CN104979160A - Manufacturing method of semiconductor device and manufacturing method of TI-IGBT - Google Patents

Abstract

The invention provides a manufacturing method of a semiconductor device and a manufacturing method of a TI-IGBT (triple-insulated gate bipolar transistor), wherein a region with lower requirement on local doping precision is doped in the manufacturing process of the semiconductor device, an ion cover is adopted in the local doping method to shield a semiconductor substrate, ions in a partial region pass through in the ion implantation process, and ions in the partial region are shielded, so that the local shielding of the semiconductor substrate is realized by only one step, and compared with the prior art in which the local shielding is realized by the procedures of gluing, exposure, development and the like, the manufacturing method provided by the invention greatly simplifies the process, shortens the production period and improves the production efficiency; and the manufacturing cost of the ion cover is greatly reduced relative to the cost of the photoetching machine and equipment required by each procedure in the photoetching process, so that the production cost of the semiconductor device can be reduced.

Description

Manufacturing method of semiconductor device and manufacturing method of TI-IGBT

technical field

The invention relates to the field of manufacturing semiconductor devices, and more specifically relates to a method for manufacturing a semiconductor device and a method for manufacturing a TI-IGBT.

Background technique

In the manufacturing process of semiconductor devices, it is usually necessary to form a doped region of appropriate type and concentration in a local area of the surface of the semiconductor substrate, while other areas are not doped, that is, the semiconductor substrate is locally doped.

The existing local doping includes photolithography process and ion implantation process. The general photolithography process needs to clean and dry the surface of the semiconductor substrate, coat the bottom, spin the photoresist, soft bake, align and expose, post-bake, Developing, hard baking, etching, testing and other processes, forming windows on the area of the semiconductor substrate surface that needs to be doped, forming a photoresist or thin film on the area that does not need to be doped on the surface of the semiconductor substrate to mask, and then Ion implantation is performed on a semiconductor substrate with photoresist or thin film. Since the place outside the window is blocked by photoresist or thin film, ions cannot enter the semiconductor substrate, and the place corresponding to the window is not blocked by photoresist or thin film. The ions enter the semiconductor substrate to form a doped region, thereby forming local doping on the semiconductor substrate.

Since the photolithography process includes multiple process steps and requires a photolithography machine to achieve local doping in areas with low local doping accuracy requirements during the fabrication of semiconductor devices, the process is cumbersome and the cost is high.

Contents of the invention

In view of this, the present invention provides a method for manufacturing a semiconductor device and a method for manufacturing a TI-IGBT (Triplemode Integrate-Insulated Gate Bipolar Transistor, triple mode integrated insulated gate bipolar transistor) to solve the problem of local doping in the prior art. When semiconductor devices with low precision requirements realize local doping, the process is cumbersome and the cost is high.

To achieve the above object, the present invention provides the following technical solutions:

A method of manufacturing a semiconductor device, comprising:

Provide semiconductor substrates;

doping a first type of impurity on one surface of the semiconductor substrate to form a fully doped first doped layer;

An ion mask with a pattern of through holes is provided on the first doped layer, and the through holes expose the surface of the first doped layer where the second doped region is to be formed;

Doping the first doped layer with the ion mask with the second type impurity, doping the second doped region to be formed to form the second doped region, and doping the rest of the first doped layer that is not doped with the second type impurity The impurity layer region forms a first doped region.

Preferably, the specific process of doping the first type of impurity and the doping of the second type of impurity is: using an ion implanter to perform ion implantation.

Preferably, the arranging the ion mask with the through-hole pattern on the first doped layer specifically includes: installing the ion mask on the ion implanter, moving the first doped layer that is fully doped aligning the semiconductor substrate forming the fully doped first doped layer with the ion mask.

Preferably, the setting of the ion mask with a through-hole pattern on the first doped layer is specifically: using a clamp to connect the ion mask with the semiconductor substrate forming the fully doped first doped layer Aligned and fastened together.

Preferably, the ion shield is a metal sheet.

Preferably, the semiconductor device is any one of fast recovery diodes, gate turn-off thyristors, electron injection enhanced gate transistors, integrated gate commutation thyristors, MOS-controlled turn-off thyristors or integrated gate double transistors kind.

