CN104944951A - Preparation method of BMN ceramic target - Google Patents
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Abstract
Description
技术领域technical field
本发明属于陶瓷靶材制备领域,具体涉及一种BMN陶瓷靶材的制备方法。The invention belongs to the field of preparation of ceramic targets, and in particular relates to a preparation method of BMN ceramic targets.
背景技术Background technique
靶材是磁控溅射镀膜的溅射源,靶材的好坏对薄膜的性能起至关重要的作用,因此高品质的靶材是保证薄膜质量的前提和基础,大量研究表明,影响靶材品质的因素主要有:纯度、致密度、结构取向、晶粒大小及分布、尺寸、形状等,其中衡量靶材品质最重要的指标是靶材的相对密度、纯度、结晶取向及其微观结构的均匀性。The target is the sputtering source of the magnetron sputtering coating. The quality of the target plays a vital role in the performance of the film. Therefore, high-quality targets are the premise and basis for ensuring the quality of the film. A large number of studies have shown that the influence of the target The main factors of target material quality are: purity, density, structural orientation, grain size and distribution, size, shape, etc. Among them, the most important indicators to measure the quality of the target material are the relative density, purity, crystal orientation and microstructure of the target material. uniformity.
溅射过程对靶材的致密度的要求很高,如果靶材结构的致密性较差,具有高能量密度的Ar+轰击靶材时,会导致靶表面大块物质的剥落,从而使得薄膜表面具有较多的大颗粒。这将严重影响薄膜表面的平整度,最终导致薄膜性能的恶化。此外,磁控溅射过程中高能量密度的Ar+轰击,也会导致靶材的升温,为了能够更好地承受靶材内部的热应力,因此需要获得高密度和高强度的靶材。The sputtering process has high requirements on the density of the target material. If the target material structure is poor in density, when Ar+ with high energy density bombards the target material, it will cause the bulk material on the target surface to peel off, so that the film surface has More large particles. This will seriously affect the flatness of the film surface and eventually lead to the deterioration of film performance. In addition, the Ar+ bombardment with high energy density in the magnetron sputtering process will also cause the target to heat up. In order to better withstand the thermal stress inside the target, it is necessary to obtain a high-density and high-strength target.
靶材的纯度是靶材品质的主要性能指标之一。薄膜性能的好坏很大程度上受靶材纯度的影响。溅射沉积薄膜的主要污染源是靶材中的杂质以及靶材气孔中的氧气和水。实际应用中,靶材的用途对其所含杂质含量有不同的要求。The purity of the target is one of the main performance indicators of the target quality. The performance of the thin film is largely affected by the purity of the target material. The main pollution sources of sputter deposited films are impurities in the target and oxygen and water in the pores of the target. In practical applications, the use of the target has different requirements on the impurity content it contains.
人们已采用射频磁控溅射(RF sputting)、脉冲激光沉积(PLD)、金属有机物沉积(MOD)、化学溶液分解等方法制备了BMN底电极薄膜。然而,要通过射频磁控溅射法和脉冲激光沉积等方法制备高质量的BMN薄膜,前提是必须制备高质量的BMN陶瓷靶材。BMN bottom electrode films have been prepared by radio frequency magnetron sputtering (RF sputtering), pulsed laser deposition (PLD), metal organic deposition (MOD), and chemical solution decomposition. However, to prepare high-quality BMN thin films by radio frequency magnetron sputtering and pulsed laser deposition, the premise is that high-quality BMN ceramic targets must be prepared.
因为陶瓷靶材的好坏将直接影响到薄膜的化学成分、致密性和结晶状况。通常,靶材的密度不仅影响溅射时的沉积速率、溅射膜粒子的密度和放电现象等,还影响着溅射薄膜的电学和光学性能。因此,如何获得结构均匀致密的BMN陶瓷靶材是获得高性能薄膜材料的关键所在。Because the quality of the ceramic target will directly affect the chemical composition, compactness and crystallization of the film. Generally, the density of the target not only affects the deposition rate during sputtering, the density of sputtered film particles and discharge phenomena, but also affects the electrical and optical properties of the sputtered film. Therefore, how to obtain a BMN ceramic target with a uniform and dense structure is the key to obtaining a high-performance thin film material.
发明内容Contents of the invention
本发明的目的之一是克服现有技术中获得的BMN陶瓷靶材性能较差的问题,提供一种BMN陶瓷靶材的制备方法,应用本方法能够获得结构均匀致密的BMN陶瓷靶材。One of the purposes of the present invention is to overcome the problem of poor performance of BMN ceramic targets obtained in the prior art, and provide a method for preparing BMN ceramic targets. By applying this method, BMN ceramic targets with uniform and dense structure can be obtained.
为解决上述技术问题,采用的技术方案是:In order to solve the above technical problems, the technical solution adopted is:
一种BMN陶瓷靶材的制备方法,具有如下步骤:A method for preparing a BMN ceramic target, comprising the steps of:
步骤一:BMN粉体的制备Step 1: Preparation of BMN powder
以Bi2O3,MgO和Nb2O5粉末为起始原料,使摩尔比为1.65:1:1.5,以无水乙醇为介质球磨6~10h,将物料于80~100℃恒温干燥箱中干燥;Use Bi 2 O 3 , MgO and Nb 2 O 5 powders as starting materials, make the molar ratio 1.65:1:1.5, use absolute ethanol as the medium for ball milling for 6-10 hours, and place the materials in a constant temperature drying oven at 80-100°C dry;
将混合好的物料在空气或氧气气氛中预烧,温度为700~900℃,保温1~4h,然后自然降温至室温,得到BMN粉体;Pre-fire the mixed material in air or oxygen atmosphere at a temperature of 700-900°C, keep it warm for 1-4 hours, and then naturally cool down to room temperature to obtain BMN powder;
步骤二:生坯的制备Step 2: Preparation of green body
将所述步骤一制得的BMN粉体进行二次球磨6~10h,于80~100℃恒温干燥箱中干燥,后研磨并过筛,添加粘合剂造粒;The BMN powder obtained in the first step is subjected to secondary ball milling for 6-10 hours, dried in a constant temperature drying oven at 80-100°C, then ground and sieved, and added with a binder to granulate;
将造粒好的粉料单轴压制成型,制成直径为65mm厚为6mm的BMN生坯,压力为10MPa;The granulated powder is uniaxially pressed to form a BMN green body with a diameter of 65mm and a thickness of 6mm, and the pressure is 10MPa;
步骤三:靶材的烧结Step 3: Sintering of the target
将成型的BMN陶瓷在500~700℃保温40~50h脱胶,升温时间为10~15h,之后在氧气气氛中1000~1100℃烧结,保温2~10h,得到所需的靶材。The formed BMN ceramics are degummed at 500-700°C for 40-50 hours, and the heating time is 10-15 hours, and then sintered at 1000-1100°C in an oxygen atmosphere and kept for 2-10 hours to obtain the required target.
