CN105161620A - Organic semiconductor element structure and manufacturing method - Google Patents
Organic semiconductor element structure and manufacturing method Download PDFInfo
- Publication number
- CN105161620A CN105161620A CN201510401205.5A CN201510401205A CN105161620A CN 105161620 A CN105161620 A CN 105161620A CN 201510401205 A CN201510401205 A CN 201510401205A CN 105161620 A CN105161620 A CN 105161620A
- Authority
- CN
- China
- Prior art keywords
- organic semiconductor
- electrode
- source electrode
- drain electrode
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 95
- 239000011241 protective layer Substances 0.000 claims description 55
- 239000012212 insulator Substances 0.000 claims description 34
- -1 oxonium ion Chemical class 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 description 10
- 238000000992 sputter etching Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010301 surface-oxidation reaction Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses an organic semiconductor element structure and a manufacturing method. The organic semiconductor element structure comprises a substrate, and a source electrode, a drain electrode and a grid electrode which are formed on the substrate, wherein the source electrode and the drain electrode are provided with a barrier layer, the barrier layer is provided with an organic semiconductor layer, the barrier layer and the organic semiconductor layer completely cover the source electrode and the drain electrode, and grid insulation layers are arranged between the grid electrode and the source electrode and the drain electrode. The yellow light process and the graphical technology are utilized to form the organic semiconductor element structure to generate a structure which has consistency characteristic and is a low grid electrode leakage structure to the source electrode and the drain electrode, as the electrode interface is protected through materials from being oxidized, contact resistance generation possibility of the electrode interface can be greatly reduced.
Description
Technical field
The present invention relates to a kind of organic semiconductor device structure, the invention still further relates to a kind of method making organic semiconductor component structure.
Background technology
Current, adopt organic semiconductor can make various types of active device and passive device, as transistor, diode, OLED, transducer, memory, display, battery etc., existing organic semiconductor assembly, source(source electrode) drain with drain() electrode considers and organic semi-conductor matching, what comparatively often use is gold, silver, silver alloy, but the graphical processing procedure of organic semi-conductor the most often use for oxonium ion etching mode, this can cause the surface oxidation of silver-colored associated metal and then have influence on component characteristic.If use the metal of this easy oxidation, in order to avoid its problem of oxidation, be the mode of technically use at present at semiconductor patterning processing procedure use ink-jetprinting.It is graphical that use ink-jetprinting mode carries out organic semiconductor, volume production has the problem generation of speed, aligning accuracy, large area, volume production processing procedure is not comparatively suitable for panel processing procedure is more incompatible now, the graphical processing procedure of oxonium ion etching is still the current mode that everybody uses, but oxonium ion etching mode can cause the surface oxidation of silver-colored associated metal and then have influence on component characteristic.
Summary of the invention
For overcoming the defect of above-mentioned prior art, an object of the present invention is to provide a kind of organic semiconductor device structure, overcome the problem of organic semiconductor assembly mass production, use the organic semiconductor processing procedure of oxonium ion etching can avoid the problem of surface oxidation, and preferably component characteristic can be obtained, and be applicable to volume production processing procedure.
Another object of the present invention is to provide the method that can make organic semiconductor component structure.
For achieving the above object, the present invention adopts the technical scheme of organic semiconductor device structure to be:
A kind of organic semiconductor device structure, comprises substrate, is formed in the source electrode on substrate, drain electrode, gate electrode; Wherein, described source electrode, drain electrode arrange protective layer; described protective layer arranges organic semiconductor layer; described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely, between described gate electrode and source electrode, drain electrode, arrange gate insulator.The present invention utilizes described protective layer and organic semiconductor layer to cover described source electrode and drain electrode completely, and described source electrode and drain electrode are not exposed completely.Namely the concept of protective layer (barrierlayer) is utilized; utilize and slim patterned insulator layer can carry out metal coating; the organic semiconductor layer carrying out oxonium ion etching is again graphical; use the made component characteristic of this mode than do not use be evident as good; and this processing procedure and existing panel processing procedure compatibility, having can production.