The present invention also provides another method for manufacturing a semiconductor device, including:

Provide semiconductor substrates;

setting a first ion mask with a first doped region pattern on one surface of the semiconductor substrate;

Doping the semiconductor substrate provided with the first ion mask with the first type of impurities to form a first doped region;

setting a second ion mask with a second doped region pattern on the surface of the semiconductor substrate forming the first doped region;

The semiconductor substrate provided with the second ion mask is doped with the second type impurity to form a second doped region.

Preferably, the specific process of doping the first type of impurities and the doping of the second type of impurities is: using an ion implanter to perform ion implantation.

Preferably, the ion shield is a metal sheet.

Preferably, the semiconductor device is any one of fast recovery diodes, gate turn-off thyristors, electron injection enhanced gate transistors, integrated gate commutation thyristors, MOS-controlled turn-off thyristors or integrated gate double transistors kind.

Simultaneously, the present invention also provides a kind of manufacturing method of TI-IGBT, comprising:

S1. Provide a semiconductor substrate, one surface of the semiconductor substrate includes a plurality of IGBT cells, the IGBT cells include a drift region, a base region located in the surface of the drift region, and a base region located in the surface of the base region two emitter regions, and an emitter metal covering the two emitter regions;

S2. Thinning the other surface of the semiconductor substrate, and using an ion mask to form the back structure of the TI-IGBT on the thinned surface of the semiconductor substrate, the back structure includes a parallel arrangement and doped A first doped region and a second doped region of opposite types.

Preferably, the formation of the back structure of the TI-IGBT on the thinned surface of the semiconductor substrate using an ion mask specifically includes:

S201, forming a fully doped first doped layer on the thinned surface of the semiconductor substrate;

S202. Set an ion mask with a pattern of a second doped region on the first doped layer, perform local ion doping on the first doped layer to form a second doped region, and the first doped layer The remaining regions of the first doped layer on the impurity layer that are not doped with the second type impurity form a first doped region.

Preferably, the formation of the back structure of the TI-IGBT on the thinned surface of the semiconductor substrate using an ion mask specifically includes:

S211. Set a first ion mask with a first doping region pattern on the thinned surface of the semiconductor substrate, and perform local ion doping on the thinned surface of the semiconductor substrate to form a first doped region;

S212. Set a second ion mask with a second doping region pattern on the thinned surface of the semiconductor substrate, and perform local ion doping on the thinned surface of the semiconductor substrate to form a second doped region.

Preferably, after thinning the other surface of the semiconductor substrate in step S2 and before forming the back surface structure of the TI-IGBT, the method further includes:

The thinned surface of the semiconductor substrate is fully doped, and a buffer layer is formed on the thinned surface of the semiconductor substrate.

Preferably, the base material of the semiconductor substrate is any one of silicon, silicon carbide, gallium nitride, diamond or gallium phosphide.

It can be known from the above-mentioned technical solutions that the semiconductor device manufacturing method provided by the present invention, in the semiconductor device manufacturing process, doping the regions with low local doping accuracy requirements, and the local doping method uses an ion mask to cover the semiconductor substrate. Shielding, in the process of ion implantation, the ions in some areas are allowed to pass through, and the ions in some areas are shielded, and the partial shielding of the semiconductor substrate is realized in only one step. Compared with the prior art, glue coating, exposure, development, etc. are required The process realizes partial shading, and the manufacturing method provided by the invention greatly simplifies the process, shortens the production cycle, and improves the production efficiency; and the cost of manufacturing the ion mask is much higher than that of the equipment required for each process in the photolithography machine and the photolithography process. Reduced, which in turn can reduce the production cost of semiconductor devices.

That is, in the manufacturing process of semiconductor devices with lower requirements for local doping precision, the manufacturing method provided by the present invention can replace the local doping achieved by photolithography and ion implantation processes in the prior art, because the manufacturing method of the present invention The process steps are simple, so the process can be simplified and the production cycle can be shortened. Compared with the expensive photolithography machine, the cost of the ion mask used in the method is greatly reduced, and the production cost of semiconductor devices can be reduced to a certain extent.

