CN104752953B - A kind of GaAs base PHEMTs vertical cavity surface emitting laser - Google Patents

Abstract

A GaAs-based PHEMT vertical cavity surface-emitting laser, the laser is composed of a GaAs-based PHEMT and a VCSEL, the GaAs-based PHEMT and the VCSEL are separated by an etching stop layer InGaP; the GaAs-based PHEMT is formed on a GaAs substrate The first buffer layer GaAs grown by molecular beam epitaxy on the top, fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layer, the channel lower barrier layer Al _0.22 Ga _0.78 As, the channel layer In _0.2 Gao _0.8 As , a space isolation layer Al _0.22 Ga _0.78 As, a planar doped layer, a barrier layer Al _0.22 Ga _0.78 As, and an N-type highly doped capping layer GaAs; The second GaAs buffer layer, the Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As N-type lower distributed Bragg mirror layer with an optical thickness of 34.5 to λ ₀ /4, the Al _0.2 Ga _0.8 As/GaAs active layer, and 3 pairs of λ ₀ /4 optical thickness of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg mirror layer, Al _0.98 Ga _0.02 As oxidation confinement layer, 21.5 to λ ₀ /4 optical thickness of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector layer, GaAs cap layer.

Description

A GaAs-Based PHEMT Vertical Cavity Surface Emitting Laser

technical field

The invention relates to the technical field of compound semiconductor materials and devices, in particular to a structure of a monolithic gallium arsenide (GaAs)-based pseudomorphic high electron mobility transistor (PHEMT) vertical cavity surface emitting laser (VCSEL).

Background technique

Pseudomorphic high electron mobility transistor (PHEMT) has the characteristics of high frequency, high speed, high power gain and low noise figure, and is widely used in military, space and civilian communication fields, such as millimeter wave radar, electronic warfare, intelligent equipment, satellite communication and radiation astronomy. PHEMT devices are mostly used in the driving circuit of lasers in the field of high-speed optical communication.

In the above-mentioned transistor laser structure, the laser output mode is edge emission, and the vertical cavity surface emitting laser is a new type of light source that has been widely used in recent years. Threshold (submilliampere level) lasing; (2) The resonant cavity is relatively short, so the longitudinal mode interval is large, and the dynamic modulation frequency is high; (3) The cross section of the active area is circularly symmetrical, the beam directionality is good, and it is easy to couple ; (4) The light output direction is perpendicular to the substrate plane, which is suitable for parallel optical interconnection and information processing; (5) The device is small in size and can form a two-dimensional array laser with high density; (6) The monolithic epitaxial growth is formed, which is convenient for Quality inspection and screening of growth materials, high yield.

Therefore, it is an important value of the present invention to integrate the GaAs-based PHEMT and the vertical cavity surface emitting laser (VCSEL) on the same substrate to form a monolithic integrated GaAs-based PHEMT and VCSEL material structure to realize the monolithic integration of devices.

Contents of the invention

The main purpose of the present invention is to provide a GaAs-based PHEMT vertical cavity surface emitting laser, so as to integrate the GaAs-based PHEMT and VCSEL on the same substrate to realize the monolithic integration of GaAs-based PHEMT and VCSEL.

The invention provides a GaAs-based PHEMT vertical cavity surface-emitting laser, the laser is composed of a GaAs-based PHEMT and a VCSEL, the GaAs-based PHEMT and the VCSEL are separated by an etching cut-off layer InGaP; the GaAs-based PHEMT consists of The first buffer layer GaAs, fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layer, channel lower barrier layer Al _0.22 Ga _0.78 As, channel layer In _0.2 Gao _0.8 As, space isolation layer Al _0.22 Ga _0.78 As, plane doped layer, barrier layer Al _0.22 Ga _0.78 As, N-type highly doped capping layer GaAs; the corrosion stop layer InGaP is formed on the N-type high doped cap layer GaAs grown by molecular beam epitaxy; the VCSEL consists of a second GaAs buffer layer sequentially grown by molecular beam epitaxy on the etch stop layer InGaP, _{Al 0.9 Ga 0.1} As/ Al _0.2 Ga _0.8 As N-type lower distributed Bragg reflector layer, Al _0.2 Ga _0.8 As/GaAs active layer, 3 pairs of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg reflector with λ ₀ /4 optical thickness mirror layer, Al _0.98 Ga _0.02 As oxidation confinement layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector mirror layer with an optical thickness of 21.5 to λ ₀ /4, and a GaAs cap layer.