As the improvement of technique scheme, described protective layer is that dielectric layer material is graphically formed.
As the improvement of technique scheme, described dielectric layer material is the dielectric layer material of organic or inorganic.
As the improvement of technique scheme, described protective layer is the protective layer that coating is formed, or/and described gate insulator is the gate insulator that coating is formed.
Further, described substrate is that glass, plastics, sheet metal or composite material are made.
As the improvement of such scheme, described source electrode, drain electrode are easy oxidation metal.
Preferably, described source electrode, drain electrode, gate electrode are that gold-tinted, printing or spray printing processing procedure are formed.
As the improvement of such scheme, described gate electrode is can conducting metal, oxide electrode or macromolecule conducting material.
Further, described gate insulator is organic dielectric layer material.
For achieving the above object, a kind of concrete grammar making organic semiconductor component structure of adopting of the present invention is as follows:
One, prepared substrate;
Two, on substrate, source electrode and drain electrode is formed;
Three, dielectric layer material on source electrode and drain electrode;
Four, utilize processing procedure that dielectric layer material is graphically formed protective layer;
Five, growth organic semiconductor layer, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Six, oxonium ion is utilized to etch organic semiconductor layer is graphical;
Seven, growth gate insulator;
Eight, on gate insulator, gate electrode is formed.
The concrete grammar of the another kind of organic semiconductor device structure that the present invention adopts is as follows:
One, prepared substrate;
Two, on substrate, gate electrode is formed;
Three, growth gate insulator;
Four, on gate insulator, source electrode and drain electrode is formed;
Five, dielectric layer material on source electrode and drain electrode;
Six, utilize processing procedure that dielectric layer material is graphically formed protective layer;
Seven, growth organic semiconductor layer, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Eight, oxonium ion is utilized to etch organic semiconductor layer is graphical.
Further, described source electrode, drain electrode and gate electrode adopt gold-tinted, printing or spray printing processing procedure to be formed.
Further, described dielectric layer material is the dielectric layer material of organic or inorganic, and described gate insulator is organic dielectric layer material.
Implement the embodiment of the present invention; there is following beneficial effect: adopt the organic semiconductor device structure that the present invention makes; coat protective layer before organic semiconductor layer and organic dielectric layer are set; and making it graphical, the present invention utilizes gold-tinted processing procedure and pattern technology (ion(ic) etching etc. as UV/O2, O2plasma, mist) to form organic semiconductor component structure in a repeatable fashion.The manufacture method of above-mentioned organic semiconductor device structure provided by the invention; the organic semiconductor device structure obtained proposes a different coat of metal structure's practice; this is applied in the problem using the organic semiconductor processing procedure of oxonium ion etching can be avoided surface oxidation; and preferably component characteristic can be obtained, and be applicable to volume production processing procedure.The present invention utilizes the concept of protective layer (barrierlayer); utilize and slim patterned insulator layer can carry out metal coating; after growth organic semiconductor; the organic semiconductor layer carrying out oxonium ion etching is again graphical; use the made component characteristic of this mode and be evident as good than not using, except having preferably except element characteristic, element has lower contact resistance; and this processing procedure and existing panel processing procedure compatibility, having can production.The present invention uses a new structure processing procedure mode, use can be graphical slim organic insulator be used as protective layer (barrierlayer), oxonium ion direct contacting metal reaction formation oxide layer is avoided to affect element electrical, and this protective layer (barrierlayer) available advanced low-k materials can as the dielectric layer of assembly, organic dielectric layer does not have the problem of heterogeneous interface on protective layer (barrierlayer), also assembly can not be affected, the present invention is at oxidizable metal level (source, drain) one is utilized patterned dielectric layer material can to form a protective layer (barrierlayer) on, can make when the organic semiconductor layer doing oxonium ion dry ecthing is graphical, can not on electrode, form metal oxide layer and affect construction package characteristic.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, be briefly described to the accompanying drawing of embodiment below.
