CN104911562A - Purification method of ALD machine cavity body - Google Patents
Purification method of ALD machine cavity body Download PDFInfo
- Publication number
- CN104911562A CN104911562A CN201510229506.4A CN201510229506A CN104911562A CN 104911562 A CN104911562 A CN 104911562A CN 201510229506 A CN201510229506 A CN 201510229506A CN 104911562 A CN104911562 A CN 104911562A
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- Prior art keywords
- board cavity
- ald
- oxygen
- hydrogen
- purifying method
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000000746 purification Methods 0.000 title abstract description 9
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- 239000001301 oxygen Substances 0.000 claims description 47
- 229910052760 oxygen Inorganic materials 0.000 claims description 47
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 208000002925 dental caries Diseases 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000006227 byproduct Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 abstract 3
- 239000003570 air Substances 0.000 abstract 1
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a purification method of an atomic layer deposition (ALD) machine cavity body; the purification method includes the steps: providing a wafer, introducing hexachlorodisilane into the machine cavity body, and carrying out an atomic layer deposition process on the wafer; carrying out depressurization and temperature rising on the machine cavity body; and introducing hydrogen gas and oxygen gas into the machine cavity body simultaneously. In the purification method, the hydrogen gas and the oxygen gas are introduced into the machine cavity body simultaneously, hexachlorodisilane without sufficient reaction in the atomic layer deposition process is subjected to a reaction with the hydrogen gas and the oxygen gas, and a reaction product is carried to the outside of the machine cavity body along with gas flow under a relatively low pressure intensity, so that hexachlorodisilane cannot be subjected to a reaction with water vapor in air, silicon and silicon dioxide by-products are avoided from generating and remaining in the machine cavity body, the performance of a machine is avoided from being affected, and thus residues in the machine is avoided from affecting the atomic layer deposition process.
Description
Technical field
The present invention relates to semiconductor device processing technology field, particularly relate to a kind of purifying method of ALD board cavity.
Background technology
Production of integrated circuits is usually included in semiconducter substrate (wafer) surface deposition material.Ald (Atomic Layer Deposition, ALD) be a kind of method of conventional deposition material, reaction material is sequentially provided in reaction chamber with square one-tenth monoatomic layer structure on a semiconductor substrate, further, can stacking multiple monoatomic layer structure to reach the settling of wanted thickness.The rete of ALD deposition is uniform substantially, have predictable thickness, and its thickness does not change within the scope of whole semiconducter substrate substantially.The rete of ALD deposition even produces uniform thicknesses of layers on the whole surface of micro-scale surface feature with very high-aspect-ratio.Therefore, ALD technique infinitely can repeat thus on the semiconductor substrate surface exposed, accumulate the film layer thickness of expectation with pinpoint accuracy and purity.
Potential difference ald (Potential Difference Atomic Layer Deposition, PDALD) is a kind of new ALD processing method, in PDALD technique, adopts disilicone hexachloride (Si
2cl
6) as reactant, and finally generate membranous layer of silicon oxide in crystal column surface reaction.But, after PDALD technique completes, need brilliant boat to be risen or declines, in the process, a small amount of air enters in board cavity, to make in PDALD process unreacted completely disilicone hexachloride can react with the steam in air, generate silicon or silicon oxide, the surface being attached to board cavity forms residue, thus affects the performance of board.
Summary of the invention
The object of the invention is to, a kind of purifying method of ALD board cavity is provided, make hexachloroethanc pasc reaction residual in board cavity complete, avoid forming residue in board cavity, purification board.
For solving the problems of the technologies described above, the invention provides a kind of purifying method of ALD board cavity, comprising:
Wafer is provided, in described board cavity, passes into disilicone hexachloride, described wafer carries out atom layer deposition process;
Step-down intensification is carried out to described board cavity;
Pass into hydrogen and oxygen to described board cavity simultaneously.
Optionally, after step-down intensification is carried out to described board cavity, before passing into hydrogen and oxygen to described board cavity, pass into oxygen to described board cavity.
Optionally, after described board cavity passes into hydrogen and oxygen simultaneously, first stop passing into hydrogen, then stop passing into oxygen.
