CN104866848B - A kind of infrared imaging image identification system based on preposition enhanced processing - Google Patents

Abstract

The invention discloses an infrared imaging image recognition system based on pre-amplification processing, which is composed of an infrared imaging system (1) and an image recognition system (2) connected with the infrared imaging system (1); the infrared imaging System (1) is by infrared light source (11), the optical system (12) that is connected with infrared light source (11), the scanning mechanism (13) that is connected with optical system (12), is connected with scanning mechanism (13) Infrared detector (14), the image acquisition module (15) that is connected with infrared detector (14), forms with the preamplification circuit (16) that image acquisition module (15) is connected; The present invention passes preamplification circuit , the image signal can be amplified without distortion, and the amplified image is clearer, which further improves the recognition accuracy of the present invention.

Description

An Infrared Imaging Image Recognition System Based on Preamplification Processing

technical field

The invention relates to an image recognition system, in particular to an infrared imaging image recognition system based on pre-amplification processing.

Background technique

In order to identify the identity of the user, or to use the monitoring system in some occasions for security considerations is a common practice of current security. The traditional method is to set a password for the monitoring system, which is only known to specific personnel. However, if the password is leaked, other users can access the system, which also reduces security. Some human signs cannot be copied, so the biometric identification system that uses human signs, fingerprints or faces as the identity of the user is developing rapidly.

Among them, face recognition technology is a hot issue in the field of biometrics. Many research institutions and companies are actively conducting research and corresponding product development, and have developed a variety of face recognition algorithms. Using the face recognition algorithm for face recognition to make identity judgments has a very high accuracy rate, and many products can achieve a recognition rate of more than 90%. However, the current products of various algorithms cannot fully adapt to changes in lighting, that is to say, when the ambient lighting changes, the recognition rate will decrease. The international authoritative test (FRVT2002) shows that the change of illumination reduces the recognition rate from above 97% to about 50%. In order to solve the above problems, a new processing method has emerged, that is, to irradiate people or objects entering the monitoring area with visible light to increase their brightness. This method can neutralize part of the changes in external light. However, it cannot largely eliminate external influences, and at the same time, the addition of visible auxiliary light causes discomfort to users. Therefore, the existing products can only be used in occasions with fixed lighting environments such as internal passages and basements without natural light interference, resulting in limited application range. Therefore, it is urgent to provide an image recognition system capable of suppressing the influence of external natural light and having strong applicability.

Contents of the invention

The purpose of the present invention is to overcome the defect that the current traditional image recognition system cannot suppress the influence of external natural light and cause low recognition accuracy, and to provide an infrared imaging image recognition system based on pre-amplification processing.

The object of the present invention is achieved through the following technical solutions: a kind of infrared imaging image recognition system based on preamplification processing, which is composed of an infrared imaging system and an image recognition system connected with the infrared imaging system; the infrared imaging system consists of An infrared light source, an optical system connected to the infrared light source, a scanning mechanism connected to the optical system, an infrared detector connected to the scanning mechanism, and an image acquisition module connected to the infrared detector; and the image recognition The system is composed of a central processing module, an image processing system connected with the central processing module, a display, an alarm and a memory. In order to achieve the purpose of the present invention, the infrared imaging system is also provided with a preamplifier circuit connected to the image acquisition module.

Further, the pre-amplification circuit is composed of an amplifier chip U1, a transistor Q5, a field effect transistor MOS1, a resistor R17, a diode D3, a resistor R18, a resistor R15, a resistor R19, and the negative pole is connected to the IN of the amplifier chip U1 after passing through the resistor R17. The pins are connected, and the positive pole is used as the capacitor C14 at the input end of the preamplifier circuit. Capacitor C15, the positive pole is connected to the NF pin of the amplifier chip U1 after passing through the resistor R15, and the negative pole is connected to the source of the field effect transistor MOS1 through the resistor R19. One end of the capacitor C13 is connected to the NF pin of the amplifier chip U1 , the other end is connected to the GND pin of the amplifying chip U1 and a resistor R16 that is grounded at the same time, the positive pole is connected to the NSC pin of the amplifying chip U1, the negative pole is connected to the emitter of the triode Q5, and the N pole It is composed of a diode D4 connected to the emitter of the triode Q5, and the P pole is connected to the drain of the field effect transistor MOS1; the base of the triode Q5 is connected to the OUT pin of the amplifier chip U1, and its emitter is grounded. Its collector is connected to the ALC pin of the amplifier chip U1; the gate of the field effect transistor MOS1 is connected to the collector of the triode Q5; the emitter of the triode Q5 is also used as the preamplifier circuit output.

