CN104810257A - Metal organic chemical vapor deposition equipment and temperature control method thereof - Google Patents

Abstract

The invention provides a metal organic chemical vapor deposition equipment and a temperature control method thereof. The apparatus includes: a chamber; a susceptor mounted inside the chamber and capable of rotating, wherein at least one substrate is placed on the susceptor; a plurality of heaters for heating the susceptor whose temperatures are independently controlled; a gas injector , which is located at the upper part of the susceptor and injects Group III gas and Group V gas toward the susceptor; a plurality of temperature detection sensors, which are located at the upper part of the susceptor, and measure the temperature of the heating zone heated by each heater; and a controller which stores The temperature setting value required by the heating zone, and the temperature of the heating zone is controlled by comparing the detection temperature value detected by each temperature detection sensor with the required setting value of the heating zone. By effectively adjusting the temperature conditions necessary for each epitaxial process in metal organic chemical vapor deposition equipment, temperature ramping can be uniformly applied to the entire substrate during the entire process by increasing the temperature from room temperature to 1200 °C Execute the craft. Process efficiency and deposition uniformity are thus improved.

Description

Metal organic chemical vapor deposition equipment and its temperature control method

This application is a divisional application of the patent application with the application number 200980162274.8, the application date is October 28, 2009, and the invention title is "Metal Organic Chemical Vapor Deposition Equipment and Its Temperature Control Method".

technical field

The present invention relates to a metal-organic chemical vapor deposition equipment and its temperature control method, and more particularly, to a metal-organic chemical vapor deposition equipment capable of controlling the temperature of a plurality of separated heating zones and its temperature control method.

Background technique

Nitride materials are well known as materials for manufacturing light emitting devices. A light-emitting device using a nitride material mainly has a buffer layer made of GaN crystal, an n-type doped layer made of n-type GaN crystal, an active layer made of InGaN, etc. layer and the structure of the p-type doped layer made of p-type GaN. Also, these layers are sequentially stacked in one metal organic chemical vapor deposition equipment chamber.

However, the temperature conditions for the respective layers are different, and in order to satisfy the temperature conditions, the temperature conditions are effectively controlled each time the respective layers are grown. Also, if a plurality of wafers are fixed on the susceptor and a process is performed, the temperature uniformity of the entire area of the susceptor has a significant influence on the process efficiency. For example, if the temperature for forming the n-type doped layer is 1200°C, the temperature for forming the active layer may be 700°C to 900°C. Furthermore, in the case of a multi-layer active layer, the process temperature will be repeatedly changed between 700°C and 900°C.

Contents of the invention

In order to efficiently perform the process and obtain high-quality light-emitting devices, temperature control in metal organic chemical vapor deposition equipment is an extremely important technology. If this temperature control is effectively performed, a highly efficient light emitting device can be obtained. Accordingly, it is an object of the present invention to more efficiently perform temperature control of a metal organic chemical vapor deposition apparatus.

The present invention provides a metal organic chemical vapor deposition apparatus and its temperature control method, wherein the temperature of the susceptor can be effectively controlled in each epitaxial process in the metal organic chemical vapor deposition apparatus.

A metal organic chemical vapor deposition apparatus according to the present invention includes: a chamber; a susceptor, rotatably installed in the chamber and configured to have at least one substrate fixed therein; a plurality of heaters configured to Heating the susceptors and having their independently controlled temperatures; a gas injector placed above the susceptor and configured to inject Group III gas and Group V gas toward the susceptor; a plurality of temperature detection sensors placed on one side of the susceptor and configured to measure the temperature of the heating zone heated by each heater; and a controller configured to store the required temperature setting value of each heating zone, and by combining the detection temperature value detected by each temperature detection sensor with the The temperature set points required for the heating zone are compared to control the temperature of the heating zone.

The heating zone may include individual heaters that are independently controlled, the temperature controller may include an individual controller for controlling each heater, and an individual power supply for independently providing power to each heater may be connected to each heater.

The temperature controller may include a separate controller for controlling each heating zone, storing the temperature setpoint for any one heating zone as a typical temperature setpoint, and controlling the temperature of the heating zone according to the typical temperature setpoint.

The temperature controller can control the temperature of the typical heating zone selected from each heating zone according to the typical temperature setting value, and according to the detection detected by the temperature detection sensor used to detect the temperature of the typical heating zone among the temperature detection sensors Temperature value to control the temperature of the remaining heating zones other than the typical heating zone.