Fig. 1 is the Making programme figure of the organic semiconductor device structure of one embodiment of the invention.
Fig. 2 is the Making programme figure of the organic semiconductor device structure of another embodiment of the present invention.
Fig. 3 does not adopt the electrical figure between the gate voltage of structure processing procedure of the present invention and leakage current.
Fig. 4 does not adopt the electrical figure between the drain voltage of structure processing procedure of the present invention and leakage current.
Fig. 5 adopts the electrical figure between the gate voltage after structure processing procedure of the present invention and leakage current.
Fig. 6 adopts the electrical figure between the drain voltage after structure processing procedure of the present invention and leakage current.
Embodiment
The specific embodiment of the present invention is further described below in conjunction with accompanying drawing.
As shown in Figure 1-2, the embodiment of a kind of organic semiconductor device structure of the present invention, the concept that organic semiconductor device structure proposes protective layer is that protection easy oxidation metal is avoided being subject to oxonium ion attack and caused oxidation, to improve organic semiconductor device architectural characteristic, organic semiconductor device structure of the present invention comprises substrate 10, described substrate 10 is glass, plastics, sheet metal or composite material are made, at least form source electrode 20 on the substrate 10, drain electrode 30, gate electrode 40, wherein, described source electrode 20, drain electrode 30 is easy oxidation metal, described gate electrode 40 is can conducting metal, oxide electrode or macromolecule conducting material.Coat protective layer 50 on described source electrode 20, drain electrode 30, described protective layer 50 is graphically formed for dielectric layer material, and be preferably the dielectric layer material of organic or inorganic, protective layer 50 adopts dielectric layer material to reach primary demand.
Described protective layer 50 arranges organic semiconductor layer 60; organic semiconductor layer 60 is used to provide the path that electric charge carrier flows through; organic semiconductor layer 60 is provided on or below source electrode 20, drain electrode 30; organic semiconductor layer 60 can be provided between substrate 10 and source electrode 20, drain electrode 30; namely before formation source electrode 20, drain electrode 30, be coated with organic semiconductor layer 60 on the substrate 10, the present invention is preferably coated with organic semiconductor layer 60 at source electrode 20, drain electrode 30 after being formed again.The object that the present invention arranges protective layer 50 and organic semiconductor layer 60 ensures that described source electrode 20 and drain electrode 30 do not expose; follow-up organic semiconductor layer 60 processing procedure overlay area of the present invention; source electrode 20 and drain electrode 30 will expose from protective layer 50; do not have organic semiconductor layer 60 region then protective layer 50 need cover source electrode 20 and drain electrode 30; due to fabrication errors, after organic semiconductor layer 60 is graphical can local complexity on protective layer 50.Between described gate electrode 40 and source electrode 20, drain electrode 30, be coated with gate insulator 70, preferably, described gate insulator 70 is organic dielectric layer material.Source electrode 20, drain electrode 30 are isolated by protective layer 50 provided by the invention; after mainly protective layer 50 makes; matcoveredn material on metal; time graphical after follow-up organic semiconductor layer 60 is grown up; because of the protection of protective layer 50; make reacting gas to enter layer on surface of metal, cause anodizing.Gate insulator 70 of the present invention can utilize spin coating or inkjet technology etc. from other solution deposition techniques deposit dielectric layer material from solution.The present invention utilizes the concept of protective layer 50 (barrierlayer); utilize and slim patterned insulator layer can carry out metal coating; the organic semiconductor layer 60 carrying out oxonium ion etching is again graphical; use the made component characteristic of this mode than do not use be evident as good; and this processing procedure and existing panel processing procedure compatibility, having can production.The present invention uses a new structure processing procedure mode; use can be graphical slim organic insulator be used as protective layer 50(barrierlayer); the direct contacting metal reaction of oxonium ion is avoided to form oxide layer impact electrically; and the dielectric layer material that this protective layer (barrierlayer) is organic or inorganic can as the dielectric layer of assembly; dielectric layer material does not have the problem of heterogeneous interface on protective layer (barrierlayer), also can not affect construction package characteristic.
