CN104953005A - High-power LED packaging - Google Patents
High-power LED packaging Download PDFInfo
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- CN104953005A CN104953005A CN201410120469.9A CN201410120469A CN104953005A CN 104953005 A CN104953005 A CN 104953005A CN 201410120469 A CN201410120469 A CN 201410120469A CN 104953005 A CN104953005 A CN 104953005A
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000003292 glue Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000741 silica gel Substances 0.000 claims abstract description 18
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 239000000499 gel Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 3
- 150000003839 salts Chemical class 0.000 claims 2
- 239000008187 granular material Substances 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 29
- 238000012360 testing method Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 12
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005375 photometry Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- Led Device Packages (AREA)
Abstract
Description
技术领域:本发明涉及LED技术领域,特别涉及一种大功率LED封装。Technical field: The present invention relates to the field of LED technology, in particular to a high-power LED package.
背景技术:LED发光二极管,是一种可直接将电能转化为可见光和辐射能的发光器件,发光二极管的结构包括两大部分:承载部有两个不同极性的导电端,承载部中设有晶片及荧光材料,利用金线连接晶片的电极层与导电端,最后完成封装工序。与传统照明技术相比,这种新型光源具有高效节能、长寿命、小体积、成本低、等领先优势。目前常用的LED主要是利用芯片的光线与荧光材料的波长结合,进而形成特定光色表现结果。Background technology: LED light-emitting diode is a light-emitting device that can directly convert electrical energy into visible light and radiation energy. The structure of the light-emitting diode includes two parts: the carrying part has two conductive ends with different polarities, and the carrying part is equipped The chip and the fluorescent material are connected to the electrode layer and the conductive end of the chip with gold wires, and finally the packaging process is completed. Compared with traditional lighting technology, this new type of light source has leading advantages such as high efficiency, energy saving, long life, small size, and low cost. At present, the commonly used LED mainly uses the combination of the light of the chip and the wavelength of the fluorescent material to form a specific light color performance result.
利用LED芯片激发荧光粉的光转换方式可以实现各种颜色光的输出,这也是目前LED实现照明白光的主要途径。其基本原理是:在电的作用下,晶片透过荧光材料射出的光线与荧光材料的波长结合,从而形成特定的光色。例如常见的白光LED,主要是利用蓝光芯片加上黄色荧光粉,芯片所发出的蓝光透过黄色荧光材料射出,经过蓝、黄光结合,形成白光表现效果。The light conversion method of using LED chips to excite phosphors can realize the output of various colors of light, which is also the main way for LEDs to achieve white lighting. The basic principle is: under the action of electricity, the light emitted by the chip through the fluorescent material combines with the wavelength of the fluorescent material to form a specific light color. For example, common white light LEDs mainly use blue light chips plus yellow phosphor powder. The blue light emitted by the chip is emitted through the yellow fluorescent material, and the blue and yellow light are combined to form a white light performance effect.
然而目前LED在应用时,经常遇到黄圈和光斑问题,LED的黄圈和光斑直接影响到照明效果。照成黄圈和光斑的一个原因是支架与芯片的结构光线,芯片测光发射比较复杂,不能直接激发外围荧光粉发光,二十通过多重漫反射后与荧光粉混合发光,且由于透镜的折射率不同,导致芯片外侧与芯片中心产生白光的色温不同意,产生黄圈。However, at present, when LEDs are used, they often encounter problems of yellow circles and light spots. The yellow circles and light spots of LEDs directly affect the lighting effect. One of the reasons for the yellow circle and light spot is the structured light of the bracket and the chip. The photometric emission of the chip is relatively complicated, and it cannot directly stimulate the peripheral phosphor to emit light. After multiple diffuse reflections, it mixes with the phosphor to emit light, and due to the refraction of the lens The color temperature of the white light produced on the outside of the chip and the center of the chip is different, resulting in a yellow circle.