The image processing system is composed of a signal input circuit, a signal processing circuit connected to the signal input circuit, a trigger circuit and a tuning circuit connected to the signal processing circuit.

The signal input circuit is composed of triode Q1, resistor R2, resistor R1, one end is connected to the base of triode Q1, and the other end is connected to the emitter of triode Q1 through resistor R2 and resistor R1 in sequence. The positive electrode is connected to the emitter of the triode Q1, the negative electrode is grounded capacitor C1, and the positive electrode is connected to the collector of the triode Q1, and the negative electrode is connected to the signal processing circuit. The pole is connected to the signal processing circuit.

The signal processing circuit is composed of a processing chip U, a capacitor C3, a resistor R5, and a capacitor C5. The N pole is connected, the other end is connected to the GND pin of the processing chip U through the resistor R5, the resistance R4 is connected to the ground at the same time, the positive pole is connected to the CTRL pin of the processing chip U, and the negative pole is grounded. The CTRL pin of the chip U is connected, the other end is connected to the resistor R6 connected to the ground after the capacitor C5, the positive pole is connected to the SS pin of the processing chip U, the negative pole is connected to the capacitor C6 connected to the trigger circuit, and one end is connected to the processing chip U The PGOOD pin of the processing chip U is connected to the resistor R7, and the other end is connected to the tuning circuit; the VIN pin of the processing chip U is connected to the emitter of the transistor Q1, and its FB pin is connected to the resistor R4 and the resistor R5. The connection points are connected, its CTRL pin is connected to the negative electrode of the capacitor C2, and its SHDN pin is connected to the trigger circuit.

The trigger circuit is composed of a trigger chip K, a transistor Q4, a capacitor C12, and a capacitor C11. One end is connected to the base of the transistor Q4, and the other end is connected to the OUT pin of the trigger chip K. A resistor R12, and one end is connected to the transistor Q4. The emitter is connected to the resistor R14, the other end is connected to the GND pin of the trigger chip K after the capacitor C12, and one end is connected to the LX pin of the trigger chip K, and the other end is connected to the trigger chip after the capacitor C11 Composed of a resistor R13 connected to the FB pin of K; the IN pin of the trigger chip K is connected to the SHDN pin of the processing chip U, its EN pin is connected to the negative pole of the capacitor C6, and its GND pin is grounded ; The collector of the triode Q4 is connected with the tuning circuit.

Described tuning circuit is made up of triode Q2, triode Q3, inductance L1, resistance R8, electric capacity C8, resistance R9, resistance R7, and N pole is connected with the collector of triode Q2 after inductance L1 and resistance R8 successively, P pole then The varactor diode D2 connected to the emitter of the transistor Q3 after passing through the capacitor C8, one end is connected to the P pole of the varactor diode D2, and the other end is connected to the resistor R11 with a voltage of -15V, and the positive pole is connected to the P pole of the varactor diode D2. The capacitor C9, whose negative pole is connected to the collector of the transistor Q4, is connected to the emitter of the transistor Q3, and the adjustable capacitor C10, whose negative pole is grounded. One end is connected to the emitter of the transistor Q2, and the other end is connected to the Resistor R9 is followed by +15V inductor L2, the positive pole is connected to the connection point of inductor L2 and resistor R9, the negative pole is grounded capacitor C7, and one end is connected to the positive pole of capacitor C7, and the other end is connected to the base of transistor Q3 connected resistor R10; the base of the triode Q2 is connected to the PGOOD pin of the processing chip U through the resistor R7, and the collector of the triode Q3 is grounded.

In order to ensure the effect, the processing chip U is preferably an LT1942 integrated circuit, the trigger chip K is preferably an EMD2050 integrated circuit, and the amplifier chip U1 is preferably implemented by an MC2830 integrated circuit.