进一步的,所述步骤一中的球磨时间为8h,ZrO2球作为研磨体,ZrO2球、Bi2O3,MgO和Nb2O5粉末总重量和无水乙醇的质量比为1:2:1;所述预烧中,分别在750℃、800℃、850℃和900℃下保温2小时煅烧。优选的预烧温度为850℃。Further, the ball milling time in the first step is 8h, ZrO 2 balls are used as the grinding body, and the mass ratio of ZrO 2 balls, Bi 2 O 3 , MgO and Nb 2 O 5 powders to the total weight of absolute ethanol is 1:2 : 1; in the pre-calcination, heat preservation at 750° C., 800° C., 850° C. and 900° C. for 2 hours and calcining respectively. The preferred pre-firing temperature is 850°C.
进一步的,所述步骤一中采用氧气气氛替代空气,以5℃/min的速率升温,在500~600℃开始充入O2,750~900℃保温之后随炉冷却,在500~600℃停止充入O2。Further, in the first step, an oxygen atmosphere is used to replace air, the temperature is raised at a rate of 5°C/min, and O 2 is filled at 500-600°C, kept at 750-900°C and cooled with the furnace, and stopped at 500-600°C Fill with O 2 .
进一步的,所述步骤二中的二次球磨为8h,过筛120目;所述的粘合剂为5wt%聚乙烯醇溶液,所述的聚乙烯醇溶液和预烧粉料的质量比约为1:10;所述步骤二中的将造粒好的粉料静置时间为24h,生坯成型保压时间为5min,在300MPa下等静压静置5min。Further, the secondary ball milling in the step 2 is 8 hours, and the sieve is 120 meshes; the binder is 5wt% polyvinyl alcohol solution, and the mass ratio of the polyvinyl alcohol solution to the calcined powder is about The ratio is 1:10; the resting time of the granulated powder in the step 2 is 24 hours, the green body molding holding time is 5 minutes, and the isostatic pressure is placed under 300 MPa for 5 minutes.
进一步的,所述步骤三中的排胶温度为600℃,升温时间为12h,保温时间为36h;所述步骤三中的烧结为将所述BMN生坯从室温升至100℃保温10min,后从100℃升至烧结温度1000~1100℃,升温速率为5℃/min。优选的烧结温度为1050℃。Further, the debinding temperature in step 3 is 600°C, the heating time is 12h, and the holding time is 36h; the sintering in step 3 is to raise the BMN green body from room temperature to 100°C for 10 minutes, Then it rises from 100°C to a sintering temperature of 1000-1100°C with a heating rate of 5°C/min. The preferred sintering temperature is 1050°C.
本发明的有效果为:本发明方法制备的BMN陶瓷靶材具有结构致密、性能优良的优点,制备的BMN陶瓷靶材结构致密,气孔较少,晶粒规整,大小约为2~5μm,靶材的组分化学式为Bi1.48MgNb1.5O6.97,其相对密度达到最大值97.03wt%,并且介电性能优异,1MHz下的介电常数为170.4,介电损耗为6.25×10-4。The effect of the present invention is: the BMN ceramic target prepared by the method of the present invention has the advantages of compact structure and excellent performance; The composition chemical formula of the material is Bi 1.48 MgNb 1.5 O 6.97 , its relative density reaches the maximum value of 97.03wt%, and its dielectric properties are excellent, the dielectric constant at 1MHz is 170.4, and the dielectric loss is 6.25×10 -4 .
附图说明Description of drawings
图1为本发明在不同温度下合成的BMN预烧粉体的XRD图谱,(a)750℃,(b)800℃,(c)850℃,(d)900℃;Fig. 1 is the XRD spectrum of the BMN calcined powder synthesized at different temperatures in the present invention, (a) 750°C, (b) 800°C, (c) 850°C, (d) 900°C;
图2为本发明850℃合成BMN预烧粉体的SEM二次电子像图;Fig. 2 is the SEM secondary electron image of the BMN calcined powder synthesized at 850°C in the present invention;
图3为本发明900℃合成BMN预烧粉体的SEM二次电子像图;Fig. 3 is the SEM secondary electron image of the BMN calcined powder synthesized at 900°C in the present invention;
图4为本发明经850℃预烧后球磨12h的BMN粉体的SEM二次电子像;Fig. 4 is the SEM secondary electron image of the BMN powder of the present invention after being calcined at 850°C and ball-milled for 12 hours;
图5为本发明不同烧结温度下的BMN陶瓷的XRD图谱,(a)1010℃,(b)1030℃,(c)1050℃,(d)1070℃,(e)1090℃;Figure 5 is the XRD patterns of BMN ceramics at different sintering temperatures of the present invention, (a) 1010°C, (b) 1030°C, (c) 1050°C, (d) 1070°C, (e) 1090°C;
图6不同烧结温度下制备BMN陶瓷阳离子摩尔比;Figure 6 prepares BMN ceramic cation molar ratios under different sintering temperatures;
图7为不同烧结温度保温2h下烧结的BMN陶瓷断面的SEM二次电子像;(a)1010℃,(b)1030℃,(c)1050℃,(d)1070℃,(e)1090℃;Figure 7 is the SEM secondary electron image of the BMN ceramic section sintered at different sintering temperatures for 2 hours; (a) 1010°C, (b) 1030°C, (c) 1050°C, (d) 1070°C, (e) 1090°C ;
图8为BMN陶瓷样品的相对密度和线性收缩率随烧结温度的变化曲线;Fig. 8 is the variation curve of relative density and linear shrinkage of BMN ceramic sample with sintering temperature;
图9为不同烧结温度下BMN陶瓷的频率特性曲线,(a)1kHz-1MHz,(b)1MHz;Figure 9 is the frequency characteristic curves of BMN ceramics at different sintering temperatures, (a) 1kHz-1MHz, (b) 1MHz;
图10为通过XRF测得的不同保温对BMN陶瓷组分变化的影响;Figure 10 is the influence of different heat preservation measured by XRF on the composition change of BMN ceramics;
图11为不同保温时间条件下制备BMN陶瓷断面的二次电子像,(a)2h,(b)4h,(c)6h,(d)8h,(e)10h;Figure 11 is the secondary electron image of the cross section of BMN ceramics prepared under different holding time conditions, (a) 2h, (b) 4h, (c) 6h, (d) 8h, (e) 10h;
图12为BMN陶瓷样品的相对密度和线性收缩率随烧结保温时间的变化曲线;Fig. 12 is the variation curve of relative density and linear shrinkage of BMN ceramic samples with sintering holding time;
图13为1050℃下不同保温时间条件下制备BMN陶瓷的频率特性曲线,(a)1kHz-1MHz,(b)1MHz。Figure 13 is the frequency characteristic curves of BMN ceramics prepared under different holding time conditions at 1050°C, (a) 1kHz-1MHz, (b) 1MHz.
