CN104752467A - Organic light emitting display device and preparation method thereof - Google Patents
Organic light emitting display device and preparation method thereof Download PDFInfo
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- CN104752467A CN104752467A CN201310744920.XA CN201310744920A CN104752467A CN 104752467 A CN104752467 A CN 104752467A CN 201310744920 A CN201310744920 A CN 201310744920A CN 104752467 A CN104752467 A CN 104752467A
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Abstract
The invention discloses an organic light emitting display device and a preparation method thereof. The organic light emitting display device comprises a light blocking layer located at the same layer with a grid layer and/or a semiconductor layer and made of the same material, the light blocking layer is arranged in the direction parallel to the substrate, and the light blocking layer is arranged between an organic light emitting diode and a thin film transistor; the light blocking layer is capable of effectively preventing the self-luminous light of the organic light emitting diode in the organic light emitting display device emitting to the semiconductor layer, and accordingly the influence of the self-luminous light to the performance of the thin film transistor and the problems of performance degradation and life span reduction of the organic light emitting display device due to the semi-luminous light are avoided, the performance of the thin film transistor is effectively improved, and the use effect and life span of the organic light emitting display device are improved. The preparation method for the organic light emitting display device is capable of optimizing the performance of the thin film transistor without increasing technique steps, the technique is simple, the preparation cost is low, and the application value is high.
Description
Technical field
The present invention relates to display field, be specifically related to a kind of organic light-emitting display device and preparation method thereof.
Background technology
Active matrix organic light-emitting device (English full name Active Matrix Organic Lighting Emitting Display, be called for short AMOLED), utilize thin-film transistor (English full name Thin Film Transistor, be called for short TFT), collocation capacitance stores signal, control brightness and the GTG performance of Organic Light Emitting Diode (English full name Organic Lighting Emitting Diode is called for short OLED).Each independent AMOLED has the second complete electrode, organic function layer and the first electrode, and the first electrode covers a thin film transistor (TFT) array, forms a matrix.Thin film transistor (TFT) array forms circuit, determines the luminous situation of pixel, and then determines the formation of image.AMOLED can be in large size, comparatively power saving, high-res, and the panel life-span is longer, therefore obtains the attention of height in Display Technique field.
As shown in Figure 1, in prior art, organic light-emitting display device comprises substrate 00, be arranged on the thin-film transistor on substrate 00, described thin-film transistor generally includes grid 10, first insulating barrier 20 be arranged on substrate 00, semiconductor layer 30, second insulating barrier 40, and is arranged on drain electrode 501 and the source electrode 502 at semiconductor layer 30 two ends.Thin-film transistor is also provided with passivation layer 36, described planarization layer 60 is arranged the Organic Light Emitting Diode comprising the first electrode layer 70, organic layer 90 and the second electrode lay 100, wherein, the through hole of source electrode 502 described in conducting and described first electrode layer 70 is provided with in described planarization layer 60.Described planarization layer 60 is also provided with pixel confining layers 80, for the isolation between each pixel.
Illumination can make semiconductor layer 30 produce photo-generated carrier, then tft characteristics is affected, such as resistivity, threshold voltage, leakage current etc., can be stopped described display unit extraneous light by packaging technology in the preparation process of described organic light-emitting display device, such as, ultraviolet-proof, black matrix etc. are set.But, from the light of display unit its own transmission, such as from the light that the first electrode layer 70 transmits, particularly the light of blue light and so on short wavelength can produce semiconductor layer 30 and have a strong impact on, thus affect thin-film transistor performance, cause the problem of the performance degradation of described organic light-emitting display device, life-span minimizing.
Summary of the invention
For this reason, to be solved by this invention is the problem that in prior art, organic light-emitting display device self luminescence affects thin-film transistor performance, provides a kind of and effectively avoids organic light-emitting display device of the incident TFT semiconductors layer of organic light-emitting display device self-luminous and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of organic light-emitting display device of the present invention, comprising:
Substrate;
Thin-film transistor, comprises semiconductor layer, is arranged on drain electrode and the source electrode at semiconductor layer two ends, be vertically arranged at the grid layer of semiconductor layer or below;
Planarization layer, arranges on thin-film transistor;
Organic Light Emitting Diode, is arranged on planarization layer, comprises the first electrode layer, organic layer and the second electrode lay;
The first through hole of conducting first electrode layer and source electrode or drain electrode is provided with in planarization layer;
Described organic light-emitting display device also comprises the photoresist layer formed with same material with layer with described grid layer and/or described semiconductor layer, along being parallel to described orientation substrate, described photoresist layer is arranged between described Organic Light Emitting Diode and described thin-film transistor.