Compared with the prior art, the present invention has the following advantages and beneficial effects:

(1) The present invention can suppress a large amount of visible components in natural light, and is suitable for use in changing environments such as night, day, side, reverse, and front light, and greatly improves the application occasions of the present invention.

(2) The present invention uses the principle of infrared imaging to capture the target, so it is not easily disturbed by external factors, and the acquired information is rich, which greatly improves the accuracy of the image recognition system.

(3) The imaging distance of the present invention is farther than the traditional image acquisition device. When the present invention is applied to the access control system, the recognized object does not need to bring the face very close to the face image acquisition, so that the recognition The process is cleaner and more hygienic.

(4) The recognition speed of the present invention is fast, which meets the needs of people's fast-paced life at present.

(5) The present invention is provided with a pre-amplification circuit, which can amplify the image signal without distortion, and the amplified image is clearer, which further improves the recognition accuracy of the present invention.

Description of drawings

Figure 1 is a schematic diagram of the overall structure of the present invention.

FIG. 2 is a schematic diagram of the circuit structure of the image processing system of the present invention.

Fig. 3 is a schematic structural diagram of the preamplifier circuit of the present invention.

Detailed ways

The present invention will be further described in detail below in conjunction with examples, but the embodiments of the present invention are not limited thereto.

Example

As shown in FIG. 1 , the present invention consists of an infrared imaging system 1 and an image recognition system 2 connected with the infrared imaging system 1 . This infrared imaging system 1 is used for collecting the image signal of the object to be identified. It consists of an infrared light source 11, an optical system 12 connected with the infrared light source 11, a scanning mechanism 13 connected with the optical system 12, and a scanning mechanism 13. The infrared detector 14 connected, the image acquisition module 15 connected with the infrared detector 14, and the preamplification circuit 16 connected with the image acquisition module 15 are composed.

Wherein, the infrared light source 11 is used to emit near-infrared light, which is a narrow beam, which can make the identified target stand out in the field of view, making it form a large contrast with the background, thereby obtaining a relatively clear image. This makes the present invention applicable to the nighttime environment. When the infrared light irradiates the identified target, the identified target will reflect the infrared light, and the infrared light will be optically filtered by the optical system 12 . The scanning mechanism 13 collects the optically filtered infrared light and sends it to the infrared detector 14 . The infrared detector 14 is used to convert the infrared radiation signal into an electrical signal output, and the image acquisition module 15 is used to convert the invisible signal into a corresponding digital image. The pre-amplification circuit 16 is used to amplify the digital image without distortion and send it to the image recognition system 2 .

The infrared light source 1 is realized by using an existing infrared light-emitting diode, and the infrared detector 14 is preferably realized by using the WS-600HW infrared detector produced by Guangzhou Ailifu Electronic Technology Co., Ltd. The working temperature range is -10℃～+50℃, and the detection distance is long. However, the optical system 12, the scanning mechanism 13 and the image acquisition module 15 can all be realized by using existing technologies.

The image recognition system 2 is used to recognize the images collected by the infrared imaging system 1 . It consists of a central processing module 21 , an image processing system 22 connected to the central processing module 21 , a display 23 , an alarm 24 and a memory 25 .

Wherein, the central processing module 21 is used as the control center of the image recognition system 2, which is realized by using an existing single-chip microcomputer. The display 23 is used to display the image of the recognized object, and the memory 25 is used to store the image of the detected object in advance. When the image recognition system 2 receives the real-time image of the measured object, the memory 25 will compare the image with the image of the measured object stored in advance, if the comparison is unsuccessful, the memory 25 will send a signal to the central processing module 21 , allow it to start the alarm 24 to report to the police. The image processing system 22 is used to process the data image to make the image clearer.

As shown in FIG. 2 , the image processing system 22 is composed of a signal input circuit, a signal processing circuit connected to the signal input circuit, a trigger circuit and a tuning circuit connected to the signal processing circuit.

Among them, the signal input circuit consists of the triode Q1, one end is connected to the base of the triode Q1, the other end is connected to the emitter of the triode Q1 through the resistor R2 and the resistor R1 in sequence, and the positive electrode is connected to the emitter of the triode Q1. The capacitor C1 is connected to each other and the negative pole is grounded, and the capacitor C2 is connected to the collector of the triode Q1 and the negative pole is connected to the signal processing circuit and grounded at the same time. The emitter of the triode Q1 is connected with the signal processing circuit.