The present invention also provides a method for manufacturing a TI-IGBT. The front IGBT cell is formed by the existing photolithography process, and when the doped region on the back of the TI-IGBT is manufactured, it is formed by the method provided above. , due to the large area of the doped region on the back of the TI-IGBT, the local doping accuracy requirements are low, and the expensive photolithography process is used to form local doping, resulting in a large waste, and the TI-IGBT manufacturing method provided by the present invention uses ion The mask realizes local doping, which not only simplifies the manufacturing process of the back side of the TI-IGBT, but also reduces the manufacturing cost of the TI-IGBT.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.

Fig. 1 is a kind of manufacturing method flowchart of semiconductor device provided by the present invention;

Fig. 2 is an ion mask installation method provided by the embodiment of the present invention;

Fig. 3 is another ion mask installation method provided by the embodiment of the present invention;

FIG. 4 is a flow chart of a TI-IGBT manufacturing method provided by an embodiment of the present invention;

Fig. 5 is a kind of TI-IGBT device substrate provided by the embodiment of the present invention;

FIG. 6 is a flow chart of a specific method of step S2 provided by the embodiment of the present invention;

FIG. 7 is a flow chart of a process for forming a first doped layer provided by an embodiment of the present invention;

Fig. 8 is a process flow diagram of forming a second doped region on the surface of the first doped layer according to an embodiment of the present invention;

FIG. 9 is a structure diagram of a TI-IGBT provided by an embodiment of the present invention;

Fig. 10 is another specific method flow chart of step S2 provided by the embodiment of the present invention;

FIG. 11 is a structure diagram of another TI-IGBT provided by an embodiment of the present invention.

Detailed ways

As mentioned in the background technology section, the local doping method in the prior art includes photolithography process and ion implantation process. Since the photolithography process includes multiple steps and requires a photolithography machine to be realized, the local doping method in the prior art Miscellaneous process is loaded down with trivial details and cost is higher.

The inventors have found that the reason for the above phenomenon is that in the process of manufacturing a semiconductor device, due to the small size of the semiconductor device and high requirements for the accuracy of the shape, size and position of the doped region on the semiconductor substrate, the existing In the technology, a photolithography machine is usually used for precise alignment to achieve local doping, but the inventors also found that the doping structure on the surface of some semiconductor devices has lower requirements for the accuracy of the shape, size and position of the doping region. In this case, a lithography machine is also used for local doping. On the one hand, because the lithography process includes multiple processes, the process is cumbersome; on the other hand, the cost of the imaging system and positioning system of the lithography machine is high, and the depreciation rate is very fast. , resulting in a higher cost of the photolithography process.

Based on this, the inventor found through research that a method for manufacturing a semiconductor device is provided to replace the photolithography process, so as to realize the manufacture of a doped region of a semiconductor device that requires less accuracy in shape, size and position. The manufacture of the semiconductor device Methods include:

Provide semiconductor substrates;

doping a first type of impurity on one surface of the semiconductor substrate to form a fully doped first doped layer;

An ion mask with a pattern of through holes is provided on the first doped layer, and the through holes expose the surface of the first doped layer where the second doped region is to be formed;

Doping the first doped layer with the ion mask with the second type impurity, doping the second doped region to be formed to form the second doped region, and doping the rest of the first doped layer that is not doped with the second type impurity The impurity layer region forms a first doped region.

It can be seen from the above technical scheme that the semiconductor device manufacturing method provided by the present invention only uses an ion mask to replace the photoresist or film formed by the photolithography process in the prior art to shield the surface of the semiconductor substrate to form local doping, The local doping process can be realized with only one step of shading and ion implantation, avoiding the local shading in the prior art through the gluing, exposure, development and other processes in the photolithography process and the use of a photolithography machine. The method not only simplifies the process and improves the production efficiency, but also can reduce the use of photolithography machines and reduce the production cost of semiconductor devices.

The above is the core idea of the present application. The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention. rather than all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways that are different from those described here, and those skilled in the art can do similar By extension, the present invention is therefore not limited to the specific examples disclosed below.

Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.

The manufacturing method of the semiconductor device and the manufacturing method of the TI-IGBT provided in the present invention will be specifically described below through several embodiments.

One embodiment of the present invention discloses a method for manufacturing a semiconductor device, the flow chart of which is shown in Figure 1, including:

Step S101: providing a semiconductor substrate.

The base material of the semiconductor substrate is any one of silicon, silicon carbide, gallium nitride, diamond or gallium phosphide, which is not limited in this embodiment.