The temperature controller may measure a temperature ramping tendency detected by the typical heating zone, and perform control such that the remaining heating zones other than the typical heating zone coincide with the temperature ramping tendency of the typical heating zone.

The temperature ramp trend may be the temperature ramp rate of a typical heating zone.

The temperature controller can store the individual temperature setpoints required for each heating zone and control the temperature of each heating zone using the individual temperature setpoints.

The temperature controller may measure a temperature inclination tendency detected in each heating zone and perform control so that the heating zone has the temperature inclination tendency.

The temperature ramping trend may be the temperature ramping speed of each heating zone.

The temperature ramp trend may be a temperature change for each of the temperature set points of the heating zone.

The temperature controller may calculate an average value of the temperatures detected during a certain number of susceptor rotations, and control the temperature of the heating zone by comparing the average value with respective temperature setpoints.

The temperature of the heating region detected by the temperature detecting sensor may be the temperature of the susceptor.

The temperature of the heating region detected by the temperature detection sensor may be the temperature of the substrate.

The temperature of the heating region detected by the temperature detection sensor may be the temperature of the susceptor and the substrate.

The method for controlling the temperature of a plurality of heating zones for metal organic chemical vapor deposition equipment according to the present invention includes: detecting the temperature of the heating zone by utilizing each temperature detection sensor; comparing with each temperature setpoint; and controlling the heating zones according to the temperature setpoints by utilizing a temperature controller for storing the desired temperature setpoints for each heating zone.

The heating zone may include individual heaters that are independently controlled, the temperature controller may include an individual controller for controlling each heater, and an individual power supply for individually providing power to each heater may be connected to each heater.

The temperature controller may include a separate controller for controlling each heating zone, storing the temperature setpoint for any one heating zone as a typical temperature setpoint, and controlling the temperature of the heating zone according to the typical temperature setpoint.

The temperature controller can control the temperature of the typical heating zone selected from each heating zone according to the typical temperature setting value, and according to the temperature detected by the temperature detection sensor for detecting the temperature of the typical heating zone among the temperature detection sensors. The temperature value is detected to control the temperature of the remaining heating zone except the typical heating zone.

The temperature controller may measure a temperature inclination tendency detected through the typical heating zone, and perform control such that the remaining heating zones other than the typical heating zone coincide with the temperature inclination tendency of the typical heating zone.

The temperature ramping trend may be the temperature ramping velocity of a typical heating zone.

The temperature controller can store the individual temperature setpoints required for each heating zone and control the temperature of each heating zone using the individual temperature setpoints.

The temperature controller may measure a temperature inclination tendency detected in each heating zone and perform control so that the heating zone has the temperature inclination tendency.

The temperature ramping trend may be the temperature ramping speed of each heating zone.

The temperature ramp trend may be a temperature change for each of the temperature set points of the heating zone.

The temperature controller may calculate an average value of the temperatures detected during a certain number of susceptor rotations, and control the temperature of the heating zone by comparing the average value with respective temperature setpoints.

The temperature of the heating region detected by the temperature detecting sensor may be the temperature of the susceptor.

The temperature of the heating region detected by the temperature detection sensor may be the temperature of the substrate.

The temperature of the heating region detected by the temperature detection sensor may be the temperature of the susceptor and the substrate.

Beneficial effect

According to the metal organic chemical vapor deposition equipment and temperature control method of the present invention, for the metal organic chemical vapor deposition equipment performing the process during the temperature change from normal temperature to 1200°C, the temperature required for the epitaxy process will be effectively controlled conditions such that the temperature ramp required during the process is performed uniformly in all substrates. Therefore, this is advantageous because deposition uniformity and process efficiency can be improved.

Brief description of the drawings

FIG. 1 is a view showing one embodiment of a metal organic chemical vapor deposition apparatus;

2 is a view showing a first embodiment of a temperature control structure of a metal organic chemical vapor deposition apparatus;

3 is a flowchart illustrating a first control method utilizing a temperature control structure of the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 2;

4 is a flow chart illustrating a second control method utilizing the temperature control structure of the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 2;

Fig. 5 is a graph illustrating a temperature gradient trend in each temperature control zone;

6 is a view showing a second embodiment of a temperature control structure of a metal organic chemical vapor deposition apparatus;

FIG. 7 is a flowchart illustrating a control method of the temperature control structure using the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 6 .