The signal processing circuit is composed of a processing chip U, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6 and a diode D1.

When connected, the P pole of the diode D1 is connected to the SW1 pin of the processing chip U, and its N pole is grounded after passing through the capacitor C3. One end of the resistor R4 is connected to the N pole of the diode D1, and the other end is connected through the resistor R5. Afterwards, it is connected to the GND pin of the processing chip U while being grounded, the positive pole of the capacitor C4 is connected to the CTRL pin of the processing chip U, and its negative pole is grounded, and one end of the resistor R6 is connected to the CTRL pin of the processing chip U, and the other end is connected to the CTRL pin of the processing chip U. The other end is grounded after the capacitor C5, the positive pole of the capacitor C6 is connected to the SS pin of the processing chip U, the negative pole is connected to the trigger circuit, one end of the resistor R7 is connected to the PGOOD pin of the processing chip U, and the other end is connected to the PGOOD pin of the processing chip U. One end is connected with the tuning circuit.

At the same time, the VIN pin of the processing chip U is connected to the emitter of the transistor Q1, its FB pin is connected to the connection point of the resistor R4 and the resistor R5, and its CTRL pin is connected to the negative pole of the capacitor C2. Its SHDN pin is connected with the trigger circuit. In order to ensure the implementation effect, the processing chip U is preferably realized by LT1942 integrated circuit.

The trigger circuit is composed of a trigger chip K, a transistor Q4, a resistor R12, a resistor R13, a resistor R14, a capacitor C11 and a capacitor C12. When connected, one end of the resistor R12 is connected to the base of the transistor Q4, the other end is connected to the OUT pin of the trigger chip K, one end of the resistor R14 is connected to the emitter of the transistor Q4, and the other end is connected to the The capacitor C12 is connected to the GND pin of the trigger chip K, one end of the resistor R13 is connected to the LX pin of the trigger chip K, and the other end of the resistor R13 is connected to the FB pin of the trigger chip K through the capacitor C11. The IN pin of the trigger chip K is connected to the SHDN pin of the processing chip U, its EN pin is connected to the negative pole of the capacitor C6, and its GND pin is grounded; the collector of the triode Q4 is connected to the tuning circuit connected. In order to better implement the present invention, the trigger chip K is preferably realized by an EMD2050 integrated circuit.

The tuned circuit can make the image more stable, which is beneficial to the image recognition of the present invention. It consists of triode Q2, triode Q3, and the N pole is connected with the collector of the triode Q2 through the inductance L1 and the resistor R8 in sequence, and the P pole is connected with the collector of the triode Q2 through the capacitor C8. The variable capacitance diode D2 connected with the emitter of the triode Q3, one end is connected with the P pole of the variable capacitance diode D2, and the other end is connected with a resistor R11 of -15V voltage, and the positive pole is connected with the P pole of the variable capacitance diode D2. The negative pole is the capacitor C9 connected to the collector of the triode Q4, the positive pole is connected to the emitter of the triode Q3, and the negative pole is the adjustable capacitor C10 connected to the ground, one end is connected to the emitter of the triode Q2, and the other end is connected through the resistor R9 Connect the inductor L2 with +15V voltage, the positive pole is connected to the junction of the inductor L2 and the resistor R9, the negative pole is connected to the capacitor C7, and one end is connected to the positive pole of the capacitor C7, and the other end is connected to the base of the transistor Q3. R10 composition. The base of the transistor Q2 is connected to the PGOOD pin of the processing chip U through the resistor R7, and the collector of the transistor Q3 is grounded.

Preamplifier circuit 16 is the key point of the present invention, as shown in Figure 3, it is made up of amplifier chip U1, triode Q5, field effect transistor MOS1, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, electric capacity C13 , capacitor C14, capacitor C15, capacitor C16, diode D3 and diode D4.

