CN104803607A - Glass substrate for display and method for manufacturing same - Google Patents
Glass substrate for display and method for manufacturing same Download PDFInfo
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- CN104803607A CN104803607A CN201510146589.0A CN201510146589A CN104803607A CN 104803607 A CN104803607 A CN 104803607A CN 201510146589 A CN201510146589 A CN 201510146589A CN 104803607 A CN104803607 A CN 104803607A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Glass Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
The objective of the present invention is to provide a glass substrate for a display and a method for manufacturing the same capable of preventing statics in removal when a glass substrate is removed from a placement table in a state that the placement table is in contact with the glass substrate. The method of the present invention includes the processes of: manufacturing a glass substrate; and forming surface unevenness by performing surface treatment on one glass surface among main surfaces of the glass substrate. In the glass surface which has gone through the surface treatment, a block unit having a height of 1nm or more from the surface roughness center surface of the surface unevenness is distributed to be installed. Also, the surface treatment is performed so that an area rate of the block unit occupying an area of the glass surface can be 0.5 to 10%. A semiconductor device is formed on the main surface of a glass substrate opposite to the glass surface by using the glass substrate, thereby manufacturing a display panel.
Description
The divisional application that the application is the applying date is on 02 27th, 2013, application number is 201310062080.9, name is called the application for a patent for invention of " manufacture method of glass substrate for display, glass substrate and indicating meter panel ".
Technical field
The present invention relates to the manufacture method of the glass substrate for display for flat-panel monitors such as liquid-crystal display, plasma display, OLED display, glass substrate and indicating meter panel.
Background technology
In the past, in the manufacture of flat-panel monitor that have employed the panel of LCD, plasm display panel or the OLED display panel that use as display panel, use exposure apparatus and form meticulous Thinfilm pattern on the glass substrate by photoetch (Photolithography).
Display pannel for these flat-panel monitors is after putting on production line by glass substrate, what through each process such as carrying, film forming, photoetch, etching, doping or wiring, manufacture obtained.In each process, due to various reason, the panel containing glass substrate is in the environment easily producing electrostatic.Such as, when glass substrate is fed on production line, will removing be peeled off every paper thus take out glass substrate one by one from the glass substrate clipping more than 2 that the lamination every paper obtains.Now, glass substrate easily produces electrostatic when removing every paper.In addition, when using semiconductor-fabricating device in order to film forming etc., glass substrate is placed in mounting table and carries out film forming.Now, easily produce electrostatic, the contact electrostatic caused due to air-flow on the glass substrate or peel off electrostatic.Peel off the electrostatic produced when electrostatic is and is taken off from mounting table by closely sealed glass substrate in mounting table.
Such electrostatic can cause various problem, does not therefore preferably produce electrostatic as far as possible.Such as, when forming TFT (thin film transistor) and wiring pattern on the glass substrate, the impurity such as dust or dust and dirt can be attached to because of electrostatic on glass substrate or wiring pattern, produces the defect of wiring pattern, stripping sometimes.In addition sometimes because the electric discharge of electric charge of accumulation can produce the destruction etc. of TFT.In addition, glass substrate sticks in mounting table because of above-mentioned electrostatic sometimes, thus sometimes can break when being taken off from mounting table by glass substrate.
In this case, there will be a known the method (patent documentation 1) except electricity using ion generator to carry out the glass substrate with electrostatic.In addition, for exposure apparatus, the surface that also there will be a known the table top placing treatment substrate (glass substrate) has the exposure apparatus (patent documentation 2) of the surfaceness of 1 μm ~ 100 μm.
On the other hand, there will be a known the glass substrate for display (patent documentation 3) that can suppress the electrostatic produced when being peeled off by glass substrate from contact condition.Specifically, the glass substrate for display of this glass substrate to be thickness of slab be 0.3mm ~ 6mm, wherein, the contact pin type surface roughness measurement device of the phase compensation type 2RC bandpass filter that measured length is 200mm by using, cutoff is 0.8mm ~ 25mm measures the W obtained
cAthe mean value of (filter center line percent ripple) is 0.03 μm ~ 0.5 μm.This glass substrate can reduce the contact area between mounting table, and can suppress electrostatic.
Further, also there will be a known chemical treatment is carried out to make its arithmetic average roughness Ra for 0.3nm ~ 1.5nm (patent documentation 4) to glass surface.Specifically, by making the arithmetic average roughness Ra of glass substrate be 0.3nm ~ 1.5nm, can reduce the contact area between glass substrate and mounting table thus, its result can reduce static content.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2009-64950 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2007-322630 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2002-72922 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2010-275167 publication
Summary of the invention
Invent problem to be solved
But, in order to form concave-convex surface on the glass surface of glass substrate, even if make above-mentioned W
cA(filter center line percent ripple) though mean value be 0.03 μm ~ 0.5 μm or chemical treatment carried out to make its arithmetic average roughness Ra for 0.3nm ~ 1.5nm to glass surface, sometimes also fully cannot obtain antistatic effect.Particularly for the glass substrate being such as formed with oxide semiconductor or low-temperature polysilicon silicon semiconductor towards fine/high resolution display together used with live width and the narrow wiring pattern of spacing, manage according to use above-mentioned parameter in the past, cannot fully corresponding surface to the quality requirements of the glass substrate of fine/high resolution display.Such as, for the glass substrate towards fine/high resolution display, even if only producing tiny flaw in formed wiring pattern is also then unaccommodated as indicating meter.In addition, also there are the following problems: if the intervals of the live width of wiring pattern or wiring pattern is narrow, then the electric discharge caused due to electrostatic, even if this electric discharge is low-level electric discharge, also easily produces the electrostatic breakdown of semiconductor element.
Therefore, the object of the present invention is to provide a kind of manufacture method of glass substrate for display and glass substrate and employ the indicating meter panel of this glass substrate, the electrostatic when manufacture method of described glass substrate for display can suppress glass substrate to move or carry, and the state contacted from mounting table with glass substrate in semiconductor-fabricating device is when taking off glass substrate from mounting table, can be difficult to when this takes off produce electrostatic.
For solving the method for problem
A mode of the present invention is the manufacture method of the glass substrate for display being formed with semiconductor element.This manufacture method has:
Make the operation of glass substrate; With
Surface treatment is carried out to the glass surface of the side in the major surfaces of described glass substrate thus the operation of formation concave-convex surface.
Carrying out in glass surface described in described surface-treated, scattering device has the protuberance of the height from the surfaceness centerplane of described concave-convex surface with more than 1nm, and the area ratio that described protuberance accounts for described glass surface area is 0.5% ~ 10%.