Preferably, described source electrode 20, drain electrode 30, gate electrode 40 are that gold-tinted, printing or spray printing processing procedure are formed, source electrode 20, drain electrode 30, gate electrode 40 make and also can make for the metal etch (wet method or dry method) of standard, coating method, these are well-known in the art, will repeat no more herein.
Under regard to the embodiment of the method that the present invention makes organic semiconductor component structure and be described.
In one embodiment, as shown in Figure 1, concrete steps are as follows:
One, preparing material is the substrate 10 that glass, plastics, sheet metal or composite material are made;
Two, source electrode 20 and drain electrode 30 is formed on the substrate 10;
Three, dielectric layer material on source electrode 20 and drain electrode 30;
Four, utilize processing procedure that dielectric layer material is graphically formed protective layer 50;
Five, growth organic semiconductor layer 60, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Six, utilize oxonium ion to etch to carry out organic semiconductor layer 60 graphical;
Seven, growth gate insulator 70;
Eight, gate electrode 40 is formed at gate insulator 70.
In another embodiment, as shown in Figure 2, concrete steps are as follows:
One, preparing material is the substrate 10 that glass, plastics, sheet metal or composite material are made;
Two, gate electrode 40 is formed on the substrate 10;
Three, growth gate insulator 70;
Four, on gate insulator 70, source electrode 20 and drain electrode 30 is formed;
Five, dielectric layer material on source electrode 20 and drain electrode 30;
Six, utilize processing procedure that dielectric layer material is graphically formed protective layer 50;
Seven, growth organic semiconductor layer 60, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Eight, oxonium ion is utilized to etch graphical for organic semiconductor layer 60.
By the organic semiconductor device structure made by said method, described source electrode 20, drain electrode 30 and gate electrode 40 adopt gold-tinted, printing or spray printing processing procedure to be formed, described dielectric layer material is the dielectric layer material of organic or inorganic, and described gate insulator 70 is organic dielectric layer material.
Fig. 3 and Fig. 4 does not adopt the electrical figure between the gate voltage of structure processing procedure of the present invention and leakage current, the electrical figure between drain voltage and leakage current.Fig. 5 and Fig. 6 adopts the electrical figure between the gate voltage after structure processing procedure of the present invention and leakage current, the electrical figure between drain voltage and leakage current.
Adopt the organic semiconductor device structure that the present invention makes; before arranging organic semiconductor layer, dielectric layer material patternization forms protective layer; the present invention utilizes gold-tinted processing procedure and pattern technology (ion(ic) etching etc. as UV/O2, O2plasma, mist) to form organic semiconductor component structure in a repeatable fashion, to produce the structure with consistent characteristic.The manufacture method of above-mentioned organic semiconductor device structure provided by the invention; the organic semiconductor device structure obtained proposes a different coat of metal structure's practice; this is applied in the problem using the organic semiconductor processing procedure of oxonium ion etching can be avoided surface oxidation; and preferably component characteristic can be obtained, and be applicable to volume production processing procedure.As shown in Fig. 5-Fig. 6; the present invention utilizes the concept of protective layer (barrierlayer); utilize and slim patterned insulator layer can carry out metal coating; after growth organic semiconductor, then the organic semiconductor layer carrying out oxonium ion etching is graphical, use the made component characteristic of this mode than do not use be evident as good; except having preferably except element characteristic; element has lower contact resistance, and this processing procedure and existing panel processing procedure compatibility, having can production.The present invention uses a new structure processing procedure mode, use can be graphical slim organic insulator be used as protective layer (barrierlayer), oxonium ion direct contacting metal reaction formation oxide layer is avoided to affect element electrical, and this protective layer (barrierlayer) available advanced low-k materials can as the dielectric layer of assembly, organic dielectric layer does not have the problem of heterogeneous interface on protective layer (barrierlayer), also assembly can not be affected, the present invention is at oxidizable metal level (source, drain) one is utilized patterned dielectric layer material can to form a protective layer (barrierlayer) on, can make when the organic semiconductor layer doing oxonium ion dry ecthing is graphical, can not on electrode, form metal oxide layer and affect construction package characteristic.