造成黄圈与光斑的另一个原因是荧光粉。目前运用最广泛的黄色荧光粉是YAG系列荧光粉,此系列的荧光粉D50都在17um以上,颗粒大、分体团聚严重、颗粒流动性差等,这些正是引起光斑主要原因。因为荧光粉的折射率大于或等于1.85,与硅胶的折射率不同,二硅胶折射率一般在1.5左右。由于两者折射率的不匹配,以及荧光粉颗粒尺寸远大于光散射极限,出现散射光的波长与入射光不一致,因而在荧光粉颗粒表面存在光散射,破坏了出光的均匀性,进而出现黄圈。Another cause of yellow circles and spots is phosphor. At present, the most widely used yellow phosphors are YAG series phosphors. The D50 of this series of phosphors is above 17um, the particles are large, the separation is serious, and the particle fluidity is poor. These are the main reasons for the light spots. Because the refractive index of phosphor is greater than or equal to 1.85, which is different from that of silica gel, the refractive index of disilica gel is generally around 1.5. Due to the mismatch of the refractive index between the two, and the size of the phosphor particles is much larger than the light scattering limit, the wavelength of the scattered light is inconsistent with the incident light, so there is light scattering on the surface of the phosphor particles, which destroys the uniformity of the light output, and then appears yellow. lock up.
发明内容:针对上述的缺陷,本发明的目的在于提供一种LED荧光胶及LED支架,以使LED发光更为均匀,有效改善光色质量,更好的解决黄圈问题。Summary of the invention: In view of the above-mentioned defects, the object of the present invention is to provide a LED fluorescent glue and an LED bracket, so that the LED can emit light more uniformly, effectively improve the quality of light color, and better solve the yellow circle problem.
本发明为一种大功率LED封装,包括LED发光芯片、LED支架,芯片表面涂覆荧光胶、支架上方有透镜,荧光胶涂覆在芯片表面位置厚度大于芯片侧边位置,是涂覆荧光胶形成弧形,其弧度与透镜弧度一致,荧光胶通过在大颗粒荧光粉加入小颗粒混合,把混合后荧光粉和硅胶结合搅拌一段时间后进行抽真空处理。The invention is a high-power LED package, including LED light-emitting chips, LED brackets, fluorescent glue coated on the surface of the chip, and a lens above the bracket. The thickness of the fluorescent glue coated on the surface of the chip is greater than that on the side of the chip. Form an arc, and its arc is consistent with the lens arc. The fluorescent glue is mixed by adding small particles to the large particle phosphor, and the mixed phosphor and silica gel are combined and stirred for a period of time before vacuuming.
大颗粒荧光粉重量为a,小颗粒荧光粉重量为b,a和b的比例关系为a/b=(a+b)/a或a2=bc,其中c=a+b,a/b=1.5~1.7。The weight of the large-particle phosphor is a, and the weight of the small-particle phosphor is b. The ratio between a and b is a/b=(a+b)/a or a 2 =bc, where c=a+b, a/b =1.5~1.7.
所述的一种大功率LED封装,其特征在于,所述支架碗杯杯壁与杯底形成的角度α为40°-50°,碗杯高度h为0.3mm-0.45mm。The above-mentioned high-power LED package is characterized in that the angle α formed by the wall of the bracket bowl and the bottom of the cup is 40°-50°, and the height h of the bowl is 0.3mm-0.45mm.
所述芯片尺寸为35mil×35mil~45mil×45milThe chip size is 35mil×35mil~45mil×45mil
本发明的LED支架能使芯片最大测光通过碗杯斜度,只经一次反射,便与芯片表面光束接近平行,以80~100°出光,确保测光与芯片表面光发射同意,直接与荧光粉混合发光。所述的LED支架的碗杯深度配合碗杯杯壁斜度,即碗杯杯壁与杯底形成角度α,能更好地使涂覆在芯片侧面的荧光胶均匀分布。The LED bracket of the present invention can make the maximum photometry of the chip pass through the slope of the bowl cup, and after only one reflection, it is close to parallel to the light beam on the surface of the chip, and the light is emitted at 80-100°, ensuring that the photometry and the light emission of the chip surface are consistent, and directly with the phosphor Mixed glow. The depth of the bowl of the LED bracket matches the slope of the wall of the bowl, that is, the angle α is formed between the wall of the bowl and the bottom of the cup, which can better evenly distribute the fluorescent glue coated on the side of the chip.