Now, the Rz (Rz is the maximum height being measured the concave-convex surface obtained by atomic force microscope) of described concave-convex surface is preferably more than 2 (nm).Be more preferably more than 3nm.
In addition, described area ratio is preferably 0.75% ~ 7.0%, is more preferably 1.2% ~ 4.0%.
In addition, described surface treatment preferably employs the dry etching process of plasma body.
In addition, described glass substrate is preferably semiconductor element formation glass substrate.Particularly preferably being, in described semiconductor element formation glass substrate, is the face being formed with low-temperature polysilicon silicon semiconductor or oxide semiconductor with the major surfaces of described glass surface opposition side.
A mode of the present invention is glass substrate.On the glass surface of the side in the major surfaces of this glass substrate, scattering device has the protuberance of the height from the surfaceness centerplane of concave-convex surface with more than 1nm.The area ratio that described protuberance accounts for described glass surface area is 0.5% ~ 10%, in the major surfaces of described glass substrate, uses as device side with the glass surface of the opposite side of described side glass surface opposite side.
Described glass substrate preferably forms semiconductor element on the glass surface of described opposite side.Now, the glass surface of described opposite side is preferably formed with the face of low-temperature polysilicon silicon semiconductor or oxide semiconductor.In addition, described glass substrate is formed with the thin film transistor possessing thickness and be less than the gate insulating film of 20 μm on the glass surface of described opposite side.
A mode of the present invention is the indicating meter panel being formed with semiconductor element on the glass substrate.The glass substrate of this indicating meter panel has the 1st major surfaces and the 2nd major surfaces.
Described 1st major surfaces has following glass surface: the protuberance having the height from the surfaceness centerplane of concave-convex surface with more than 1nm at this glass surface scattering device, and the area ratio that described protuberance accounts for described glass surface area is 0.5% ~ 10%.
Described 2nd major surfaces is positioned at the opposition side of described 1st major surfaces, and is formed with semiconductor element.
Invention effect
According to manufacture method and glass substrate, the indicating meter panel of the glass substrate for display of aforesaid way, electrostatic during movement or the carrying of glass substrate can be suppressed.In addition, in semiconductor-fabricating device, when glass substrate takes off from mounting table by the state contacted with glass substrate from mounting table, can make to be difficult to when this takes off produce electrostatic.In addition, the electrostatic breakdown of the semiconductor element formed on indicating meter panel can also be suppressed.
Accompanying drawing explanation
Fig. 1 is the sectional view of the glass substrate of present embodiment.
Fig. 2 (a) illustrates the figure from the surfaceness centerplane of glass surface with the region of the protuberance of the height of more than 1nm, and (b) is the figure that Rz is described.
Fig. 3 A is an example of surface profile shape and the histogrammic figure of concave-convex surface thereof that the glass substrate using atomic force microscope measurement to obtain is shown.
Fig. 3 B illustrates in the distribution shown in Fig. 3 A, is highly the distribution of the protuberance of more than 0nm and histogrammic figure.
Fig. 3 C illustrates in the distribution shown in Fig. 3 A, is highly the distribution of the protuberance of more than 1nm and histogrammic figure.
Fig. 3 D illustrates in the distribution shown in Fig. 3 A, is highly the distribution of the protuberance of more than 1.5nm and histogrammic figure.
Fig. 4 is the figure of the example of the concave-convex surface that glass surface is shown.
Fig. 5 is the figure of the flow process of the method that the glass substrate manufacturing present embodiment is shown.
Fig. 6 is the figure of the example that the etching system used in the method shown in Fig. 5 is described.
Fig. 7 is the figure of other example that the etching system used in the method shown in Fig. 5 is described.
Fig. 8 is the figure that the electrostatic test carried out in experimental example is described.
Embodiment
Below, based on present embodiment, the manufacture method of glass substrate for display of the present invention, glass substrate and indicating meter panel are described in detail.
In the present invention, the concave-convex surface of glass surface refers to, the result obtained with noncontact mode measurement under the state after atomic force microscope (ParkSystems society manufactures, model XE-100) suitably being corrected.In addition, in the measurements, be less than the little surface of the such surfaceness of 1nm to measure arithmetic average roughness, atomic force microscope is adjusted.
As measuring condition, as follows:
Scanning area be 1 μm square,
Sweep velocity is 0.8Hz,
Servo gain is 1.5,
Be sampled as 256 point × 256 points,
Setting point is setting automatically (also can be manually setting).
Fig. 1 is the sectional view of the glass substrate 10 utilizing the manufacture method manufacture of the display glass substrate of present embodiment to obtain.
Glass substrate 10 can be used in the flat-panel monitor of panel of LCD, plasm display panel, OLED display panel etc.Glass substrate 10 also can use as the glass substrate of solar battery panel further.Such as that thickness is 0.1mm ~ 0.8mm and is of a size of the glass substrate of 550mm × 650mm ~ 2200mm × 2500mm.For glass substrate, after the manufacture of glass substrate, the major surfaces of glass substrate forms semiconductor element.The glass surface 12 of the side of glass substrate 10 is the faces (semiconductor element forming surface) forming the semiconductor elements such as TFT, is the semiconductor element forming surface (being formed with the face of low-temperature polysilicon silicon semiconductor or oxide semiconductor) forming the multilayer film such as low-temperature polysilicon film or ITO (tin indium oxide) film.TFT such as comprises the thin film transistor possessing thickness and be less than the gate insulating film of 20 μm.Towards in fine/high-resolution indicating meter panel, gate insulating film is formed as such as more than 5 μm and is less than 20 μm.In addition, possess in the TFT of the gate insulating film of such thickness, except gate insulating film, each layer being formed with semiconductor element also can be formed with the form that thickness is thinner.Therefore, for glass surface 12, Ra (arithmetic average roughness: JIS B 0601:2001) is suppressed in 0.2 (nm) below thus can form very level and smooth face.
On the other hand, in the opposite side of glass surface 12, the glass surface 14 relative with glass surface 12 is formed as roughened treated side by etching.Specifically, scattering device has the protuberance from the surfaceness centerplane of the concave-convex surface of glass surface 14 with more than 1nm height, and the area ratio that this protuberance accounts for glass surface 14 total area is 0.5% ~ 10%.It should be noted that, in present embodiment, define concave-convex surface by etch processes, but be not limited to etch processes.As long as the surface treatment of concave-convex surface can be formed.Except etch processes, surface treatment also comprises the physical grindings such as adhesive tape grinding, hairbrush grinding, abrasive grain grinding, CMP (cmp).