具体实施方式Detailed ways
下面结合实施例进一步说明本发明,而不是限制本发明的范围。Below in conjunction with embodiment further illustrate the present invention, but not limit the scope of the present invention.
实施例1BMN陶瓷靶材的制备Preparation of Example 1 BMN Ceramic Target
一、原料1. Raw materials
原料为三氧化二铋的纯度为99.0wt%采购于温州市化学用料厂,氧化镁纯度为97.0wt%采购于上海振欣试剂厂,五氧化二铌纯度为99.5wt%采购于国药集团化学试剂有限公司,还包括蒸馏水和无水乙醇。The raw material is bismuth trioxide with a purity of 99.0wt% purchased from Wenzhou Chemical Materials Factory, magnesium oxide with a purity of 97.0wt% purchased from Shanghai Zhenxin Reagent Factory, and niobium pentoxide with a purity of 99.5wt% purchased from Sinopharm Chemicals Reagent Co., also includes distilled water and absolute ethanol.
二、BMN陶瓷靶材的制备2. Preparation of BMN ceramic target
步骤一:BMN粉体的制备Step 1: Preparation of BMN powder
根据化学式Bi1.5Mg1.0Nb1.5O7,对预处理后的Bi2O3、MgO、Nb2O5等原料进行质量计算。考虑烧结过程中Bi2O3的挥发,Bi过量10wt%称量。配料后,将称得的原料放入球磨罐混合,以无水乙醇作为分散剂,球、料、乙醇质量比为1:2:1进行球磨,球磨时间为8h。主要目的是使原料均匀混合,并且细化粉料。球磨后将粉料进行烘干、研磨、过120目筛网。分别在750℃、800℃、850℃和900℃下保温2小时预烧。预烧时尽量将粉料压实,以减少煅烧过程中Bi的挥发。According to the chemical formula Bi 1.5 Mg 1.0 Nb 1.5 O 7 , the mass of raw materials such as Bi 2 O 3 , MgO, Nb 2 O 5 after pretreatment was calculated. Considering the volatilization of Bi2O3 during the sintering process, Bi was weighed in excess of 10wt%. After batching, put the weighed raw materials into a ball mill tank for mixing, use absolute ethanol as a dispersant, and perform ball milling with a mass ratio of balls, material, and ethanol at 1:2:1, and the ball milling time is 8 hours. The main purpose is to mix the raw materials evenly and refine the powder. After ball milling, the powder is dried, ground, and passed through a 120-mesh sieve. Pre-burn at 750°C, 800°C, 850°C and 900°C for 2 hours. During pre-calcination, the powder should be compacted as much as possible to reduce the volatilization of Bi during the calcination process.
步骤二:生坯的制备Step 2: Preparation of green body
将预烧后的粉料进行二次球磨,球磨时间为8h。二次球磨的目的主要是细化结晶的粉料,提高后续烧结的反应活性。球磨后经过干燥、研磨、过120目筛网,添加粘合剂进行造粒。粘合剂采用5wt%聚乙烯醇(PVA)溶液作为造粒的粘合剂,PVA溶液和预烧粉料的质量比约为1:10。The pre-burned powder is subjected to secondary ball milling, and the ball milling time is 8 hours. The purpose of secondary ball milling is mainly to refine the crystallized powder and improve the reactivity of subsequent sintering. After ball milling, it is dried, ground, passed through a 120-mesh sieve, and added with a binder for granulation. The adhesive uses 5wt% polyvinyl alcohol (PVA) solution as the adhesive for granulation, and the mass ratio of the PVA solution to the calcined powder is about 1:10.
造粒后的粉料静置24小时后压片。压片机所用压力为10MPa,保压时间为5min,随后使其压力缓慢得到释放,随后在300MPa下等静压静置5min,使其更加紧实,从而获得表面光洁、无裂纹的米白色BMN溅射用靶材生坯。The granulated powder was left to stand for 24 hours and then compressed into tablets. The pressure used in the tablet press is 10MPa, the holding time is 5min, and then the pressure is released slowly, and then isostatically pressed at 300MPa for 5min to make it more compact, so as to obtain off-white BMN with a smooth surface and no cracks Green target for sputtering.
步骤三:靶材的烧结Step 3: Sintering of the target
本发明方法采用的烧成工艺是常压烧结。由于靶材生坯中添加了粘合剂聚乙烯醇,在高温环境下聚乙烯醇容易受热分解。为了减少烧结过程中粘合剂的快速排出,导致靶材内部含有大量气孔以及内部应力分布不均的情况,烧结前,需对靶材生坯进行高温排胶处理。由于陶瓷靶材尺寸较大,排胶过程中收缩应力容易导致靶材出现裂纹,所以排胶的升温速率应尽量慢一些。本发明方法中,排胶温度为600℃,升温12h,保温36h。The sintering process adopted by the method of the present invention is normal pressure sintering. Since the binder polyvinyl alcohol is added to the target green body, the polyvinyl alcohol is easily decomposed by heat in a high-temperature environment. In order to reduce the rapid discharge of the binder during the sintering process, resulting in a large number of pores inside the target and uneven distribution of internal stress, it is necessary to perform high-temperature debinding treatment on the green target body before sintering. Due to the large size of the ceramic target, the shrinkage stress during the debinding process is likely to cause cracks in the target, so the heating rate of the debinding should be as slow as possible. In the method of the present invention, the degumming temperature is 600° C., the temperature is raised for 12 hours, and the temperature is kept for 36 hours.