The projection on the substrate of the light-emitting zone of described Organic Light Emitting Diode and described photoresist layer projection zero lap on the substrate.
Described grid layer is arranged on below described semiconductor layer.
Described thin-film transistor also comprises the first insulating barrier be set directly on described grid layer.
Described thin-film transistor also comprises the second insulating barrier be set directly on described semiconductor layer.
Described first insulating barrier or described second insulating barrier cover described photoresist layer.
Described organic layer comprises luminescent layer.
The preparation method of organic light-emitting display device of the present invention, comprises the steps:
S1, on substrate, form the first metal layer, and the non-open areas being patterned in substrate forms photoresist layer and grid layer;
S2, on substrate, directly form the first insulating barrier covering photoresist layer and grid layer;
S3, on the first insulating barrier, directly form semiconductor layer material layer, and patterning, above grid layer, form semiconductor layer;
S4, on the first insulating barrier, form the second metal level, and patterning forms the source electrode and drain electrode that cover semiconductor layer two ends;
S5, on the first insulating barrier, form planarization layer, and patterning, formed and expose source electrode or subregional first through hole of drain portion;
S6, on planarization layer, directly form the first electrode layer, and be connected with drain contact by the first through hole;
S7, on planarization layer, form the pixel confining layers of covering first electrode layer, and patterning, the second through hole of exposure first electrode layer is formed in the open area of substrate;
S8, the first electrode layer in the second through hole form organic layer and the second electrode lay.
The preparation method of organic light-emitting display device of the present invention, comprises the steps:
S1, on substrate, form the first metal layer, and patterning forms grid layer;
S2, on substrate, directly form the first insulating barrier of cover gate layer;
S3, on the first insulating barrier, directly form semiconductor layer material layer, and patterning, form photoresist layer and semiconductor layer in the non-open areas of substrate, semiconductor layer is formed in above grid layer;
S4, on the first insulating barrier, form the second insulating barrier covering photoresist layer and semiconductor layer, and patterning forms the third through-hole at exposed semiconductor layer two ends, form the second metal level over the second dielectric, and patterning is formed independently and the source electrode be connected with semiconductor layer two end in contact by third through-hole and drain electrode;
S5, form planarization layer over the second dielectric, and patterning, formed and expose source electrode or subregional first through hole of drain portion;
S6, on planarization layer, directly form the first electrode layer, and be connected with source electrode or drain contact by the first through hole;
S7, on planarization layer, form the pixel confining layers of covering first electrode layer, and patterning, the second through hole of exposure first electrode layer is formed in the open area of substrate;
S8, the first electrode layer in the second through hole form organic layer and the second electrode lay.
On the sidewall that organic layer described in step S8 and described the second electrode lay extend to described second through hole by described second through hole and described planarization layer.
The non-open areas being also included in substrate during the patterning of the first metal layer described in step S1 forms the step of the second photoresist layer, described second photoresist layer and the photoresist layer described in step S3 projection section on the substrate or all overlap.
Step S4 is also included in the second insulating barrier described first insulating barrier being formed and covers described semiconductor layer, and patterning, form the step of the third through-hole exposing described semiconductor layer two ends.
Technique scheme of the present invention has the following advantages compared to existing technology:
A kind of organic light-emitting display device of the present invention, comprise the photoresist layer formed with same material with layer with described grid layer and/or described semiconductor layer, along being parallel to described orientation substrate, described photoresist layer is arranged between described Organic Light Emitting Diode and described thin-film transistor; Described photoresist layer can effectively avoid the self-luminous of Organic Light Emitting Diode in organic light-emitting display device to be incident to described semiconductor layer, thus affect thin-film transistor performance, cause the problem of the performance degradation of described organic light-emitting display device, life-span minimizing, effectively improve the performance of described thin-film transistor, thus improve result of use and the life-span of organic light-emitting display device.