In the above solution, the first buffer layer GaAs is used to provide a flat interface for subsequent epitaxial layer growth; the thickness of the first buffer layer GaAs is 500 nm.

In the above solution, the fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layers are used to reduce the leakage current of the buffer layer, wherein the thickness of Al _0.22 Ga _0.78 As is 10 nm, and the thickness of GaAs is 1.5 nm.

In the above scheme, the Al _0.22 Ga _0.78 As barrier layer under the channel is used to provide a smooth interface for the channel growth, and the Al _0.22 Ga _0.78 As/In _0..2 Ga _0.8 As heterojunction is also used to 2DEG is bound in the channel; the thickness of the Al _0.22 Ga _0.78 As barrier layer under the channel is 50nm.

In the above solution, the space isolation layer Al _0.22 Ga _0.78 As is used to space the donor impurity ionization center from the 2DEG, reduce the effect of ionization scattering, and ensure the high electron mobility of the 2DEG in the channel; the space isolation layer Al _0.22 Ga The thickness of _0.78 As is 4nm.

In the above solution, the planar doped layer is doped with Si, and the doping dose is 3.0×10 ¹² cm ⁻² .

In the above solution, the N-type highly doped capping layer GaAs is doped with Si, and the doped Si concentration is 5×10 ¹⁸ cm ^-3 , and the contact between N ⁺ -GaAs and the gate metal provides a good ohmic contact for device fabrication ; The thickness of the N-type highly doped GaAs capping layer is 50nm.

In the above solution, the etching stop layer InGaP is used to separate the epitaxial structure of the PHEMT and the VCSEL, and plays an etching stop function during the etching process; the thickness of the etching stop layer InGaP is 3 nm.

In the above solution, the thickness of the channel layer In _0.2 Ga _0.8 As is 12 nm, and the thickness of the barrier layer Al _0.22 Ga _0.78 As is 15 nm.

In the above solution, the N-type lower distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 34.5 to λ ₀ /4.

In the above solution, the N-type lower distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 34.5 to λ ₀ /4, and a thickness of 4460 nm.

In the above solution, the thickness of the active layer Al _0.2 Ga _0.8 As/GaAs is 250 nm.

In the above solution, the P-type distributed Bragg reflector layer is composed of 3 pairs of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of λ ₀ /4, with a thickness of 380 nm.

In the above solution, the oxidation limiting layer Al _0.98 Ga _0.02 As has a thickness of 40 nm.

In the above solution, the P-type upper distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 21.5 to λ ₀ /4, and a thickness of 2780 nm.

In the above solution, the GaAs cap layer has a thickness of 10 nm.

Beneficial result

It can be seen from the above technical scheme that the monolithic integrated GaAs-based PHEMT and VCSEL material structure provided by the present invention is based on the conventional GaAs-based PHEMT epitaxial structure, and the corrosion stop layer InGaP, GaAs buffer layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As N-type lower distributed Bragg reflector layer, Al _0.2 Ga _0.8 As/GaAs active layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg reflector layer, Al _0.98 Ga _0.02 As oxidation confinement layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg mirror layer, GaAs cap layer. Used to realize VCSEL. InGaP separates the PHEMT from the VCSEL and acts as an etch stop during the etch process.

In addition, the monolithic integrated GaAs-based PHEMT and VCSEL material structure provided by the present invention can realize more complex circuits, such as monolithic integrated pHEMT amplifier and VCSEL.

Description of drawings

Figure 1 is a schematic diagram of the monolithic integrated GaAs-based PHEMT and VCSEL material structure.

In the figure: 1. GaAs substrate, 2. First buffer layer GaAs, 3. Al _0.22 Ga _0.78 As/GaAs superlattice layer of fifteen periods, 4. Al _0.22 Ga _0.78 As barrier layer under the channel, 5. Channel layer In _0.2 Gao _0.8 As, 6. Space isolation layer Al _0.22 Ga _0.78 As, 7. Plane doped layer, 8. Barrier layer Al _0.22 Ga _0.78 As, 9. N-type highly doped capping layer GaAs , 10, etch stop layer InGaP, 11, second GaAs buffer layer, 12, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As N-type lower distributed Bragg mirror layer, 13, Al _0.2 Ga _0.8 As/GaAs active layer , 14. Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg mirror layer, 15. Al _0.98 Ga _0.02 As oxidation confinement layer, 16. Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg mirror layer, 17, GaAs cap layer.