通过在大颗粒荧光粉中加入小颗粒混合,能够使硅胶折射率提高到1.8以上,降低光散射,有效改善光色质量,更好地解决光斑问题。在颗粒尺寸较大的荧光粉中掺入小尺寸颗粒,以便与大颗粒混合后所发射的波长和芯片波长更好配合形成白光,而且混合后的折射率更接近硅胶折射率,降低光散射,有效地提高荧光粉均匀度,改善光色质量,修复光斑。By adding small particles into the large-particle fluorescent powder, the refractive index of silica gel can be increased to above 1.8, light scattering can be reduced, the quality of light color can be effectively improved, and the problem of light spots can be better solved. Small-sized particles are added to phosphors with larger particle sizes to better match the wavelength emitted by the large particles with the wavelength of the chip to form white light, and the refractive index after mixing is closer to the refractive index of silica gel, reducing light scattering. Effectively improve the uniformity of phosphor powder, improve the quality of light color, and repair light spots.
附图说明Description of drawings
图1是LED封装步骤流程图;Figure 1 is a flow chart of LED packaging steps;
图2测试屏和LED位置示意图;Figure 2 Schematic diagram of test screen and LED position;
图3是支架俯视图;Figure 3 is a top view of the bracket;
图4是支架截面图;Fig. 4 is a sectional view of the bracket;
图5是芯片侧面出光示意图;Fig. 5 is a schematic diagram of light output from the side of the chip;
图6是荧光粉混合工艺示意图;Fig. 6 is a schematic diagram of phosphor powder mixing process;
图7是荧光粉表面涂覆和透镜覆盖放大图。Figure 7 is an enlarged view of phosphor surface coating and lens coverage.
具体实施方式:Detailed ways:
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图,对本发明进行进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.
通常LED封装是将引线连接到LED芯片的电极上,确保半导体芯片和下层电路间的电性和机械性的互相接续,同时保护好LED芯片,不让其受到机械、热、潮湿及其它外来冲击,且起到提高发光效率的作用。参见图1,LED封装步骤流程简要说明如下:Usually LED packaging is to connect the leads to the electrodes of the LED chip to ensure the electrical and mechanical connection between the semiconductor chip and the underlying circuit, and at the same time protect the LED chip from mechanical, heat, moisture and other external shocks , and play a role in improving the luminous efficiency. Referring to Figure 1, a brief description of the LED packaging steps is as follows:
1.固晶1. Die bonding
发光芯片用银胶固定在特殊支架上,烘烤加热固化。The light-emitting chip is fixed on a special support with silver glue, and is cured by baking and heating.
2.焊线2. Welding wire
将外引线连接到LED芯片的电极上。Connect the outer leads to the electrodes of the LED chip.
3.配胶3. Glue matching
将大小颗粒荧光粉与硅胶按比例进行混合调制,均匀搅拌10-15分钟,抽真空20分钟。Mix the fluorescent powder with large and small particles and silica gel in proportion, stir evenly for 10-15 minutes, and vacuum for 20 minutes.
4.点荧光胶4. Dot fluorescent glue
用点胶枕头将荧光胶点到支架中心,让其均匀的覆盖在芯片表面上。Use a dispensing pillow to dispense the fluorescent glue to the center of the bracket, allowing it to evenly cover the surface of the chip.
5.烘烤5. Baking
烘烤的目的是使荧光胶固化,烘烤要求对温度进行监控,防止批次性不良。荧光胶烘烤的温度一般控制在150℃,烘烤时间30分钟。根据实际情况可以调整。The purpose of baking is to cure the fluorescent glue, and the baking requires temperature monitoring to prevent bad batches. The baking temperature of fluorescent glue is generally controlled at 150°C, and the baking time is 30 minutes. It can be adjusted according to the actual situation.
6.盖透镜6. Cover lens
采用专业的盖透镜机把透镜自动盖到LED芯片上。Use a professional cap lens machine to automatically cap the lens on the LED chip.
7.灌胶7. Glue filling
把盖好透镜的半成品注入填充硅胶Inject the semi-finished product with the covered lens into the filled silicone
8.烘烤8. Baking
使填充硅胶充分固化,一般条件为120℃,烘烤时间20分钟。To fully cure the filled silica gel, the general condition is 120°C, and the baking time is 20 minutes.
9.分光分色9. Spectral color separation
将封装好的大功率成品进行测试,包括漏电测试,想对色温、光通量、色品坐标X/Y、显色指数等参数分档测试。Test the packaged high-power finished product, including leakage test, and test parameters such as color temperature, luminous flux, chromaticity coordinates X/Y, and color rendering index.