Optionally, after stopping passing into oxygen, in described board cavity, nitrogen is passed into.
Optionally, when passing into hydrogen and oxygen to board cavity, the flow of the hydrogen passed into is 2slm-4slm simultaneously.
Optionally, when passing into hydrogen and oxygen to board cavity, the flow of the oxygen passed into is 3slm-5slm simultaneously.
Optionally, the time simultaneously passing into hydrogen and oxygen is 60min-100min.
Optionally, when carrying out ald to wafer, the temperature in described board cavity is 500 DEG C-600 DEG C.
Optionally, the temperature in described board cavity is upgraded to 600 DEG C-800 DEG C.
Optionally, when carrying out ald to wafer, the pressure in described board cavity is 0.4Torr-0.6Torr.
Optionally, the pressure in described board cavity is reduced to 1.0Torr-3.0Torr.
Optionally, after described wafer completes atomic layer deposition process, board automatically performs intensification step-down and passes into the operation of hydrogen and oxygen simultaneously.
The purifying method of ALD board cavity of the present invention, comprising: provide wafer, passes into disilicone hexachloride, described wafer carries out atom layer deposition process in described board cavity; Step-down intensification is carried out to described board cavity; Pass into hydrogen and oxygen to described board cavity simultaneously.In the present invention, pass into hydrogen and oxygen in board cavity simultaneously, make to carry out the disilicone hexachloride of fully reaction in the process of atomic deposition and hydrogen and oxygen reaction, resultant of reaction brings to outside board cavity with air-flow under relatively low pressure, making disilicone hexachloride can not react with the steam in air the by product generating silicon and silicon-dioxide stays in board cavity, affect board performance, thus to avoid in board cavity residue on the impact of atomic layer deposition process.
Accompanying drawing explanation
Fig. 1 is the schema of the purifying method of ALD board cavity of the present invention.
Embodiment
Be described in more detail below in conjunction with the purifying method of schematic diagram to ALD board cavity of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
Core concept of the present invention is, in ALD board cavity, ald is carried out to wafer, after wafer completes atom layer deposition process, step-down intensification is carried out to board cavity, pass into hydrogen and oxygen in board cavity simultaneously, make to carry out the sufficient disilicone hexachloride of unreacted in atomic layer deposition process under low pressure fully to react with hydrogen and oxygen, resultant of reaction brings to outside board cavity with air-flow under relatively low pressure.Thus disilicone hexachloride can not decline at brilliant boat or react with the steam in the air entered the residue forming silicon and silicon oxide at board housing surface in uphill process, affects the performance of board.
The schema of the purifying method of the ALD board cavity hereafter in composition graphs 1 is specifically described embodiments of the present invention.
Perform step S1, wafer is provided, wafer is placed in ALD board cavity, in described board cavity, pass into disilicone hexachloride, described crystal column surface carries out atom layer deposition process.In PDALD process, the temperature in board cavity rises to 500 DEG C-600 DEG C, is preferably 600 DEG C, makes disilicone hexachloride decomposes, and be conducive under high temperature increasing molecular activity, be beneficial to the carrying out of reaction, make sufficient reacting, the process of crystal column surface film forming is faster.Disilicone hexachloride decomposes forms silicon and tetrachloro silicane (SiCl
4), its reaction formula is:
2Si
2Cl
6--->Si+3SiCl
4
Siliciumatom is deposited on the surface of wafer, then oxidized formation silicon oxide.Along with reaction is constantly carried out, after PDALD technique completes, form the membranous layer of silicon oxide of predefine thickness at crystal column surface.Afterwards, the pressure of cavity is raised to normal pressure (7.6 × 10
2torr), temperature drops to 450 DEG C, is taken out by wafer from cavity, carry out the operations such as recovery.After having reacted, in board cavity, also retain a small amount of disilicone hexachloride.