本发明方法BMN陶瓷靶材的烧结采用埋烧,首先是生坯从室温升至100℃保温10min,接着从100℃升至烧结温度1000~1100℃,升温速率为5℃/min。在烧结温度下保温2~10h,随后随炉自然冷却至室温,即可获得结构致密的陶瓷靶材。The sintering of the BMN ceramic target in the method of the present invention adopts buried firing. First, the green body is raised from room temperature to 100°C for 10 minutes, and then raised from 100°C to the sintering temperature of 1000-1100°C, with a heating rate of 5°C/min. Insulate at the sintering temperature for 2 to 10 hours, and then naturally cool to room temperature with the furnace to obtain a ceramic target with a dense structure.
将烧结获得陶瓷靶材进行表面抛光,使其两个表面光滑平行。光滑平整的表面能够紧密贴合溅射仪中的靶材装置台,有利于溅射过程中靶材的冷却,防止离子轰击诱发的靶材高温,产生应力导致靶材开裂。The surface of the sintered ceramic target is polished so that its two surfaces are smooth and parallel. The smooth and flat surface can closely fit the target device table in the sputtering instrument, which is conducive to the cooling of the target during the sputtering process, and prevents the high temperature of the target induced by ion bombardment, which will cause stress to cause the target to crack.
实施例2BMN陶瓷靶材的表征The characterization of embodiment 2BMN ceramic target
(1)相结构分析(1) Phase structure analysis
X射线衍射技术(XRD)是材料物相鉴定的重要手段。通过XRD,可以对预烧合成产物进行分析,并对烧结靶材的相结构进行鉴定。本实验中采用X射线衍射仪(ARL X'TRA,Thermo Electron Co.,Switzerland)对BMN陶瓷靶材进行物相鉴定。X射线源采用Cu靶Kа线,波长λ=0.15406nm,仪器的主要工作参数为:加速电压为40kV,工作电流为35mA,扫描速度为5/m,扫描的角度范围为10°~60°。X-ray diffraction (XRD) is an important means of material phase identification. Through XRD, the pre-sintered synthesis product can be analyzed, and the phase structure of the sintered target can be identified. In this experiment, an X-ray diffractometer (ARL X'TRA, Thermo Electron Co., Switzerland) was used for phase identification of BMN ceramic targets. The X-ray source adopts Cu target Kа line, the wavelength λ=0.15406nm, the main working parameters of the instrument are: the accelerating voltage is 40kV, the working current is 35mA, the scanning speed is 5/m, and the scanning angle range is 10°~60°.
(2)形貌分析(2) Shape analysis
将陶瓷样品断开进行抛光,在低于烧结温度100℃的条件下热腐蚀30min,用JFC-1600型离子溅射仪镀金,通过扫描电子显微镜(SEM,Ja)的二次电子像(SEI,Secondary ElectronImage)模式观察陶瓷样品的形貌结构。通过SEM对样品断面的表征,样品的晶粒尺寸、气孔的状况、晶粒与晶粒之间的结合状况等都可以直接观察到。The ceramic samples were cut off and polished, and then etched for 30 minutes under the condition of 100 °C lower than the sintering temperature, and then gold-plated with a JFC-1600 ion sputtering device, and the secondary electron image (SEI, Secondary Electron Image) mode to observe the morphology and structure of ceramic samples. Through the characterization of the sample cross section by SEM, the grain size of the sample, the state of the pores, and the bonding state between the grains can be directly observed.
(3)组分分析(3) Component analysis
采用X射线荧光光谱仪(XRF,ARL 9900XRF,Thermo Scientific,Switzerland)对靶材进行元素成分分析。The elemental composition of the target was analyzed by X-ray fluorescence spectrometer (XRF, ARL 9900XRF, Thermo Scientific, Switzerland).
(4)密度的测量(4) Measurement of density
基于阿基米德原理,采用排水法对陶瓷样品的体积密度ρ进行测量,所用电子天平的精度为0.001g。计算公式为:Based on Archimedes' principle, the volume density ρ of ceramic samples was measured by the drainage method, and the accuracy of the electronic balance used was 0.001g. The calculation formula is:
式中m0为经过干燥的样品在空气中的质量(单位g);m1为经过充分吸水后的样品在空气中的质量(单位:g);m2为经过充分吸水后的样品在水中的质量(单位g),ρ0为水的密度(单位:g/cm3)。In the formula, m 0 is the mass of the dried sample in the air (unit: g); m 1 is the mass of the sample in the air after fully absorbing water (unit: g); m 2 is the mass of the sample in water after fully absorbing water The mass (unit g), ρ 0 is the density of water (unit: g/cm 3 ).
其测量过程如下:先将制备好的陶瓷样品清洗干净,放入烘箱干燥后,测量样品在空气中的质量,记为m0。将样品在煮沸的蒸馏水中加热30min使其充分吸水,取出冷却测得样品的湿重,记为m1。将样品放在细铜网中,一同浸在水中,悬挂在天平上称重,记为m21;取出样品称量铜网重量,记为m22。样品在水中的悬重则为。根据公式计算样品的体积密度ρ。The measurement process is as follows: first clean the prepared ceramic sample, put it in an oven to dry, and measure the mass of the sample in the air, which is recorded as m 0 . Heat the sample in boiling distilled water for 30 minutes to fully absorb water, take it out and cool it to measure the wet weight of the sample, which is recorded as m 1 . Put the sample in the fine copper mesh, immerse it in water together, hang it on the balance and weigh it, record it as m 21 ; take out the sample and weigh the weight of the copper mesh, record it as m 22 . The suspended weight of the sample in water is then. Calculate the bulk density ρ of the sample according to the formula.
(5)线收缩率的测试(5) Test of line shrinkage
陶瓷生坯经过烧结制成瓷块后的尺寸变化,可以直观地反映陶瓷样品的致密化程度。陶瓷样品的收缩大小用线收缩率(S)来表征,计算公式为:The dimensional change of the ceramic green body after sintering into a ceramic block can directly reflect the densification degree of the ceramic sample. The shrinkage of ceramic samples is characterized by linear shrinkage (S), and the calculation formula is:
上式中D为烧结后陶瓷样品的直径(单位cm);D0为烧结前成型生坯的直径(单位cm)。In the above formula, D is the diameter of the ceramic sample after sintering (in cm); D 0 is the diameter of the green body before sintering (in cm).
(6)介电性能测试(6) Dielectric performance test
在室温条件下,利用精密阻抗分析仪(Agilent 4294A,America)电容量C(nF)和介电损耗tanδ进行测量。用下列公式计算试样的相对介电常数:At room temperature, capacitance C (nF) and dielectric loss tanδ were measured using a precision impedance analyzer (Agilent 4294A, America). Use the following formula to calculate the relative permittivity of the sample:
式中h为陶瓷样品的厚度(单位mm),D为陶瓷样品表面电极的直径(单位:mm)。In the formula, h is the thickness of the ceramic sample (in mm), and D is the diameter of the electrode on the surface of the ceramic sample (in mm).