本发明实施制作一个1W白光LED,采用350mA恒流电源驱动,电压3.0-3.4V。The present invention implements and manufactures a 1W white light LED, which is driven by a 350mA constant current power supply with a voltage of 3.0-3.4V.
光斑实验测试平台通过9点发测试每个LED的9个点色坐标,以判断单个LED出射光斑各个方向上发光的空间均匀性。The light spot experiment test platform tests the color coordinates of 9 points of each LED through 9 points to judge the spatial uniformity of the light emitted by a single LED in all directions.
实验条件:采用350mA恒流电源驱动,电压3.3V左右。LED距离屏的距离都为60cm,测试所用工具为:CHROMA METER CS-100MINOLTA色彩色差计。Experimental conditions: Driven by a 350mA constant current power supply, the voltage is about 3.3V. The distance between the LED and the screen is 60cm, and the tool used for the test is: CHROMA METER CS-100MINOLTA color difference meter.
色度坐标的离散性可以用每个LED的9个测试点的色度坐标的标准方差来表示,设9个测试点的色坐标为(Xi,Yi)(i=1,2,…,9),9个测试点的色坐标平均值为(-X,-Y),则标准差为δThe dispersion of the chromaticity coordinates can be expressed by the standard deviation of the chromaticity coordinates of the 9 test points of each LED. Let the chromaticity coordinates of the 9 test points be (X i , Y i ) (i=1, 2,… , 9), the color coordinate mean value of 9 test points is (-X,-Y), then the standard deviation is δ
一般,标准方差δ值在0.01以下,人眼不容易分辨色度差异,说明光色均匀。Generally, if the standard deviation δ value is below 0.01, it is not easy for the human eye to distinguish the difference in chromaticity, indicating that the light color is uniform.
实验测试平台建立在暗室,目的在于减少环境光线的影响,先把LED固定在墙上,在其正前方放置一个白色屏,屏的中心位置的高度和LED一致,屏和墙保持平行。为了方便测试和统计我们选取了组成正方形的9点作为代表性的测量点。测试屏50和LED100位置参见图2。The experimental test platform is built in a dark room to reduce the influence of ambient light. First fix the LED on the wall, and place a white screen directly in front of it. The height of the center of the screen is the same as that of the LED, and the screen is parallel to the wall. For the convenience of testing and statistics, we selected 9 points forming a square as representative measuring points. Refer to FIG. 2 for the positions of the test screen 50 and the LED 100 .
根据实验要求制作一个LED芯片支架10,支架的俯视图参见图3,支架碗杯20杯壁与杯底形成角度α,参见图4支架的截面图。图5是芯片侧面出光示意图,根据反射定律,θi=θr(θ入射角,θr反射角),法线5垂直杯壁,入射光线4经反射后变为出射光线6,碗杯深度h为杯壁最高点与杯底的垂直高度。According to the experimental requirements, an LED chip support 10 is manufactured. The top view of the support is shown in FIG. 3 . The cup wall of the support bowl 20 forms an angle α with the bottom of the cup. See FIG. 4 for the cross-sectional view of the support. Figure 5 is a schematic diagram of the light output from the side of the chip. According to the law of reflection, θi=θr (θincident angle, θr reflection angle), the normal line 5 is perpendicular to the cup wall, and the incident light 4 becomes the outgoing light 6 after reflection. The depth h of the bowl is the cup The vertical height between the highest point of the wall and the bottom of the cup.
同时为了更有效抑制光线透过透镜后产生这是形成的异色光圈货光斑,本发明还通过在大颗粒荧光粉中加入小颗粒混合,其中大颗粒荧光粉60半径是小颗粒荧光粉70的1.5倍,把混合后荧光粉90与硅胶80结合交办10-15分钟后进行抽真空处理形成荧光胶7,然后把它涂覆在支架10上,因故刚分混合工艺示意图参见图6。At the same time, in order to more effectively suppress the heterochromatic aperture or light spot that is formed after the light passes through the lens, the present invention also mixes small particles into the large particle phosphor powder, wherein the radius of the large particle phosphor powder 60 is that of the small particle phosphor powder 70 1.5 times, combine the mixed fluorescent powder 90 and silica gel 80 for 10-15 minutes, then vacuumize to form fluorescent glue 7, and then coat it on the bracket 10. See Figure 6 for a schematic diagram of the mixing process.