Perform step S2, step-down intensification is carried out to described board cavity, the temperature in described board cavity is upgraded to 600 DEG C-800 DEG C, be preferably 750 DEG C.After carrying out PDALD process and completing, the pressure of board cavity is for being upgraded to normal pressure (7.6 × 10
2torr), in the process of step-down, the pressure in described board cavity is reduced to 1.0Torr-3.0Torr, be preferably 1.5Torr.Intensification can make the molecular activity of disilicone hexachloride better, be beneficial to the carrying out of reaction, relatively low pressure is conducive to disilicone hexachloride to bring to board cavity outside with become biology or other the residue of oxygen reaction with air-flow with hydrogen, avoid the material generated to be attached to the surface of board cavity, realize the purification to board cavity.
Perform step S3, first in board cavity, pass into oxygen, the time passing into oxygen is 15s ~ 30s, makes to be filled with a certain amount of oxygen in board cavity, prevents from follow-uply blasting in board cavity when passing into hydrogen.Then, in described board cavity, pass into hydrogen and oxygen, the disilicone hexachloride in the hydrogen passed into and oxygen and board cavity reacts, and reaction process is simultaneously:
2Si
2Cl
6+6H
2+3O
2--->12HCL+Si+3SiO
2
Thus, make to carry out the sufficient disilicone hexachloride of unreacted and hydrogen and oxygen in PDALD process fully to react, and, under relatively low pressure, resultant of reaction brings to outside board cavity with air-flow, avoid disilicone hexachloride decline at brilliant boat or react with the steam entering into the air in board cavity the residue forming silicon and silicon oxide at housing surface in uphill process, affect the performance of board cavity.
In the present embodiment, the time simultaneously passing into hydrogen and oxygen is 60min-100min, makes the reaction of disilicone hexachloride more abundant.Afterwards, first stop passing into hydrogen to board cavity, only in board cavity, pass into oxygen, the time passing into oxygen is 15s ~ 30s, last stopping again passing into oxygen, makes there is a certain amount of oxygen all the time in board cavity, prevents from passing into hydrogen and the blast that causes board cavity.
It should be noted that, the flow of the hydrogen passed into is 2slm-4slm, and be preferably 3slm, the flow of the oxygen passed into is 3slm-5slm, is preferably 4slm, the disilicone hexachloride under this ratio and hydrogen, oxygen reaction more abundant.
In existing technology, in the performance of an interior board of maintenance intervals (month), large and small particulate exceeding standard rate is respectively 13.9%, 4.1%.And through purifying method of the present invention, in the performance of an interior board of maintenance intervals (month), large and small particulate exceeding standard rate is respectively 5.3%, 0.8%.This shows, through purifying method of the present invention, the residues such as the size particles in board can be greatly reduced, improve the performance of board, save the manpower and materials in board maintenance, thus improve production efficiency.
Be understandable that, in the present invention, in the process of carrying out PDALD technique, in advance programming is carried out to the operating process of board, make board can automatically perform sequence of operations according to the program preset, that is, after the PDALD technique of wafer completes, the formula of board Automatically invoked purification, that is: heat up to board, step-down, pass into oxygen, pass into hydrogen and oxygen, stopping simultaneously and pass into hydrogen, stop passing into oxygen and passing into the operations such as nitrogen.Adopt the mode of board automatic program execution, be conducive to using manpower and material resources sparingly, and, can, after PDALD technique completes, make board carry out purification formula immediately, thus ensure the more thorough of board purification.
In sum, the purifying method of ALD board cavity of the present invention, comprising: provide wafer, passes into disilicone hexachloride, described wafer carries out atom layer deposition process in described board cavity; Step-down intensification is carried out to described board cavity; Pass into hydrogen and oxygen to described board cavity simultaneously.Pass into hydrogen and oxygen in board cavity simultaneously, the disilicone hexachloride making to carry out fully reaction in the process of atomic deposition with hydrogen and oxygen reaction, resultant of reaction brings to outside board cavity with air-flow under relatively low pressure, making disilicone hexachloride can not react with the steam in air the by product generating silicon and silicon-dioxide stays in board cavity, affect the performance of board, thus avoid residue on the impact of atomic layer deposition process.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (12)
1. a purifying method for ALD board cavity, is characterized in that, comprising:
Wafer is provided, in described board cavity, passes into disilicone hexachloride, described wafer carries out atom layer deposition process;
Step-down intensification is carried out to described board cavity;
Pass into hydrogen and oxygen to described board cavity simultaneously.