Detailed ways

In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

The monolithic integrated GaAs-based PHEMT and VCSEL material structure provided by the present invention is based on the conventional GaAs-based PHEMT epitaxial structure, and the corrosion stop layer InGaP, GaAs buffer layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 are grown AsN type lower distributed Bragg reflector layer, Al _0.2 Ga _0.8 As/GaAs active layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P type distributed Bragg reflector layer, Al _0.98 Ga _0.02 As oxidation confinement layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector layer and GaAs cap layer are used to realize VCSEL. InGaP separates the PHEMT from the VCSEL and acts as an etch stop during the etch process.

The conventional GaAs-based PHEMT material structure consists of a buffer layer GaAs grown sequentially on a GaAs substrate, fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layers, a channel lower barrier layer Al _0.22 Ga _0.78 As, a channel layer In _0.2 Ga _0.8 As, space isolation layer Al _0.22 Ga _0.78 As, planar doped layer Si, barrier layer Al _0.22 Ga _0.78 As and N-type highly doped capping layer GaAs.

VCSEL material structure consists of GaAs buffer layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 AsN type lower distributed Bragg reflector layer, Al _0.2 Ga _0.8 As/GaAs active layer, Al _0.9 Ga _0.1 It consists of an As/Al _0.2 Ga _0.8 As P-type distributed Bragg reflector layer, an Al _0.98 Ga _0.02 As oxidation limiting layer, an Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector layer, and a GaAs cap layer.

As shown in Figure 1, Figure 1 is a schematic diagram of the monolithic integrated GaAs-based PHEMT and VCSEL material structure provided by the present invention, the structure is composed of GaAs-based pHEMT and VCSEL parts, the GaAs-based PHEMT and the VCSEL are etched cut-off layer InGaP separated.

The GaAs-based PHEMT consists of a buffer layer GaAs sequentially grown by molecular beam epitaxy on a GaAs substrate, fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layers, a channel lower barrier layer Al _0.22 Ga _0.78 As, Channel layer In _0.2 Ga _0.8 As, space isolation layer Al _0.22 Ga _0.78 As, planar doped layer, barrier layer Al _0.22 Ga _0.78 As, N-type highly doped capping layer GaAs.

The etching stop layer InGaP is grown by molecular beam epitaxy on the N-type highly doped capping layer GaAs.

The VCSEL consists of a GaAs buffer layer sequentially grown by molecular beam epitaxy on the etch stop layer InGaP, an Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As N-type lower distributed Bragg mirror layer, and an Al _0.2 Ga _0.8 As/GaAs active layer , Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type distributed Bragg reflector layer, Al _0.98 Ga _0.02 As oxidation confinement layer, Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector layer, GaAs Cap composition.

The GaAs buffer layer is used to provide a smooth interface for subsequent epitaxial layer growth; the thickness of the first GaAs buffer layer is 500 nm.

The fifteen periods of Al _0.22 Ga _0.78 As/GaAs superlattice layers are used to reduce the leakage current of the buffer layer, wherein the thickness of Al _0.22 Ga _0.78 As is 10 nm, and the thickness of GaAs is 1.5 nm.

The Al _0.22 Ga _0.78 As barrier layer under the channel is used to provide a smooth interface for channel growth, and at the same time, the Al _0.22 Ga _0.78 As/In _0.2 Ga _0.8 As heterojunction is used to confine the 2DEG in the channel; The thickness of the Al _0.22 Ga _0.78 As barrier layer under the channel is 50nm.

The space isolation layer Al _0.22 Ga _0.78 As is used to isolate the ionization center of the donor impurity from the 2DEG space, reduce the ionization scattering effect, and ensure the high electron mobility of the 2DEG in the channel; the thickness of the space isolation layer Al _0.22 Ga _0.78 As 4nm.

Si is doped in the planar doped layer, and the doping dose is 3.0×10 ¹² cm ⁻² .

The N-type highly doped capping layer GaAs is doped with Si, and the doped Si concentration is 5×10 ¹⁸ cm ^-3 , and the contact between N ⁺ -GaAs and the gate metal provides a good ohmic contact for device fabrication; the N-type highly doped The thickness of the mixed cap layer GaAs is 50nm.