It should be noted that the manufacturing method of the semiconductor device provided in this embodiment is mainly used in the manufacturing process of the doped region that does not require high precision in shape, size and position, such as a power semiconductor device FRD (Fast Recovery Diode, fast Recovery diode), GTO (Gate Turn-Off Thyristor, the gate can turn off the thyristor), IEGT (Injection Enhanced Gate Transistor, electron injection enhanced gate transistor), IGCT (Integrated Gate-Commutated Thyristor, integrated gate commutation thyristor) , MTO (MOS Controlled Gate Turn-Off Thyristor, MOS Controlled Turn-Off Thyristor), IGDT (Integrated Gate Dual Transistor, Integrated Gate Dual Transistor), etc., during the production process of the back short collector or anode, due to the back short circuit The doped region of the collector or anode has less strict requirements on the accuracy of shape, size and position, and there is no need to use a photolithography process with precise alignment function to realize the shielding of the semiconductor substrate and form local doping. For the formation of the doped region on the semiconductor substrate that requires high precision in shape, size and position, in this embodiment, a photolithography process is preferably used to achieve local doping.

Step S102: Doping a first type of impurity on one surface of the semiconductor substrate to form a fully doped first doped layer;

The first type impurity may be N type impurity or P type impurity, which is not limited in this embodiment.

Step S103: setting an ion mask with a pattern of through holes on the first doped layer, the through holes exposing the surface of the first doped layer where the second doped region is to be formed;

The ion mask described in this embodiment can be a thin sheet formed by processing a metal material, or a thin sheet formed by processing the same material as the photoresist material. In this embodiment, the material of the ion mask is not limited. As long as the ion shield can shield ions during the ion implantation process, the ion shield in this embodiment is preferably a metal sheet. It should be noted that the through hole pattern on the ion mask corresponds to the shape and position of the region to be doped on the semiconductor substrate, and the pattern is the doped region that needs to be implanted on the semiconductor substrate. graphics. The through-hole pattern on the ion mask can allow ions to pass through, thereby forming a doping region with a certain doping type on the semiconductor substrate.

Step S104: Doping the first doped layer provided with an ion mask with a second type of impurity, doping the second doped region to be formed to form a second doped region, and doping the rest of the region that is not doped with the second type of impurity The first doped layer region forms a first doped region.

In this embodiment, it is preferable to use an ion implanter to perform ion doping on the first doped layer provided with an ion mask to dope the second type impurity. When using an ion implanter to perform ion implantation on the semiconductor substrate, as shown in Figure 2, the ion mask 1 and the semiconductor substrate 2 can be overlapped and clamped together by the clamp 3 to form a "composite semiconductor substrate", and then placed in the ion Ion implantation is performed in the implanter. It should be noted that when the ion mask and the semiconductor substrate are clamped together by a clamp, when the ion mask and the semiconductor substrate are fixed, there can be a certain gap, that is, the ion mask and the semiconductor substrate. The fixation between them is a proximity fixation; the ion mask and the semiconductor substrate can also be in direct contact, that is, the fixation between the ion mask and the semiconductor substrate is a contact fixation. In order to facilitate the fixing of the ion mask and the semiconductor substrate together by a clamp, in this embodiment, preferably, the outline of the ion mask is close to the outline of the semiconductor substrate in size and similar in shape.

In this embodiment, setting an ion mask with a through-hole pattern on the first doped layer is specifically: using a clamp to align the ion mask with the semiconductor substrate forming the first doped layer that is fully doped. Pinned together afterwards.

In addition, when ion implantation is performed on the semiconductor substrate using an ion implanter, the ion mask may not be fixed together with the semiconductor substrate through a clamp, especially when producing the same type or the same type of semiconductor devices in large quantities, as As shown in FIG. 3, the ion mask 1 is installed on the ion implanter 4, and then a plurality of semiconductor substrates 2 are placed on the conveyor belt 5, and the semiconductor substrates 2 are sequentially transferred to the bottom of the ion mask 1 by the conveyor belt 5, thereby Rapid local doping of multiple semiconductor substrates.

In this embodiment, setting an ion mask with a pattern of through holes on the first doped layer specifically includes: installing the ion mask on the ion implanter, moving the first doped layer that is fully doped aligning the semiconductor substrate forming the fully doped first doped layer with the ion mask.