实施例3BMN陶瓷靶材预烧优选Example 3 BMN ceramic target pre-firing optimization
预烧温度是陶瓷样品制备过程中至关重要的一步,通过预烧生成所需要的产物的主晶相,有利于陶瓷样品的成型和烧结。在750℃、800℃、850℃和900℃的温度对混合原料进行预烧,并保温2h合成BMN预烧粉体。The pre-firing temperature is a crucial step in the preparation of ceramic samples. The main crystal phase of the required product is generated through pre-firing, which is beneficial to the molding and sintering of ceramic samples. The mixed raw materials were calcined at 750°C, 800°C, 850°C and 900°C, and kept for 2 hours to synthesize BMN calcined powder.
图1为不同温度下预烧粉体的XRD图谱。750℃下预烧应的Nb2O5的衍射峰。800℃下预烧的BMN粉体中,原料衍射峰全部消除,但其中存在中间产物BiNdO4。预烧温度升高到850℃后,中间产物消失,合成的BMN粉料呈单一的立方焦绿石结构。随着预烧温度的继续升高,BMN预烧粉料的XRD衍射峰逐渐尖锐,粉料结晶度逐渐增加。预烧温度高虽然有利于晶体的生长,但粉料会产生严重的团聚现象,有时甚至不易粉碎。并且过高的温度会降低粉料的活性,从而导致烧成温度上升,烧成范围缩小。因此,在选择预烧温度时不宜过高。Figure 1 is the XRD pattern of the calcined powder at different temperatures. Diffraction peaks of Nb 2 O 5 precalcined at 750°C. In the BMN powder pre-calcined at 800℃, the diffraction peaks of the raw materials are all eliminated, but the intermediate product BiNdO 4 exists in it. After the pre-calcination temperature increased to 850℃, the intermediate products disappeared, and the synthesized BMN powder showed a single cubic pyrochlore structure. As the calcining temperature continued to increase, the XRD diffraction peaks of the BMN calcined powder gradually became sharper, and the crystallinity of the powder gradually increased. Although high pre-calcination temperature is conducive to the growth of crystals, the powder will cause serious agglomeration, and sometimes it is not easy to crush. And too high temperature will reduce the activity of the powder, which will cause the firing temperature to rise and the firing range to shrink. Therefore, it should not be too high when selecting the pre-burning temperature.
通过BMN预烧粉料的形貌进行分析,发现850℃预烧的BMN粉体颗粒分散SEM对性较好,如图2所示;而900℃预烧的BMN粉料出现严重的团聚现象,如图3所示,烧结活性减小。所以,实验确定850℃为BMN瓷料的预烧温度。Through the analysis of the morphology of the BMN pre-fired powder, it was found that the BMN powder particles pre-fired at 850°C were well dispersed in SEM, as shown in Figure 2; while the BMN powder pre-fired at 900°C showed serious agglomeration, As shown in Figure 3, the sintering activity decreases. Therefore, the experiment determined that 850°C is the pre-firing temperature of BMN porcelain.
由于预烧过程伴随着晶粒长大的过程,预烧后的BMN粉料颗粒较大,不利于靶材的烧结。这是因为颗粒尺寸直接影响了反应速率,颗粒尺寸越小,反应体系的比表面积就越大,反应界面及扩散界面也相应的增加,因此其反应速率较大。图4为850℃预烧后的瓷料经12h二次球磨后的SEM图,球磨后的BMN粉料颗粒尺寸均一,其平均粒径小于1μm。Since the pre-sintering process is accompanied by the process of grain growth, the BMN powder particles after pre-sintering are relatively large, which is not conducive to the sintering of the target. This is because the particle size directly affects the reaction rate. The smaller the particle size, the larger the specific surface area of the reaction system, and the corresponding increase in the reaction interface and diffusion interface, so the reaction rate is higher. Figure 4 is the SEM image of the pre-fired ceramic material at 850°C after 12 hours of secondary ball milling. The particle size of the BMN powder after ball milling is uniform, and its average particle size is less than 1 μm.
实施例4BMN靶材烧结制度的确定Example 4 Determination of BMN target sintering system
烧结制度的确定包括确定烧结过程中的烧成温度、升降温速度、保温时间和烧结气氛等等。一般最佳烧结条件情况下,陶瓷达到最大体积密度,并且又能达到最佳的电性能。确定烧结制度的依据主要有:相图、差热分析、体积密度和烧成收缩曲线。其中体积密度是衡量陶瓷致密度高低和结晶状况的重要手段。烧成温度和保温时间不同,陶瓷的体积密度也不同。The determination of the sintering system includes determining the firing temperature, heating and cooling speed, holding time and sintering atmosphere during the sintering process. Generally, under the best sintering conditions, ceramics can reach the maximum bulk density, and can also achieve the best electrical properties. The basis for determining the sintering system mainly includes: phase diagram, differential thermal analysis, bulk density and firing shrinkage curve. Among them, bulk density is an important means to measure the density and crystallization status of ceramics. The firing temperature and holding time are different, and the bulk density of ceramics is also different.
1、烧结温度的确定1. Determination of sintering temperature
选择850℃预烧,保温2h条件下合成的BMN瓷料,经二次球磨、造粒压片、排胶等工艺后,在1010℃、1030℃、1050℃、1070℃和1090℃的温度下,保温2h进行烧结。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、精密阻抗分析仪等,研究烧结温度对BMN陶瓷的结构及性能的影响,从而确定最佳烧结温度。Select the BMN ceramic material synthesized under the condition of pre-fired at 850°C and heat preservation for 2 hours. , insulation 2h for sintering. The effect of sintering temperature on the structure and properties of BMN ceramics was studied by X-ray diffractometer (XRD), scanning electron microscope (SEM), precision impedance analyzer, etc., so as to determine the optimal sintering temperature.
2、烧结温度对BMN陶瓷相结构的影响2. The effect of sintering temperature on the phase structure of BMN ceramics
由图5可知,各烧结温度下的BMN陶瓷均呈现明显的立方焦绿石结构,未出现其他第二相衍射峰,表明BMN陶瓷样品都为单相结构,结晶良好,1010℃~1090℃的温度范围内,烧结温度对BMN靶材的结构和相组成没有显著的影响。It can be seen from Figure 5 that the BMN ceramics at each sintering temperature exhibited an obvious cubic pyrochlore structure, and no other second-phase diffraction peaks appeared, indicating that the BMN ceramic samples were all single-phase structures with good crystallization, and the temperature range of 1010 ° C to 1090 ° C Inside, the sintering temperature has no significant effect on the structure and phase composition of BMN targets.