实施例1Example 1
角度α为40°,碗杯深度h为0.3mm,将LED发光芯片1用银胶固定在支架10上。并烘烤加热固化,其中芯片尺寸为35mil×35mil;然后将金线2焊接在芯片1正、负极;在芯片1表面涂覆荧光胶7,为了有效抑制光线透过透镜9后产生折射形成的异色光圈或光斑,涂覆在芯片1表面位置厚度大于芯片侧边位置,只是涂覆因故肛交7形成弧形,其弧度与所盖透镜弧度一致,并进行烘烤成型,在支架上方盖上透镜9,注入填充硅胶8,并进行烘烤成型,荧光粉表面涂覆和透镜覆盖放大图参见图7。The angle α is 40°, the depth h of the bowl is 0.3 mm, and the LED light-emitting chip 1 is fixed on the bracket 10 with silver glue. And bake and heat to cure, wherein the chip size is 35mil×35mil; then solder the gold wire 2 to the positive and negative electrodes of the chip 1; coat the fluorescent glue 7 on the surface of the chip 1, in order to effectively suppress the refraction of the light after passing through the lens 9 The heterochromatic aperture or light spot is coated on the surface of the chip 1 with a thickness greater than that on the side of the chip, but the coating forms an arc for some reason, and its arc is consistent with the arc of the covered lens, and it is baked and formed, and covered on the bracket The upper lens 9 is filled with silica gel 8 and baked for molding. For the enlarged view of phosphor surface coating and lens coverage, see FIG. 7 .
实施例2Example 2
角度α为45°,碗杯深度h为0.35mm,将LED发光芯片1用银胶固定在支架10上。并烘烤加热固化,其中芯片尺寸为38mil×38mil;然后将金线2焊接在芯片1正、负极;在芯片1表面涂覆荧光胶7,为了有效抑制光线透过透镜9后产生折射形成的异色光圈或光斑,涂覆在芯片1表面位置厚度大于芯片侧边位置,只是涂覆因故肛交7形成弧形,其弧度与所盖透镜弧度一致,并进行烘烤成型,在支架上方盖上透镜9,注入填充硅胶8,并进行烘烤成型。The angle α is 45°, the depth h of the bowl is 0.35 mm, and the LED light-emitting chip 1 is fixed on the bracket 10 with silver glue. And baked and heated to cure, the size of the chip is 38mil×38mil; then the gold wire 2 is soldered to the positive and negative electrodes of the chip 1; the fluorescent glue 7 is coated on the surface of the chip 1, in order to effectively prevent the light from passing through the lens 9 and form the refraction The heterochromatic aperture or light spot is coated on the surface of the chip 1 with a thickness greater than that on the side of the chip, but the coating forms an arc for some reason, and its arc is consistent with the arc of the covered lens, and it is baked and formed, and covered on the bracket The upper lens 9 is filled with silica gel 8 and baked for molding.
实施例3Example 3
角度α为50°,碗杯深度h为0.45mm,将LED发光芯片1用银胶固定在支架10上。并烘烤加热固化,其中芯片尺寸为45mil×45mil;然后将金线2焊接在芯片1正、负极;在芯片1表面涂覆荧光胶7,为了有效抑制光线透过透镜9后产生折射形成的异色光圈或光斑,涂覆在芯片1表面位置厚度大于芯片侧边位置,只是涂覆因故肛交7形成弧形,其弧度与所盖透镜弧度一致,并进行烘烤成型,在支架上方盖上透镜9,注入填充硅胶8,并进行烘烤成型。The angle α is 50°, the depth h of the bowl is 0.45 mm, and the LED light-emitting chip 1 is fixed on the bracket 10 with silver glue. And bake and heat to cure, wherein the chip size is 45mil×45mil; then solder the gold wire 2 to the positive and negative electrodes of the chip 1; coat the fluorescent glue 7 on the surface of the chip 1, in order to effectively suppress the refraction of the light after passing through the lens 9 The heterochromatic aperture or light spot is coated on the surface of the chip 1 with a thickness greater than that on the side of the chip, but the coating forms an arc for some reason, and its arc is consistent with the arc of the covered lens, and it is baked and formed, and covered on the bracket The upper lens 9 is filled with silica gel 8 and baked for molding.