The method for manufacturing a semiconductor device provided in this embodiment uses a patterned ion mask to shield the surface of the semiconductor substrate, instead of partially shielding the semiconductor substrate through photolithography processes such as gluing, exposure, and development in the prior art. , and then perform ion implantation on the surface of the semiconductor substrate with the ion mask, because the through hole part of the ion mask can pass through ions, and the non-through hole part can block the passage of ions, so as to realize the partial ion implantation on the semiconductor substrate. Doped. Because the manufacturing process of the ion mask is simple and the cost is relatively low, compared with the prior art that requires a cumbersome and expensive photolithography process to achieve local doping of the semiconductor substrate, the manufacturing method provided in this embodiment is more efficient. Simple, low cost and capable of shortening the production cycle of semiconductor devices.

In addition, when forming a doped region on a thin semiconductor substrate, since the photolithography process includes soft-baking, post-baking and hard-baking of the semiconductor substrate, in these processes, due to high temperature treatment, the semiconductor substrate Warpage or fragments are prone to occur, resulting in defective or damaged devices, reducing the yield of devices and causing greater costs. In the process of using an ion mask to form local doping, the ion mask only needs to be close to or contact the surface of the semiconductor substrate, and there is no need to perform multiple processes on the surface of the semiconductor substrate, and it is not necessary to perform high-temperature treatment on the semiconductor substrate. Therefore, the probability of warping or fragmentation of the semiconductor substrate can be reduced, thereby improving yield and saving cost.

A semiconductor device manufacturing method provided in another embodiment of the present invention includes the following steps:

Provide semiconductor substrates;

setting a first ion mask with a first doped region pattern on one surface of the semiconductor substrate;

Doping the semiconductor substrate provided with the first ion mask with the first type of impurities to form a first doped region;

setting a second ion mask with a second doped region pattern on the surface of the semiconductor substrate forming the first doped region;

The semiconductor substrate provided with the second ion mask is doped with the second type impurity to form a second doped region.

The difference from the previous embodiment is that in this embodiment, two ion masks are used on the surface of the semiconductor substrate to form different doping regions twice, and finally form the required doping pattern. In the actual production of semiconductor devices During the process, the above two manufacturing methods can be selected according to the shape of the doped region of the back structure of the semiconductor device or the structure of the back anode, which is not limited in the present invention.

Another embodiment of the present invention discloses a method for manufacturing a TI-IGBT (Triple mode Integrate-Insulated Gate Bipolar Transistor, triple mode integrated insulated gate bipolar transistor), the TI-IGBT is an IGBT (Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor), VDMOS (Vertical Double diffused MOS, Vertical Double Diffused Metal-Oxide Field Effect Transistor), FRD is a power semiconductor device that combines the structures and functions of the three devices ingeniously.

A method for manufacturing a TI-IGBT disclosed in this embodiment, as shown in FIG. 4 , includes:

S1. Provide a semiconductor substrate, one surface of the semiconductor substrate includes a plurality of IGBT cells, the IGBT cells include a drift region, a base region located in the surface of the drift region, and a base region located in the surface of the base region The two emitter regions, and the emitter metal covering the two emitter regions.

The formation process of the semiconductor substrate is: provide a semiconductor substrate, the material of the semiconductor substrate can be any one of silicon, silicon carbide, gallium nitride, diamond or gallium phosphide, preferably in this embodiment The semiconductor substrate is used as a silicon wafer for detailed description; the semiconductor substrate is fully doped to form a drift region; the drift region is partially shielded by photolithography, and then the doping type and the drift region are doped. Ion implantation of the opposite type of impurity forms a base region in the surface of the drift region; and then through a photolithography process, the base region is partially shielded, and ion implantation with the same doping type as that of the drift region is performed, and the Two emitter regions are formed on the surface of the base region; finally, emitter metal is formed on the two emitter regions, and finally an IGBT unit cell is formed.

As shown in Figure 5, one surface of the semiconductor substrate includes a plurality of IGBT cells, and each IGBT cell includes a drift region 101, a base region 102 located in the surface of the drift region 101, and a base region 102 located in the surface of the base region 102. Two emitter regions 103 , and emitter metal 104 covering the two emitter regions, and an insulating layer 105 is further included between the emitter region 103 and the emitter metal 104 . It should be noted that the doping type of the drift region 101 is the same as that of the emitter region 103 , and is opposite to that of the base region 102 . In this embodiment, the specific doping types of the drift region, the emitter region and the base region are not limited, that is, the doping type of the drift region may be N type or P type, depending on the actual situation.

