CN104978896A - Monolayer embossing pattern microstructural anti-counterfeiting mark - Google Patents
Monolayer embossing pattern microstructural anti-counterfeiting mark Download PDFInfo
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- CN104978896A CN104978896A CN201410139646.8A CN201410139646A CN104978896A CN 104978896 A CN104978896 A CN 104978896A CN 201410139646 A CN201410139646 A CN 201410139646A CN 104978896 A CN104978896 A CN 104978896A
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- counterfeiting mark
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- text
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- 239000002356 single layer Substances 0.000 title abstract 4
- 238000004049 embossing Methods 0.000 title abstract 3
- 230000000694 effects Effects 0.000 abstract description 8
- 238000003491 array Methods 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 208000025174 PANDAS Diseases 0.000 description 4
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 4
- 240000004718 Panda Species 0.000 description 4
- 235000016496 Panda oleosa Nutrition 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 210000002469 basement membrane Anatomy 0.000 description 2
- 230000003542 behavioural effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000004379 membrane Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Credit Cards Or The Like (AREA)
Abstract
The invention relates to a microstructural anti-counterfeiting mark which has a dynamic effect and concealed property. Two or multiple groups of monolayer two-dimensional micro-image-text arrays which are identical or similar in cycle and identical or different in pattern are overlaid together, and the monolayer embossing pattern microstructural anti-counterfeiting mark is formed. By means of the monolayer embossing pattern microstructural anti-counterfeiting mark, images are not shown under the illumination of a common light fixture or the natural light, while micro-image-text structures which are amplified obviously and the dynamic effect can be observed under the illumination of hard light or a point light source, and the special anti-counterfeiting concealed property is achieved. The anti-counterfeiting mark is novel and unique in structure, diversified in product form and wide in application scope.
Description
Technical field
The present invention relates to one and there is dynamic effect, concealed microstructure anti-counterfeiting mark, the micro-picture and text array of identical for two or more sets cycles or close, that pattern is identical or different individual layer two dimension is overlaped, forms the anti-counterfeiting mark of individual layer relief pattern microstructure.
Background technology
The banknote of current existing multiple country have employed the anti-fake safety line with dynamic effect, as Sweden's version in 2006 1000 Kronas, 100 dollar bill of U.S.'s distribution in 2013.Some companies in recent years, as hewlette-packard also have employed the anti-counterfeiting mark with dynamic effect on its product.In these anti-fake safety lines and anti-counterfeiting mark, enlarged image can produce continuous dislocation according to the change of people's observation visual angle.Their essential structure is all add by miniature convex lens array layer and miniature picture and text array stack the double-decker formed, and the distance between two layers is determined by the focal length parameter of lens.Its weak point is the thickness that the face type of miniature convex lens surface projection adds anti-fake safety line and anti-counterfeiting mark.
At Chinese patent 201020143542.1, in 201220325232.0, disclose the Microlens anti-counterfeiting mark adopting miniature binary phase lens (also known as Fresnel zone lens) array to replace miniature convex lens array to make.Because binary phase lenticule belongs to the planar lenses with relief surface structure, so the thickness of anti-counterfeiting mark relatively can be reduced.And the micro-picture and text amplification effect obtained and Dynamic Recognition feature are identical with the anti-fake safety line adopting miniature convex lens array to make or anti-counterfeiting mark.The anti-counterfeiting mark be made up of binary phase microlens array remains micro-lens arrays layer and micro-picture and text array layer superposes the double-decker formed, and the distance between two layers is also determined by the focal length parameter of lens.
Above-mentioned double-deck anti-fake safety line and anti-counterfeiting mark shortcoming are, the transparent membrane with specific thicknesses or other light transmissive materials must be filled between micro-lens arrays layer and micro-picture and text array layer, complex manufacturing technology, production cost are high, and due to the easy temperature distortion of lenticule, be difficult to adopt hot stamping process to produce in enormous quantities.
Summary of the invention
The present invention is directed to the shortcoming being superposed double-deck anti-fake safety line and the anti-counterfeiting mark existence formed by micro-lens arrays layer and micro-picture and text array layer, there is provided one can lenticular special microstructure, namely there is the microstructure anti-counterfeiting mark of individual layer relief pattern structure.This microstructure anti-counterfeiting mark is not appearing picture under ordinary lamp and lantern illumination or natural light, and can show under high light or pointolite irradiate and amplify phenomenon and dynamic effect with adopting lenticular double-deck anti-fake safety line or the similar micro-picture and text of anti-counterfeiting mark.
the technical solution adopted for the present invention to solve the technical problems is:first on computers the micro-picture and text array of the individual layer that two or more sets cycles are identical or close, pattern is identical or different of design two dimension is overlaped, the overlapping figure of micro-picture and text array is exposed on photoetching hectograph by recycling microelectronics platemaking equipment, makes the photoresist mother matrix with relief surface structure after development.Then utilize photoresist mother matrix, through the manufacture craft such as electroforming, mold pressing of laser holographic anti counterfeiting label, complete production of the present invention.