Above disclosedly be only preferred embodiment of the present invention, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (10)
1. an organic semiconductor device structure, comprises substrate, is formed in the source electrode on substrate, drain electrode, gate electrode; It is characterized in that: on described source electrode, drain electrode, be provided with protective layer; described protective layer arranges organic semiconductor layer; described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely, between described gate electrode and source electrode, drain electrode, be provided with gate insulator.
2. organic semiconductor device structure as claimed in claim 1, is characterized in that: described protective layer is the protective layer that dielectric layer material is graphically formed.
3. organic semiconductor device structure as claimed in claim 1, is characterized in that: described protective layer is the protective layer that coating is formed, or/and described gate insulator is the gate insulator that coating is formed.
4. organic semiconductor device structure as claimed in claim 1, is characterized in that: described source electrode, drain electrode, gate electrode are that gold-tinted, printing or spray printing processing procedure are formed.
5. organic semiconductor device structure as claimed in claim 1, is characterized in that: described gate insulator is the gate insulator of organic dielectric layer material.
6. a manufacture method for organic semiconductor device structure, is characterized in that, comprises the following steps:
One, prepared substrate;
Two, on substrate, source electrode and drain electrode is formed;
Three, dielectric layer material on source electrode and drain electrode;
Four, utilize processing procedure that dielectric layer material is graphically formed protective layer;
Five, growth organic semiconductor layer, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Six, oxonium ion is utilized to etch organic semiconductor layer is graphical;
Seven, growth gate insulator;
Eight, on gate insulator, gate electrode is formed.
7. a manufacture method for organic semiconductor device structure, is characterized in that, comprises the following steps:
One, prepared substrate;
Two, on substrate, gate electrode is formed;
Three, growth gate insulator;
Four, on gate insulator, source electrode and drain electrode is formed;
Five, dielectric layer material on source electrode and drain electrode;
Six, utilize processing procedure that dielectric layer material is graphically formed protective layer;
Seven, growth organic semiconductor layer, described protective layer and organic semiconductor layer cover described source electrode and drain electrode completely;
Eight, oxonium ion is utilized to etch organic semiconductor layer is graphical.
8. the manufacture method of organic semiconductor device structure as claimed in claims 6 or 7, is characterized in that, described source electrode, drain electrode and gate electrode adopt gold-tinted, printing or spray printing processing procedure to be formed.
9. the manufacture method of organic semiconductor device structure as claimed in claims 6 or 7, it is characterized in that, described dielectric layer material is the dielectric layer material of organic or inorganic.