S2. Thinning the other surface of the semiconductor substrate, and using an ion mask to form the back structure of the TI-IGBT on the thinned surface of the semiconductor substrate.

Wherein, the rear surface structure includes a first doped region and a second doped region which are arranged side by side and have opposite doping types.

It should be noted that, in this embodiment, the formation of the backside structure of the TI-IGBT on the thinned surface of the semiconductor substrate by using an ion mask can be realized by the following two methods. The first method, as shown in Figure 6, specifically includes:

S201, forming a fully doped first doped layer 106 on the thinned surface of the semiconductor substrate, as shown in FIG. 7 ;

S202. Set an ion mask 107 with a second doped region pattern on the first doped layer 106, and perform local ion doping on the first doped layer, as shown in FIG. 8 , finally on the semiconductor substrate The second doped region 108 is formed on the back side, and the remaining part on the first doped layer is the first doped region 109 , as shown in FIG. 9 , is the finally formed TI-IGBT.

That is, when the method forms the first doped region and the second doped region, the semiconductor substrate is shielded only once by an ion mask, and then the second doped region is formed by ion implantation on the partial surface where the first doped layer was originally formed. Wherein the doping type of the first doping region and the second doping region are opposite, for example, when the doping type of the first doping region is P type, the doping type of the second doping region is N type , and when the doping type of the first doping region is N type, the doping type of the second doping region is P type, which is not limited in this embodiment.

The second method of using an ion mask to form the back structure of the TI-IGBT on the thinned surface of the semiconductor substrate, as shown in FIG. 10 , specifically includes:

S211. Set a first ion mask with a first doping region pattern on the thinned surface of the semiconductor substrate, and perform local ion doping on the thinned surface of the semiconductor substrate to form a first doped region;

S212. Set a second ion mask with a second doping region pattern on the thinned surface of the semiconductor substrate, and perform local ion doping on the thinned surface of the semiconductor substrate to form a second doped region.

That is to say, in the second method, when the first doped region and the second doped region are fabricated, an ion mask is used for local shielding to form local doping.

It should be noted that, after thinning the other surface of the semiconductor substrate and before forming the back surface structure of the TI-IGBT, it may also include: doping all the thinned surface of the semiconductor substrate, in the The thinned surface of the semiconductor substrate forms the buffer layer.

As shown in FIG. 11 , it is a TI-IGBT with a buffer layer 110 . Wherein, the buffer layer is located on the surface of the drift region, so that the thickness of the device drift region is reduced, thereby reducing the on-resistance of the device and the on-voltage drop; and the doping type of the buffer layer is the same as that of the device drift region, Therefore, the buffer layer can combine some carriers to achieve the effect of controlling the carrier injection rate on the back of the device, reducing the number of carriers that need to be removed from the drift region of the device when it is turned off, thereby improving the turn-off rate of the device.

In this embodiment, an ion mask is used to partially shield the surface of the semiconductor substrate during the TI-IGBT manufacturing process, thereby adopting a simple process to realize the formation of the back structure of the TI-IGBT. Shading, the process in the realization process is greatly simplified, the production cycle of the device is shortened, and in the process of TI-IGBT production, the use of photolithography machines is reduced, which can reduce the production cost of TI-IGBT to a certain extent.

Each part in this manual is described in a progressive manner, and each part focuses on the difference from other parts, and the same and similar parts of each part can be referred to each other.

The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (15)

1. a manufacture method for semiconductor device, is characterized in that, comprising:

Semiconductor substrate is provided;

Adulterate in a surface of described Semiconductor substrate first kind impurity, forms the first doped layer of all doping;

Described first doped layer is provided with the ion cover of through-hole pattern, and described through hole exposes the surface of described first doped layer the second doped region to be formed;

To the first doped layer doping Second Type impurity being provided with ion cover, in described second doping formation second doped region, doped region to be formed, all the other first doped layer region of not carrying out the doping of Second Type impurity form the first doped region.

2. manufacture method according to claim 1, is characterized in that, the detailed process of described doping first kind impurity and described doping Second Type impurity is: adopt ion implantor to carry out ion implantation.