Detailed ways

A metal organic chemical vapor deposition apparatus and a temperature control method thereof according to an embodiment are described below.

FIG. 1 is a view showing one embodiment of a metal organic chemical vapor deposition apparatus.

As shown in FIG. 1 , the metal organic chemical vapor deposition apparatus includes: a reaction chamber 100 and a gas injector 101 for injecting a process gas in the reaction chamber 100 from the upper part to the lower part. The gas injector 101 may include a shower head, a nozzle, etc. for injecting Group III gases and Group V gases. In addition, a plurality of observation points 101a having bottom openings are formed in each gas injector so that a temperature detection sensor which will be described later can detect the temperature.

Furthermore, a susceptor 102 in which a substrate 103 such as at least one piece of sapphire substrate 103 is provided is installed below the gas injector 101 . In FIG. 1 , the substrate 103 may be a satellite susceptor, which has at least one substrate 103 fixed therein, and can be detached from the susceptor 102 and pulled outward.

The subsidiary susceptor may be configured to rotate around the rotation axis 104 of the susceptor 102 by means of rotation of the susceptor 102 and to rotate and rotate by itself. For this, the motor 105 is installed below the susceptor 102 , and the center of the susceptor 102 is coupled to the rotation shaft 104 of the motor 105 . In addition, although not shown, for the rotation of the sub susceptor, the sub susceptor may be configured to be rotated by air pressure or mechanical operation.

In addition, a plurality of heaters 200 , 201 , 202 , and 203 for heating the susceptor 102 to a high temperature are installed below the susceptor 102 . The heaters may be formed of tungsten heaters, ceramic heaters, RF heaters or equivalent. The heaters include a first heater 200 , a second heater 201 , a third heater 202 and a fourth heater 203 . The first heater 200 heats a portion near the center which is the innermost side of the susceptor 102 .

In this embodiment, the area heated by the first heater 200 is called a first heating area. In addition, the second heater 201, the third heater 202, and the fourth heater 203 are sequentially placed outside the first heater 200, and will be combined with the second heater 201, the third heater 202, and the fourth heater. The corresponding zones of the device 203 are sequentially divided into a second heating zone, a third heating zone and a fourth heating zone. In addition, the first heater 200 , the second heater 201 , the third heater 202 and the fourth heater 203 include: a first temperature detecting sensor for detecting the temperature of the first heating zone heated by the first heater 200 240, the second temperature detecting sensor 241 for detecting the temperature of the second heating zone, the third temperature detecting sensor 242 for detecting the temperature of the third heating zone, and the fourth temperature detecting sensor 242 for detecting the temperature of the fourth heating zone Probe sensor 243 . The heating area detected by each temperature detection sensor 240, 241, 242, and 243 can be each position on the susceptor 102, can become the area for detecting the temperature of the substrate 103 (ie, the wafer), or detect during the rotation of the susceptor 102. region of both the substrate 103 and wafer temperatures.

Meanwhile, in another embodiment, a temperature detection sensor may be placed on the lower side of the susceptor 102 . Here, the temperature detecting sensor may be a thermocouple or a pyrometer. If a pyrometer is used, a viewing point can be created under a heater such as an RF heater.

FIG. 2 is a view showing a first embodiment of a temperature control structure of a metal organic chemical vapor deposition apparatus.

As shown in FIG. 2, in the temperature control structure of the metal organic chemical vapor deposition apparatus, a plurality of power sources and a plurality of controllers are connected to respective heaters. First, the first power supply 210 for supplying electric power to the first heater 200 is connected to the first heater 200 . The first power source 210 is equipped with a first individual controller 220 for controlling the first power source 210 . In addition, a second power source 211 for supplying electric power to the second heater 201 is connected to the second heater 201 . The second power source 211 is equipped with a second individual controller 221 for controlling the second power source 211 . Furthermore, a third power source 212 for supplying electric power to the third heater 202 is connected to the third heater 202 . The third power source 212 is equipped with a third separate controller 222 for controlling the third power source 212 . In addition, a fourth power supply 213 for supplying electric power to the fourth heater 203 is connected to the fourth heater 203 . The fourth power source 213 is equipped with a fourth individual controller 223 for controlling the fourth power source 213 .