When connected, the negative pole of the capacitor C14 is connected to the IN pin of the amplifier chip U1 through the resistor R17, and its positive pole is used as the input terminal of the preamplifier circuit 16. The positive pole of the capacitor C15 is connected to the negative pole of the capacitor C14, and its negative pole Then it is connected to the VCC pin of the amplifier chip U1 through the diode D3 and the resistor R18 in turn, the positive pole of the capacitor C13 is connected to the NF pin of the amplifier chip U1 after the resistor R15, and its negative pole is connected to the field effect pin after the resistor R19. The source of the tube MOS1 is connected, one end of the resistor R16 is connected to the NF pin of the amplifier chip U1, and the other end is connected to the GND pin of the amplifier chip U1 and grounded at the same time, the positive pole of the capacitor C16 is connected to the pin of the amplifier chip U1 The NSC pin is connected, its cathode is connected to the emitter of the transistor Q5, the N pole of the diode D4 is connected to the emitter of the transistor Q5, and its P pole is connected to the drain of the field effect transistor MOS1.

The base of the transistor Q5 is connected to the OUT pin of the amplifier chip U1 , its emitter is grounded, and its collector is connected to the ALC pin of the amplifier chip U1 . The gate of the field effect transistor MOS1 is connected to the collector of the transistor Q5. The emitter of the transistor Q5 is also used as the output terminal of the preamplifier circuit 16 .

When the image signal is sent in, it is amplified by the amplifier composed of the amplifier chip U1, the resistor R17 and the resistor R16, and the amplified image signal is processed by the signal frequency locking circuit composed of the transistor Q5, the diode D4 and the MOS1, so that the front The image signal output by the amplifier circuit is clearer. The capacitor C13 and the capacitor C14 can suppress the fluctuating voltage and prevent the fluctuating voltage from affecting the image signal. In order to achieve a better implementation effect, the amplifier chip U1 is preferably realized by an MC2830 integrated circuit.

As described above, the present invention can be well realized.

Claims (8)

1. a kind of infrared imaging image identification system based on preposition enhanced processing, by infrared imaging system (1), with it is infrared into Image identification system (2) composition being connected as system (1)；The infrared imaging system (1) is and red by infrared light supply (11) The optical system (12) that outer light source (11) is connected, the sweep mechanism (13) being connected with optical system (12), with sweep mechanism (13) infrared detector (14) being connected and the image capture module (15) being connected with infrared detector (14) composition； And the image identification system (2) is then by central processing module (21), at the image being connected with central processing module (21) Reason system (22), display (23), alarm (24) and memory (25) composition；It is characterized in that：The infrared imaging System (1) further includes the pre-amplification circuit (16) being connected with image capture module (15)；The pre-amplification circuit (16) then by amplification chip U1, triode Q5, field-effect tube MOS1, resistance R17, diode D3, resistance R18, resistance R15, electricity R19 is hindered, cathode is connected after resistance R17 with the IN pins of amplification chip U1, anode is then used as the pre-amplification circuit (16) Input terminal capacitance C14, anode is connected with the cathode of capacitance C14, cathode then sequentially after diode D3 and resistance R18 with The capacitance C15 that the VCC pins of amplification chip U1 are connected, anode is connected after resistance R15 with the NF pins of amplification chip U1, The capacitance C13 that cathode is then connected after resistance R19 with the source electrode of field-effect tube MOS1, one end and the NF pins of amplification chip U1 The resistance R16 for being connected, being grounded while the other end is then connected with the GND pins of amplification chip U1, anode and amplification chip The capacitance C16 and N poles that the NSC pins of U1 are connected, cathode is then connected with the emitter of triode Q5 are with triode Q5's The diode D4 compositions that emitter is connected, P poles are then connected with the drain electrode of field-effect tube MOS1；The base stage of the triode Q5 It is connected with the OUT pins of amplification chip U1, its emitter is grounded, its collector is then connected with the ALC pins of amplification chip U1 It connects；Collector of the grid of the field-effect tube MOS1 then with triode Q5 is connected；The emitter of the triode Q5 is also made Output terminal for the pre-amplification circuit (16).