Fig. 2 (a) is the figure being formed at the region of the protuberance on glass surface 14 that the height from the surfaceness centerplane of glass surface 14 with more than 1nm is described in the mode of one-dimensional representation, Fig. 2 (b) is so that the figure of Rz to be described in the mode of one-dimensional representation.In Fig. 2 (a), Fig. 2 (b), show surface profile shape in the mode of one-dimensional representation, surfaceness centerplane is illustrated by mean baseline line m.
In Fig. 2 (a), show the region from the surfaceness centerplane (corresponding to mean baseline line m in figure) of glass surface with the protuberance (region of oblique line) of the height of more than 1nm with region Z.Herein, the surfaceness centerplane of glass surface refers to, to the height of each position of the above-mentioned surface profile shape being benchmark with this centerplane (two dimension surface profile shape) (Gao Shiwei just, low time be negative) be added (or integration) time, being positioned at total value (integrated value) is 0 plane highly.
In addition, in surface profile shape, by the surfaceness centerplane of the concave-convex surface on opposing glass surface 14 (being mean baseline line m in figure) peak-peak height is decided to be Rp, maximum valley depth is decided to be Rv, Rz is total value, the i.e. Rp+Rv of Rp and Rv.It should be noted that, Rz is defined within JIS B 0601:2001.
Use Fig. 3 A ~ Fig. 3 D, the measuring method of area ratio is described.
Fig. 3 A illustrates the example of surface profile shape and the histogrammic figure of concave-convex surface thereof that use above-mentioned atomic force microscope to measure 1 μm × 1 μm (256 point × 256 point) size obtained.It is highly position that the position of 0nm is the surfaceness centerplane of glass surface.Fig. 3 B ~ Fig. 3 D illustrates the distribution that the protuberance of the height from the surfaceness centerplane of glass surface with more than 0nm, more than 1nm and more than 1.5nm disperses and histogram respectively.In Fig. 3 B ~ Fig. 3 D, highly for more than 0nm protuberance, highly for more than 1.0nm protuberance, be highly that the protuberance of more than 1.5nm represents with white respectively.Height for protuberance is the area of 0nm, 1nm, more than 1.5nm, according to the histogram calculated, cuts into slices with the height of 0nm, 1nm, 1.5nm, counts to the pixel count in the image of 0nm, 1nm, more than 1.5nm the area obtaining each protuberance thus.
In the glass substrate of present embodiment, protuberance contained in all zones that the height represented with the white portion shown in Fig. 3 C is more than 1nm, glass surface 14 accounts for the area ratio of glass surface 14 all zones in the scope of 0.5% ~ 10%.From Fig. 3 D: the region that white portion is less than the protuberance of the height of 0.5%, more than 1.5nm is less.
As mentioned above, the area ratio making highly to account for glass surface 14 area for the protuberance of more than 1nm is 0.5% ~ 1% is based on following reason.The movement of electric charge it is said that distance (distance such as between the supporter such as glass substrate and mounting table) between object and object is for below a certain degree, such as below 1nm, produce for about 0.2nm ~ 0.8nm further.
Therefore, the present inventor is conceived to the protuberance from the surfaceness centerplane of the concave-convex surface of glass surface 14 with the height of more than 1nm.Now, found do not producing in electrostatic, the area ratio making the protuberance of the height with more than 1nm account for glass surface 14 area is more than 0.5% is effective.It is believed that, when area ratio is less than 0.5%, when glass substrate is placed in mounting table or when glass substrate being adsorbed after placing, between peripheral part and the surface of mounting table of the protuberance of the concave-convex surface of glass substrate, protuberance cannot support glass substrate, fully cannot keep the distance on the surface of glass substrate and mounting table, thus cause electrostatic.On the other hand, when area ratio is more than 10%, the area of the contact part between raised part and mounting table increases, and therefore maximum electrostatic amount increases.In addition, when carrying out etching according to the mode of area ratio more than 10%, be difficult to according to target adjust the concave-convex surface of glass surface 14, cannot surface quality be guaranteed, glass surface 14 easily forms flaw defect.Such as, potential slight flaws may increase due to surface treatment, forms flaw defect.Therefore, above-mentioned area ratio is 0.5% ~ 10%, and preferred above-mentioned area ratio is 0.75% ~ 7.0%, is more preferably 1.2% ~ 4.0%.
On the other hand, in suppression electrostatic, preferred Rz is more than 2nm.In suppression electrostatic, more preferably Rz is more than 3nm.But if Rz exceedes prescribed value, then the face intensity of glass surface declines to a great extent, and then concave-convex surface increases thus causes easily producing above-mentioned flaw defect.
In glass substrate in the past, make Ra be 0.3nm ~ 1.5nm to suppress to peel off electrostatic, even if make this Ra be 0.3nm ~ 1.5nm, in present embodiment, raised part accounts for the area ratio of glass surface area also cannot be 0.5% ~ 10%.In addition, even if above-mentioned area ratio is 0.5% ~ 10%, Ra also may not be 0.3nm ~ 1.5nm.That is, Ra and above-mentioned area ratio are the parameters that it doesn't matter mutually.
In present embodiment, such as, in order to suppress electrostatic or its static content of glass substrate 10, make on glass surface 14 highly for the area ratio of the protuberance of more than 1nm is 0.5% ~ 10%.Therefore, glass surface 14 forms concave-convex surface in a large number by roughened process.Therefore, think that the Ra of glass surface 14 generally can increase because of roughened process when suppressing electrostatic or the static content of glass substrate 10.But this Ra significantly can change because of the distribution of the protuberance of concave-convex surface that formed on glass surface 14.Such as, Fig. 4 (a), 2 examples shown in (b) that the maximum height (the maximum projecting height from surrounding recess) of protuberance is identical are assumed to be.Example shown in Fig. 4 (a) be the height of most protuberance roughly unified be lower height, the protuberance that the height of the protuberance of a few part compares surrounding gives prominence to such example.Example shown in Fig. 4 (b) is the almost consistent example of height substantially all in the protuberance of more than 2.Now, arithmetic average roughness Ra is Ra
2> Ra
1.Further, compare the example shown in Fig. 4 (b), in the example shown in Fig. 4 (a), the area that protuberance contacts with mounting table is less, and the example therefore shown in Fig. 4 (a) can suppress electrostatic or the static content of glass substrate 10 significantly.Therefore, the example according to Fig. 4 (a), Fig. 4 (b), in order to suppress electrostatic or static content, preferably makes the Ra of glass surface 14 less.This point makes the Ra of glass surface 14 increase so general idea contradiction with in order to suppress electrostatic or static content.
So, Ra is insufficient as the index of the electrostatic or static content for suppressing glass substrate 10.Consider this point, the mode being 0.5% ~ 10% according to the area ratio highly for the protuberance of more than 1nm on glass surface 14 in present embodiment carries out the roughened process of glass surface 14.