实验表面,当角度α=40°~50°,入射光线4与反射光线形成80~100°夹角,经一次反射后,就能与芯片表面光色接近平行,确保侧面光线与芯片表面光线发射统一以80~100°出光,直接与荧光粉混合发光。碗杯深度h=0.3mm~0.45mm,可以更好的配合碗杯角度α,使涂覆在芯片侧面荧光粉分布。On the experimental surface, when the angle α=40°~50°, the incident light 4 forms an angle of 80~100° with the reflected light, and after one reflection, it can be nearly parallel to the light color of the chip surface, ensuring that the side light and the chip surface light are emitted uniformly The light is emitted at 80-100°, and it is directly mixed with phosphor to emit light. The depth of the bowl h=0.3mm~0.45mm, which can better match the angle α of the bowl, so that the phosphor powder coated on the side of the chip can be distributed.
设大颗粒为a,小颗粒为b,以下实验a/b不同比例后,通过九点光斑测验结果Let the large particle be a, and the small particle be b. After the following experiments with different ratios of a/b, the results of the nine-point spot test are passed.
实验表明大颗粒荧光粉中与小颗粒配比符合以下关系a/b=(a+b)/a或a2=bc,其中c=a+b,a/b=1.5~1.7为较佳比例。大颗粒与小颗粒荧光粉混合后,由于大颗粒比小颗粒荧光粉沉淀速率要打,而使用年度高的硅胶具有抑制大颗粒沉淀的特点,这样有效地确保大小颗粒的均匀性分布,混合后的折射率更接近硅胶折射率,使硅胶折射率提高到1.8以上,降低光散射,有效地提高荧光粉均匀度,改善光色质量,修复光斑。Experiments show that the ratio of large particle phosphor to small particle meets the following relationship a/b=(a+b)/a or a 2 =bc, where c=a+b, a/b=1.5~1.7 is a better ratio . After mixing large particles and small particle phosphors, the precipitation rate of large particles is faster than that of small particle phosphors, and the use of high-grade silica gel has the characteristics of inhibiting the precipitation of large particles, which effectively ensures the uniform distribution of large and small particles. After mixing The refractive index of the silica gel is closer to the refractive index of silica gel, which increases the refractive index of silica gel to above 1.8, reduces light scattering, effectively improves the uniformity of phosphor powder, improves the quality of light color, and repairs light spots.
本发明的LED支架能使芯片最大测光通过碗杯斜度,只经一次反射,与芯片表面光线发射统一以80~100°出光,确保侧光与芯片表面光发射统一,直接与荧光粉混合发光。所述的LED支架的碗杯深度配合碗杯杯壁吸毒,即碗杯杯壁与杯底形成角度α,能更好地使涂覆在芯片侧面荧光粉均匀分布。The LED bracket of the present invention can make the maximum photometry of the chip pass through the slope of the bowl cup, and after only one reflection, it is unified with the light emission on the surface of the chip at 80-100°, ensuring that the side light and the light emission on the surface of the chip are unified, and directly mixed with the phosphor to emit light . The depth of the bowl of the LED bracket matches the wall of the bowl for taking drugs, that is, the wall of the bowl and the bottom of the cup form an angle α, which can better evenly distribute the phosphor powder coated on the side of the chip.
同时通过在大颗粒荧光粉中加入小颗粒混合,有效地确保大小颗粒的均匀性分布,而且混合后的折射率更接近硅胶折射率,使硅胶折射率提高到1.8以上,降低光三色,有效地提高因故刚分均匀度,改善光色质量,修复光斑。At the same time, by adding small particles to the large particle phosphor, it can effectively ensure the uniform distribution of large and small particles, and the refractive index after mixing is closer to the refractive index of silica gel, so that the refractive index of silica gel can be increased to above 1.8, reducing the three colors of light, effectively Maximize the uniformity of rigid distribution, improve the quality of light and color, and repair the spot.
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| CN101510581A (en) * | 2009-03-19 | 2009-08-19 | 旭丽电子(广州)有限公司 | LED and relevant backlight module |
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