The preparation method of a kind of organic light-emitting display device of the present invention, described photoresist layer and described grid layer and/or described semiconductor layer are formed with same material with layer, the optimization of thin-film transistor performance can be realized when not increasing processing step, technique is simple, preparation cost is low, has great using value.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the cutaway view of organic light-emitting display device in prior art;
Fig. 2-1 ~ Fig. 2-9 is the cutaway views in preparation process of organic light-emitting display device described in the embodiment of the present invention 1;
Fig. 3-1 ~ Fig. 3-9 is the cutaway views in preparation process of organic light-emitting display device described in the embodiment of the present invention 2;
In figure, Reference numeral is expressed as: 00-substrate, and 10,101-grid layer, 20-first insulating barrier, 30,301-semiconductor layer, 102,302-photoresist layer, 40-second insulating barrier, 501-source electrode, 502-drains, 60-planarization layer, 70-first electrode layer, 80-pixel confining layers, 90-organic layer, 100-the second electrode lay.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element; Described " open area " is the region in Organic Light Emitting Diode bright dipping region corresponding on described substrate, and described " non-open areas " is the region on described substrate except the bright dipping region of corresponding Organic Light Emitting Diode.
Embodiment 1
The present embodiment provides a kind of organic light-emitting display device, as shown in figs. 2-9, comprises substrate 00, is arranged on the Organic Light Emitting Diode of described substrate 00 open area, is arranged on the thin-film transistor of described substrate 00 non-open areas.
Described thin-film transistor comprises semiconductor layer 30, is arranged on the drain electrode 501 at semiconductor layer two ends and source electrode 502, is vertically arranged at the grid layer 101 of semiconductor layer or below; In the present embodiment, described thin-film transistor is bottom grating structure, and namely described grid layer 101 is arranged on below described semiconductor layer 30.
In the present embodiment, described organic light-emitting display device also comprises the planarization layer 60 arranged on thin-film transistor.
Described Organic Light Emitting Diode is arranged on planarization layer 60, comprises the first electrode layer 70, organic layer 90 and the second electrode lay 100.
Be provided with conducting first electrode layer 70 and source electrode 502 in described planarization layer 60 or drain 501 the first through hole.
Described organic light-emitting display device also comprises the photoresist layer 102 formed with same material with layer with described grid layer 101, along being parallel to described substrate 00 direction, described photoresist layer 102 is arranged between described Organic Light Emitting Diode and described thin-film transistor, and the projection of the light-emitting zone of described Organic Light Emitting Diode on described substrate 00 and the projection zero lap region of described photoresist layer 102 on described substrate 00.
Described photoresist layer 102 can effectively avoid the self-luminous of Organic Light Emitting Diode in organic light-emitting display device to be incident to described semiconductor layer 30, thus affect thin-film transistor performance, cause the problem of the performance degradation of described organic light-emitting display device, life-span minimizing, effectively improve the performance of described thin-film transistor, thus improve result of use and the life-span of organic light-emitting display device.
Described thin-film transistor also comprises the first insulating barrier 20 be set directly on described grid layer 101, and described first insulating barrier 20 covers described photoresist layer 102.Described thin-film transistor also comprises the second insulating barrier 40 be set directly on described semiconductor layer 30.
As other embodiments of the present invention, described semiconductor layer 30 can not also be arranged described second insulating barrier 40.
Described substrate 00 is glass substrate, and as alterable embodiment of the present invention, described substrate 100 can also be polymeric substrates or metal substrate.
Described semiconductor layer 30 is selected from but is not limited to amorphous silicon layer, polysilicon layer, metal oxide semiconductor layer, the present embodiment is preferably metal oxide semiconductor layer, described metal-oxide semiconductor (MOS) is selected from but is not limited to IGZO(indium gallium zinc oxide), IZO(indium zinc oxide), ZTO(zinc oxide tin adduct), Al-IZO(aluminium doped indium oxide zinc), N-IZO(N doping indium zinc oxide) in one, the preferred IGZO of the present embodiment.The thickness of described semiconductor layer 30 is 20nm-100nm, the preferred 50nm of the present embodiment.
Described first insulating barrier 20 is selected from respectively with described second insulating barrier 40 but is not limited to one or more stacked structures formed in SiNx, SiOx, SiON, AlOx, described in the present embodiment, the first insulating barrier 20 is preferably SiO2, and described second insulating barrier 40 is preferably SiO2.The thickness of described first insulating barrier 20 is 200nm-400nm, the preferred 300nm of the present embodiment; The thickness of described second insulating barrier 40 is 200nm-600nm, the preferred 450nm of the present embodiment.
