CN104835765A - Temperature-controllable heating plate with boss surface structure arranged in polygon shape - Google Patents

Abstract

A temperature-controllable heating plate with polygonal distributed boss surface structure comprises a heating plate with a central air inlet. The outer circle of the heating plate is provided with gas recovery holes and N bosses are arranged on the surface, and the N bosses form a polygonal structure. The polygonal structure is a regular boss structure such as pentagon, hexagon or octagon. Working principle: The heat conduction medium enters the surface of the heating plate from the air inlet hole in the center of the heating plate, and forms a flow space for the heat conducting medium in the gap between the boss and the boss. The interior returns to the heat transfer medium cooling device, where cooling is achieved. The cooled gas will flow in from the center of the heating plate again to realize the circulation flow of the heat transfer medium. The invention uses a rationally designed gas distribution structure, so that the heat conduction medium can be directly, quickly and evenly distributed between the heating plate and the wafer, so as to realize rapid and accurate control of the wafer temperature.

Description

A temperature-controllable heating plate with polygonal distribution of boss surface structure

technical field

The invention relates to a disk surface structure of a temperature-controllable heating disk applied to semiconductor deposition equipment. The gas distribution form on the surface of the polygonal boss disk is used to achieve precise control of the wafer temperature. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture.

Background technique

Semiconductor equipment often needs to preheat the wafer and chamber space or maintain the temperature required for the deposition reaction during the deposition reaction. Most semiconductor deposition equipment uses heating plates or electrostatic chucks to achieve the purpose of preheating the wafer. However, because the deposition reaction is mostly carried out under vacuum conditions, the vacuum environment has poor thermal conductivity due to the lack of heat-conducting media. It is often not possible to preheat the wafer to the required temperature quickly, or to preheat the wafer uniformly before the deposition reaction. In semiconductor coating equipment with radio frequency participation, when the energy excited by radio frequency reaches the wafer surface, the temperature of the wafer surface will often rise rapidly due to the lack of heat conduction medium, making the wafer surface temperature exceed the deposition requirement. temperature, causing damage to the wafer. As the size of the wafer gradually increases, the temperature uniformity of the wafer itself directly determines whether the quality of the wafer is good or bad. Fast and accurate temperature control is crucial to the improvement of production efficiency and product yield. of.

Most of the existing semiconductor deposition equipment heating plates and electrostatic chucks only have the temperature adjustment and temperature control functions of the heating plate itself, and cannot achieve precise control of the temperature of the wafer. However, the most urgent need of the deposition reaction is indeed fast and accurate control of the wafer temperature. Only by maintaining the temperature of the wafer quickly and accurately within the temperature range required for the deposition reaction can the product yield and efficiency be improved.

Contents of the invention

The purpose of the present invention is to solve the above problems, and mainly solve the problem that the existing heating plate and electrostatic chuck cannot quickly and accurately control the temperature of the wafer. In the present invention, a certain air gap is formed between the surface of the heating plate and the wafer through the polygonal boss structure on the surface of the heating plate, and a heat-conducting gas with a good heat conduction effect is introduced into it as a heat transfer medium to quickly transfer the temperature of the heating plate to Wafer, or the temperature of the wafer is quickly transferred to the heating plate and exported. Through the reasonable design of the plate surface structure, the heat-conducting medium can quickly and evenly flow in the gap, and the heat exchange between the heating plate and the wafer can be realized in time.

In order to achieve the above object, the present invention adopts the following technical solution: a temperature-controllable heating plate with polygonal distribution of boss surface structure. A polygonal distribution of bosses is designed on the surface of the heating plate, and the middle is used as an inlet for gas introduction. The table gap is transported from the middle to the edge area of the heating plate. Because the heat transfer medium will reduce the flow rate due to pressure loss during the flow process, the boss structure on the surface of the heating plate is based on the law of medium pressure loss. The size of the boss from the middle to the edge Gradually decrease, so that the medium flow space from the middle to the edge gradually increases, so that the heat taken away by the center and the edge is the same, and the temperature of the wafer can be precisely controlled. The gas will eventually return from the inside of the heating plate to the heat transfer medium cooling device in the small holes in the outer circle of the heating plate, where it will be cooled to remove excess heat. The cooled gas will flow in from the center of the heating plate again to realize the circulation flow of the heat transfer medium.

Beneficial effects and characteristics of the present invention:

A certain air gap space is formed between the heating plate and the wafer through a polygonal distributed surface boss structure, and a heat conduction medium with a high thermal conductivity is introduced into the air gap space to enhance the vacuum environment. heat transfer efficiency. Through the rational design of the surface gas distribution structure, the heat transfer medium can be directly, quickly and evenly distributed between the heating plate and the wafer, and the size of each area or the size of the boss is determined according to the pressure and flow rate changes caused by the flow of the medium , to adjust the heat taken away by the heat-conducting medium, so as to realize rapid and accurate control of the wafer temperature. Further improve the yield of wafers and the production efficiency of semiconductor deposition equipment.

Description of drawings

Fig. 1 is a structural schematic diagram of the present invention.

The part numbers in the figure respectively represent:

1. Central air inlet; 2. Boss; 3. Gas recovery hole; 4. Heating plate.

The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

Detailed ways

Example

As shown in FIG. 1 , a temperature-controllable heating plate with polygonal distribution of boss surface structure includes a heating plate 4 with a central air inlet 1 . The outer circumference of the heating plate 4 is provided with a gas recovery hole 3 and N bosses 2 are arranged on the surface, and the N bosses 2 form a polygonal structure.

The polygonal structure is a regular boss structure such as pentagon, hexagon or octagon;

There is a gap between the boss 2 and the boss 2;

The size of the boss 2 on the surface of the heating plate 4 gradually decreases from the middle to the edge.

Working principle: The heat conduction medium enters the surface of the heating plate from the central air inlet 1 of the heating plate 4, and a certain space in the center is used to release the pressure when the gas enters. The surface of the heating plate 4 has bosses 2 regularly distributed in a polygonal shape. The gap between the bosses 2 and the bosses 2 forms a flow space for the heat transfer medium, and the heat transfer medium is transported from the middle to the edge area of the heating plate through the gap between the bosses 2. During the flow process, the flow rate will be reduced due to pressure loss, so the boss 2 on the surface of the heating plate 4 will gradually decrease in size from the middle to the edge of the boss 2 according to the law of medium pressure loss, so that the medium flow space from the middle to the edge Increase gradually to achieve the same amount of heat taken away by the center and the edge, and achieve precise control of the wafer temperature. The gas will eventually return to the heat transfer medium cooling device from the inside of the heating plate 4 in the gas recovery hole 3 on the outer circle of the heating plate, and be cooled therein so as to take away excess heat. The cooled gas will flow in from the center of the heating plate again to realize the circulation flow of the heat transfer medium.

The stagnation area of the outer circle of the above-mentioned heating plate can be designed to be open, so that the heat-conducting medium can directly diffuse into the chamber space without collecting the medium for re-circulation.

Claims (4)

1. a controllable temperature heating plate for the boss surface structure of polygon distribution, it is characterized in that: it comprises the heating plate being provided with air feeding in center hole, the cylindrical of above-mentioned heating plate is provided with gas recovery holes and surface is provided with N number of boss, and N number of boss forms polygonized structure.

2. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: boss forms polygonized structure, and this structure is the boss structure of pentagon or the rule such as hexagon or octagon.

3. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: described boss and boss have gap.

4. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: the size of described heating plate surface boss diminishes from centre gradually to edge.