3. manufacture method according to claim 2, it is characterized in that, the described ion cover being provided with through-hole pattern on described first doped layer is specially: be arranged on by ion cover on described ion implantor, the Semiconductor substrate of the first doped layer that mobile described formation is all adulterated, the Semiconductor substrate of the first doped layer described formation all adulterated is aimed at described ion cover.

4. manufacture method according to claim 2, it is characterized in that, the described ion cover being provided with through-hole pattern on described first doped layer is specially: the Semiconductor substrate of the first doped layer adopting fixture described ion cover and described formation all to be adulterated is fixed together after aiming at.

5. manufacture method according to claim 1, is characterized in that, described ion cover is sheet metal.

6. the manufacture method of semiconductor device according to claim 1, it is characterized in that, described semiconductor device is any one in fast recovery diode, gate level turn-off thyristor, electron injection enhancement gate transistors, integrated gate commutated thyristor, MOS control type turn-off thyristor or integral gate pair transistor.

7. a manufacturing method of semiconductor device, is characterized in that, comprising:

Semiconductor substrate is provided;

The first ion cover of the first doped region pattern is provided with on a surface of described Semiconductor substrate;

The Semiconductor substrate being provided with the first ion cover is carried out to the doping of first kind impurity, form the first doped region;

The second ion cover of the second doped region pattern is provided with at the semiconductor substrate surface of formation first doped region;

The Semiconductor substrate being provided with the second ion cover is carried out to the doping of Second Type impurity, form the second doped region.

8. manufacture method according to claim 7, is characterized in that, the detailed process of the doping of described first kind impurity and the doping of described Second Type impurity is: adopt ion implantor to carry out ion implantation.

9. manufacture method according to claim 7, is characterized in that, described ion cover is sheet metal.

10. the manufacture method of semiconductor device according to claim 7, it is characterized in that, described semiconductor device is any one in fast recovery diode, gate level turn-off thyristor, electron injection enhancement gate transistors, integrated gate commutated thyristor, MOS control type turn-off thyristor or integral gate pair transistor.

The manufacture method of 11. 1 kinds of TI-IGBT, is characterized in that, comprising:

S1, provide Semiconductor substrate, comprise multiple IGBT cellular in a surface of described Semiconductor substrate, described IGBT cellular comprises drift region, is positioned at the base on surface, described drift region, be positioned at two emitter regions of described base region surface, and cover the emitter metal of described two emitter regions;

S2, by thinning for another surface of described Semiconductor substrate, and adopting ion to cover on thinning of the described Semiconductor substrate upper structure forming described TI-IGBT, described structure comprises laid out in parallel and contrary the first doped region of doping type and the second doped region.

12. TI-IGBT manufacture methods according to claim 11, is characterized in that, described employing ion covers on thinning the upper structure forming described TI-IGBT of described Semiconductor substrate, specifically comprises:

S201, the first doped layer that formation is all adulterated on thinning of described Semiconductor substrate;

S202, on described first doped layer, be provided with the ion cover of the second doped region pattern, local ion doping is carried out to described first doped layer, form the second doped region, the first doped layer region that on described first doped layer, all the other do not carry out the doping of Second Type impurity forms the first doped region.

13. TI-IGBT manufacture methods according to claim 11, is characterized in that, described employing ion covers on thinning the upper structure forming described TI-IGBT of described Semiconductor substrate, specifically comprises:

S211, on thinning of described Semiconductor substrate, be provided with the first ion cover of the first doped region pattern, local ion doping carried out to the thinning face of described Semiconductor substrate, forms the first doped region;

S212, on thinning of described Semiconductor substrate, be provided with the second ion cover of the second doped region pattern, local ion doping carried out to the thinning face of described Semiconductor substrate, forms the second doped region.

14. TI-IGBT manufacture methods according to claim 11-13 any one, is characterized in that, in step s 2 by after thinning for another surface of described Semiconductor substrate, before forming the structure of described TI-IGBT, also comprise:

All adulterated in the thinning surface of described Semiconductor substrate, form resilient coating on the thinning surface of described Semiconductor substrate.

15. TI-IGBT manufacture methods according to claim 11, is characterized in that, the base material of described Semiconductor substrate is any one in silicon, carborundum, gallium nitride, diamond or gallium phosphide.