In the glass substrate 10 of present embodiment, the electrostatic of glass substrate or its static content are inhibited, therefore, it is possible to suitably for using semiconductor-fabricating device to carry out the glass substrate of the process such as film forming, in addition, also can suitably for expecting the colored filter formation glass substrate of non-cohesive dust or dust and dirt on the glass substrate.
In addition, the glass substrate 10 of present embodiment can possess thickness and is less than the glass substrate of the TFT of the gate insulating film of 20 μm and preferably uses as being formed on above-mentioned glass surface 12.In recent years, in fine/high resolution display panel, based on insulating film, the thickness of each layer contained in semiconductor element is thinning.In this context, can enumerate and narrow in order to respective pixel spacing or accelerate to show the requirement switched, require to make gate insulating film thinning.In addition, from the view point of the power saving in order to indicating meter panel, grid voltage is diminished, also require to make the thickness of gate insulating film thinning.As an example of the filming in fine/resolution panels, carrying out making the thickness of gate insulating film be less than the research of 20nm.For the thickness of gate insulating film, be about 70nm ~ 100nm in the past, but be formed with 50nm in recent years, be formed with the thickness that 20nm is so further.It is because improve the film quality of gate insulating film that gate insulating film can be made so thinning, can thickness be made thinning according to above-mentioned requirements thus.Such as, but on the other hand, the electrostatic due to glass substrate can produce the such problem of the electrostatic breakdown of semiconductor element, discharges, makes gate insulating film sustain damage in gate insulating film.Therefore, as the formation of the glass substrate having such gate insulating film to be less than the indicating meter panel of the TFT of 20 μm, use and the glass substrate of electrostatic or static content can be suppressed as above to be effective especially.
(indicating meter panel)
The major surfaces of such glass substrate 10 forms semiconductor element, thus making obtains indicating meter panel.
Specifically, the glass substrate 10 of indicating meter panel has the 1st major surfaces and the 2nd major surfaces.
1st major surfaces is the above-mentioned glass surface 14 that scattering device has the protuberance of the height from the surfaceness centerplane of concave-convex surface with more than 1nm, and the area ratio that raised part accounts for glass surface 14 area is 0.5% ~ 10%.
2nd major surfaces is the face with the 1st major surfaces (glass surface 14) opposite side, and the 2nd major surfaces is above-mentioned glass surface 12, and is formed with semiconductor element.Such as, the 2nd major surfaces is formed the conductor thin film of the patterning such as electrode, wiring pattern or semiconductor element.That is, for the 2nd major surfaces, except forming electrode conductor thin film or being formed except semiconductor film, also through forming the photoetch operations such as etchant resist, etching, resist stripping, thus indicating meter panel is formed.In such indicating meter panel, when panel manufacturing process, electrostatic or the static content of glass substrate 10 are inhibited, therefore, it is possible to suppress the electrostatic breakdown of semiconductor element.
Particularly compared with in the past formed amorphous silicon semiconductor, when forming low-temperature polysilicon silicon semiconductor or oxide semiconductor on the glass substrate 10, the lower thickness of semiconductor element, and the width of the wiring to be connected with semiconductor element and intervals narrow, intervals such as narrows to 1.5 μm ~ about 3 μm from 5 μm.Therefore, prevent the requirement of the destruction caused because of electrostatic higher than ever.Therefore, when forming low-temperature polysilicon silicon semiconductor or oxide semiconductor on the glass substrate 10, the effect of the glass substrate 10 of electrostatic or static content can be suppressed large.
In addition, glass substrate 10 is suitably for the formation of there being the indicating meter panel possessing above-mentioned thickness and be less than the TFT of the gate insulating film of 20 μm.Electric discharge easily occurs the gate insulating film that such thickness is little easily damages, but electrostatic and its static content by using glass substrate 10 can suppress glass substrate, therefore effectively can suppress the electrostatic breakdown of such TFT.Therefore the filming that can realize gate insulating film etc., the fine/high resolution display panel that simultaneously can suppress the problem caused because of electrostatic is obtained.
(glass composition)
As the composition of the glass of glass substrate 10, with the glass containing following composition for example.
(a) SiO
2: 50 quality % ~ 70 quality %,
(b) B
2o
3: 5 quality % ~ 18 quality %,
(c) Al
2o
3: 10 quality % ~ 25 quality %,
(d) MgO:0 quality % ~ 10 quality %,
(e) CaO:0 quality % ~ 20 quality %,
(f) SrO:0 quality % ~ 20 quality %,
(o) BaO:0 quality % ~ 10 quality %,
(p) RO:5 quality % ~ 20 quality % (wherein, R is at least a kind of being selected from Mg, Ca, Sr and Ba)
(q) R '
2o:0 quality % ~ 2.0 quality % (wherein, R ' is at least a kind of being selected from Li, Na and K)
R () is selected from the metal oxide of at least a kind in stannic oxide, ferric oxide and cerium oxide: add up to 0.05 quality % ~ 1.5 quality %.
Such glass substrate 10 can use glass tube down-drawing, float glass process etc. to manufacture.In the following description, the manufacture method employing glass tube down-drawing is described.Fig. 5 is the figure of an example of the flow process of the manufacture method of the glass substrate 10 that present embodiment is described.The manufacture method of glass substrate for display mainly has: melt operation (step S10), clarification operation (step S20), agitating procedure (step S30), molding procedure (step S40), Slow cooling operation (step S50), take substrate operation (step S60), cut off operation (step S70), roughened treatment process (step S80) and end face manufacturing procedure (step S90).By above-mentioned melting operation (step S10), clarification operation (step S20), agitating procedure (step S30), molding procedure (step S40), Slow cooling operation (step S50), take substrate operation (step S60) and cut off operation (step S70), making the glass substrate 10 obtaining having the face being formed with semiconductor element.By roughened treatment process carried out afterwards, in the major surfaces of glass substrate 10 be formed semiconductor element face opposite side glass surface 14 on form concave-convex surface.
Melt operation (step ST10) to carry out in calciner.In calciner, liquid level frit being fed into the melten glass be accumulated in calciner carries out heating to make melten glass.Further, melten glass is made to flow to lower procedure from the spout of 1 bottom of the inside side walls being arranged on calciner.
Except the method that the heating of the melten glass of calciner is carried out spontaneous heating to heat except being energized at melten glass self, burner can also be utilized secondarily to provide flame to melt frit.It should be noted that, in frit, be added with finings.Be not particularly limited as finings, there will be a known SnO
2, As
2o
3, Sb
2o
3deng.But, from the view point of reduction carrying capacity of environment, preferably use SnO
2(stannic oxide) is as finings.