In addition, a main controller 230 for controlling the first, second, third and fourth individual controllers 220 , 221 , 222 and 223 is also provided. In addition, each of the individual controllers 220, 221, 222, and 223 calculates an average value of temperatures detected during one or more rotations of the susceptor 102 and determines the average value as a detected temperature value. That is, temperature control for each heating zone is performed by comparing a temperature average value with a temperature set point.

3 is a flowchart illustrating a first control method using the temperature control structure of the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 2 .

As shown in FIG. 3, the first, second, third, and fourth individual controllers 220, 221, 222, and 223 may be assigned the same first-stage temperature set point (S10). The temperature set point may be a ramping temperature that is targeted in each zone. The reason for setting the ramping temperature to the same temperature set value (or set point) is to uniformly deposit the metal organic substance on the entire substrate 103 by keeping the susceptor 102 at the same temperature.

For example, in the epitaxial process for manufacturing light-emitting devices (LEDs), assuming that the temperature 1200° C. for heat treatment and cleaning of the substrate 103 under the first hydrogen atmosphere on the substrate 103 is the target temperature, the temperature detected by the temperature detection sensor This target temperature can become the temperature setpoint.

In addition, if the same first-stage temperature set point is assigned to the individual controllers 220, 221, 222, and 223, the first, second, third, and fourth individual controllers 220, 221, 222, and 223 , second, third and fourth power supplies 210, 211, 212 and 213 apply the same temperature setpoint. Accordingly, the first, second, third, and fourth heaters 200, 201, 202, and 203 heat the susceptor 102 to the same temperature setting (S11). Here, the susceptor 102 rotates at a specific rotation speed.

At the same time, the first, second, third and fourth temperature detection sensors 240, 241, 242 and 243 detect the temperature of the susceptor 102 in each heating zone, and transmit the detected temperature values to the individual controllers 220, 221 , 222 and 223 (S12). In addition, when the detected temperature reaches the first stage temperature setpoint, each of the heaters 200, 201, 202, and 203 maintains the associated temperature within the acceptable error range of the first stage temperature setpoint. The acceptable error range may be within 3% of the set temperature.

When the temperature slopes on the first-level temperature setting value, the temperature detection sensors 240, 241, 242 and 243 analyze and determine the temperature slope trend (ie, temperature rising trend or temperature falling trend) of the first heating zone (S13) . The temperature ramping trend may be a temperature ramping time versus temperature value (ie, temperature rising rate or temperature falling rate).

The temperature slope trend is related to the deposition uniformity and deposition quality of the wafer in the epitaxy process. If the temperature inclination tendency is different in each heating zone, it is difficult to obtain high-quality epitaxial process results because deposition quality is deteriorated. Therefore, if the same or very similar temperature gradient trends are maintained in the various heating zones, an improvement in epitaxial quality can be expected. The control of the temperature inclination tendency will be described in detail with reference to FIG. 5 .

Temperature ramping is performed by adjusting the temperature ramping tendency so that the first, second, third and fourth heating zones have the same or very similar temperature ramping tendency (S14). If each temperature of the first, second, third, and fourth heating zones reaches a temperature set value, a desired epitaxial process is performed (S15).

At this time, it is determined whether the relevant process is completed (S16). If, as a result of the determination, the main controller 230 determines that the next process needs to be performed, a temperature setting value different from the first-stage temperature setting value is input (S17). For example, master controller 230 may provide a second stage temperature set point (i.e., (1+n) stages, where n is natural number) as the temperature setting value. Therefore, the first, second, third and fourth individual controllers 220, 221, 222 and 223 perform control such that the heaters 200, 201, 202 and 203 The next-level temperature setpoint performs a temperature ramp. Also, maintain the temperature ramp trend.

In addition, when a plurality of epitaxial processes having different conditions are performed in one reaction chamber 100, temperature setting may be performed for a plurality of different temperature setting values. Since one epitaxial process is performed in one reaction chamber 100 , the temperature setting may be changed in various ways depending on the process operating conditions of the reaction chamber 100 .

Meanwhile, in another embodiment, temperature ramping is performed by inputting different and unique temperature setting values to the heaters 200 , 201 , 202 , and 203 . In this case, if a large number of substrates 103 are set in a large-sized susceptor 102, when it is difficult to control the temperature in a large area with the same temperature setting value, or for the purpose of epitaxial uniformity, the process target is in each The heating zones have different temperature ramp values, and when the process efficiency is good, the temperature ramp is performed. In another example, temperature ramping is performed when the temperature ramping needs to be more aggressively controlled, such as where different processes are required at each location of the susceptor 102 .