Microstructure in the present invention, the micro-picture and text array namely overlaped is two groups of micro-picture and text arrays or the micro-picture and text array of many groups, and the cycle often organizing micro-picture and text array is identical or close, pattern is identical or different.The arrangement mode of micro-picture and text array has multiple:
1, according to micro-picture and text array of square mode arrangement.Namely in micro-picture and text array, the center on line of adjacent four unit is square.
2, according to micro-picture and text array that equilateral triangle mode arranges.The line of centres of adjacent three unit namely in micro-picture and text array is equilateral triangle.
3, according to micro-picture and text array that other modes selected arbitrarily arrange.It can be the mode of arbitrarily arrangement.
The actual micro structure array arrangement mode selected is determined when micro structure array designs.In same anti-counterfeiting mark, the arrangement mode of the micro-picture and text array of each group is consistent.The cycle of each group of micro-picture and text array can be equal, also can be close.When each group of micro-picture and text array pattern is overlapping, the orientation between the micro-picture and text array of each group can be taken as unanimously, also can select the angle that suitable within the scope of 0 degree to 45 degree, to make micro-picture and text obtain suitable amplification.This suitable angle needs to determine through calculating in advance or be determined by experiment.
Micro-picture and text fill random speckle, the contrast of exaggerated micro-picture and text can be increased.
Architectural feature of the present invention is individual layer relief surface microstructure graph, and the concavo-convex fluctuating of relief pattern is very little, generally within 1 micron.Therefore the general thickness of anti-counterfeiting mark can be accomplished very little, has ultra-slim features.Graphic element in the present invention can do larger, as 100 to 200 microns are even larger, so just can micro-picture and text pattern of comparison complexity, and such as numeral, character, Chinese character, logo etc.The present invention can also be made into blocking film mark.These all double-deck anti-fake safety lines and anti-counterfeiting mark are difficult to accomplish.
Product of the present invention has following observation recognition feature:
1, not appearing picture under ordinary lamp and lantern illumination or natural light, has false proof disguise;
2, each group of exaggerated micro-picture and text array image can be shown under high light (as sunshine) irradiates or under pointolite (as single led light source) irradiates, and each group of micro-picture and text array image be exaggerated be continuous moving along with the translation of pointolite, presents behavioral characteristics;
3, when pointolite is close or away from the process identified, the micro-picture and text pattern of each group has the phenomenon of continuously zooming.
More than observing recognition feature, is that the present invention is different from other anti-fake safety lines and the exclusive feature of anti-counterfeiting mark.
the invention has the beneficial effects as follows,the anti-counterfeiting mark of individual layer relief pattern microstructure only has the figure of one deck relief surface structure, has ultra-slim features, can micro-picture and text pattern of comparison complexity.And possess exclusive observation recognition feature, the behavioral characteristics under the disguise namely under ordinary light source and high light or pointolite and continuously zooming phenomenon.The anti-counterfeiting mark of individual layer relief pattern microstructure is that a kind of security is very high, identifies very convenient and characteristic anti-counterfeiting mark.
Novel structure of the present invention is unique, product form has pastes mark, hot-stamping mark, Anti-fake packaging film, false proof tie rod, anti-fake safety line, paper threading etc., the scope of application is very wide, be specially adapted to the false proof of paper money coin safety line, certificate, bank card, admission ticket etc., and all kinds of high-grade goods and special article is false proof.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is partial cross section's enlarged diagram of essential structure of the present invention.
Fig. 2 is the overlapping schematic diagram of micro-picture and text array of the embodiment of the present invention.
Embodiment
As shown in Figure 1,1 is transparent plastic basement membrane, and 2 is the Information Level applied on the surface of transparent plastic basement membrane 1, and 3 is the overlapping figure with two or more sets micro-picture and text arrays of individual layer relief surface structure made on Information Level 2.