Clarification operation (step ST20) is at least carried out in finer.In clarification operation, the melten glass in finer is heated up, containedly in melten glass thus contain O
2, CO
2or SO
2bubble absorb the O generated due to the reduction reaction of finings
2and grow up, bubble floating to melten glass liquid level thus release.Further, in clarification operation, the temperature of melten glass is declined, makes the reducing substance obtained by the reduction reaction of finings carry out oxidizing reaction thus.Thus, the O in remaining in melten glass bubble
2again be absorbed in melten glass etc. gaseous constituent, bubble collapse.Can be undertaken by the temperature controlling melten glass based on the oxidizing reaction of finings and reduction reaction.It should be noted that, clarification operation can use vacuum deaerator mode, and this vacuum deaerator mode is the space forming reduced atmosphere in finer, and the bubble be present in melten glass is grown up thus deaeration in reduced atmosphere.
Then, agitating procedure (step S30) is carried out.In agitating procedure, in order to the homogeneity of the chemical aspect and hot aspect that keep glass, make the not shown steel basin that melten glass passes through towards vertical direction.While utilize the agitator be arranged in steel basin to stir melten glass, make it move to bottom to vertical lower, be directed into rear operation.The ununiformity of the glass such as brush line can be suppressed thus.
Then, molding procedure (step S40) is carried out.Glass tube down-drawing is used in molding procedure.Glass tube down-drawing is the use of the well-known method of such as Japanese Unexamined Patent Publication 2010-189220 publication, Japanese Patent No. 3586142 publication.Thus, shapingly the foliated glass with specific thickness, fabric width is obtained.As forming method, most preferably overflow downdraw in glass tube down-drawing, but also can be salivation glass tube down-drawing.
Then, Slow cooling operation (step S50) is carried out.Specifically, to the foliated glass after shaping, according to not producing strain and bending mode carrys out controlled cooling model speed, thus make it in not shown Slow cooling stove, be cooled to below Slow cooling point.
Then, carry out taking substrate operation (step S60).Specifically, the foliated glass generated continuously is taked according to the mode of each constant length, obtains glass substrate.Afterwards, in cut-out operation (step S70), by the size of regulation, glass substrate is cut off.
Then, roughened process (step S80) is carried out.Specifically, surface cleaning processing is implemented to glass substrate, implements etch processes afterwards.
In surface cleaning processing, such as, employ not shown atmospheric pressure plasma cleaning processing apparatus; In etch processes, employ the etching system adopting atmospheric pressure plasma.
In atmospheric pressure plasma cleaning processing apparatus, such as, from the nozzle of the slit-shaped that the whole width at glass substrate 10 extends, the glass surface 14 (face contacted with transport roller) to the glass substrate 10 carried by transport roller is blown and attachedly employs N
2, O
2the gas of plasmoid.
Atmospheric pressure plasma cleaning processing apparatus has: N
2, O
2supply road; Be arranged on the electrode in opposite directions of 1 couple of the both sides in supply road; Cover the dielectric medium on this pair electrode surface separately in opposite directions, the end on above-mentioned supply road is plasma irradiating mouth and towards glass substrate 10.
Blow the gas (free radical) of the attached sensitization because of plasma body like this to glass surface 14, the film oxidation that is made up of the unwanted organism be attached on glass surface 14 can be made thus and remove.Removing the film be made up of organism is in order to the film be made up of organism can not be made in etch processes described later to play function as mask.
Therefore, eliminate organism by the glass surface 14 of plasma clean thus present wetting ability.Now the water contact angle of glass surface 14 is preferably less than 10 degree, is more preferably less than 5 degree.Such optimal way can be reached based on the scavenging period of the gas of sensitization or the flow of gas by adjustment.That is, as the condition of surface cleaning, the flow of the gas of preferably adjustment scavenging period and sensitization, makes water contact angle be more than 10 degree thus.
It should be noted that, except using the cleaning of atmospheric pressure plasma, also can remove organic film by the attached or ultraviolet irradiation of blowing carrying out ozone gas.As long as can at least make oxidation operation or make organic modified film then remove.In addition, also can be cleaned by the coating or dip treating that can remove organic scavenging solution.But in order to effectively carry out dry etching described later, the attached or ultraviolet irradiation of blowing preferably by ozone gas cleans.
Fig. 6 is the figure of the example that the etching system employing atmospheric pressure plasma is shown.
The etching system 30 employing atmospheric pressure plasma has etching head 34 and not shown gas exhaust unit.In etching system 30, for the glass surface 14 (face contacted with transport roller 32) of the side of the glass substrate carried by transport roller 32, blow attached etching gas from the nozzle of the slit-shaped extended at the whole width of glass substrate 10 of etching head 34 to glass surface.Etching gas has by making CF
4and H
2the mixed gas of O is plasmoid thus the gas of the HF composition of the sensitization generated.Thus, glass surface is roughened by etching gas.
It should be noted that, the surfaceness centerplane of the concave-convex surface after scattering device has self etching process on the glass surface 14 of glass substrate 10 works the protuberance of the height with more than 1nm.The area ratio accounting for the total area of glass surface 14 according to this protuberance be 0.5% ~ 10% mode carry out above-mentioned etch processes.Specifically, the condition (condition of surface cleaning and etching condition) of roughened process is set.Such as, in etching condition, by adjusting the treatment time of etching to the transporting velocity adjustment of glass substrate 10 or adjusting blowing the flow of the etching gas being attached to glass surface 14, the kind of gas and concentration.
It should be noted that, the engraving method for roughened process is not limited to be the dry etching using etching gas, also can use the wet etching of glass surface etching solution being coated on roughened process.Fig. 7 illustrates to employ etching solution MS carries out the method for roughened process figure to glass surface.
Etching solution MS is stored in container 28.Between glass substrate 10 and container 28, contact with etching solution MS according to glass surface 14 and the mode be handled upside down to arrange transport roller 22 and to carry coating roll 24.The peripheral surface of carrying coating roll 24 is made up of sponge material.In addition, a part of carrying the peripheral surface of coating roll 24 is immersed in etching solution MS.Therefore, the surface of carrying coating roll 24 is absorbed with etching solution MS.The etching solution MS be absorbed on carrying coating roll 24 contacts with the glass surface 14 of glass substrate 10 thus etching solution MS is coated on glass surface 14.Now, in order to adjust the glue spread of coating etching solution MS on the glass substrate 10, the touch roll 26 rotated by extruding extrudes the part of the etching solution MS be absorbed on carrying coating roll 24.That is, the touch roll 26 that the surface of carrying coating roll 24 is extruded is provided with in device.It should be noted that, when carrying out the roughened process employing etching solution MS, except adjusting except glue spread like this, also can adjust the concentration of the fluoric acid for etching solution MS and etching period.Such as, use the fluoric acid that the such concentration of 4000ppm ~ 5000ppm is higher, and glue spread and etching period are adjusted, thus also can turn to desired shape by asperities.
