the temperature of low temperature chemical vapor deposition can be made to be no more than 400 degrees Celsius.But the present invention couple
This is not construed as limiting, and specific ceiling temperature should make corresponding adjustment according to the actual situation.
With reference to Figure 11, part carbon nanotube 400` is removed.Since the carbon nanotube 400` of formation may be higher by the interlayer
The surface (as shown in Figure 10) of dielectric layer, or the carbon nanotube 400` surface irregularity formed, so in the present embodiment,
It needs to carry out planarization process to the carbon nanotube 400` of formation, makes remaining carbon nanotube 400` and the interlayer dielectric layer phase
It flushes, to form the carbon nanotube plug 400, consequently facilitating the formation of subsequent interconnection structure.
Further, the present embodiment carries out planarization process to carbon nanotube 400` by the way of chemical mechanical grinding, but
It is which is not limited by the present invention, it can also be using other planarization process modes such as returning and carve.
With reference to Figure 12, in the present embodiment, after the interconnection structure for forming carbon nanotube plug 400, also continue in carbon
Other interconnection structures are continuously formed on the interconnection structure of nanotube plug 400；Such as interlayer dielectric layer 500 shown in Figure 12 with
The interconnection structure that conductive structure 520 is constituted, wherein the conductive structure 520 can be the metal of the formation of the metal material such as copper
Plug or carbon nanotube plug, this is not limited by the present invention.Between interlayer dielectric layer 500 and interlayer dielectric layer also
It is formed with separation layer 510, will be kept apart between interlayer dielectric layer 500 and interlayer dielectric layer；It is herein the prior art, this hair
It is bright that this is not repeated them here, also it is not limited in any way.
Due to formation carbon nanotube plug 400 have it is previously described it is more regular, tube wall pattern is preferable, impurity is less
The advantages that, so, also there are preferable electrical connection properties between carbon nanotube plug 400 and conductive structure 520.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of forming method of interconnection structure characterized by comprising
Substrate is provided；
The step of forming catalyst layer over the substrate, forming catalyst layer includes: the catalysis to form cobalt or cobalt aluminum material
Oxidant layer；
Sacrificial layer is formed on the catalyst layer, using bottom anti-reflection layer as the sacrificial layer；
Hard mask layer is formed on the sacrificial layer, and is formed on the hard mask layer and have figuratum photoresist；
Using the photoresist and hard mask layer as etching mask, along perpendicular to substrate surface direction removal partial sacrificial layer with
And partially catalyzed oxidant layer, to form the pseudo- plug structure being made of residual catalyst layer and remaining sacrificial layer；
Remove the photoresist；
Interlayer dielectric layer is formed on substrate between pseudo- plug structure；
Remaining sacrificial layer is removed, to form the opening for exposing the residual catalyst layer in interlayer dielectric layer；
Carbon nanotube plug is formed on residual catalyst layer in said opening.
2. the forming method of interconnection structure as described in claim 1, which is characterized in that after the step of providing substrate, formed
Before the step of catalyst layer, the forming method further include:
Barrier layer is formed over the substrate；
Contact layer is formed on the barrier layer；
The step of forming catalyst layer includes: that the catalyst layer is formed on the contact layer.
3. the forming method of interconnection structure as claimed in claim 2, which is characterized in that the step of forming contact layer includes shape
At the contact layer of titanium nitride material.
4. the forming method of interconnection structure as claimed in claim 2, which is characterized in that the step of forming barrier layer includes shape
At the barrier layer of tantalum nitride or tantalum material.
5. the forming method of interconnection structure as described in claim 1, which is characterized in that formed catalyst layer the step of include:
The catalyst layer is formed by the way of physical vapour deposition (PVD).
6. the forming method of interconnection structure as described in claim 1, which is characterized in that the material of the bottom anti-reflection layer is
Amorphous carbon.
7. the forming method of interconnection structure as described in claim 1, which is characterized in that the step of forming interlayer dielectric layer is wrapped
It includes:
Interlevel dielectric material layer of the K value less than 3 is formed on substrate between pseudo- plug structure；
Part interlevel dielectric material layer is removed, so that remaining interlevel dielectric material layer is flush with the pseudo- plug structure, with shape
At the interlayer dielectric layer.
8. the forming method of interconnection structure as described in claim 1, which is characterized in that the step of forming pseudo- plug structure it
Afterwards, before the step of forming interlayer dielectric layer, the forming method further include:
Separate layer is covered on the substrate that the surface of pseudo- plug structure, side wall and pseudo- plug structure expose；
Formed interlayer dielectric layer the step of include:
The interlayer dielectric material layer between the pseudo- plug structure for being covered with separate layer；
Remove the part interlevel dielectric material layer and part separate layer on pseudo- plug structure, make remaining interlevel dielectric material layer with
The puppet plug structure is flush, to form the interlayer dielectric layer.
9. the forming method of interconnection structure as claimed in claim 8, which is characterized in that the step of covering separate layer includes shape
At oxide or the separate layer of nitride.
10. the forming method of interconnection structure as claimed in claim 8, which is characterized in that removal part interlevel dielectric material layer
And the step of part separate layer, includes, and removes part interlevel dielectric material layer using chemical mechanical grinding or by the way of returning quarter
And part separate layer.
11. the forming method of interconnection structure as described in claim 1, which is characterized in that the step of forming carbon nanotube plug
It include: to form the carbon nanotube plug in said opening by the way of chemical vapor deposition.
12. the forming method of interconnection structure as claimed in claim 11, which is characterized in that by the way of chemical vapor deposition
The step of forming the carbon nanotube plug in said opening includes: that the temperature of the chemical vapor deposition is made to be no more than 400
Degree Celsius.
13. the forming method of interconnection structure as described in claim 1, which is characterized in that the step of forming carbon nanotube plug
Include:
Form carbon nanotube；
Part carbon nanotube is removed, so that remaining carbon nanotube and the surface of the interlayer dielectric layer is flush, to form the carbon
Nanotube plug.
14. such as the forming method for the interconnection structure that claim 13 is stated, which is characterized in that the step of removing part carbon nanotube is wrapped
It includes: removing the part carbon nanotube plug using chemical mechanical grinding or by the way of returning quarter.
15. the forming method of interconnection structure as described in claim 1, which is characterized in that
The step of providing substrate includes: to be formed in the substrate to connecting component；
The step of forming the pseudo- plug structure being made of residual catalyst layer and remaining sacrificial layer includes: to make the pseudo- plug knot
Structure is located at described in connecting component.
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