Described grid layer 101 is selected from but is not limited to one or more layers the stacked structure in the low-resistance material layers such as aluminium lamination, molybdenum layer, silver layer, layers of copper, aluminium alloy layer, is preferably molybdenum layer in the present embodiment.The thickness of described grid layer 101 is 200nm-400nm, the preferred 250nm of the present embodiment.
Described planarization layer 60 is selected from but is not limited to the insulative polymer material such as polymethyl methacrylate, polyimides layer, and the present embodiment is preferably polyimide layer; The thickness of described planarization layer 60 is 1000nm ~ 3000nm, and the present embodiment is preferably 2000nm.
Described first electrode layer 70 is selected from but is not limited to ITO(indium tin oxide), IZO(indium-zinc oxide), one or more stacked structures formed in the low-resistance material layer such as Al, Mg, Ag, the present embodiment is preferably ITO layer; The thickness of described first electrode layer 70 is 20nm ~ 60nm, and the present embodiment is preferably 40nm.
Described pixel confining layers 80 is selected from but is not limited to the insulative polymer material layers such as polyimides, and the present embodiment is preferably polyimide layer; The thickness of described pixel confining layers 80 is 1000nm-3000nm, and the present embodiment is preferably 2000nm.
Described organic layer 90 comprises organic luminous layer, and electron injecting layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, one or more combination in hole injection layer.
Described in each described Organic Light Emitting Diode, luminescent layer material therefor is not quite similar; In order to satisfied display requirement, all described Organic Light Emitting Diodes are divided into some pixel cells, at least comprise two in ruddiness, green glow, blue light diode in each pixel cell, glow color is determined by luminescent layer, luminescent layer material therefor and the same prior art of thickness.
In the present embodiment, described red light luminescent layer is 4-(dicyano methylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyrans (DCM), green light emitting layer is 3-(2'-benzothiazolyl)-7-diethyl amino coumarin (coumarin 6), blue light-emitting is 9,10-bis-(betanaphthyl) anthracene, other embodiments of the invention are not limited thereto.
Described the second electrode lay 100 is selected from but is not limited to one or more stacked structures formed in the low-resistance materials such as ITO, IZO, Al, Mg, Ag, and the present embodiment is preferably Al layer; The thickness of described the second electrode lay 100 is 100nm-200nm, and the present embodiment is preferably 150nm.
Described source electrode 502 and described drain electrode 501 are selected from but are not limited to one or more layers the stacked structure in the low-resistance material layers such as aluminium lamination, molybdenum layer, silver layer, layers of copper, titanium layer, aluminium alloy layer, and the present embodiment is preferably aluminium lamination; The thickness of described source electrode 502 and described drain electrode 501 is 300nm-800nm, and the present embodiment is preferably 500nm.
The preparation method of described organic light-emitting display device, comprises the steps:
S1, as shown in Fig. 2-1, on substrate 00, form the first metal layer by physical gas-phase deposition, and by photoetching and etching technics patterning, form photoresist layer 102 and grid layer 101 in the non-open areas of substrate 00.
As other embodiments of the present invention, the preparation method of described photoresist layer 102 and described grid layer 101 is not limited thereto, and can also select suitable preparation method according to the character of material therefor.
S2, as shown in Fig. 2-2, on substrate 00, directly formed the first insulating barrier 20 covering described photoresist layer 102 and described grid layer 101 by chemical vapor deposition method.
As other embodiments of the present invention, described first insulating barrier 20 by the preparation of the technique such as physical vapour deposition (PVD) or ald, all can also can realize object of the present invention, belong to protection scope of the present invention.
S3, as Figure 2-3, directly forms semiconductor layer material layer by physical gas-phase deposition, and by photoetching and etching technics patterning, above described grid layer 101, forms semiconductor layer 30 on described first insulating barrier 20.
As other embodiments of the present invention, the preparation method of described semiconductor layer 30 is not limited thereto, and can also select suitable preparation method according to the character of material therefor.
S4, as in Figure 2-4, forms the second insulating barrier 40 covering described semiconductor layer 30 on described first insulating barrier 20 by chemical vapor deposition method, and by photoetching and etching technics patterning, forms the third through-hole exposing described semiconductor layer 30 two ends.
As other embodiments of the present invention, described first insulating barrier 40 by the preparation of the technique such as physical vapour deposition (PVD) or ald, all can also can realize object of the present invention, belong to protection scope of the present invention.