10. the manufacture method of organic semiconductor device structure as claimed in claims 6 or 7, it is characterized in that, described gate insulator is organic dielectric layer material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510401205.5A CN105161620A (en) | 2015-07-10 | 2015-07-10 | Organic semiconductor element structure and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510401205.5A CN105161620A (en) | 2015-07-10 | 2015-07-10 | Organic semiconductor element structure and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161620A true CN105161620A (en) | 2015-12-16 |
Family
ID=54802429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510401205.5A Pending CN105161620A (en) | 2015-07-10 | 2015-07-10 | Organic semiconductor element structure and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161620A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161647A1 (en) * | 2016-03-22 | 2017-09-28 | 京东方科技集团股份有限公司 | Method for manufacturing display panel, display panel, and display device |
| CN107230539A (en) * | 2016-03-25 | 2017-10-03 | 昆山厚声电子工业有限公司 | Flat electrode arrangement resistor and its manufacture craft |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059631A (en) * | 2006-04-20 | 2007-10-24 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same |
| US20100264408A1 (en) * | 2007-11-20 | 2010-10-21 | Cambridge Display Technology Ltd. | Organic Thin Film Transistors, Active Matrix Organic Optical Devices and Methods of Making the Same |
| CN102194996A (en) * | 2010-03-08 | 2011-09-21 | 索尼公司 | Thin film transistor and electronic device |
| CN102891254A (en) * | 2008-08-07 | 2013-01-23 | 索尼株式会社 | Top-gate organic thin film transistor, production method thereof, and electronic device |
-
2015
- 2015-07-10 CN CN201510401205.5A patent/CN105161620A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059631A (en) * | 2006-04-20 | 2007-10-24 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same |
| US20100264408A1 (en) * | 2007-11-20 | 2010-10-21 | Cambridge Display Technology Ltd. | Organic Thin Film Transistors, Active Matrix Organic Optical Devices and Methods of Making the Same |
| CN102891254A (en) * | 2008-08-07 | 2013-01-23 | 索尼株式会社 | Top-gate organic thin film transistor, production method thereof, and electronic device |
| CN102194996A (en) * | 2010-03-08 | 2011-09-21 | 索尼公司 | Thin film transistor and electronic device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161647A1 (en) * | 2016-03-22 | 2017-09-28 | 京东方科技集团股份有限公司 | Method for manufacturing display panel, display panel, and display device |
| US10290659B2 (en) | 2016-03-22 | 2019-05-14 | Boe Technology Group Co., Ltd. | Methods for manufacturing display panels having reduced contact resistance, display panels and display devices |
| CN107230539A (en) * | 2016-03-25 | 2017-10-03 | 昆山厚声电子工业有限公司 | Flat electrode arrangement resistor and its manufacture craft |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109449182A (en) | Display base plate and its manufacturing method, display device | |
| CN102651401B (en) | A kind of thin film transistor, array substrate and its manufacturing method and display device | |
| JP6092260B2 (en) | Array substrate manufacturing method, array substrate, and display | |
| CN109671720B (en) | Array substrate, manufacturing method thereof, and display device | |
| TWI375340B (en) | ||
| JP2012114148A5 (en) | ||
| US10784330B2 (en) | Organic thin film transistor array substrate in which data line, source, drain and pixel electrode are formed by one photo mask, manufacture method thereof, and display device | |
| CN104656332A (en) | Array substrate, preparation method thereof and display device | |
| CN109166862A (en) | Flexible OLED display panel and preparation method thereof | |
| JP2007158301A5 (en) | ||
| CN102645811B (en) | Electronic-paper active substrate and manufacturing method thereof and electronic-paper display screen | |
| CN105161620A (en) | Organic semiconductor element structure and manufacturing method | |
| CN104737291B (en) | Method for producing optoelectronic components and optoelectronic components | |
| CN206907786U (en) | A kind of LED chip of anti-metal migration | |
| CN102664187B (en) | Organic light emitting diode display and manufacture method thereof | |
| US11355560B2 (en) | Touch display panel including touch unit disposed between pixel defining layers and/or between pixel defining layer and encapsulation layer | |
| US11581502B2 (en) | Method of making a current collecting grid for solar cells | |
| US20170104033A1 (en) | Array substrate and manufacturing method for the same | |
| CN205177812U (en) | Lateral wall and back have insulation protection's chip package structure | |
| CN102945840B (en) | Semiconductor chip package and method for packing | |
| CN104465390B (en) | Vertical transistor and method for manufacturing the same | |
| CN204905303U (en) | Organic semiconductor element structure | |
| CN101681998B (en) | Method for manufacturing an organic light emitting device as well as such a device | |
| CN104752233A (en) | Welding pad manufacturing method | |
| US20180057354A1 (en) | Semiconductor sensor and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |