CN104810452A - Light emitting element - Google Patents

Abstract

The invention provides a light-emitting element, which comprises a first electrode, a conductive substrate, a metal reflecting layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, a three-dimensional wood-pile-shaped photonic crystal and a second electrode which are sequentially stacked. The three-dimensional wood stack-shaped photonic crystal has a photonic energy gap and can limit the propagation direction of light, the light can be propagated only in the vertical direction through design so as to avoid the loss of light rays in the horizontal direction and improve the luminous efficiency of the light, in addition, a fluorescent layer can be added, nano fluorescent powder or quantum dot fluorescent material in the fluorescent layer is filled in the gap of the three-dimensional wood stack-shaped photonic crystal, the luminous spectrum is adjusted through the three-dimensional wood stack-shaped photonic crystal, and the light-emitting element with high luminous efficiency and adjustable color temperature can be obtained, so that the color rendering property of the light-emitting element is improved.

Description

Light emitting element

technical field

The invention relates to a light-emitting element, especially a composite structure light-emitting element in which three-dimensional woodpile photonic crystals are fabricated on the N-type semiconductor layer of a vertical blue light-emitting diode. the

Background technique

Generally speaking, light-emitting diodes (Light-Emitting Diode, LED) have the characteristics of power saving, thinness and shortness, and are mainly used in indicator lighting, decorative lighting, and mobile phone backlight applications. Traditional automotive lighting, architectural lighting and some indoor lighting are gradually replacing existing incandescent and fluorescent lamps. However, the luminous efficiency of blue light diodes in the industry is currently low, and the best luminous efficiency of white light diodes to become a lighting source is above 150lm/W. However, the luminous efficiency of white light diodes from domestic and foreign manufacturers is generally only 100lm/W, which is obviously insufficient. Conventional light-emitting diodes use reflection or refraction to concentrate the emitted light, but the light generated by the light-emitting layer can only be fully reflected inside the element, and cannot effectively emit light, so most of the light waves are confined inside the light-emitting diode until it is The material in the light-emitting diode is completely absorbed, so that the efficiency of light extraction is not good, resulting in the problem of reduced luminous efficiency. the

Contents of the invention

Therefore, in order to solve the problem of poor light-extracting efficiency of conventional light-emitting diodes, resulting in a decrease in luminous efficiency, the present invention proposes a light-emitting element that uses a vertical blue light-emitting diode crystal grain as a substrate, and the N-type crystal grain of the blue light-emitting diode Three-dimensional woodpile-like photonic crystals are fabricated on the semiconductor layer to form a composite light-emitting element, which can not only avoid luminous loss and improve luminous efficiency, but also add a fluorescent layer or a fluorescent substance, and use three-dimensional woodpile-like photonic crystals to adjust the color temperature. Improve the color rendering of light-emitting elements. the

A light-emitting element of the present invention includes a first electrode; a conductive substrate configured on the first electrode; a metal reflective layer configured on the conductive substrate; a P-type semiconductor layer configured on the metal reflective layer a light-emitting layer configured on the P-type semiconductor layer; an N-type semiconductor layer configured on the light-emitting layer; a three-dimensional wood pile photonic crystal fabricated on the N-type semiconductor layer, and a second electrode, The light-emitting element is arranged on the three-dimensional woodpile photonic crystal to form a complex structure. And the light-emitting element can further include a fluorescent layer, and the fluorescent layer is disposed on the three-dimensional woodpile-shaped photonic crystal. the

The material of the conductive substrate can be silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated multilayer metal. The material of the metal reflective layer may be platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals and alloys. The material of the P-type semiconductor layer may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The material of the N-type semiconductor layer may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The material of the light-emitting layer can be indium gallium nitride (InGaN) and gallium nitride (GaN), aluminum gallium nitride and gallium nitride (AlGaN/GaN), aluminum gallium arsenide and gallium arsenide (AlGaAs/GaAs) Multilayer quantum wells or silicon carbide (SiC). The material of the fluorescent layer can be nano organic luminescent material, nano inorganic luminescent material, fluorescent dye, fluorescent dye, nano fluorescent powder or quantum dot fluorescent material. the

The material of the three-dimensional woodpile photonic crystal can be selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or a combination thereof. The semiconductor material can be gallium nitride, indium gallium nitride, indium gallium nitride, aluminum gallium nitride, aluminum gallium arsenide, gallium arsenide or a combination thereof; the organic polymer can be polystyrene series, polymethyl Methyl acrylate series, polymaleic acid series, polylactic acid series, polyamino acid series polymers or combinations thereof; the inorganic compound can be Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO ₂ , SnO ₂ , TiO ₂ , ZrO 2 , HfO ₂ , ThO ₂ , CeO ₂ , CoO ₂ , MnO ₂ , IrO ₂ , VO ₂ , WO ₃ , MoO ₃ , Al _{2 O 3 ,} Y ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O ₃ , B ₂ O ₃ , Cr ₂ O ₃ , Fe ₂ O ₃ , Fe ₃ O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe _2. WTe ₂ , Cu ₂ S, Cu ₂ Se, Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or combinations thereof; the metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti , Zr, V, Nb, Mo, W, Mn or combinations thereof. In the three-dimensional woodpile photonic crystal 70, the column height h of each layer is 100nm-10μm, the column width w is 100nm-10μm, the column spacing a is 100nm-10μm, and in the vertical direction, at least every two layers is a combination period c , its value is 100nm～10μm.

The present invention also provides a light-emitting element, comprising a first electrode; a conductive substrate disposed on the first electrode; a metal reflective layer disposed on the conductive substrate; a P-type semiconductor layer disposed on the metal reflective layer. layer; a light-emitting layer configured on the P-type semiconductor layer; an N-type semiconductor layer configured on the light-emitting layer; a three-dimensional wood-pile photonic crystal, the air gap of which is filled with a phosphor, the three-dimensional wood-pile The photonic crystal is made on the N-type semiconductor layer, and a second electrode is arranged on the three-dimensional wood pile photonic crystal. Wherein the material of the fluorescent substance can be nano organic luminescent material, nano inorganic luminescent material, fluorescent dye, fluorescent dye, nano fluorescent powder or quantum dot fluorescent material. the

Therefore, in the light-emitting element of the composite structure of the present invention, the three-dimensional wood-pile photonic crystal has a photonic energy gap, which can limit the propagation direction of light, and can only transmit light in the vertical direction through design, and avoid light in the horizontal direction. Loss, and then improve its luminous efficiency, you can get high luminous efficiency of the blue light-emitting element. In addition, the fluorescent layer can be further added to the light-emitting element of this composite structure, and the nano-organic light-emitting materials, nano-inorganic light-emitting materials, fluorescent dyes, fluorescent dyes, nano-fluorescent powders or quantum dot fluorescent materials in the fluorescent layer are filled The white light source package body of the light-emitting element is formed in the gap of the three-dimensional wood pile-shaped photonic crystal, or the fluorescent substance is filled in the gap of the three-dimensional wood pile-shaped photonic crystal of the light-emitting element in this composite structure, through the three-dimensional wood After the stacked photonic crystal modulates the white light emission spectrum, a white light emitting element with high luminous efficiency and adjustable color temperature can be obtained, thereby improving its color rendering. the

Description of drawings

Fig. 1 is a schematic structural diagram of the blue light emitting element of the present invention. the

Fig. 2 is a schematic diagram of the structure of a three-dimensional woodpile photonic crystal according to an embodiment of the present invention. the

Fig. 3(a) is a top view of a three-dimensional woodpile photonic crystal electron microscope according to another embodiment of the present invention. the

Fig. 3(b) is a side view of a three-dimensional woodpile photonic crystal electron microscope according to another embodiment of the present invention. the

FIG. 4 is a schematic structural diagram of a white light emitting element according to an embodiment of the present invention. the

Fig. 5 is a schematic structural diagram of a white light emitting element according to another embodiment of the present invention. the

Fig. 6 is a broken line diagram of the difference before and after using the three-dimensional woodpile photonic crystal in the white light emitting element of the present invention. the

Detailed ways

FIG. 1 is a schematic structural diagram of a blue light emitting element 1 of the present invention, and FIG. 2 is a schematic structural diagram of a three-dimensional woodpile photonic crystal 70 according to an embodiment of the present invention. The light-emitting element 1 of the present invention includes a first electrode 10; a conductive substrate 20 disposed on the first electrode 10; a metal reflective layer 30 disposed on the conductive substrate 20; a P-type semiconductor layer 40 configured 30 on the metal reflective layer; a light-emitting layer 50, configured on the P-type semiconductor layer 40; an N-type semiconductor layer 60, configured on the light-emitting layer 50; a three-dimensional wood pile photonic crystal 70, fabricated on the On the N-type semiconductor layer 60 ; a second electrode 80 is disposed on the three-dimensional wood pile photonic crystal 70 . the

The material of the conductive substrate 20 can be silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated multi-layer metal. The metal reflection layer 30 can be made of platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals. The material of the P-type semiconductor layer 40 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The material of the N-type semiconductor layer 60 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The light-emitting layer 50 can be made of indium gallium nitride/gallium nitride (InGaN/GaN), aluminum gallium nitride/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs). Multilayer quantum wells or silicon carbide (SiC). the

The material of the three-dimensional woodpile photonic crystal 70 can be selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or a combination thereof. The semiconductor material can be gallium nitride, indium gallium nitride, indium gallium nitride, aluminum gallium nitride, aluminum gallium arsenide, gallium arsenide or a combination thereof; the organic polymer can be polystyrene series, polymethyl Methyl acrylate series, polymaleic acid series, polylactic acid series, polyamino acid series polymers or combinations thereof; the inorganic compound can be Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO ₂ , SnO ₂ , TiO ₂ , ZrO 2 , HfO ₂ , ThO ₂ , CeO ₂ , CoO ₂ , MnO ₂ , IrO ₂ , VO ₂ , WO ₃ , MoO ₃ , Al _{2 O 3 ,} Y ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O ₃ , B ₂ O ₃ , Cr ₂ O ₃ , Fe ₂ O ₃ , Fe ₃ O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe _2. WTe ₂ , Cu ₂ S, Cu ₂ Se, Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or combinations thereof; the metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti , Zr, V, Nb, Mo, W, Mn or combinations thereof. As shown in Figure 2, in the present embodiment, the structure of the three-dimensional woodpile photonic crystal 70 has a column height of h, and its value is between 100nm and 10μm; a column width is w, and its value is between 100nm and 10μm; The spacing is a; its value is between 100nm and 10μm; and in the vertical direction, every four layers is a combination period c, and its value is between 100nm and 10μm, but it is not limited to every four layers, but can also be every two layers or Every three layers form a combination cycle c.

In the structure of the above-mentioned light-emitting element 1, the three-dimensional woodpile photonic crystal 70 can also be fabricated on a thin layer of gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors, and the formation of the The N-type semiconductor layer 60 , therefore, the second electrode 80 is formed and disposed on the N-type semiconductor layer 60 . the

Please refer to Fig. 3 (a) and Fig. 3 (b), Fig. 3 (a) is another embodiment of the present invention three-dimensional pile-like photonic crystal electron microscope top view; Fig. 3 (b) is another embodiment of the present invention Electron microscope side view of a 3D woodpile photonic crystal. It can be seen that the structure of the three-dimensional wood-pile photonic crystal 70 has a column width of w, a column height of h, a column spacing of a, and a combination period c in the vertical direction. In this embodiment, every second layer is A combination period c. the

In this embodiment, the vertical blue light-emitting diode crystal grain is used as the substrate, and the three-dimensional wood-pile photonic crystal 70 is fabricated on the N-type semiconductor layer 60 of the blue light-emitting diode grain to form the light-emitting element 1 with a composite structure. The woodpile photonic crystal 70 has a photonic energy gap, which can limit the direction of light propagation. It is designed to allow light to propagate only in the vertical direction to avoid the loss of light in the horizontal direction, thereby improving its luminous efficiency. Therefore, it solves the problem that light is limited to this The interior of the light-emitting element 1 can only be totally reflected inside the light-emitting element 1 , but the light cannot be effectively extracted, resulting in poor light extraction efficiency and lower luminous efficiency. the

Please refer to FIG. 2 and FIG. 4 . FIG. 4 is a schematic structural diagram of a white light emitting device according to an embodiment of the present invention. In this embodiment, a light-emitting element 1 includes a first electrode 10; a conductive substrate 20 disposed on the first electrode 10; a metal reflective layer 30 disposed on the conductive substrate 20; a P-type semiconductor layer 40, arranged on the metal reflective layer 30; a light-emitting layer 50, arranged on the P-type semiconductor layer 40; an N-type semiconductor layer 60, arranged on the light-emitting layer 50; a three-dimensional wood pile photonic crystal 70, Manufactured on the N-type semiconductor layer 60; a second electrode 80 is arranged on the three-dimensional wood-pile photonic crystal 70 to form the light-emitting element 1 with a composite structure, and is additionally arranged on the three-dimensional wood-pile photonic crystal 70 A fluorescent layer 90 is used to obtain the light-emitting element 1 of white light. the

The material of the conductive substrate 20 can be silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated multi-layer metal. The metal reflective layer 30 can be made of platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals and alloys. The material of the P-type semiconductor layer 40 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The material of the N-type semiconductor layer 60 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The light-emitting layer 50 can be made of indium gallium nitride/gallium nitride (InGaN/GaN), aluminum gallium nitride/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs). Multilayer quantum wells or silicon carbide (SiC). The material of the fluorescent layer 90 can be nano organic luminescent material, nano inorganic luminescent material, fluorescent dye, fluorescent dye, nano fluorescent powder or quantum dot fluorescent material. the

The material of the three-dimensional woodpile photonic crystal 70 can be selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or a combination thereof. The semiconductor material can be gallium nitride, indium gallium nitride, indium gallium nitride, aluminum gallium nitride, aluminum gallium arsenide, gallium arsenide or a combination thereof; the organic polymer can be polystyrene series, polymethacrylic acid Methyl ester series, polymaleic acid series, polylactic acid series, polyamino acid series polymers or combinations thereof; the inorganic compound can be Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO _2. SnO ₂ , TiO ₂ , ZrO 2 , HfO ₂ , ThO ₂ , CeO ₂ , CoO ₂ , MnO ₂ , IrO _{2 , VO 2 , WO 3 , MoO 3 , Al 2 O 3 , Y 2 O 3 , Yb 2} O ₃ , Dy ₂ O ₃ , B ₂ O ₃ , Cr ₂ O ₃ , Fe ₂ O ₃ , Fe ₃ O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe ₂ , WTe ₂ , Cu ₂ S, Cu ₂ Se, Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN , TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or combinations thereof; the metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or combinations thereof. In the three-dimensional woodpile photonic crystal 70, the column height h of each layer is 100nm-10μm, the column width w is 100nm-10μm, and the column spacing a is 100nm-10μm, and in the vertical direction, every two layers is a combination period c, Its value is 100 nm to 10 μm.

In the structure of the above-mentioned light-emitting element 1, the three-dimensional woodpile photonic crystal 70 can also be fabricated on a thin layer of gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors, and the formation of the The N-type semiconductor layer 60 , therefore, the second electrode 80 is formed and disposed on the N-type semiconductor layer 60 . the

When the nano organic luminescent material, nano inorganic luminescent material, fluorescent dye, fluorescent dye, nano fluorescent powder or quantum dot fluorescent material in the fluorescent layer 90 is filled into the gap of the three-dimensional wood pile photonic crystal 70, the light source of the light emitting element 1 is formed. The package body, wherein the three-dimensional woodpile-shaped photonic crystal 70 has a photonic energy gap characteristic, which limits light to only propagate in the vertical direction to avoid the loss of light in the horizontal direction, thereby improving its luminous efficiency, and at the same time, it can pass through the three-dimensional woodpile-shaped photonic crystal 70. The crystal modulates the luminous spectrum, so not only the luminous efficiency is improved, but also the color temperature of the luminous element 1 can be modulated, and the cool white light can be changed into warm white light, thereby improving its color rendering. the

Please refer to FIG. 2 and FIG. 5 . FIG. 5 is a schematic structural diagram of a white light emitting element 1 according to another embodiment of the present invention. A light-emitting element 1, comprising a first electrode 10; a conductive substrate 20, disposed on the first electrode 10; a metal reflective layer 30, disposed on the conductive substrate 20; a P-type semiconductor layer 40, disposed on the 30 on the metal reflective layer; a light-emitting layer 50, configured on the P-type semiconductor layer 40; an N-type semiconductor layer 60, configured on the light-emitting layer 50; a three-dimensional wood pile photonic crystal 70, the gap is filled with a fluorescent Object 91 , the three-dimensional woodpile photonic crystal 70 is fabricated on the N-type semiconductor layer 60 , and a second electrode 80 is disposed on the three-dimensional woodpile photonic crystal 70 . the

The material of the conductive substrate 20 can be silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated multi-layer metal. The metal reflection layer 30 can be made of platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals and alloys. The material of the P-type semiconductor layer 40 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The material of the N-type semiconductor layer 60 may be gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors. The light-emitting layer 50 can be made of indium gallium nitride/gallium nitride (InGaN/GaN), aluminum gallium nitride/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs). Multilayer quantum wells or silicon carbide (SiC). Wherein the material of the fluorescent substance 91 can be nano organic luminescent material, nano inorganic luminescent material, fluorescent dye, fluorescent dye, nano fluorescent powder or quantum dot fluorescent material. the

The material of the three-dimensional woodpile photonic crystal 70 can be selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or a combination thereof. The semiconductor material can be gallium nitride, indium gallium nitride, indium gallium nitride, aluminum gallium nitride, aluminum gallium arsenide, gallium arsenide or a combination thereof; the organic polymer can be polystyrene series, polymethyl Methyl acrylate series, polymaleic acid series, polylactic acid series, polyamino acid series polymers or combinations thereof; the inorganic compound can be Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO ₂ , SnO ₂ , TiO ₂ , ZrO 2 , HfO ₂ , ThO ₂ , CeO ₂ , CoO ₂ , MnO ₂ , IrO ₂ , VO ₂ , WO ₃ , MoO ₃ , Al _{2 O 3 ,} Y ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O ₃ , B ₂ O ₃ , Cr ₂ O ₃ , Fe ₂ O ₃ , Fe ₃ O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe _2. WTe ₂ , Cu ₂ S, Cu ₂ Se, Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or combinations thereof; the metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti , Zr, V, Nb, Mo, W, Mn or combinations thereof. In the three-dimensional woodpile photonic crystal 70, the column height h of each layer is 100nm-10μm, the column width w is 100nm-10μm, and the column spacing a is 100nm-10μm, and in the vertical direction, every two layers is a combination period c, Its value is 100 nm to 10 μm.

In the structure of the above-mentioned light-emitting element 1, the three-dimensional woodpile photonic crystal 70 can also be fabricated on a thin layer of gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductors, and the formation of the The N-type semiconductor layer 60 , therefore, the second electrode 80 is formed and disposed on the N-type semiconductor layer 60 . the

In this embodiment, the fluorescent layer 90 is not additionally added, but the fluorescent material 91 is filled in the air gap of the three-dimensional wood pile photonic crystal 70 to form the light source package of the light emitting element 1, and the light element 1 of white light is obtained. . The light-emitting element 1 with this composite structure restricts the propagation direction of light through the three-dimensional wood-pile photonic crystal 70, avoids light loss, and improves its luminous efficiency. Therefore, not only the luminous efficiency is improved, but also the color temperature of the light-emitting element 1 can be adjusted, and the cool white light can be changed into warm white light to improve its color rendering. the

Please refer to Table 1. Table 1 explains the comparison of color temperature and color rendering with or without using the three-dimensional wood-pile photonic crystal 70. It can be seen that after using the three-dimensional wood-pile photonic crystal 70, the color temperature is adjusted to Visually more comfortable white light (the color temperature range is between 4000K-5000K), and its color rendering is also improved, hereby to prove the achievements of the present invention. the

Table 1

Fig. 6 is a broken line diagram of the difference before and after using the three-dimensional woodpile photonic crystal in the white light emitting element of the present invention. As shown in Figure 6, the horizontal axis is the wavelength of light emitted by the light-emitting element, which is between 400nm and 800nm, the vertical axis is the relative luminous intensity of the colored light in each band, and the dotted line is the white light using the three-dimensional woodpile photonic crystal 70. The light-emitting element 1 shows that it can reduce the relative luminous intensity of light with wavelengths of purple, blue, green, yellow, and orange, thereby increasing the ratio of warm-colored light to white light, thereby achieving the effect of reducing the color temperature. the

Therefore, the light-emitting element 1 of the composite structure of the present invention is formed by using a vertical blue light-emitting diode crystal grain as a substrate, and fabricating the three-dimensional woodpile photonic crystal 70 on the N-type semiconductor layer 60 of the blue light-emitting diode grain. The light-emitting element 1 with a composite structure restricts the propagation direction of light through the three-dimensional wood-pile photonic crystal 70, so that light can only propagate in the vertical direction to reduce light loss, thereby improving the luminous efficiency of the light-emitting element 1, and can obtain The light-emitting element 1 for blue light with high luminous efficiency. In addition, in order to obtain the light-emitting element 1 of white light, the fluorescent layer 90 can also be added on the three-dimensional wood pile photonic crystal 70, so that the nano-phosphor powder or quantum dot fluorescent material in the fluorescent layer 90 can be filled into the three-dimensional wood pile The light source package of the light emitting element 1 is formed in the gap of the photonic crystal 70, or the light source package of the light emitting element 1 is formed by filling the phosphor 91 in the gap of the three-dimensional wood pile photonic crystal 70. The photonic crystal 70 limits the propagation direction of light, avoids light loss, and improves its luminous efficiency. At the same time, the luminous spectrum can be modulated through the three-dimensional wood-pile photonic crystal 70, which can not only improve the luminous efficiency, but also adjust the light emitting element 1 The color temperature can be changed from cool white light to warm white light, thereby improving its color rendering. the

Symbol Description

1 Light emitting element

10 first electrode

20 conductive substrate

30 metal reflective layer

40 P-type semiconductor layer

50 luminescent layers

60 N-type semiconductor layer

70 Three-dimensional wood pile photonic crystal

80 second electrode

90 fluorescent layer

91 Phosphors

w column width

h column height

a column spacing

c cycle.

Claims (29)

1. A light-emitting element, characterized in that it comprises: a first electrode; a conductive substrate configured on the first electrode; a metal reflective layer configured on the conductive substrate; a P-type semiconductor layer configured on the metal reflective layer; a light-emitting layer configured on the P-type semiconductor layer; an N-type semiconductor layer configured on the light-emitting layer; A three-dimensional woodpile photonic crystal fabricated on the N-type semiconductor layer; and A second electrode is arranged on the three-dimensional wood pile photonic crystal. 2 . The light emitting device according to claim 1 , further comprising a fluorescent layer disposed on the three-dimensional woodpile photonic crystal. 3 . 3. The light-emitting element according to claim 1, wherein the material of the conductive substrate is silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated Multiple layers of metal. 4. The light-emitting element according to claim 1, wherein the material of the metal reflective layer is platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals and alloys. 5. The light-emitting device as claimed in claim 1, wherein the material of the P-type semiconductor layer is gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductor. 6. The light-emitting device according to claim 1, wherein the light-emitting layer is made of indium gallium nitride/gallium nitride (InGaN/GaN), aluminum gallium nitride/gallium nitride (AlGaN/GaN) or Multilayer quantum wells of aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) or silicon carbide (SiC). 7. The light-emitting device according to claim 1, wherein the material of the N-type semiconductor layer is gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductor. 8. The light-emitting element according to claim 1, wherein the material of the three-dimensional woodpile photonic crystal is selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, A metal or combination thereof. 9. The light-emitting device according to claim 8, wherein the semiconductor material is GaN, InGaN, InGaN, AlGaN, AlGaAs, GaAs or combinations thereof. 10. The light-emitting element according to claim 8, characterized in that: the organic polymer is polystyrene series, polymethyl methacrylate series, polymaleic acid series, polylactic acid series, polyamino acid series Polymers or combinations thereof. 11. The light-emitting element according to claim 8, wherein the inorganic compound is Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO ₂ , SnO ₂ , TiO ₂ , ZrO ₂ , HfO ₂ , ThO ₂ , CeO ₂ , CoO ₂ , MnO ₂ , IrO ₂ , VO ₂ , WO _{3 , MoO 3 ,} Al ₂ O 3 , Y ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O _{3 ,} B ₂ O _3. Cr ₂ O ₃ , Fe ₂ O ₃ , Fe 3 O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, _CoS , CoSe, CoTe , NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe ₂ , WTe ₂ , Cu ₂ S, Cu ₂ Se , Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or a combination thereof. 12. The light-emitting element according to claim 8, wherein the metal is Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W , Mn or a combination thereof. 13 . The light-emitting element according to claim 1 , wherein the column height of the three-dimensional woodpile photonic crystal is 100 nm-10 μm, the column width is 100 nm-10 μm, and the column spacing is 100 nm-10 μm. . 14. The light-emitting element according to claim 1, wherein the period of the three-dimensional woodpile photonic crystal in the vertical direction is 100 nm˜10 μm. 15. The light-emitting element according to claim 2, wherein the fluorescent layer is made of nano-organic light-emitting materials, nano-inorganic light-emitting materials, fluorescent dyes, fluorescent dyes, nano-phosphor powders or quantum dot fluorescent materials. 16. A light-emitting element, characterized in that it comprises: a first electrode; a conductive substrate configured on the first electrode; a metal reflective layer configured on the conductive substrate; a P-type semiconductor layer configured on the metal reflective layer; a light-emitting layer configured on the P-type semiconductor layer; an N-type semiconductor layer configured on the light-emitting layer; A three-dimensional woodpile photonic crystal, the gap of which is filled with a phosphor, and the three-dimensional woodpile photonic crystal is fabricated on the N-type semiconductor layer; and A second electrode is arranged on the three-dimensional wood pile photonic crystal. 17. The light-emitting element according to claim 16, wherein the material of the conductive substrate is silicon (Si), silicon carbide (SiC), zinc sulfide (ZnS), zinc selenide (ZnSe), electroplated copper or electroplated Multiple layers of metal. 18. The light-emitting element according to claim 16, wherein the material of the metal reflective layer is platinum, gold, silver, copper, aluminum, nickel, titanium, chromium, palladium or a combination of the above metals and alloys. 19. The light-emitting device as claimed in claim 16, wherein the material of the P-type semiconductor layer is gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride-based or nitrogen-based semiconductor. 20. The light-emitting element according to claim 16, wherein the light-emitting layer is made of indium gallium nitride/gallium nitride (InGaN/GaN), aluminum gallium nitride/gallium nitride (AlGaN/GaN) or Multilayer quantum wells of aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) or silicon carbide (SiC). 21. The light emitting device as claimed in claim 16, wherein the material of the N-type semiconductor layer is gallium nitride (GaN), indium gallium nitride (InGaN), gallium nitride or nitrogen-based semiconductor. 22. The light-emitting element according to claim 16, wherein the material of the three-dimensional woodpile photonic crystal is selected from a semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, A metal or combination thereof. 23. The light-emitting element according to claim 22, wherein the semiconductor material is GaN, InGaN, InGaN, AlGaN, AlGaAs, GaAs or combinations thereof. 24. The light-emitting element according to claim 22, characterized in that: the organic polymer is polystyrene series, polymethyl methacrylate series, polymaleic acid series, polylactic acid series, polyamino acid series Polymers or combinations thereof. 25. The light-emitting element according to claim 22, wherein the inorganic compound is Ag ₂ O, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO ₂ , SnO ₂ , TiO ₂ , ZrO ₂ , HfO ₂ , ThO ₂ , CeO 2 , CoO ₂ , MnO ₂ , IrO ₂ , VO ₂ , WO _{3 , MoO 3 ,} Al ₂ O ₃ , Y ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O _{3 ,} B ₂ O _3. Cr ₂ O ₃ , Fe ₂ O ₃ , Fe 3 O ₄ , V ₂ O ₅ , Nb ₂ O ₅ , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, _CoS , CoSe, CoTe , NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , WSe ₂ , WTe ₂ , Cu ₂ S, Cu ₂ Se , Cu ₂ Te, Bi ₂ S ₃ , Bi ₂ Se ₃ , Bi ₂ Te ₃ , SiC, TiC, ZrC, WC, NbC, TaC, Mo ₂ C, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si ₃ N ₄ , Zr ₃ N ₄ or a combination thereof. 26. The light-emitting element according to claim 22, wherein the metal is Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W , Mn or a combination thereof. 27. The light-emitting element according to claim 16, wherein the column height of the three-dimensional woodpile photonic crystal is 100 nm-10 μm, the column width is 100 nm-10 μm, and the column spacing is 100 nm-10 μm. 28. The light-emitting element according to claim 16, wherein a combination period of the three-dimensional woodpile photonic crystal in the vertical direction is 100 nm˜10 μm. 29. The light-emitting element according to claim 16, wherein the material of the fluorescent substance is a nano-organic light-emitting material, a nano-inorganic light-emitting material, a fluorescent dye, a fluorescent dye, a nano-phosphor powder or a quantum dot fluorescent material.