The thickness of the channel layer In _0.2 Ga _0.8 As is 12 nm, and the thickness of the barrier layer Al _0.22 Ga _0.78 As is 15 nm.

The etching stop layer InGaP is used to separate the epitaxial structure of the PHEMT and the VCSEL, and plays an etching stop function during the etching process; the thickness of the etching stop layer InGaP is 3nm.

The N-type lower distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 34.5 to λ ₀ /4.

The N-type lower distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 34.5 to λ ₀ /4, with a thickness of 4460 nm.

The thickness of the active layer Al _0.2 Ga _0.8 As/GaAs is 250 nm.

The P-type distributed Bragg reflector layer is composed of 3 pairs of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of λ ₀ /4, with a thickness of 380 nm.

The oxidation limiting layer Al _0.98 Ga _0.02 As has a thickness of 40 nm.

The P-type upper distributed Bragg reflector layer is composed of Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As with an optical thickness of 21.5 to λ ₀ /4, with a thickness of 2780 nm.

The thickness of the GaAs cap layer is 10nm.

The growth process of the monolithic integrated GaAs-based PHEMT and VCSEL material structure provided by the present invention will be further described below.

Step 1, growing a 200nm first buffer layer GaAs on the GaAs substrate;

Step 2, growing fifteen periods of 10nm Al _0.22 Ga _0.78 As/1.5nm GaAs superlattice on the first buffer layer GaAs;

Step 3, growing a 50nm under-channel barrier layer Al _0.22 Ga _0.78 As on the Al _0.22 Ga _0.78 As/GaAs superlattice layer of fifteen periods;

Step 4, growing a 12nm channel layer In _0.2 Ga _0.8 As on the Al _0.22 Ga _0.78 As barrier layer under the channel;

Step 5, growing a 4nm space isolation layer Al _0.22 Ga _0.78 As on the channel layer In _0.2 Ga _0.8 As;

Step 6, growing a planar doped layer on the space isolation layer Al _0.22 Ga _0.78 As, and doping with Si at a dose of 3.0×10 ¹² cm ^-2 ;

Step 7, growing a 15nm barrier layer A1 _0.22 Ga _0.78 As on the planar doped layer;

Step 8, growing a 50nm N-type highly doped capping layer GaAs on the barrier layer Al _0.22 Ga _0.78 As;

Step 9, growing an In _0.5 Ga _0.5 P etch stop layer with a thickness of 3 nm on the N-type highly doped cap layer GaAs;

Step 10, growing a GaAs buffer layer 2 with a thickness of 300 nm on the In _0.5 Ga _0.5 P etch stop layer;

Step 11, growing an Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As N-type lower distributed Bragg reflector layer with a thickness of 4460 nm and an optical thickness of 34.5 to λ ₀ /4 on the second buffer layer;

Step 12, growing an Al _0.2 Ga _0.8 As/GaAs active layer with a thickness of 250 nm on the N-type lower distributed Bragg mirror layer;

Step 13, growing Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 AsP distributed Bragg reflector layers with a thickness of 380 nm and 3 pairs of λ ₀ /4 optical thicknesses on the active layer;

Step 14, growing an Al _0.98 Ga _0.02 As oxidation confinement layer with a thickness of 40 nm on the P-type DBR layer;

Step 15, growing an Al _0.9 Ga _0.1 As/Al _0.2 Ga _0.8 As P-type upper distributed Bragg reflector layer with a thickness of 2780 nm and an optical thickness of 21.5 to λ ₀ /4 on the oxidation limiting layer;

Step 16, growing a GaAs cap layer with a thickness of 10 nm on the P-type upper distributed Bragg reflector layer.