The method used for this embodiment is shown in FIG. 4 . FIG. 4 is a flowchart illustrating a second control method using the temperature control structure of the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 2 .

As shown in FIG. 4, the main controller 230 assigns unique temperature setting values to the first, second, third, and fourth individual controllers 220, 221, 222, and 223 (S20). Each unique temperature setpoint can be a ramping temperature as an independent target in each heating zone.

When the individual controllers 220, 221, 222, and 223 are assigned individual temperature setpoints, the first, second, third, and fourth individual controllers 220, 221, 222, and 223 supply the individual temperature setpoints to the first, second, third and fourth power sources 210 , 211 , 212 and 213 . Accordingly, the first, second, third, and fourth heaters 200, 201, 202, and 203 heat the susceptor 102 according to the unique temperature setting value (S21). Here, the susceptor 102 is rotated at a certain rotation speed.

Next, the first, second, third and fourth temperature detection sensors 240, 241, 242 and 243 detect the temperature of each heating zone and transmit the detected temperature to the individual controllers 220, 221, 222 and 223 (S22) . When the detected temperature reaches each unique temperature setpoint, each heater 200, 201, 202, and 203 maintains the relevant temperature within an acceptable error range of the preset unique temperature setpoint. The acceptable error range may be within 3% of the set temperature.

When the temperature is ramped on the unique temperature setting value, the first temperature detection sensor 240 determines the temperature ramping trend (temperature rising trend or temperature falling trend) of the first heating zone. The characteristics of this temperature inclination tendency are the same as those of the first method.

In the case where the first, second, third and fourth heating zones are adjusted to have the same or very similar temperature slope tendencies, when the temperature of each of the first, second, third and fourth heating zones When the preset unique temperature setting value is reached, the desired epitaxial process is performed ( S24 , S25 ).

At this time, it is determined whether the relevant process is completed (S26). If, as a result of the determination, the main controller 230 determines that the next process needs to be performed, the main controller 230 inputs a second new unique temperature setting value different from the first unique temperature setting value as the temperature setting value (S27). Therefore, the first, second, third and fourth individual controllers 220, 221, 222 and 223 perform control so that the heaters 200, 201, 202 and In 203, temperature ramping is performed. Also, the temperature ramp trend is maintained.

Meanwhile, FIG. 5 shows the trend of temperature inclination in the temperature control zone. In FIG. 5 , the process for maintaining the temperature gradient tendency in each heater or zone is described by taking the LED epitaxial process as an example.

As shown in FIG. 5 , to perform an epitaxial process, a plurality of substrates 103 such as sapphire are placed on a susceptor 102 within a reaction chamber 100 . Next, the inside and outside of the reaction chamber 100 are isolated, and preparations for starting the process are performed. During the preparation time for starting the process, the first, second, third and fourth temperature detection sensors 240, 241, 242 and 243 measure the temperature of the relevant heating zone and transmit the detection results to the individual controllers 220, 221, 222 and 223.

Execute the processes in the required process sequence. The first process is a cleaning process for cleaning the substrate 103 by heat treatment. For the cleaning process, the temperature setting is set at 1000° C. to 1200° C., and the inside of the reaction chamber 100 becomes a hydrogen atmosphere.

If the respective temperature setting values are set to be the same, the main controller 230 transmits the same temperature setting values to the first, second, third and fourth individual controllers 220 , 221 , 222 and 223 . If different temperature setpoints are set in each heating zone for process uniformity, the master controller 230 communicates the unique temperature setpoints to the individual controllers 220 , 221 , 222 and 223 . In either case, the temperature required in the heat treatment process is 1000°C to 1200°C within an acceptable error range.

If the temperature setpoint is set as described above, the heater performs temperature ramping according to the temperature setpoint. In the heat treatment process, the temperature ramp condition is to increase the temperature to the temperature set point. At this time, the temperature inclination tendency (that is, the rate of temperature rise) in the first heating zone is detected. In other words, the temperature rise rate is detected from the time-consuming temperature, and then each of the temperature rise rates in the second, second, and fourth heating zones is compared with the temperature rise rate in the first heating zone. Separate controllers 220, 221, 222, and 223 for controlling the respective heaters 200, 201, 202, and 203 control each heating zone if a heating zone having a temperature rising rate different from that of the first heating zone is detected. The temperature rise rate in the zone is such that the temperature rise rate is uniformly performed in each heating zone.