(1).烧结温度对BMN陶瓷组分的影响(1). Effect of sintering temperature on BMN ceramic composition
实验通过XRF成分分析研究了不同烧结温度对BMN陶瓷组分的影响,规律如图6所示。图中虚线分别为化学计量条件下Bi/Mg比和(Bi+Nb)/Mg比。随着烧结温度的升高,Bi2O3逐渐产生少量的挥发。初始配料时Bi2O3过量10wt%,BMN陶瓷在1050℃下烧结2h后Bi大约缺少了5.4wt%,计算得到的组分化学式为Bi1.56MgNb1.5O7.09。In the experiment, the influence of different sintering temperatures on the composition of BMN ceramics was studied by XRF composition analysis, and the rules are shown in Figure 6. The dotted lines in the figure represent the Bi/Mg ratio and (Bi+Nb)/Mg ratio under stoichiometric conditions, respectively. With the increase of sintering temperature, a small amount of Bi 2 O 3 volatilizes gradually. The excess of Bi 2 O 3 was 10wt% in the initial batching, and about 5.4wt% of Bi was missing after the BMN ceramics were sintered at 1050°C for 2 hours. The calculated chemical formula of the composition was Bi 1.56 MgNb 1.5 O 7.09 .
(2).烧结温度对BMN陶瓷形貌的影响(2). Effect of sintering temperature on the morphology of BMN ceramics
陶瓷样品的显微形貌可以反映陶瓷的致密度是否良好。晶粒生长均匀,气孔较少,晶粒尺寸适宜的陶瓷样品,其致密度相对较高;反之,若陶瓷样品气孔较多,则致密度较低。图7为不同烧结温度保温2h下烧结的BMN陶瓷断面的SEM二次电子像。随着烧结温度的升高,BMN陶瓷的晶粒尺寸逐渐增大。当烧结温度为1010℃时,BMN陶瓷的晶粒尺寸较小,约为3-4μm,并且样品中气孔较多,结构较松散。当烧结温度提高到1030℃时,样品中仍可观测到较多气孔。当烧结温度达到1050℃时,晶粒大小约5μm左右,气孔数量显著减少,BMN陶瓷样品的晶粒较为规整、晶界清晰。随着烧结温度进一步升高,BMN陶瓷样品的晶粒开始快速长大,当烧结温度达到1090℃时,陶瓷样品中观测到大的闭合气孔,这是因为,到了烧结中后期,孤立的气孔将扩散到晶界上并排除,也就是说晶界上的物质向气孔继续扩散填充,使得致密化继续进行;但在烧结后期,晶粒迅速长大,气孔的排出速率将低于晶界的迁移速率,这些未排除的气孔将脱开晶界,被包裹在晶粒内部,并且高温引起气孔内的气压增大,形成闭合的大气孔,此时气孔的进一步缩小以及排除将不能实现。The microscopic appearance of ceramic samples can reflect whether the density of ceramics is good. Ceramic samples with uniform grain growth, less pores, and appropriate grain size have relatively high density; on the contrary, ceramic samples with more pores have lower density. Figure 7 is the SEM secondary electron image of the cross-section of BMN ceramics sintered at different sintering temperatures for 2 hours. With the increase of sintering temperature, the grain size of BMN ceramics increases gradually. When the sintering temperature is 1010 °C, the grain size of BMN ceramics is small, about 3-4 μm, and there are more pores in the sample, and the structure is looser. When the sintering temperature was increased to 1030°C, more pores could still be observed in the sample. When the sintering temperature reaches 1050 °C, the grain size is about 5 μm, the number of pores is significantly reduced, and the grains of BMN ceramic samples are relatively regular and the grain boundaries are clear. As the sintering temperature further increased, the grains of the BMN ceramic sample began to grow rapidly. When the sintering temperature reached 1090 °C, large closed pores were observed in the ceramic sample. This is because, in the middle and late stages of sintering, the isolated pores will Diffusion to the grain boundary and exclusion, that is to say, the material on the grain boundary continues to diffuse and fill the pores, so that the densification continues; but in the later stage of sintering, the grain grows rapidly, and the discharge rate of the pores will be lower than the migration of the grain boundary These unexcluded pores will break away from the grain boundaries and be wrapped inside the grains, and the high temperature will cause the air pressure in the pores to increase, forming closed large pores. At this time, further shrinkage and exclusion of pores will not be realized.
(3).烧结温度对BMN陶瓷线性收缩率和相对密度的影响(3). Effect of sintering temperature on linear shrinkage and relative density of BMN ceramics
线性收缩率和相对密度是衡量陶瓷致密度高低的最简便的手段。一般情况下,线性收缩率大、相对密度大的陶瓷,其致密度也相应较高。通过理论计算得到BMN陶瓷的理论密度为7.149g/cm3,其体积密度与理论密度的比值即为BMN陶瓷的相对密度。图8为BMN陶瓷样品的相对密度和线性收缩率随烧结温度的变化曲线。可以看出样品的相对密度的变化趋势与其线性收缩率的变化趋势保持一致。随着烧结温度的升高,固体结构中质点的热振动动能增大,其反应能力和扩散能力得到增强,因此加快了物质迁移和扩散速率,坯体中的气体进一步排除,从而陶瓷样品的体积逐渐收缩、密度增大。在烧结温度达到1050℃时,其相对密度达到最大值89.65wt%,此时的线性收缩率为14.54%。然而,随着烧结温度的进一步升高,陶瓷的收缩率达到饱和,但由于Bi2O3的挥发导致靶材的相对密度有所减小。Linear shrinkage and relative density are the easiest means to measure the density of ceramics. In general, ceramics with large linear shrinkage and high relative density have correspondingly high density. Through theoretical calculation, the theoretical density of BMN ceramics is 7.149g/cm 3 , and the ratio of the volume density to the theoretical density is the relative density of BMN ceramics. Fig. 8 is the curve of relative density and linear shrinkage of BMN ceramic samples with sintering temperature. It can be seen that the change trend of the relative density of the sample is consistent with the change trend of its linear shrinkage rate. As the sintering temperature increases, the kinetic energy of thermal vibration of the particles in the solid structure increases, and its reaction ability and diffusion ability are enhanced, so the rate of material migration and diffusion is accelerated, and the gas in the green body is further removed, so that the volume of the ceramic sample Gradually shrink and increase in density. When the sintering temperature reaches 1050°C, its relative density reaches the maximum value of 89.65 wt%, and the linear shrinkage rate at this time is 14.54%. However, with the further increase of the sintering temperature, the shrinkage rate of the ceramic reaches saturation, but the relative density of the target decreases due to the volatilization of Bi2O3 .