The monolithic integrated GaAs-based PHEMT and VCSEL material structure of the present invention takes into account the actual requirements of epitaxial growth and device performance, and the thickness and doping dose of each layer can be adjusted according to specific materials and device indicators within a certain range. On the premise that the epitaxial growth can be realized, the monolithic integration of GaAs-based PHEMT and VCSEL is realized.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. A kind of 1. GaAs base PHEMTs vertical cavity surface emitting laser, it is characterised in that：The laser by GaAs base PHEMTs and VCSEL two parts form, and the GaAs base PHEMTs and the VCSEL cutoff layer InGaP that is corroded are separated；The GaAs bases PHEMT is by the first buffer layer GaAs of molecular beam epitaxial growth, 15 cycles successively on gaas substrates Al_0.22Ga_0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al_0.22Ga_0.78As, channel layer In_0.2Gao_0.8As, space isolation Layer Al_0.22Ga_0.78As, planar sheet doping layers, barrier layer Al_0.22Ga_0.78The highly doped cap GaAs of As, N-type is formed；The corrosion Cutoff layer InGaP molecular beam epitaxial growths on the highly doped cap GaAs of the N-type form；The VCSEL in corrosion by cutting Only the 2nd GaAs cushions of molecular beam epitaxial growth, 34.5 couples of λ successively on layer InGaP₀The Al of/4 optical thicknesses_0.9Ga_0.1As/ Al_0.2Ga_0.8Distribution Bragg reflector layer, Al under AsN types_0.2Ga_0.8As/GaAs active layers, 3 couples of λ₀/ 4 optical thicknesses Al_0.9Ga_0.1As/Al_0.2Ga_0.8As p-type distribution Bragg reflectors layer, Al_0.98Ga_0.02As oxidation limiting layers, 21.5 couples of λ₀/4 The Al of optical thickness_0.9Ga_0.1As/Al_0.2Ga_0.8Distribution Bragg reflector layer, GaAs cap layers in As p-types.
2. A kind of 2. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：Described One cushion GaAs is used to provide smooth interface for the growth of subsequent epitaxial layer；The thickness of first buffer layer GaAs is 500nm。
3. A kind of 3. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：Described ten The Al in five cycles_0.22Ga_0.78As/GaAs superlattice layers are used to reduce cushion leakage current, wherein, Al_0.22Ga_0.78The thickness of As Spend for 10nm, the thickness of GaAs is 1.5nm.
4. A kind of 4. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The ditch Road lower barrierlayer Al_0.22Ga_0.78As is used to provide a smooth interface for raceway groove growth, while also utilizes Al_0.22Ga_0.78As/ In_0..2Ga_0.8As hetero-junctions is strapped in 2DEG in raceway groove；The raceway groove lower barrierlayer Al_0.22Ga_0.78The thickness of As is 50nm.
5. A kind of 5. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The sky Between separation layer Al_0.22Ga_0.78As is used to isolate donor impurity spur and 2DEG spaces, reduces ionization scattering process, ensures The high electron mobility of 2DEG in raceway groove；The space separation layer Al_0.22Ga_0.78The thickness of As is 4nm.
6. A kind of 6. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：It is described flat That adulterated in the doped layer of face is Si, dopant dose 3.0x10¹²cm^-2。
7. A kind of 7. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The N-type That adulterated in highly doped cap GaAs is Si, and doping Si concentration is 5 × 10¹⁸cm^-3, N⁺It is device that-GaAs is contacted with grid metal Prepare and good Ohmic contact is provided；The thickness of the highly doped cap GaAs of the N-type is 50nm.
8. A kind of 8. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The corruption The thickness for losing cutoff layer InGaP is 3nm.
9. A kind of 9. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The ditch Channel layer In_0.2Ga_0.8The thickness of As is 12nm, the barrier layer Al_0.22Ga_0.78The thickness of As is 15nm.
10. A kind of 10. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The N Distribution Bragg reflector layer is by 34.5 couples of λ under type₀The Al of/4 optical thicknesses_0.9Ga_0.1As/Al_0.2Ga_0.8As is formed；

    Distribution Bragg reflector layer is by 34.5 couples of λ under the N-type₀The Al of/4 optical thicknesses_0.9Ga_0.1As/Al_0.2Ga_0.8As structures Into thick 4460nm；

    The active layer Al_0.2Ga_0.8As/GaAs thickness 250nm；

    The p-type distribution Bragg reflector layer is by 3 couples of λ₀The Al of/4 optical thicknesses_0.9Ga_0.1As/Al_0.2Ga_0.8As is formed, thick 380nm；

    The oxidation limiting layer Al_0.98Ga_0.02As thickness 40nm；

    Distribution Bragg reflector layer is by 21.5 couples of λ in the p-type₀The Al of/4 optical thicknesses_0.9Ga_0.1As/Al_0.2Ga_0.8As structures Into thick 2780nm；

    The cap layers GaAs thickness 10nm.