In device shown in Fig. 7, extruded the degree on the surface of carrying coating roll 24 by adjustment touch roll 26, the glue spread of the etching solution MS be coated on glass surface 14 can be adjusted thus.Namely, on glass surface 14 after etch processes, there is the protuberance of the height from the surfaceness centerplane of concave-convex surface with more than 1nm according to scattering device and the mode that the area ratio that this protuberance accounts for glass surface area is 0.5% ~ 10% adjusts the condition of etch processes.Water etc. is utilized to carry out rinsing process to the glass substrate 10 having carried out etch processes based on coating etching solution MS.
Thus, roughened treatment process is carried out by dry etching or wet etching.Also the physical grindings such as adhesive tape grinding, hairbrush grinding, abrasive grain grinding, CMP (cmp) can be carried out to replace dry etching or wet etching.
Afterwards, end face manufacturing procedure (step S90) is carried out.In end face manufacturing procedure, carry out the grinding of glass surface and end face, grinding.Such as diamond wheel or resin wheel etc. is employed in end face processing.
In addition, the manufacture method of glass substrate for display also has matting and checks operation, but the explanation of these operations is omitted herein.
The glass substrate 10 obtained thus is carried to panel manufacturers, at panel manufacturers place, the formation of electrode conductor thin film or the formation of semiconductor film are carried out to the major surfaces defining glass surface 12 of glass substrate 10, in addition, through the photoetch operation such as formation, etching, resist stripping of etchant resist, thus form electrode, wiring or semiconductor element etc., make and obtain indicating meter panel.It should be noted that, on the glass surface 12 of glass substrate 10, except formation semiconductor element etc., colored filter containing black matrix" or RGB pattern can also be formed by photoetch operation.
As previously discussed, there is according to scattering device the surfaceness centerplane of the concave-convex surface of the glass surface 14 of self etching process to work the protuberance of the height with more than 1nm and the area ratio that this protuberance the accounts for glass surface area mode that is 0.5% ~ 10%, is preferably 0.75% ~ 7.0%, is more preferably 1.2% ~ 4.0%, etch processes is carried out for glass substrate 10.Thus, even if when taking off glass substrate after the mounting table of semiconductor-fabricating device etc. contacts with glass substrate, when being also difficult in this contact or taking off, electrostatic is produced.
Particularly be difficult to produce in electrostatic, the concavo-convex Rz (Rz is the maximum height being measured the concave-convex surface obtained by atomic force microscope) of preferred surface is more than 2 (nm).
[embodiment]
In order to investigate the effect of present embodiment, make the liquid crystal indicator glass substrate employing Boroalumino silicate glasses.
(roughened process)
Above-mentioned atmospheric pressure plasma cleaning is carried out to the glass substrate made.That is, the N of plasmoid is made
2, O
2mixed gas flow to the whole width of glass substrate with the amount that per minute specifies, the glass surface of glass substrate is cleaned.
Further, the etching system 30 shown in Fig. 6 is used to etch.In etching system 30, make the etching gas HF of free radical flow to the whole width of glass substrate, thus etch, described etching gas HF makes CF
4, H
2obtain in the plasma body that the mixed gas of O generates by using rare gas etc.
Test portion 1 ~ 8 shown in following table 1 is to CF
4, H
2the feed rate of O and join CF
4, H
2kind (the N of the vector gas in the mixed gas of O
2or Ar gas) carry out various change, thus the form of the concave-convex surface formed by roughened process is carried out to the example of various change.Test portion 0 is the example of not carrying out dry etching completely.
[concave-convex surface]
About the concave-convex surface of the glass surface 14 of glass substrate 10, test portion (long 50mm, wide 50mm) is cut out from the glass substrate 10 made, atomic force microscope (ParkSystems company manufactures, model XE-100) is used to measure test portion respectively with noncontact mode.Before measurement, in order to the concave-convex surface being less than the such surfaceness of 1nm little to arithmetic average roughness Ra is measured, device is adjusted.During measurement, making scanning area be 1 μm × 1 μm (number of samples is 256 point × 256 points), sweep velocity is 0.8Hz.In addition, the servo gain of the noncontact mode of this atomic force microscope is made to be 1.5.Setting point is setting automatically.The two dimensional surface profile shape about concave-convex surface is obtained by this measurement.The histogram of concave-convex surface is obtained by this surface profile shape, cut into slices with the height that the height from surfaceness centerplane is 1nm, to highly for the pixel count in the image of more than 1nm counts thus obtains the area of protuberance, obtain the area ratio (%) of protuberance thus.Obtained Rz (nm) simultaneously.
[electrostatic evaluation]
730mm × 920mm size is employed and thickness is the glass substrate 10 of 0.5mm in the electrostatic evaluation of glass substrate.Utilizing from being placed on Substrate table 40 by glass substrate 10 as shown in Figure 8 the state that lifter pin 42 supports, the mounting surface of lifter pin 42 opposing substrate platform 40 being declined, makes glass substrate 10 decline thus thus be placed on Substrate table 40.Substrate table has and carries out the surface after anodic oxidation treatment (alumite) to the platform of aluminum.
Further, after utilizing not shown suction device to be attracted from the suction port of the mounting surface being arranged on Substrate table 40 by glass substrate 10 with 50kPa, stop attracting, make lifter pin 42 increase.Stop with the decline of such glass substrate 10, attraction, attraction, rise to 1 circulation, repeatedly carried out repeatedly circulating until static content is saturated.1 circulation is 10 seconds.In addition, to each circulation measurement of electrostatic amount.The measurement of static content is replaced by the electromotive force of the glass surface measuring glass central part.Measurement employs surface potential meter (ZJ-SD that Omron (OMRON) society manufactures).The rational height of surface potential meter is 10mm.Static measuring environment is to be expressed as 23.5 DEG C, 74% ~ 75% based on the measured value of Hygrothermograph.The maximum electrical potential and charged speed that represent maximum electrostatic amount is obtained by this measuring result.Mensuration measures the electromotive force in the face of glass substrate and Substrate table side opposite side.
Maximum electrical potential repeated multiple timesly carries out the current potential of above-mentioned circulation when the static content of glass substrate 10 is saturated till state of saturation.Charged speed is the number of times of absolute value more than the circulation till 100V of electromotive force.It should be noted that, the electromotive force measuring the surface of the glass substrate of side is negative value.Use absolute value in table 1 to represent.