(4).烧结温度对BMN陶瓷介电性能的影响(4). Effect of sintering temperature on the dielectric properties of BMN ceramics
不同烧结温度下BMN陶瓷的频率特性曲线如图9所示。从图9a可以看出,在1KHz-1MHz的频率范围内,随着测试频率的增大,各烧结温度下制备的BMN陶瓷的介电常数大小几乎没有变化,频率稳定性较好。而在1kHz-10kHz的频率范围内,介电损耗随着频率的增大迅速减小,在10kHz以后介电损耗虽然还在随着频率的增大而减小,但减小的趋势已经不大,并且其介电损耗的大小已经降至10-4数量级,表明BMN陶瓷是高频稳定性陶瓷。图9b为1MHz下BMN陶瓷的介电常数和介电损耗随烧结温度的变化曲线。随着烧结温度的升高,BMN陶瓷的介电常数先增大后减小,在烧结温度升高到1050℃时,其介电常数达到最大值166.5,这与BMN陶瓷的致密度增加有关。同时可以看出,BMN陶瓷的介电损耗的变化趋势与其介电常数的变化趋势完全相反,在烧结温度为1050℃时,BMN陶瓷的介电损耗最小,为7.23×10-4。这是由于随着烧结温度的升高,BMN陶瓷的晶粒尺寸逐渐增大,但当烧结温度超过1050℃后,BMN陶瓷的晶粒异常长大,晶粒尺寸差异较大,出现过烧现象,从而导致BMN陶瓷的介电性能恶化。The frequency characteristic curves of BMN ceramics at different sintering temperatures are shown in Figure 9. It can be seen from Figure 9a that in the frequency range of 1KHz-1MHz, with the increase of the test frequency, the dielectric constant of the BMN ceramics prepared at each sintering temperature hardly changes, and the frequency stability is better. In the frequency range of 1kHz-10kHz, the dielectric loss decreases rapidly with the increase of frequency. Although the dielectric loss is still decreasing with the increase of frequency after 10kHz, the decreasing trend is not great. , and the size of its dielectric loss has been reduced to 10 -4 orders of magnitude, indicating that BMN ceramics are high-frequency stable ceramics. Fig. 9b is the variation curve of the dielectric constant and dielectric loss of BMN ceramics with sintering temperature at 1 MHz. As the sintering temperature increases, the dielectric constant of BMN ceramics first increases and then decreases. When the sintering temperature rises to 1050 °C, the dielectric constant reaches a maximum value of 166.5, which is related to the increase in the density of BMN ceramics. At the same time, it can be seen that the variation trend of the dielectric loss of BMN ceramics is completely opposite to that of the dielectric constant. When the sintering temperature is 1050℃, the dielectric loss of BMN ceramics is the smallest, which is 7.23×10 -4 . This is because as the sintering temperature increases, the grain size of BMN ceramics gradually increases, but when the sintering temperature exceeds 1050 °C, the grains of BMN ceramics grow abnormally, the grain size varies greatly, and over-burning occurs , resulting in the deterioration of the dielectric properties of BMN ceramics.
综上所述,烧结温度在1010℃-1050℃的温度范围内,随着烧结温度的升高,BMN陶瓷的相对密度增加,晶粒尺寸增大,有效地改善了陶瓷的介电性能。但是过高的烧结温度也会导致BMN陶瓷的晶粒生长不均匀,晶粒内部封闭气孔,从而使得BMN陶瓷的介电性能恶化。最终选择1050℃为BMN陶瓷的最佳烧结温度。In summary, the sintering temperature ranges from 1010°C to 1050°C. As the sintering temperature increases, the relative density and grain size of BMN ceramics increase, which effectively improves the dielectric properties of the ceramics. However, too high sintering temperature will also lead to uneven grain growth of BMN ceramics, and closed pores inside the grains, which will deteriorate the dielectric properties of BMN ceramics. Finally, 1050℃ was selected as the optimum sintering temperature of BMN ceramics.
3、保温时间的确定3. Determination of holding time
(1).保温时间对BMN陶瓷组分的影响(1). Effect of holding time on BMN ceramic components
确定烧结温度后,在1050℃下烧结,分别保温2h、4h、6h、8h和10h,考察保温时间对BMN陶瓷的影响。图10为通过XRF测得的不同保温对BMN陶瓷组分变化的影响。图中虚线分别为化学计量条件下Bi/Mg比和(Bi+Nb)/Mg比。随着保温时间的延长,Bi2O3有少量的挥发。BMN陶瓷在1050℃下烧结6h后的化学式为Bi1.48MgNb1.5O6.97,与初始配料Bi1.65MgNb1.5O7.225相比,Bi大约缺少了10.3wt%。After determining the sintering temperature, sinter at 1050°C and hold for 2h, 4h, 6h, 8h and 10h respectively to investigate the effect of holding time on BMN ceramics. Figure 10 shows the effect of different heat preservation on the composition change of BMN ceramics measured by XRF. The dotted lines in the figure represent the Bi/Mg ratio and (Bi+Nb)/Mg ratio under stoichiometric conditions, respectively. With the extension of the holding time, a small amount of Bi 2 O 3 volatilized. The chemical formula of BMN ceramics after sintering at 1050℃ for 6h is Bi 1.48 MgNb 1.5 O 6.97 . Compared with the initial batch Bi 1.65 MgNb 1.5 O 7.225 , Bi is about 10.3wt% missing.