2. a kind of infrared imaging image identification system based on preposition enhanced processing according to claim 1, feature exist In：The image processing system (22) is then by signal input circuit, the signal processing circuit being connected with signal input circuit, And trigger circuit and the tuning circuit composition being connected with signal processing circuit；The signal input circuit is by triode Q1, resistance R2, resistance R1, one end is connected with the base stage of triode Q1, the other end then sequentially after resistance R2 and resistance R1 with The resistance R3 that the emitter of triode Q1 is connected, anode is connected with the emitter of triode Q1, the capacitance C1 of cathode ground connection, And the capacitance C2 being grounded while anode is connected with the collector of triode Q1, cathode is then connected with signal processing circuit Composition；The emitter of the triode Q1 is connected with signal processing circuit.

3. a kind of infrared imaging image identification system based on preposition enhanced processing according to claim 2, feature exist In：The signal processing circuit is by processing chip U, capacitance C3, resistance R5, capacitance C5, P pole and the SW1 pins of processing chip U It is connected, the diode D1 that N poles are then grounded after capacitance C3, one end is connected with the N poles of diode D1, the other end is then through resistance The resistance R4 being grounded while being connected after R5 with the GND pins of processing chip U, the CTRL pin phases of anode and processing chip U Connection, the capacitance C4 of cathode ground connection, one end is connected with the CTRL pins of processing chip U, the other end is then grounded after capacitance C5 Resistance R6, the capacitance C6, Yi Jiyi that anode is connected with the SS pins of processing chip U, cathode is then connected with trigger circuit The resistance R7 compositions that end is connected with the PGOOD pins of processing chip U, the other end is then connected with tuning circuit；The processing The VIN pins of chip U are connected with the emitter of triode Q1, its tie point of FB pins then with resistance R4 and resistance R5 is connected It connects, its CTRL pin is then connected with the cathode of capacitance C2, its SHDN pin is then connected with trigger circuit.

4. a kind of infrared imaging image identification system based on preposition enhanced processing according to claim 3, feature exist In：The trigger circuit is by flip chip K, triode Q4, capacitance C12, capacitance C11, one end and the base stage phase of triode Q4 The resistance R12 that connection, the other end are then connected with the OUT pins of flip chip K, one end is connected with the emitter of triode Q4 It connects, the resistance R14 that the other end is then connected after capacitance C12 with the GND pins of flip chip K and one end and flip chip K LX pins be connected, resistance R13 that the other end is then connected after capacitance C11 with the FB pins of flip chip K composition；It is described The IN pins of flip chip K are connected with the SHDN pins of processing chip U, its EN pin is then connected with the cathode of capacitance C6, Its GND pin is grounded；The collector of the triode Q4 is then connected with tuning circuit.

5. a kind of infrared imaging image identification system based on preposition enhanced processing according to claim 4, feature exist In：The tuning circuit is by triode Q2, triode Q3, inductance L1, and resistance R8, capacitance C8, resistance R9, resistance R7, N are extremely suitable It is secondary be connected after inductance L1 and resistance R8 with the collector of triode Q2, the then transmitting after capacitance C8 with triode Q3 of P poles The varactor D2 that pole is connected, one end is connected with the P poles of varactor D2, the other end then connects the resistance of -15V voltages R11, the capacitance C9 that anode is connected with the P poles of varactor D2, cathode is then connected with the collector of triode Q4, anode It is connected with the emitter of triode Q3, the tunable capacitor C10 that cathode is then grounded, one end is connected with the emitter of triode Q2 Connect, the other end is then followed by the inductance L2 of+15V voltages through resistance R9, anode is connected with the tie point of inductance L2 and resistance R9, bears The capacitance C7 and one end is connected with the anode of capacitance C7, the other end is then connected with the base stage of triode Q3 that pole is grounded Resistance R10 is formed；The base stage of the triode Q2 is connected after resistance R7 with the PGOOD pins of processing chip U, and triode The collector of Q3 is then grounded.

6. according to a kind of infrared imaging image identification system based on preposition enhanced processing of claim 3~5 any one of them, It is characterized in that：The processing chip U is LT1942 integrated circuits.

7. a kind of infrared imaging image identification system based on preposition enhanced processing according to claim 4 or 5, feature It is：The flip chip K is EMD2050 integrated circuits.

8. according to a kind of infrared imaging image identification system based on preposition enhanced processing of Claims 1 to 5 any one of them, It is characterized in that：The amplification chip U1 is MC2830 integrated circuits.