Make the protuberance of the height (height from the surfaceness centerplane of concave-convex surface) with more than 1nm formed by etch processes account for the area ratio of the total area of glass surface 14 and Rz when changing, the evaluation result of charged speed now and maximum electrical potential is shown in following table 1.
[table 1]
It should be noted that, the arithmetic average roughness Ra of test portion 1,2 is 0.3nm ~ 1.5nm, but as shown in table 1, and area ratio is not in the scope of 0.5% ~ 10%.
Evaluation result from table 1: (charged speed is low for charged speed (number of times) test portion more than 10 times, situation for allowing), and the test portion that the absolute value of maximum electrical potential is less than 17kV is test portion 3 ~ 8, area ratio is 0.5% ~ 10%.
Further, when known area ratio is 0.75% ~ 7.0%, maximum electrical potential, lower than 16.2kV (static content is the condition of allowed band), is difficult to the problem producing electrostatic.Area ratio is included in the maximum electrical potential of the test portion 5 ~ 7 of the scope of 1.2% ~ 4.0% lower than 16kV, and charged speed is also low, more preferred in this.That is, more preferably the area ratio of protuberance is 1.2% ~ 4.0%.
Above, the manufacture method of glass substrate for display of the present invention and glass substrate, indicating meter panel have been described in detail, but the present invention is not limited to above-mentioned embodiment, in the scope not departing from juche idea of the present invention, can carry out various improvement and change, this is from need not.
Particularly for the glass substrate that the such as oxide semiconductor towards fine/high resolution display together used with live width and the narrow wiring pattern of spacing or low-temperature polysilicon silicon semiconductor are formed, manage according to use above-mentioned parameter in the past, cannot the quality requirements of these glass substrates fully corresponding.According to the present invention, even the narrow and small defect of the live width of cloth line electrode that can be formed on the glass substrate can not be allowed to towards in the glass substrate of fine/high resolution display, suppress the problem of electrostatic.
In addition, the problem produced due to electric discharge can not only be eliminated, also can by reduce impurity because of electrostatic, the amount of adhering on the glass substrate improves the yield rate of the Cu system electrode wiring low with the adaptation of glass.That is, the glass substrate of the application of the invention, even if when online width is narrow, also can use the wiring/electrode materials low with the adaptation of glass.Such as, can use the Cu system electrode materialss such as Ti-Cu alloy, Cu system electrode materials adaptations compared with Al system electrode or Cr, Mo electrode etc. such as this Ti-Cu alloy are low, but resistance is low.So, the range of choice of electrode materials expands, and can eliminate the problem postponing (wiring delay) at the RC easily becoming problem in the larger panel of televisor etc. thus.In addition, be envisioned that small panel towards mobile phone terminal is from now on can further high-precision refinement, and the present invention can provide the glass substrate can eliminating the problem that the RC that produces in the small panel of such mobile phone terminal postpones.
In addition, in above-mentioned explanation, use and be provided with the glass substrate of semiconductor element as device, the problem of electrostatic is illustrated, even if but the present invention as being also effective towards being formed with colored filter etc. as the electrostatic solution of the glass substrate of the indicating meter of device.Such as, in colored filter (CF) panel, the graph thinning of black matrix" (BM) develops, according to the present invention, even the BM live width of the CF panel of liquid-crystal display be less than 20 μm, the liquid crystal panel of such as graph thinning to 5 μm ~ 10 μm also can not produce the BM caused due to impurity and peel off.
The explanation of symbol
10 glass substrates
12,14 glass surfaces
22 transport rollers
24 carrying coating rolls
26 touch rolls
28 containers
30 etching systems
34 etching head
40 Substrate tables
42 lifter pins
Claims (11)
1. a glass substrate, it is the glass substrate be made up of Boroalumino silicate glasses, it is characterized in that,
Side in the major surfaces of described glass substrate is roughened treated side,
Described roughened treated side is face as described below: when using the concave-convex surface of atomic force microscope to described roughened treated side to measure, in the region of 1 μm × 1 μm of described roughened treated side, the area ratio of protuberance shared by the area in the region of described 1 μm × 1 μm from the surfaceness centerplane of concave-convex surface with the height of more than 1nm is 1.2% ~ 4.0%
In the major surfaces of described glass substrate, use as device side with the glass surface of the opposite side of described roughened treated side opposition side.
2. glass substrate as claimed in claim 1, wherein, in the region of 1 μm × 1 μm of described roughened treated side, the area ratio of protuberance shared by the area in the region of described 1 μm × 1 μm from described surfaceness centerplane with the height of more than 1.5nm is less than 0.5%.
3. glass substrate as claimed in claim 1 or 2, wherein, in the glass composition of described glass substrate, R '
2the containing ratio of O is 0 quality % ~ 2.0 quality %, R ' is at least a kind of being selected from Li, Na and K, and the containing ratio of RO is 5 quality % ~ 20 quality %, R is at least a kind of being selected from Mg, Ca, Sr and Ba.
4. glass substrate as claimed in claim 1 or 2, wherein, the Rz of described concave-convex surface is more than 2nm, below 4.79nm, and this Rz is the maximum height being measured the concave-convex surface obtained by atomic force microscope.
5. a manufacture method for indicating meter panel, it is by the manufacture method of the indicating meter panel glass substrate that boroaluminosilicate is formed being formed with semiconductor element, it is characterized in that,
Described glass substrate has:
1st major surfaces, it is provided with the protuberance of the height from the surfaceness centerplane of concave-convex surface with more than 1nm; With
2nd major surfaces of described glass substrate, it is positioned at the opposition side of described 1st major surfaces, and is formed with semiconductor element,
Described 1st major surfaces is face as described below: when using the concave-convex surface of atomic force microscope to described 1st major surfaces to measure, in the region of 1 μm × 1 μm of described 1st major surfaces, the area ratio of protuberance shared by the area in the region of described 1 μm × 1 μm from the surfaceness centerplane of concave-convex surface with the height of more than 1nm is 1.2% ~ 4.0%
Described 2nd major surfaces of described glass substrate is formed with Cu system electrode materials.
6. a manufacture method for glass substrate for display, it is the manufacture method of the glass substrate for display be made up of Boroalumino silicate glasses, and the feature of this manufacture method is, it has:
Make the operation of glass substrate; With
Surface treatment is carried out to the glass surface of the side in the major surfaces of described glass substrate thus the operation of formation concave-convex surface,
The operation of described formation concave-convex surface comprises the etch processes removing organic surface cleaning processing from described glass surface and etch the described glass surface after cleaning,
For the glass surface of the described glass substrate be handled upside down, whole width carries out described surface cleaning processing, thus from described glass surface removing organism,
When the described glass surface being formed with concave-convex surface being measured according to use atomic force microscope, describedly to be formed in the region of 1 μm × 1 μm of the glass surface of concave-convex surface, have from the surfaceness centerplane of concave-convex surface the protuberance of the height of more than 1nm area ratio shared in the area in the region of described 1 μm × 1 μm be 0.5% ~ 10% mode carry out described surface treatment.