(2).保温时间对BMN陶瓷晶粒形貌的影响(2). The effect of holding time on the grain morphology of BMN ceramics
图11为不同保温时间条件下制备BMN陶瓷断面的二次电子像。保温时间2-4h下,BMN陶瓷中还存在明显气孔,陶瓷致密性不高,保温时间为6-10h条件下制备的BMN陶瓷样品结构致密,气孔较少,晶粒规整,呈等径多边形,晶界清晰。同时,随着保温时间的延长,BMN陶瓷的晶粒逐渐长大。烧结工艺中的保温过程主要是晶界移动的过程,保温过程太长会导致晶粒异常长大。1050℃下烧结保温6h条件的BMN陶瓷晶粒大小约为2-5μm,当保温时间延长到10h时,BMN陶瓷晶粒异常增大到10-12μm,可认为保温时间过长;并且随着晶粒的增大,其尺寸差别也逐渐明显,大小分布不均,用于溅射靶材时,将不利于薄膜厚度的均匀性,且会导致溅射速率降低。因此,综合考虑,认为1050℃下保温6h的烧结制度比较符合BMN陶瓷靶材对晶粒尺寸的制备要求。Figure 11 is the secondary electron image of the cross section of BMN ceramics prepared under different holding time conditions. When the holding time is 2-4h, there are still obvious pores in the BMN ceramics, and the density of the ceramics is not high. The BMN ceramic samples prepared under the holding time of 6-10h have a dense structure, less pores, regular grains, and an equidiameter polygon. The grain boundaries are clear. At the same time, with the extension of the holding time, the grains of BMN ceramics grow gradually. The heat preservation process in the sintering process is mainly the process of grain boundary movement. If the heat preservation process is too long, the grains will grow abnormally. The grain size of BMN ceramics sintered at 1050℃ for 6h is about 2-5μm. When the holding time is extended to 10h, the grain size of BMN ceramics increases abnormally to 10-12μm. It can be considered that the holding time is too long; As the size of the particles increases, the size difference is gradually obvious, and the size distribution is uneven. When used for sputtering targets, it will not be conducive to the uniformity of the film thickness, and will lead to a decrease in the sputtering rate. Therefore, considering comprehensively, it is considered that the sintering system at 1050 °C for 6 h is more in line with the preparation requirements of BMN ceramic targets for grain size.
(3).保温时间对BMN陶瓷线性收缩率和相对密度的影响(3). Effect of holding time on linear shrinkage and relative density of BMN ceramics
图12为BMN陶瓷样品的相对密度和线性收缩率随烧结保温时间的变化曲线。样品的相对密度的变化趋势与其线性收缩率的变化趋势保持一致。随着保温时间的延长,BMN陶瓷的相对密度和线性收缩率逐渐增大,在保温时间为6h时趋于饱和,相对密度达到最大值97.03wt%,此时线性收缩率为14.68%。Fig. 12 is the curve of relative density and linear shrinkage of BMN ceramic samples with sintering holding time. The change trend of the relative density of the sample is consistent with the change trend of its linear shrinkage rate. With the extension of the holding time, the relative density and linear shrinkage of BMN ceramics gradually increase, and tend to be saturated when the holding time is 6h, and the relative density reaches the maximum value of 97.03wt%, and the linear shrinkage is 14.68%.
(4).保温时间对BMN陶瓷介电性能的影响(4). The influence of holding time on the dielectric properties of BMN ceramics
1050℃下不同保温时间条件下制备BMN陶瓷的频率特性曲线如图13所示。从图13a可以看出,在1kHz-1MHz的频率范围内,随着测试频率的增大,各保温时间条件下制备的BMN陶瓷的介电常数不随频率变化而变化,频率稳定性较好。而介电损耗在1kHz-10kHz的频率范围内,随着频率的增大迅速减小,在10kHz以后,介电损耗虽然还在随着频率的增大而减小,但减小的趋势已经很小,并且其介电损耗的大小均为10-4数量级,表明BMN陶瓷是高频稳定性陶瓷。图13b为1MHz下BMN陶瓷的介电常数和介电损耗随保温时间的变化曲线。随着保温时间的延长,BMN陶瓷的介电常数先增大后减小,在保温时间为6h时,其介电常数达到最大值170.4,这与BMN陶瓷的致密度随保温时间的变化情况一致。同时可以看出,BMN陶瓷的介电损耗的变化趋势与其介电常数的变化趋势完全相反,在保温时间为6h时,BMN陶瓷的介电损耗最小,为6.25×10-4。The frequency characteristic curves of BMN ceramics prepared under different holding time conditions at 1050°C are shown in Figure 13. It can be seen from Figure 13a that in the frequency range of 1kHz-1MHz, as the test frequency increases, the dielectric constant of the BMN ceramics prepared under various holding time conditions does not change with frequency, and the frequency stability is good. In the frequency range of 1kHz-10kHz, the dielectric loss decreases rapidly with the increase of frequency. After 10kHz, although the dielectric loss is still decreasing with the increase of frequency, the decreasing trend is already very strong. Small, and its dielectric loss is on the order of 10 -4 , indicating that BMN ceramics are high-frequency stable ceramics. Fig. 13b is the variation curve of the dielectric constant and dielectric loss of BMN ceramics with the holding time at 1 MHz. With the extension of the holding time, the dielectric constant of BMN ceramics increases first and then decreases. When the holding time is 6h, the dielectric constant reaches a maximum value of 170.4, which is consistent with the change of the density of BMN ceramics with the holding time. . At the same time, it can be seen that the change trend of the dielectric loss of BMN ceramics is completely opposite to the change trend of its dielectric constant. When the holding time is 6h, the dielectric loss of BMN ceramics is the smallest, which is 6.25×10 -4 .
由上述实施例可以看出本发明方法制备的BMN陶瓷靶材具有结构致密、性能优良的优点,制备的BMN陶瓷靶材结构致密,气孔较少,晶粒规整,大小约为2~5μm,靶材的组分化学式为Bi1.48MgNb1.5O6.97,其相对密度达到最大值97.03wt%,并且介电性能优异,1MHz下的介电常数为170.4,介电损耗为6.25×10-4。From the above examples, it can be seen that the BMN ceramic target prepared by the method of the present invention has the advantages of compact structure and excellent performance. The composition chemical formula of the material is Bi 1.48 MgNb 1.5 O 6.97 , its relative density reaches the maximum value of 97.03wt%, and its dielectric properties are excellent, the dielectric constant at 1MHz is 170.4, and the dielectric loss is 6.25×10 -4 .
本文虽然已经给出了本发明的一些实施例,但是本领域的技术人员应当理解,在不脱离本发明精神的情况下,可以对本文的实施例进行改变。上述实施例只是示例性的,不应以本文的实施例作为本发明权利范围的限定。Although some embodiments of the present invention have been given herein, those skilled in the art should understand that the embodiments herein can be changed without departing from the spirit of the present invention. The above-mentioned embodiments are only exemplary, and the embodiments herein should not be used as limitations on the scope of rights of the present invention.
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