When each of the temperatures of the first, second, third and fourth heating zones reaches a temperature setpoint within an acceptable error range, the substrate 103 is heated and annealed to a temperature corresponding to the relevant temperature setpoint Under 10 to 20 minutes. The heat treatment process is a cleaning process for removing a foreign substance layer such as an oxide film on the substrate 103 . Here, the inside of the reaction chamber 100 becomes a hydrogen atmosphere.

When the heat treatment process is completed, a process of depositing a GaN buffer layer is performed. The process of depositing the GaN buffer layer is a process of depositing an approximately 100 nm thick GaN layer at 450°C to 600°C. For the heat treatment process, the temperature in each heating zone where the temperature has been raised must be lowered to 450°C to 600°C. The temperature at this time becomes the second temperature setting value.

Therefore, when the main controller 230 transmits the second temperature setting value to the first, second, third and fourth individual controllers 220, 221, 222 and 223, the individual controllers 220, 221, 222 and 223 respectively control The first, second, third, and fourth heaters 200, 201, 202, and 223 lower the temperature to a second temperature set point. The first, second, third and fourth temperature detection sensors 240, 241, 242 and 243 continue to detect the temperature drop state and transmit the detected temperature to the first, second, third and fourth individual controllers 220, 221 , 222 and 223. In addition, the main controller 230 detects the temperature inclination tendency received from the first individual controller 220, and performs control such that the second, third, and fourth heaters 201, 202, and 203 operate according to the detected temperature inclination tendency, and thus The temperature drops of the first, second, third and fourth heating zones have the same temperature slope tendency.

If the buffer layer is grown to a thickness of about 100 nm, an undoped GaN layer is deposited. The undoped GaN layer is deposited at a temperature of 1000°C to 1100°C for 60 minutes.

In response, the temperature rises again. In addition, as described above, the process is performed in a state where the temperature rises of the respective heating zones have the same temperature gradient tendency. In addition, a process of depositing an active layer and a p-GaN layer is performed during performing the temperature ramp. In this case, the heating zones have the same temperature ramping tendency. It is advantageous if the same temperature gradient tendency is maintained in the individual layers as described above, since, in the substrate 103 of the susceptor 102, the layers deposited using the epitaxial process have a very uniform crystalline growth quality.

In addition, the temperature slope trend may be a temperature slope speed (ie temperature rising speed or temperature falling speed) or a temperature change of a temperature setting value. If the temperature ramp rate and temperature change are controlled identically or similarly, the epitaxial process can be performed with higher efficiency.

Meanwhile, in the metal organic chemical vapor deposition apparatus of this embodiment, the temperature control structure can be modified and realized in a different manner. FIG. 6 is a view showing a second embodiment of a temperature control structure of a metal organic chemical vapor deposition apparatus, and FIG. 7 is a diagram illustrating a temperature control structure using the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. Flow chart of the control method.

In the temperature control structure according to the second embodiment, as shown in FIG. 6 , a first power source 210 for supplying electric power to the first heater 200 is connected to the first heater 200 . The first power source 210 is equipped with a first individual controller 220 for controlling the first power source 210 . In addition, a second power source 211 for supplying electric power to the second heater 201 is connected to the second heater 201 . The second power source 211 is equipped with a second individual controller 221 for controlling the second power source 211 . Furthermore, a third power source 212 for supplying electric power to the third heater 202 is connected to the third heater 202 . The third power source 212 is equipped with a third separate controller 222 for controlling the third power source 212 . In addition, a fourth power supply 213 for supplying electric power to the fourth heater 203 is connected to the fourth heater 203 . The fourth power source 213 is equipped with a fourth individual controller 223 for controlling the fourth power source 213 . Furthermore, a main controller 230 for controlling the first individual controller 220 is provided.

In addition, unlike the first embodiment, the main controller 230 is connected to the second individual controller 220 , and it only provides the first individual controller 220 with a temperature setting value. That is, the main controller 230 provides a typical temperature setpoint to the first individual controller 220 without providing additional temperature setpoints to the remaining individual controllers 221 , 222 and 223 . In addition, the individual controllers 220 , 221 , 222 , and 223 calculate an average value of the respective detected temperatures during one or more rotations of the susceptor 102 and determine the average value as a detected temperature value. Meanwhile, temperature control is performed by using a temperature average value and a temperature value detected at a specific position.

In addition, the temperature detected by the temperature detection sensors 240, 241, 242, and 243 may be the temperature of the susceptor 102 detected during the rotation of the susceptor 102, may be the temperature of each substrate 103 (ie, wafer), or may be the The temperature of both the bottom 103 and the wafer.

FIG. 7 is a flowchart illustrating a first control method using the temperature control structure of the metal organic chemical vapor deposition apparatus according to the embodiment of FIG. 6 .

As shown in FIG. 7, the first individual controller 220 may be assigned a typical temperature setpoint (ie, a first-stage temperature setpoint) (S30). Typical temperature setpoints may be ramped temperatures that are targeted in each zone. After specifying the first level typical temperature setting value to the first individual control 220, the first temperature detection sensors 240, 241, 242 and 243 detect the temperature of the first heating zone and transmit the detected temperature value to the first individual controller 220(S31).

That is, the first heating zone becomes a typical heating zone. In addition, the first individual controller 220 transmits the temperature of the first heating zone to the second, third and fourth individual controllers 221 , 222 and 223 . Accordingly, the second, third and fourth individual controllers 221, 222 and 223 start heating according to the detected temperature of the first heating zone (S32). At this time, the susceptor 102 is rotated at a certain rotation speed.

In addition, when the temperature is inclined on the typical temperature setting value, the first temperature detection sensor 240 analyzes and determines the temperature inclined trend (ie, temperature rising trend or temperature falling trend) of the first heating zone (S33). Next, the second, third, and fourth heaters 201, 202, and 203 are controlled so that each temperature trend is adjusted (S34).

As described above, in the state where the first, second, third and fourth heating zones have been adjusted to have the same or similar temperature gradient tendency, according to the temperature of the first, second, third and fourth heating zones A desired epitaxial process is performed (S35).

Next, if the first individual controller 220 determines that the temperature has been ramped to the first level typical temperature set point, the first individual controller 220 controls the first heater 200 so that the ramped temperature is maintained. At this point, the second, third, and fourth individual controllers 221, 222, and 223 proceed according to the temperature values detected in real time by the first temperature detection sensors 240, 241, 242, and 243 and reported to the first individual controller 220. The respective heaters 200, 201, 202 and 203 are controlled such that the temperature of each heating zone is controlled to be the same or similar to the temperature of the first heating zone within an acceptable error range (S33, S34). Next, it is determined whether the next process will be performed (S37). If, as a result of the determination, the next process needs to be performed, the process is performed when the first heater 200 starts heating at (1+n) steps (n is a natural number) temperature setting (S38).

Meanwhile, in the second embodiment, the second, third and fourth heaters 201, 202 and 203 are controlled so that they track the temperature of the first heating zone. Therefore, the first, second, third and fourth individual controllers 220, 221, 222 and 223 can automatically maintain the same or similar temperature gradient trends with a time delay without additional control. In addition, even if the next process is performed, temperature inclination tendency and temperature uniformity can be ensured because the inclination conditions of the first heater 200 are different from those of the second, third, and fourth heaters 201, 202, and 203.

In addition, if possible, the temperature values of the first heating zone provided from the first individual controller 220 to the second, third and fourth individual controllers 221, 222, and 223 are provided consistently at shorter time intervals, so that More accurate control of temperature uniformity and temperature slope trends.

Claims (14)

1. a Metalorganic Chemical Vapor deposition apparatus, comprising:

Chamber;

Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;

Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;

Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;

Multiple temperature detecting sensor, is configured to the temperature measuring each thermal treatment zone of being heated by each heater; With

Temperature controller, is configured to the temperature controlling each thermal treatment zone by comparing the detecting temperature value detected by each temperature detecting sensor,

Wherein, described temperature controller comprises the multiple separate controllers for controlling each thermal treatment zone, the desired temperature of that is used in each thermal treatment zone is stored as representative temperature set point, and controls the temperature of each thermal treatment zone according to representative temperature set point,

Wherein, described temperature controller is configured to measure the temperature dip trend in the representative heat district detection selected from each thermal treatment zone, and performs control to make the residue thermal treatment zone except described representative heat district consistent with the temperature dip trend in described representative heat district.

2. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1,

Wherein multiple points of observation of lower openings are formed in described gas ejector, make described temperature detecting sensor detect the temperature of each thermal treatment zone.

3. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1,

Wherein, described multiple temperature detecting sensor is placed on below described susceptor.

4. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 2 or claim 3, wherein: described temperature controller controls the temperature in described representative heat district according to described representative temperature set point, and control the temperature of the residue thermal treatment zone except representative heat district according to the detecting temperature value by detecting for the temperature detecting sensor of the temperature detecting representative heat district among each temperature detecting sensor.

5. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 1, wherein: described temperature dip trend is the temperature dip speed in representative heat district.

6. a Metalorganic Chemical Vapor deposition apparatus, comprising:

Chamber;

Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;

Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;

Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;

Multiple temperature detecting sensor, is configured to the temperature measuring the thermal treatment zone of being heated by each heater; With

Temperature controller, is configured to store the desired temperature needed for each thermal treatment zone, and by the detecting temperature detected by each temperature detecting sensor value being controlled compared with each desired temperature needed for the thermal treatment zone temperature of the thermal treatment zone,

Wherein, described temperature controller is configured to measure the temperature dip trend detected in each thermal treatment zone, and performs control to make the temperature dip trend of each thermal treatment zone consistent with each other.

7. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 6, wherein:

The thermal treatment zone comprises the independent heater be independently controlled;

Described temperature controller comprises the separate controller for controlling each heater, and

The independent power supply of electric power is independently provided to be connected to each heater by being used for each heater.

8. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 6, wherein: described temperature controller stores each the independent desired temperature needed for each thermal treatment zone, and utilizes independent desired temperature to control the temperature of each thermal treatment zone.

9. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 8, wherein: the temperature dip trend detected in each thermal treatment zone measured by temperature controller, and performs control to make each thermal treatment zone have this temperature dip trend.

10. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 9, wherein: described temperature dip trend is the temperature dip speed of each thermal treatment zone.

11. Metalorganic Chemical Vapor deposition apparatus as claimed in claim 9, wherein: described temperature dip trend is the variations in temperature of each in the desired temperature of each thermal treatment zone.

12. 1 kinds of Metalorganic Chemical Vapor deposition apparatus, comprising:

Chamber;

Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;

Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;

Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;

Multiple temperature detecting sensor, and be configured to the temperature measuring each thermal treatment zone of being heated by each heater; With

Temperature controller, is configured to the temperature controlling the described thermal treatment zone by comparing the detecting temperature value detected by each temperature detecting sensor,

Wherein, this temperature controller calculates the mean value detecting temperature during described susceptor rotates specific times, and controls the temperature of the described thermal treatment zone by comparing this mean value,

Wherein, described temperature controller is configured to measure the temperature dip trend in the representative heat district detection selected from each thermal treatment zone, and performs control to make the residue thermal treatment zone except described representative heat district consistent with the temperature dip trend in described representative heat district.

13. 1 kinds of Metalorganic Chemical Vapor deposition apparatus, comprising:

Chamber;

Susceptor, to be rotatably mounted in this chamber and to be configured to have at least one and be fixed on substrate wherein;

Multiple heater, is configured to heat described susceptor and their temperature is controlled separately;

Gas ejector, to be positioned on described susceptor and to be configured to spray III gas and V race gas towards susceptor;

Multiple temperature detecting sensor, is configured to the temperature measuring each thermal treatment zone of being heated by each heater; With

Temperature controller, comprises the separate controller for controlling each thermal treatment zone, and described controller is configured to take the detecting temperature value detected by each temperature detecting sensor into account control each thermal treatment zone temperature,

Wherein, described temperature controller stores the representative temperature set point of the temperature for controlling the representative heat district selected from each thermal treatment zone,

Wherein, described temperature controller by the temperature value detected in described representative heat district being controlled compared with described representative temperature set point the temperature in described representative heat district, and by respectively the temperature value that detects in the residue thermal treatment zone being controlled the temperature of the described residue thermal treatment zone compared with the temperature value detected in described representative heat district.

14. 1 kinds of methods controlling the temperature of multiple thermals treatment zone of Metalorganic Chemical Vapor deposition apparatus, the method comprises:

By the temperature utilizing each temperature detecting sensor to detect the thermal treatment zone;

By the temperature value that detected by temperature detecting sensor compared with each desired temperature; With by utilizing, the temperature controller for storing the desired temperature needed for each thermal treatment zone is next controls the thermal treatment zone according to desired temperature,

Wherein, described temperature controller is configured to measure the temperature dip trend detected in each thermal treatment zone, and performs control to make the temperature dip trend of each thermal treatment zone consistent with each other.