On the first insulating barrier 20, form the second metal level by physical gas-phase deposition, and patterning forms the source electrode 502 and drain electrode 501 that cover semiconductor layer 30 two ends.
As other embodiments of the present invention, described source electrode 502 and described drain electrode 501 can be exchanged.
S5, as shown in Figure 2-5, on the first insulating barrier 20, formed the planarization layer 60 of each layer in smooth step S1-S4 by coating process, and by lithographic patterning, form the first through hole exposing source electrode 502 subregion.
S6, as shown in figures 2-6, directly forms the first electrode layer 70 by physical gas-phase deposition on planarization layer 60, and is connected with drain contact by the first through hole.
S7, as illustrated in figs. 2-7, on planarization layer 60, formed the pixel confining layers 80 of covering first electrode layer by coating process, and by lithographic patterning, form the second through hole of exposure first electrode layer 70 in the open area of substrate 00.
S8, as illustrated in figs. 2 through 8, by first electrode layer 70 of evaporation process in the second through hole forms organic layer 90; As shown in figs. 2-9, on described organic layer 90, the second electrode lay 100 is formed by evaporation process.
In the present embodiment, on the sidewall that described organic layer 90 and described the second electrode lay 100 extend to described second through hole by described second through hole and described planarization layer 80.
The preparation method of described a kind of organic light-emitting display device, described photoresist layer 102 is formed with same material with layer with described grid layer 101, the optimization of thin-film transistor performance can be realized when not increasing processing step, technique is simple, preparation cost is low, has great using value.
Embodiment 2
The present embodiment provides a kind of organic light-emitting display device, and as shown in figs. 3-9, concrete structure and execution mode are with embodiment 1; Uniquely unlike, as shown in figure 3-1, in the process of the patterning of the first metal layer described in step S1, only form grid layer 10, as shown in figure 3-2, photoresist layer 301 described in step S3 and described semiconductor layer 301 are formed with same material with layer, and described second insulating barrier 40 covers described photoresist layer 301.Device cutaway view in concrete preparation flow is as shown in Fig. 3-1-Fig. 3-9.
Embodiment 3
The present embodiment provides a kind of organic light-emitting display device, and concrete structure and execution mode are with embodiment 1; Uniquely unlike, the non-open areas being also included in substrate 00 during the patterning of the first metal layer described in step S1 forms the step of the second photoresist layer, projection section on described substrate 00 of described second photoresist layer and the photoresist layer described in step S3 or all overlap.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (12)
1. an organic light-emitting display device, comprising:
Substrate;
Thin-film transistor, comprises semiconductor layer, is arranged on drain electrode and the source electrode at semiconductor layer two ends, be vertically arranged at the grid layer of semiconductor layer or below;
Planarization layer, arranges on thin-film transistor;
Organic Light Emitting Diode, is arranged on planarization layer, comprises the first electrode layer, organic layer and the second electrode lay;
The first through hole of conducting first electrode layer and source electrode or drain electrode is provided with in planarization layer;
It is characterized in that, described organic light-emitting display device also comprises the photoresist layer formed with same material with layer with described grid layer and/or described semiconductor layer, along being parallel to described orientation substrate, described photoresist layer is arranged between described Organic Light Emitting Diode and described thin-film transistor.
2. organic light-emitting display device according to claim 1, is characterized in that, the projection on the substrate of the light-emitting zone of described Organic Light Emitting Diode and described photoresist layer projection zero lap on the substrate.
3. organic light-emitting display device according to claim 1 and 2, is characterized in that, described grid layer is arranged on below described semiconductor layer.
4. organic light-emitting display device according to claim 3, is characterized in that, described thin-film transistor also comprises the first insulating barrier be set directly on described grid layer.
5. organic light-emitting display device according to claim 3, is characterized in that, described thin-film transistor also comprises the second insulating barrier be set directly on described semiconductor layer.
6. the organic light-emitting display device according to claim 4 or 5, is characterized in that, described first insulating barrier or described second insulating barrier cover described photoresist layer.
7. organic light-emitting display device according to claim 1, is characterized in that, described organic layer comprises luminescent layer.