7. a manufacture method for glass substrate for display, it is the manufacture method of the glass substrate for display be made up of Boroalumino silicate glasses, and the feature of this manufacture method is, it has:
Make the operation of glass substrate; With
Surface treatment is carried out to the glass surface of the side in the major surfaces of described glass substrate thus the operation of formation concave-convex surface,
The operation of described formation concave-convex surface comprises the etch processes removing organic surface cleaning processing from described glass surface and etch the described glass surface after cleaning,
For the glass surface of the described glass substrate be handled upside down, whole width carries out described etch processes, thus described glass surface is etched,
When the described glass surface being formed with concave-convex surface being measured according to use atomic force microscope, describedly to be formed in the region of 1 μm × 1 μm of the glass surface of concave-convex surface, have from the surfaceness centerplane of concave-convex surface the protuberance of the height of more than 1nm area ratio shared in the area in the region of described 1 μm × 1 μm be 0.5% ~ 10% mode carry out described surface treatment.
8. the manufacture method of glass substrate for display as claimed in claims 6 or 7, wherein, be formed in the region of 1 μm × 1 μm of the glass surface of concave-convex surface according to described, the mode that the area ratio shared in the area in the region of described 1 μm × 1 μm of the protuberance from described surfaceness centerplane with the height of more than 1.5nm is less than 0.5% carries out described surface treatment.
9. the manufacture method of glass substrate for display as claimed in claims 6 or 7, wherein, the mode being less than 5 degree according to the water contact angle of the described glass surface after cleaning carries out described surface cleaning processing.
10. the manufacture method of glass substrate for display as claimed in claims 6 or 7, wherein, described etch processes etching solution is coated on the wet etching that described glass surface carries out.
The manufacture method of 11. glass substrate for display according to any one of claim 5 ~ 7, wherein, in the glass composition of described glass substrate, R '
2the containing ratio of O is 0 quality % ~ 2.0 quality %, R ' is at least a kind of being selected from Li, Na and K, and the containing ratio of RO is 5 quality % ~ 20 quality %, R is at least a kind of being selected from Mg, Ca, Sr and Ba.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012093557 | 2012-04-17 | ||
| JPJP2012-093557 | 2012-04-17 | ||
| KR10-2012-0121948 | 2012-10-31 | ||
| KR1020120121948A KR101522452B1 (en) | 2012-04-17 | 2012-10-31 | Method for making glass substrate for display, glass substrate and display panel |
| CN201310062080.9A CN103373818B (en) | 2012-04-17 | 2013-02-27 | Manufacturing method of glass substrate for display, glass substrate, and panel for display |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310062080.9A Division CN103373818B (en) | 2012-04-17 | 2013-02-27 | Manufacturing method of glass substrate for display, glass substrate, and panel for display |
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| CN104803607A true CN104803607A (en) | 2015-07-29 |
| CN104803607B CN104803607B (en) | 2018-11-02 |
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| CN201510146589.0A Active CN104803607B (en) | 2012-04-17 | 2013-02-27 | Glass substrate for display and its manufacturing method |
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| Country | Link |
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| JP (3) | JP5559378B2 (en) |
| KR (2) | KR101522452B1 (en) |
| CN (1) | CN104803607B (en) |
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| CN106795042A (en) * | 2015-03-24 | 2017-05-31 | 安瀚视特控股株式会社 | The manufacture method of glass substrate |
| CN109265013A (en) * | 2018-10-16 | 2019-01-25 | 彩虹（合肥）液晶玻璃有限公司 | Etaching device and cleaning equipment |
| TWI731167B (en) * | 2016-09-21 | 2021-06-21 | 日商Ａｇｃ股份有限公司 | glass plate |
| TWI741032B (en) * | 2016-09-21 | 2021-10-01 | 日商Ａｇｃ股份有限公司 | Manufacturing method of glass plate and glass substrate |
| CN116615396A (en) * | 2020-11-06 | 2023-08-18 | 康宁公司 | Substrate with improved electrostatic properties |
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-
2012
- 2012-10-31 KR KR1020120121948A patent/KR101522452B1/en active Active
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- 2013-03-25 JP JP2013061800A patent/JP5559378B2/en not_active Expired - Fee Related
-
2014
- 2014-03-28 JP JP2014067709A patent/JP5813813B2/en not_active Expired - Fee Related
- 2014-10-27 KR KR1020140146071A patent/KR101838339B1/en not_active Expired - Fee Related
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2015
- 2015-03-13 JP JP2015050646A patent/JP5961719B2/en not_active Expired - Fee Related
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| US5618448A (en) * | 1992-09-02 | 1997-04-08 | Mitsubishi Kasei Corporation | Glass substrate having surface protrusions for use as a magnetic disc substrate |
| JP2005255478A (en) * | 2004-03-12 | 2005-09-22 | Nippon Electric Glass Co Ltd | Glass substrate |
| CN101382414A (en) * | 2007-09-06 | 2009-03-11 | 欧姆龙株式会社 | Substrate holding device and substrate separation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106795042A (en) * | 2015-03-24 | 2017-05-31 | 安瀚视特控股株式会社 | The manufacture method of glass substrate |
| TWI731167B (en) * | 2016-09-21 | 2021-06-21 | 日商Ａｇｃ股份有限公司 | glass plate |
| TWI741032B (en) * | 2016-09-21 | 2021-10-01 | 日商Ａｇｃ股份有限公司 | Manufacturing method of glass plate and glass substrate |
| CN109265013A (en) * | 2018-10-16 | 2019-01-25 | 彩虹（合肥）液晶玻璃有限公司 | Etaching device and cleaning equipment |
| CN116615396A (en) * | 2020-11-06 | 2023-08-18 | 康宁公司 | Substrate with improved electrostatic properties |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014169224A (en) | 2014-09-18 |
| KR20140133797A (en) | 2014-11-20 |
| JP2013237604A (en) | 2013-11-28 |
| KR101838339B1 (en) | 2018-03-13 |
| KR101522452B1 (en) | 2015-05-21 |
| JP5559378B2 (en) | 2014-07-23 |
| JP5813813B2 (en) | 2015-11-17 |
| JP5961719B2 (en) | 2016-08-02 |
| KR20130117632A (en) | 2013-10-28 |
| JP2015157751A (en) | 2015-09-03 |
| CN104803607B (en) | 2018-11-02 |
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