Embodiment: Fig. 2 is the close-up schematic view of the overlapping pattern of the embodiment of the present invention.Have employed two groups of micro-picture and text arrays in the present embodiment, one group is the array of miniature " panda " pattern, and its unit size is 140 microns.Another group is the array of miniature word " PANDA ", and its unit size is 135 microns.Two group patterns all adopt square mode to arrange, and after overlapping, the angle of the horizontal direction of two group patterns is 5 degree.The overlapping figure of two group patterns is made photoresist mother matrix, then through having the manufacture craft such as electroforming, mold pressing of laser holographic anti counterfeiting label, produces blocking film of the present invention mark.Under ordinary light source illumination, not appearing picture in mark, can see in mark " PANDA " word of " panda " pattern and the amplification having amplification with spot light, they present dynamic effect and continuously zooming phenomenon along with moving of pointolite.
Claims (12)
1. individual layer relief pattern microstructure anti-counterfeiting mark, is characterized in that: overlaped by two or more sets micro-picture and text array patterns, and composition only has the microstructure anti-counterfeiting mark of one deck relief pattern structure.
2. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the cycle forming each group of micro-picture and text of anti-counterfeiting mark is identical.
3. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the cycle forming each group of micro-picture and text of anti-counterfeiting mark is different, but is close.
4. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the pattern forming each group of micro-picture and text of anti-counterfeiting mark is identical.
5. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the pattern forming each group of micro-picture and text of anti-counterfeiting mark is not identical.
6. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the arrangement mode of micro-picture and text array arranges according to square mode.
7. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the arrangement mode of micro-picture and text array arranges according to equilateral triangle mode.
8. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the arrangement mode of micro-picture and text array arranges according to mode selected arbitrarily.
9. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: in same anti-counterfeiting mark, and the arrangement mode of the micro-picture and text array of each group is consistent.
10. individual layer relief pattern microstructure anti-counterfeiting mark according to claim 1, is characterized in that: the orientation of two or more sets micro-picture and text array patterns equitant is consistent.
11. individual layer relief pattern microstructure anti-counterfeiting marks according to claim 1, is characterized in that: the orientation of two or more sets micro-picture and text array patterns equitant is inconsistent, have 0 degree in the horizontal direction to the angle within the scope of 45 degree.
12. individual layer relief pattern microstructure anti-counterfeiting marks according to claim 1, is characterized in that: on micro-picture and text, be filled with random speckle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410139646.8A CN104978896A (en) | 2014-04-09 | 2014-04-09 | Monolayer embossing pattern microstructural anti-counterfeiting mark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410139646.8A CN104978896A (en) | 2014-04-09 | 2014-04-09 | Monolayer embossing pattern microstructural anti-counterfeiting mark |
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| Publication Number | Publication Date |
|---|---|
| CN104978896A true CN104978896A (en) | 2015-10-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410139646.8A Pending CN104978896A (en) | 2014-04-09 | 2014-04-09 | Monolayer embossing pattern microstructural anti-counterfeiting mark |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106780999A (en) * | 2017-02-17 | 2017-05-31 | 沧州市金田科贸工程有限公司 | The false proof card identifying system of ATM |
| CN106923458A (en) * | 2015-12-31 | 2017-07-07 | 动力专家有限公司 | Method of forming markings on articles and articles having markings thereon |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1775564A (en) * | 2005-11-23 | 2006-05-24 | 中国科学院光电技术研究所 | Micro character array anti-fake mark and its making method |
| CN201829132U (en) * | 2010-08-12 | 2011-05-11 | 侯德胜 | Bar anti-counterfeit mark |
| CN203503242U (en) * | 2013-10-22 | 2014-03-26 | 成都得迈科贸有限公司 | Micro lens anti-counterfeiting mark with single-layer embossed pattern |
-
2014
- 2014-04-09 CN CN201410139646.8A patent/CN104978896A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1775564A (en) * | 2005-11-23 | 2006-05-24 | 中国科学院光电技术研究所 | Micro character array anti-fake mark and its making method |
| CN201829132U (en) * | 2010-08-12 | 2011-05-11 | 侯德胜 | Bar anti-counterfeit mark |
| CN203503242U (en) * | 2013-10-22 | 2014-03-26 | 成都得迈科贸有限公司 | Micro lens anti-counterfeiting mark with single-layer embossed pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106923458A (en) * | 2015-12-31 | 2017-07-07 | 动力专家有限公司 | Method of forming markings on articles and articles having markings thereon |
| CN106780999A (en) * | 2017-02-17 | 2017-05-31 | 沧州市金田科贸工程有限公司 | The false proof card identifying system of ATM |
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Application publication date: 20151014 |