8., according to the preparation method of the arbitrary described organic light-emitting display device of claim 1-7, it is characterized in that, comprise the steps:
S1, on substrate, form the first metal layer, and the non-open areas being patterned in substrate forms photoresist layer and grid layer;
S2, on substrate, directly form the first insulating barrier covering photoresist layer and grid layer;
S3, on the first insulating barrier, directly form semiconductor layer material layer, and patterning, above grid layer, form semiconductor layer;
S4, on the first insulating barrier, form the second metal level, and patterning forms the source electrode and drain electrode that cover semiconductor layer two ends;
S5, on the first insulating barrier, form planarization layer, and patterning, formed and expose source electrode or subregional first through hole of drain portion;
S6, on planarization layer, directly form the first electrode layer, and be connected with drain contact by the first through hole;
S7, on planarization layer, form the pixel confining layers of covering first electrode layer, and patterning, the second through hole of exposure first electrode layer is formed in the open area of substrate;
S8, the first electrode layer in the second through hole form organic layer and the second electrode lay.
9., according to the preparation method of the arbitrary described organic light-emitting display device of claim 1-7, it is characterized in that, comprise the steps:
S1, on substrate, form the first metal layer, and patterning forms grid layer;
S2, on substrate, directly form the first insulating barrier of cover gate layer;
S3, on the first insulating barrier, directly form semiconductor layer material layer, and patterning, form photoresist layer and semiconductor layer in the non-open areas of substrate, semiconductor layer is formed in above grid layer;
S4, on the first insulating barrier, form the second insulating barrier covering photoresist layer and semiconductor layer, and patterning forms the third through-hole at exposed semiconductor layer two ends, form the second metal level over the second dielectric, and patterning is formed independently and the source electrode be connected with semiconductor layer two end in contact by third through-hole and drain electrode;
S5, form planarization layer over the second dielectric, and patterning, formed and expose source electrode or subregional first through hole of drain portion;
S6, on planarization layer, directly form the first electrode layer, and be connected with source electrode or drain contact by the first through hole;
S7, on planarization layer, form the pixel confining layers of covering first electrode layer, and patterning, the second through hole of exposure first electrode layer is formed in the open area of substrate;
S8, the first electrode layer in the second through hole form organic layer and the second electrode lay.
10. the preparation method of organic light-emitting display device according to claim 8 or claim 9, is characterized in that, on the sidewall that organic layer described in step S8 and described the second electrode lay extend to described second through hole by described second through hole and described planarization layer.
The preparation method of 11. organic light-emitting display devices according to claim 9, it is characterized in that, the non-open areas being also included in substrate during the patterning of the first metal layer described in step S1 forms the step of the second photoresist layer, described second photoresist layer and the photoresist layer described in step S3 projection section on the substrate or all overlap.
The preparation method of 12. organic light-emitting display devices according to claim 9, it is characterized in that, step S4 is also included in the second insulating barrier described first insulating barrier being formed and covers described semiconductor layer, and patterning, form the step of the third through-hole exposing described semiconductor layer two ends.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018032753A1 (en) * | 2016-08-15 | 2018-02-22 | 京东方科技集团股份有限公司 | Manufacturing method for display substrate, manufacturing method for display device, and display substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020038998A1 (en) * | 2000-09-29 | 2002-04-04 | Yoshimasa Fujita | Luminescent display device of active matrix drive type and fabrication method therefor |
| CN1943039A (en) * | 2005-02-28 | 2007-04-04 | 卡西欧计算机株式会社 | Thin film transistor panel |
| CN102195000A (en) * | 2010-03-02 | 2011-09-21 | 三星移动显示器株式会社 | Organic light emitting display apparatus |
-
2013
- 2013-12-30 CN CN201310744920.XA patent/CN104752467A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020038998A1 (en) * | 2000-09-29 | 2002-04-04 | Yoshimasa Fujita | Luminescent display device of active matrix drive type and fabrication method therefor |
| CN1943039A (en) * | 2005-02-28 | 2007-04-04 | 卡西欧计算机株式会社 | Thin film transistor panel |
| CN102195000A (en) * | 2010-03-02 | 2011-09-21 | 三星移动显示器株式会社 | Organic light emitting display apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018032753A1 (en) * | 2016-08-15 | 2018-02-22 | 京东方科技集团股份有限公司 | Manufacturing method for display substrate, manufacturing method for display device, and display substrate |
| US10580806B2 (en) | 2016-08-15 | 2020-03-03 | Boe Technology Group Co., Ltd. | Method of manufacturing a display substrate, method of manufacturing a display device and display substrate |
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