2. the purifying method of ALD board cavity as claimed in claim 1, is characterized in that, after carrying out step-down intensification, before passing into hydrogen and oxygen, pass into oxygen to described board cavity to described board cavity to described board cavity.
3. the purifying method of ALD board cavity as claimed in claim 1, is characterized in that, after described board cavity passes into hydrogen and oxygen simultaneously, first stops passing into hydrogen, then stops passing into oxygen.
4. the purifying method of ALD board cavity as claimed in claim 3, is characterized in that, after stopping passing into oxygen, in described board cavity, passes into nitrogen.
5. the purifying method of the ALD board cavity according to any one of claims 1 to 3, is characterized in that, when passing into hydrogen and oxygen to board cavity, the flow of the hydrogen passed into is 2slm-4slm simultaneously.
6. the purifying method of the ALD board cavity according to any one of claims 1 to 3, is characterized in that, when passing into hydrogen and oxygen to board cavity, the flow of the oxygen passed into is 3slm-5slm simultaneously.
7. the purifying method of the ALD board cavity according to any one of claims 1 to 3, is characterized in that, the time simultaneously passing into hydrogen and oxygen is 60min-100min.
8. the purifying method of ALD board cavity as claimed in claim 1, it is characterized in that, when carrying out ald to wafer, the temperature in described board cavity is 500 DEG C-600 DEG C.
9. the purifying method of ALD board cavity as claimed in claim 8, is characterized in that, the temperature in described board cavity is upgraded to 600 DEG C-800 DEG C.
10. the purifying method of ALD board cavity as claimed in claim 1, it is characterized in that, when carrying out ald to wafer, the pressure in described board cavity is 0,4Torr-0.6Torr.
The purifying method of 11. ALD board cavitys as claimed in claim 10, is characterized in that, the pressure in described board cavity is reduced to 1.0Torr-3.0Torr.
The purifying method of 12. ALD board cavitys as claimed in claim 1, is characterized in that, after described wafer completes atomic layer deposition process, board automatically performs intensification step-down and passes into the operation of hydrogen and oxygen simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510229506.4A CN104911562A (en) | 2015-05-07 | 2015-05-07 | Purification method of ALD machine cavity body |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510229506.4A CN104911562A (en) | 2015-05-07 | 2015-05-07 | Purification method of ALD machine cavity body |
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|---|---|
| CN104911562A true CN104911562A (en) | 2015-09-16 |
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ID=54080996
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|---|---|---|---|
| CN201510229506.4A Pending CN104911562A (en) | 2015-05-07 | 2015-05-07 | Purification method of ALD machine cavity body |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1705768A (en) * | 2002-10-17 | 2005-12-07 | 应用材料有限公司 | Apparatus and method for depositing an oxide film |
| CN1734726A (en) * | 2004-07-15 | 2006-02-15 | 东京毅力科创株式会社 | Method and apparatus for forming silicon oxide film |
| CN102024676A (en) * | 2010-05-25 | 2011-04-20 | 福建钧石能源有限公司 | Method for manufacturing semiconductor device in single-chamber reactor |
| CN102394222A (en) * | 2011-11-24 | 2012-03-28 | 上海宏力半导体制造有限公司 | Method for preventing solid particle formation on wafer surface |
-
2015
- 2015-05-07 CN CN201510229506.4A patent/CN104911562A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1705768A (en) * | 2002-10-17 | 2005-12-07 | 应用材料有限公司 | Apparatus and method for depositing an oxide film |
| CN1734726A (en) * | 2004-07-15 | 2006-02-15 | 东京毅力科创株式会社 | Method and apparatus for forming silicon oxide film |
| CN102024676A (en) * | 2010-05-25 | 2011-04-20 | 福建钧石能源有限公司 | Method for manufacturing semiconductor device in single-chamber reactor |
| CN102394222A (en) * | 2011-11-24 | 2012-03-28 | 上海宏力半导体制造有限公司 | Method for preventing solid particle formation on wafer surface |
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Application publication date: 20150916 |